JPH08136730A - Production of antireflection polarizing film - Google Patents
Production of antireflection polarizing filmInfo
- Publication number
- JPH08136730A JPH08136730A JP6271315A JP27131594A JPH08136730A JP H08136730 A JPH08136730 A JP H08136730A JP 6271315 A JP6271315 A JP 6271315A JP 27131594 A JP27131594 A JP 27131594A JP H08136730 A JPH08136730 A JP H08136730A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polarizing film
- antireflection
- reflectance
- polarizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は液晶ディスプレイ等の光
学部品に用いられる反射防止偏光フィルムの製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an antireflection polarizing film used for optical parts such as liquid crystal displays.
【０００２】[0002]
【従来の技術】テレビ、ＯＡ機器等の分野で使用されて
きた液晶ディスプレイは、近年ビデオカメラ用モニター
としての利用、自動車内での情報端末としての利用等そ
の応用分野が広がってきた。用途分野の拡大とともにデ
ィスプレイ表面での外光に対する反射防止の要望が増大
し、ディスプレイ表面に装着されている偏光フィルムに
も反射防止性が必要となってきた。反射防止偏光フィル
ムは、フッ化マグネシウム、酸化ケイ素、酸化ジルコニ
ウム、酸化チタンのような屈折率の小さいもの、及び／
又は大きいものを偏光フィルム上に単層または多層の薄
膜として形成することによって得られる。単層薄膜によ
る反射防止膜の例として、屈折率の小さいフッ化マグネ
シウムを使用して、屈折率（ｎ）と膜厚（ｄ）の積で定
義される光学的膜厚（ｎｄ）の値を光の波長の１／４倍
程度の大きさとしたものが挙げられる。多層薄膜による
反射防止膜の例として、特開昭６２−１７８９０１号公
報には、真空蒸着法、スパッタリング法により酸化ジル
コニウム、二酸化ケイ素、酸化チタン、二酸化ケイ素の
四層のものが記載されている。これら反射防止膜は、各
層で反射する光を干渉作用で打ち消すことによって反射
防止能を発現させることから、特性の良い反射防止膜を
得るためには構成層の光学的膜厚がなるべく設計値どお
りになるように薄膜を形成することが必要である。真空
蒸着法、スパッタリング法のような反射防止膜の形成方
法における反射防止膜各層の膜厚を監視する方法として
は、被着体の近傍に設置した水晶振動子に膜の成分を付
着させ、その共振周波数の変化から付着量を求め、それ
をもとに被着体への付着膜厚を算出する間接法がある。
また、被着体の近傍にモニター基板を設置し、この基板
の反射率の変化を測定することにより膜の付着量を調整
する方法がある。2. Description of the Related Art In recent years, liquid crystal displays that have been used in the fields of televisions, office automation equipment and the like have been expanding their application fields such as use as monitors for video cameras and as information terminals in automobiles. As the fields of application have expanded, the demand for antireflection of external light on the display surface has increased, and the polarizing film mounted on the display surface also needs antireflection properties. The antireflection polarizing film has a small refractive index such as magnesium fluoride, silicon oxide, zirconium oxide, and titanium oxide, and /
Alternatively, it can be obtained by forming a large one on the polarizing film as a single-layer or multi-layer thin film. As an example of an antireflection film formed of a single-layer thin film, magnesium fluoride having a small refractive index is used, and an optical film thickness (nd) value defined by a product of a refractive index (n) and a film thickness (d) is calculated. The size of the light is about 1/4 times the wavelength of light. As an example of an antireflection film formed of a multilayer thin film, JP-A-62-178901 describes a four-layer structure of zirconium oxide, silicon dioxide, titanium oxide and silicon dioxide by a vacuum deposition method and a sputtering method. These antireflection films exhibit an antireflection ability by canceling the light reflected by each layer by an interference effect, and therefore, in order to obtain an antireflection film with good characteristics, the optical film thickness of the constituent layers should be as designed as possible. It is necessary to form a thin film so that As a method for monitoring the film thickness of each layer of the antireflection film in the method of forming the antireflection film such as the vacuum vapor deposition method and the sputtering method, the components of the film are attached to the crystal unit placed near the adherend, and There is an indirect method in which the amount of adhesion is obtained from the change in resonance frequency, and the thickness of the adhered film on the adherend is calculated based on the amount.
