JP4665160B2 - Apparatus and method for measuring film forming speed in film forming apparatus - Google Patents

Description

  The present invention relates to an apparatus and a method for measuring a film thickness or a deposition rate of a substance deposited on a substrate.

  Conventionally, a crystal resonator has been used as a method for monitoring the film thickness and the film formation rate during the formation of a thin film. This utilizes the fact that the natural frequency of a crystal resonator changes with its mass, and changes in the vibration frequency caused by the thin film deposited on the crystal resonator It is converted to speed.

  In order to accurately monitor the deposition rate and thickness of the thin film deposited on the substrate, it is desirable to place the crystal unit as close to the substrate as possible. However, in the configuration where the substrate position changes during deposition, the internal electrical cable Since it is difficult to route, the crystal resonator is fixedly arranged at a position away from the substrate. In this case, since the film thickness deposited on the crystal resonator is different from the film thickness deposited on the substrate, it is necessary to input a correction value in advance to the film thickness controller, which is not only troublesome to input the correction value but also has poor measurement accuracy. There was a problem. In order to solve such a problem, even if the substrate position changes during film formation, a configuration in which the crystal resonator is moved together with the substrate and the crystal resonator and the substrate are always positioned under the same film formation conditions is, for example, a patent Documents 1-3 are disclosed.

  Patent Document 1 relates to a film thickness confirmation method in a continuous sputtering apparatus, in which a crystal resonator is attached to a tray to which a substrate is attached, and when the tray passes through a sputter electrode, contact extending from the film thickness controller to the crystal resonator. The thickness of the film formed on the substrate is confirmed by contacting the child.

  In Patent Document 2, a film thickness monitor and a wireless transmitter that transmits information on the film thickness monitor are installed inside the vapor deposition chamber, and information on the film thickness monitor is transmitted to a receiver installed inside or outside the vapor deposition chamber. It is.

In Patent Document 3, a sensor for measuring temperature, film thickness, pressure, floating potential, etc., which is information on the surface of a substrate to be processed is arranged in a vacuum chamber, and the data measured by the sensor is provided outside the vacuum chamber. It is transmitted wirelessly to the machine. In the embodiment, a transmitter including a sensor circuit, a modulation circuit, a transmission circuit, and a transmission antenna, and a receiver including a reception antenna, a reception circuit, a demodulation circuit, and processing / display means are shown.
Japanese Patent No. 3292925 JP 09-256155 A Japanese Patent Laid-Open No. 06-76193

  As the specifications required for thin film devices become stricter, not only the film thickness but also the film characteristics such as film packing density and refractive index are regarded as very important. Since these characteristics greatly depend on the film formation speed, it is extremely important to monitor the film formation speed in real time.

  However, in Patent Document 1, after the film formation is completed, the vibration frequency of the crystal resonator cannot be measured unless the tray in which the crystal resonator is incorporated moves to a position where the tray extends from the film thickness controller. Therefore, it is impossible to monitor the film formation speed in real time.

  Patent Document 2 enables film thickness measurement during film formation because the film thickness monitor information is transmitted wirelessly. However, the transmission wave is transmitted in one of the processes in which the transmitter of the film thickness monitor revolves with the substrate periodically. However, there is a position where the film is shielded by a substrate holder or the like, and it is not possible to monitor the film formation speed in real time. Further, since the substrate revolves and reverses, the distance between the receiver and the transmitter always changes. For example, some film forming apparatuses use an electron gun or generate plasma. If the distance between the transmitter and the transmitter changes in addition to the influence of noise or plasma of the electron gun, the transmission wave Cannot be transmitted and received stably, affecting measurement accuracy.

  Also in Patent Document 3, there is no description suggesting the contents of considering the shielding object and the distance between the transmitter and the transmitter with respect to receiving information from the transmitter whose position changes. Further, since the receiver is disposed outside the vacuum chamber, for example, when the substrate transport distance during film formation is large, it is difficult to monitor the film formation speed in real time from the beginning to the end of film formation.

