JPH09256155A - Film forming device - Google Patents

Film forming device

Info

Publication number
JPH09256155A
JPH09256155A JP9016896A JP9016896A JPH09256155A JP H09256155 A JPH09256155 A JP H09256155A JP 9016896 A JP9016896 A JP 9016896A JP 9016896 A JP9016896 A JP 9016896A JP H09256155 A JPH09256155 A JP H09256155A
Authority
JP
Japan
Prior art keywords
vapor deposition
film thickness
thickness monitor
film
monitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9016896A
Other languages
Japanese (ja)
Inventor
Katsunori Yanagisawa
勝則 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Miyota KK
Original Assignee
Miyota KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Miyota KK filed Critical Miyota KK
Priority to JP9016896A priority Critical patent/JPH09256155A/en
Publication of JPH09256155A publication Critical patent/JPH09256155A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To transmit information of a film thickness monitor by a transmitter of a radio system and a receiver receiving signals of the transmitter. SOLUTION: The film forming device is constituted of a vapor deposition room 29, a vapor deposition source 26 installed at a lower part of the vapor deposition room, a substrate holder 24 which is installed at an upper part of the vapor deposition source and aligns and fixes a substrate on which a film is formed, a vapor deposition jig 21 which guides and fixes the substrate holder and rotates the substrate holder above the vapor deposition source, a film thickness monitor 22 monitoring thickness of the film formed on the substrate and a controller 53 controlling the vapor deposition source according to information of the film thickness monitor. Further, in the film forming device in which the film thickness monitor 23 and the substrate holder 24 are disposed at positions where they can move in a same way and the film thickness monitor 23 is disposed near the substrate, the transmitter 60 of a radio system for transmitting information of the film thickness monitor 23 is installed in the vapor deposition room 29 the receiver 61 for receiving signals of the transmitter is installed inside or outside the vapor deposition room.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、成膜装置に関する
ものである。
[0001] The present invention relates to a film forming apparatus.

【0002】[0002]

【従来の技術】基板の表面に金属膜を形成して電極や回
路パターンとして使用することや圧電基板に薄膜の励振
電極を設け、電極に交流をかけて共振させ基準周波数源
とすることは古くから行われている。圧電セラミックス
やピエゾ効果を有する単結晶に薄膜の励振電極を設けて
振動子として使用している例が多いが、金属薄膜の成膜
は真空槽内に振動片を適当な治具で配置し、蒸着やスパ
ッタリング等の手法で行われている。基板に何を使用す
るか、成膜材料に何を使用するかは薄膜を形成するにお
いては単なる選択事項なので、以下では例示としてAT
カット水晶振動子の電極成膜を真空蒸着法で行う場合を
想定して説明するが例示に限定されるものではない。
2. Description of the Related Art It has long been known that a metal film is formed on the surface of a substrate to be used as an electrode or a circuit pattern, or that a thin film excitation electrode is provided on a piezoelectric substrate and an alternating current is applied to the electrode to cause resonance to serve as a reference frequency source. Has been done from. In many cases, a thin film excitation electrode is provided on a piezoelectric ceramic or a single crystal having a piezo effect to be used as a vibrator, but for film formation of a metal thin film, a vibrating piece is placed in an appropriate jig in a vacuum chamber, It is performed by methods such as vapor deposition and sputtering. What is used for the substrate and what is used for the film-forming material are merely choices in forming the thin film, and therefore, in the following, AT is used as an example.
The description will be made assuming that the electrode formation of the cut quartz oscillator is performed by the vacuum deposition method, but the present invention is not limited to the example.

【0003】図1はシリンダ型容器に収納された矩形状
ATカット水晶振動子の斜視図である。図5は矩形状A
Tカット水晶振動片40単体の斜視図である。ATカッ
ト水晶振動子は一般に次ぎのように製造される。水晶原
石を所望するATカット水晶振動片2に加工する工程、
ATカット水晶振動片2に電極3を成膜する工程、気密
端子4のリード端子5にATカット水晶振動片2を固定
するマウント工程、所望する周波数に合わせ込む調整工
程、金属カバー1でATカット水晶振動片2を気密封止
する工程から成る。
FIG. 1 is a perspective view of a rectangular AT-cut crystal unit housed in a cylinder type container. FIG. 5 shows a rectangular shape A
It is a perspective view of the T-cut crystal vibrating piece 40 alone. The AT-cut crystal unit is generally manufactured as follows. Process of processing the rough quartz into the desired AT-cut quartz vibrating piece 2,
AT cutting crystal vibrating reed 2 film forming process, mounting process for fixing AT cutting crystal vibrating reed 2 to the lead terminal 5 of the airtight terminal 4, adjusting process for adjusting to desired frequency, AT cutting with metal cover 1 The process includes hermetically sealing the crystal vibrating piece 2.