Further, there is a method in which a monitor substrate is installed in the vicinity of the adherend and the change in the reflectance of this substrate is measured to adjust the amount of film deposition.
【０００３】[0003]
【発明が解決しようとする課題】特性の良い反射防止膜
を得るには、反射防止膜を構成する薄膜の光学的膜厚を
厳密に管理するか、あるいは、結果的に反射率が所定の
値で均一となるように膜厚を調整する必要がある。水晶
振動子を用いる膜厚の測定法は、間接法であるために、
膜厚の厳密な管理を行うには限界がある。また、被着体
の近傍にモニター基板を設置し基板の反射率の変化を測
定する方法では、モニター基板を設置する余分な設備を
要し、しかもバッチ式にしか適用できない。In order to obtain an antireflection film having good characteristics, the optical film thickness of the thin film that constitutes the antireflection film must be strictly controlled, or as a result, the reflectance must be a predetermined value. It is necessary to adjust the film thickness so as to be uniform. Since the film thickness measurement method using a crystal oscillator is an indirect method,
There are limits to the strict control of film thickness. Further, the method of installing the monitor substrate in the vicinity of the adherend and measuring the change in the reflectance of the substrate requires extra equipment for installing the monitor substrate and can be applied only to the batch system.
【０００４】そこで本発明は製造過程の反射防止偏光フ
ィルムの反射率を直接測定し、その結果をもとに反射率
のより低く、均一な反射防止偏光フィルムの製造方法を
提供する。Therefore, the present invention provides a method for manufacturing a uniform antireflection polarizing film having a lower reflectance by directly measuring the reflectance of the antireflection polarizing film in the manufacturing process.
【０００５】[0005]
【課題を解決するための手段】すなわち本発明は、偏光
フィルムの表面に反射防止性の薄膜を形成する反射防止
偏光フィルムの製造方法において、該偏光フィルムの薄
膜形成面側に、偏光子をその偏光軸が偏光フィルムの偏
光軸と直交するように配置し、該偏光子の前面にて投光
と反射光の受光することによって該偏光フィルムの薄膜
形成面側の表面反射率を測定し、その結果によって薄膜
形成条件を調整することを特徴とする反射防止偏光フィ
ルムの製造方法を提供するものである。Means for Solving the Problems That is, the present invention provides a method for producing an antireflection polarizing film in which an antireflection thin film is formed on the surface of a polarizing film, wherein a polarizer is provided on the thin film forming surface side of the polarizing film. The polarizing axis is arranged so as to be orthogonal to the polarizing axis of the polarizing film, and the surface reflectance of the polarizing film on the thin film forming side is measured by receiving light projected and reflected light on the front surface of the polarizer, The present invention provides a method for producing an antireflection polarizing film, which is characterized by adjusting thin film forming conditions according to the result.
【０００６】本発明の偏光フィルムとしては、公知のも
の、市販されているものの使用が可能であり、特に限定
されない。なかでも、製品の表面硬度を大きくする点か
ら表面にハードコート処理されたものが望ましい。As the polarizing film of the present invention, known or commercially available polarizing films can be used without any particular limitation. Above all, it is preferable that the surface of the product is hard-coated in order to increase the surface hardness of the product.
【０００７】本発明の偏光フィルムの表面に反射防止性
の薄膜を形成する方法としては、公知の真空蒸着法、ス
パッタリング法のように真空条件下で行う乾式法の他、
湿式法の薄膜形成方法がある。なかでも乾式法がより適
している。As a method for forming an antireflection thin film on the surface of the polarizing film of the present invention, other than the dry method performed under vacuum conditions such as the known vacuum deposition method and sputtering method,
There is a wet method for forming a thin film. Of these, the dry method is more suitable.
【０００８】乾式法において、所定の大きさの偏光フィ
ルム１枚または複数枚を薄膜を形成させる真空容器に仕
込んでバッチ方式により反射防止膜を形成してもよい
し、巻物状の偏光フィルムに薄膜を付着させる部位に供
給し、必要な薄膜形成後に巻取る連続方式にも適用でき
る。なかでも連続方式が適している。In the dry method, one or a plurality of polarizing films of a predetermined size may be placed in a vacuum container for forming a thin film to form an antireflection film by a batch method, or a thin film may be formed on a roll-shaped polarizing film. It can also be applied to a continuous system in which the film is supplied to a portion to be attached and wound after forming a necessary thin film. Among them, the continuous method is suitable.
