JPH09263934A - Film formation method and device thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide film formation method to be capable of measuring precise film thickness simultaneously with the film formation and a device thereof, relating to the film formation method forming the film on a base material by the physical vapor deposition method and the device thereof. SOLUTION: At the time of film formation on the film forming base material 14 by the physical vapor deposition, a film thickness measuring method comprises the step that continuous sending motion to the same direction is carried out, arranging a film thickness measuring, base material different from the film forming base material under the same atmosphere with the film formation on the film formation base material 14, and the step that the thickness measurement is carried out in the film formed on the thickness measuring base material by a film thickness measuring device A. The film thickness measuring device A consists of a film forming base material-feeding mechanism, guiding mechanism guiding to film formation region, film forming base material feeding/recovery means having a recovery mechanism recovering after film formation, the film formation device body B having a film material feed source D to feed feeding film material 13 onto the film formation base material led to a prescribed region to be capable of film formation and to form the film onto the film forming base material surface, and film thickness measuring means arranged within a moving region of film material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method for forming a film on a substrate by a physical or chemical vapor deposition method such as a vapor deposition method, an ion plating method, a sputtering method and an ion beam vapor deposition method, and an apparatus therefor. In addition, the present invention relates to a film forming method and a film forming apparatus that enable accurate film thickness measurement simultaneously with film formation.

[0002]

2. Description of the Related Art In a film forming process for forming a film on a film forming substrate, the state of film formation changes from moment to moment. Therefore, it is required to observe the information on the characteristics of the formed film and to form the desired film while controlling the film forming conditions to be optimal (hereinafter referred to as monitoring) based on the observed data. ing.

By the way, various methods for monitoring the film thickness of a film formed on a film-forming substrate or being formed are being studied. Especially in the field of vacuum film formation, in addition to the substrate on which the film is to be formed, a quartz crystal oscillator for monitoring is installed in the film formation chamber, and the frequency change due to the film being attached to the surface A method of estimating the film thickness of a film formed on a base material, and a method of installing a monitor plate provided with a shield plate with holes for partial film formation separately from the base material on which the film is to be formed (Patent Document 1) 7-63671), in a roll-up film forming method in which a base material is continuously supplied, when a polymer film or the like is used as the base material, the film thickness is specified from the change in the optical characteristics of the base material. Methods, etc. are considered.

However, in the means of the preceding paragraph, when films are continuously formed, a film having an extremely thick film thickness is formed on the crystal unit, and the limit of continuous measurement time is short. It has the serious drawback of being overkill.

The means described in the preceding paragraph is similar to the means of
In the case of continuous film formation, there is a serious drawback that the measurement time limit is too short. Further, since the area of the monitor board is large, there is a big problem in terms of space.

The means of the preceding paragraph is to directly monitor the substrate on which the film is to be formed. For monitoring by optical characteristics, the refractive index of the film and the base material formed in advance in the measuring device, and the thickness of the base material are input as data, and then light for measurement is incident on the film to measure the film and the base material. The transmitted or reflected light transmitted or reflected is measured, and the phase difference between this and the transmitted or reflected light when light is incident only on the substrate is obtained, and the film thickness is measured by this. Therefore,
It is possible to measure the film thickness values that are almost similar. However, when trying to measure the film thickness of multiple layers, layers having different refractive indices are complicatedly refracted, and transmitted light or reflected light of light that repeats reflection is measured, and the actual film thickness and the An error occurs in the value of the film thickness measured by inputting the refractive index corresponding to the layer into the measuring device. While repeating this, that is, each time the number of layers is increased, errors accumulate and are amplified, the difference between the actual film thickness and the measured value becomes large, and the reliability of the measured value decreases.

Further, even in the case of a single layer film, when the film is very thin as compared with the thickness of the substrate and has a refractive index substantially the same as that of the substrate, the light entering the substrate from the film is substantially straight. However, it becomes difficult to measure the characteristics due to refraction when light enters the substrate from the film, and it is extremely difficult to monitor by measuring the optical characteristics. Monitoring is also very difficult when a conductive film is formed on a conductive base material and the electrical characteristics are to be monitored. Further, since the film on the substrate is directly measured, there is a problem that the film may be affected.

