JPH09266115A - Static magnetic wave device - Google Patents
Static magnetic wave deviceInfo
- Publication number
- JPH09266115A JPH09266115A JP9006705A JP670597A JPH09266115A JP H09266115 A JPH09266115 A JP H09266115A JP 9006705 A JP9006705 A JP 9006705A JP 670597 A JP670597 A JP 670597A JP H09266115 A JPH09266115 A JP H09266115A
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- JP
- Japan
- Prior art keywords
- single crystal
- crystal film
- wave device
- lattice constant
- magnetostatic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁性ガーネット単
結晶膜を用いた静磁波デバイスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetostatic wave device using a magnetic garnet single crystal film.
【０００２】[0002]
【従来の技術】従来、液相エピタキシャル法によりガー
ネット単結晶基板上に成長させた磁性ガーネット単結晶
膜は、バブルメモリー用や光アイソレーター用の磁性材
料として利用されている。2. Description of the Related Art Conventionally, a magnetic garnet single crystal film grown on a garnet single crystal substrate by a liquid phase epitaxial method has been used as a magnetic material for bubble memories and optical isolators.
【０００３】静磁波デバイス用の磁性ガーネットには、
従来、フラックス法や浮遊帯域溶融法などで得られた磁
性ガーネット単結晶のバルクを球状に加工し、高い精度
で研磨処理されたものが用いられていた。ところが、こ
のような球面加工する方法では量産性の高い製造が容易
でなかった。Magnetic garnets for magnetostatic wave devices include:
Conventionally, a bulk of magnetic garnet single crystal obtained by a flux method, a floating zone melting method, or the like is processed into a spherical shape, and is polished with high accuracy. However, such a spherical surface processing method is not easy to mass-produce.
【０００４】そこで、最近では、静磁波デバイスとし
て、液相エピタキシャル法により磁性ガーネット単結晶
膜をガーネット単結晶基板上に成長させたものを用いる
ようになってきた。これは、この方法によれば磁性ガー
ネット単結晶膜の品質が良好であること、球状の磁性ガ
ーネット単結晶のバルクのように球状加工や高精度の研
磨処理が不要なこと、さらにこの結果、デバイスの構成
が単純になるなどの利点があることによる。Therefore, recently, as a magnetostatic wave device, a device in which a magnetic garnet single crystal film is grown on a garnet single crystal substrate by a liquid phase epitaxial method has been used. According to this method, the quality of the magnetic garnet single crystal film is good, spherical processing and high-precision polishing treatment like the bulk of spherical magnetic garnet single crystal are unnecessary, and as a result, the device This is because there are advantages such as the simple configuration of.
【０００５】ところで、磁性ガーネット単結晶膜の磁気
特性の１つである飽和磁化（Ｉｓ）は、静磁波デバイス
の動作周波数に係わるため、動作周波数を下げる場合に
は、飽和磁化を下げる手法が一般的にとられる。このた
めに、一般的には、代表的磁性ガーネットであるＹ3 Ｆ
ｅ5 Ｏ12中のＦｅ3+の一部をＧａ3+又はＡｌ3+などの非
磁性イオンで置換することにより対応されている。又、
それぞれのイオン半径が異なるため、この置換の結果、
ガーネット単結晶基板と磁性ガーネット単結晶膜との格
子定数のミスマッチ量が大きくなる。このため、結晶学
的な品質を損なわないよう、一般的に、組成式Ｙ3 Ｆｅ
5 Ｏ12中Ｙ3+の一部をＬａ3+、Ｂｉ3+など、又はＦｅ3+
をＳｃ3+などで置換することにより対応されている。By the way, the saturation magnetization (Is), which is one of the magnetic characteristics of the magnetic garnet single crystal film, is related to the operating frequency of the magnetostatic wave device. Therefore, when lowering the operating frequency, a method of lowering the saturation magnetization is generally used. To be taken. For this reason, Y 3 F which is a typical magnetic garnet is generally used.