【0004】水晶振動片に電極を成膜する工程は、電気
信号を取り出すための励振電極を形成することを主たる
目的にしているが、同時にその振動周波数の粗調整をす
ることも目的としている。水晶振動片の表面上に質量が
一様に付加すると、その振動周波数が減少する特性があ
ることが知られている。前記電極を成膜する工程でも電
極膜という質量が水晶振動片に付加されることでその振
動周波数が減少する。この減少する量を電極降下量ある
いはプレートバック量という。プレートバック量は電極
の面積、密度、膜厚及び水晶振動片の大きさ、周波数等
によって異なる。電極膜の材料としては、銀、金、ニッ
ケル、アルミニウム、パラジウム等が使用され、用途に
よってはクロムやチタンを下地にし、その上に前記電極
材を積層することもある。
The process of forming an electrode on the quartz crystal vibrating piece is mainly intended to form an exciting electrode for taking out an electric signal, but at the same time, it is also intended to roughly adjust the vibration frequency. It is known that when a mass is uniformly applied on the surface of a quartz-crystal vibrating piece, its vibration frequency has a characteristic of decreasing. Also in the step of forming the electrode, the vibration frequency is reduced by adding the mass of the electrode film to the crystal vibrating piece. This decreasing amount is called an electrode drop amount or a plate back amount. The amount of plate back varies depending on the area, density, film thickness, size, frequency, etc. of the crystal vibrating piece. As a material of the electrode film, silver, gold, nickel, aluminum, palladium, or the like is used. Depending on the application, chromium or titanium may be used as a base, and the electrode material may be laminated thereon.

【0005】図2は従来技術を説明するための成膜装置
の模式図であり正面断面図である。蒸着室29には矩形
状ATカット水晶振動片(以下、ワーク振動子という)
40に電極を蒸着するための蒸着源26を有している。
蒸着源26の上部にワーク振動子40を多数整列収納し
た基板ホルダー24とプレートバック量を制御するため
の膜厚モニター22と膜厚モニター22内のATカット
水晶振動片(以下モニター振動子という)30の振動周
波数を発振させる発振回路23が配置されている。基板
ホルダー24は蒸着治具21によりガイド固定されてい
る。蒸着治具21は反転部回転接続装置55に固定さ
れ、反転(180度回転)又は常に自転可能になってい
る。反転部回転接続装置55は公転部回転接続装置56
に接続され、蒸着室29の中心に対して公転可能になっ
ている。
FIG. 2 is a schematic front view of a film forming apparatus for explaining the prior art. A rectangular AT-cut quartz crystal vibrating piece (hereinafter referred to as a work vibrator) is provided in the vapor deposition chamber 29.
A deposition source 26 for depositing an electrode is provided at 40.
A substrate holder 24 in which a large number of work oscillators 40 are aligned and housed above the vapor deposition source 26, a film thickness monitor 22 for controlling the plate back amount, and an AT-cut quartz crystal vibrating piece in the film thickness monitor 22 (hereinafter referred to as a monitor oscillator). An oscillation circuit 23 that oscillates the vibration frequency of 30 is arranged. The substrate holder 24 is guide-fixed by the vapor deposition jig 21. The vapor deposition jig 21 is fixed to the reversing unit rotation connecting device 55, and is capable of reversing (rotating 180 degrees) or constantly rotating. The reversing part rotation connecting device 55 is the revolving part rotation connecting device 56.
, And can revolve around the center of the vapor deposition chamber 29.

【0006】図3は成膜装置内部の模式を示す底面図で
ある。図4は丸形ATカット水晶振動片の斜視図であ
る。蒸着治具21は10基配置されており、全体が矢印
の方向に回転する。膜厚モニター22はワーク振動子4
0を整列固定する基板ホルダー24をガイド固定する蒸
着治具21の一つに設置されている。10基の蒸着治具
21は、全体が1回転すると個々の蒸着治具自体が反転
(180度回転)するようになっており、反転のつど蒸
着される面が変わる。必要であれば蒸着治具21を自公
転するようにしても良い。蒸着材料25は適宣前述の材
料から選ばれる。膜厚モニター22には図4に示すよう
な丸形のモニター振動子30を使用するが、モニター振
動子30の形状は特に丸形に限定するものではない。
FIG. 3 is a bottom view schematically showing the inside of the film forming apparatus. FIG. 4 is a perspective view of a round AT-cut crystal vibrating piece. Ten evaporation jigs 21 are arranged, and the whole rotates in the direction of the arrow. The film thickness monitor 22 is the work vibrator 4
It is installed on one of the vapor deposition jigs 21 for guiding and fixing the substrate holder 24 for aligning and fixing 0s. Each of the ten vapor deposition jigs 21 inverts itself (rotates by 180 degrees) when the whole of the vapor deposition jigs makes one revolution, and the vapor-deposited surface changes with each inversion. If necessary, the evaporation jig 21 may be revolved around its own axis. The vapor deposition material 25 is suitably selected from the aforementioned materials. A circular monitor vibrator 30 as shown in FIG. 4 is used for the film thickness monitor 22, but the shape of the monitor vibrator 30 is not particularly limited to the round shape.

【0007】蒸着のレートと蒸着膜厚の制御は、モニタ
ー振動子30の振動周波数の変化を蒸着膜厚に換算する
ことで行われている。これを言い替えれば、ワーク振動
子40のプレートバック量を制御していることになる。
The vapor deposition rate and the vapor deposition film thickness are controlled by converting the change in the vibration frequency of the monitor vibrator 30 into the vapor deposition film thickness. In other words, the plate back amount of the work vibrator 40 is controlled.

