JPH09283704A - Chip composite electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chip composite electronic component in which a wider setting range of the capacitance of a capacitor and the resistance of a resistor is designed. SOLUTION: A first electrode 3 and a second electrode 4 are formed on a surface of an electrical insulation substrate with split grooves, apart for each unit chip substrate 2. A first upper electrode 7 whose area in designed to obtain a prescribed capacitance is formed on an upper face of a dielectric material 6 formed on an upper face of the first electrode 3. A first protective film 10 is formed to cover the dielectric material 6 and the first upper electrode 7 while leaving a second upper electrode 8 exposed that is formed on an upper face of the first upper electrode 7. A resistance film 11 is formed over an upper face of the first protective film 10 and also on part of the second upper electrode 8. A second protective film 12 is formed over an upper electrode 9 and the resistance film 11 while leaving part of the first electrode 3 and the second electrode 4 exposed. A CR chip composite component 1 is formed by splitting the substrate along the split grooves.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip composite electronic component in which electrodes, a dielectric and a resistance film are laminated on a substrate.

[0002]

2. Description of the Related Art Conventionally, as this type of chip composite electronic component (hereinafter referred to as "CR chip type composite component"), for example, a structure shown in FIG. 2 is known.

As shown in FIG. 2A, the conventional CR chip type composite component 21 shown in FIG. 2 has a pair of electrodes 23 and 24 formed on an insulating substrate 22 so as to be spaced apart from each other. Figure 2
As shown in (b), a dielectric 25 is formed by printing over the substrate 22 between the electrodes 23, 24 separated from the upper surface of the one electrode 23. Further, as shown in FIG. 2C, an intermediate electrode 26 is formed on the upper surface of the dielectric 25 so as to cover an area having a predetermined capacitor capacitance value. As shown in FIG. 2D, the intermediate electrode 26 is formed. Is covered with a first protective film 27 made of, for example, glass and has an insulating property so as to cover a part of the dielectric 25 and to expose the dielectric 25. Then, as shown in FIG. 2E, a resistance film 28 is formed on the upper surface of the intermediate electrode 26 which is exposed without being covered with the first protective film 27, and as shown in FIG. The upper electrode 29 is formed across the resistance film 28 and the other electrode 24, and
As shown in (g), a part of the pair of electrodes 23, 24 is exposed to expose the dielectric 25, the intermediate electrode 26, the resistive film 28, and the upper electrode 29.
An insulating second protective film 30 made of, for example, synthetic resin is formed so as to cover the above.

[0004]

However, the conventional CR chip type composite part 21 shown in FIG.
Is formed on the upper surface of the intermediate electrode 26, and the resistance film 28 and the other electrode 24 are connected by the upper electrode 29.Therefore, the range in which the resistance film 28 can be formed is limited, and a large resistance value can be obtained. There is no problem.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a chip composite electronic component in which a resistance value can be set in a large range.

[0006]

A chip composite electronic component according to claim 1 is an insulating chip base, a pair of electrodes formed separately on the chip base, and one of the pair of electrodes. Formed on the upper surface of the dielectric, an upper electrode provided on the upper surface of the dielectric, and an insulating first protective film provided by exposing a part of the upper electrode and covering the dielectric. And a resistance film formed between the upper electrode and the other electrode, and an insulating property that exposes a part of each of the pair of electrodes and covers the surrounding portion, the dielectric, and the upper electrode. A second protective film, a dielectric is formed on the upper surface of one of the pair of electrodes, an upper electrode is formed on the upper surface of the dielectric, and a part of the upper electrode is exposed to expose the dielectric. To form an insulating first protective film to cover the upper electrode and To form the inter-electrode to the resistance film of square, resistive film becomes a state of being coated on the upper surface of the first protective film, caught long distance from the upper electrode to the other electrode,
The resistance value of the resistance film can be increased, and the resistance value setting range can be widened.

