JPH0926599A - Active matrix type liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to improve the yield during a stage for aligning the upper and lower substrates of the cells of an active matrix type liquid crystal display device and to provide the liquid crystal display device which is high in opening rate, is bright and is low in electric power consumption. SOLUTION: This active matrix type liquid crystal display device has transparent insulatable substrates 1, 1', insulatable light shielding layers 2 provided on the substrates, the TFT substrate 1 having thin-film transistors(TFTs) laminated and formed on the insulatable light shielding layer 2 and pixel electrodes 8 constituted of plural transparent electrodes, the counter substrate 1' facing the substrate and having the transparent electrodes on the transparent insulatable substrate and a liquid crystal layer held by the TFT substrate 1 and the counter substrate 1'. The TFTs are formed via the insulatable light shielding layers 2 consisting of inorg. compds. on the TFT substrate 1 and the circumferences of the pixel electrodes 8 are provided with the insulatable light shielding layers consisting of the inorg. compds.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a thin film transistor (TF).
The present invention relates to an active matrix type liquid crystal display device driven by an active element such as T).

[0002]

2. Description of the Related Art In a conventional TFT driving active matrix type liquid crystal display device, light leakage from other than pixel electrodes formed on the substrate (TFT substrate) side on which TFTs are mounted is formed on a substrate (color filter substrate) having a color filter. The black matrix (BM) is used to block light. Therefore,
In order to further reduce the power consumption of the liquid crystal display device, it is effective to improve the aperture ratio, that is, to widen the pixel electrode as much as possible, and for that purpose, it is necessary to make the width of the BM as small as possible.

[0003]

Alignment between the BM on the color filter substrate and the TFT substrate becomes difficult due to thermal expansion of both substrates as the liquid crystal screen size, that is, the substrate size increases. . Therefore, in the bonding process of the both substrates, the yield is lowered due to the defective alignment. Further, if the area of the overlapping portion of the BM and the pixel electrode is increased in order to obtain the alignment margin, the aperture ratio becomes smaller, and there is a trade-off relationship between the alignment margin and the aperture ratio.

In order to reduce the above-mentioned misalignment, BM containing a pigment dispersed and added in an organic polymer is added to TF.
A method of forming on a T substrate is proposed (S'Id '92
Digest pp. 789-792). Further, as an example of forming a light shielding film on a TFT, Japanese Patent Laid-Open No.
-27114 and JP-A-58-134476.

However, in order to form these on the TFT substrate side, a photo process for that is required, and there is a drawback that the number of steps is increased. Further, there is a problem that it is necessary to perform selective etching with the TFT element, which limits the choice of materials.

Further, since the organic polymer material has low heat resistance, it has a drawback that it cannot be annealed after BM formation.
Since the light-shielding layer needs to have a relatively large thickness, a step is generated on the surface of the TFT substrate, and reverse tilt of the liquid crystal in the pixel occurs, causing a problem that the contrast is inverted.

On the other hand, it is known to use a conductor such as a metal thin film for the light-shielding layer (JP-A-5-19297).
However, the metal thin film requires an insulating layer between the metal thin film and the electrode, and as a result, a parasitic capacitance is formed between the metal thin film and the electrode to affect the display image quality, and the manufacturing process becomes complicated. There is.

The object of the present invention is to solve the above problems,
Improve the yield based on the alignment of both substrates,
Another object of the present invention is to provide a TFT-driven active matrix type liquid crystal display device which has a high aperture ratio and is bright and has low power consumption.

[0009]

The gist of the present invention to achieve the above object is as follows.

A transparent insulating substrate, an insulating light-shielding layer provided on the substrate, a thin film transistor (TFT) laminated and formed on the insulating light-shielding layer, and a pixel electrode composed of a plurality of transparent electrodes are provided. Facing the TFT substrate,
An active matrix type liquid crystal display device comprising: a counter substrate having a transparent electrode on a transparent insulating substrate; and a liquid crystal layer sandwiched between the TFT substrate and the counter substrate.
T on the T substrate via an insulating light-shielding layer made of an inorganic compound
An active matrix type liquid crystal display device, characterized in that an FT is formed and an insulating light-shielding layer made of an inorganic compound is provided around the pixel electrode.

Further, a gate electrode or a drain electrode of the TFT may be laminated on the insulating light shielding layer.