【0008】モニター振動子30は予め電極31を形成
しておき、発振回路23に接続することで蒸着開始時か
ら常時その振動周波数を取り出せるようになっており、
取り出した振動周波数は制御装置53で読み取られる。
制御装置53はモニター振動子30の振動周波数の変化
により蒸着源26のパワーを制御し、モニター振動子3
0の振動周波数が設定値と一致したら蒸着材料25の上
面に位置するオーバーラン防止のシャッター(図示せ
ず)を閉じ蒸着を終了させる。
An electrode 31 is formed in advance on the monitor vibrator 30, and by connecting it to the oscillation circuit 23, the vibration frequency can be always taken out from the start of vapor deposition.
The extracted vibration frequency is read by the control device 53.
The control device 53 controls the power of the evaporation source 26 by changing the vibration frequency of the monitor vibrator 30, and
When the vibration frequency of 0 matches the set value, the overrun prevention shutter (not shown) located on the upper surface of the vapor deposition material 25 is closed to terminate the vapor deposition.

【0009】[0009]

【発明が解決しようとする課題】水晶振動片に電極を成
膜する工程は、電気信号を取り出すための励振電極を形
成することを主たる目的としているが、同時にその振動
周波数を粗調整し、一定の狙い値にいれることも目的と
している。成膜後のワーク振動子40の振動周波数のバ
ラツキは、その電極膜厚のバラツキによって大きく影響
を受けるから、蒸着室29内のワーク振動子40の電極
膜厚はできるだけ均一にする必要がある。電極膜厚のバ
ラツキは蒸着源26からワーク振動子40までの距離に
依存するのでワーク振動子40は蒸着源26からできる
だけ等しい距離になるように配置され、かつ蒸着中は蒸
着室29の中心に対して公転しているので蒸着源26か
らの距離は常に一定となる。またワーク振動子40の表
面、裏面の電極膜厚を等しくするために、基板ホルダー
24に整列固定されたワーク振動子40は、基板ホルダ
ー24に対して定期的に反転(又は常に自転)しながら
成膜される。
In the step of forming an electrode on a quartz crystal resonator element, the main purpose is to form an excitation electrode for extracting an electric signal, but at the same time, the vibration frequency is roughly adjusted to a constant value. It also aims to enter the target value of. Since the variation of the vibration frequency of the work oscillator 40 after the film formation is greatly influenced by the variation of the electrode film thickness, it is necessary to make the electrode film thickness of the work oscillator 40 in the vapor deposition chamber 29 as uniform as possible. Since the variation in the electrode film thickness depends on the distance from the deposition source 26 to the work vibrator 40, the work vibrator 40 is disposed so as to be as far as possible from the vapor deposition source 26, and is positioned at the center of the vapor deposition chamber 29 during the vapor deposition. On the other hand, since it revolves, the distance from the evaporation source 26 is always constant. Further, in order to equalize the electrode film thicknesses on the front surface and the back surface of the work vibrator 40, the work vibrator 40 aligned and fixed to the substrate holder 24 is periodically inverted (or always rotated) with respect to the substrate holder 24. It is formed into a film.

【0010】蒸着源26の制御は制御装置53を経由し
てモニター振動子30の振動周波数の変化によって行わ
れる。言いかえるとワーク振動子40の成膜はモニター
振動子30の振動周波数変化によって制御される。この
ためモニター振動子30はワーク振動子40と同じ動き
ができる位置であり、かつワーク振動子40のできるだ
け近傍に設置されている。図2に示した従来技術でもモ
ニター振動子30はワーク振動子40と同じ動きができ
かつワーク振動子40のできるだけ近傍になるように蒸
着治具21に設置されていて蒸着中はワーク振動子40
と一緒に公転及び定期的に反転(又は常に自転)してい
る。
The evaporation source 26 is controlled by changing the vibration frequency of the monitor vibrator 30 via the control device 53. In other words, the film formation of the work vibrator 40 is controlled by a change in the vibration frequency of the monitor vibrator 30. Therefore, the monitor vibrator 30 is located at a position where the same movement as the work vibrator 40 can be performed, and is set as close to the work vibrator 40 as possible. In the prior art shown in FIG. 2 as well, the monitor vibrator 30 can be moved in the same manner as the work vibrator 40 and is set on the vapor deposition jig 21 so as to be as close to the work vibrator 40 as possible.
And revolves regularly (or always rotates).