An object of the present invention is to monitor a film thickness or a film formation speed in real time during film formation by a stable measuring means.
A first aspect of the present invention is a measuring apparatus for monitoring the thickness or amount of change in thickness of a substance deposited on a crystal resonator having an oscillation circuit, the transmitting means for transmitting the vibration frequency of the crystal resonator, A moving unit that moves the quartz crystal unit and the transmitting unit in conjunction with each other, and a receiving unit that receives the vibration frequency of the quartz crystal unit, and the transmission unit of the transmitting unit moves when the substance is deposited on the crystal unit. An arbitrary point in the path and the receiving unit of the receiving means are always kept at a substantially constant distance.

  According to a second aspect of the present invention, there is provided a measuring apparatus for monitoring a film thickness or a film thickness change amount of a substance deposited on a substrate in a vacuum apparatus having a vacuum chamber, a substrate film forming unit, and a substrate moving unit. A crystal unit having an oscillation circuit, a transmission unit that transmits a vibration frequency of the crystal unit, a reception unit that receives a vibration frequency of the crystal unit, the crystal unit is disposed close to the substrate, and the moving unit is The substrate, the crystal unit, and the transmission unit are moved in conjunction with each other, and any one point in the moving path along which the transmission unit of the transmission unit moves during film formation on the substrate is always at a substantially constant distance. The film thickness of the substance deposited on the crystal resonator or the amount of change in the film thickness is monitored to monitor the film thickness of the substance deposited on the substrate.

  According to a third aspect of the present invention, in any one of the first and second aspects, the receiving unit is covered with a moving path of the transmitting unit, and has a face body structure facing the moving path with a predetermined distance. did.

  According to a fourth aspect of the present invention, in any one of the first and second aspects, the transmission unit is a transmission-side antenna, the reception unit is a reception-side antenna, and the vibration frequency of the crystal resonator is contactlessly transmitted as an electromagnetic wave. It was. The transmission means comprises a modulation unit that modulates a signal output from the oscillation circuit of the crystal resonator, a transmission side amplification unit that amplifies the signal modulated in the modulation unit, and a transmission side antenna that transmits the amplified signal, The receiving means is composed of a receiving antenna that receives a signal from the transmitting antenna, a receiving amplifier that amplifies the signal received by the receiving antenna, and a detector that detects the amplified signal.

  According to a fifth aspect of the present invention, in any one of the first and second aspects, the transmission unit is a transmission side electrode, the reception unit is a reception side electrode, and the vibration frequency of the crystal resonator is the transmission side electrode and the reception side electrode. And non-contact transmission by capacitive coupling. The transmission means comprises a transmission side electrode, a modulation unit that modulates a signal output from the oscillation circuit of the crystal resonator, and a voltage application unit that applies a voltage corresponding to the signal modulated in the modulation unit to the transmission side electrode, The receiving means is composed of a receiving electrode facing the transmitting electrode and a demodulator that demodulates the signal received via the receiving electrode.

  The sixth aspect of the present invention is configured to supply power to the transmission means in a contactless manner. A configuration in which a power transmission coil and a power reception coil are used, and a magnetic flux generated by the power transmission coil is linked to the power reception coil by electromagnetic coupling to supply power to the transmission means by exciting an induced voltage. did.

  In the first to sixth aspects, the film forming means may be a sputtering means for depositing a target material disposed on the sputtering electrode on the substrate by energization.

  According to a seventh aspect of the present invention, there is provided a vacuum chamber, a substrate film forming means, a substrate transport tray, a deposition plate fixedly disposed in the vacuum chamber, a crystal resonator disposed in the proximity of the substrate, and a crystal resonator Oscillation circuit, modulation unit that modulates the signal obtained by connecting to the oscillation circuit of the crystal resonator, transmission side amplification unit that amplifies the signal modulated by the modulation unit, and signal amplified by the transmission side amplification unit as radio waves A transmitting antenna for transmitting, a receiving antenna for receiving radio waves transmitted from the transmitting antenna, a receiving amplifier for amplifying a signal received by the receiving antenna, and a detector for detecting the signal amplified by the receiving amplifier. A quartz resonator, a modulation unit, a transmission-side amplification unit, and a transmission-side antenna are arranged on the transfer tray, and at least a predetermined distance away from a moving path along which the transfer tray moves during film formation on the substrate In the facing position The substrate is covered, the shield plate is connected to the reception-side amplifier as the reception-side antenna, and the film thickness of the substance deposited on the crystal resonator or the amount of change in the film thickness is monitored, thereby forming the substrate on the substrate. The film thickness or the film formation speed was always measured and monitored in the film.

