JPH09250454A - Driving method of vacuum treatment device - Google Patents
Driving method of vacuum treatment deviceInfo
- Publication number
- JPH09250454A JPH09250454A JP5729896A JP5729896A JPH09250454A JP H09250454 A JPH09250454 A JP H09250454A JP 5729896 A JP5729896 A JP 5729896A JP 5729896 A JP5729896 A JP 5729896A JP H09250454 A JPH09250454 A JP H09250454A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- gas
- vacuum chamber
- adsorption surface
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
- F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、クライオポンプが
備えられた真空処理装置の駆動方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for driving a vacuum processing apparatus equipped with a cryopump.
【０００２】[0002]
【従来の技術】半導体装置の製造工程では、例えば蒸着
装置，スパッタ装置またはエッチング装置のように真空
槽の内外に処理手段を設けてなる真空処理装置を用いる
ことによって、ウエハの表面に膜を形成したりウエハ表
面をエッチングしている。この際、上記処理が行われる
真空槽内は高い清浄度を保つことが要求される。そこ
で、このような真空処理装置に備えられる真空ポンプと
して、冷却した金属性の吸着面に真空槽内の気体を凝縮
捕捉するクライオポンプが多用されている。2. Description of the Related Art In a semiconductor device manufacturing process, a film is formed on a surface of a wafer by using a vacuum processing apparatus such as a vapor deposition apparatus, a sputtering apparatus, or an etching apparatus having a processing means inside and outside a vacuum chamber. Or etching the wafer surface. At this time, it is required to maintain high cleanliness inside the vacuum chamber in which the above treatment is performed. Therefore, as a vacuum pump provided in such a vacuum processing apparatus, a cryopump for condensing and capturing the gas in the vacuum chamber on the cooled metallic adsorption surface is often used.
【０００３】上記クライオポンプを備えた真空処理装置
は、例えば以下のようにして駆動させる。先ず、真空処
理装置の真空槽内に処理を行うウエハを収納した後、ロ
ータリーポンプのような粗引き用のポンプを用いて真空
槽内を予備排気する。次に、真空槽の内部と連通するポ
ンプ室内に設けられたクライオポンプの吸着面を冷却
し、真空槽内に残留する気体を当該吸着面に凝縮捕捉す
る。この際、先ず水蒸気が捕捉され、次いで蒸気圧の低
い気体分子から順に捕捉される。これによって真空槽の
内部圧力をウエハ表面の処理に適する所定値にまで低下
させた後、当該真空槽内においてウエハ表面の処理を行
う。次いで、この処理が終了した後、クライオポンプの
吸着面の温度を昇温させることによって、当該吸着面か
ら真空槽内に気体を放出させる。その後、真空槽内に外
部の気体を導入して当該真空槽内を大気圧に戻し、次い
で処理を行ったウエハを真空槽内から取り出す。A vacuum processing apparatus equipped with the above cryopump is driven, for example, as follows. First, after the wafer to be processed is stored in the vacuum chamber of the vacuum processing apparatus, the inside of the vacuum chamber is pre-evacuated using a roughing pump such as a rotary pump. Next, the adsorption surface of the cryopump provided in the pump chamber communicating with the inside of the vacuum chamber is cooled, and the gas remaining in the vacuum chamber is condensed and captured by the adsorption surface. At this time, water vapor is first captured, and then gas molecules having a low vapor pressure are sequentially captured. Thereby, the internal pressure of the vacuum chamber is lowered to a predetermined value suitable for processing the wafer surface, and then the wafer surface is processed in the vacuum chamber. Then, after this process is completed, the temperature of the adsorption surface of the cryopump is raised to discharge the gas from the adsorption surface into the vacuum chamber. Then, an external gas is introduced into the vacuum chamber to return the inside of the vacuum chamber to atmospheric pressure, and then the processed wafer is taken out from the vacuum chamber.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記真空処理
装置の駆動方法では、ウエハの処理が終了した後には、
先ず真空状態の真空槽内に上記クライオポンプの吸着面
から気体が放出されるため、ウエハの処理表面に吸着面
から放出された気体が飛び込み易い。ところが、この気
体の中には水蒸気も含まれており、この水蒸気には水分
子以外にも吸着面に付着していた汚染物質やその他の物
質が吸着されている場合がある。したがって、このよう
な水蒸気がウエハの処理表面に飛び込むと、この処理表
面には水蒸気と共に上記汚染物質が捕捉されてしまう。
そして、このような汚染物質を吸着させた水蒸気は処理
表面の膜中に浸透して目視検査で確認できるような染み
状の汚れを残す場合もあり、例えば上記処理によってウ
エハの表面に光学的な膜を成膜した場合には、この染み
が歩留り低下の一因になる。However, in the above method of driving the vacuum processing apparatus, after the wafer processing is completed,
First, since the gas is released from the adsorption surface of the cryopump into the vacuum chamber in a vacuum state, the gas released from the adsorption surface easily enters the processing surface of the wafer. However, this gas also contains water vapor, and in addition to water molecules, the water vapor may adsorb pollutants or other substances attached to the adsorption surface. Therefore, when such water vapor enters the processed surface of the wafer, the contaminants are trapped on the processed surface together with the water vapor.