【0011】モニター振動子30の振動周波数は蒸着源
26を制御するために発振回路23を経由して蒸着室2
9の外部に設置してある制御装置53に伝送されなけれ
ばならない。ところが前述したごとく成膜中、モニター
振動子30は蒸着室29内にて蒸着室29の中心に対し
て公転し、定期的に反転(又は常に自転)しているの
で、モニター振動子30の振動周波数を発振回路23で
発振させ、蒸着室29の外部に設置してある制御装置5
3に入力する時、伝送方法に問題がある。モニター振動
子30は公転かつ定期的に反転(又は常に自転)してお
り、有線で制御装置53に振動周波数を伝送するのは困
難である。要約すると蒸着中公転かつ定期的に反転(又
は常に自転)している。モニター振動子30の振動周波
数を有線で蒸着室29の外部にある制御装置53に伝送
すると伝送線が公転部回転接続装置56及び反転部回転
接続装置55にからまって、公転及び定期的に反転(又
は常に自転)できなくなり、成膜装置が停止してしまう
という課題を有している。
The vibration frequency of the monitor oscillator 30 is controlled by the oscillation circuit 23 to control the vapor deposition source 26, and the vapor deposition chamber 2 is controlled.
9 must be transmitted to the control device 53 installed outside the device 9. However, as described above, during the film formation, the monitor oscillator 30 revolves in the vapor deposition chamber 29 with respect to the center of the vapor deposition chamber 29 and periodically inverts (or always rotates). A control device 5 that oscillates a frequency with the oscillation circuit 23 and is installed outside the vapor deposition chamber 29.
When inputting to 3, there is a problem with the transmission method. Since the monitor oscillator 30 revolves around and rotates regularly (or always rotates), it is difficult to transmit the vibration frequency to the control device 53 by wire. In summary, it is revolving during vapor deposition and is regularly reversed (or always rotated). When the vibration frequency of the monitor vibrator 30 is transmitted to the control device 53 outside the vapor deposition chamber 29 by wire, the transmission line is entangled with the revolution part rotation connection device 56 and the reversal part rotation connection device 55, and revolves revolvingly and periodically. There is a problem that (or it always rotates) and the film forming apparatus stops.

【0012】本発明は前記課題を解決するために、膜厚
モニターと基板ホルダーが同じ動きができる位置であ
り、かつ基板の近傍に膜厚モニターが配置されている成
膜装置において、蒸着室内部に膜厚モニターの情報を送
信する無線方式の送信機を設置し、該送信機の信号を受
信する受信機を蒸着室内部または蒸着室外部に設置する
ことを目的とする。
In order to solve the above-mentioned problems, the present invention provides a film forming apparatus in which a film thickness monitor and a substrate holder can be moved in the same position, and a film thickness monitor is arranged near the substrate. It is an object of the present invention to install a wireless transmitter for transmitting the information of the film thickness monitor and to install a receiver for receiving the signal of the transmitter inside the vapor deposition chamber or outside the vapor deposition chamber.

【0013】[0013]

【課題を解決するための手段】蒸着室と蒸着室の下部に
設置される蒸着源と、蒸着源上部に設置され膜が形成さ
れる基板を整列固定する基板ホルダーと、該基板ホルダ
ーをガイド固定し該基板ホルダーを蒸着源の上部で回転
させる蒸着治具と、基板に形成される膜厚を監視する膜
厚モニターと、該膜厚モニターの情報により蒸着源をコ
ントロールする制御装置より構成され、膜厚モニターと
基板ホルダーが同じ動きができる位置であり、かつ基板
の近傍に膜厚モニターが配置されている成膜装置におい
て、蒸着室内部に膜厚モニターの情報を送信する無線方
式の送信機を設置し、該送信機の信号を受信する受信機
を蒸着室内部または蒸着室外部に設置する。
Means for Solving the Problems A vapor deposition chamber, a vapor deposition source installed in the lower portion of the vapor deposition chamber, a substrate holder installed in the upper portion of the vapor deposition source for aligning and fixing a substrate on which a film is to be formed, and a guide holder for fixing the substrate holder. Then, it comprises a vapor deposition jig that rotates the substrate holder above the vapor deposition source, a film thickness monitor that monitors the film thickness formed on the substrate, and a controller that controls the vapor deposition source based on the information from the film thickness monitor. A wireless transmitter that transmits film thickness monitor information to the inside of the deposition chamber in a film deposition apparatus where the film thickness monitor and the substrate holder are in the same position and the film thickness monitor is located near the substrate. And a receiver for receiving the signal of the transmitter is installed inside or outside the deposition chamber.

【0014】膜厚モニター及び膜厚モニターの情報を送
信する無線方式の送信機を蒸着治具に設置する。
A film thickness monitor and a wireless transmitter for transmitting information of the film thickness monitor are installed on the evaporation jig.

【0015】膜厚モニター及び膜厚モニターの情報を送
信する無線方式の送信機を基板ホルダーに設置する。
A film thickness monitor and a wireless transmitter for transmitting information of the film thickness monitor are installed on the substrate holder.

【0016】[0016]

【発明の実施の形態】図6、図7及び図8は本発明を説
明するための成膜装置内部の模式を示す正面断面図であ
り、図9、図10は本発明を説明するための成膜装置内
部の模式を示す底面図である。
BEST MODE FOR CARRYING OUT THE INVENTION FIGS. 6, 7 and 8 are front cross-sectional views schematically showing the inside of a film forming apparatus for explaining the present invention, and FIGS. 9 and 10 are for explaining the present invention. It is a bottom view which shows the model inside a film-forming apparatus.