This is achieved by substituting a part of Fe 3+ in e 5 O 12 with a nonmagnetic ion such as Ga 3+ or Al 3+ . or,
Since each ionic radius is different, the result of this substitution is
The amount of mismatch in lattice constant between the garnet single crystal substrate and the magnetic garnet single crystal film becomes large. For this reason, the composition formula Y 3 Fe is generally used so as not to impair the crystallographic quality.
5 O 12 contains a part of Y 3+ as La 3+ , Bi 3+ , or Fe 3+
Is replaced by Sc 3+ or the like.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来
の、液相エピタキシャル法による磁性ガーネット単結晶
膜を用いた静磁波デバイスにおいては、挿入損失が大き
くなったり、リップルが現れるなどして、良好な特性を
得ることができないという問題点を有していた。However, in the conventional magnetostatic wave device using the magnetic garnet single crystal film by the liquid phase epitaxial method, the insertion loss becomes large and ripples appear, so that the good characteristics are obtained. It had a problem that it was not possible to obtain.
【０００７】そこで、本発明の目的は、挿入損失が小さ
くリップルが小さい、良好な特性を有する静磁波デバイ
スを提供することにある。Therefore, an object of the present invention is to provide a magnetostatic wave device having good characteristics with a small insertion loss and a small ripple.
【０００８】[0008]
【課題を解決するための手段】磁性ガーネット単結晶膜
をＧｄ3 Ｇａ5 Ｏ12などのガーネット単結晶基板上にエ
ピタキシャル成長させる場合において特性上問題となる
点は、ガーネット単結晶基板と磁性ガーネット単結晶膜
との格子定数のミスマッチ量である。[Problems to be Solved by the Invention] When epitaxially growing a magnetic garnet single crystal film on a garnet single crystal substrate such as Gd 3 Ga 5 O 12 , a characteristic problem is that the garnet single crystal substrate and magnetic garnet single crystal It is the amount of mismatch of the lattice constant with the film.
【０００９】従来より、バブルメモリーや、光アイソレ
ーター用材料として、ガーネット単結晶基板上にエピタ
キシャル成長させた磁性ガーネット単結晶膜が用いられ
てきた。そして、この場合の格子定数のミスマッチ量に
ついては、磁気的な特性を制御するために、わざと大き
くして歪みによる応力誘導異方性磁界を発生させたり、
逆に、この磁界が発生しないようにより０に近づけたり
する工夫がなされてきた。Conventionally, a magnetic garnet single crystal film epitaxially grown on a garnet single crystal substrate has been used as a material for bubble memories and optical isolators. In this case, the lattice constant mismatch amount is intentionally increased in order to control the magnetic characteristics to generate a stress-induced anisotropic magnetic field due to strain,
On the contrary, measures have been taken to bring the magnetic field closer to 0 so that this magnetic field is not generated.
【００１０】当初、本発明者は、静磁波デバイス用の磁
性ガーネット単結晶膜においては、一般に強磁性共鳴半
値幅（ΔＨ）のより小さい磁性ガーネット単結晶膜が望
ましいとされているため、これを達成するためには格子
定数のミスマッチ量をほぼ０とした材料が最適と判断し
てきた。Initially, the inventor of the present invention considered that a magnetic garnet single crystal film having a smaller ferromagnetic resonance half-value width (ΔH) was desirable as a magnetic garnet single crystal film for a magnetostatic wave device. In order to achieve this, it has been judged that a material having a lattice constant mismatch amount of almost 0 is optimal.
【００１１】しかしながら、格子定数のミスマッチ量
と、挿入損失やリップルなどの静磁波デバイスとしたと
きの特性について詳細な検討を行なった結果、これら静
磁波デバイスの特性は、ガーネット単結晶基板と磁性ガ
ーネット単結晶膜との格子定数のミスマッチ量を０に近
づけるのではなく、ある特定範囲のミスマッチ量を確保
すると改善できることを見出だした。However, as a result of a detailed examination of the lattice constant mismatch amount and the characteristics of the magnetostatic wave device such as insertion loss and ripple, the characteristics of these magnetostatic wave devices are as follows: It has been found that improvement can be achieved by ensuring the mismatch amount of the lattice constant with the single crystal film to a value within a certain specific range, rather than bringing the mismatch amount closer to zero.