【０００９】本発明の偏光子とは、直線偏光を発生させ
るいわゆる直線偏光子であり、W.A.シャークリフ著、福富ら訳
「偏光とその応用」３章偏光子の種類とその性能に記載
のものである。なかでも偏光フィルムが最も簡便に使用
され、とくに両面に反射防止処理を施した偏光フィルム
が実用的に優れている。The polarizer of the present invention is a so-called linear polarizer that generates linearly polarized light, and is described in WA Sharkcliff, Fukutomi et al., "Polarization and its Applications," Chapter 3, Types of Polarizers and Their Performance. Is. Among them, the polarizing film is most conveniently used, and the polarizing film having both surfaces subjected to antireflection treatment is practically excellent.
【００１０】本発明の偏光子は、薄膜が形成される偏光
フィルムとそれぞれの偏光軸が直交するように配置する
ことが必要である。偏光子をこのように配置する理由
は、薄膜が形成された偏光フィルムの表面反射率を、フ
ィルム裏面からの反射の影響を受けずに正確に測定する
ことにある。すなわち偏光子と偏光フィルムのそれぞれ
の偏光軸を直交させることにより偏光フィルムの裏側へ
透過する光がカットされ、それにより裏面反射の影響を
排除して表面反射のみを検出することができるからであ
る。The polarizer of the present invention is required to be arranged so that the polarizing axes of the polarizing film on which the thin film is formed are orthogonal to each other. The reason for arranging the polarizer in this manner is to accurately measure the surface reflectance of the polarizing film on which the thin film is formed, without being affected by the reflection from the back surface of the film. That is, by making the polarization axes of the polarizer and the polarizing film orthogonal to each other, the light transmitted to the back side of the polarizing film is cut, whereby the influence of the back surface reflection can be eliminated and only the front surface reflection can be detected. .
【００１１】両者の配置は、単に重ね合わせても良い
し、ある程度の間隔があっても良い。例えば、測定対象
の偏光フィルムが一葉一葉と別々のものであれば、重ね
合わせて測定することが出来る。測定対象の偏光フィル
ムが、連続方式で薄膜を付着させる前後の部分であれ
ば、所定の位置に偏光子を置き、ある程度の間隔をあけ
て偏光フィルムを走行させながら測定することも出来
る。つまり巻物状の偏光フィルムを巻き出し−測定−巻
取りを一連の操作として行なう。The two may be arranged simply on top of each other or may be spaced to some extent. For example, if the polarizing film to be measured is different from each leaf, it is possible to measure by overlapping. If the polarizing film to be measured is a part before and after the thin film is adhered by the continuous method, the polarizer can be placed at a predetermined position and the polarizing film can be run at a certain interval for measurement. That is, a rolled polarizing film is unwound, measured, and wound as a series of operations.
【００１２】偏光フィルム製品の反射率を測定するに
は、光源からの所定光量の光を出射する機能と反射光を
受光しその光量を測定する光度計とを備えた装置を用い
る。なお、この様な装置は、市販されている。In order to measure the reflectance of a polarizing film product, a device having a function of emitting a predetermined amount of light from a light source and a photometer for receiving the reflected light and measuring the amount of the light is used. Such a device is commercially available.
【００１３】測定対象の偏光フィルム製品に偏光子を配
したところに、該偏光子の前面から該装置により出射光
線を当て、つまり偏光子を通して偏光フィルム製品の表
面に光を当て、該表面からの反射光も偏光子を通して受
光して光量を測定することにより、反射率を算出する。When a polarizer is placed on a polarizing film product to be measured, an output light beam is applied from the front surface of the polarizer by the device, that is, light is applied to the surface of the polarizing film product through the polarizer, The reflectance is also calculated by receiving the reflected light through the polarizer and measuring the amount of light.
【００１４】本発明の反射率測定方法の一例として、
特定の波長の光における表面反射率Ｒ0 を有する標準試
料に偏光子を配してその波長の光による反射光の強度Ｐ
1 を求める。上記から標準試料を除き偏光子のみを同
様に測定を行い、偏光子からの反射光の強度Ｐ2 を求め
る。測定対象の偏光フィルム製品をの標準試料と同
じ位置に配し同様に測定を行い、反射光の強度Ｐ3 を求
める。これらＰ1 、Ｐ2 、Ｐ3 とＲ0 とから、下記〔数
１〕によって測定対象の偏光フィルム製品の表面反射率
Ｒs を得ることができる。As an example of the reflectance measuring method of the present invention,
A polarizer is placed on a standard sample having a surface reflectance R 0 for light of a specific wavelength, and the intensity P of the light reflected by the light of that wavelength is set.
