JPH09246134A - Method and apparatus for electron beam image drawing and semiconductor device by use of this - Google Patents

Abstract

PROBLEM TO BE SOLVED: To draw an image correcting the position of irradiation by a beam by detecting the vibration of an electron beam image drawing apparatus. SOLUTION: This electron beam image drawing apparatus draws an image reducing the deviation of the position of irradiatio by an electron beam caused by the mechanical vibration of this apparatus. A signal detected by a vibrometer 20 is separated into each vibration frequency component in a vibration frequency separating circuit 22. Next, in a correction quantity calculating device 23, a correction quantity for the position of irradiation by the beam is calculated, and moreover a deflection correcting signal on the basis of the correction quantity is calculated in a signal adjusting part 24. By adding a correction signal for each vibration frequency in an adder 25, adding it to the deflection signal of image drawing data 18 and supplying it to a deflector 10, a mechanical vibration is detected and the position of irradiation by the electron beam is corrected in real time. Consequently, it becomes possible to reduce the deviation of the position of the electron beam by the mechanical vibration of the electron beam image drawing apparatus, and to draw an image with high precision.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus, and more particularly to an electron beam drawing method for detecting a vibration of the electron beam drawing apparatus and correcting an irradiation position of the electron beam to perform drawing with high accuracy.

[0002]

2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has improved, fine processing dimensions have been required. The electron beam drawing apparatus draws a desired pattern on a sample by converging an electron beam emitted from an electron gun with an electron lens and deflecting it with a deflector. At this time, when the stage for moving the sample or the loader for supplying the sample operates and the electron optical lens barrel vibrates, the positions of the electron gun, the electron lens, the deflector, the sample, etc. installed inside the electron optical lens barrel are changed. Due to the relative displacement, the position of the electron beam is displaced on the sample, and the drawing accuracy is reduced.

In order to suppress the vibration of the electron beam drawing apparatus, for example, in Japanese Utility Model Laid-Open No. 1-87533, the structure of the sample chamber lid is a rib structure to increase the rigidity.

Further, in Japanese Unexamined Patent Publication No. 2-189916, there is a method of correcting the stage position measurement result according to the beam deviation angle in order to reduce the influence of the tilting vibration of the electron beam drawing apparatus on the drawing accuracy. Proposed.

[0005]

Although efforts have been made in the past to improve the rigidity of the structure of an electron beam drawing apparatus, the size of the apparatus determined by the sample size, material characteristics applicable as a structural member, assembly and maintenance. It is considered that it is very difficult to further improve the rigidity because of the easiness and the weight limitation of the entire device. In the future, as the drawing accuracy further improves, it is difficult to realize the drawing accuracy only by increasing the rigidity of the structure. Therefore, it is effective to reduce the influence of mechanical vibration that cannot be reduced by the high-rigidity structure by correcting the deflection of the electron beam.

Further, when a mechanism such as a stage or a loader operates, the electron optical lens barrel may be excited at a plurality of natural frequencies as well as the primary natural frequency. In this case, if the deflection of the irradiation position of the beam is corrected for only one frequency, the positional deviation of the beam due to other frequencies cannot be corrected. Further, when not only the natural vibration of the device but also the vibration of the turbo molecular pump or the like is transmitted to the electron optical lens barrel, the electron optical lens barrel vibrates at a specific frequency, and the same problem occurs.

For example, a device having a processing precision of 0.3 μm requires 0.1 μm for the alignment precision. Even if the beam is displaced by about 0.03 μm due to mechanical vibration, it has little effect on the alignment accuracy. However, in the future era of processing precision of 0.1 micron level, 0.03 micron is required for the alignment precision. In this case, the beam vibration causes all the error in the alignment accuracy, and it is necessary to greatly reduce the beam vibration to, for example, 0.01 μm or less. In this region, not only the vibration of low natural frequency but also the influence on the beam vibration appears, so that the correction of only one frequency component becomes insufficient.

