JPH09289272A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the size of a cooling means for cooling a semiconductor element by making the cooling means in such a structure that a closed loop space wherein water is sealed may be formed in each copper block and heat generated by a silicon pellet may be absorbed by the copper blocks. SOLUTION: Cooling means 30 and a semiconductor device are located alternately. The semiconductor device has copper blocks 31 which, being supplied with power, serve as electrodes and a silicon pellet 32 which switches power and generates heat. Between the copper blocks 31 and the silicon pellet 32, molybdenum plates 33 are located to prevent heat generated by the silicon pellet 32 from being directly transmitted to the copper blocks 31. Furthermore, a closed loop space 34 is formed in each copper block 31. Water is sealed in the spaces 34. The copper blocks 31, the silicon pellet 32, and the molybdenum plates 33 are housed within ceramic guides 36. By this method, the size of a cooling device for the semiconductor device can be reduced and an installation space can also be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module using a semiconductor element having a cooling means.

[0002]

2. Description of the Related Art In recent years, GTO thyristors (Gate Turn-Of)
f Thyristor), IGBT (Insulated Gate Bipolar T)
Semiconductor devices such as ransistors and LTTs (Light Trigger Thyristors) have greatly contributed to the spread and high performance of power and industrial converters. In particular, self-extinguishing devices such as GTO thyristors and IGBTs can be switched from an on-state to an off-state by a gate signal of relatively low power. It is expanding into transportation and industrial fields. However, since a large amount of heat is generated in these semiconductor elements, it is necessary to make a semiconductor module in which a cooling device is provided outside the semiconductor elements.

FIG. 26 shows a conventional semiconductor module in which cooling devices 1 and semiconductor elements 2 are alternately stacked and tightened from the outside with an appropriate pressure. FIG. 27 is a semiconductor element 2 that constitutes a semiconductor module, and FIG. 28 is a sectional view of the semiconductor module.

The silicon pellets 3 that are heated when the power is switched and the silicon pellets 3 are heated.
Molybdenum plate 4 disposed on the copper block 5, a copper block 5 disposed on the molybdenum plate 4 and serving as an electrode, a cooling device 1 disposed on the copper block 5, a silicon pellet 3 and a molybdenum plate 4. And a ceramic guide 6 that houses the copper block 5. Silicon pellet 3
The heat generated in 1 moves through the molybdenum plate 4 and further through the copper block 5 to the cooling device 1, where it is cooled so that the silicon pellet 3 does not exceed the allowable temperature.

[0005]

However, in the above-mentioned conventional semiconductor module, the cooling device for cooling the semiconductor element becomes large, and as a result, the semiconductor module cannot be downsized, which causes a problem in space.

Therefore, the present invention has been made in view of the above problems,
An object of the present invention is to provide a semiconductor module in which the cooling means for cooling the semiconductor element is downsized by using the semiconductor element provided with the cooling means.

[0007]

In order to achieve the above object, the invention according to claim 1 provides a pair of electrode means to which electric power is supplied, a switching means for switching the electric power, an electrode means and a switching means. A heat buffering means located between the means for preventing heat generated by the switching means from being directly transferred to the electrode means; a first cooling means at least a part of which is provided inside the electrode means; It is characterized in that it has a second cooling means provided outside to cool the electrode means, and a housing means for housing the electrode means, the switching means and the thermal buffer means.

According to a second aspect of the present invention, the first cooling means is a flow path through which a working fluid that boils and condenses with the heat generated by the switching means circulates.

In a third aspect of the present invention, the first cooling means is a flow path in which a working fluid that boils and condenses due to the heat generated by the switching means circulates, and a part of which is provided with an inclined portion. It is characterized by being.

According to a fourth aspect of the present invention, the first cooling means has a part of the flow path through which the working fluid that boils and condenses due to the heat generated by the switching means circulates outside the electrode means. It is characterized by

The invention according to claim 5 is characterized in that the first cooling means is a plurality of flow paths through which a working fluid that boils and condenses with the heat generated by the switching means circulates.

The invention according to claim 6 is characterized in that a heat pipe having a wick is used as a flow path through which the working fluid circulates.