  According to an eighth aspect of the present invention, there is provided a film forming apparatus including the measuring apparatus according to any one of the first to seventh aspects, and a configuration in which means for controlling a film forming speed is provided based on a measurement result of the measuring apparatus. did.

  According to a ninth aspect of the present invention, there is provided a method for measuring a film thickness or a film thickness change amount when a thin film is formed on a crystal resonator, wherein the transmitting means transmits the vibration frequency of the crystal resonator, the crystal resonator, and the transmission A driving means for changing the position by interlocking the means, and a receiving means for receiving the vibration frequency of the crystal unit from the transmitting means, and the distance between the transmitting means and the receiving means even if the transmitting means position is changed by the driving means; This is a measurement method that always keeps constant.

  According to a tenth aspect of the present invention, there is provided a method for measuring a film thickness and a film thickness change amount when a thin film is formed on a substrate. Transmitting means for transmitting, substrate, crystal resonator, driving means for changing the position in conjunction with the transmitting means, and receiving means for receiving the vibration frequency of the crystal resonator from the transmitting means. This is a measurement method in which the distance between the transmitting means and the receiving means is always kept substantially constant even if the distance changes.

  Even if the transmission means for transmitting the vibration frequency of the crystal resonator changes its position, the distance between the reception means and the transmission means for the vibration frequency can be kept substantially constant at all times, so that stable signal exchange can be performed.

  A first embodiment of the present invention will be described. In the following first to third embodiments, the continuous sputtering apparatus shown in FIGS. 1 and 2 is used, but the apparatus on which the measuring means of the present invention can be mounted is not limited to this. For example, the film forming means is not limited to sputtering, and vacuum deposition, IAD (Ion Assisted Deposition), or the like may be used.

  In the figure, a film forming chamber 1 is provided with a gas inlet port 2, an exhaust port 3, and a sputter electrode 4, and a charging chamber 6 that can be changed to a vacuum pressure and an atmospheric pressure via a partition valve 5 on the left and right sides of the film forming chamber 1. A take-out chamber 7 is provided. In the preparation chamber 6, for example, a plurality of plate-like trays 9 incorporating the substrate 8 are accommodated. The tray 9 is sequentially fed from the preparation chamber 6 into the film forming chamber 1 through the partition valve 5, and is sent out from the film forming chamber 1 to the take-out chamber 7 through the partition valve 5. The tray 9 is conveyed by a drive mechanism 11 connected to a power source 13, and reference numeral 10 in the drawing denotes a transfer path for the tray 9. The sputtering power source 12 is a power source that supplies power to the sputtering electrode 4. In the figure, the sputter electrode 4 is provided only on one side of the transfer path 10, but the sputter electrode may be provided on both sides of the transfer path and the substrate 8 may be formed on both sides.

  The tray 9 incorporates a crystal resonator 15 and a transmission means 16 for transmitting the vibration frequency of the crystal resonator 15, and the crystal resonator 15 is attached at a position close to the film formation surface of the substrate 8. The film forming chamber 1 is provided with receiving means 17 for receiving the oscillation signal transmitted from the transmitting means 16 and is connected to a known film thickness controller 14 having, for example, an oscillation circuit and an arithmetic circuit. The tray 9 is moved at a predetermined transport speed on the transfer path by the drive mechanism 11. When the tray 9 passes the front surface of the sputtering electrode 4, the sputtered substance from the target 14 fixed to the sputtering electrode 4 is transferred to the substrate 8. A film is formed. At the same time, since a thin film having the same thickness as that of the substrate 8 is formed on the crystal resonator 15 incorporated in the tray 9, the film thickness controller 14 determines the film thickness or film deposited on the substrate 8 from the oscillation signal of the crystal resonator 15. Detect thickness change. Since the apparatus shown in the figure transmits vibration frequency using the non-contact transmission means 16 and reception means 17, real-time measurement during film formation is possible even when the position of the crystal resonator changes during film formation. Therefore, since the crystal resonator for measurement can be placed under the same film formation conditions as the substrate, high-precision film formation control is possible. In this case, a control device (not shown) may be connected to the film thickness controller 14, and the control device may be connected to the sputtering power source 12 or the power source 13 to control the film forming speed and the like.