[0008]

The vibration of the electron beam drawing apparatus is complicated, and even if this is directly fed back to the deflector, the correction effect is small. However, if a specific frequency component such as natural frequency is separated and extracted from the vibration waveform,
It was found that there is a correlation between the vibration of the lens barrel and the fluctuation of the beam position. In order to perform highly accurate correction, it is necessary to optimally adjust the amplitude and phase at each of a plurality of frequencies. Further, if the specific frequency component can be linearly separated in the vibration waveform of the original lens barrel, linear addition can be performed even after adjusting the amplitude and phase of each frequency component.

This correction method is performed in the following procedure. A vibration detection signal is obtained from a vibrometer attached to the electron optical lens barrel, and the vibration detection signal is supplied to the correction signal generation device. In the correction signal generation device, first, a plurality of vibration frequency components having large vibration amplitudes are extracted and supplied to the correction amount calculation device. Next, the correction amount calculation circuit calculates the position deviation amount of the electron beam for each frequency and determines the correction amount for correcting this position deviation. Further, the frequency and the position deviation amount of the electron beam are supplied to the signal adjusting unit, and the irradiation position correction amount of the electron beam at each frequency is converted into a correction signal to the deflector, and the phase and magnitude of the correction signal are calculated. Make adjustments. By supplying this correction signal to the deflector, drawing can be performed in a state in which the influence of a plurality of specific frequency components is removed.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION In an electron beam drawing apparatus for drawing a fine pattern, mechanical vibration is one of the factors that lower the drawing accuracy. When the vibration is transmitted to the electron beam writer, the structure vibrates due to its own vibrational characteristics.
There is a correlation between the vibration of the electron beam at this time and the vibration mode of the electron beam drawing apparatus. Therefore, if the specific frequency component can be linearly separated in the vibration waveform of the lens barrel, linear addition can be performed even after adjusting the amplitude and phase of each frequency component. The present invention detects a vibration of an electron beam drawing apparatus, extracts a plurality of frequency components having large vibration amplitudes, supplies the sum of correction signals calculated for each frequency component to a deflector, and irradiates a beam with a beam. Is an electron beam drawing method for performing drawing by correcting the deflection.

(Embodiment 1) FIG. 1 is a diagram showing a first embodiment of the present invention.

The electron beam 8 emitted from the electron gun 7 in the electron optical lens barrel 6 is converged by the electron lens 9 and is deflected by the deflector 10 to irradiate the sample 4.

A stage 5 on which a sample 4 is mounted is housed inside the sample chamber 3, and the stage 5 is driven by a stage drive system 11. The electron optical lens barrel 6 is installed on the upper surface of the sample chamber 3. Sample chamber 3 and electron optical lens barrel 6
The loader 12 and the loader 12 are installed on the surface plate 1 having the vibration isolation mechanism 2.

A loader 12 for storing a sample under vacuum is connected to the sample chamber 3 via a valve 15. The interiors of the electron optical lens barrel 6 and the sample chamber 3 are evacuated by the pump 16 through the valve 13 and kept in vacuum. The loader 12 is also evacuated by the pump 17 through the valve 14 and is kept in vacuum.

The vibrometer 20 is attached to the electron optical lens barrel 6,
The vibration of the electron optical lens barrel 6 is always detected. The vibrometer 20 may be either an accelerometer or a displacement meter. The accelerometer includes a piezoelectric accelerometer, an electrodynamic accelerometer, a strain gage accelerometer, a servo accelerometer, and the like, and the displacement gage includes a capacitance displacement gage, a laser displacement gage, and the like. When using an accelerometer, a displacement signal is obtained by integrating the acceleration signal twice.