【００１２】即ち、上記目的を達成するため、本発明の
静磁波デバイスは、Ｇｄ3 Ｇａ5 Ｏ12単結晶基板上に液
相エピタキシャル法で形成された、一般式Ｙ3-x Ｍx Ｆ
ｅ5-y Ｎy Ｏ12（但し、ＭはＬａ、Ｂｉ、Ｌｕ、Ｇｄの
うち少なくとも１つ、ＮはＧａ、Ａｌ、Ｉｎ、Ｓｃのう
ち少なくとも１つ、０＜ｘ≦１．０、０＜ｙ≦１．５）
で示される単結晶膜であって、該単結晶膜の格子定数は
前記単結晶基板の格子定数より大きく、かつ該格子定数
の差Δａが０．０００４ｎｍ≦Δａ≦０．００１ｎｍの
範囲内にある単結晶膜が用いられていることを特徴とす
る。In other words, in order to achieve the above object, the magnetostatic wave device of the present invention has a general formula Y 3-x M x F formed on a Gd 3 Ga 5 O 12 single crystal substrate by a liquid phase epitaxial method.
e 5-y N y O 12 (M is at least one of La, Bi, Lu, and Gd, N is at least one of Ga, Al, In, and Sc, and 0 <x ≦ 1.0, 0 <Y ≦ 1.5)
And the lattice constant of the single crystal film is larger than the lattice constant of the single crystal substrate, and the difference Δa of the lattice constants is in the range of 0.0004 nm ≦ Δa ≦ 0.001 nm. It is characterized in that a single crystal film is used.
【００１３】そして、このような構成により、挿入損失
が小さくリップルが小さい、良好な特性を有する静磁波
デバイスを得ることができる。With such a structure, it is possible to obtain a magnetostatic wave device having good characteristics with a small insertion loss and a small ripple.
【００１４】これは、以下の理由によるものと考えられ
る。即ち、上記格子定数の差Δａ（即ち、ミスマッチ
量）を有する、磁性ガーネット単結晶膜はＧｄ3 Ｇａ5
Ｏ12単結晶基板よりも大きな格子定数を有することにな
るので、単結晶基板に対して圧縮応力を加えることにな
る。このとき単結晶膜内に歪みが生じるが、これは単結
晶膜の結晶格子を単結晶膜面に対して水平に引き延ばす
形となる。この効果により、例えば表面静磁波のように
単結晶膜に対して水平に直流磁界を印加する場合におい
ては、電子スピンの磁化の方向が直流磁界の方向に回転
することを容易とし、この結果、単結晶膜内の内部磁界
をより均一にする作用があると考えられる。This is considered to be due to the following reasons. That is, the magnetic garnet single crystal film having the above-mentioned lattice constant difference Δa (that is, the amount of mismatch) is Gd 3 Ga 5
Since it has a larger lattice constant than the O 12 single crystal substrate, compressive stress is applied to the single crystal substrate. At this time, distortion occurs in the single crystal film, which is in a form in which the crystal lattice of the single crystal film is stretched horizontally with respect to the single crystal film surface. By this effect, for example, when a DC magnetic field is applied horizontally to the single crystal film like a surface magnetostatic wave, it is easy to rotate the magnetization direction of the electron spins in the direction of the DC magnetic field, and as a result, It is considered to have the effect of making the internal magnetic field in the single crystal film more uniform.
【００１５】なお、格子定数の差Δａを０. ０００４ｎ
ｍ≦Δａ≦０. ００１ｎｍの範囲内に限定する理由は、
以下の通りである。The difference Δa in lattice constant is 0.0004n.
The reason for limiting to the range of m ≦ Δa ≦ 0.001 nm is as follows.
It is as follows.
