JPH09288963A - Electric field emission cold cathode array, and picture image display device using it - Google Patents
Electric field emission cold cathode array, and picture image display device using itInfo
- Publication number
- JPH09288963A JPH09288963A JP10259596A JP10259596A JPH09288963A JP H09288963 A JPH09288963 A JP H09288963A JP 10259596 A JP10259596 A JP 10259596A JP 10259596 A JP10259596 A JP 10259596A JP H09288963 A JPH09288963 A JP H09288963A
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- JP
- Japan
- Prior art keywords
- field emission
- cold cathode
- power supply
- gate electrode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電界放出型冷陰極
アレイ及びこれを用いた画像表示装置に係り、特に、冗
長機構を有する電界放出型冷陰極アレイ及びこれを用い
た画像表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission cold cathode array and an image display apparatus using the same, and more particularly to a field emission cold cathode array having a redundant mechanism and an image display apparatus using the same.
【0002】[0002]
【従来の技術】電界放出型冷陰極は、半導体素子の製造
に利用される微細加工技術を用いて製造することが可能
であり、種々の利点を有するため、様々な分野での利用
が検討されている。即ち、フィラメントが不要であるた
め現在広く使用されている熱陰極に比べ発熱のための電
力が不要となる、単位面積当りの電子数が格段に多い、
構造が単純で微細化や平面化が容易である、耐環境性に
優れる、等の理由から、各種真空IC、マイクロ波真空
管、平面表示装置の電子源等の用途に、関心を集めてい
る。特に、電界放出型冷陰極を電子源に用いた電界放出
型ディスプレイ(Field Emission Display:FED)は、高
輝度で、視野依存性がなく、しかも低消費電力で、平面
型画像表示装置となり得ることから、注目を浴び、研究
・開発が活発に行われている。2. Description of the Related Art A field emission type cold cathode can be manufactured by using a fine processing technique used for manufacturing a semiconductor device and has various advantages. Therefore, its use in various fields has been studied. ing. That is, since a filament is not needed, electric power for heat generation is unnecessary as compared with the currently widely used hot cathode, and the number of electrons per unit area is remarkably large.
Because of its simple structure, easy miniaturization and flattening, and excellent environmental resistance, it is attracting interest in various vacuum ICs, microwave vacuum tubes, electron sources for flat panel display devices, and the like. In particular, a field emission display (FED) that uses a field emission cold cathode as an electron source can be a flat image display device with high brightness, no field dependence, and low power consumption. Since then, research and development have been actively carried out.
【0003】従来のFEDの一例を図5に示す。図5に
おいて、(a)はFEDの部分断面図、(b)はFED
に用いられる電界放出型冷陰極アレイの分解斜視図を示
す。図5において、参照符号31は電界放出型冷陰極ア
レイ基板を示す。この電界放出型冷陰極アレイ31は、
絶縁性の支持基板32上に、電界放出型冷陰極34に電
流を供給するためのカソ−ド導電部33を短冊状に形成
し、この上に直接または抵抗層(図示せず)を介して電
界放出型冷陰極34を形成し、更にこの上に絶縁層35
を介してゲート電極36をカソ−ド導電部33と直交す
る方向に短冊状に形成してなる。このゲート電極36に
は、各電界放出型冷陰極34に対応して開口部が設けら
れている。An example of a conventional FED is shown in FIG. In FIG. 5, (a) is a partial sectional view of the FED, and (b) is the FED.
FIG. 3 is an exploded perspective view of a field emission cold cathode array used in the above. In FIG. 5, reference numeral 31 indicates a field emission cold cathode array substrate. The field emission cold cathode array 31 is
A cathode conductive portion 33 for supplying a current to the field emission cold cathode 34 is formed in a strip shape on an insulating support substrate 32, and is directly or through a resistance layer (not shown) thereon. A field emission cold cathode 34 is formed, and an insulating layer 35 is further formed thereon.
The gate electrode 36 is formed in the shape of a strip in the direction orthogonal to the cathode conductive portion 33. The gate electrode 36 is provided with an opening corresponding to each field emission cold cathode 34.
【0004】一方、参照符号37はアノード基板を示
し、透明な絶縁基板38上にアノード電極となる透明電
極39を形成し、この上にR(赤色),G(緑色),B
(青色)に発光する蛍光体層40R,40G,40B
(図示せず)を形成してなる。電界放出型冷陰極アレイ
基板31とアノード基板37は、スペーサー(図示せ
ず)により一定の距離を保つように平行に並設され、内
部を高真空にし、周辺をフリットガラスにより封じられ
ている。On the other hand, reference numeral 37 indicates an anode substrate, and a transparent electrode 39 serving as an anode electrode is formed on a transparent insulating substrate 38, on which R (red), G (green), B is formed.
Phosphor layers 40R, 40G, 40B that emit (blue) light
(Not shown). The field emission type cold cathode array substrate 31 and the anode substrate 37 are arranged side by side in parallel by a spacer (not shown) so as to keep a constant distance, the inside is made a high vacuum, and the periphery is sealed by frit glass.