【0017】図6において、従来技術と異なるのは蒸着
治具21に膜厚モニター22と該膜厚モニター22の情
報を送信する無線方式の送信機60を設置し、蒸着室2
9の内部に膜厚モニター22の情報を受信する無線方式
の受信機61を設置し、受信機61と制御装置53を電
気的に接続したことである。成膜中、基板ホルダー24
に多数整列収納されたワーク振動子40と蒸着治具21
に設置された膜厚モニター22は反転(180度回転)
又は常に自転し、かつ蒸着室29の中心に対して公転し
ている。蒸着のレートと蒸着膜厚の制御は、膜厚モニタ
ー22内のモニター振動子30の振動周波数の変化を蒸
着膜厚に換算することで行われる。成膜中、モニター振
動子30の振動周波数は発振回路23で発振し蒸着治具
21に設置された送信機60に伝送される。送信機60
はモニター振動子30の振動周波数を無線方式にて送信
し、送信された信号を蒸着室29の内部に設置された受
信機61で受信し、モニター振動子30の振動周波数は
制御装置53に入力される。制御装置53は蒸着源26
を制御し、目的の成膜を行う。
In FIG. 6, what is different from the prior art is that a vapor deposition jig 21 is provided with a film thickness monitor 22 and a wireless transmitter 60 for transmitting information of the film thickness monitor 22, and the vapor deposition chamber 2
The wireless receiver 61 for receiving the information of the film thickness monitor 22 is installed inside the device 9, and the receiver 61 and the control device 53 are electrically connected. Substrate holder 24 during film formation
A large number of work vibrators 40 and vapor deposition jigs 21 that are aligned and housed in
The film thickness monitor 22 installed at the position is inverted (rotated 180 degrees)
Or, it always rotates and revolves around the center of the vapor deposition chamber 29. The vapor deposition rate and the vapor deposition film thickness are controlled by converting the change in the vibration frequency of the monitor oscillator 30 in the film thickness monitor 22 into the vapor deposition film thickness. During film formation, the vibration frequency of the monitor vibrator 30 is oscillated by the oscillation circuit 23 and transmitted to the transmitter 60 installed in the vapor deposition jig 21. Transmitter 60
Transmits the vibration frequency of the monitor vibrator 30 by a wireless method, receives the transmitted signal by a receiver 61 installed inside the deposition chamber 29, and inputs the vibration frequency of the monitor vibrator 30 to the control device 53. To be done. The control device 53 is the vapor deposition source 26.
Is controlled to perform the target film formation.

【0018】図7は、基板ホルダー24に膜厚モニター
22と該膜厚モニター22の情報を送信する無線方式の
送信機60を設置し蒸着室29の内部に膜厚モニター2
2の情報を受信する無線方式の受信機61を設置し、受
信機61と制御装置53と電気的に接続した構成であ
る。成膜中、基板ホルダー24に多数整列収納されたワ
ーク振動子40と基板ホルダー24に設置された膜厚モ
ニター22は反転(180度回転)又は常に自転し、か
つ蒸着室29の中心に対して公転している。蒸着のレー
トと蒸着膜厚の制御は膜厚モニター22内のモニター振
動子30の振動周波数の変化を蒸着膜厚に換算すること
で行われる。成膜中、モニター振動子30の振動周波数
は、発振回路23で発振し、基板ホルダー24に設置さ
れた送信機60に伝送される。送信機60はモニター振
動子30の振動周波数を無線方式にて送信し、送信され
た信号を蒸着室29の内部に設置された受信機61で受
信し、モニター振動子30の振動周波数は制御装置53
に入力される。制御装置53は蒸着源26を制御し、目
的の成膜を行う。
In FIG. 7, a film thickness monitor 22 and a wireless transmitter 60 for transmitting information of the film thickness monitor 22 are installed on the substrate holder 24, and the film thickness monitor 2 is installed inside the vapor deposition chamber 29.
This is a configuration in which a wireless receiver 61 for receiving the second information is installed and the receiver 61 and the control device 53 are electrically connected. During film formation, the work vibrators 40, which are arranged in a large number in the substrate holder 24, and the film thickness monitor 22 installed in the substrate holder 24 are inverted (rotated by 180 degrees) or constantly rotated, and with respect to the center of the vapor deposition chamber 29. It is revolving around. The vapor deposition rate and the vapor deposition film thickness are controlled by converting the change in the vibration frequency of the monitor oscillator 30 in the film thickness monitor 22 into the vapor deposition film thickness. During film formation, the vibration frequency of the monitor oscillator 30 is oscillated by the oscillation circuit 23 and transmitted to the transmitter 60 installed in the substrate holder 24. The transmitter 60 wirelessly transmits the vibration frequency of the monitor vibrator 30, and the receiver 61 installed inside the deposition chamber 29 receives the transmitted signal, and the vibration frequency of the monitor vibrator 30 is controlled by the control device. 53
Is input to The controller 53 controls the vapor deposition source 26 to perform the target film formation.