According to a seventh aspect of the invention, a pair of electrode means to which electric power is supplied, a switching means for switching electric power, and a pair of electrode means are provided between the electrode means and the switching means.
Thermal buffering means for preventing heat generated in the switching means from being directly transmitted to the electrode means, flow path means through which the refrigerant flows through the electrode means, heat exchange means for exchanging heat of the refrigerant,
It is characterized by having a pressurizing means for applying pressure to the refrigerant and sending it out, and an accommodating means for accommodating the electrode means, the switching means and the heat buffering means.

The invention according to claim 8 is characterized in that it has a cooling means provided outside the electrode means for cooling the electrode means.

The invention according to claim 9 is characterized in that the flow path means is a flow path means intersecting in the electrode means.

According to a tenth aspect of the present invention, the flow path means is a means that penetrates the electrode means, the switching means and the thermal buffer means.

The invention described in claim 11 is characterized in that the pressurizing means is a control means for automatically controlling the circulation of the refrigerant.

[0018]

FIG. 1 shows a first embodiment of the present invention.
~ It demonstrates using FIG.

As shown in FIG. 3, a semiconductor module is one in which cooling devices 30 and semiconductor elements 25 are alternately arranged. FIG. 1 is a sectional view of the semiconductor module shown in FIG. The semiconductor element 25 includes a copper block 31 that is supplied with electric power and plays a role of an electrode, a silicon pellet 32 that generates heat while switching the electric power when the electric power is supplied, and a copper block 31 and a silicon pellet 32. A molybdenum plate 33 that is disposed between the molybdenum plate 33 and the heat generated in the silicon pellets 32 so as not to be directly transmitted to the copper block 31, and a closed loop type space portion 34 provided inside the copper block 31 without losing the function as an electrode. And this closed-loop type space part
Ceramic guide for accommodating water 35 enclosed in 34, copper block 31, silicon pellet 32, and molybdenum plate 33
Composed of 36 and.

The copper block 31 and the molybdenum plate 33 are
As shown in FIG. 1, they are arranged on both sides of the silicon pellet 31.

FIG. 2 shows a closed-loop type space portion 34 in which water 35 is enclosed. The mode of heat transfer will be described below together with FIG. The closed loop type space portion 34 in FIG. 2 is the right side portion in FIG.

The heat generated in the silicon pellet 32 is transmitted to the space heat absorbing side 34a of the closed loop type space provided inside the copper block 31 through the molybdenum plate 33. At this time, the condensed liquid 35a, which is water, absorbs this heat at the space endothermic side 34a and causes a boiling phenomenon. Boiling gas that boiled and changed phase
35b moves upward due to the pressure difference, and further moves to the space heat absorption side 34a. Boiling gas 35b is the space heat radiation side 34b
Dissipates heat and causes a condensation phenomenon. The condensed liquid 35a that has condensed and changed its phase moves downward by the action of gravity, and repeats the above-described cycle. The heat radiated on the space heat radiation side 34b is finally cooled by the cooling device 30.

As described above, by providing the closed-loop type space portion 34 in which water is sealed in the copper block 31, the heat generated in the silicon pellet 32 in the copper block 31 can be absorbed, so that the cooling device is provided. It is possible to make the semiconductor module 30 smaller.

Next, an example of the manufacturing process of the copper block 31 in this embodiment is shown in FIG. FIG. 4 (a) shows a block 40 for creating a space portion having a horizontal end surface and a hollow cylindrical block 41 in which a part of the inner surface is also a horizontal plane. The block 40 for creating the space portion and the hollow cylindrical block 41 are shown in FIG.
As shown in (b) and FIG. 4 (c), the end face of the hollow cylindrical block 41 is supported by the inner support block 42, and the end face block 43
Fix with. As a result, the copper block 31 in which the flow path of water is secured can be manufactured.

Next, a second embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the closed loop type space portion 34 of the first embodiment is provided with a space portion inclined side 34c. On this space part inclined side 34c, the upper side part which constitutes the space part 44 is
The shape is such that it gradually rises toward the outside cooler 30, and the lower side portion that constitutes the space portion 44 gradually descends.

The mode of heat transfer is the same as in the first embodiment. However, since the space sloped side 34c is provided,
The circulation of 35 is improved, the heat is transferred smoothly, and the cooling efficiency is improved. The closed-loop type space portion 44 having the space portion inclined side 34c is not limited to the parallelogram shape as shown in FIGS. Good. The manufacturing method of the copper block 31 is the first
It is similar to the embodiment.

