JPH0927650A - Surface light emitting laser and manufacture thereof - Google Patents
Surface light emitting laser and manufacture thereofInfo
- Publication number
- JPH0927650A JPH0927650A JP17380195A JP17380195A JPH0927650A JP H0927650 A JPH0927650 A JP H0927650A JP 17380195 A JP17380195 A JP 17380195A JP 17380195 A JP17380195 A JP 17380195A JP H0927650 A JPH0927650 A JP H0927650A
- Authority
- JP
- Japan
- Prior art keywords
- emitting laser
- layer
- surface emitting
- growth layer
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は面発光レーザ及びそ
の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting laser and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、面発光レーザはエッチング、埋め
込み成長、イオン注入法、ＡｌＧａＡｓ水蒸気酸化法に
より電子の注入領域を形成していた。エッチングによっ
て作製される面発光レーザは段差が大きく電極配線等の
プロセスが難しい問題点があった。イオン注入法により
素子分離して作製される面発光レーザは、平坦な表面を
有しプロセスが容易である反面、屈折率導波構造を有し
ていないため光出力時に横モードが多モード化しやすく
動作が不安定であるなどの問題点があった。また、埋め
込み法による面発光レーザは平坦な表面をもつ屈折率導
波構造であるが、エッチングした後に半導体層を再成長
するため界面不純物による素子特性のばらつきや、また
再成長に時間がかかる等の欠点があった。2. Description of the Related Art Conventionally, in a surface emitting laser, an electron injection region is formed by etching, buried growth, an ion injection method, and AlGaAs steam oxidation method. The surface-emitting laser manufactured by etching has a large step, and there is a problem that the process of electrode wiring is difficult. The surface-emitting laser manufactured by element isolation by the ion implantation method has a flat surface and is easy to process, while it does not have a refractive index waveguide structure, so that the transverse mode easily becomes multimode at the time of optical output. There were problems such as unstable operation. Further, the surface emitting laser by the embedding method has a refractive index waveguide structure having a flat surface, but since the semiconductor layer is regrown after etching, variations in device characteristics due to interface impurities, and re-growth takes a long time, etc. There was a drawback.
【０００３】近年、４００℃付近でのＨ2ＯによるＡｌ
ＧａＡｓ膜の酸化を用いた技術が、屈折率が半導体より
も４７％程小さく電気的に絶縁性である均一な多結晶が
得られるため、電子の注入領域の形成のみならず光学的
特徴においても有望視されている。このような技術の対
応としてエッチングにより素子分離した面発光レーザを
水蒸気酸化することにより屈折率導波構造を形成する方
法と、上面の半導体多層膜反射鏡（ＤＢＲ）の構成部の
Ａｌ組成の高い層をエッチング後に選択的に水蒸気酸化
することにより反射鏡を作製する方法が報告されてい
る。前者では、単にエッチングを行った素子に比べて表
面再結合電流を小さくすることが可能であり、さらに導
波路構造であるため、しきい値電流が低い面発光レーザ
が得られている。後者では、３ペアのＤＢＲで９９％以
上の高反射率が得られ、成長時間が短時間で行えること
などの長所を有している。しかしながら、これらの作製
はエッチングのみによる電流注入型と同じであるため、
段差の影響により作製プロセスが複雑であることに変わ
りはない。Recently, Al by H 2 O at around 400 ° C.