A chip composite electronic component according to a second aspect is the chip composite electronic component according to the first aspect, in which the upper electrode is provided on the upper surface of the dielectric so as to cover an area having a predetermined capacitance value. An upper electrode and a second upper electrode provided on the upper surface of the first upper electrode are provided, and the first protective film is
The second upper electrode is exposed to cover the dielectric and the first upper electrode, and the first upper electrode is formed in an area having a predetermined capacitance value on the upper surface of the dielectric. First
Forming a second upper electrode on the upper surface of the upper electrode of the first electrode, exposing the second upper electrode, and covering the dielectric and the first upper electrode to form the first protective film, a predetermined capacitance of the dielectric is formed. The value can be secured, and by forming the second upper electrode with a minimum area, the upper electrode can be reduced in size, the size and weight can be easily reduced, and the cost can be reduced.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of an embodiment of a chip composite electronic component of the present invention will be described below with reference to the drawings.

In FIG. 1 (g), reference numeral 1 denotes a CR chip type composite component which is a chip composite electronic component. The CR chip type composite component 1 is formed of, for example, an alumina sintered body into a substantially rectangular parallelepiped flat plate shape. It has a chip base 2 having electrical insulation. Then, on the upper surface of the chip substrate 2, a pair of opposing edges are located and separated from each other by, for example, a silver (Ag) -platinum (Pt) -based or silver (Ag) -palladium (Pd) -based conductive paste. A pair of first electrode 3 and second electrode 4
Are formed respectively.

On the upper surface of the first electrode 3 having a large area, a perovskite-type lead-based complex oxide is provided over the chip substrate 2 between the first electrode 3 and the second electrode 4 which are separated from each other. A dielectric material 6 made of a ferroelectric material formed of a contained paste or the like is formed by coating.

Furthermore, on the upper surface of the dielectric 6, for example, a silver (Ag) -platinum (Pt) system or a silver (Ag) -palladium (Pd) system made of the same material as the first electrode 3 and the second electrode 4 is used. The first upper electrode 7 is formed to cover a predetermined area with the conductive paste. That is, the capacitance of the capacitor is C = ε ₀ ε _r S / d C: capacitance of the capacitor ε ₀ : dielectric constant in vacuum ε _r : relative permittivity S: coating area of the dielectric d: film thickness of the dielectric Since the capacitor capacitance C is proportional to the coating area of the dielectric body 6, the desired capacitor capacitance is set by coating the first upper electrode 7 with a predetermined area.

On the upper surface of the first upper electrode 7,
The same material as that of the first electrode 3, the second electrode 4 and the first upper electrode 7, for example, silver (Ag) -platinum (Pt) system or silver (A).
g) -Palladium (Pd) -based conductive paste covers and forms the second upper electrode 8, and the first upper electrode 7 and the second upper electrode 8 form the upper electrode 9.

Then, the second upper electrode 8 is exposed and the dielectric 6 and the first upper electrode 7 are covered to cover the dielectric 6 and the first upper electrode 7.
The protective film 10 is formed by coating.

On the exposed upper surface of the second upper electrode 8, the main component is, for example, ruthenium oxide (RuO ₂ ) from the upper surface of the first protective film 10 to the upper surface of the second upper electrode 8. The resistance film 11 is formed by coating with a ruthenium-based paste or the like. The resistance value of the resistance film 11 is represented by R = ρl / S R: resistance value ρ: specific resistance l: length dimension of the resistance film 11 S: cross-sectional area of the resistance film 11, and the resistance value R is a long value Proportional to l.

Then, the edge portions which are a part of the pair of the first electrode 3 and the second electrode 4 are exposed to expose the dielectric 6, the first upper electrode 7, the second upper electrode 8 and the resistor. A second protective film 12 is formed by covering the film 11 with a synthetic resin such as an epoxy resin or a polyimide resin to form the CR chip type composite component 1.

Next, the manufacturing operation of the CR chip type composite component 1 will be described with reference to the drawings.

An electrically insulating substrate made of an alumina sintered body (not shown) is linear on the surface and is approximately V-shaped in the depth direction so as to be divided in advance for each chip substrate 2 shown in FIG. 1 (a). -Shaped dividing grooves are formed vertically and horizontally.