[0008]

SUMMARY OF THE INVENTION The present invention has been made by paying attention to the above problems, and does not adversely affect the film to be formed by monitoring and continuously forms a film for a long time. It is possible to measure the film thickness of the process, and even when forming a multilayer film, the information that can optimize each layer can be monitored without amplifying the error in the information to be monitored. Furthermore, the base material is appropriately selected for monitoring. As a result, even if the refractive index of the film to be formed is almost the same as that of the film to be formed, the optical characteristics can be monitored, and a conductive film is similarly formed on the conductive substrate. An object of the present invention is to provide a film thickness measuring method in a vacuum film forming method, which has a sufficiently considered configuration and can be monitored by electric characteristics even in the case.

[0009]

In order to solve the above-mentioned problems, the film forming method of the first invention is a predetermined film forming substrate capable of forming a film by a physical or chemical vapor deposition method. At the same time as guiding the film to form a film on the film-forming substrate, the film material for supplying the film material to be formed on the film-forming substrate moves to a predetermined position where the film can be formed on the film-forming substrate. In the film material moving region, the film thickness measurement base material is passed continuously and in the same direction, and after film formation on the film thickness measurement base material,
It is characterized in that the thickness of the film formed on the film thickness measuring substrate is measured by a film thickness measuring means.

The film forming method of the second invention is the same as the film forming method of the first invention, but when a multi-layer film is formed on the film forming substrate, the film of each layer is separately formed on the film thickness measuring substrate. It is characterized in that the film thickness is measured by forming a single layer in the region (1), measuring the film thickness of each layer separately, and calculating the total.

Further, the film forming apparatus of the third invention comprises a film forming base material supplying mechanism for supplying a film forming base material, a guiding mechanism for guiding the film forming base material to a region where a film is formed, and the film forming base material. Membrane-forming substrate supply / collection means having a film-forming substrate collecting mechanism for collecting after formation of a film on the substrate, and a film formed on the film-forming substrate guided to a predetermined region capable of forming a film by a physical or chemical vapor deposition method. A film material supply source for supplying a film material for forming is a film forming apparatus main body separated from the film forming base material supplying / recovering means, and a film thickness measuring substrate for supplying a film thickness measuring base material. Material supply mechanism, in order to form a film on the film thickness measuring base material, the film thickness measuring base material is a film between the guiding mechanism of the film forming base material supplying / recovering means and the film material supply source. Film thickness measuring base material guiding mechanism for guiding into the material movement region, film thickness for measuring the film thickness after forming a film on the film thickness measuring base material Comprising a constant section, characterized in that it consists of a film thickness measuring apparatus for performing thickness measurement while feeding the film thickness measurement substrate continuously and in the same direction.

The present invention will be described in detail below with reference to the drawings.
1 and 2 are schematic views showing an example of an apparatus capable of forming a film by the film forming method of the present invention. FIG. 1 shows film forming by a vacuum deposition method, and FIG. 2 shows film forming by a sputtering method. It is a device that does. Further, FIGS. 3, 4, 5, and 6 are schematic views showing respective means for measuring the film thickness. Here, the film forming method is suitable for a physical vapor deposition method represented by a sputtering method, an ion plating method, a vacuum vapor deposition method, an ion beam vapor deposition method, or a chemical vapor deposition method such as CVD. Further, either a continuous film forming method or a batch film forming method may be used.

The film forming base material 14 is preferably a polymer film base material such as polyethylene terephthalate, polycarbonate, polyarylate, polyether sulfone or triacetyl cellulose, or a glass base material, but may be made of other materials. I do not care. The thickness is 10 μm to 200 μm.
The range of m is preferable, and the range of 50 μm to 100 μm is particularly preferable.