Then, the water vapor that has adsorbed such contaminants may penetrate into the film on the treated surface and leave stain-like stains that can be confirmed by visual inspection. When a film is formed, this stain contributes to a decrease in yield.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明の真空処
理装置の駆動方法では、真空槽内の気体を排除するクラ
イオポンプを備えた真空処理装置の駆動方法であって、
クライオポンプの吸着面に気体を凝縮捕捉することによ
って真空状態が保たれた真空槽内において処理基材の処
理が終了した後、当該真空槽内に真空処理装置の外部の
気体を導入し、次いで上記吸着面の温度を昇温させるこ
とによって当該吸着面の凝縮捕捉状態を解放することを
上記課題を解決するための手段としている。Therefore, a method of driving a vacuum processing apparatus according to the present invention is a method of driving a vacuum processing apparatus equipped with a cryopump for eliminating gas in a vacuum chamber,
After the processing of the processing substrate is completed in the vacuum chamber where the vacuum state is maintained by condensing and capturing the gas on the adsorption surface of the cryopump, the gas outside the vacuum processing apparatus is introduced into the vacuum chamber, and then Releasing the condensed and trapped state of the adsorption surface by raising the temperature of the adsorption surface is a means for solving the above problems.
【０００６】上記駆動方法では、真空状態に保たれた真
空槽内に外部から気体が導入された後、クライオポンプ
の吸着面から気体が放出されることから、当該吸着面に
凝縮捕捉された気体は外部から導入された気体中に放出
される。このため、真空槽の外部から導入された気体に
阻まれて、吸着面から放出された気体が真空槽内に収納
されたウエハの表面に達し難くなる。In the above driving method, after the gas is introduced from the outside into the vacuum chamber kept in the vacuum state, the gas is released from the adsorption surface of the cryopump, so that the gas condensed and trapped on the adsorption surface is discharged. Is released into the gas introduced from the outside. Therefore, the gas introduced from the outside of the vacuum chamber prevents the gas released from the adsorption surface from reaching the surface of the wafer housed in the vacuum chamber.
【０００７】[0007]
【発明の実施の形態】以下、本発明の真空処理装置の駆
動方法の実施形態を図１（１）〜（４）に基づいて説明
する。なお、この図に示す真空処理装置１は、例えば半
導体装置の製造工程において成膜装置やエッチング装置
として用いられる真空処理装置の一例であり、本発明の
駆動方法に用いる装置はここで示す装置に限定されるも
のではなく、クライオポンプを備えた真空処理装置の駆
動方法に広く適用可能である。以下、上記真空処理装置
１の構成から順に実施形態を説明する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a driving method for a vacuum processing apparatus according to the present invention will be described below with reference to FIGS. 1 (1) to 1 (4). The vacuum processing apparatus 1 shown in this figure is an example of a vacuum processing apparatus used as, for example, a film forming apparatus or an etching apparatus in a semiconductor device manufacturing process, and the apparatus used in the driving method of the present invention is the same as the apparatus shown here. The present invention is not limited to the above, and can be widely applied to a driving method of a vacuum processing apparatus equipped with a cryopump. Hereinafter, embodiments will be described in order from the configuration of the vacuum processing apparatus 1.