The correction signal generating device 26 includes an amplifier 21, a frequency separating device 22, a correction amount calculating device 23, and a signal adjusting section 2.
4 and an adder 25. The amplifier 21 amplifies the output signal of the vibrometer 20 described above, and the frequency separation device 22 extracts only the frequency component having a large vibration amplitude from the vibration detection signal. The correction amount calculation device 23 calculates the deviation amount of the beam irradiation position in each frequency component, and determines the correction amount for correcting the beam position deviation. Since the irradiation position of the electron beam and the deflection voltage have a linear relationship, the signal adjusting unit 24 converts the electron beam irradiation position into a deflection voltage corresponding to the correction amount of the beam irradiation position to obtain a correction signal to the deflector 10. The adder 25 adds all the correction signals for each frequency. Further, the drawing data 18 is converted into a deflection signal by the electron beam controller 19. A correction signal is added to the deflection signal of the drawing data and the deflection signal is supplied to the deflector 10. By the above correction method, it is possible to reduce the deviation of the irradiation position of the electron beam due to a plurality of frequency components from one vibration detection signal.

In the present embodiment, the natural vibration mode of the electronic beam drawing apparatus is determined as shown in FIG. First-order natural vibration mode
The vibration (natural frequency f1) is the tilting vibration of the electron optical lens barrel 6 with the joint between the electron optical lens barrel 6 and the sample chamber 3 as the fulcrum as shown in FIG. The secondary natural vibration mode is a mode in which the electron optical lens barrel 6 vibrates in a direction orthogonal to the primary natural vibration mode as shown in FIG. 2 (b). . The third-order natural vibration mode is a mode in which the electron optical lens barrel 6 vibrates in the vertical direction with respect to the sample chamber 3 as shown in FIG. The fourth-order natural vibration mode has a pitching center of rotation in the electron optical lens barrel 6 as shown in FIG. 2D, and the upper lid of the sample chamber 3 is horizontally synchronized with the vibration of the electron optical lens barrel 6. It is a mode that vibrates. The fifth-order natural vibration mode is a mode in which the electron optical lens barrel 6 vibrates in a direction orthogonal to the fourth-order natural vibration mode as shown in FIG. For example, according to the calculation result of the natural frequency of the model electron beam drawing apparatus, f1, f2 = 180 Hz, f
3 = 350 Hz, f4, f5 = 670 Hz. If the structure of the device is symmetrical, f1 = f2, f4
= F5. On the other hand, in the actual measurement, f1 = 150H
z, f2 = 170 Hz, f3 = 200 Hz, f4 = 24
It became 0 Hz and f5 = 260 Hz. f1, f2, f4
There is a slight difference between f5 and f5, but this is because the actual structure is asymmetric. It was also observed that the maximum amplitude of the natural vibration mode of the first order is usually the largest, but the maximum amplitude of the fourth order is larger than the maximum amplitude of the first order when a specific stage is driven.

When the electron beam drawing apparatus vibrates in a plurality of vibration modes, the detection signal of the vibrometer 20 shown in FIG. 2 is a signal in which a plurality of vibration modes are overlapped. However, since the vibration amplitude of the electron optical lens barrel 6 and the vibration amplitude of the electron beam in each vibration mode do not match, the vibration detection signal of the electron optical lens barrel 6 is directly sent to the deflector to transmit the electron beam. The irradiation position of cannot be corrected.

Therefore, in the present embodiment, the frequency separating device constituting the correction signal generating device shown in FIG. 3 extracts a frequency component having a large vibration amplitude from the vibration detection signal. Set band pass filter 2
7 are arranged in parallel and a vibration detection signal is supplied to each band pass filter. The signal passing through each bandpass filter-27 is a vibration component for each frequency. If the vibration detection signal is an acceleration signal, it is integrated twice to obtain a displacement signal,
The displacement for each frequency is supplied to the correction amount calculation device 23.
In order to identify the frequency, the vibration detection signal is converted into FFT (Fast
Fourier Transform) Frequency analysis is performed. Then, the vibration amplitudes are compared for each frequency, and only a plurality of frequency components that particularly affect drawing are extracted. Next, the signal of the extracted frequency component is supplied to the correction amount calculation device 23.

FIG. 4 is a conceptual diagram in which the correction amount calculation device 23 calculates the correction amount of the beam irradiation position for each frequency component. Here, the shift amount of the irradiation position of the electron beam is δ
If i, δi depends on the frequency fi and the vibration amplitude ci, and δi can be expressed as a function P (fi, ci) representing the vibration characteristic.

Here, the irradiation position of the electron beam is measured as follows.