【0005】ここでカソ−ド導電部33のうち33bを
マイナス電位とし、ゲート電極36のうち36bをプラ
ス電位に電圧をあげていくと、カソ−ド導電部33bと
ゲート電極36bの交わる部分にある電界放出型冷陰極
34bの先端から電子が放出される。このとき対向する
アノード基板37にプラスの電位をかけておけば、例え
ば電界放出型冷陰極34の先端から放出された電子が対
応する蛍光体層40Gに衝突した場合、Gに発光して画
像表示が可能となる。When the voltage is raised to a positive potential on the gate electrode 36 by making 33b of the cathode conductive portion 33 negative, and at the intersection of the cathode conductive portion 33b and the gate electrode 36b. Electrons are emitted from the tip of a certain field emission cold cathode 34b. At this time, if a positive electric potential is applied to the opposing anode substrate 37, for example, when electrons emitted from the tip of the field emission cold cathode 34 collide with the corresponding phosphor layer 40G, G is emitted to display an image. Is possible.
【0006】しかし、以上のような電界放出型冷陰極ア
レイでは、電界放出型冷陰極34とゲート電極36の間
が数μmと狭い上、強い電界がかかっているので、真空
中にもともと存在するか、又は電界放出型冷陰極アレイ
基板に起因する微細なちりや、アノード電極から脱落し
た蛍光体粒子が、電界放出型冷陰極34とゲート電極3
6間に落ち込むと、ショートし易く、その上一度挟まる
と容易に離れないという問題がある。このような問題が
生じた場合、対応する画素、或いは場合によってはディ
スプレイ全体にわたって電子放出が停止してしまうとい
う致命的な問題を引き起こし、FEDの実用化には、そ
の解決が必要であった。However, in the field-emission cold cathode array as described above, the distance between the field-emission cold cathode 34 and the gate electrode 36 is as small as several μm, and a strong electric field is applied, so that it exists originally in a vacuum. Alternatively, fine dust caused by the field emission type cold cathode array substrate or phosphor particles that have fallen off from the anode electrode may cause the field emission type cold cathode 34 and the gate electrode 3.
There is a problem that if it falls in between 6, a short circuit is likely to occur, and once it is sandwiched, it cannot be easily separated. When such a problem occurs, it causes a fatal problem that electron emission stops in the corresponding pixel, or in some cases, in the entire display, and it is necessary to solve the problem in order to put the FED into practical use.
【0007】[0007]
【発明が解決しようとする課題】本発明は、上述した問
題を解決するためになされたものであり、画素の一部に
おいて電界放出型冷陰極とゲート電極とがショートした
場合でも、FED全体としての動作を保障し得る電界放
出型冷陰極アレイ及びこれを用いた画像表示装置を提供
することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and even when a field emission type cold cathode and a gate electrode are short-circuited in a part of a pixel, the entire FED is It is an object of the present invention to provide a field emission type cold cathode array capable of ensuring the above operation and an image display device using the same.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するた
め、本発明(請求項1)は、電子を放出する電界放射型
冷陰極と、前記電界放射型冷陰極に電流を供給するカソ
−ド導電部と、前記カソ−ド導電部に電流を供給する第
1の給電線と、前記電界放射型冷陰極からの電子流を制
御するゲート電極と、前記ゲート電極に電流を給電する
第2の給電線とを具備し、前記カソ−ド導電部と第1の
給電線の間、及びゲート電極と第2の給電線の間の少な
くとも一方に、過電流による溶断機構を備えたことを特
徴とする電界放出型冷陰極アレイを提供する。In order to solve the above problems, the present invention (Claim 1) provides a field emission cold cathode which emits electrons, and a cathode which supplies a current to the field emission cold cathode. A conductive part, a first power supply line for supplying a current to the cathode conductive part, a gate electrode for controlling an electron flow from the field emission cold cathode, and a second power supply for supplying a current to the gate electrode. A power supply line, and at least one of the cathode conductive portion and the first power supply line and between the gate electrode and the second power supply line is provided with a fusing mechanism due to overcurrent. A field emission cold cathode array is provided.
【0009】また、本発明(請求項2)は、請求項1記
載の電界放出型冷陰極アレイにおけるゲート電極が、画
素を構成する単位内で複数個が独立して形成され、前記
独立して形成される各ゲート電極と第2の給電線との間
に、過電流による溶断機構を備えたことを特徴とする。According to the present invention (claim 2), a plurality of gate electrodes in the field emission type cold cathode array according to claim 1 are independently formed in a unit constituting a pixel, and the gate electrodes are independently formed. A feature is that a fusing mechanism due to overcurrent is provided between each formed gate electrode and the second power supply line.