【０００８】この真空処理装置１は、内部で成膜または
エッチング等の処理が行われる真空槽１０と、この真空
槽１０内の気体を排除するクライオポンプ１１とその他
の粗引きポンプ１２とを備えたものである。上記真空槽
１０には、リーク弁１３が接続されている。また、真空
槽１０の内部や外部には、ここでは図示しない処理手段
が配置されている。そして、上記クライオポンプ１１
は、例えば常温から２０Ｋ（ケルビン）以下にまで冷却
可能な吸着面１１ａを有するものであり、この吸着面１
１ａは真空槽１０の内部と連通するポンプ室１４の内部
に配置されている。このクライオポンプ１１は、例えば
吸着面１１ａで覆われた内部に液体ヘリウムや液体窒素
を循環させることによって、この吸着面１１ａを冷却す
るように構成されている。また、粗引きポンプ１２は、
真空槽１０またはポンプ室１４に接続されるもので、例
えばロータリーポンプ，油拡散ポンプまたはターボポン
プのようなクライオポンプ以外の真空ポンプやこれらの
真空ポンプを組み合わせたものを用いることとする。The vacuum processing apparatus 1 is provided with a vacuum tank 10 in which processing such as film formation or etching is performed, a cryopump 11 for eliminating gas in the vacuum tank 10, and another roughing pump 12. It is a thing. A leak valve 13 is connected to the vacuum chamber 10. In addition, a processing unit (not shown) is arranged inside or outside the vacuum chamber 10. Then, the cryopump 11
Has an adsorption surface 11a that can be cooled, for example, from room temperature to 20 K (Kelvin) or less.
1 a is arranged inside a pump chamber 14 that communicates with the inside of the vacuum chamber 10. The cryopump 11 is configured to cool the adsorption surface 11a, for example, by circulating liquid helium or liquid nitrogen inside the adsorption surface 11a. Further, the roughing pump 12 is
A vacuum pump other than a cryopump such as a rotary pump, an oil diffusion pump, or a turbo pump, which is connected to the vacuum tank 10 or the pump chamber 14, or a combination of these vacuum pumps is used.
【０００９】上記のように構成された真空処理装置１を
駆動させる場合には、以下のように行う。先ず、図１
（１）に示す工程では、大気圧に保たれた真空槽１０の
内部に、処理基材として例えば成膜処理を施すウエハＷ
を収納する。次に、粗引きポンプ１２を用いて真空槽１
０内の気体Ａを外部に排出させ、粗引きポンプ１２の油
分が蒸発して真空槽１０内を汚染しない程度に真空槽１
０内を予備排気しておく。When the vacuum processing apparatus 1 constructed as described above is driven, it is carried out as follows. First, Fig. 1
In the step shown in (1), a wafer W to be subjected to, for example, a film forming process as a processing substrate is provided inside the vacuum chamber 10 kept at atmospheric pressure.
To store. Next, using the roughing pump 12, the vacuum chamber 1
The gas A in 0 is discharged to the outside, and the oil in the roughing pump 12 evaporates so that the inside of the vacuum tank 10 is not contaminated.
The inside of 0 is pre-evacuated.
【００１０】その後、図１（２）に示す工程では、クラ
イオポンプ１１の吸着面１１ａを冷却して真空槽１０内
に残留する気体Ａを吸着面１１ａに凝縮捕捉させる。こ
こでは、ウエハＷ表面の処理に必要とされる真空状態に
まで真空槽１０の内部圧力を低下させるのに充分な温度
にまで吸着面１１ａを冷却する。これによって、先ず水
蒸気が吸着面１１ａに捕捉され、次いで蒸気圧の低い順
に気体分子が吸着面１１ａに捕捉される。以上によっ
て、真空槽１０の内部圧力を所定値にまで低下させた
後、次の工程では、この真空槽１０内において例えばウ
エハＷの表面に膜を形成するような処理を施す。以上ま
での工程は従来と同様に行われ、以下の工程からが本発
明に特徴的な工程になる。Thereafter, in the step shown in FIG. 1B, the adsorption surface 11a of the cryopump 11 is cooled so that the gas A remaining in the vacuum chamber 10 is condensed and captured by the adsorption surface 11a. Here, the suction surface 11a is cooled to a temperature sufficient to reduce the internal pressure of the vacuum chamber 10 to the vacuum state required for processing the surface of the wafer W. As a result, first, the water vapor is captured on the adsorption surface 11a, and then the gas molecules are captured on the adsorption surface 11a in order of increasing vapor pressure. As described above, after the internal pressure of the vacuum chamber 10 is reduced to a predetermined value, in the next step, a process of forming a film on the surface of the wafer W in the vacuum chamber 10 is performed. The steps up to this point are performed in the same manner as in the conventional case, and the following steps are the steps characteristic of the present invention.