As shown in FIG. 5A, the electron beam 8 is irradiated on the knife edge 28 made of metal or silicon. When the position of the electron beam 8 changes, the amount of transmitted electrons of the transmitted electron detector 28 changes as shown in FIG. 5 (b). By investigating the relationship between the amount of transmitted electrons of the transmitted electron detector 28 and the scanning amount of the electron beam, the change of the beam irradiation position can be measured from the change of the amount of transmitted electrons. FIG.
As shown in (a), the edge of the standard mark 30 is irradiated with the electron beam 8, the backscattered electrons at that time are detected by the backscattered electron detector 31, and the irradiation position of the electron beam is changed from the change in the backscattered electron amount. May be measured.

The correction amount calculation device 23 in the correction signal generation device 26 shown in FIG. 7 will be described again.

A method of identifying the vibration characteristic P (fi, ci) will be described below.

For example, a shaker 34 is attached to the side wall of the sample chamber 3 and the knife edge 2 attached to the upper surface of the stage.
8 is irradiated with the electron beam 8. The sine wave signal having the frequency fi shown in FIG. 7A is supplied to the vibration exciter 33 to vibrate the electron beam drawing apparatus. The vibration amplitude ci of the electron optical lens barrel 6 at each natural frequency fi is the vibration amplitude cix in the X direction shown in FIG. 7B and the vibration amplitude ci in the Y direction shown in FIG. 7C.
It is obtained by measuring y at the same time. The vibration δi of the electron beam at this time is obtained by the knife edge 28 method by independently measuring the vibration δix in the X direction and the vibration δiy in the Y direction with reference to the excitation signal. The vibration detection signal in the X direction at this time is shown in FIG.
The vibration detection signal in the Y direction is shown in FIG. Then, the vibration frequency is set to each natural frequency fi, and the amplitude of the vibration signal is changed, so that the relationship between the displacement amount δi of the electron beam at the frequency fi and the displacement ci of the electron optical lens barrel 6 is changed. You can ask. The vibration characteristic P (fi, ci) can be specified by the above measurement.

The vibration characteristic P can be expressed as, for example, δix = ax cix + bx ciy + Dx (1) δiy = ay cix + by ciy + Dy (2) at a certain frequency fi. Where ax, bx, Dx, ay, by, D
y indicates a constant. Specifying the vibration characteristic P means
That is, to determine this constant. In the case of more complicated vibration, a function using a higher-order polynomial or trigonometric function may be used instead of the above example.

Furthermore, as shown in FIG. 8, the vibration characteristic P (fi, fi,
ci) can be automatically specified. When a vibrational force of a certain frequency is applied to the electron beam drawing apparatus, the vibration characteristic calculation circuit 35 causes the displacement cix and the displacement ci of the electron optical lens barrel 6 to be changed.
The vibration direction and the amplitude ci of the electron optical lens barrel 6 are calculated from y,
Further, the vibration direction and the amplitude δi of the electron beam 8 can be calculated from the vibration signal and the displacement δix and the displacement δiy of the electron beam 8. By using the vibration frequency and the vibration force as parameters in this way, the vibration characteristic P (fi, ci) can be automatically specified.

In the correction amount calculator 23 in the correction signal generator 26 of FIG. 4, if the deviation amount δi of the beam irradiation position is proportional to the vibration amplitude ci of the electron optical lens barrel 6, that is, δ.
If i∝ci, the signal adjusting section 24 may simply set a proportional constant for each frequency. However, when the relationship between the deviation amount δi of the beam irradiation position and the vibration amplitude ci of the electron optical lens barrel 6 is non-linear, a calculation device such as a digital signal processor is used to calculate fi and ci as a function P (fi, c).
It may be input to i) to calculate the displacement amount δi in real time.

In the signal adjustment unit 24 in the correction signal generator 26 of FIG. 4, since the irradiation position of the electron beam and the deflection voltage have a linear relationship, the signal adjustment unit 24 of FIG. A corresponding deflection correction signal is output.