【0010】また、本発明(請求項3)は、請求項1記
載の電界放出型冷陰極アレイにおけるカソ−ド導電部
が、画素を構成する単位内で複数個が独立して形成さ
れ、前記独立して形成される各カソ−ド導電部と第1の
給電線との間に、過電流による溶断機構を備えたことを
特徴とする。Further, according to the present invention (claim 3), a plurality of cathode conductive parts in the field emission type cold cathode array according to claim 1 are independently formed in a unit constituting a pixel. The present invention is characterized in that a fusing mechanism due to an overcurrent is provided between each cathode conductive portion formed independently and the first power supply line.
【0011】また、本発明(請求項4)は、請求項1記
載の電界放出型冷陰極アレイにおける過電流による溶断
機構が、低融点金属またはその合金からなる配線、給電
線に比較し断面積を小さくした配線、または低融点金属
またはその合金からなる給電線に比較し断面積を小さく
した配線であることを特徴とする。According to the present invention (claim 4), the fusing mechanism due to overcurrent in the field emission type cold cathode array according to claim 1 has a cross-sectional area as compared with a wiring or a feeder line made of a low melting point metal or its alloy. The wiring is characterized in that it has a smaller cross-sectional area than that of a wiring having a small size or a power supply line made of a low melting point metal or an alloy thereof.
【0012】また、本発明(請求項5)は、電子を放出
する電界放射型冷陰極と、前記電界放射型冷陰極に電流
を供給するカソ−ド導電部と、前記カソ−ド導電部に電
流を供給する第1の給電線と、前記電界放射型冷陰極か
らの電子流を制御するゲート電極と、前記ゲート電極に
電流を給電する第2の給電線を具備し、前記カソ−ド導
電部と第1の給電線の間、及びゲート電極と第2の給電
線の間の少なくとも一方に、過電流による溶断機構を備
えた電界放出型冷陰極アレイ、及び前記電界放出型冷陰
極から放出された電子を衝突、発光せしめる蛍光面を有
することを特徴とする画像表示装置を提供する。According to the present invention (claim 5), a field emission type cold cathode which emits electrons, a cathode conductive part which supplies a current to the field emission type cold cathode, and a cathode conductive part are provided. The cathode conductor includes a first power supply line for supplying a current, a gate electrode for controlling an electron flow from the field emission cold cathode, and a second power supply line for supplying a current to the gate electrode. Emission field cold cathode array provided with a fusing mechanism due to overcurrent between at least one of the portion and the first power supply line and between the gate electrode and the second power supply line, and emission from the field emission type cold cathode Provided is an image display device having a phosphor screen which causes the emitted electrons to collide with each other to emit light.
【0013】本発明の電界放出型冷陰極アレイは、カソ
−ド導電部と第1の給電線の間、及びゲート電極と第2
の給電線の間の少なくとも一方に、過電流による溶断機
構を備えているので、電界放射型冷陰極とゲート電極が
ショートした場合、カソ−ド導電部と第1の給電線の
間、及びゲート電極と第2の給電線の間の少なくとも一
方に設けた溶断機構が過電流により溶断し、ショートし
た部分が他から切り離される。そのため、他の部分には
正常な電圧が印加され、引き続き電子放射が行われる。The field emission type cold cathode array according to the present invention is provided between the cathode conductive portion and the first power feed line, and between the gate electrode and the second feed line.
Since a fusing mechanism due to overcurrent is provided in at least one of the power supply lines of 1., when the field emission type cold cathode and the gate electrode are short-circuited, between the cathode conductive part and the first power supply line, and the gate. The fusing mechanism provided on at least one of the electrode and the second power supply line is fused by an overcurrent, and the short-circuited portion is separated from the other portions. Therefore, a normal voltage is applied to the other parts, and electron emission is continued.
【0014】このような本発明においては、電界放出型
冷陰極に電流を供給するカソ−ド導電部およびゲ−ト電
極に、それぞれさらにカソ−ド導電部に電流を供給する
第1の給電線、およびゲ−ト電極に電流を供給する第2
の給電線を設けることにより、過電流による溶断機構を
備えることが可能となる構成となる。In the present invention as described above, the first power supply line for supplying current to the cathode conductive portion and the gate electrode for supplying current to the field emission type cold cathode, respectively. , And second for supplying current to the gate electrode
The provision of the power supply line makes it possible to provide a fusing mechanism due to overcurrent.
【0015】この場合、カソ−ド導電部と第1の給電線
の間、及びゲート電極と第2の給電線の間の少なくとも
一方に、過電流による溶断機構を備えることにより、本
発明の目的を達成することが可能であるが、双方に溶断
機構を備えることにより、十分な効果を得ることが出来
る。In this case, an object of the present invention is to provide a fusing mechanism due to an overcurrent between at least one of the cathode conductive portion and the first power feed line and between at least one of the gate electrode and the second power feed line. Although it is possible to achieve the above, a sufficient effect can be obtained by providing a fusing mechanism on both sides.
【0016】なお、カソ−ド導電部と第1の給電線の
間、及びゲート電極と第2の給電線の間の少なくとも一
方に、過電流による溶断機構を備える場合には、溶断機
構を備えない側の構成は、従来の構成のまま、すなわち
給電線を備えない構成であってもよい。When a fusing mechanism due to overcurrent is provided between at least one of the cathode conductive portion and the first power feeding line and between the gate electrode and the second power feeding line, the fusing mechanism is provided. The configuration on the non-existing side may be the same as the conventional configuration, that is, a configuration without a power supply line.
