JPH0927398A - Plasma treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the evenness of temperature of an upper electrode in a plasma treatment device. SOLUTION: An annular shim 43 having a high heat transfer coefficient is interposed between the upper surface of an upper electrode 41 and the lower surface of a cooling plate 32 arranged on the upper part of the upper electrode 41 to cool the upper electrode 41, and the position of this shim 43 is set between the peripheral part and center part of the upper electrode 41. Even when the upper electrode 41 is heated by a plasma, it is regularly cooled by the shim 43 without the center part being deflected down, and the in-plane temperature difference in the upper electrode 41 is consequently minimized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used when subjecting an object to be processed to various types of plasma processing including etching processing.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, for example, an etching apparatus has been used as an apparatus for forming a contact hole by etching an insulating film on the surface of a semiconductor wafer (hereinafter referred to as "wafer"). Among them, the so-called parallel plate type etching apparatus in which electrodes are arranged above and below the processing chamber is particularly used because it is suitable for processing a wafer having a relatively large diameter.

In this etching apparatus, an upper electrode and a lower electrode are arranged so as to face each other vertically in a processing chamber, and high-frequency power is supplied to at least one of these electrodes to generate plasma to generate the upper electrode. The processing gas introduced into the processing chamber from the side is dissociated, and the surface of the wafer is etched by the ions generated thereby.

In this case, since the upper electrode is heated by the generated plasma, it is usually necessary to cool the upper electrode by some means, but conventionally, as shown in FIG. 11, the upper electrode facing the lower electrode 101 is conventionally used. A cooling plate 103 is superposed on the electrode 102, and the bolt 10 is provided around the cooling plate 103.
4, the upper electrode 102 and the cooling plate 103 are fixed in a direction in which the surface contact therebetween is strengthened.

With the above structure, the heat of the upper electrode 102 is conducted to the cooling plate 103 and cooled by the upper electrode 102.
Therefore, the upper surface of the upper electrode 102, which is the contact surface, and the cooling plate 1
The bottom surface of No. 03 was formed flat and the contact area was increased. For protection from the plasma P, the bolt 104 is covered with a dielectric material 105 such as quartz.

[0006]

However, in spite of adopting such a configuration, the inventor has verified that the temperature of the central portion of the upper electrode 102 does not drop as much as the temperature of the peripheral portion. The temperature gradient shown in FIG. 12 was generated (in FIG. 12, E is an edge (peripheral part) and C is a center (center part)). This is because when the upper electrode 102 is heated by plasma, it thermally expands, while the peripheral portion is fixed, the center portion bends downward, and the cooling plate 1
It is considered that this is caused by poor contact with 03.

As described above, when the temperature gradient occurs, "unevenness" occurs in the plasma P, and as a result, the uniformity of etching in the wafer surface may be impaired. Further, as shown in FIG. 12, the temperature difference t between the central portion C and the peripheral portion E was extremely large.

The present invention has been made in view of the above points, and in a plasma processing apparatus configured to cool the upper electrode by a cooling member typified by the cooling plate as described above, the temperature gradient of the upper electrode is corrected. The purpose is to reduce the temperature difference and to make the treatment uniform.

[0009]

In order to achieve the above object, the plasma processing apparatus of claim 1 has an upper electrode and a lower electrode vertically opposed to each other in a processing chamber, and at least one of the upper electrode and the lower electrode is disposed. An apparatus configured to supply high-frequency power to one side to generate plasma in the processing chamber and perform processing on an object to be processed in the processing chamber, wherein a flat upper surface and a lower surface of the upper electrode are flat. In a plasma processing apparatus in which a cooling member is arranged in contact and the upper electrode and the cooling member are fixed to each other in the peripheral portion thereof, the upper electrode and the cooling member are cooled between the upper electrode and the cooling member inside the fixed portion. It is characterized in that a heat transfer member that comes into contact with both of the members is interposed.