Since the technique using the oxidation of the GaAs film can obtain a uniform polycrystal whose refractive index is 47% smaller than that of the semiconductor and which is electrically insulating, not only in the formation of the electron injection region but also in the optical characteristics. Promising. As a countermeasure for such a technique, a method of forming a refractive index waveguide structure by steam-oxidizing a surface emitting laser element-isolated by etching, and a high Al composition of a constituent portion of a semiconductor multilayer film reflecting mirror (DBR) on the upper surface. A method of making a reflector by etching the layer after selective steam oxidation has been reported. In the former case, the surface recombination current can be made smaller than that of the element simply etched, and the surface emitting laser having a low threshold current is obtained because of the waveguide structure. The latter has the advantage that a high reflectance of 99% or more can be obtained with 3 pairs of DBRs and the growth time can be shortened. However, since these fabrications are the same as the current injection type by etching only,
The manufacturing process remains complicated due to the influence of the step.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、エッチング
することなく平坦な表面を有し、素子特性のばらつきの
少ない屈折率導波型の面発光レーザをの作製する。さら
に、加えてＡｌを含むＤＢＲのＡｌ組成の高い層まで選
択的に酸化あるいは窒素化を進行させることにより、Ｄ
ＢＲの層数の少ない、つまり成長時間の短縮された面発
光レーザを作製する。DISCLOSURE OF THE INVENTION The present invention produces a surface emitting laser of a refractive index guided type which has a flat surface without etching and has a small variation in device characteristics. Furthermore, by selectively advancing oxidation or nitridation to a layer having a high Al composition of DBR containing Al, D
A surface emitting laser having a small number of BR layers, that is, a shortened growth time is manufactured.
【０００５】[0005]
【課題を解決するための手段】本発明の請求項１では、
成長層に形成された欠陥を通しＨ2ＯあるいはＮＨ3等の
Ｏ又はＮを含む分子を導入して成長層深く酸化層又は窒
化層を形成してなる。According to claim 1 of the present invention,
Molecules containing O or N such as H 2 O or NH 3 are introduced through the defects formed in the growth layer to form an oxide layer or a nitride layer deep in the growth layer.
【０００６】また請求項２では、面発光レーザの作製に
おける、結晶成長の後、素子周辺に加速されたイオンを
注入し成長層深く欠陥を形成する工程と、その後Ｈ
2Ｏ、ＮＨ3等のＯ又はＮを含む分子を導入し成長層深く
酸化あるいは窒化工程とを有する。また請求項３では、
請求項２において更に酸化又は窒化を進行させてＡｌ組
成の高い成長層を選択的に酸化又は窒化し反射鏡等を形
成する工程を含む。According to a second aspect of the present invention, in the fabrication of the surface emitting laser, after the crystal growth, a step of implanting accelerated ions in the periphery of the element to form a defect deep in the growth layer, and then H
A process of introducing a molecule containing O or N such as 2 O or NH 3 and deeply oxidizing or nitriding the growth layer is included. Further, in claim 3,
The method according to claim 2 further includes a step of further oxidizing or nitriding to selectively oxidize or nitride the growth layer having a high Al composition to form a reflecting mirror or the like.
【０００７】本発明によれば、エッチングをすることの
ないため、平坦な表面を有し、かつ素子特性のばらつき
の少ない面発光レーザが作製可能となり、さらに、酸化
物又は窒化物と半導体の屈折差を利用した屈折率導波型
の面発光レーザの作製が可能となる。また、Ａｌを含む
半導体層をさらに横方向に選択的に坂又は窒素化するこ
とにより、酸化層又は窒化層をＤＢＲの構成層の一部に
利用することが可能である。その結果、面発光レーザの
成長時間を従来の構造よりも短時間で行える長所がもた
らされる。According to the present invention, since no surface etching is performed, a surface emitting laser having a flat surface and less variation in device characteristics can be manufactured, and further refraction of an oxide or a nitride and a semiconductor is possible. It becomes possible to fabricate a surface emitting laser of the refractive index guided type utilizing the difference. Further, the oxide layer or the nitride layer can be used as a part of the constituent layer of the DBR by selectively laterally hilling or nitrogenizing the semiconductor layer containing Al. As a result, there is an advantage that the surface emitting laser can be grown in a shorter time than the conventional structure.