【0017】本発明のより好ましい効果を得るために
は、ゲ−ト電極を、画素を構成する単位内で複数個が独
立して形成し、前記独立して形成される各ゲ−ト電極と
第2の給電線との間に、過電流による溶断機構を備える
構成とすることが好ましい。In order to obtain a more preferable effect of the present invention, a plurality of gate electrodes are independently formed in a unit forming a pixel, and each of the gate electrodes is formed independently. It is preferable that a fusing mechanism due to overcurrent is provided between the second power supply line and the second power feeding line.
【0018】これは、図5に示すように、従来のゲ−ト
電極を短冊状に形成するのではなく、さらに画素を構成
する単位内で複数個分割し、さらに小さな単位でゲ−ト
電極を構成し、各ゲ−ト電極と第2の給電線との間に本
発明の溶断機構を備えれば、ショ−トして切り離される
部分が1つの画素分よりさらに小さな単位となり、より
良好な電子放射が得られるのである。例えば、1つの画
素を構成するゲ−ト電極を4分割独立して構成した場合
には、その中の1つのゲ−ト電極と第2の給電線との間
で溶断し、その部分が発光しない状態となっても、他の
3ヶ所の部分は問題がないため、1画素全てが発光しな
いという状態は発生しない。As shown in FIG. 5, the conventional gate electrode is not formed in a strip shape, but is divided into a plurality of units constituting a pixel, and the gate electrode is divided into smaller units. If the fusing mechanism of the present invention is provided between each gate electrode and the second power supply line, the portion cut off by shorting becomes a unit smaller than one pixel, which is better. That is, a good electron emission can be obtained. For example, when the gate electrode forming one pixel is divided into four parts and independently formed, one gate electrode in the pixel is fused with the second power supply line, and that portion emits light. Even if the state does not occur, since there is no problem in the other three parts, the state that all one pixel does not emit light does not occur.
【0019】また、本発明のより好ましい効果を得るた
めには、カソ−ド導電部を画素を構成する単位内で複数
個が独立して形成し、前記独立して形成される各カソ−
ド導電部と第1の給電線との間に、過電流による溶断機
構を備える構成とすることが好ましい。Further, in order to obtain a more preferable effect of the present invention, a plurality of cathode conductive portions are independently formed in a unit constituting a pixel, and each of the independently formed cathodes is formed.
It is preferable that a fusing mechanism due to overcurrent is provided between the conductive portion and the first power supply line.
【0020】これは、図5に示すように、従来のカソ−
ド導電部を短冊状に形成するのではなく、さらに画素を
構成する単位のような小さな単位でカソ−ド導電部を構
成し、各カソ−ド導電部と第1の給電線との間に本発明
の溶断機構を備えれば、ショ−トして切り離される部分
が小さくなり、より良好な電子放射が得られるのであ
る。例えば、1つの画素を構成するカソ−ド導電部を4
分割独立して構成した場合には、その中の1つのカソ−
ド導電部と第1の給電線との間で溶断し、その部分が発
光しない状態となっても、他の3ヶ所の部分は問題がな
いため、1画素全てが発光しないという状態は発生しな
い。This is as shown in FIG.
The cathode conductive portion is not formed in a strip shape, but the cathode conductive portion is formed by a small unit such as a unit forming a pixel, and the cathode conductive portion is provided between each cathode conductive portion and the first power supply line. If the fusing mechanism of the present invention is provided, the portion cut off by shorting becomes smaller, and better electron emission can be obtained. For example, four cathode conductive parts forming one pixel are used.
When configured separately, one of the
Even if the conductive portion and the first power supply line are melted and the part does not emit light, there is no problem in the other three parts, so that the state where all one pixel does not emit light does not occur. .
【0021】また、過電流による溶断機構は、低融点金
属またはその合金からなる配線、給電線に比較し断面積
を小さくした配線、または低融点金属またはその合金か
らなる給電線に比較し断面積を小さくした配線であって
もよい。Further, the fusing mechanism due to overcurrent has a cross-sectional area smaller than that of a wiring made of a low melting point metal or its alloy, a wiring having a smaller cross-sectional area than that of a power feeding line, or a power feeding line made of a low melting point metal or its alloy. The wiring may be made smaller.
【0022】上記溶断機構を構成する配線は、第1の給
電線または第2の給電線に比較して、低融点であるた
め、あるいは低融点断面積を小さくし高抵抗とすること
により、過電流が加わった場合に各給電線より先に溶断
することが可能となり、本発明の効果を得ることが可能
となる。The wiring forming the fusing mechanism has a lower melting point than that of the first power feeding line or the second power feeding line, or the low melting point cross-sectional area is made small so as to have high resistance. When an electric current is applied, it can be blown out before each power supply line, and the effect of the present invention can be obtained.