In the plasma processing apparatus according to the first aspect of the present invention, since the heat transfer member that contacts both the upper electrode and the cooling member is interposed inside, that is, on the center side of the fixed portion between the upper electrode and the cooling member. At the heat transfer member, the upper electrode is correspondingly convex downward. The repulsive force that acts to restore upward acts on the upper electrode due to its inherent elasticity.

Therefore, even if the upper electrode is heated by the plasma and expands and tries to bend downward, the repulsive force cancels out the bending force, so that the upper electrode maintains the contact with the heat transfer member. Therefore, the heat of the upper electrode is conducted to the cooling member at the contact portion. As a result, the temperature gradient of the upper electrode, which has been high in the central portion and low in the peripheral portion, is alleviated and the temperature difference itself is reduced.

A plasma processing apparatus according to a second aspect is the plasma processing apparatus according to the first aspect, wherein the heat transfer member is annular, and a concentric annular groove is formed on a lower surface of the cooling member inside the fixed portion. The heat transfer member is delivered in contact with the annular groove, and the thickness of the heat transfer member is longer than the depth of the groove.

In the plasma processing apparatus according to the second aspect of the present invention, since the thickness of the heat transfer member is longer than the depth of the groove, the heat transfer member protrudes downward by the length. Therefore, the upper electrode has a convex shape downward at a portion corresponding to the protruding portion. After that, as in the case of claim 1, the repulsive force acting on the upper electrode and the bending force at the time of thermal expansion cancel each other, and the contact of the upper electrode with the cooling member is maintained at the protruding portion. Therefore, in this portion, the heat of the upper electrode is conducted to the cooling member, the temperature gradient of the upper electrode is corrected, and the temperature difference is alleviated. Further, not only the upper surface of the heat transfer member but also the side portions are in contact with the inner wall of the groove, so that the heat transfer efficiency is higher than that of the plasma processing apparatus according to the first aspect.

The plasma processing apparatus of claim 3 is the same as that of claim 1.
In the plasma processing apparatus, the heat transfer member has an annular shape, and the heat transfer member is formed integrally with the cooling member on the lower surface of the cooling member inside the fixed portion.

Therefore, in the plasma processing apparatus according to the present invention, since the heat transfer member forms a downwardly convex heat transfer portion on the lower surface of the cooling member, as in each of the plasma processing apparatuses, the convex portion is formed. Heat is transferred at the contacting portion, the temperature gradient of the upper electrode is corrected, and the temperature difference is also reduced. Further, since the heat transfer member is formed integrally with the cooling member, the number of members can be reduced as compared with each of the plasma processing apparatuses.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment in which the present invention is applied to an etching apparatus will be described with reference to the accompanying drawings. FIG. 1 schematically shows a cross section of an etching apparatus 1 according to the present embodiment. The processing chamber 2 in the etching apparatus 1 is formed in a cylindrical processing container 3 made of aluminum that has been subjected to anodized alumite treatment and can be hermetically closed. The processing container 3 itself is grounded, for example, via a ground wire 4. An insulating support plate 5 made of ceramic or the like is provided at the bottom of the processing chamber 2, and a substrate to be processed, for example, a semiconductor wafer having a diameter of 8 inches (hereinafter referred to as “wafer”) W is provided on the insulating support plate 5. A substantially cylindrical susceptor 6 that constitutes a lower electrode for mounting the
It is housed vertically.

The susceptor 6 is supported by an elevating shaft 7 which loosely penetrates the insulating support plate 5 and the bottom of the processing container 3, and the elevating shaft 7 is a drive motor 8 installed outside the processing container 3. It can move up and down freely. Therefore, by the operation of the drive motor 8, the susceptor 6 is
Can move up and down as shown by the reciprocating arrow in FIG. In order to ensure the airtightness of the processing chamber 2, a stretchable airtight member such as a bellows 9 is provided between the susceptor 6 and the insulating support plate 5 so as to surround the outside of the elevating shaft 7. There is.