【００１１】すなわち、図１（３）に示す工程では、上
記のようにして真空槽１０内におけるウエハ表面の処理
が終了した後、真空状態に保たれた真空槽１０に設けら
れたリーク弁１３を開いてこの真空槽１０の内部に当該
真空処理装置１の外部の気体（以下、外気と記す）Ｂを
導入する。この際、真空槽１０の内部圧力が大気圧と同
程度に回復するまで外気Ｂを導入する。導入する外気Ｂ
としては、大気または大気中に汚染物質が存在する場合
には清浄な空気や必要に応じて窒素ガスや乾燥窒素ガス
または加熱した乾燥窒素ガスを用いる。That is, in the step shown in FIG. 1 (3), after the processing of the wafer surface in the vacuum chamber 10 is completed as described above, the leak valve 13 provided in the vacuum chamber 10 kept in a vacuum state. And a gas (hereinafter, referred to as outside air) B outside the vacuum processing apparatus 1 is introduced into the vacuum chamber 10. At this time, the outside air B is introduced until the internal pressure of the vacuum chamber 10 is restored to the same level as the atmospheric pressure. Outside air to be introduced B
As the air, when air or a pollutant is present in the air, clean air or nitrogen gas or dry nitrogen gas or heated dry nitrogen gas is used as necessary.
【００１２】次に、図１（４）に示す工程では、上記図
１（３）を用いて説明した工程で真空槽１０の内部圧力
が上記のように回復した直後に、所定温度にまで冷却さ
れた吸着面１１ａの温度を常温にまで昇温させる。これ
によって、この吸着面１１ａに凝縮捕捉されていた気体
Ａを真空槽１０内に放出させる。そして、吸着面１１ａ
の温度が常温に達しかつ真空槽１０の内部圧力が大気圧
にまで完全に回復した後に、真空槽１０内で処理を行っ
たウエハＷをこの真空槽１０内から取り出す。Next, in the step shown in FIG. 1 (4), immediately after the internal pressure of the vacuum chamber 10 is recovered as described above in the step described with reference to FIG. 1 (3), it is cooled to a predetermined temperature. The temperature of the adsorbed surface 11a is raised to room temperature. As a result, the gas A condensed and trapped on the adsorption surface 11a is released into the vacuum chamber 10. And the suction surface 11a
After the temperature reaches the normal temperature and the internal pressure of the vacuum chamber 10 is completely restored to the atmospheric pressure, the wafer W processed in the vacuum chamber 10 is taken out from the vacuum chamber 10.
【００１３】上記真空処理装置の駆動方法によれば、真
空状態に保たれた真空槽１０内に外気Ｂが導入された
後、クライオポンプ１１の吸着面１１ａから気体Ａが放
出されることから、当該吸着面１１ａに凝縮捕捉された
気体Ａは外部から導入された外気Ｂ中に放出される。こ
のため、外気Ｂに阻まれて、吸着面１１ａから放出され
た気体Ａが真空槽１０内に収納されたウエハＷの表面に
達し難くなっている。また、クライオポンプ１１の吸着
面１１ａから気体を放出する前に、外気Ｂを導入するこ
とによって真空槽１０の内部圧力が上昇するため、吸着
面１１ａから気体Ａが放出され難くなっている。According to the driving method of the vacuum processing apparatus described above, after the outside air B is introduced into the vacuum chamber 10 kept in a vacuum state, the gas A is released from the adsorption surface 11a of the cryopump 11, The gas A condensed and trapped on the adsorption surface 11a is released into the outside air B introduced from the outside. Therefore, it is difficult for the gas A released from the suction surface 11a to reach the surface of the wafer W housed in the vacuum chamber 10 by being blocked by the outside air B. Further, before the gas is released from the adsorption surface 11a of the cryopump 11, the internal pressure of the vacuum chamber 10 rises by introducing the outside air B, so that the gas A is less likely to be released from the adsorption surface 11a.