The first embodiment is characterized in that the vibration frequency of the crystal unit 15 is converted into an electric signal suitable for transmission, and the radio wave is radiated from an antenna.
FIG. 3 shows a schematic diagram of the transmitting means 16 and the receiving means 17 in the first embodiment. The transmission means 16 shown in the figure includes an oscillation unit 20, a modulation unit 21, a transmission side amplification unit 22, and a transmission side antenna 23 built in the tray 9. The crystal unit 15 incorporated on the surface of the tray 9 is connected to the oscillation unit 20, and the oscillation unit 20 oscillates at a vibration frequency unique to the crystal unit. The obtained oscillation signal is input to the modulation unit 21 and the carrier wave is modulated. In the embodiment, it is assumed that the carrier wave is ASK modulated (amplitude shift keying), but other modulation methods such as AM modulation, FM modulation, and FSK modulation may be used in addition to ASK modulation. The modulated carrier wave is amplified by the transmission side amplification unit 22 and transmitted as a radio wave via the transmission side antenna 23.

  The receiving means 17 shown in FIG. 1 includes a receiving side antenna 24, a receiving side amplifying unit 25, and a detecting unit 26 fixedly disposed on the inner wall of the film forming chamber 1. A signal transmitted from the transmitting antenna 23 is received via the receiving antenna 24, and a weak signal is amplified in the receiving amplifier 25. The amplified signal is detected by the detection unit 26, and a signal having the same frequency as the vibration frequency of the crystal resonator 15 is output. This signal is input to the film thickness controller 14 to measure the film thickness or film forming speed.

  In the film forming apparatus, an adhesion preventing plate is generally disposed for the purpose of preventing the inner wall from being contaminated by the target material released from the film forming means. Since the deposition preventing plate has a shape that covers the film formation region, the transmission receiving antenna 23 is integrated with the substrate 8 by arranging the deposition preventing plate in parallel with the transfer path of the substrate and using it as the receiving antenna 24. Therefore, even if the mobile station moves, the distance between the transmitting antenna 23 and the receiving antenna 24 is always maintained, and the oscillation signal can be transmitted stably. In the apparatus shown in the figure, the deposition plate generally provided in the film forming apparatus is also used as the reception-side antenna 24, thereby contributing to the reduction of the number of parts and the simplification of the configuration. 24 may be provided separately. The reception side antenna 24 may be configured to always maintain a substantially constant distance from any one point in the transfer path 10 along which the transmission side antenna 23 moves during film formation.

  FIG. 4 is a schematic perspective view of the receiving antenna 23 and the transmitting antenna 24. In the figure, the tray 9 moving in the direction of the arrow on the transfer path 10 is indicated by a broken line, but the distance between the transmitting antenna 23 and the receiving antenna 24 is always kept constant even if the tray 9 moves. I understand.

  In the first embodiment, any electromagnetic wave including a light region may be used as a medium, the electromagnetic wave may be radiated from the transmission side, and the reception side may capture the electromagnetic wave to transmit the oscillation signal in a non-contact manner. Thus, the transmission side may emit signal light and the reception side may receive signal light using a light receiver or the like.