Then, as shown in FIG. 1A, for each unit piece partitioned by a dividing groove for each chip base 2 on the front surface, at the longitudinal end portions of each chip base 2 in the longitudinal direction. For example, silver (Ag) -platinum (Pt) -based or silver (Ag)-is so arranged as to face each other while being offset from the center to one end side.
Palladium (Pd) -based conductive paste is, for example, 10 μm
Print with a film thickness of ~ 12 μm, for example, about 10 at about 850 ° C.
After firing for a minute, the first electrode 3 and the second electrode 4 are formed facing each other for each chip substrate 2.

Next, as shown in FIG. 1 (b), for example, a perovskite-type lead-based composite is formed on the upper surface of the first electrode 3 of each unit piece vertically and horizontally divided by a dividing groove on the surface of the chip substrate 2. A ferroelectric paste containing an oxide and an organic vehicle is printed at a film thickness of about 35 μm to 40 μm, and is printed at 850 ° C. for 1 hour.
By firing for 0 minutes, the ferroelectric dielectric 6 is formed on the upper surface of the first electrode 3.

Then, on the upper surface of this dielectric body 6, as shown in FIG.
As shown in (c), the first electrode 3 and the second electrode 4
Same material as silver (Ag) -platinum (Pt) system or silver (A
g) -palladium (Pd) -based conductive paste, for example, 1
The first upper electrode 7 is formed for each chip base 2 by printing in an area where a predetermined capacitor capacity is obtained with a film thickness of 0 μm to 12 μm and baking at, for example, about 850 ° C. for about 10 minutes.

Further, on the upper surface of the first upper electrode 7,
FIG. 1 (d) A conductive paste of the same material, for example, silver (Ag) -platinum (Pt) or silver (Ag) -palladium (Pd), is printed with a film thickness of 20 μm, for example, at about 850 ° C. for about 10 By firing for a minute, the second upper electrode 8 is formed for each chip substrate 2.

Then, as shown in FIG. 1E, the second upper electrode 8 is exposed, and the dielectric 6 and the first upper electrode 7 are exposed.
And a glass paste made of a glass frit such as lead silicate glass and an organic vehicle is printed at a thickness of about 20 μm and baked at, for example, about 850 ° C. for about 10 minutes to provide a first protective film 10 for each chip substrate 2. To form.

Next, as shown in FIG. 1F, on the exposed upper surface of the second upper electrode 8, for example, oxidation is performed from the upper surface of the first protective film 10 to the upper surface of the second upper electrode 8. A ruthenium-based conductive paste containing ruthenium (RuO ₂ ) as a main component is printed with a film thickness of about 30 μm to 40 μm, and for example, about 8 μm.
By firing at 50 ° C. for about 10 minutes, the resistance film 11 is formed for each chip substrate 2.

Then, as shown in FIG. 1 (g), a pair of the first electrode 3 and the second electrode 3 which are the edge portions of each unit piece.
Part of the electrode 4 is exposed, the dielectric 6, the first upper electrode 7, the second upper electrode 8 and the resistance film 11 are covered, and a synthetic resin such as an epoxy or polyimide resin is printed. By heating at 30 ° C. for about 30 minutes, the second protective film 12 is coated and formed on each chip substrate 2.

After that, the substrate is divided from the dividing grooves to form the CR chip type composite component 1.

According to the above embodiment, the upper electrode 9 is formed on the upper surface of the dielectric 6 formed on the upper surface of the one first electrode 3, and a part of the upper electrode 9 is exposed to expose the dielectric 6. To form an insulating first protective film 10 and to form a resistance film 11 between the upper electrode 9 and the other second electrode 4 over the upper surface of the first protective film 10. The length of the resistance film 11 can be made longer than that of the one, and the resistance value of the resistance film 11 can be increased, and the resistance value can be set from an extremely low resistance value similar to the electrode to a large resistance value depending on the laminated state and material settings. The resistance value can be set in a large range.