Ask for 1 . The standard sample is removed from the above and only the polarizer is measured in the same manner to obtain the intensity P 2 of the reflected light from the polarizer. The polarizing film product to be measured is placed at the same position as the standard sample, and the same measurement is performed to obtain the intensity P 3 of the reflected light. From these P 1 , P 2 , P 3 and R 0 , the surface reflectance R s of the polarizing film product to be measured can be obtained by the following [Equation 1].
【００１５】[0015]
【数１】Ｒs ＝（Ｐ3 −Ｐ2 ）÷（Ｐ1 −Ｐ2 ）×Ｒ0 ## EQU1 ## R s = (P 3 −P 2 ) ÷ (P 1 −P 2 ) × R 0
【００１６】なお、上記装置にコンピューターを接続
し、あらかじめ測定したＰ1 、Ｐ2 及びＲ0 の値をもっ
て、Ｐ3 を測定すれば、上記式の演算を行わせ、瞬時に
表面反射率の値を得ることができる。If a computer is connected to the above apparatus and P 3 is measured with the values of P 1 , P 2 and R 0 measured in advance, the above equation is calculated and the surface reflectance value is instantaneously calculated. Can be obtained.
【００１７】表面反射率を測定し、その結果によって薄
膜形成条件を調整するには、所謂フィードバック方式で
膜の付着量を増減させるのと、薄膜が多層の場合は、つ
ぎの薄膜層の付着量を増減させることもできる。なお、
膜の付着量を増減させるには、薄膜を形成するときに用
いられる周知の手段に依ればよい。例えば膜を形成する
成分の単位時間当たりの発生量の増減、偏光フィルムの
滞留時間の増減等である。To measure the surface reflectance and adjust the thin film forming conditions based on the result, the so-called feedback method is used to increase / decrease the amount of the film deposited. If the thin film is a multi-layer, the amount of the next thin film layer is deposited. Can be increased or decreased. In addition,
In order to increase / decrease the amount of adhered film, well-known means used when forming a thin film may be used. For example, increase / decrease in the amount of components forming the film per unit time, increase / decrease in the residence time of the polarizing film, and the like.
【００１８】[0018]
【実施例】実施例で用いた巻取方式スパッタリング法の
一例を図１によって示す。反射防止性の薄膜を形成しよ
うとする偏光フィルム２をフィルム巻出機６から冷却ロ
ール８に沿って第一スパッタリング室１１に供給し、こ
こで第一層薄膜を形成する。続いて第二スパッタリング
室１２で第二層薄膜を形成する。第二層の薄膜形成後、
偏光子３’と反射率検出器１’とにより表面反射率を測
定し、フィルム巻取機７で巻取る。次に、巻取機７で巻
取ったものを逆に繰り出し、冷却ロール８に沿って（第
二スパッタリング室１２は単に通過）第一スパッタリン
グ室１１で第三層薄膜を形成させ、同様に偏光子３と反
射率検出器１により第三層形成後の表面反射率を測定し
た後、巻出機６に巻戻す。再度巻出機６から冷却ロール
８に沿って（第一スパッタリング室１１は単に通過）第
二スパッタリング室１２で第四層薄膜を形成させ、反射
率検出器１’と偏光子３’の組合せで第四層形成後の表
面反射率を測定した後、巻取機７に巻取る。再度巻取機
７から冷却ロール８に沿って（第二スパッタリング室１
２は単に通過）第一スパッタリング室１１で第五層薄膜
を形成させ、反射率検出器１と偏光子３の組合せで第五
層形成後の表面反射率を測定した後、巻出機６に巻取
る。EXAMPLE An example of the winding type sputtering method used in the examples is shown in FIG. The polarizing film 2 on which an antireflection thin film is to be formed is supplied from the film unwinder 6 along the cooling roll 8 to the first sputtering chamber 11, where the first layer thin film is formed. Subsequently, a second layer thin film is formed in the second sputtering chamber 12. After forming the thin film of the second layer,
The surface reflectance is measured by the polarizer 3'and the reflectance detector 1 ', and wound by the film winder 7. Next, the material wound by the winder 7 is unwound in the reverse direction, and the third layer thin film is formed in the first sputtering chamber 11 along the cooling roll 8 (the second sputtering chamber 12 simply passes), and the polarized light is similarly polarized. After the surface reflectance after the third layer is formed is measured by the child 3 and the reflectance detector 1, it is rewound to the unwinder 6. A fourth layer thin film is formed again in the second sputtering chamber 12 from the unwinder 6 along the cooling roll 8 (the first sputtering chamber 11 simply passes), and the combination of the reflectance detector 1 ′ and the polarizer 3 ′ is used. After measuring the surface reflectance after forming the fourth layer, the film is wound on a winder 7. Again from the winder 7 along the cooling roll 8 (second sputtering chamber 1
(2 simply passes) The fifth layer thin film is formed in the first sputtering chamber 11, the surface reflectance after the fifth layer is formed is measured by the combination of the reflectance detector 1 and the polarizer 3, and then the unwinder 6 is used. Wind up.