The film material moving region 11 is a film material supply source 13.
Thus, when the film material is scattered on the film forming base material 14 to form a film, the scattered film material is an area where the film material moves to the film forming base material 14. It is preferable that this region is a vacuum space because the movement of the film material will be efficient and uniform, but it may be essential to fill the tank with an inert gas depending on the film forming method. It is not limited to. However, even if it is not a vacuum, it is necessary that the space has a fairly low air density.

The film thickness measuring substrate 4 is the film forming substrate 1.
In order to measure the thickness of the film formed on No. 4, the same film as the film formed on the film forming base material 14 is formed under the same conditions, and the film forming substrate is measured by measuring this film thickness. The film thickness formed on the material 14 is measured. The material of the film thickness measuring substrate 4 is
Considering the case where the film thickness is measured using the optical characteristics, a polymer film of polyethylene terephthalate, polycarbonate, polyarylate, polyether sulfone, triacetyl cellulose or the like is suitable. However, in the case of measurement based on optical characteristics, if a material having the same refractive index as the film material is selected as the film thickness measuring base material 4, the measurement becomes impossible. Therefore, it is necessary to select materials having different refractive indexes. Further, also in the case of measurement by electric characteristics, if a conductive material is selected for the film thickness measurement base material 4, the measurement becomes impossible. Therefore, also in this case, it is necessary to select a non-conductive material.

In the film thickness measuring method, the film thickness measuring base material 4 is continuously fed in the same direction in the film material moving region 11 to form a single layer film on the film thickness measuring base material 4. The film thickness is measured by a method such as a light transmission type, a resistance measurement type, a light reflection type, or a combination of the light transmission type and the resistance value measurement type, or a combination of the light reflection type and the resistance value measurement type. Of these, the light transmission type is
It is suitable for measuring the film thickness of a transparent film, the resistance measurement type is suitable for measuring the film thickness of a conductive film, and the combined type is suitable for measuring the film thickness of a transparent conductive film. When measuring the film thickness of the multilayer film, the film thicknesses measured in the single layer are added together.
Since the film measured by this method is always a single layer, accurate film thickness measurement is possible.

The film thickness measuring method of the present invention is the film forming substrate 1
A single layer film is formed on the film thickness measurement base material 4 under the same conditions as the film formation on the film No. 4, and the film thickness is measured by an arbitrary measuring means. The thickness of the film formed on the film thickness measuring base material 4 need not be equal to the thickness of the film on the film forming base material 14,
Depending on the film formed on the film-forming substrate 14, that is, the film formed on the film-forming substrate 14 is too thick or too thin,
When there is a problem in measuring the film thickness, the conditions for film thickness measurement may be appropriately changed. The film thickness at that time can be changed by changing the feed rate of the film thickness measuring base material 4.

A film forming apparatus which enables the film forming method of the present invention will be described below with reference to FIGS. 1 and 2. A film forming apparatus that enables the film forming method of the present invention includes a mechanism for supplying a film forming base material 14, a guiding mechanism for guiding a film forming region,
Further, the film forming base material supplying / recovering means C having a mechanism for recovering after the film formation, supplies the film material to the film forming base material 14 guided to a predetermined area where the film can be formed, and supplies the film material to the surface of the film forming base material 14. A film forming apparatus main body B having a film material supply source D for forming a film, and a film thickness measuring means A arranged in a film material moving region 11 between the guiding mechanism and the film material supply source 13 for supplying the film material. Consists of.

The film forming apparatus main body B comprises a film forming substrate supply / recovery means C and a film material supply source D. The film forming base material supplying / recovering means C serves as a film forming base material supplying mechanism for supplying the film forming base material 14, and serves as a film forming base material guiding mechanism for guiding the unwinding roll 8 and the film forming base material 14 to a film forming region. A main roll 10 and a take-up roll 9 as a film-forming base material collecting mechanism for taking up the film-formed base material 14 are provided, and the film-forming base material 14 is unwound from the unwinding roll 8 and then the main roll. 10 is rotated, and finally it is wound up by the winding roll 9.