An inorganic compound of a transition metal, particularly an oxide, is suitable for the insulating light-shielding layer. In order to achieve both the required specific resistance and the light-shielding property of the inorganic compound, a plurality of oxides having different absorption wavelength bands may be mixed and formed. As the compound having both the insulating property and the light shielding property, Ti,
V, Cr, Mn, Fe, Co, Ni, Zr, Zn, N
There is a transition metal oxide composed of at least one of b, Mo and W.

As the electrode material, Al, Ti, V, C
It is desirable to use a metal composed of at least one of r, Cu, Nb, Mo, Ta and W. In particular, CrO _X is preferable as the insulating light-shielding layer material, and Cr, Mo, or an alloy thereof is preferable as the electrode material.

Further, the required specific resistance value of the insulating light-shielding layer must be larger than the specific resistance value of the amorphous silicon layer of the semiconductor in order to prevent crosstalk between the gate wirings, but it is 1 × 10 ⁹ It is sufficient if it is μΩcm or more.

As the TFT formed on the transparent insulating substrate, a light-shielding semiconductor protective layer 14 made of the insulating light-shielding film is provided between a semiconductor layer and a contact layer, or a TFT is formed on the transparent insulating substrate. It may have an electrode laminated on the provided insulating light-shielding layer 2.

As a gate electrode of the TFT element, similar transition metals, that is, Ti, V, Cr, and so on, can be collectively etched with the same photomask together with the insulating light-shielding film.
It is preferable to be composed of at least one of Cu, Nb, Mo, Ta and W.

As the pixel electrode, indium tin oxide (ITO) usually used in liquid crystal display devices is used.
The sputtering thin film is used.

The counter substrate may be a substrate having a color filter (color filter substrate), or
The color filter substrate side may be configured as the light source side.

[0019]

In the TFT, an insulating light-shielding film made of a metallic inorganic compound and a gate electrode film made of a conductor are laminated,
The gate pattern is processed into a laminated state by etching, and only the insulating light-shielding film is left in the longitudinal (vertical) direction of the pixel electrode, that is, in the region parallel to the drain line. In the production and etching of the above film, in order to form the insulating light-shielding layer directly on the transparent (glass) substrate, it is necessary to consider the sputter damage to the TFT element and the etching selectivity with the material of the lower layer as in the past Therefore, the optimum material can be selected as the light shielding layer.

Further, it is possible to use a photomask for processing a TFT or a photomask for forming a pixel electrode portion without increasing the number of photomasks for directly forming the insulating light-shielding layer on the glass substrate.

Since the insulating light-shielding layer of the present invention is not electrically conductive like the light-shielding layer made of a metal thin film, it does not form a stray capacitance even if it exists in the lower layer of the drain line and does not increase the drain capacitance. . Therefore, it can be formed between the drain wiring and the pixel electrode over the entire length of the pixel electrode in the vertical direction.

Further, the alignment margin between the BM of the color filter and the pixel electrode can be reduced, and the width of the BM can be set correspondingly small, so that the aperture ratio can be improved.

Further, since the pixel electrodes are completely shielded in the longitudinal direction, there is no portion through which light is transmitted even if misalignment occurs between the TFT substrate and the counter substrate. No reduction in yield.

By using the insulating light-shielding film as the light-shielding semiconductor protective layer 14 on the semiconductor layer of the TFT, the channel region can be shielded from external light. It is not always necessary to form the BM on the counter substrate by the insulating light-shielding film and the channel passivation layer 13 provided under the gate electrode.

The light-shielding layer between the back surface of the gate electrode and the pixel electrode has a large light absorption coefficient, and its reflectance is several%. Therefore, when the TFT substrate is used facing toward the outside light, the reflection caused by the gate wiring and the drain wiring can be significantly reduced, so that the screen reflectance can be reduced and the visibility when used outdoors can be improved. There is also the effect of saying.

The number of photomasks can be reduced by collectively etching the gate wiring and the insulating light-shielding layer.

[0027]

【Example】

[Embodiment 1] One embodiment of the liquid crystal display device of the present invention is shown in FIG.
~ 4.