【００１４】以上のことから、上記吸着面１１ａから放
出される気体Ａのうちの水蒸気及びこれに吸着された汚
染物質によって、ウエハＷの表面が汚染されることが防
止される。したがって、上記のようにしてこの真空処理
装置を駆動させることによってウエハＷの表面に成膜処
理を行った場合には、成膜表面の清浄状態が確保され
る。そして、膜中に水蒸気と共に汚染物質が染み込むこ
とが防止され、ウエハＷの表面に光学的な膜を成膜した
場合には、染みの形成による歩留りの低下を防止するこ
とができる。From the above, the surface of the wafer W is prevented from being contaminated by the water vapor of the gas A released from the adsorption surface 11a and the contaminants adsorbed by the water vapor. Therefore, when the film forming process is performed on the surface of the wafer W by driving the vacuum processing apparatus as described above, the clean state of the film forming surface is secured. In addition, it is possible to prevent contaminants from permeating into the film together with water vapor, and when an optical film is formed on the surface of the wafer W, it is possible to prevent a decrease in yield due to the formation of the stain.
【００１５】尚、上記駆動方法では、真空槽１０の内部
圧力を外気Ｂの導入によってある程度上昇させた後にク
ライオポンプ１１の吸着面１１ａから気体Ａを放出させ
るため、真空槽１０の内部圧力が高圧になる危険性があ
る。このため、真空槽１０に安全弁を設けて真空槽１０
の内部圧力が大気圧より上昇しないようにする。さら
に、上記駆動方法では、吸着面１１ａの温度を常温にま
で昇温させても、当該吸着面１１ａに凝縮捕捉された気
体Ａが吸着面１１ａから放出されずに残留する量が増加
することが考えられる。このため、真空槽１０内からウ
エハＷを取り出した後、吸着面１１ａに凝縮捕捉された
気体Ａの残留物を除去する工程を必要に応じて入念に行
うようにする。In the driving method, the internal pressure of the vacuum chamber 10 is high because the internal pressure of the vacuum chamber 10 is raised to some extent by the introduction of the outside air B and then the gas A is released from the adsorption surface 11a of the cryopump 11. There is a risk of becoming. Therefore, a safety valve is provided in the vacuum chamber 10
Make sure the internal pressure of does not rise above atmospheric pressure. Further, in the above driving method, even if the temperature of the adsorption surface 11a is raised to room temperature, the amount of the gas A condensed and captured by the adsorption surface 11a without being released from the adsorption surface 11a may increase. Conceivable. Therefore, after taking out the wafer W from the vacuum chamber 10, the step of removing the residue of the gas A condensed and trapped on the adsorption surface 11a is carefully performed as necessary.
【００１６】[0016]
【発明の効果】以上説明したように、本発明の真空処理
装置の駆動方法によれば、真空状態に保たれた真空槽内
において処理基材の処理が終了した後、先ず真空状態の
真空槽内に外気を導入し、次にクライオポンプの吸着面
に凝縮捕捉した気体を放出させることによって、上記処
理基材の表面に上記吸着面から放出された気体が達する
ことを防止できる。このため、上記気体として放出され
る水蒸気及びこの水蒸気に吸着された物質による処理基
材表面の汚染を防止することが可能になる。したがっ
て、例えば半導体装置の製造工程においては、成膜装置
やエッチング装置のような真空処理装置を用いたウエハ
表面の処理において、処理表面の汚染を防止して歩留り
の向上を図ることが可能になる。As described above, according to the driving method of the vacuum processing apparatus of the present invention, after the processing of the substrate to be processed is completed in the vacuum tank kept in the vacuum state, the vacuum tank in the vacuum state is first set. It is possible to prevent the gas released from the adsorption surface from reaching the surface of the treated substrate by introducing the outside air into the inside and then releasing the gas condensed and trapped on the adsorption surface of the cryopump. Therefore, it becomes possible to prevent the surface of the treated substrate from being contaminated by the steam released as the gas and the substance adsorbed by the steam. Therefore, for example, in a semiconductor device manufacturing process, in processing a wafer surface using a vacuum processing apparatus such as a film forming apparatus or an etching apparatus, it is possible to prevent contamination of the processing surface and improve yield. .
【図１】実施形態を説明するための図である。FIG. 1 is a diagram for explaining an embodiment.