Here, the unwinding roll 8 is a roll for supplying the film forming base material 14, the film forming base material 14 is wound, and is rotated at the start of film formation on the film forming base material 14. . Further, the main roll 10 is located substantially below the unwinding roll 9, guides the film forming base material 14 to a region where a film is formed, and is a roll for forming a stable film.
The roll diameter is preferably larger than that of the unwinding roll 8 and the winding roll 9 to be described later, which enables stable film formation. The winding roll 9 is a roll that winds up the film-forming base material 14 on which the film has been formed. The film material supply source D is a device for supplying a film material when forming a film by scattering the film material on the film forming base material 14 by a physical vapor deposition method. The film forming apparatus B is entirely covered with a vacuum container 15.

As shown in FIGS. 3, 4, 5 and 6, the film thickness measuring means A comprises a feed roll 1, a main roll 3 and a winding roll 2, and the film thickness sent out from the feed roll 1. The measurement base material 4 is wound around the winding roll 2 via the main roll 3. Here, the main roll 3 is a roll that guides the film thickness measuring base material 14 into the film material moving region 11, and while the film thickness measuring base material 14 is rotating the main roll 3 or before or after the main roll 3. A film for film thickness measurement is formed. Between the main roll 3 and the take-up roll 2, a light transmission type 5 (FIG. 3), a resistance value measurement type 6 (FIG. 4), a light reflection type 7 (FIG. 5), a light transmission type 5 and a resistance value measurement. Film thickness measuring machines 5, 6, 7 such as combined use with the mold 6 (FIG. 6) are provided, and the film thickness of the film formed by this is measured. The film thickness measuring means A is sufficiently smaller than the film forming base material 14 and does not affect the film formation on the surface of the film forming base material 14. further,
When the film thickness measurement base material 4 is thermally affected by film formation, a cooling mechanism may be provided in the film formation portion of the film thickness measurement base material 4 as necessary.

The film material supply source D is a device that scatters the material for forming a film on the surface of the film forming base material 14 and the film thickness measuring base material 4 so as to adhere to the surface of the film forming base material 14. In vacuum deposition, the film material is scattered by heating and evaporation.In the ion plating method, the evaporated atoms of the film material heated and evaporated are ionized in the glow discharge, and these are scattered to the negatively applied film forming substrate, and the sputtering method. Is a film material in which a small amount of an inert gas such as argon and, if necessary, a reactive gas such as oxygen is flown into the tank, a voltage of several hundred volts is applied to cause a glow discharge, and the inert gas ions are negatively applied. To cause the film material to fly toward the surface of the film-forming substrate.

In order to make the film thickness of the film formed on the film forming substrate 14 more optimal (closer to the target value), the data obtained from the film thickness measuring device A is always fed back to the film forming device B. There is a need. Therefore, based on the obtained data, a person adjusts the feeding speed of the film forming substrate 14 of the film forming apparatus B and the supply amount of the film material. Alternatively, the film-thickness of the film-forming substrate 14 is further optimized by electrically connecting the film-thickness measuring device A and the film-forming device B and incorporating a feedback control circuit therein for adjustment.

With the above structure, at least the main roll 3 of the film thickness measuring means A is located in the film material moving region 11 and the film thickness measuring substrate 4 is continuously and fed in the same direction to measure the film thickness. A film is formed on the substrate 4 for use. Then, a film formed under the same conditions as the film formed on the film forming base material 14 can be obtained on the surface of the film thickness measuring base material 4.
Therefore, by measuring this film, the film-forming substrate 14
It is possible to measure the film thickness of the film formed on the substrate.