First, as shown in the schematic sectional views of FIGS. 1 and 3, an insulating light-shielding layer 2 of CrO _x (or an oxide to which a third element is added) and a gate electrode of Cr are formed on a glass substrate 1. 3 and 3 are laminated and formed. A CrO _x film having a thickness of 500 nm is formed by a sputtering method using a target of Cr ₂ O ₃ in Ar + O ₂ gas. Next, a 120 nm thick Cr film is formed using a pure Cr target.

Next, the gate electrode 3 is formed by photoetching.
After forming, the insulating light-shielding film in the portion where the pixel electrode 8 is formed is removed by photoetching. A top view of this state is shown in FIG.
Shown in Insulating light-shielding layer 2 and gate electrode 3 provided thereon
Thus, light is shielded so as to surround the pixel electrode formation portion.

Next, as shown in FIGS. 1 and 3, the gate insulating layer 4, the semiconductor layer 5, and the contact layer 6 are sequentially laminated by the CVD method.

FIG. 1 is a schematic cross-sectional view of the pixel electrode in the longitudinal direction. When the source / drain electrode 7 and the pixel electrode 8 are formed and processed, the pixel electrode 8 is formed as shown in FIG.
Is formed so as to be in contact with or overlap with the insulating light-shielding layer 2 within the alignment accuracy (α).

FIG. 4 shows a top view of the TFT substrate manufactured as described above, but it is possible to completely shield the pixel electrode 8 in the longitudinal direction (about three times the lateral length) and the TFT section 11. In addition, adjacent pixel electrodes 8 and 8 ′ on the TFT substrate 1
Since the insulating light-shielding layer 2 exists between them, there is a feature that light does not leak even if the alignment is slightly deviated. that time,
The short side (horizontal) direction of the pixel electrode is shielded by the additional capacitance section 12 and the source electrode 7. As a result, the periphery of the pixel electrode can be shielded completely.

The TFT substrate formed as described above and BM9
1 and the counter substrate 1'having the color filter 10 are aligned as shown in FIG. Since the aperture ratio is improved as the width of the BM 9 is smaller, the width of the BM 9 is set to be smaller than that of the insulating light shielding layer 2.
It is better to set the width to be equal to or slightly larger than the width. As a result, a constant aperture ratio can be realized. BM9
The aperture ratio is maximum when the width is the same as the width of the insulating light-shielding layer 2. Therefore, the deviation of the alignment is the decrease from the maximum aperture ratio.

The main roles of the BM 9 are to shield the TFT section 11 from light, mask areas where the light transmission characteristics are uneven at the edges of each color filter, and counter substrate 1 having a color filter. 'Is the display side of the liquid crystal display, the surface reflectance is reduced by using a low reflectance material as the BM.

FIG. 5 shows an example of improving the aperture ratio with respect to the overlapping width of the BM 9 of the color filter and the pixel electrode 8.

The normal overlapping width of the BM 9 and the pixel electrode 8 is 5
Although it is about μm, by reducing the overlapping width to almost zero (corresponding to the alignment accuracy) as in the present invention, the aperture ratio can be improved by about 10%, and the display brightness or the power consumption can be reduced by about 30%. Can be improved. In particular, the larger the area of the substrate, the smaller the alignment margin between the TFT substrate 1 and the counter substrate 1 ′ having the color filter, and the more easily the defect due to misalignment occurs, the present invention eliminates this defect. Can be

Further, since the insulating light-shielding layer 2 has a low surface reflectance, when the back surface of the TFT substrate 1 is used as the display surface, the surface reflectance can be greatly reduced. FIG. 6 shows the reflectance of the insulating light-shielding layer 2 measured from the outside of the TFT substrate 1.

As can be seen from FIG. 6, the surface reflectance can be reduced to about 6% in the wavelength range of 500 to 600 nm, which is the visible region, and thus the visibility of the liquid crystal display under external light is greatly increased. Can be improved.

Most of the reflectance of 6% is the surface reflection of the glass plate constituting the TFT substrate, and the surface reflection can be further reduced by applying an antireflection coating to the glass surface.

Example 2 In this example, a process for realizing the present invention will be described.

A Cr / CrO _x laminated film is formed in the same manner as in Example 1. Only the Cr film formed on the CrO _x film is etched to form the gate wiring. The etching is performed by a dry etching method using an etching gas of Cl ₂ + Ar + O ₂ .