【００１９】用いた材料、測定方法は、以下のとおりで
ある。 ・偏光フィルム：住友化学工業株式会社製表面ハードコ
ート処理の偏光フィルムSK1832A-HC ・偏光子：住友化学工業株式会社製偏光フィルムSK1832
A の両面に反射防止処理したもの。 ・標準試料：表面に厚さ５μのハードコート層を、裏面
に黒色塗料を塗布した厚さ２５０μのポリメチルメタク
リレートフィルムで、波長毎の表面反射率Ｒ0 は、400n
m;4.48、500nm;4.20、600nm;4.12、700nm;4.10）であ
る。 ・スパッタリングターゲット：第一スパッタリング室
は、シリコン単結晶（ホウ素ドープ品）、第二スパッタ
リング室は、金属チタン（純度 ９９．９％）。 ・スパッタリング用ガス：アルゴンガス ・反応性ガス：酸素ガス ・反射率の測定：大塚電子株式会社製ＭＣＰＤ−１００
０を用い、可視光領域の４００〜７００ｎｍの反射率ス
ペクトルを測定した。The materials used and the measuring method are as follows.・ Polarizing film: Sumitomo Chemical Co., Ltd. surface hard coating polarizing film SK1832A-HC ・ Polarizer: Sumitomo Chemical Co., Ltd. polarizing film SK1832
Both sides of A have anti-reflection treatment. Standard sample: a 250 μm thick polymethylmethacrylate film having a 5 μm thick hard coat layer on the front surface and a black paint on the back face, and the surface reflectance R 0 for each wavelength is 400 n.
m; 4.48, 500 nm; 4.20, 600 nm; 4.12, 700 nm; 4.10). Sputtering target: Silicon single crystal (boron-doped product) in the first sputtering chamber, and metallic titanium (purity 99.9%) in the second sputtering chamber.・ Sputtering gas: Argon gas ・ Reactive gas: Oxygen gas ・ Measurement of reflectance: MCPD-100 manufactured by Otsuka Electronics Co., Ltd.
0 was used to measure the reflectance spectrum of 400 to 700 nm in the visible light region.
【００２０】反射防止膜の成膜は、下記〔表１〕に示す
条件でスタートした。第五層まで成膜したときの、本発
明の方法で反射率検出器１と偏光子３の組合せにより測
定した反射防止偏光フィルムの反射率スペクトルを図２
に示す。しかしこのスペクトルでは反射防止特性として
不適切であったので、第五層の成膜を行いながらその条
件の内フィルム速度のみ０．２２ｍ／分に変更した。速
度変更後に同様の方法で測定した反射率スペクトルを図
３に示す。このスペクトルは反射防止特性として適切な
ものとなってきたが、まだ長波長側の反射率が大きいの
で、成膜を行いながら再度フィルム速度を変更し、０．
２１ｍ／分とした。その結果図４に示すように適切な反
射率スペクトルが得られた。The formation of the antireflection film was started under the conditions shown in Table 1 below. FIG. 2 shows the reflectance spectrum of the antireflection polarizing film measured by the method of the present invention by the combination of the reflectance detector 1 and the polarizer 3 when the fifth layer is formed.