【0019】図8は、蒸着治具21に膜厚モニター22
と該膜厚モニター22の情報を送信する無線方式の送信
機60を設置し、蒸着室29の外部に膜厚モニター22
の情報を受信する無線方式の受信機61を設置し、受信
機61と制御装置53と電気的に接続した構成である。
成膜中、基板ホルダー24に多数整列収納されたワーク
振動子40と蒸着治具21に設置された膜厚モニター2
2は反転(180度回転)又は常に自転し、かつ蒸着室
29の中心に対して公転している。蒸着のレートと蒸着
膜厚の制御は膜厚モニター22内のモニター振動子30
の振動周波数の変化を蒸着膜厚に換算することで行われ
る。成膜中、モニター振動子30の振動周波数は、発振
回路23で発振し、蒸着治具21に設置された送信機6
0に伝送される。送信機60はモニター振動子30の振
動周波数を無線方式にて送信し、送信された信号を蒸着
室29の外部に設置された受信機61で受信し、モニタ
ー振動子30の振動周波数は制御装置53に入力され
る。制御装置53は蒸着源26を制御し、目的の成膜を
行う。
In FIG. 8, a film thickness monitor 22 is attached to the vapor deposition jig 21.
And a transmitter 60 of a wireless system for transmitting information of the film thickness monitor 22 is installed, and the film thickness monitor 22 is provided outside the deposition chamber 29.
This is a configuration in which a wireless receiver 61 for receiving information is installed and the receiver 61 and the control device 53 are electrically connected.
During film formation, a plurality of work vibrators 40 arranged in a row in the substrate holder 24 and a film thickness monitor 2 installed on the vapor deposition jig 21.
No. 2 is inverted (rotated by 180 degrees) or always rotates and revolves around the center of the vapor deposition chamber 29. The vapor deposition rate and the vapor deposition film thickness are controlled by the monitor oscillator 30 in the film thickness monitor 22.
It is performed by converting the change of the vibration frequency of the above into the vapor deposition film thickness. During film formation, the oscillation frequency of the monitor oscillator 30 oscillates in the oscillation circuit 23 and the transmitter 6 installed in the vapor deposition jig 21.
0 is transmitted. The transmitter 60 wirelessly transmits the vibration frequency of the monitor vibrator 30, and the receiver 61 installed outside the vapor deposition chamber 29 receives the transmitted signal, and the vibration frequency of the monitor vibrator 30 is controlled by the control device. It is input to 53. The controller 53 controls the vapor deposition source 26 to perform the target film formation.

【0020】図9は、図6で示した膜厚モニター22と
無線方式の送信機60の設置場所を詳細に説明するため
の成膜装置内部の模式を示す底面図である。蒸着治具2
1は全体が矢印の方向に回転(蒸着室29の中心に対し
て公転)し、全体が1回転すると個々の蒸着治具21が
反転(180度回転)するようになっており、反転のつ
ど蒸着される面が変わる。必要であれば蒸着治具21を
自公転するようにしても良い。膜厚モニター22と無線
方式の送信機60は蒸着治具21に設置してあり、膜厚
モニター22の信号は無線方式の送信機60より送信さ
れる。
FIG. 9 is a bottom view schematically showing the inside of the film forming apparatus for explaining the installation locations of the film thickness monitor 22 and the wireless transmitter 60 shown in FIG. 6 in detail. Deposition jig 2
1 rotates in the direction of the arrow (revolves with respect to the center of the vapor deposition chamber 29), and when the whole rotates once, each vapor deposition jig 21 is inverted (rotated by 180 degrees). The surface to be vapor-deposited changes. If necessary, the evaporation jig 21 may be revolved around its own axis. The film thickness monitor 22 and the wireless transmitter 60 are installed on the vapor deposition jig 21, and the signal of the film thickness monitor 22 is transmitted from the wireless transmitter 60.

【0021】図10は、図7で示した膜厚モニター22
と無線方式の送信機60の設置場所を詳細に説明するた
めの成膜装置内部の模式を示す底面図である。蒸着治具
21にガイド固定された基板ホルダー24は全体が矢印
の方向に回転(蒸着室29の中心に対して公転)し、全
体が1回転すると個々の基板ホルダー24が反転(18
0度回転するようになっており、反転のつど蒸着の面が
変わる。必要であれば基板ホルダー24を自公転するよ
うにしても良い。膜厚モニター22と無線方式の送信機
60は基板ホルダー24に設置してあり、膜厚モニター
22の信号は無線方式の送信機60より送信される。
FIG. 10 shows the film thickness monitor 22 shown in FIG.
FIG. 3 is a bottom view schematically showing the inside of the film forming apparatus for explaining the installation location of the wireless transmitter 60 in detail. The substrate holder 24 fixed to the vapor deposition jig 21 is rotated in the direction of the arrow (revolves with respect to the center of the vapor deposition chamber 29), and when the whole is rotated once, the individual substrate holders 24 are inverted (18
It is designed to rotate 0 degrees, and the surface of vapor deposition changes each time it is inverted. If necessary, the substrate holder 24 may be revolved around its own axis. The film thickness monitor 22 and the wireless transmitter 60 are installed on the substrate holder 24, and the signal of the film thickness monitor 22 is transmitted from the wireless transmitter 60.

【0022】以上要約すると、成膜中、蒸着治具21又
は基板ホルダー24に設置された膜厚モニター22内に
あるモニター振動子30の振動周波数は発振回路23で
発振し蒸着治具21又は基板ホルダー24に設置された
送信機60に伝送される。送信機60はモニター振動子
30の振動周波数を無線方式にて送信し、蒸着室29の
内部又は外部に設置された受信機61で受信し、モニタ
ー振動子30の振動周波数は制御装置53に入力され
る。制御装置53は蒸着源26を制御し目的の成膜を行
う。
In summary, during the film formation, the vibration frequency of the monitor oscillator 30 in the film thickness monitor 22 installed in the vapor deposition jig 21 or the substrate holder 24 is oscillated by the oscillation circuit 23 to cause the vapor deposition jig 21 or the substrate. It is transmitted to the transmitter 60 installed in the holder 24. The transmitter 60 wirelessly transmits the vibration frequency of the monitor vibrator 30, and the receiver 61 installed inside or outside the deposition chamber 29 receives the vibration frequency, and the vibration frequency of the monitor vibrator 30 is input to the control device 53. To be done. The controller 53 controls the vapor deposition source 26 to perform the target film formation.