FIG. 7 shows the O ₂ partial pressure of the etching gas,
It shows the relationship between the Cr film and the CrO _x film etch rate.

In order to obtain a sufficient selection ratio (Cr etch rate / CrO _x etch rate) for the CrO _x film,
Fe (or W) whose chloride vapor pressure is higher than that of Cr
Is a result when Cr is added to the CrO _x film. Since the Cr film has a selection ratio about 4 times that of the CrO _x film,
The Cr film is etched to form the gate electrode 3.

In FIG. 1 or FIG. 3, after the gate electrode 3 is formed, the gate insulating layer 4, the semiconductor layer 5 and the contact layer 6 are formed into a SiN film and ia-Si, respectively, by a plasma CVD method.
The film is an n + -a-Si film.

Next, the CVD of the portion where the pixel electrode 8 is formed is performed.
The film is dry etched using SF ₆ etching gas. Here, using the same photomask, the CrO _x film was replaced with Cl ₂
Dry etching is performed using + O ₂ gas, or wet etching is performed with an aqueous solution of cerium ammonium nitrate. By etching using the same photomask,
As shown in FIG. 1 or FIG. 3, the through hole of the pixel electrode formation portion of the gate insulating layer 4 can be etched with the same photomask pattern without requiring an extra photolithography process.

As shown in FIG. 1 or FIG. 3, since the insulating light-shielding layer 2 is disposed under the TFT portion 11, the photomask for the through hole forming the pixel electrode portion can be shared for the processing, and therefore, It is not necessary to increase the number of extra photomasks and photolithography steps.

Next, a Cr film is formed as the source and drain electrodes 7 by the sputtering method, and then photoetching is performed. At that time, in order to ensure selectivity with the CrO _x film,
Dry etching is performed with CCl ₄ + Ar etching gas.

When a Mo film is used as the gate electrode 3 or the source / drain electrodes 7, the wet etching method is used. By using a mixed acid (PAN) composed of phosphoric acid, nitric acid, acetic acid, and water as the etchant, the selectivity with respect to the CrO _x film can be secured.

Next, as the pixel electrode 8, indium tin oxide (ITO) is formed by a sputtering method and processed by photoetching. TFT with the same photomask
The channel region Cr (or Mo) may be etched again. Furthermore, with the same photomask, n + -a-Si
The film is etched with SF ₆ gas to form a channel region. A SiN film is formed as the channel passivation layer 13 by a plasma CVD method, and the terminal portion is exposed by dry etching.

By using the photoetching process as described above, the TFT substrate provided with the insulating light-shielding layer 2 can be manufactured with five photomasks. Thereby, a simple and bright liquid crystal display with a high aperture ratio can be provided by a simple manufacturing method.

Example 3 As the insulating light-shielding layer 2, a ferrite film in a transition metal oxide was used. That (M
The specific resistance of n, Zn) O, (Ni, Zn) O is 10 ¹² μΩ
cm has sufficient insulation and its transmittance is 300
It is 1% or less in nm and has a sufficient light-shielding property.

The above ferrite film is more difficult to dry-etch with a Cl-based gas than the CrO _x film. Therefore,
A carbon dioxide compound of a transition metal is formed using CO gas, and etching is performed. The dry etch rate was 3-5 nm / min. On the other hand, the ion milling method using Ar gas provided an etch rate of 10 nm / min.

Regarding the optical characteristics of the light-shielding film as the insulating light-shielding layer 2, the refractive index n is 1 to 2 and the light absorption coefficient k is 0.05 to 0.5.
Should be fine. When the refractive index n exceeds 2, the reflectance of the film surface becomes large, so that the reflection becomes large. In particular, when using the TFT substrate facing the front, n is 2
It is necessary to keep it below. Further, when the light absorption coefficient k is small, the transmittance can be reduced by increasing the film thickness.

[Embodiment 4] As a switching element,
A case where a positive stagger TFT is used is shown in FIG.

The insulating light-shielding layer 2 formed on the transparent insulating substrate 1 is formed so as to cover the periphery of the pixel electrode 8.