【０００８】[0008]
【発明の実施の形態】図１は本発明の第一の実施の形態
を説明する図である。本実施の形態はＧａＡｓ基板１を
用い、λ＝０．８５μｍの発振波長に対して光学長λ／
４のｎ型Ａｌ0.15Ｇａ0.85Ａｓ層と同じく光学長λ／４
のｎ型ＡｌＡｓ層をペアとする繰り返し多層膜からなる
第一の反射層２、６層のＧａＡｓ量子井戸とＡｌ0.2Ｇ
ａ0.8Ａｓ障壁層からなる活性層を含む光学波長ｍλの
スペーサ層３、光学長λ／４のｐ型Ａｌ0.15Ｇａ0.85Ａ
ｓ層と同じく光学長λ／４のｐ型ＡｌＡｓ層をペアとす
る繰り返し多層膜からなる第二の反射層４を成長する。
素子径１０μｍ、間隔が２５０μｍとなるようにＳｉＯ
2層上にレジストを重ねたマスクを面発光レーザ上に形
成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram for explaining a first embodiment of the present invention. In this embodiment, a GaAs substrate 1 is used, and an optical length λ / is set for an oscillation wavelength of λ = 0.85 μm.
The same optical length λ / 4 as the n-type Al 0.15 Ga 0.85 As layer of 4
First n-type AlAs layer pair consisting of repeating multi-layered films 2 and 6 GaAs quantum wells and Al 0.2 G
a spacer layer 3 having an optical wavelength mλ including an active layer composed of a 0.8 As barrier layer, p-type Al 0.15 Ga 0.85 A having an optical length λ / 4
Similarly to the s layer, the second reflective layer 4 is grown, which is a repetitive multi-layer film in which a p-type AlAs layer having an optical length of λ / 4 is paired.
The element diameter is 10 μm and the interval is 250 μm.
A mask with two layers of resist is formed on the surface emitting laser.
【０００９】引き続き、加速電圧５０ｋｅＶかつドーズ
２×１０15ｃｍ-3（１回目）、加速電圧２００ｋｅＶか
つドーズ２×１０15ｃｍ-3（２回目）、加速電圧４００
ｋｅＶかつドーズ２×１０15ｃｍ-3（３回目）の条件で
合計３回水素イオン注入を行いイオン注入領域５を形成
する。Subsequently, an acceleration voltage of 50 keV and a dose of 2 × 10 15 cm -3 (first time), an acceleration voltage of 200 keV and a dose of 2 × 10 15 cm -3 (second time), an acceleration voltage of 400
Hydrogen ion implantation is performed a total of three times under the conditions of keV and a dose of 2 × 10 15 cm −3 (third time) to form an ion implantation region 5.
【００１０】その後レジスト層をアセトン、ＳｉＯ2層
を希釈弗酸等で除去し、窒素雰囲気中水蒸気を４００℃
３０分吹き付けることによりイオン注入により形成した
欠陥領域５の酸化を行う。After that, the resist layer is removed with acetone and the SiO 2 layer is removed with diluted hydrofluoric acid or the like, and steam at 400 ° C. is used in a nitrogen atmosphere.
The defect region 5 formed by ion implantation is oxidized by spraying for 30 minutes.
【００１１】その後、ＳｉＯ2層６を形成し、光出力部
分を希釈弗酸で除去した後、ｐ電極７としてＡｕＺｎＮ
ｉ、ｎ電極８としてＡｕＧｅＮｉを形成する。After that, a SiO 2 layer 6 is formed, the light output portion is removed by diluted hydrofluoric acid, and AuZnN is used as the p electrode 7.
AuGeNi is formed as the i and n electrodes 8.
【００１２】このようにして作製された面発光レーザの
チップの特性を調べた。面発光レーザに対して電流を注
入し、Ｉ−Ｌ特性を調べた。しきい値電流１０μＡにお
いて、Ｉ−Ｌ曲線は立ち上がり、０．８５μｍの発振波
長でレーザ発振を確認した。横モードは光出力が２ｍＷ
までシングルモードであることを確認した。The characteristics of the surface emitting laser chip thus manufactured were examined. A current was injected into the surface emitting laser and the IL characteristics were examined. When the threshold current was 10 μA, the IL curve rose, and laser oscillation was confirmed at an oscillation wavelength of 0.85 μm. Transverse mode has an optical output of 2 mW
I confirmed that it was in single mode.