Further, since the upper electrode 9 has a two-layer structure of the first upper electrode 7 and the second upper electrode 8, the first upper electrode 7 is formed in an area that provides a predetermined capacitor capacity, and the second upper electrode 7 is formed. The upper electrode 8 has only a required area, that is, an area smaller than that of the first upper electrode 7 required to form a circuit configuration from the first electrode 3 to the second electrode 4 through the dielectric 6 and the resistance film 11. It is possible to easily set a large capacitor capacity, reduce the size of the upper electrode 9, easily reduce the size and weight, and reduce the cost.

Therefore, the CR chip type composite component 1 in which both the setting range of the capacitor capacity and the setting value of the resistance value can be easily set can be easily reduced in size and weight, and can be provided at low cost.

In the above embodiment, a plurality of electrodes may be provided or a plurality of dielectrics 6 and resistive films 11 may be formed in a laminated manner, if necessary.

Further, the first electrode 3 and the second electrode 4 are provided over the end surface of the CR chip type composite component 1 and further over the back surface thereof.
Then, the first end electrode and the second end electrode, the first back surface electrode and the second back surface electrode are similarly printed with the same material as the first electrode 3 and the second electrode 4. You may form.

The dielectric 6 is not limited to the perovskite type lead-based composite oxide and may be formed of any dielectric material. Further, similarly, the first protective film 10 is made of glass and the second protective film 12 is made of synthetic resin.
It can be formed of any insulating material. Then, for the first electrode 3 and the second electrode 4 as well, silver (Ag)
-Platinum (Pt) -based or silver (Ag) -palladium (Pd) -based may be used, and may be formed of any conductive material, and each first electrode 3, second electrode 4, dielectric 6, upper electrode 9, resistance film 11, first protective film 10 and second protective film
12 is not limited to print formation such as vapor deposition.

[0032]

According to the chip composite electronic component of the first aspect, the upper electrode is formed on the upper surface of the dielectric formed on the upper surface of one of the pair of electrodes, and a part of the upper electrode is exposed to expose the dielectric. To form an insulative first protective film and form a resistance film between the upper electrode and the other electrode, so that the resistance film covers the upper surface of the first protective film, and The distance to the electrode can be made long, the resistance value of the resistance film can be easily increased, and the setting range of the resistance value can be made large.

According to the chip composite electronic component of the second aspect, in addition to the chip composite electronic component of the first aspect, the first upper electrode is formed on the upper surface of the dielectric with an area having a predetermined capacitance value, A second upper electrode is formed on the upper surface of the first upper electrode, and the second upper electrode is exposed to cover the dielectric and the first upper electrode to form a first protective film. The predetermined capacitance value can be ensured in a large setting range, and by forming the second upper electrode with a minimum area, the upper electrode can be reduced in size, the size and weight can be easily reduced, and the cost can be reduced.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a manufacturing process of an embodiment of a chip composite electronic component of the present invention.

FIG. 2 is an explanatory view showing a manufacturing process of a conventional chip composite electronic component.

[Explanation of symbols]

 1 CR chip type composite part which is a chip composite electronic part 2 Chip base 3 First electrode 4 Second electrode 6 Dielectric 7 First upper electrode 8 Second upper electrode 9 Upper electrode 10 First protective film 11 Resistive film 12 Second protective film

Claims (2)

[Claims] 1. An insulative chip base, a pair of electrodes formed on the chip base separately from each other, a dielectric formed on one upper surface of the pair of electrodes, and an upper surface of the dielectric. Formed between the upper electrode and the other electrode, an upper electrode provided on the upper electrode, an insulating first protective film that exposes a part of the upper electrode and covers the dielectric. A resistive film and an insulating second protective film that exposes a part of each of the pair of electrodes and covers the surrounding portion, the dielectric, and the upper electrode. Chip composite electronic component. 2. The upper electrode comprises a first upper electrode provided on an upper surface of a dielectric material so as to cover an area having a predetermined capacitance value, and a second upper electrode provided on an upper surface of the first upper electrode. The chip composite electronic component according to claim 1, wherein the first protective film is provided so as to expose the second upper electrode and cover the dielectric and the first upper electrode.