１ 真空処理装置 １０ 真空槽 １１ クライオ
ポンプ １１ａ 吸着面 Ａ 気体 Ｂ外気 Ｗ ウエハ
（処理基材）1 Vacuum Processing Device 10 Vacuum Tank 11 Cryopump 11a Adsorption Surface A Gas B Outside Air W Wafer (Processing Base Material)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/285 Ｈ０１Ｌ 21/285 Ｓ Ｃ 21/3065 21/31 Ｄ 21/31 21/302 Ａ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication location H01L 21/285 H01L 21/285 SC 21/3065 21/31 D 21/31 21/302 A
Claims (1)
プを備えた真空処理装置の駆動方法であって、 クライオポンプの吸着面を冷却することによって処理基
材が収納された真空槽内の気体を当該吸着面に凝縮捕捉
し、当該真空槽の内部を真空状態にする工程と、 真空状態に保たれた前記真空槽の内部で、前記処理基材
の処理を行う工程と、 前記処理基材の処理が終了した後、真空状態に保たれた
前記真空槽内に真空処理装置の外部の気体を導入する工
程と、 冷却された前記吸着面の温度を昇温させることによって
当該吸着面の凝縮捕捉状態を解放し、前記外部の気体が
導入された前記真空槽内に当該吸着面から気体を放出す
る第工程とを行うことを特徴とする真空処理装置の駆動
方法。1. A method for driving a vacuum processing apparatus equipped with a cryopump for removing gas in a vacuum chamber, comprising cooling a suction surface of the cryopump to store gas in the vacuum chamber in which a processing substrate is stored. A process of condensing and trapping on the adsorption surface to bring the inside of the vacuum chamber into a vacuum state; a process of treating the treatment substrate inside the vacuum chamber kept in a vacuum state; After completion of the treatment, the step of introducing a gas outside the vacuum processing apparatus into the vacuum chamber kept in a vacuum state, and the temperature of the cooled adsorption surface is raised to condense the adsorption surface. And a second step of releasing the trapped state and releasing the gas from the adsorption surface into the vacuum chamber into which the external gas is introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5729896A JPH09250454A (en) | 1996-03-14 | 1996-03-14 | Driving method of vacuum treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5729896A JPH09250454A (en) | 1996-03-14 | 1996-03-14 | Driving method of vacuum treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09250454A true JPH09250454A (en) | 1997-09-22 |
Family
ID=13051656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5729896A Pending JPH09250454A (en) | 1996-03-14 | 1996-03-14 | Driving method of vacuum treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09250454A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102588247A (en) * | 2011-01-17 | 2012-07-18 | 住友重机械工业株式会社 | Cryopump and vacuum valve device |
| WO2013145640A1 (en) * | 2012-03-27 | 2013-10-03 | パナソニック株式会社 | Method for evacuating vacuum chamber, vacuum device, method for forming organic film, method for manufacturing organic el element, organic el display panel, organic el display device, organic el light emitting device, and method for detecting impurities |
-
1996
- 1996-03-14 JP JP5729896A patent/JPH09250454A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102588247A (en) * | 2011-01-17 | 2012-07-18 | 住友重机械工业株式会社 | Cryopump and vacuum valve device |
| JP2012149530A (en) * | 2011-01-17 | 2012-08-09 | Sumitomo Heavy Ind Ltd | Cryopump and vacuum valve device |
| KR101302999B1 (en) * | 2011-01-17 | 2013-09-03 | 스미도모쥬기가이고교 가부시키가이샤 | Cryo pump and vacuum valve apparatus |
| WO2013145640A1 (en) * | 2012-03-27 | 2013-10-03 | パナソニック株式会社 | Method for evacuating vacuum chamber, vacuum device, method for forming organic film, method for manufacturing organic el element, organic el display panel, organic el display device, organic el light emitting device, and method for detecting impurities |
| JPWO2013145640A1 (en) * | 2012-03-27 | 2015-12-10 | 株式会社Ｊｏｌｅｄ | Organic thin film element manufacturing method, organic thin film element manufacturing apparatus, organic film forming method, and organic EL element manufacturing method |
| US9224956B2 (en) | 2012-03-27 | 2015-12-29 | Joled Inc. | Method for manufacturing organic thin-film element, apparatus for manufacturing organic thin-film element, method for forming organic film, and method for manufacturing organic EL element |
| TWI578591B (en) * | 2012-03-27 | 2017-04-11 | Joled Inc | Organic thin film device manufacturing method, organic thin film device manufacturing apparatus, organic film forming method, and organic EL element manufacturing method |
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