【００１６】即ち、格子定数の差Δａが０．００１ｎｍ
を超えると、単結晶膜内の歪みによる異方性磁界の単結
晶膜内不均一が生じ、静磁波デバイスとしての特性の再
現が得られなくなり好ましくない。又、単結晶膜内の歪
による誘導磁気異方性が大きくなり、より低周波での動
作が困難となる。さらに、格子定数の差Δａが大きくな
ると、単結晶膜にクラックが生じるようになり好ましく
ない。That is, the difference Δa in lattice constant is 0.001 nm.
If it exceeds, non-uniformity of the anisotropic magnetic field in the single crystal film due to strain in the single crystal film occurs, and reproduction of characteristics as a magnetostatic wave device cannot be obtained, which is not preferable. Further, the induced magnetic anisotropy due to the strain in the single crystal film becomes large, and it becomes difficult to operate at a lower frequency. Further, if the difference Δa in lattice constant becomes large, cracks will occur in the single crystal film, which is not preferable.
【００１７】一方、格子定数の差Δａが０．０００４ｎ
ｍ未満になると、静磁波デバイスとしたときの、挿入損
失を小さくリップルを抑えるという効果が得られ難くな
るため好ましくない。又、ウエハー面内からチップを切
り出して静磁波デバイスを作製したときの、挿入損失や
リップルなどの特性上のばらつきが大きい。これらは、
上述のような、単結晶膜と単結晶基板との相互作用が小
さくなるためと考えられる。On the other hand, the lattice constant difference Δa is 0.0004n.
If it is less than m, it is difficult to obtain the effect of reducing the insertion loss and suppressing the ripple when the magnetostatic wave device is used, which is not preferable. Further, when a magnetostatic wave device is manufactured by cutting a chip out of the wafer surface, there are large variations in characteristics such as insertion loss and ripples. They are,
It is considered that the interaction between the single crystal film and the single crystal substrate as described above is reduced.
【００１８】[0018]
【発明の実施の形態】以下、本発明の静磁波デバイスに
ついて、その実施の形態を実施例にもとづいて説明す
る。BEST MODE FOR CARRYING OUT THE INVENTION The magnetostatic wave device of the present invention will be described below based on its embodiments.
【００１９】（実施例１）まず、加熱炉内に設置された
白金製の坩堝に、磁性ガーネットを構成する元素の酸化
物であるＹ2 Ｏ3 を０．３９モル％、Ｆｅ2 Ｏ3 を９．
１７モル％、Ｌａ2 Ｏ3 を０．０７モル％、Ｇａ2 Ｏ3
を０．３７モル％と、溶剤としてのＰｂＯを８４．００
モル％、Ｂ2 Ｏ3 を６．００モル％の比率で充填し、約
１２００℃に加熱溶融して均質化した。その後、この融
液を８８０〜９００℃に降温保持して磁性ガーネット構
成溶液を過飽和とした。(Example 1) First, a platinum crucible installed in a heating furnace was charged with 0.39 mol% of Y 2 O 3 , which is an oxide of an element constituting magnetic garnet, and Fe 2 O 3 . 9.
17 mol%, La 2 O 3 0.07 mol%, Ga 2 O 3
Of 0.37 mol% and PbO as a solvent of 84.00
Mol% and B 2 O 3 were filled in a ratio of 6.00 mol%, and the mixture was heated and melted to about 1200 ° C. to be homogenized. Then, the melt was maintained at a temperature of 880 to 900 ° C. to make the magnetic garnet-constituting solution supersaturated.
【００２０】その後、この融液に下地基板として（１１
１）面方位のＧｄ3 Ｇａ5 Ｏ12単結晶基板を浸漬し、厚
み２０μｍであって狙い組成式Ｙ2.95Ｌａ0.05Ｆｅ4.55
Ｇａ0.45Ｏ12の磁性ガーネット単結晶膜を作製した。Then, the melt was used as a base substrate (11
1) Dip a Gd 3 Ga 5 O 12 single crystal substrate having a plane orientation, and have a target composition formula Y 2.95 La 0.05 Fe 4.55 with a thickness of 20 μm.