The susceptor 6 is made of aluminum whose surface is subjected to an oxidation treatment.
Heating means such as a ceramic heater (not shown)
Also, a coolant circulation path (not shown) for circulating a coolant with an external coolant source (not shown) is provided, and the wafer W on the susceptor 6 can be maintained at a predetermined temperature. It is configured like this. The temperature is automatically controlled by a temperature sensor (not shown) and a temperature control mechanism (not shown).

An electrostatic chuck 11 for attracting and holding the wafer W is provided on the susceptor 6.
The electrostatic chuck 11 has a configuration in which a conductive thin film is sandwiched between polyimide resins from above and below, and a voltage from a high-voltage DC power supply 12 installed outside the processing container 3 is applied to the thin film. The wafer W is attracted and held on the upper surface of the electrostatic chuck 11 by the Coulomb force. Of course, such an electrostatic chuck 11
Alternatively, the wafer W may be held on the susceptor 6 by pressing the peripheral portion of the wafer W with a mechanical clamp.

On the periphery of the susceptor 6, an inner focus ring 21 having a substantially plane plane is provided so as to surround the electrostatic chuck 11. The inner focus ring 21 is made of conductive single crystal silicon. The inner focus ring 21 has a function of effectively causing the ions in the plasma to enter the wafer W.

On the outer circumference of the inner focus ring 21, there is further provided an outer focus ring 22 having a substantially annular plane. The outer focus ring 22 is made of quartz having an insulating property, and the upper edge of the outer periphery thereof is formed in a curved shape having an outward convex shape so that gas is smoothly discharged without settling. This outer focus ring 22
Has a function of suppressing the diffusion of plasma generated between the susceptor 6 and the upper electrode 41 together with a shield ring 44 described later.

As shown in FIG. 2, a baffle plate 23 made of an insulating material is arranged around the susceptor 6, and the inner peripheral portion of the baffle plate 23 has a quartz support or the like. It is fixed to the susceptor 6 by means of a bolt or the like. Therefore, the baffle plate 23 also moves up and down as the susceptor 6 moves up and down. A large number of through holes are formed in the baffle plate 23 and has a function of uniformly discharging gas.

A diffusing member 33 for introducing an etching gas or other gas into the processing chamber 2 is provided above the processing chamber 2 via an insulating support material 31 made of alumina and a cooling plate 32 made of aluminum. Is provided.
The cooling plate 32 constitutes a cooling member according to the present invention, and a cooling medium circulation path 34 is formed in an upper portion of the cooling plate 32 as shown in FIG. The coolant has a function of cooling the upper electrode 41 described later to a predetermined temperature by circulating the coolant in the coolant circulation path 34.

As shown in FIG. 2, the diffusing member 33 has a hollow structure having a baffle plate 35 on the lower surface side, and the baffle plate 35 has a large number of diffusing holes 3 therein.
5a are formed. A gas inlet 36 is provided at the center of the diffusion member 33, and an etching gas, for example, CF ₄ gas from a processing gas supply source 40 is further supplied via valves 37, 38 and a mass flow controller 39 for adjusting the flow rate. The gas is introduced into the processing chamber 2 through the inlet 36 and the diffusion hole 35a of the diffusion member 33. Further, the cooling plate 32 is also provided with a large number of discharge ports 32a, so that the gas in the baffle space S formed between the baffle plate 35 of the diffusion member 33 and the cooling plate 32 is discharged downward. There is.

Below the diffusing member 33, an upper electrode 41 is fixed to the lower surface of the above-mentioned cooling plate 32 so as to face the above-mentioned susceptor 6. This upper electrode 41
Is made of, for example, conductive single crystal silicon, is fixed to the peripheral portion of the lower surface of the cooling plate 32 by a bolt 42, and is electrically connected to the cooling plate 32. Also, the upper electrode 41 has a large number of ejection ports 4
1a is formed and is connected to the discharge port 32a of the cooling plate 32. Therefore, the gas in the baffle space S is uniformly discharged onto the wafer through the discharge ports 32a and 41a.