Next, a second embodiment of the present invention will be described. The second embodiment is characterized in that a transmission-side electrode and a reception-side electrode are used and an oscillation signal of a crystal resonator is transmitted in a non-contact manner by capacitive coupling between the electrodes. Since the parts other than the transmitting means and the receiving means are the same as those in the first embodiment, the description of the same parts is omitted.
FIG. 5 shows a schematic diagram of the transmitting means 16 and the receiving means 17 in the second embodiment. The transmission unit 16 in FIG. 1 includes an oscillation unit 30 of the crystal unit 15, a modulation unit 31 that modulates an oscillation signal, a transmission-side electrode 33, and a voltage application unit 32 that applies a voltage corresponding to the modulation signal to the transmission-side electrode 33. The receiving means 17 includes a receiving electrode 34 facing the transmitting electrode 33 and a demodulator 35 that demodulates the signal received via the receiving electrode 34.

  FIG. 6 is a schematic perspective view of the reception side electrode 34 and the transmission side electrode 33. In the figure, the convex transmission side electrode 33 is inserted into the concave reception side electrode 34 with a predetermined gap. For example, the reception side electrode may be convex and the transmission side electrode may be concave. What is necessary is just to select the shape of an electrode suitably, and just to comprise so that a capacity | capacitance may be formed between the electrodes which face. The transmission-side electrode 33 is fixedly arranged in the tray 9 and the reception-side electrode 34 is fixedly arranged in the film forming chamber 1 so as to cover the transfer path 10 along which the transmission-side electrode 33 moves during film formation. In the figure, the tray 9 moving in the direction of the arrow on the transfer path 10 is indicated by a broken line. However, even if the tray 9 moves, the distance and area between the transmission side electrode 33 and the reception side electrode 34 are always kept constant. Therefore, there is no change in the capacitance between the electrodes, and the oscillation signal can be transmitted stably. In the embodiment, the gap between the electrodes is equal to the atmosphere in the vacuum chamber, but a dielectric may be filled between the electrodes.

Next, a third embodiment of the present invention will be described. The third embodiment is characterized in that power is supplied to the transmission means in a contactless manner. Since the part excluding the power supply means is the same as in the first and second embodiments, the description of the same part is omitted.
FIG. 7 shows a schematic diagram of the power supply means in the third embodiment. The power supply means shown in FIG. 1 includes a power reception coil 40 provided on the transmission means 16 side, a power transmission coil 41 provided on the reception means 17 side, and a power transmission oscillation unit 43. In the figure, it is assumed that the magnetic flux 42 generated by the power transmission coil 41 is linked to the power reception coil 40 by electromagnetic coupling and supplies the power to the transmission means 16 by exciting the induced voltage. The induced voltage of the power receiving coil 40 is rectified by a rectifier circuit in the transmission unit 16 and used as a power source for each circuit in the transmission unit 16.

  Since the power transmission coil 41 is provided in the reception antenna 24 or the reception electrode 34 and the power reception coil 40 is provided in the transmission antenna 23 or the transmission electrode 33, the distance between the coils is maintained. Stable power supply is possible by suppressing fluctuations in power transmission efficiency.

  In the embodiment, the power supply means is provided separately. However, the power supply means may be incorporated in the oscillation signal transmission means 16 and the reception means 17. For example, in the first embodiment, an antenna coil is used for the transmitting antenna 23, a loop antenna is used for the receiving antenna 24, and an oscillation unit for supplying power is provided in the receiving means 17, so that the oscillation signal from the transmitting means 16 side can be obtained. It is also possible to perform transmission and power supply from the receiving means 17 side at the same time. Transmission of the oscillation signal from the transmitting means 16 side may be performed by electromagnetic induction from the antenna coil to the loop antenna.

  In the embodiment, an example in which a substrate on which a film is to be formed is conveyed in-line is described. However, the measuring means of the present invention can also be mounted in a batch-type film forming apparatus or a single-wafer type film forming apparatus. For example, when the substrate is mounted on a rotating holder such as a substrate dome, the transmitting means is fixedly disposed on the rotating holder, and the disk-shaped receiving means covering the upper surface of the rotating holder is fixedly disposed in the film forming chamber. . Alternatively, the receiving means may have a cylindrical shape covering the outer periphery of the substrate holder. Thereby, even if the substrate holder is rotationally driven at the time of film formation, the distance between the transmitting part and the receiving part of the vibration frequency is always constant, so that the signal can be stably transmitted. If the receiving part is shaped along the movement path of the substrate and the distance from the transmitting part is maintained at a predetermined distance even if the position of the substrate is changed, it can be applied to various film forming apparatuses.