Shown in However, this spectrum was unsuitable for the antireflection property, so that only the film speed was changed to 0.22 m / min under the conditions while forming the fifth layer. The reflectance spectrum measured by the same method after changing the speed is shown in FIG. This spectrum has become appropriate as an antireflection property, but since the reflectance on the long wavelength side is still large, the film speed was changed again while film formation, and
21 m / min. As a result, an appropriate reflectance spectrum was obtained as shown in FIG.
【００２１】[0021]
【表１】 [Table 1]
【００２２】[0022]
【発明の効果】本発明により、偏光フィルムの表面反射
率が正確に測定でき、その結果を反射防止膜形成の調整
に反映させることができるので良好な反射率を有する反
射防止偏光フィルムの製造を容易に行うことができる。According to the present invention, the surface reflectance of a polarizing film can be accurately measured, and the result can be reflected in the adjustment of the antireflection film formation. Therefore, it is possible to manufacture an antireflection polarizing film having a good reflectance. It can be done easily.
【図１】本発明の実施例の巻取式スパッタリング装置の
断面図である。 る方法であFIG. 1 is a cross-sectional view of a winding type sputtering apparatus according to an embodiment of the present invention. In a way
【図２】本発明の実施例の初期条件で得られた反射防止
偏光フィルムの反射率スペクトル図である。FIG. 2 is a reflectance spectrum diagram of the antireflection polarizing film obtained under the initial condition of the example of the present invention.
【図３】本発明の実施例の１回目の条件変更で得られた
反射防止偏光フィルムの反射率スペクトル図である。FIG. 3 is a reflectance spectrum diagram of the antireflection polarizing film obtained by the first condition change in the example of the present invention.
【図４】本発明の実施例の２回目の条件変更で得られた
反射防止偏光フィルムの反射率スペクトル図である。FIG. 4 is a reflectance spectrum diagram of an antireflection polarizing film obtained by changing the conditions for the second time in the example of the present invention.
１、１’：反射率検出器 ２：偏光フィルム ３、３’：偏光子 ５：真空容器 ６：フィルム巻出機 ７：フィルム巻取機 ８：冷却ロール ９、１０：スパッタリングターゲット・カソード組立物 １１：第一スパッタリング室 １２：第二スパッタリング室 １３、１４：反応性ガス供給口 １５：仕切り 1, 1 ': reflectance detector 2: polarizing film 3, 3': polarizer 5: vacuum container 6: film unwinder 7: film winder 8: cooling roll 9, 10: sputtering target / cathode assembly 11: First sputtering chamber 12: Second sputtering chamber 13, 14: Reactive gas supply port 15: Partition
Claims (1)
形成する反射防止偏光フィルムの製造方法において、該
偏光フィルムの薄膜形成面側に、偏光子をその偏光軸が
偏光フィルムの偏光軸と直交するように配置し、該偏光
子の前面にて光源からの光の投光と反射光の受光するこ
とによって該偏光フィルムの薄膜形成面側の表面反射率
を測定し、その結果によって薄膜形成条件を調整するこ
とを特徴とする反射防止偏光フィルムの製造方法。1. A method for producing an antireflection polarizing film comprising forming an antireflection thin film on the surface of a polarizing film, wherein a polarizer is provided on the thin film forming surface side of the polarizing film, the polarization axis of which is the polarization axis of the polarizing film. By arranging them orthogonally, the surface reflectance of the thin film forming surface side of the polarizing film is measured by projecting the light from the light source and receiving the reflected light on the front surface of the polarizer. A method for producing an antireflection polarizing film, which comprises adjusting conditions.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6271315A JPH08136730A (en) | 1994-11-04 | 1994-11-04 | Production of antireflection polarizing film |
| DE19540125A DE19540125A1 (en) | 1994-10-31 | 1995-10-27 | Surface reflection measuring device for polarisation film product |
| KR1019950038195A KR960014977A (en) | 1994-10-31 | 1995-10-30 | Method of measuring surface reflectivity and manufacturing method of anti-reflective polarizing film |
| TW084111561A TW284846B (en) | 1994-10-31 | 1995-10-30 | |
| US08/558,608 US5812264A (en) | 1994-10-31 | 1995-10-31 | Method of measuring surface reflectance and a method of producing antireflective polarizing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6271315A JPH08136730A (en) | 1994-11-04 | 1994-11-04 | Production of antireflection polarizing film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08136730A true JPH08136730A (en) | 1996-05-31 |
Family