Between the lower surface of the cooling plate 32 and the upper surface of the upper electrode 41, a shim 43 shown in FIG. 3, which constitutes the heat transfer member of the present invention, is discharged from the cooling plate 32. The shim 43 is sandwiched between the outlet 32a and the discharge port 41a of the upper electrode 41. The upper surface of the shim 43 is the lower surface of the cooling plate 32 and the lower surface of the shim 43 is the upper electrode 41.
Is in surface contact with the upper surface of. The shim 43 has an annular shape and is made of a material having a good heat transfer coefficient, such as aluminum. Also, the thickness d of the shim 43
Is 0.2 mm. Of course, the thickness d of the shim 43 is not limited to the above value, but may be set to a value of 0.1 mm to 0.5 mm, for example, depending on the process conditions, the configuration of the apparatus, and the like. However, if the thickness is such that the bending can be canceled, it is preferable that the thickness is as thin as possible in view of the heat transfer rate. Note that this shim 43 in the present embodiment is
The setting position of is set approximately at the midpoint between the peripheral portion and the central portion of the upper electrode 41.

As described above, the discharge port 4 of the upper electrode 41
Although 1a is connected to the discharge port 32a of the cooling plate 32, since the high-speed and fine etching process is performed in the high-density plasma atmosphere, the pressure in the processing chamber 2 is reduced to a level larger than that of the conventional case, for example, up to 50 mTorr. Decompress,
Alternatively, if the power of the supplied high frequency power is increased to 2 kW, as shown in FIG.
1a upper surface (cooling plate 32 side upper surface) peripheral portion (FIG.
Depots are more likely to adhere to the area indicated by the broken line inside.
It is considered that this is because the potential difference between the upper electrode 41 and the cooling plate 32 becomes large, and the gas conductance of the discharge port 41a is small, so that the discharge phenomenon occurs according to Paschen's law.

In order to prevent such a situation, in the present embodiment, the diameter φ of the ejection port 41a of the upper electrode 41 is set to 0.1 mm larger than that of the conventional one, and φ = 0.6 mm. That is, according to Paschen's law, the pressure is set so as not to cause electric discharge. Therefore, the deposition is prevented from adhering to the peripheral portion of the upper surface of the ejection port 41a of the upper electrode 41.

Around the lower end of the upper electrode 41, the shield ring 44 is covered with a bolt 42 for fixing the above.
Is arranged. The shield ring 44 is made of quartz and has a function of forming a gap narrower than the gap between the electrostatic chuck 11 and the upper electrode 41 together with the outer focus ring 22 and suppressing diffusion of plasma. ing. An insulating ring 45 made of fluorine-based synthetic resin is provided between the upper end of the shield ring 44 and the ceiling wall of the processing container 3.

An exhaust pipe 52 communicating with a vacuuming means 51 such as a vacuum pump is connected to the lower portion of the processing container 3, and the above-mentioned baffle plate 23 arranged around the susceptor 6 is connected.
Through 10mTorr-100mT in the processing chamber 2
It is possible to evacuate to an arbitrary degree of reduced pressure in the orr.

Next, the high frequency power supply system of the etching apparatus 1 will be described. First, the frequency of the lower electrode susceptor 6 is about several hundred kHz, for example, 80.
The power from the high frequency power source 53 that outputs the high frequency power of 0 kHz is supplied through the matching unit 54. On the other hand, for the upper electrode 41, the power from the high frequency power supply 56 that outputs high frequency power having a frequency of 1 MHz or higher, for example, 27.12 MHz, which is higher than that of the high frequency power supply 53, is supplied to the cooling plate via the matching unit 55. 32
It is configured to be supplied through.