【0023】ここで、低融点金属またはその合金として
は、Ni−Cr、Cr等を使用することができる。ま
た、かかる電界放出型冷陰極アレイを具備する画像表示
装置は、電界放出型冷陰極とゲート電極がショートした
場合、カソ−ド導電部と第1の給電線の間、及びゲート
電極と第2の給電線の間の少なくとも一方に設けた溶断
機構が過電流により溶断し、ショートした部分が他から
切り離されので、他の部分には正常な電圧が印加され、
引き続き電子放射が行われ、引き続き正常な画像表示が
可能となる。As the low melting point metal or its alloy, Ni-Cr, Cr or the like can be used. In addition, in the image display device including the field emission type cold cathode array, when the field emission type cold cathode and the gate electrode are short-circuited, between the cathode conductive portion and the first power supply line, and between the gate electrode and the second feed line. The fusing mechanism provided on at least one of the power supply lines of fusing melts due to overcurrent, and the short-circuited part is separated from the other part, so that a normal voltage is applied to the other part.
Electron emission is continued and normal image display is possible.
【0024】[0024]
【発明の実施の形態】以下、図面を参照して、本発明の
実施例について詳細に説明する。図1は、本発明の一実
施例に係るFEDを分解した状態の分解斜視図である。
図1において、(a)はアノード基板、(b)は電界放
出型冷陰極アレイ基板をそれぞれ示す。図1(b)に示
す電界放出型冷陰極アレイ基板11は、絶縁性の支持基
板12上に、電界放出型冷陰極14に電流を供給するた
めの第1の給電線13aと、この給電線から溶断機構1
9を介して形成されたカソード導電体13bを形成し、
このカソード導電体13b上に直接または抵抗層(図示
せず)を介して電界放出型冷陰極14を形成し、更にこ
の上に絶縁層15を介して第1の給電線13と直交する
方向に第2の給電線15aを形成し、この第2の給電線
15aから溶断機構19を介し、ゲート電極15bを形
成してなる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is an exploded perspective view of an FED according to an embodiment of the present invention in a disassembled state.
In FIG. 1, (a) shows an anode substrate and (b) shows a field emission cold cathode array substrate. The field emission type cold cathode array substrate 11 shown in FIG. 1B has a first feeder line 13a for supplying a current to the field emission type cold cathode 14 on an insulating support substrate 12, and this feeder line. From fusing mechanism 1
9 to form the cathode conductor 13b formed,
A field emission type cold cathode 14 is formed on the cathode conductor 13b directly or via a resistance layer (not shown), and an insulating layer 15 is further formed on the field emission type cold cathode 14 in a direction orthogonal to the first power supply line 13. The second power supply line 15a is formed, and the gate electrode 15b is formed from the second power supply line 15a through the fusing mechanism 19.
【0025】図1におけるカソ−ド導電体13bおよび
ゲ−ト電極15bは、図面に示すように、例えば画素を
構成する単位のような小さな単位で島状に形成されてい
る。なお、図1において電界放出型冷陰極14は、カソ
ード導電体13bの全てに同様に形成されており、また
ゲート電極15bの全てに電界放出型冷陰極14に対応
して開口部が設けられている。As shown in the drawing, the cathode conductor 13b and the gate electrode 15b in FIG. 1 are formed in an island shape in small units such as units forming pixels. In FIG. 1, the field emission cold cathode 14 is formed on all the cathode conductors 13b in the same manner, and all the gate electrodes 15b are provided with openings corresponding to the field emission cold cathode 14. There is.
【0026】一方、図1(a)に示すアノード基板16
は、透明な絶縁基板17上にアノード電極となるITO
等よりなる透明電極18を形成し、この上にR,G,B
に発光する蛍光体層1R,1G,1Bを形成してなる。
電界放出型冷陰極アレイ基板11とアノード基板16
は、スペーサー(図示せず)で一定の距離を保つように
平行に並設され、内部を高真空にし、周辺をフリットガ
ラスにより封じられている。On the other hand, the anode substrate 16 shown in FIG.
Is the ITO that will become the anode electrode on the transparent insulating substrate 17.
A transparent electrode 18 made of, for example, R, G, B
The phosphor layers 1R, 1G, and 1B that emit light are formed.
Field emission cold cathode array substrate 11 and anode substrate 16
Are arranged in parallel in parallel with each other with a spacer (not shown) so as to keep a certain distance, the inside is made a high vacuum, and the periphery is sealed with frit glass.
【0027】このように構成される電界放出型冷陰極ア
レイ基板11の製造工程について図2〜図4を参照して
詳細に説明する。なお、図2〜4の(a)は斜視図、
(b)はその一部を取り出して示す断面図である。The manufacturing process of the field emission type cold cathode array substrate 11 thus constructed will be described in detail with reference to FIGS. 2A to 4A are perspective views,
(B) is sectional drawing which extracts and shows a part.