【0023】[0023]

【発明の効果】膜厚モニターと基板ホルダーが同じ動き
ができる位置であり、かつ基板の近傍に設置されている
成膜装置において、蒸着室内部に膜厚モニターの情報を
送信する無線方式の送信機を設置し送信機の信号を受信
する受信機を蒸着室の内部又は外部に設置したことによ
り、成膜中、膜厚モニターが反転(又は常に自転)かつ
公転しても膜厚モニターの振動周波数は制御装置に入力
でき、制御装置は蒸着源を制御し目的の成膜を行うこと
ができる。
EFFECT OF THE INVENTION In a film forming apparatus in which the film thickness monitor and the substrate holder are in the same position and is installed near the substrate, a wireless transmission for transmitting the information of the film thickness monitor to the inside of the deposition chamber. The film thickness monitor oscillates even when the film thickness monitor is inverted (or always spinning) and revolves during film formation by installing the receiver inside the vapor deposition chamber and the receiver that receives the signal from the transmitter. The frequency can be input to the control device, and the control device can control the vapor deposition source to perform the target film formation.

【0024】膜厚モニター及び膜厚モニターの情報を送
信する無線方式の送信機を蒸着治具又は基板ホルダーに
設置したことにより、成膜中、膜厚モニターが反転(又
は常に自転)かつ公転しても膜厚モニターの振動周波数
は制御装置に入力でき、制御装置は蒸着源を制御し目的
の成膜を行うことができる。
By installing a film thickness monitor and a wireless transmitter for transmitting information of the film thickness monitor on the evaporation jig or the substrate holder, the film thickness monitor is inverted (or always rotated) and revolves during film formation. However, the vibration frequency of the film thickness monitor can be input to the control device, and the control device can control the evaporation source to perform the desired film formation.

【図面の簡単な説明】[Brief description of drawings]

【図1】矩形状ATカット水晶振動子の斜視図。FIG. 1 is a perspective view of a rectangular AT-cut quartz resonator.

【図2】従来技術による成膜装置内部の模式を示す正面
断面図。
FIG. 2 is a front sectional view schematically showing the inside of a film forming apparatus according to a conventional technique.

【図3】従来技術による成膜装置内部の模式を示す底面
図。
FIG. 3 is a bottom view showing a schematic diagram of the inside of a film forming apparatus according to a conventional technique.

【図4】モニター振動子に使用する丸形のATカット水
晶振動片。
[FIG. 4] A round AT-cut crystal vibrating piece used for a monitor vibrator.

【図5】矩形状ATカット水晶振動片の斜視図。FIG. 5 is a perspective view of a rectangular AT-cut crystal vibrating piece.

【図6】本発明による成膜装置内部の模式を示す正面断
面図。
FIG. 6 is a front sectional view schematically showing the inside of the film forming apparatus according to the present invention.

【図7】本発明による成膜装置内部の模式を示す正面断
面図。
FIG. 7 is a front sectional view schematically showing the inside of the film forming apparatus according to the present invention.

【図8】本発明による成膜装置内部の模式を示す正面断
面図。
FIG. 8 is a front sectional view schematically showing the inside of the film forming apparatus according to the present invention.

【図9】本発明による成膜装置内部の模式を示す底面
図。
FIG. 9 is a bottom view schematically showing the inside of the film forming apparatus according to the present invention.

【図10】本発明による成膜装置内部の模式を示す底面
図。
FIG. 10 is a bottom view schematically showing the inside of the film forming apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

1 金属カバー 2 ATカット水晶振動片 3 電極 4 気密端子 5 リード端子 21 蒸着治具 22 膜厚モニター 23 発振回路 24 基板ホルダー 25 蒸着材料 26 蒸着源 29 蒸着室 30 モニター振動子 31 電極 40 矩形状ATカット水晶振動片 53 制御装置 55 反転部回転接続装置 56 公転部回転接続装置 60 送信機 61 受信機 DESCRIPTION OF SYMBOLS 1 Metal cover 2 AT cut crystal vibrating piece 3 Electrode 4 Airtight terminal 5 Lead terminal 21 Vapor deposition jig 22 Film thickness monitor 23 Oscillation circuit 24 Substrate holder 25 Vapor deposition material 26 Vapor deposition source 29 Vapor deposition chamber 30 Monitor oscillator 31 Electrode 40 Rectangular AT Cut crystal vibrating piece 53 Control device 55 Reversing part rotation connecting device 56 Revolution part rotation connecting device 60 Transmitter 61 Receiver