A third embodiment of the present invention will be described with reference to FIG.

In this embodiment, the closed loop type space portion 34 of the first embodiment is downsized to form a closed loop type micro space portion 45, and a plurality of them are installed. The mode of heat transfer is the same as that of the first embodiment, but as a result of the plurality of closed-loop type micro space parts 45, the semiconductor element 25 can be cooled in detail. The manufacturing method of the copper block 31 is similar to that of the first embodiment.

A fourth embodiment of the present invention will be described with reference to FIG.

In the present embodiment, the closed loop type space portion 44 of the second embodiment is replaced by a miniaturized closed loop type micro space portion 46, and a plurality of them are installed. The form of heat transfer and the improvement of the circulation of the water 35 are the same as those in the second embodiment. However, as in the third embodiment, the closed loop type micro space portion 46 is installed so that the semiconductor device 25 can be detailed. It became possible to cool over. The manufacturing method of the copper block 31 is similar to that of the first embodiment.

A fifth embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the closed loop type micro space portion 46 in the fourth embodiment is replaced with a linear type micro space portion 47. FIG. 10 shows a linear micro space 47 in which water 35 is enclosed. The heat transfer mode of the semiconductor module in which the linear micro space is installed will be described below. Condensed liquid 35, which is a working fluid enclosed in a linear microspace 47
a is a molybdenum plate generated in the silicon pellet 32 of FIG.
The heat that has passed through 33 is absorbed by the micro space heat absorption side 47a, causing a boiling phenomenon. The boiling gas 35b, which is a working fluid that has boiled and changed its phase, moves upward due to the vapor pressure and
It moves to 47b of micro space heat radiation side via 47c. The boiling gas 35b radiates heat at the micro space heat radiation side 47b, causing a condensation phenomenon. The condensed liquid 35b, which is the working fluid that has condensed and changed its phase, moves downward due to the action of gravity, moves to the micro space endothermic side 47a via the inclined side 47c, and repeats the above-described cycle.

Next, an example of the manufacturing process of the copper block 31 in this embodiment is shown in FIG. A plurality of columnar block spaces 49 are provided in the columnar block 48, and a pipe 50, which is manufactured by previously sealing and sealing a working fluid, is inserted into the columnar block spaces 49. The contact surface is fixed by brazing.

The pipe 50 may be a heat pipe 53 composed of a closed container 52 lined with water 35 and a porous material called a wick 51. The mode of heat transfer in this case will be described below with reference to FIG. A closed container 52, which is called a wick 51 and is lined with a porous material, is evacuated, and an appropriate amount of water 35 is enclosed. A portion receiving heat from the outside is called a wick heat absorbing side 52a, a portion releasing heat to the outside is called a wick heat radiating side 52b, and a portion connecting the wick heat absorbing side 52a and the wick heat radiating side 52b is called a wick heat insulating side 52c. Wick endotherm side 52
At a, the water in the wick evaporates due to the heat generated in the silicon pellet 32, and the boiling gas 35b passes through the wick adiabatic side 52c and moves to the wick radiating side 52b with a slight pressure difference. Here, the boiling gas 35b is condensed and condensed liquid 35
It becomes a and releases latent heat at that time. The condensed liquid 35a is
The capillary force of the wick 51 returns to the wick heat absorption side 52a,
Repeat the above cycle.

A sixth embodiment of the present invention will be described with reference to FIGS. 13 and 14.

In this embodiment, the heat radiation side 47b of the micro space portion in the fifth embodiment is projected to the outside of the copper block 31,
It is provided with 47d. The form of heat transfer is the same as that of the fifth embodiment, but by providing the protrusion 47d, the area in contact with the cooling device 30 increases, so the heat dissipation effect of the boiling gas 35b is enhanced, and the cooling device 30 itself. The capacity can be reduced, and the semiconductor module can be reduced in size.

The seventh embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the copper block 31 of the semiconductor element 25 is used.
By providing a circulation pipe through which a coolant flows from the outside, the semiconductor element 25 is cooled. Since the cooling device is not arranged directly outside the copper block 31, the size of the semiconductor module can be reduced. The mode of heat transfer in this example is as follows. The heat-filled refrigerant 61 passes through the circulation pipe 60 in the metal block and becomes a heat exchanger.
After being guided to 62 and dissipating heat to the outside, it is pressurized by the pump 63 and this cycle is repeated.