【0028】まず、例えば、厚さ1mmの青板ガラス基
板を支持基板12として用い、この上にスパッタリング
法などの公知の薄膜形成技術によりTa,Moなどの金
属薄膜を100nm程度の厚さに形成し、公知のフォト
リソグラフィ−法を用いて、この薄膜をパタ−ニング
し、第1の給電線13aとカソード導電体13bを形成
する(図2)。次いで、第1の給電線13aとカソード
導電体13bの間に、マスクスパッタやフォトリソグラ
フィ−法を用いて、Ni−Cr、Crなどからなる溶断
機構19を形成する(図3)。First, for example, a soda-lime glass substrate having a thickness of 1 mm is used as the support substrate 12, and a metal thin film such as Ta or Mo is formed on the support substrate 12 to a thickness of about 100 nm by a known thin film forming technique such as a sputtering method. The thin film is patterned by using a known photolithography method to form the first power supply line 13a and the cathode conductor 13b (FIG. 2). Then, a fusing mechanism 19 made of Ni-Cr, Cr or the like is formed between the first power supply line 13a and the cathode conductor 13b by mask sputtering or photolithography (FIG. 3).
【0029】これらの上にSiO2 膜などからなる絶縁
膜15を1μm程度の厚さに形成する。更にその上に、
公知の薄膜形成技術を用いて、Ta,Moなどからなる
金属薄膜を200nm程度の厚さに被着し、これを公知
のフォトリソグラフィ−法を用いてパタ−ニングし、第
2の給電線15aとゲート電極15aを形成する。な
お、この際、ゲート電極15aには、絶縁層15を貫通
し、カソード導電体13bが露出するような開口が形成
される。An insulating film 15 made of a SiO 2 film or the like is formed thereon with a thickness of about 1 μm. On top of that,
Using a known thin film forming technique, a metal thin film made of Ta, Mo or the like is deposited to a thickness of about 200 nm, and this is patterned by using a known photolithography method to form the second power supply line 15a. And the gate electrode 15a are formed. At this time, an opening is formed in the gate electrode 15a so as to penetrate the insulating layer 15 and expose the cathode conductor 13b.
【0030】次に、マスクスパッタやフォトリソグラフ
ィ−法を用いて、第2の給電線15aとゲート電極15
bの間に、Ni−Cr、Crなどからなる溶断機構19
を形成する。その後、絶縁層15を貫通し、カソード導
電体13bが露出した空孔内に、公知の回転蒸着法を用
いて、Moなどからなるコーン状の電界放出型冷陰極1
4を形成する(図4)。Next, the second power supply line 15a and the gate electrode 15 are formed by mask sputtering or photolithography.
Between b, the fusing mechanism 19 made of Ni-Cr, Cr, etc.
To form Then, a cone-shaped field emission cold cathode 1 made of Mo or the like is formed in a hole penetrating the insulating layer 15 and exposing the cathode conductor 13b by using a known rotary evaporation method.
4 (FIG. 4).
【0031】以上の本実施例に係る電界放出型冷陰極ア
レイでは、電界放出型冷陰極14の底部の径を0.8μ
m、高さを0.8μm、ゲート電極15aの開口部の径
を1.5μm、電界放出型冷陰極14先端とゲート電極
15aの距離を0.2μmとした。このようなデメンジ
ョンを有する電界放出型冷陰極アレイ基板11は、10
-9Torrの高真空下で、ゲート電圧85Vで、1μA
のゲート電流が正常値であったが、電界放出型冷陰極1
4とゲート電流15aを1カ所強制的にショートさせた
ところ、10mAを越える大電流が流れ、その部分の溶
断機構19は短時間で溶断することが確認された。In the field emission type cold cathode array according to this embodiment, the diameter of the bottom of the field emission type cold cathode 14 is 0.8 μm.
m, the height was 0.8 μm, the diameter of the opening of the gate electrode 15a was 1.5 μm, and the distance between the tip of the field emission cold cathode 14 and the gate electrode 15a was 0.2 μm. The field emission type cold cathode array substrate 11 having such dimensions has 10
-9 Torr high vacuum, gate voltage 85V, 1μA
Although the gate current was normal, the field emission cold cathode 1
4 and the gate current 15a were forcibly short-circuited at one place, it was confirmed that a large current exceeding 10 mA flows, and the fusing mechanism 19 in that portion blows in a short time.
【0032】以上説明した電界放出型冷陰極アレイに対
向して、蛍光面を配置することにより、平面型の画像表
示装置を得ることが出来る。なお本実施例では、カソー
ド導電体と第1の給電線の間、及びゲート電極と第2の
給電線の間のいずれにも、過電流による溶断機構を備え
ている場合について説明したが、カソード導電体と第1
の給電線の間、及びゲート電極と第2の給電線の間のい
ずれか一方に過電流による溶断機構を備えていれば、同
様の効果が期待できる。A flat type image display device can be obtained by arranging the phosphor screen so as to face the field emission type cold cathode array described above. In this embodiment, the case where the fusing mechanism due to overcurrent is provided between the cathode conductor and the first power supply line and between the gate electrode and the second power supply line has been described. Conductor and first
The same effect can be expected if the fusing mechanism due to overcurrent is provided between any one of the power feeding lines and between the gate electrode and the second power feeding line.