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 蒸着室と蒸着室の下部に設置される蒸着
源と、蒸着源上部に設置され膜が形成される基板を整列
固定する基板ホルダーと、該基板ホルダーをガイド固定
し該基板ホルダーを蒸着源の上部で回転させる蒸着治具
と、基板に形成される膜厚を監視する膜厚モニターと、
該膜厚モニターの情報により蒸着源をコントロールする
制御装置より構成され、膜厚モニターと基板ホルダーが
同じ動きができる位置であり、かつ基板の近傍に膜厚モ
ニターが配置されている成膜装置において、蒸着室内部
に膜厚モニターの情報を送信する無線方式の送信機を設
置し、該送信機の信号を受信する受信機を蒸着室内部ま
たは蒸着室外部に設置したことを特徴とする成膜装置。
1. A vapor deposition chamber, a vapor deposition source installed in the lower portion of the vapor deposition chamber, a substrate holder disposed above the vapor deposition source for aligning and fixing a substrate on which a film is formed, and a substrate holder for guiding and fixing the substrate holder. A vapor deposition jig that rotates above the vapor deposition source, and a film thickness monitor that monitors the film thickness formed on the substrate,
A film forming apparatus comprising a control device for controlling a vapor deposition source according to the information of the film thickness monitor, at a position where the film thickness monitor and the substrate holder can move in the same manner, and in which the film thickness monitor is arranged near the substrate. A film forming method characterized in that a transmitter of a wireless system for transmitting information of a film thickness monitor is installed inside the deposition chamber, and a receiver for receiving a signal of the transmitter is installed inside or outside the deposition chamber. apparatus.
【請求項2】 膜厚モニター及び膜厚モニターの情報を
送信する無線方式の送信機が蒸着治具に設置されている
ことを特徴とする請求項1記載の成膜装置。
2. The film forming apparatus according to claim 1, wherein a film thickness monitor and a wireless transmitter for transmitting information of the film thickness monitor are installed on the vapor deposition jig.
【請求項3】 膜厚モニター及び膜厚モニターの情報を
送信する無線方式の送信機が基板ホルダーに設置されて
いることを特徴とする請求項1記載の成膜装置。
3. The film forming apparatus according to claim 1, wherein a film thickness monitor and a wireless transmitter for transmitting information of the film thickness monitor are installed in the substrate holder.
JP9016896A 1996-03-18 1996-03-18 Film forming device Pending JPH09256155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9016896A JPH09256155A (en) 1996-03-18 1996-03-18 Film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9016896A JPH09256155A (en) 1996-03-18 1996-03-18 Film forming device

Publications (1)

Publication Number Publication Date
JPH09256155A true JPH09256155A (en) 1997-09-30

Family

ID=13990964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9016896A Pending JPH09256155A (en) 1996-03-18 1996-03-18 Film forming device

Country Status (1)

Country Link
JP (1) JPH09256155A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006206969A (en) * 2005-01-28 2006-08-10 Showa Shinku:Kk Instrument and method for measuring film deposition rate of film deposition apparatus
WO2008065075A1 (en) * 2006-11-29 2008-06-05 Leica Microsystems Cms Gmbh Coating installation comprising a radio device and a measuring device
WO2008065073A1 (en) 2006-11-29 2008-06-05 Leica Microsystems Cms Gmbh Coating installation comprising a radio device and method for controlling an actuator or a heater
JP2008240105A (en) * 2007-03-28 2008-10-09 Showa Shinku:Kk Substrate holder, film deposition apparatus, and film deposition method
US7828929B2 (en) 2004-12-30 2010-11-09 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing
DE102014108348A1 (en) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Process for producing a coating and optoelectronic semiconductor component with a coating
WO2021021351A1 (en) * 2019-07-26 2021-02-04 Applied Materials, Inc. Substrate processing monitoring

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8182861B2 (en) 2004-12-30 2012-05-22 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing
US7828929B2 (en) 2004-12-30 2010-11-09 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing
GB2421738B (en) * 2004-12-30 2011-11-09 Res Electro Optics Inc Methods and devices for monitoring and controlling thin film processing
JP2006206969A (en) * 2005-01-28 2006-08-10 Showa Shinku:Kk Instrument and method for measuring film deposition rate of film deposition apparatus
JP4665160B2 (en) * 2005-01-28 2011-04-06 株式会社昭和真空 Apparatus and method for measuring film forming speed in film forming apparatus
WO2008065075A1 (en) * 2006-11-29 2008-06-05 Leica Microsystems Cms Gmbh Coating installation comprising a radio device and a measuring device
WO2008065073A1 (en) 2006-11-29 2008-06-05 Leica Microsystems Cms Gmbh Coating installation comprising a radio device and method for controlling an actuator or a heater
US20100055296A1 (en) * 2006-11-29 2010-03-04 Leica Microsystems Cms Gmbh Coating installation comprising a radio device and method for controlling an actuator or a heater
JP2008240105A (en) * 2007-03-28 2008-10-09 Showa Shinku:Kk Substrate holder, film deposition apparatus, and film deposition method
DE102014108348A1 (en) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Process for producing a coating and optoelectronic semiconductor component with a coating
CN106661721A (en) * 2014-06-13 2017-05-10 奥斯兰姆奥普托半导体有限责任公司 Method for producing a coating and optoelectronic semiconductor component having a coating
US9863033B2 (en) 2014-06-13 2018-01-09 Osram Opto Semiconductors Gmbh Method for producing a coating and optoelectronic semiconductor component having a coating
US10612126B2 (en) 2014-06-13 2020-04-07 Osram Opto Semiconductors Gmbh Method for producing a coating and optoelectronic semiconductor component having a coating
WO2021021351A1 (en) * 2019-07-26 2021-02-04 Applied Materials, Inc. Substrate processing monitoring

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