The operation of the film thickness measuring device will be described with reference to the flowchart shown in FIG. First, the feeding of the unwinding roll 1 of the monitoring device A is started, and the feeding of the film thickness measuring substrate 4 is started. The film thickness measuring substrate 4 is wound around the winding roll 8 via the main roll 3. After that, the unwinding roll 9, the main roll 10 and the winding roll 8 of the film forming apparatus are driven to start the feeding of the film forming substrate 14. At the same time, the feeding of the film forming material 12 is started, and the film is formed on the film forming base material 14 below the main roll 10. In addition, the film forming material 12 includes
It also adheres to the film thickness measuring substrate 4 below the main roll 3. The film thickness measuring base material 4 which has passed through the main roll 3 is, before being wound up by the winding roll 2, a light transmissive sensor 5 for film thickness measurement as shown in FIG. 2, FIG. 3 and FIG. The film thickness is measured by the characteristic measuring sensor 6, the light reflection type sensor 7 and the like. The obtained data of the film thickness is compared with the target film thickness value input in advance, and when it is deviated from the value, the feeding speed of the film forming base material 14 is made to approach the value,
The feed amount of the film forming material 12 and the like are adjusted for the film forming apparatus B by a feedback control circuit (not shown), manually, or the like. In this way, the film of the first layer is formed, and thereafter, the film formation from the second layer to the final layer is repeated in the same manner.

[0026]

Example 1 Polyethylene terephthalate having a thickness of 50 μm was used as a film forming base material, and TiO ₂ / S was formed by a winding EB vapor deposition method.
3-layer film of iO ₂ / TiO ₂ was formed. A plurality of evaporation materials are set at one time and selected while keeping a vacuum. The monitor adopts the configuration shown in FIG. 1, and the film thickness measuring substrate is
Even if a 25 μm-thick polyethylene terephthalate film is continuously wound in a certain direction to form a multi-layer film on the film-forming substrate, a single-layer film is always formed on the film-thickness measuring substrate, and the characteristics of the film during vapor deposition are I was able to monitor it. The light transmittance was used for the monitoring, and the film was formed while the result of the monitoring was immediately fed back to the film forming condition. Table 1
The target value and the actually formed value are shown for the nd (optical film thickness) of the formed three-layer film. Since it is possible to provide the film thickness measuring base material separately from the base material for forming the film and constantly monitor only the layer being formed, it can be seen that the value is extremely close to the target value.

[0027]

[Comparative Example 1] Polyethylene terephthalate having a thickness of 50 μm was used as a film forming base material, and TiO ₂ was formed by a winding EB vapor deposition method.
A three-layer film of / SiO ₂ / TiO ₂ was formed. Light transmittance was used for monitoring, and the film on the film-forming substrate was directly monitored. The results of the monitoring were immediately fed back to the film forming conditions to form the film. Table 1 shows target values and actually deposited values of nd (optical film thickness) of the formed three-layer film. Comparing with Example 1, it is understood that the error of each layer is amplified because the film thickness measuring base material is not separately provided, and the error of the actual value with respect to the target value is large. Table 1 shows the results measured by the methods of Example 1 and Comparative Example 1.

[0028]

[Table 1]

[0029]

Example 2 A 50 μm thick polyethylene terephthalate (refractive index n to 1.7) was used as a base material for forming a film, and an Al ₂ O ₃ (n to 1.7) film was formed by a winding EB vapor deposition method. did. The monitor adopts the configuration of FIG. 1, the substrate for film thickness measurement is TAC (n to 1.5) having a thickness of 50 μm, and the film is continuously wound in a fixed direction. The light transmittance was used for the monitoring, and the film was formed while the result of the monitoring was immediately fed back to the film forming condition. Table 2 shows the formed Al ₂ O ₃
Regarding the nd of the film, the target value and the value actually formed are shown. It can be seen that the value is extremely close to the target value.

[0030]

Comparative Example 2 Polyethylene terephthalate (refractive index n to 1.7) having a thickness of 50 μm was used as a base material for forming a film, and an Al ₂ O ₃ (n to 1.7) film was formed by a winding EB vapor deposition method. did. For the monitoring, the film on the substrate was directly monitored using the light transmittance, and the film was formed while the monitoring result was immediately fed back to the film forming conditions. Table 2 shows target values and actually deposited values of nd of the formed Al ₂ O ₃ film. It can be seen that the difference from the target value is very large as compared with the second embodiment. From the results of Example 2 and Comparative Example 2, by providing a film thickness measuring substrate separately, an appropriate film thickness measuring substrate can be selected according to the film to be formed, so that the monitoring accuracy is dramatically improved. It can be confirmed that Table 2 shows the results measured by the methods of Example 2 and Comparative Example 2.