A magnetic garnet single crystal film of Ga 0.45 O 12 was prepared.
【００２１】得られた単結晶膜の飽和磁化（Ｉｓ）は
０．１２５Ｗｂ／ｍ2 、強磁性共鳴半値幅（ΔＨ）は５
３．５Ａ／ｍであった。又、単結晶膜と単結晶基板の格
子定数の差｛Δａ＝（単結晶膜の格子定数）−（単結晶
基板の格子定数）｝、即ちミスマッチ量を２結晶法によ
るＸ線ロッキングカーブ法を用いて測定した結果は０．
０００５ｎｍであった。The obtained single crystal film had a saturation magnetization (Is) of 0.125 Wb / m 2 and a ferromagnetic resonance half-value width (ΔH) of 5
It was 3.5 A / m. In addition, the difference between the lattice constants of the single crystal film and the single crystal substrate {Δa = (lattice constant of the single crystal film) − (lattice constant of the single crystal substrate)}, that is, the amount of mismatch is determined by the X-ray rocking curve method by the two-crystal method. The result of measurement using is 0.
It was 0005 nm.
【００２２】次に、図１に示すように、４×４ｍｍ角の
チップ状に切断した単結晶基板１の磁性ガーネット単結
晶膜２の上に、Ａｌ蒸着により線幅５０μｍのトランス
デューサ３、４を２ｍｍの間隔で形成して表面静磁波デ
バイスを作製した。そして、４４７５Ａ／ｍの直流磁界
（Ｈex）を膜面に平行かつトランスデューサに平行に印
加し、フィルタ特性を測定した。その結果を図２に示
す。Next, as shown in FIG. 1, on the magnetic garnet single crystal film 2 of the single crystal substrate 1 cut into 4 × 4 mm square chips, transducers 3 and 4 having a line width of 50 μm are formed by Al vapor deposition. Surface magnetostatic wave devices were produced by forming them at intervals of 2 mm. Then, a DC magnetic field (H ex ) of 4475 A / m was applied parallel to the film surface and parallel to the transducer, and the filter characteristics were measured. The result is shown in FIG.
【００２３】なお、図１において、５、６は静磁波の吸
収体、Ｉinはマイクロ波の入力方向、Ｗは表面波（ＭＳ
ＳＷ）の伝播方向、Ｉout はマイクロ波の出力方向であ
る。 （実施例２）まず、加熱炉内に設置された白金製の坩堝
に、磁性ガーネットを構成する元素の酸化物であるＹ2
Ｏ3 を０．３８モル％、Ｆｅ2 Ｏ3 を９．１７モル％、
Ｌａ2 Ｏ3 を０．０８モル％、Ｇａ2 Ｏ3 を０．３７モ
ル％と、溶剤としてのＰｂＯを８４．００モル％、Ｂ2
Ｏ3 を６．００モル％の比率で充填し、約１２００℃に
加熱溶融して均質化した。その後、この融液を８８０〜
９００℃に降温保持して磁性ガーネット構成溶液を過飽
和とした。In FIG. 1, 5 and 6 are magnetostatic wave absorbers, I in is the microwave input direction, and W is the surface wave (MS
SW) propagation direction, I out is the microwave output direction. (Example 2) First, in a platinum crucible installed in a heating furnace, Y 2 which is an oxide of an element forming a magnetic garnet is used.
O 3 is 0.38 mol%, Fe 2 O 3 is 9.17 mol%,
La 2 O 3 0.08 mol%, Ga 2 O 3 0.37 mol%, PbO as a solvent 84.00 mol%, B 2
O 3 was charged at a ratio of 6.00 mol%, and was heated and melted to about 1200 ° C. to homogenize. Then, melt this solution 880-
The temperature was maintained at 900 ° C. to keep the magnetic garnet-constituting solution supersaturated.