【0033】また、本実施例では、過電流による溶断機
構19は、低融点金属又は合金により構成し、かつ狭小
部を設けたが、溶断機構19としては、単に低融点金属
又は合金からなる導通路を設けるだけでも、又は導電体
の狭小部を設けるだけでもよい。Further, in this embodiment, the fusing mechanism 19 due to overcurrent is made of a low melting point metal or alloy, and the narrow portion is provided. However, the fusing mechanism 19 is made of a low melting point metal or alloy. Only the passage may be provided, or only the narrow portion of the conductor may be provided.
【0034】また、本発明の電界放出型冷陰極アレイお
よび画像表示装置の構成は、本発明で意図する溶断機構
を有するものであれば、何等他の構成を限定するもので
はない。The structure of the field emission type cold cathode array and the image display device of the present invention is not limited to any other structure as long as it has the fusing mechanism intended in the present invention.
【0035】[0035]
【発明の効果】以上説明したように、本発明の電界放出
型冷陰極アレイによれば、カソード導電体と第1の給電
線の間、及びゲート電極と第2の給電線の間の少なくと
も一方に、過電流による溶断機構を備えているので、カ
ソード導電体とゲート電極がショートした場合、溶断機
構が過電流により溶断し、ショートした部分が他から切
り離され、他の部分には正常に電圧が印加され、引き続
き電子放射が行われる。As described above, according to the field emission type cold cathode array of the present invention, at least one of the cathode conductor and the first feed line and the gate electrode and the second feed line. In addition, since the fusing mechanism due to overcurrent is provided, when the cathode conductor and the gate electrode are short-circuited, the fusing mechanism is blown by the overcurrent, the short-circuited part is separated from the other, and the other part is normally Is applied, and electron emission continues.
【0036】また、本発明の画像表示装置によれば、こ
のような電界放出型冷陰極アレイを具備しているため、
電界放射型冷陰極とゲート電極がショートした場合、溶
断機構が過電流により溶断し、ショートした部分が他か
ら切り離され、他の部分には正常に電圧が印加されるの
で、引き続き電子放射が行われ、引き続き画像表示が可
能となる。Further, according to the image display device of the present invention, since it is equipped with such a field emission type cold cathode array,
When the field emission type cold cathode and the gate electrode are short-circuited, the fusing mechanism melts due to overcurrent, the shorted part is separated from the other part, and the voltage is normally applied to the other part, so that the electron emission continues. Therefore, the image can be continuously displayed.
【0037】従って、本発明によれば、電界放出型冷陰
極アレイの冗長性を大幅に高めることができ、さらにこ
の電界放出型冷陰極アレイを用いた画像表示装置を始め
とする各種デバイスの信頼性を大幅に向上させることが
できる。Therefore, according to the present invention, the redundancy of the field emission type cold cathode array can be greatly enhanced, and the reliability of various devices including the image display apparatus using the field emission type cold cathode array can be improved. It is possible to significantly improve the sex.
【図1】本発明の一実施例に係る電界放出型冷陰極アレ
イを示す斜視図。FIG. 1 is a perspective view showing a field emission cold cathode array according to an embodiment of the present invention.
【図2】本発明の一実施例に係る電界放出型冷陰極アレ
イ製造工程を示す斜視図及び断面図。FIG. 2 is a perspective view and a cross-sectional view showing a field emission type cold cathode array manufacturing process according to an embodiment of the present invention.
【図3】本発明の一実施例に係る電界放出型冷陰極アレ
イ製造工程を示す斜視図及び断面図。FIG. 3 is a perspective view and a cross-sectional view showing a field emission type cold cathode array manufacturing process according to an embodiment of the present invention.
【図4】本発明の一実施例に係る電界放出型冷陰極アレ
イ製造工程を示す斜視図及び断面図。FIG. 4 is a perspective view and a cross-sectional view showing a field emission type cold cathode array manufacturing process according to an embodiment of the present invention.
【図5】従来の電界放出型ディスプレイを示す断面図お
よび電界放出型冷陰極アレイを示す分解斜視図。FIG. 5 is a cross-sectional view showing a conventional field emission display and an exploded perspective view showing a field emission cold cathode array.
11…電界放出型冷陰極アレイ基板、12…支持基板、
13a…第1の給電線、13b…カソード導電体、14
…電界放出型冷陰極、15…絶縁層、15a…第2の給
電線、15b…ゲート電極、19…溶断機構。11 ... Field emission type cold cathode array substrate, 12 ... Support substrate,
13a ... 1st feeder, 13b ... Cathode conductor, 14
Field emission type cold cathode, 15 ... Insulating layer, 15a ... Second feeder, 15b ... Gate electrode, 19 ... Fusing mechanism.