[0031]

[Table 2]

[0032]

Example 3 Using polyethylene terephthalate (refractive index n to 1.7) having a thickness of 50 μm as a base material for forming a film, a two-layer film of Al and SiO ₂ was formed by a winding EB vapor deposition method. 1 and 2 were adopted as the monitor, 25 μm polyethylene terephthalate was used as the substrate for measuring the membrane pressure, and the film was continuously wound in a fixed direction. For monitoring,
Resistivity measurement was used for the Al layer and light transmittance was used for the SiO ₂ layer. The results of the monitoring were immediately fed back to the film forming conditions to form the film. Further, the winding speed of the film thickness measurement base material is adjusted so that the measurement sensitivity of the resistance value of the Al film formed on the film thickness measurement base material becomes the best, and the adjustment amount is also taken into consideration to set the target value. The film thickness formed on the substrate was monitored. Table 3 shows the target values and the values of actually formed films for the thickness of the formed film. It can be seen that the value is extremely close to the target value.

[0033]

Comparative Example 3 A two-layer film of Al and SiO ₂ was formed by a winding EB vapor deposition method using polyethylene terephthalate (refractive index n to 1.7) having a thickness of 50 μm as a base material for forming a film. For the monitoring, the film on the substrate forming the film was directly monitored, and the resistivity was measured and the light transmittance was used to form the film while immediately feeding back the monitoring result to the film forming conditions. Table 3 shows target values and actually deposited values for the thickness of the formed film. Since the first layer of Al has a thick Al film to be formed, it is very difficult to monitor the resistance value. Monitoring of the SiO ₂ film of the second layer was impossible because the light transmittance of the Al layer of the first layer was extremely low. Table 3 shows the results measured by the methods of Example 3 and Comparative Example 3.

[0034]

[Table 3]

[0035]

Example 4 Polyethylene terephthalate (refractive index n to 1.7) having a thickness of 75 μm was used as a substrate for forming a film, and ITO (In ₂ O ₃ + SnO (5w) was formed by a sputtering method.
t%)) was formed. As the substrate for measuring the film pressure, polyethylene terephthalate having a thickness of 25 μm was used and the film was continuously wound in a fixed direction. For monitoring, resistance measurement and light transmittance were used. The results of the monitoring were immediately fed back to the film forming conditions to form the film. The winding speed of the monitoring base material was adjusted so that the resistance measurement sensitivity was maximized, and the film thickness formed on the target base material was monitored in consideration of the adjustment amount. Table 4 shows target values, electric resistance values, and actually deposited values for the thickness of the formed film. It can be seen that the value is extremely close to the target value.

[0036]

Comparative Example 4 Polyethylene terephthalate (refractive index n to 1.7) having a thickness of 75 μm was used as a substrate for forming a film, and ITO (In ₂ O ₃ + SnO (5w) was formed by a sputtering method.
t%)) was formed. Monitoring is performed by directly measuring the resistance value or light transmittance of the film on the base material forming the film,
It was monitored. The results of the monitoring were immediately fed back to the film forming conditions to form the film. Table 4 shows the thickness of the formed film and the electric resistance value. In a transparent conductive film such as ITO, performance of both light transmittance and resistance value is important, so there is a problem in matching with either, and it has not been possible to obtain a good performance. . Table 4 shows the results measured by the methods of Example 4 and Comparative Example 4.

[0037]

[Table 4]

[0038]

According to the film thickness measuring device of the present invention, the film thickness measuring base material is provided separately from the base material for forming the film. Therefore, the film on the base material to be formed is not adversely affected by the monitoring. Do not give. In addition, by using a film thickness measurement substrate such as a film and continuously supplying the film thickness measurement substrate by a winding method, etc., it is possible to monitor for a long continuous film forming process. become. Moreover, since the base material for film thickness measurement is continuously supplied, even when a multilayer film is formed, it is possible to monitor information that can optimize each layer without amplifying an error in information to be monitored. Furthermore, even if the refractive index of the film to be formed is almost the same as that of the film to be formed when monitoring the optical properties, it is also possible to form an electrically conductive film on the electrically conductive substrate and This is a film thickness measuring device capable of monitoring the characteristics of a film to be formed by appropriately selecting a film thickness measuring base material even when it is desired to monitor.