【００２４】その後、実施例１と同様に、この融液に下
地基板として（１１１）面方位のＧｄ3 Ｇａ5 Ｏ12単結
晶基板を浸漬し、厚み２０μｍであって狙い組成式Ｙ
2.95Ｌａ0.05Ｆｅ4.55Ｇａ0.45Ｏ12の磁性ガーネット単
結晶膜を作製した。Then, in the same manner as in Example 1, a Gd 3 Ga 5 O 12 single crystal substrate having a (111) plane orientation was immersed as a base substrate in this melt, and the target composition formula Y was 20 μm.
A magnetic garnet single crystal film of 2.95 La 0.05 Fe 4.55 Ga 0.45 O 12 was prepared.
【００２５】得られた単結晶膜の飽和磁化（Ｉｓ）は
０．１２５Ｗｂ／ｍ2 、強磁性共鳴半値幅（ΔＨ）は６
２．０Ａ／ｍであった。又、単結晶膜について、実施例
１と同様に、格子定数のミスマッチ量を測定した結果は
０．０００９ｎｍであった。The obtained single crystal film has a saturation magnetization (Is) of 0.125 Wb / m 2 and a ferromagnetic resonance half-value width (ΔH) of 6
It was 2.0 A / m. Further, with respect to the single crystal film, the result of measuring the lattice constant mismatch amount was 0.0009 nm as in Example 1.
【００２６】次に、実施例１と同様にして、表面静磁波
デバイスを作製し、そのフィルタ特性を測定した。その
結果を図３に示す。Then, in the same manner as in Example 1, a surface magnetostatic wave device was prepared and its filter characteristics were measured. The result is shown in FIG.
【００２７】（比較例）まず、加熱炉内に設置された白
金製の坩堝に、磁性ガーネットを構成する元素の酸化物
であるＹ2 Ｏ3 を０．４１モル％、Ｆｅ2 Ｏ3 を９．１
７モル％、Ｌａ2 Ｏ3 を０．０５モル％、Ｇａ2 Ｏ3 を
０．３７モル％と、溶剤としてのＰｂＯを８４．００モ
ル％、Ｂ2 Ｏ3 を６．００モル％の比率で充填し、約１
２００℃に加熱溶融して均質化した。その後、この融液
を８８０〜９００℃に降温保持して磁性ガーネット構成
溶液を過飽和とした。(Comparative Example) First, in a platinum crucible installed in a heating furnace, 0.41 mol% of Y 2 O 3 which is an oxide of an element constituting magnetic garnet and 9% of Fe 2 O 3 were added. .1
7 mol%, La 2 O 3 0.05 mol%, Ga 2 O 3 0.37 mol%, PbO as a solvent 84.00 mol%, B 2 O 3 6.00 mol% Fill with, about 1
The mixture was heated to 200 ° C., melted and homogenized. Then, the melt was maintained at a temperature of 880 to 900 ° C. to make the magnetic garnet-constituting solution supersaturated.
【００２８】その後、実施例１と同様に、この融液に下
地基板として（１１１）面方位のＧｄ3 Ｇａ5 Ｏ12単結
晶基板を浸漬し、厚み２０μｍであって狙い組成式Ｙ
2.95Ｌａ0.05Ｆｅ4.55Ｇａ0.45Ｏ12の磁性ガーネット単
結晶膜を作製した。Then, as in Example 1, a Gd 3 Ga 5 O 12 single crystal substrate having a (111) plane orientation was immersed as a base substrate in this melt, and the target composition formula Y was 20 μm.
A magnetic garnet single crystal film of 2.95 La 0.05 Fe 4.55 Ga 0.45 O 12 was prepared.
【００２９】得られた単結晶膜の飽和磁化（Ｉｓ）は
０．１２３Ｗｂ／ｍ2 、強磁性共鳴半値幅（ΔＨ）は８
７．５Ａ／ｍであった。又、単結晶膜について、実施例
１と同様に、格子定数のミスマッチ量を測定した結果は
−０．０００３ｎｍであった。The obtained single crystal film had a saturation magnetization (Is) of 0.123 Wb / m 2 and a ferromagnetic resonance half-value width (ΔH) of 8
It was 7.5 A / m. Further, with respect to the single crystal film, the result of measuring the mismatch amount of the lattice constant as in Example 1 was -0.0003 nm.