The eighth embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the circulation pipes 60 in the seventh embodiment intersect inside the copper block 31, so that a large amount of heat is transported near the central portion of the semiconductor element 25 which is hard to dissipate heat to the outside. can do. This allows the copper block
Since the cooling device 30 is not arranged directly outside the 31, the semiconductor module can be downsized.

The ninth embodiment of the present invention will be described with reference to FIGS.

In this embodiment, the circulation pipe 60 in the seventh embodiment penetrates the silicon pellet 32, the molybdenum plate 33 and the copper block 31. According to this embodiment, the eighth
Similar to the embodiment, it is possible to cool the vicinity of the central portion where it is difficult to dissipate heat to the outside, and the semiconductor module can be downsized.

The tenth embodiment of the present invention will be described with reference to FIG.

In this embodiment, a plurality of semiconductor elements in the seventh embodiment are provided, and a cooling device 64 is arranged in contact with the copper block 31. In contrast to the seventh embodiment, a cooling device 64 is installed separately, but the cooling device 64 can be downsized by installing the circulation pipe 60 or the like through which the refrigerant 61 passes, which contributes to downsizing of the semiconductor module. .

The eleventh embodiment of the present invention will be described with reference to FIG.

In this embodiment, the refrigerant 61, the heat exchanger 62 and the pump 63, which are shared by a plurality of semiconductor elements in the tenth embodiment, are also used for the cooler 64.

A twelfth embodiment of the present invention will be described with reference to FIG.

The present embodiment is a semiconductor device 25 of the ninth embodiment and a cooling device downsized by using the same.
64 is a semiconductor module in which it is disposed in contact with.

A thirteenth embodiment of the present invention will be described with reference to FIGS. 24 and 25.

In this embodiment, a temperature sensor 65 is provided in a part of the circulation pipe, and the pump is based on the information from the temperature sensor 65.
A control device 66 for automatically controlling the operating state of 63, for example, the time interval for reversing the discharge direction is provided. By providing the pump 63 with a function of reversing the discharge direction at regular or indefinite intervals, it becomes possible to cool according to the heat generation state, and as shown in FIG. 25, the refrigerant temperature in the circulation pipe 60 can be leveled. it can. As a result, a small heat exchanger can be used, and the semiconductor module can be downsized. This embodiment can also be applied to the eighth to twelfth embodiments.

[0052]

As described above, according to the present invention, a cooling device for cooling a semiconductor element can be downsized, and a space-saving semiconductor module can be supplied.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device module according to a first embodiment of the present invention.

FIG. 2 is a schematic view of a closed loop type space portion in the first embodiment according to the present invention.

FIG. 3 is a schematic diagram of a semiconductor device module according to a first embodiment of the present invention.

FIG. 4 is a method for manufacturing a metal block according to the first embodiment of the present invention.

FIG. 5 is a sectional view of a semiconductor device module according to a second embodiment of the present invention.

FIG. 6 is a schematic view of a closed loop type space portion in a second embodiment according to the present invention.

FIG. 7 is a sectional view of a semiconductor device module according to a third embodiment of the present invention.

FIG. 8 is a sectional view of a semiconductor device module according to a fourth embodiment of the present invention.

FIG. 9 is a sectional view of a semiconductor device module according to a fifth embodiment of the present invention.

FIG. 10 is a schematic view of a closed loop type space portion in a fifth embodiment according to the present invention.

FIG. 11 is a method for manufacturing a metal block according to the fifth embodiment of the present invention.

FIG. 12 is a sectional view of a heat pipe according to a fifth embodiment of the present invention.

FIG. 13 is a sectional view of a semiconductor device module according to a sixth embodiment of the present invention.

FIG. 14 is a schematic view of a closed loop type space portion in a sixth embodiment according to the present invention.

FIG. 15 is an external view of a semiconductor device module according to a seventh embodiment of the present invention.

FIG. 16 is a sectional view of a semiconductor device module according to a seventh embodiment of the present invention.

FIG. 17 is an external view of a semiconductor device module according to an eighth embodiment of the present invention.