  In the embodiment, the thin film deposited on the substrate is indirectly monitored using a crystal resonator. However, when the substrate on which the film is to be formed is a piezoelectric vibrator such as a crystal resonator, the vibration frequency of the actual substrate is set. You may monitor directly.

  In the embodiment, modulation was performed with the vibration frequency of the crystal resonator. However, the vibration frequency of the crystal resonator may be divided and modulated, and the vibration frequency of the crystal resonator may be amplified to remain at the vibration frequency. Wireless transmission may be performed.

  By attaching a plurality of crystal resonators and transmitting the vibration frequency of each, it is possible to monitor the film thickness distribution in real time.

  Further, by converting the potential difference of the thermocouple into a voltage / frequency instead of the crystal resonator and using this as a modulation signal, it is possible to measure the real time temperature during film formation.

Schematic sectional view of continuous sputtering equipment Outline plan view of continuous sputtering equipment Schematic diagram of transmission means and reception means in the first embodiment Schematic perspective view of a transmitting antenna and a receiving antenna in the first embodiment Schematic diagram of transmitting means and receiving means in the second embodiment Schematic diagram of transmitting and receiving electrodes in the second embodiment Schematic diagram of power transmission means in the third embodiment

Explanation of symbols

1 Deposition chamber
2 Gas inlet
3 Exhaust port
4 Sputter electrode
5 Gate valve
6 Preparation room
7 Extraction room
8 Board
9 trays
10 Transfer route
11 Drive mechanism
12 Sputter power supply
13 Power source
14 Film thickness controller
15 Quartz crystal
16 Transmission means
17 Receiving means
20 Oscillator
21 Modulator
22 Transmitter amplifier
23 Transmitting antenna
24 Receiver antenna
25 Receiver amplifier
26 Detector
30 Oscillator
31 Modulator
32 Voltage application section
33 Transmitter electrode
34 Receiver electrode
35 Demodulator
40 Power receiving coil
41 Coil for power transmission
42 Magnetic flux

Claims (13)