【００１３】図２は、本発明の第二の実施形態を説明す
る図で、(a)は断面図、(b)平面図である。本実施形態は
ｎ型ＧａＡｓ基板２１を用い、λ＝０．８５μｍの発振
波長に対して光学長λ／４のｎ−Ａｌ0.15Ｇａ0.85Ａｓ
層と同じく光学長λ／４のＡｌＡｓ層の５ペアの層から
なる第一の反射層２２、ＧａＡｓ量子井戸６層とＡｌ
0.2Ｇａ0.8Ａｓ障壁層からなる活性層を含む光学波長ｍ
λ／４のスペーサ層２３、Ａｌ0.95Ｇａ0.05Ａｓ電流狭
窄層２４、光学長λ／４のｐ−Ａｌ0.15Ｇａ0.85Ａｓ層
と同じく光学長λ／４のＡｌ0.9Ｇａ0.1Ａｓ層の２２ペ
アからなる第二の反射層２５を成長する。2A and 2B are views for explaining the second embodiment of the present invention. FIG. 2A is a sectional view and FIG. 2B is a plan view. In this embodiment, an n-type GaAs substrate 21 is used, and n-Al 0.15 Ga 0.85 As having an optical length of λ / 4 is used for an oscillation wavelength of λ = 0.85 μm.
The first reflective layer 22, which is composed of 5 pairs of AlAs layers each having an optical length of λ / 4, and 6 layers of GaAs quantum wells and Al.
Optical wavelength m including active layer consisting of 0.2 Ga 0.8 As barrier layer
From a pair of λ / 4 spacer layer 23, Al 0.95 Ga 0.05 As current confinement layer 24, and p-Al 0.15 Ga 0.85 As layer with optical length λ / 4, and 22 pairs of Al 0.9 Ga 0.1 As layer with optical length λ / 4. The second reflective layer 25 is grown.
【００１４】３００×１５００μｍ2のバー状のイオン
注入部をＳｉＯ2層上に重ねたレジストよりなるマスク
により形成し、引き続き、加速電圧１００ｋｅＶ、ドー
ズ１×１０16ｃｍ-3、加速電圧３００ｋｅＶ、ドーズ１
×１０16ｃｍ-3、加速電圧７００ｋｅＶ、ドーズ１×１
０16ｃｍ-3で３回Ｈ+イオン注入を行いイオン注入領域
２６を形成する。アセトンでレジストを剥離後同様に素
子径１０μｍ、間隔が２５０μｍとなるようにＳｉＯ2
層上に重ねたレジストよりなるマスクを面発光レーザ上
に形成し加速電圧５０ｋｅＶ、ドーズ２×１０15ｃ
ｍ-3、加速電圧２００ｋｅＶ、ドーズ２×１０15ｃ
ｍ-3、加速電圧４００ｋｅＶ、ドーズ２×１０15ｃｍ-3
で３回Ｈ+イオン注入を行いイオン注入領域２７を面発
光レーザ周辺に形成する。A 300 × 1500 μm 2 bar-shaped ion-implanted portion is formed by a mask made of a resist layered on the SiO 2 layer, and subsequently an accelerating voltage of 100 keV, a dose of 1 × 10 16 cm -3 , an accelerating voltage of 300 keV, and a dose. 1
× 10 16 cm -3 , acceleration voltage 700 keV, dose 1 × 1
The ion implantation region 26 is formed by performing H + ion implantation three times at 0 16 cm −3 . After removing the resist with acetone, the element diameter was set to 10 μm and the interval was set to 250 μm in the same manner as SiO 2
A mask made of a resist layered on the layer is formed on the surface emitting laser, the acceleration voltage is 50 keV, and the dose is 2 × 10 15 c.
m −3 , acceleration voltage 200 keV, dose 2 × 10 15 c
m -3 , acceleration voltage 400 keV, dose 2 × 10 15 cm -3
Then, H + ion implantation is performed three times to form an ion implantation region 27 around the surface emitting laser.