Claims (5)
記電界放射型冷陰極に電流を供給するカソ−ド導電部
と、前記カソ−ド導電部に電流を供給する第1の給電線
と、前記電界放射型冷陰極からの電子流を制御するゲー
ト電極と、前記ゲート電極に電流を給電する第2の給電
線とを具備し、前記カソ−ド導電部と第1の給電線の
間、及びゲート電極と第2の給電線の間の少なくとも一
方に、過電流による溶断機構を備えたことを特徴とする
電界放出型冷陰極アレイ。1. A field emission cold cathode that emits electrons, a cathode conductive portion that supplies a current to the field emission cold cathode, and a first power supply line that supplies a current to the cathode conductive portion. A gate electrode for controlling an electron flow from the field emission cold cathode, and a second power supply line for supplying a current to the gate electrode, and the cathode conductive portion and the first power supply line are connected to each other. A field emission type cold cathode array characterized in that a fusing mechanism due to overcurrent is provided in at least one of the space and between the gate electrode and the second power supply line.
内で複数個が独立して形成され、前記独立して形成され
る各ゲート電極と第2の給電線との間に、過電流による
溶断機構を備えたことを特徴とする請求項1に記載の電
界放出型冷陰極アレイ。2. A plurality of the gate electrodes are independently formed within a unit forming a pixel, and an overcurrent is generated between each of the independently formed gate electrodes and the second power supply line. The field emission cold cathode array according to claim 1, further comprising a fusing mechanism.
単位内で複数個が独立して形成され、前記独立して形成
される各カソ−ド導電部と第1の給電線との間に、過電
流による溶断機構を備えたことを特徴とする請求項1に
記載の電界放出型冷陰極アレイ。3. A plurality of the cathode conductive portions are independently formed within a unit forming a pixel, and each of the cathode conductive portions and the first power supply line are independently formed. The field emission cold cathode array according to claim 1, further comprising a fusing mechanism for overcurrent.
属またはその合金からなる配線、給電線に比較し断面積
を小さくした配線、または低融点金属またはその合金か
らなる給電線に比較し断面積を小さくした配線であるこ
とを特徴とする請求項1に記載の電界放出型冷陰極アレ
イ。4. The melting mechanism due to the overcurrent is cut in comparison with a wiring made of a low melting point metal or an alloy thereof, a wiring having a smaller cross-sectional area than a feeding line, or a feeding line made of a low melting point metal or an alloy thereof. The field emission type cold cathode array according to claim 1, which is a wiring having a small area.
記電界放射型冷陰極に電流を供給するカソ−ド導電部
と、前記カソ−ド導電部に電流を供給する第1の給電線
と、前記電界放射型冷陰極からの電子流を制御するゲー
ト電極と、前記ゲート電極に電流を給電する第2の給電
線を具備し、前記カソ−ド導電部と第1の給電線の間、
及びゲート電極と第2の給電線の間の少なくとも一方
に、過電流による溶断機構を備えた電界放出型冷陰極ア
レイ、及び前記電界放出型冷陰極から放出された電子を
衝突、発光せしめる蛍光面を有することを特徴とする画
像表示装置。5. A field emission cold cathode that emits electrons, a cathode conductive portion that supplies a current to the field emission cold cathode, and a first power supply line that supplies a current to the cathode conductive portion. A gate electrode for controlling an electron flow from the field emission cold cathode, and a second power supply line for supplying a current to the gate electrode, between the cathode conductive part and the first power supply line. ,
And a field emission type cold cathode array having a fusing mechanism due to overcurrent on at least one of the gate electrode and the second power supply line, and a phosphor screen for causing electrons emitted from the field emission type cold cathode to collide and emit light. An image display device comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10259596A JPH09288963A (en) | 1996-04-24 | 1996-04-24 | Electric field emission cold cathode array, and picture image display device using it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10259596A JPH09288963A (en) | 1996-04-24 | 1996-04-24 | Electric field emission cold cathode array, and picture image display device using it |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09288963A true JPH09288963A (en) | 1997-11-04 |
Family
ID=14331599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10259596A Abandoned JPH09288963A (en) | 1996-04-24 | 1996-04-24 | Electric field emission cold cathode array, and picture image display device using it |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09288963A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1054427A2 (en) | 1999-05-18 | 2000-11-22 | Sony Corporation | Cathode panel for a cold cathode field emission diplay and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
JP2006092827A (en) * | 2004-09-22 | 2006-04-06 | Canon Inc | Manufacturing method of electron beam apparatus, and the electron beam apparatus |
-
1996
- 1996-04-24 JP JP10259596A patent/JPH09288963A/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1054427A2 (en) | 1999-05-18 | 2000-11-22 | Sony Corporation | Cathode panel for a cold cathode field emission diplay and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
EP1054427A3 (en) * | 1999-05-18 | 2007-09-05 | Sony Corporation | Cathode panel for a cold cathode field emission diplay and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
JP2006092827A (en) * | 2004-09-22 | 2006-04-06 | Canon Inc | Manufacturing method of electron beam apparatus, and the electron beam apparatus |
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A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20041217 |