Next, an ITO film which also serves as the source / drain electrode 7 and the pixel electrode 8 is formed. The contact layer 6, the semiconductor layer 5, the gate insulating layer 4 and the gate electrode 3 are respectively formed as an n + -a-Si film, an ia-Si film, a SiN film and an Al film. These are processed by a photomask pattern for forming the gate electrode 3. Finally, a SiN film is formed as the channel passivation layer 13. As a result, a positive staggered TFT having a light shielding structure can be manufactured with four photomasks.

Conventionally, the positive stagger TFT has a photosensitivity a.
Since the Si layer is exposed to light in the channel region, the channel region is shielded from light by forming an extremely thin semiconductor layer so as to reduce the sensitivity, or by forming two layers of a metal thin film and an insulating film such as SiN film. Had to do.

However, according to the present invention, the insulating light-shielding layer 2
Since the channel region can be shielded by only one layer, the manufacturing process can be simplified. Moreover, since the semiconductor layer 5 can be formed relatively thick, there is no reduction in the field effect mobility of the TFT that occurs when the semiconductor layer is formed thin.

A case where a metal having a low specific resistance value, such as Al or Cr, is used for the source and drain electrodes 7 in order to set the drain wiring resistance to a lower resistance value will be described with reference to FIG.

An insulating light-shielding film and a film for source and drain electrodes are formed respectively, and first, the source and drain electrodes 7 are processed. Next, the insulating light-shielding film is processed to form the insulating light-shielding layer 2
To form

Next, the contact layer 6, the semiconductor layer 5, the gate insulating layer 4 and the gate electrode 3 are respectively n + -a-Si.
It is formed of a film, an ia-Si film, a SiN film and an Al film.

Next, the pixel electrode 8 is formed from the ITO film, and finally the channel passivation layer 13 is formed to remove only the terminal portion by etching.

With the above structure, a TFT substrate having a light-shielding structure can be manufactured with five photomasks. In addition, ITO
By leaving the film on the terminal portion, the connection reliability between the terminal and the external circuit can be improved.

When a positive staggered TFT is used, the semiconductor layer 5
Since the insulating light-shielding layer 2 and the gate electrode 3 can shield light from above and below, it is not necessary to provide the BM on the counter substrate 1'as shown in FIG. Therefore, it is possible to reduce the photo etching process of the BM.

According to the present invention, in order to provide a light-shielding layer under the TFT element, a TFT other than the positive stagger structure TFT, for example,
It can also be applied to an active matrix type liquid crystal display device of a switching element such as a coplanar structure TFT or a diode.

[Embodiment 5] An insulating light-shielding film can be used as a channel passivation layer as well as being laminated on a gate wiring.

As shown in FIG. 11, C as in the first embodiment.
After forming the gate insulating layer 4 and the semiconductor layer 5 by the VD method, a light-shielding channel passivation layer 14 is formed by using an insulating light-shielding film.
To form In this case, the gate insulating layer 4 is used as the light-shielding film.
An insulating light-shielding film having a specific resistance equivalent to that of is used.

Next, the contact layer 6 is formed. After that, a TFT substrate is manufactured in the same manner as in Example 1. Then, it is aligned with the counter substrate 1'having a color filter.

The insulating light-shielding layer 2 shields the space between the adjacent pixel electrodes 8 and 8 ', which also serves as the BM. Further, by shielding the outside of the channel region of the TFT with the light-shielding channel passivation layer 14,
The function of BM can be imparted to the insulating light-shielding layer 2, and the manufacturing process of the counter substrate 1 ′ can be shortened.

In the case of the channel passivation method, a photomask for processing the light shielding channel passivation layer 14 is required. As a result, a total of 6 photomasks (one more than in Example 2) are required. Therefore, although the number of manufacturing steps is increased, it is not necessary to set the etching tolerance of the contact layer 6. Therefore, the semiconductor layer 5 is made as thin as possible to reduce the on-resistance and improve the mobility of the TFT by 20 to 30%. Can be made.

Further, since it is not necessary to provide the BM on the counter substrate 1'having the color filter, as a whole,
It can be manufactured with the same number of photomasks as in the channel etching method without providing the channel passivation layer.

[0072]

According to the present invention, by providing the insulating light-shielding layer on the TFT substrate, it is not necessary to set the alignment margin between the TFT substrate and the color filter, so that a high aperture ratio and low power consumption are achieved. The active matrix type liquid crystal display device can be manufactured.