【００１５】その後、レジストをアセトン、ＳｉＯ2膜
を弗酸等で除去し、窒素雰囲気中水蒸気を４００℃２時
間吹き付けることによりイオン注入領域及び反射鏡の一
部の酸化２８を行う。Ａｌ組成の最も多い下側ＤＢＲ２
２中のＡｌＡｓ層は６００μｍと広い領域に横方向に酸
化が進行し酸化膜と半導体からなる反射鏡が面発光レー
ザ素子下部に形成される。次にＡｌ組成の多い上側ＤＢ
Ｒ２５中のＡｌ0.9Ｇａ0.1Ａｓ層は１μｍ横方向に酸化
され屈折率導波構造が形成される。After that, the resist is removed with acetone and the SiO 2 film is removed with hydrofluoric acid or the like, and steam is blown in a nitrogen atmosphere at 400 ° C. for 2 hours to oxidize 28 part of the ion implantation region and the reflecting mirror. Lower DBR2 with most Al composition
The AlAs layer in No. 2 has a wide area of 600 μm and is laterally oxidized to form a reflecting mirror made of an oxide film and a semiconductor under the surface emitting laser element. Next, the upper DB with a large Al composition
The Al 0.9 Ga 0.1 As layer in R25 is laterally oxidized by 1 μm to form a refractive index waveguide structure.
【００１６】その後、ＳｉＯ2コート２９を形成し、光
出力部分を希釈弗酸で除去した後、ｐ電極３０としてＡ
ｕＺｎＮｉ、ｎ電極３１としてＡｕＧｅＮｉを形成す
る。After that, a SiO 2 coat 29 is formed, and the light output portion is removed by dilute hydrofluoric acid, and then A is used as the p electrode 30.
AuZnNi and AuGeNi are formed as the n-electrode 31.
【００１７】面発光レーザは電圧を加えると電流方向
（二点鎖線方向）に沿って電流が注入され、光出力が得
られる。When a voltage is applied to the surface emitting laser, a current is injected along the current direction (the direction of the chain double-dashed line), and an optical output is obtained.
【００１８】このようにして作製された面発光レーザの
チップの特性を調べた。面発光レーザに対して電流を注
入し、Ｉ−Ｌ特性を調べた。実施形態１と同様にしきい
値電流１２μＡにおいて、Ｉ−Ｌ曲線は立ち上がり、
０．８５μｍの発振波長でレーザー発振を確認した。横
モードは光出力が５ｍＷまでシングルモードであること
を確認した。また、酸化の過程を４５０℃４時間の窒素
雰囲気中ＮＨ3による窒化に変えても同様なレーザー発
振を確認した。The characteristics of the surface emitting laser chip thus manufactured were examined. A current was injected into the surface emitting laser and the IL characteristics were examined. At the threshold current of 12 μA as in the first embodiment, the IL curve rises,
Laser oscillation was confirmed at an oscillation wavelength of 0.85 μm. In the transverse mode, it was confirmed that the light output was a single mode up to 5 mW. Further, similar laser oscillation was confirmed even when the oxidation process was changed to nitriding with NH 3 in a nitrogen atmosphere at 450 ° C. for 4 hours.
【００１９】[0019]
【発明の効果】以上説明したように、本発明によれば、
エッチングをすることない平坦な表面を有したばらつき
の少ない屈折率導波型の面発光レーザと、さらに成長時
間の比較的少ない面発光レーザの作製が可能である。As described above, according to the present invention,
It is possible to manufacture a refractive index guided surface emitting laser having a flat surface with no etching and a surface emitting laser having a relatively short growth time.
【００２０】[0020]
【００２１】[0021]
【図１】本発明の実施形態１の説明図FIG. 1 is an explanatory diagram of a first embodiment of the present invention.
【００２２】[0022]
【図２】本発明の実施形態２の説明図FIG. 2 is an explanatory diagram of Embodiment 2 of the present invention.