[0039]

[Brief description of drawings]

FIG. 1 is a schematic view showing a film forming apparatus of the present invention when forming a film by a vapor deposition method.

FIG. 2 is a schematic view showing a film forming apparatus of the present invention when forming a film by a sputtering method.

FIG. 3 is a schematic diagram showing a film thickness measuring device used for film thickness measurement of the film forming device of FIG. 1, which measures film thickness by transmitted light.

FIG. 4 is a schematic view showing a film thickness measuring device used for film thickness measurement of the film forming device of FIG. 1, which measures film thickness by resistance value measurement.

5 is a schematic view showing a film thickness measuring device used for film thickness measurement of the film forming device of FIG. 1, which measures film thickness by reflected light.

FIG. 6 is a schematic diagram showing a film thickness measuring device used for film thickness measurement of the film forming device of FIG. 2, which measures film thickness by combined use of transmitted light and resistance value measurement.

FIG. 7 is a flowchart illustrating the operation of the film forming apparatus equipped with the monitor of the present invention.

[Explanation of symbols]

A: Film thickness measuring device B: Film forming device C: Film forming substrate supply / collection means D: Film material supply source 1 ... Monitoring substrate unwinding roll 2 ... Monitoring substrate winding Roll 3 ... Main roll for monitoring substrate 4 ... Substrate for film thickness measurement 5 ... Optical characteristic measurement unit (transmission) 6 ... Optical characteristic measurement unit (reflection) 7 ... Electrical characteristic (resistance) measurement unit 8 , 9 ... winding / unwinding roll 10 ... main roll 11 ... film forming material moving region 12 ... electron beam 13 ... film material 14 ... film forming substrate 15 ... vacuum container

Claims (3)

[Claims] 1. A film-forming substrate on which a film is formed by a physical or chemical vapor deposition method is guided to a predetermined position where the film can be formed, and a film is formed on the film-forming substrate, and at the same time, a film is formed on the film-forming substrate. The film thickness measuring base material is passed continuously and in the same direction into the film material moving area where the film material that supplies the film material to be formed on the film forming base material moves to a predetermined position where it can be formed. Let
A film forming method, comprising: forming a film on the film thickness measuring substrate; and then measuring the thickness of the film formed on the film thickness measuring substrate by a film thickness measuring means. 2. The film forming method according to claim 1, wherein when a multilayer film is formed on the film-forming substrate, the film of each layer is formed as a single layer in a different region on the film-forming substrate, and each of the layers is formed. A film forming method characterized in that the film thickness is measured by separately measuring the film thickness and calculating the total thereof. 3. A film forming base material supplying mechanism for supplying a film forming base material, a guiding mechanism for guiding the film forming base material to a region where a film is formed, and a film forming operation for collecting the film forming base material after forming the film. Membrane forming substrate supplying / collecting means having a substrate collecting mechanism, a film for supplying a film material for forming a film by a physical or chemical vapor deposition method on a film forming substrate introduced to a predetermined region where the film can be formed The material supply source is a film forming apparatus main body separated from the film forming base material supply / recovery means, a film thickness measuring base material supplying mechanism for supplying a film thickness measuring base material, and the film thickness measuring base material. Film thickness measurement for guiding the film thickness measuring base material into the film material moving region between the guiding mechanism of the film forming base material supply / recovering means and the film material supply source in order to form a film on the material. And a film thickness measuring means for measuring the film thickness after the film is formed on the film thickness measuring base material. Film forming apparatus, comprising continuously and be composed of a film thickness measuring apparatus for performing thickness measurement while feeding in the same direction.