Further, it is possible to improve the yield due to poor alignment of the upper and lower substrates of the liquid crystal cell.

[Brief description of drawings]

FIG. 1 shows a cross-sectional view in a lateral (short) direction of a pixel portion of the present invention.

FIG. 2 shows a top view of the present invention.

FIG. 3 is a sectional view of a TFT section and an additional capacitance section of the present invention.

FIG. 4 shows a top view of the present invention.

FIG. 5 is a diagram showing a relationship between an alignment margin between a black matrix of a color filter and a pixel electrode and an aperture ratio.

FIG. 6 shows the relationship between the alignment margin and the aperture ratio according to the present invention.

FIG. 7 shows the etch rates of the electrode and the light-shielding film of the present invention.

FIG. 8 is a sectional view of a TFT section and an additional capacitance section of the present invention.

FIG. 9 is a cross-sectional view of a TFT section and an additional capacitance section of the present invention.

FIG. 10 shows a cross-sectional view of the pixel portion of the present invention in the lateral (short) direction.

FIG. 11 is a cross-sectional view of a TFT section and an additional capacitance section of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Transparent insulating substrate, 2 ... Insulating light-shielding layer, 3 ... Gate electrode, 4 ... Gate insulating layer, 5 ... Semiconductor layer, 6 ... Contact layer, 7 ... Source, drain electrode, 8 ... Pixel electrode, 9 ... Black Matrix, 10 ... Color filter, 11 ... TF
T portion, 12 ... Additional capacitance portion, 13 ... Passivation layer,
14 ... Light-blocking channel passivation layer.

Front page continuation (72) Inventor Kenichi Onizawa 7-1, 1-1 Omika-cho, Hitachi City, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Tetsuro Minemura 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi, Ltd., Hitachi Research Laboratory

Claims (7)

[Claims] 1. A pixel electrode composed of a transparent insulating substrate, an insulating light-shielding layer provided on the substrate, a thin film transistor (TFT) laminated and formed on the insulating light-shielding layer, and a plurality of transparent electrodes. A TFT substrate having, and a counter substrate facing the TFT substrate and having a transparent electrode on a transparent insulating substrate,
In an active matrix liquid crystal display device comprising a liquid crystal layer sandwiched between the TFT substrate and a counter substrate, a TFT is formed on the TFT substrate via an insulating light-shielding layer made of an inorganic compound, and the pixel electrode An active matrix type liquid crystal display device, characterized in that an insulating light-shielding layer made of an inorganic compound is provided on the periphery of. 2. A pixel electrode composed of a transparent insulating substrate, an insulating light-shielding layer provided on the substrate, a thin film transistor (TFT) laminated and formed on the insulating light-shielding layer, and a plurality of transparent electrodes. A TFT substrate having, and a counter substrate facing the TFT substrate and having a transparent electrode on a transparent insulating substrate,
In an active matrix liquid crystal display device comprising a liquid crystal layer sandwiched between the TFT substrate and a counter substrate, a TFT is formed on the TFT substrate via an insulating light-shielding layer made of an inorganic compound, and the pixel electrode An active matrix type liquid crystal display device, characterized in that an insulating light-shielding layer made of an inorganic compound is provided in the periphery of the substrate, and the gate electrode or drain electrode of the TFT is directly laminated on the insulating light-shielding layer. . 3. The insulating light-shielding layer comprises Ti, V, Cr,
Mn, Fe, Co, Ni, Zr, Zn, Nb, Mo, T
The active matrix liquid crystal display device according to claim 1 or 2, which is made of a transition metal oxide selected from at least one of a and W. 4. The gate electrode of the TFT is made of Ti, V,
3. The active matrix type liquid crystal display device according to claim 1, comprising a thin film of a metal selected from Cr, Cu, Nb, Mo, Ta and W or an alloy thereof. 5. The gate electrode of the TFT is Cr, Mo or an alloy thereof, and the insulating light-shielding layer is CrO _x.
3. A thin film containing as a main component.
4. The active matrix type liquid crystal display device according to item 1. 6. The insulating light-shielding layer has a conductivity of 1 × 10 ⁹
The active matrix type liquid crystal display device according to claim 1, which has a μΩcm or more. 7. The active matrix liquid crystal display device according to claim 1, wherein the counter substrate has a color filter.