【００２３】[0023]
１…ｎ−ＧａＡｓ基板、２…ｎ−Ａｌ0.15Ｇａ0.85Ａｓ
層とｎ−ＡｌＡｓ層との繰り返し多層膜からなる第一の
反射層、３…活性層を含む光学波長ｍλ（λは発振波
長）のスペーサ層、４…ｐ−Ａｌ0.15Ｇａ0.85Ａｓ層と
ｐ−ＡｌＡｓ層との繰り返し多層膜からなる第二の反射
層、５…イオン注入領域、６…ＳｉＯ2コート。1 ... n-GaAs substrate, 2 ... n-Al 0.15 Ga 0.85 As
First reflective layer composed of a repeating multilayer film of a layer and an n-AlAs layer, a spacer layer having an optical wavelength mλ (λ is an oscillation wavelength) including an active layer, a p-Al 0.15 Ga 0.85 As layer and a p-Al 0.15 Ga 0.85 As layer A second reflective layer consisting of a repeating multilayer film with an AlAs layer, 5 ... ion-implanted region, 6 ... SiO 2 coat.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 若月 温 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 (72)発明者 小濱 剛孝 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 (72)発明者 黒川 隆志 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Wakatsuki, 1-1, 6 Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation (72) Inventor, Taketaka Obama 1-1-1, Uchisaiwaicho, Chiyoda-ku, Tokyo No. 6 Nihon Telegraph and Telephone Corporation (72) Inventor Takashi Kurokawa 1-1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation
Claims (3)
Ｈ2Ｏ、ＮＨ3等のＯ又はＮを含む分子を導入して成長層
に形成された酸化部又は窒化部とを有する、 ことを特徴とする面発光レーザ。1. A growth layer having a defect and an oxidation part or a nitriding part formed in the growth layer by introducing a molecule containing O or N such as H 2 O or NH 3 through the defect. A surface-emitting laser characterized by the following.
後、 素子周辺に加速されたイオンを注入し成長層深く欠陥を
形成する工程と、 その後Ｈ2Ｏ、ＮＨ3等のＯ又はＮを含む分子を導入し成
長層深く酸化又は窒化する工程とを有する、 ことを特徴とする面発光レーザの製造方法。2. A step of injecting accelerated ions into the periphery of an element to form a defect deep in the growth layer after crystal growth in the fabrication of a surface emitting laser, and then adding O or N such as H 2 O or NH 3 to the growth layer. A method of manufacturing a surface emitting laser, comprising the step of introducing a molecule containing the compound and oxidizing or nitriding deeply in the growth layer.
高い成長層を選択的に酸化又は窒化し反射鏡等を形成す
る工程を含むことを特徴とする請求項２記載の面発光レ
ーザの製造方法。3. The surface emitting laser according to claim 2, further comprising a step of further oxidizing or nitriding to selectively oxidize or nitride the growth layer having a high Al composition to form a reflecting mirror or the like. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17380195A JPH0927650A (en) | 1995-07-10 | 1995-07-10 | Surface light emitting laser and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17380195A JPH0927650A (en) | 1995-07-10 | 1995-07-10 | Surface light emitting laser and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0927650A true JPH0927650A (en) | 1997-01-28 |
Family
ID=15967416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17380195A Pending JPH0927650A (en) | 1995-07-10 | 1995-07-10 | Surface light emitting laser and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0927650A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223975A (en) * | 1997-02-12 | 1998-08-21 | Fuji Xerox Co Ltd | Surface emission type semiconductor laser device and its manufacture |
| WO1999018641A1 (en) * | 1997-10-08 | 1999-04-15 | Seiko Epson Corporation | Surface light emitting laser and method of production thereof |
| JP2002289967A (en) * | 2001-03-28 | 2002-10-04 | Rohm Co Ltd | Surface emitting type semiconductor laser and its manufacturing method |
| JP2005183912A (en) * | 2003-11-27 | 2005-07-07 | Ricoh Co Ltd | Surface-emitting laser element, surface-emitting laser array, optical interconnection system, optical communication system, electrophotography system, and optical disc system |
| JP2007053406A (en) * | 1997-03-06 | 2007-03-01 | Finisar Corp | Laser having selectively variable electric current closing layer |