【００３０】次に、実施例１と同様にして、表面静磁波
デバイスを作製し、そのフィルタ特性を測定した。その
結果を図４に示す。Then, in the same manner as in Example 1, a surface magnetostatic wave device was prepared and its filter characteristics were measured. FIG. 4 shows the results.
【００３１】以上、実施例１、２及び比較例の結果を対
比すると、図２、３に示す本発明の静磁波デバイスの場
合は、図４に示す比較例と比べて、挿入損失及びリップ
ルが小さいフィルタ特性が得られている。Comparing the results of Examples 1 and 2 and the comparative example as described above, in the case of the magnetostatic wave device of the present invention shown in FIGS. 2 and 3, as compared with the comparative example shown in FIG. A small filter characteristic is obtained.
【００３２】なお、上記実施例においては、組成式Ｙ
2.95Ｌａ0.05Ｆｅ4.55Ｇａ0.45Ｏ12で表される磁性ガー
ネット単結晶膜の場合について説明したが、本発明はこ
れのみに限定されるものではない。即ち、Ｇｄ3 Ｇａ5
Ｏ12単結晶基板上に液相エピタキシャル法で形成され
た、例えばＹ2.78Ｌａ0.02Ｂｉ0.20Ｆｅ4.50Ｇａ0.50Ｏ
12、Ｙ2.85Ｂｉ0.15Ｆｅ4.30Ｓｃ0.10Ｇａ0.60Ｏ12など
の一般式Ｙ3-x Ｍx Ｆｅ5-y Ｎy Ｏ12（但し、ＭはＬ
ａ、Ｂｉ、Ｌｕ、Ｇｄのうち少なくとも１つ、ＮはＧ
ａ、Ａｌ、Ｉｎ、Ｓｃのうち少なくとも１つ）で表され
る単結晶膜であって、単結晶膜の格子定数が単結晶基板
の格子定数より大きく、かつこの格子定数の差Δａが
０. ０００４ｎｍ≦Δａ≦０. ００１ｎｍの範囲内の単
結晶膜を用いた静磁波デバイスについても、同様のフィ
ルタ特性の効果を得ることができる。In the above embodiment, the composition formula Y
The case of the magnetic garnet single crystal film represented by 2.95 La 0.05 Fe 4.55 Ga 0.45 O 12 has been described, but the present invention is not limited to this. That is, Gd 3 Ga 5
For example, Y 2.78 La 0.02 Bi 0.20 Fe 4.50 Ga 0.50 O formed by a liquid phase epitaxial method on an O 12 single crystal substrate.
12 , Y 2.85 Bi 0.15 Fe 4.30 Sc 0.10 Ga 0.60 O 12 and other general formulas Y 3-x M x Fe 5-y N y O 12 (where M is L
at least one of a, Bi, Lu, and Gd, and N is G
a, Al, In, and Sc), the lattice constant of the single crystal film is larger than the lattice constant of the single crystal substrate, and the difference Δa of the lattice constant is 0. The same effect of the filter characteristics can be obtained also in the magnetostatic wave device using the single crystal film in the range of 0004 nm ≦ Δa ≦ 0.001 nm.
【００３３】[0033]
【発明の効果】以上の説明で明らかなように、Ｇｄ3 Ｇ
ａ5 Ｏ12単結晶基板とその上に形成された磁性ガーネッ
ト単結晶膜との格子定数の差Δａ｛（単結晶膜の格子定
数）−（単結晶基板の格子定数）｝が０. ０００４ｎｍ
≦Δａ≦０. ００１ｎｍの範囲の単結晶膜を用いること
により、挿入損失が小さくリップルが小さい、良好な特
性を有する静磁波デバイスを得ることができる。As is clear from the above description, Gd 3 G
The difference Δa {(lattice constant of single crystal film) − (lattice constant of single crystal substrate)} in the lattice constant between the a 5 O 12 single crystal substrate and the magnetic garnet single crystal film formed thereon is 0.0004 nm.