FIG. 18 is a sectional view of a semiconductor device module according to an eighth embodiment of the present invention.

FIG. 19 is an external view of a semiconductor device module according to a ninth embodiment of the present invention.

FIG. 20 is a sectional view of a semiconductor device module according to a ninth embodiment of the present invention.

FIG. 21 is an external view of a semiconductor device module according to a tenth embodiment of the present invention.

FIG. 22 is an external view of a semiconductor device module according to an eleventh embodiment of the present invention.

FIG. 23 is an external view of a semiconductor device module according to a twelfth embodiment of the present invention.

FIG. 24 is an external view of a semiconductor device module according to a thirteenth embodiment of the present invention.

FIG. 25 is a temperature state of the refrigerant in the thirteenth embodiment according to the present invention.

FIG. 26 is a schematic view of a conventional semiconductor module.

FIG. 27 is an external view of a conventional semiconductor element.

FIG. 28 is a sectional view of a conventional semiconductor module.

[Explanation of symbols]

 25 ... Semiconductor element 30, 64 ... Cooling device 31 ... Copper block 32 ... Silicon pellet 33 ... Molybdenum plate 34, 44 ... Closed loop type space part 34a ... Space part heat absorption side 34b ... Space part heat radiation side 34c ... Space part inclined side 35 ... Water 35a… Condensed liquid 35b… Boiling gas 36… Ceramic guide 40… Space part creating block 41… Hollow cylindrical block 42… Internal support block 43… End face block 45, 46… Closed loop type micro space part 47… Linear micro space Part 47a ... Micro space part heat absorption side 47b ... Micro space part heat radiation side 47c ... Micro space part inclined side 47d ... Projection part 48 ... Cylindrical block 49 ... Cylindrical block space part 50 ... Pipe 51 ... Wick 52 ... Sealed container 52a ... Wick heat absorption side 52b… Wick heat radiation side 52c… Wick heat insulation side 53… Heat pipe 60… Circulation pipe 61… Refrigerant 62… Heat exchanger 63… Pump 65… Temperature sensor 66… Automatic control device

Claims (11)

[Claims] 1. A pair of electrode means to which electric power is supplied, a switching means for switching the electric power, and a heat generated by the switching means located between the electrode means and the switching means. A thermal buffering means for preventing direct transmission to the first means, a first cooling means at least a part of which is provided inside the electrode means, and a second cooling means provided outside the electrode means for cooling the electrode means.
And a storage means for storing the electrode means, the switching means and the thermal buffer means. 2. The semiconductor module according to claim 1, wherein the first cooling means is a flow path through which a working fluid that boils and condenses with the heat generated by the switching means circulates. 3. The first cooling means is a flow path in which a working fluid that boils and condenses due to the heat generated by the switching means circulates, and a part of which has an inclined portion. The semiconductor module according to claim 1. 4. The first cooling means is provided with a part of a flow path in which a working fluid that is boiled and condensed by the heat generated by the switching means circulates outside the electrode means. The semiconductor module according to claim 1. 5. The first cooling means is a plurality of flow paths through which a working fluid that boils and condenses with the heat generated by the switching means circulates.
The semiconductor module described. 6. The semiconductor module according to claim 2, wherein a heat pipe having a wick is used as a flow path through which the working fluid circulates. 7. A pair of electrode means to which electric power is supplied, a switching means for switching the electric power, and a heat generated by the switching means, which is located between the electrode means and the switching means. A heat buffering means for preventing the heat from directly being transmitted to the flow path, a flow path means through which the refrigerant flows through the electrode means, a heat exchanging means for exchanging heat of the refrigerant, and a pressurizing means for applying pressure to the refrigerant and sending it out. ,
A semiconductor module comprising: a housing means for housing the electrode means, the switching means, and the thermal buffer means. 8. A semiconductor module comprising a cooling means provided outside the electrode means for cooling the electrode means. 9. The semiconductor module according to claim 7, wherein the flow path means is a flow path means that intersects in the electrode means. 10. The semiconductor module according to claim 7, wherein the flow path means is a means that penetrates the electrode means, the switching means, and the thermal buffer means. 11. The semiconductor module according to claim 7, wherein the pressurizing unit is a control unit that automatically controls the circulation of the refrigerant.