| WO2017018017A1 (en) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | Light emitting element |
-
1995
- 1995-07-10 JP JP17380195A patent/JPH0927650A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223975A (en) * | 1997-02-12 | 1998-08-21 | Fuji Xerox Co Ltd | Surface emission type semiconductor laser device and its manufacture |
| JP2007053406A (en) * | 1997-03-06 | 2007-03-01 | Finisar Corp | Laser having selectively variable electric current closing layer |
| JP4700593B2 (en) * | 1997-03-06 | 2011-06-15 | フィニサー コーポレイション | Laser with a selectively confined current confinement layer |
| WO1999018641A1 (en) * | 1997-10-08 | 1999-04-15 | Seiko Epson Corporation | Surface light emitting laser and method of production thereof |
| US6594296B1 (en) | 1997-10-08 | 2003-07-15 | Seiko Epson Corporation | Surface-emitting laser and method of fabrication thereof |
| JP2002289967A (en) * | 2001-03-28 | 2002-10-04 | Rohm Co Ltd | Surface emitting type semiconductor laser and its manufacturing method |
| JP2005183912A (en) * | 2003-11-27 | 2005-07-07 | Ricoh Co Ltd | Surface-emitting laser element, surface-emitting laser array, optical interconnection system, optical communication system, electrophotography system, and optical disc system |
| WO2017018017A1 (en) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | Light emitting element |
| CN107851967A (en) * | 2015-07-28 | 2018-03-27 | 索尼公司 | Light-emitting component |
| JPWO2017018017A1 (en) * | 2015-07-28 | 2018-05-17 | ソニー株式会社 | Light emitting element |
| CN107851967B (en) * | 2015-07-28 | 2020-03-03 | 索尼公司 | Light emitting element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5034958A (en) | Front-surface emitting diode laser | |
| KR100623406B1 (en) | Vertical cavity surface emitting laser | |
| JP4184769B2 (en) | Surface emitting semiconductor laser and manufacturing method thereof | |
| US7387906B2 (en) | Multi-wavelength surface emitting laser and method for manufacturing the same | |
| JP4141172B2 (en) | Surface emitting semiconductor laser device manufacturing method, surface emitting semiconductor laser device, and optical transmission system | |
| JPH0927650A (en) | Surface light emitting laser and manufacture thereof | |
| US6654396B1 (en) | Semiconductor laser device and method for fabricating thereof | |
| JP3924859B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JP2917971B2 (en) | Surface emitting laser | |
| US6671301B1 (en) | Semiconductor device and method for producing the same | |
| JP3147328B2 (en) | Surface emitting semiconductor laser manufacturing method | |
| JP2546150B2 (en) | Three-dimensional cavity surface emitting laser | |
| JPH11112086A (en) | Embedded type surface emitting laser and manufacture thereof | |
| JP2953450B2 (en) | Semiconductor laser manufacturing method and semiconductor laser | |
| KR100224883B1 (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| JPH05211372A (en) | Manufacture of semiconductor laser | |
| JP3440977B2 (en) | Surface emitting semiconductor laser and method of manufacturing the same | |
| JP2005085836A (en) | Surface luminescence semiconductor laser element and its manufacturing method | |
| KR100224882B1 (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| JP2000101189A (en) | Manufacture of semiconductor laser element | |
| JPH01186688A (en) | Semiconductor laser device | |
| JP2001257424A (en) | Vertical resonator surface light emitting element | |
| JPH04275478A (en) | Manufacture of surface light emitting semiconductor laser | |
| JP2004158664A (en) | Surface-luminescent semiconductor laser device and its manufacturing method | |
| JPH09260770A (en) | Plane emission laser |