By using the single crystal film in the range of ≦ Δa ≦ 0.001 nm, it is possible to obtain a magnetostatic wave device having good characteristics with a small insertion loss and a small ripple.
【図１】本発明の静磁波デバイスの一例を示す斜視図で
ある。FIG. 1 is a perspective view showing an example of a magnetostatic wave device of the present invention.
【図２】本発明の一実施例の静磁波デバイスのフィルタ
特性を示す図である。FIG. 2 is a diagram showing filter characteristics of a magnetostatic wave device according to an embodiment of the present invention.
【図３】本発明の他の実施例の静磁波デバイスのフィル
タ特性を示す図である。FIG. 3 is a diagram showing filter characteristics of a magnetostatic wave device according to another embodiment of the present invention.
【図４】比較例の静磁波デバイスのフィルタ特性を示す
図である。FIG. 4 is a diagram showing filter characteristics of a magnetostatic wave device of a comparative example.
１ 単結晶基板 ２ 磁性ガーネット単結晶膜 ３、４ トランスデューサー ５、６ 吸収体 Ｈex 外部磁界 Ｉin マイクロ波の入力方向 Ｗ 表面波の伝播方向 Ｉout マイクロ波の出力方向1 Single crystal substrate 2 Magnetic garnet single crystal film 3, 4 Transducer 5, 6 Absorber H ex External magnetic field I in Microwave input direction W Surface wave propagation direction I out Microwave output direction
Claims (1)
ピタキシャル法で形成された、一般式Ｙ3-x Ｍx Ｆｅ
5-y Ｎy Ｏ12（但し、ＭはＬａ、Ｂｉ、Ｌｕ、Ｇｄのう
ち少なくとも１つ、ＮはＧａ、Ａｌ、Ｉｎ、Ｓｃのうち
少なくとも１つ、０＜ｘ≦１．０、０＜ｙ≦１．５）で
示される単結晶膜であって、該単結晶膜の格子定数は前
記単結晶基板の格子定数より大きく、かつ該格子定数の
差Δａが０．０００４ｎｍ≦Δａ≦０．００１ｎｍの範
囲内にある単結晶膜が用いられていることを特徴とする
静磁波デバイス。1. A general formula Y 3-x M x Fe formed on a Gd 3 Ga 5 O 12 single crystal substrate by a liquid phase epitaxial method.
5-y N y O 12 (where M is at least one of La, Bi, Lu and Gd, N is at least one of Ga, Al, In and Sc, 0 <x ≦ 1.0, 0 < y ≦ 1.5), the lattice constant of the single crystal film is larger than the lattice constant of the single crystal substrate, and the difference Δa in the lattice constant is 0.0004 nm ≦ Δa ≦ 0. A magnetostatic wave device characterized in that a single crystal film within a range of 001 nm is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00670597A JP3387341B2 (en) | 1996-01-22 | 1997-01-17 | Surface magnetostatic wave device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-8662 | 1996-01-22 | ||
| JP866296 | 1996-01-22 | ||
| JP00670597A JP3387341B2 (en) | 1996-01-22 | 1997-01-17 | Surface magnetostatic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09266115A true JPH09266115A (en) | 1997-10-07 |
| JP3387341B2 JP3387341B2 (en) | 2003-03-17 |
Family
ID=26340898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00670597A Expired - Fee Related JP3387341B2 (en) | 1996-01-22 | 1997-01-17 | Surface magnetostatic wave device |
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| Country | Link |
|---|---|
| JP (1) | JP3387341B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017041556A (en) * | 2015-08-20 | 2017-02-23 | 国立大学法人 筑波大学 | Magnetic composite and high frequency device |
-
1997
- 1997-01-17 JP JP00670597A patent/JP3387341B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017041556A (en) * | 2015-08-20 | 2017-02-23 | 国立大学法人 筑波大学 | Magnetic composite and high frequency device |
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| Publication number | Publication date |
|---|---|
| JP3387341B2 (en) | 2003-03-17 |
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