A load lock chamber 62 is adjacent to a side portion of the processing container 3 via a gate valve 61. In the load lock chamber 62, the wafer W to be processed is
A transfer means 63, such as a transfer arm, is provided for transferring the liquid crystal to and from the processing chamber 2 in the processing container 3.

The main part of the etching apparatus 1 according to the present embodiment is configured as described above. For example, the operation when etching the oxide film (SiO ₂ ) of the silicon wafer W will be described. First, after the gate valve 61 is opened, the wafer W is loaded into the processing chamber 2 by the transfer means 63. At this time, due to the operation of the drive motor 8, the susceptor 6 descends and is in a standby state for receiving the wafer W. Then, the wafer W is transferred by the transfer means 63.
After being placed on the electrostatic chuck 11, the transfer means 63 is retracted, the gate valve 61 is closed, and the susceptor 6 is raised to a predetermined processing position by the operation of the drive motor 8.

Next, the inside of the processing chamber 2 is decompressed by the evacuation means 51, and after a predetermined degree of decompression is reached, CF ₄ gas is supplied from the processing gas supply source 40, and the pressure in the processing chamber 2 becomes, for example, Set and maintained at 10 mTorr.

The high frequency power source 5 is connected to the upper electrode 41.
When high-frequency power having a frequency of 27.12 MHz is supplied from 6, plasma is generated between the upper electrode 41 and the susceptor 6. Further, with a slight delay (timing delay of 1 second or less) from this, the susceptor 6 is supplied with high frequency power having a frequency of 800 kHz from the high frequency power supply 54. By thus supplying the high frequency power to the susceptor 6 with a delayed timing, it is possible to prevent the wafer W from being damaged by an excessive voltage.
The CF ₄ gas in the processing chamber 2 is dissociated by the generated plasma, and the fluorine radicals generated at that time are controlled in incident speed by the bias voltage applied to the susceptor 6 side, and the silicon oxide film on the surface of the wafer W is controlled. (SiO ₂ ) is etched.

In this case, the susceptor 6 is provided with an outer focus ring 22 on the outer circumference of an inner focus ring 21 arranged so as to surround the wafer W, and above the outer focus ring 22 around the upper electrode 41. Since the arranged shield ring 43 is located and constitutes a gap shorter than the upper surface of the electrostatic chuck 11 and the lower surface of the upper electrode 41 as described above, the susceptor 6 is
The diffusion of plasma generated between the upper electrode 41 and the upper electrode 41 is suppressed, and the density of the plasma is high. Of course, even if the pressure inside the processing chamber 2 is as high as 10 mTorr, the diffusion of plasma can be effectively suppressed.

Further, since the inner focus ring 21 is arranged around the wafer W, the fluorine radicals are efficiently incident on the wafer W, and the etching rate of the silicon oxide film (SiO ₂ ) on the surface of the wafer W is It is getting higher.

By the way, when etching is performed by generating such plasma, as described above, the upper electrode 41 is heated by the plasma, so that the upper electrode 41 is in contact with the upper surface thereof for cooling. Although appropriately cooled by the plate 32, the upper electrode 41 itself tends to expand due to the heat at that time. However, the upper electrode 41
Is fixed by the bolts 42 at its peripheral portion, the upper electrode 41 eventually tries to bend downward near the central portion thereof, and conventionally, due to the bending, the contact between the central portion and the cooling plate 32 is poor. Therefore, there is a problem that the central portion is not sufficiently cooled.

In this respect, in the present embodiment, since the shim 43 is sandwiched between the lower surface of the cooling plate 32 and the upper surface of the upper electrode 41, the temperature difference in the upper electrode 41 is smaller than in the conventional case, and The temperature gradient is also relaxed. That is,
Since the ring-shaped shim 43 is provided at a position near the center of the upper surface of the upper electrode 41, the upper electrode 41 has a convex shape downward by that amount at this shim. Since the upper electrode 41 has a repulsive force that tries to restore upward due to its inherent elasticity, even if the upper electrode 41 is heated by plasma to expand and bend downward, the repulsive force causes the upper electrode 41 to bend. The bending force is canceled. Therefore, the contact between the shim 43 and the upper electrode 41 is maintained, and the shim 43 is
The heat of the upper electrode 41 is efficiently conducted to the cooling plate 32 at the contact portion with. As a result, the conventional center is high,
The temperature gradient of the upper electrode 41, which has been lowered in the peripheral portion, is relaxed, and the temperature characteristics shown in FIG. 5 are obtained.