A measuring device for monitoring a film thickness or a film thickness change amount of a substance deposited on a crystal resonator having an oscillation circuit,
Transmission means for detecting and transmitting the vibration frequency of the crystal resonator, movement means for moving the crystal resonator and the transmission means along the movement path, and receiving the vibration frequency transmitted from the transmission means Receiving means for
The measuring means characterized in that the receiving means has a receiving part arranged in parallel with the moving path, and thereby the moving path and the receiving part are separated from each other by a substantially constant distance. apparatus.
In a vacuum apparatus having a vacuum chamber, a film forming means for a substrate, and a moving means for the substrate, a measuring device for monitoring a film thickness or a film thickness change amount of a substance deposited on the substrate,
A crystal unit having an oscillation circuit, a transmission unit that detects and transmits a vibration frequency of the crystal unit, and a reception unit that receives the vibration frequency transmitted from the transmission unit,
The quartz crystal is disposed close to the substrate;
The moving means is configured to move the substrate, the quartz crystal vibrator, and the transmitting means in conjunction with each other along a moving path;
The receiving means has a receiving unit arranged in parallel to the moving path, and is configured so that the moving path and the receiving unit are separated from each other by a substantially constant distance.
A measuring apparatus characterized in that the film thickness or film thickness change amount of a substance deposited on the substrate is monitored by monitoring the film thickness or film thickness change quantity of the substance deposited on the crystal resonator.
The measuring apparatus according to claim 1 or 2,
The transmitter is a transmitting antenna;
The receiver is a receiving antenna;
A measurement apparatus characterized in that the vibration frequency of the crystal resonator is transmitted in a non-contact manner as an electromagnetic wave.
The measuring apparatus according to claim 3, wherein
A modulation unit that modulates a signal output from the oscillation circuit of the crystal resonator, a transmission side amplification unit that amplifies the signal modulated in the modulation unit, and a transmission side antenna that transmits the amplified signal With
The receiving means includes a receiving antenna that receives a signal from the transmitting antenna, a receiving amplifier that amplifies the signal received by the receiving antenna, and a detector that detects the amplified signal. A measuring device.
The measuring apparatus according to claim 1 or 2,
The transmitter is a transmitter electrode;
The receiver is a receiving electrode;
A measurement apparatus, wherein the vibration frequency of the crystal resonator is transmitted in a non-contact manner by capacitive coupling between a transmission side electrode and a reception side electrode.
The measuring apparatus according to claim 5, wherein
The transmission means modulates a signal output from the transmission side electrode, the oscillation circuit of the crystal resonator, and a voltage application unit that applies a voltage corresponding to the signal modulated in the modulation unit to the transmission side electrode With
A measuring apparatus, wherein the receiving means includes a receiving electrode facing the transmitting electrode, and a demodulator that demodulates a signal received via the receiving electrode.
The measuring device according to claim 1, wherein
A measuring apparatus comprising means for supplying power to the transmitting means in a contactless manner.
The measuring device according to claim 7, wherein
The contactless power supply means includes a power transmission coil and a power reception coil, and a magnetic flux generated by the power transmission coil is linked to the power reception coil by electromagnetic coupling to excite an induced voltage. The measuring device is characterized in that power is supplied to the transmitting means.
The measuring apparatus according to any one of claims 2 to 8,
The film forming means is a sputtering means for depositing a target material disposed on a sputtering electrode on a substrate by energization.
A vacuum chamber, a substrate film forming means, a tray for transporting the substrate, a deposition plate fixedly disposed in the vacuum chamber, a crystal resonator disposed in the proximity of the substrate, an oscillation circuit of the crystal resonator, A modulation unit that modulates a signal obtained by connecting to an oscillation circuit of a crystal resonator, a transmission side amplification unit that amplifies the signal modulated by the modulation unit, and a signal that is amplified by the transmission side amplification unit is transmitted as a radio wave. A transmission-side antenna, a reception-side antenna that receives radio waves transmitted from the transmission-side antenna, a reception-side amplification unit that amplifies a signal received by the reception antenna, and detection that detects a signal amplified by the reception-side amplification unit Part
The crystal resonator, the modulation unit, the transmission side amplification unit, and the transmission side antenna are disposed on the transport tray,
The deposition plate is provided parallel to a moving path along which the transfer tray moves at least during film formation on the substrate;
The deposition plate is connected to the receiving-side amplifier as the receiving-side antenna;
By monitoring the film thickness or film thickness change amount of the substance deposited on the crystal resonator, the film thickness or film forming speed is measured or monitored during film formation on the substrate. Characteristic measuring device.
A film forming apparatus comprising the measurement apparatus according to claim 1,
A film forming apparatus comprising means for controlling a film forming speed based on a measurement result of the measuring apparatus.
A method for measuring a film thickness or a film thickness change amount when forming a thin film on a crystal resonator,
A transmitting step in which the transmitting means detects and transmits the vibration frequency of the crystal unit;
The driving means causes the quartz crystal vibrator and the transmission means to move together to change the position along the movement path, and the reception means having a receiving unit arranged in parallel with the movement path transmits from the transmission means. And a receiving step of receiving a vibration frequency of the crystal resonator.
A method of measuring a film thickness and a film thickness change amount when forming a thin film on a substrate,
A transmitting step in which the transmitting means detects and transmits the vibration frequency of the crystal resonator disposed in the proximity position of the substrate;
A driving unit that drives the substrate, the quartz crystal unit, and the transmission unit in conjunction with each other to change the position along the moving path; and a receiving unit that includes a receiving unit disposed in parallel with the moving path. A measuring method comprising a receiving step of receiving a vibration frequency of the crystal resonator transmitted from the means.

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