ID=17498345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6271315A Pending JPH08136730A (en) | 1994-10-31 | 1994-11-04 | Production of antireflection polarizing film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08136730A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170042510A (en) | 2014-08-08 | 2017-04-19 | 닛토덴코 가부시키가이샤 | Antireflective film and manufacturing method thereof, and method of measuring reflected light characteristics of antireflective film |
| KR20170042509A (en) | 2014-08-08 | 2017-04-19 | 닛토덴코 가부시키가이샤 | Antireflective film and manufacturing method thereof, and method of measuring reflected light characteristics of antireflective film |
| JP2018016892A (en) * | 2017-10-31 | 2018-02-01 | デクセリアルズ株式会社 | Thin film forming apparatus, thin film forming method, and optical film manufacturing method |
| JP2019035969A (en) * | 2018-10-10 | 2019-03-07 | デクセリアルズ株式会社 | Manufacturing method of antireflection film |
| JP2020172706A (en) * | 2020-07-03 | 2020-10-22 | デクセリアルズ株式会社 | Method of manufacturing optical film |
-
1994
- 1994-11-04 JP JP6271315A patent/JPH08136730A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170042510A (en) | 2014-08-08 | 2017-04-19 | 닛토덴코 가부시키가이샤 | Antireflective film and manufacturing method thereof, and method of measuring reflected light characteristics of antireflective film |
| KR20170042509A (en) | 2014-08-08 | 2017-04-19 | 닛토덴코 가부시키가이샤 | Antireflective film and manufacturing method thereof, and method of measuring reflected light characteristics of antireflective film |
| KR20220054707A (en) | 2014-08-08 | 2022-05-03 | 닛토덴코 가부시키가이샤 | Antireflective film and manufacturing method thereof, and method of measuring reflected light characteristics of antireflective film |
| JP2018016892A (en) * | 2017-10-31 | 2018-02-01 | デクセリアルズ株式会社 | Thin film forming apparatus, thin film forming method, and optical film manufacturing method |
| JP2019035969A (en) * | 2018-10-10 | 2019-03-07 | デクセリアルズ株式会社 | Manufacturing method of antireflection film |
| JP2020172706A (en) * | 2020-07-03 | 2020-10-22 | デクセリアルズ株式会社 | Method of manufacturing optical film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| USRE41747E1 (en) | Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film | |
| EP0103485B1 (en) | Processes for manufacturing double refraction plates and double refraction plates made by such processes | |
| EP0585883B1 (en) | Method of measuring refractive index of thin film | |
| JPH11249067A (en) | Observation system having half mirror and production of the half mirror | |
| JPH08136730A (en) | Production of antireflection polarizing film | |
| US5812264A (en) | Method of measuring surface reflectance and a method of producing antireflective polarizing film | |
| JP3614575B2 (en) | Optical element or apparatus, manufacturing method thereof, and manufacturing apparatus thereof | |
| WO2003052468A1 (en) | Film forming device, and production method for optical member | |
| US10317599B2 (en) | Wavelength plate and optical device | |
| EP0932059A2 (en) | Phase retarder film | |
| JP2002350610A (en) | Thin film nd filter and method for manufacturing the same | |
| EP0977058A1 (en) | Anti-reflection film and cathode ray tube | |
| JP2001181850A (en) | Method of continuous film deposition using atmospheric pressure plasma | |
| JPH0882701A (en) | Production of antireflection film | |
| JP3225632B2 (en) | Method for producing transparent gas barrier film | |
| JP2000241127A (en) | Film thickness measurement method and winding-up vacuum film-forming device | |
| JP2000241605A (en) | Antireflection film, display device and film forming device | |
| JP2008069378A (en) | Transmittance monitor for multilayer film | |
| WO2022052225A1 (en) | Liquid crystal display and manufacturing method therefor | |
| JPH11263861A (en) | Preparation of phase difference film | |
| WO2023190134A1 (en) | Rear projection display system | |
| JPH05249312A (en) | Production of optical multilayered film | |
| JP2004061810A (en) | Method and device for manufacturing multilayered film optical filter | |
| JPS62123402A (en) | Antireflection film | |
| JPH07138744A (en) | Production of fluoride thin film and fluoride thin film produced by the same |