That is, as shown in the characteristic of FIG.
The temperature of the portion in contact with is the lowest, and the central portion (C) and the peripheral portion (E) are slightly higher than that. However, the largest temperature difference T is smaller than the above-mentioned conventional temperature difference. Conventionally, this is because the part having the largest cooling effect and the lowest temperature is the peripheral part, and conversely, the part having the highest temperature is the center part. Therefore, the distance between the highest temperature part and the lowest temperature part is Although it corresponds to the length of the radius of the upper electrode 41, in the present embodiment, since the shim 43 is set approximately at the midpoint between the peripheral portion and the central portion of the upper electrode 41, the temperature is the highest. The distance between the lower portion and the lower portion is approximately half the radius of the upper electrode 41. Therefore, the temperature difference T becomes smaller than in the conventional case, and the gradient thereof is relaxed.

Therefore, according to the present embodiment, the temperature characteristics of the upper electrode 41 are more uniform than in the conventional case, and as a result, the plasma density is more uniform, and the uniformity of etching on the wafer is improved. are doing. Further, since the means for realizing such an action is only to sandwich the shim 43 between the upper electrode 41 and the cooling plate 32, it can be easily applied to an existing operating device.

In the above embodiment, only one shim 43 is sandwiched, but the present invention is not limited to this, and as shown in FIG. 6, two shims 71 having different sizes are provided.
The 72 may be clamped concentrically. According to this, the temperature difference can be further reduced, the temperature gradient can be relaxed, and various device configurations can be dealt with.

Further, in the above embodiment, the thickness d is 0.
Although a 2 mm shim is used, a shim 73 having a larger thickness d1 may be used instead, as shown in FIG. In this case, an annular groove 74 into which the shim 73 as shown in FIG. 8 can be fitted is formed on the lower surface of the cooling plate 32,
If the depth of the annular groove 74 is set to d1 −0.2 mm, when the shim 73 is housed in the annular groove 74, the lower surface of the shim 73 is 0.2 mm, which is the cooling plate, as in the previous embodiment. It will project from the lower surface of 32. And this sim 7
According to No. 3, the shim 7 is the portion that contacts the cooling plate 32.
Since not only the upper surface of 3 but also the inner and outer peripheral side surfaces are in contact with each other, the area in contact with the cooling plate 32 is increased, and the cooling efficiency, that is, the heat transfer efficiency from the upper electrode 41 is further improved. Although the ejection port 41a of the upper electrode 41 is not shown, the annular groove 74 is formed so as to avoid the ejection port 41a.

Moreover, in the shim 73 having such a certain thickness, as shown in FIG. 9, it is easy to incline the lower surface 73a thereof in the radial direction, and the upper electrode 41 is deformed when it is bent by thermal expansion. Therefore, it becomes possible to maintain a good contact state. Therefore, the cooling efficiency is further improved.

Although a shim is used as the transmission plate in the above-mentioned example, as shown in FIG. 10, an annular convex portion 75 is formed on the lower surface of the cooling plate 32, and the height d2 of the convex portion 75 is formed.
May be set to 0.2 mm, for example. The upper electrode 4
Although the illustration of the first discharge port 41a is omitted, the convex portion 75
Are formed so as to avoid these discharge ports 41a. Then, in such a manner, the convex portion 75 on the lower surface of the cooling plate 32
By forming the above, the number of members can be reduced by one, the area around the upper electrode 41 can be simplified correspondingly, and a preferable device configuration can be achieved in terms of maintenance and prevention of contamination. Of course, a plurality of the convex portions 75 may be formed concentrically, and the lower surface thereof may be inclined in the radial direction as shown in FIG.

Although the above-described embodiment is configured as an apparatus for etching a silicon oxide film (SiO ₂ ) on the surface of a silicon semiconductor wafer, the present invention is not limited to this, and the present invention is an apparatus for performing another etching process. Of course, the object to be processed is not limited to the wafer,
It may be an LCD substrate. Further, the apparatus is not limited to the etching apparatus, and can be configured as another plasma processing apparatus such as an ashing apparatus, a sputtering apparatus, or a CVD apparatus.

[0047]

According to the invention of claims 1 to 3, it is possible to correct the conventional thermal gradient characteristic of the upper electrode having a high central portion and a low peripheral portion, and to obtain a temperature characteristic closer to flat. Moreover, the temperature difference itself is small. Therefore, the plasma density can be made more uniform than before, and the uniformity of processing can be improved. Particularly, in claim 2, the heat transfer efficiency, that is, the cooling efficiency of the upper electrode is good, and in claim 3, the number of members per se does not increase more than in the past, so maintenance is easy.

[Brief description of drawings]

FIG. 1 is an explanatory cross-sectional view of an etching apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged explanatory view of a main part near an upper electrode in the etching apparatus of FIG.

3 is a perspective view of a shim forming a transmission plate used in the etching apparatus of FIG.

FIG. 4 is an explanatory diagram showing a connection state of cooling plates and respective discharge ports of an upper electrode in the etching apparatus of FIG.

5 is a graph showing temperature characteristics of an upper electrode in the etching apparatus of FIG.

FIG. 6 is a perspective view of two concentric shims that can be applied to the present invention.

FIG. 7 is a perspective view of a thick shim applicable to the present invention.

8 is an explanatory view showing a state where the shim of FIG. 7 is fitted in an annular groove on the lower surface of the cooling plate.

9 is an explanatory view showing a state in which the lower surface of the shim of FIG. 7 is inclined in the radial direction.

FIG. 10 is an explanatory diagram showing a state where an annular convex portion is formed on the lower surface of the cooling plate.

FIG. 11 is an explanatory diagram of an etching apparatus according to a conventional technique.

12 is a graph showing the temperature characteristics of the upper electrode in the etching apparatus of FIG.

[Explanation of symbols]

 1 Etching Device 2 Processing Chamber 3 Processing Container 6 Susceptor 21 Inner Focus Ring 22 Outer Focus Ring 32 Cooling Plate 32a Discharge Port 41 Upper Electrode 41a Discharge Port 44 Shield Ring 53, 55 High Frequency Power Supply W Wafer

Claims (3)

[Claims] 1. An upper electrode and a lower electrode are vertically opposed to each other in a processing chamber, and high-frequency power is supplied to at least one of the upper electrode and the lower electrode to generate plasma in the processing chamber, thereby generating plasma in the processing chamber. An apparatus configured to perform processing on a processing body, wherein a cooling member having a flat lower surface is arranged in contact with a flat upper surface of the upper electrode, and the upper electrode and the cooling member are fixed at a peripheral portion thereof. In the plasma processing apparatus according to, characterized in that, between the upper electrode and the cooling member inside the fixed portion, a heat transfer member that is in contact with both the upper electrode and the cooling member is interposed. Plasma processing equipment. 2. The heat transfer member is annular, and a concentric annular groove is formed on the lower surface of the cooling member inside the fixed portion, and the heat transfer member is delivered in contact with the annular groove. The plasma processing apparatus according to claim 1, wherein the thickness of the heat transfer member is longer than the depth of the groove. 3. The heat transfer member has an annular shape, and the heat transfer member is integrally formed with the cooling member on the lower surface of the cooling member inside the fixed portion. The plasma processing apparatus according to. Plasma processing equipment.