As described above, the deflection correction signals are obtained for each frequency, added by the adder 25 shown in FIG. 1, and supplied to the deflector 10 in addition to the deflection signal of the drawing data. It is possible to reduce the irradiation position deviation of the electron beam due to a plurality of specific frequency components from one vibrometer.

(Embodiment 2) FIG. 9 shows a correction signal generator 2
It is the figure which showed the 2nd Example of the frequency separation device 22 comprised in FIG. As shown in FIG. 9, FFT (Fast Fourier)
Transform) The frequency analysis device 37 is used to spectrally analyze the vibration detection signal to extract a vibration component having a large vibration amplitude. Next, the inverse Fourier transformer 38 is used to inverse Fourier transform the spectrum signal to obtain a vibration waveform in the time domain for each frequency component. In this way, the signal separated into each frequency component from the vibrometer detection signal is supplied to the correction amount calculation device.

(Third Embodiment) FIG. 10 is a diagram showing a second embodiment of the signal adjusting section 24 formed in the correction signal generating apparatus.

When the electron optical lens barrel 6 vibrates in a specific direction at a certain frequency, the vibrating direction of the electron beam 8 does not necessarily coincide with the vibrating direction of the electron optical lens barrel 6 due to the image rotation effect of the electron lens 9. . In such a case, the signal adjusting unit 24 separates the beam irradiation position correction amount signal into two signals according to the rotation angle of the electron lens 9, and the X deflection correction signal 40 and the Y deflection correction signal 40 to the X deflector 46 and Y signal are separated. The Y deflection correction signal 41 to the deflector 47 is converted. Next, the X adder 42 adds the X deflection correction signal 40 of each frequency, and then supplies the X deflection correction signal 40 to the X deflector 46 in addition to the deflection signal of the drawing data 18 of FIG. Y
The adder 43 also adds the Y deflection correction signal 41 of each frequency, and then adds Y to the deflection signal of the drawing data 18 in FIG.
It is supplied to the deflector 47. Even when the vibration direction of the electron optical lens barrel and the vibration direction of the electron beam do not coincide with each other, the magnitude and phase of the correction signal to the X deflector and the correction signal to the Y deflector are appropriately adjusted to adjust the electron beam of the electron beam. The irradiation position can be corrected.

(Embodiment 4) FIG. 12 shows an example of attachment of a vibrometer to an electron beam drawing apparatus.

As shown in FIG. 12A, by mounting the vibrometer 20 at different positions on the electron optical lens barrel 6, the asymmetric vibration of the electron optical lens barrel 6 is measured in real time.
The irradiation position of the electron beam 8 can be corrected according to the rotation angle of the electron lens 9.

As shown in FIG. 12B, in the case where not only the electron optical lens barrel 6 but also the upper surface of the sample chamber 3 vibrates horizontally as in the fourth natural vibration mode, the vibrometer 20 is also installed in the sample chamber 3. By detecting the vibration direction and the vibration amplitude of the mounting sample chamber 3, the displacement X of the electron optical lens barrel 6 with respect to the sample chamber can be known. The displacement of the electron optical lens barrel 6 at this time is shown in FIG. 12 (a), and the horizontal displacement of the upper surface of the sample chamber is shown in FIG. 12 (b). The displacement of the electron optical lens barrel head with respect to the sample chamber is shown in FIG.

As shown in FIG. 13A, the stage 5 is installed on the guide 48, and the vibrometer 20 is attached to the stage 5. When the stage 5 moves along the guide 48, vibration occurs at a constant frequency with the contact rigidity 49 between the stage and the guide as a spring. The vibration of the stage 5 can be detected by the vibrometer 20, and the irradiation position of the beam can be corrected.

As shown in FIG. 13B, for a vibration source other than the drawing apparatus main body such as the loader 12 and the pumps 16 and 17, the vibrometer 20 is directly attached to the electron optical lens barrel 6 rather than being attached thereto. Since a signal with a better S / N is obtained when it is attached to the vibration source, it is also attached to the loader 12, the pumps 16 and 17, and the like.

FIG. 14 shows the correction function comprising the vibrometer and the correction signal generator described in FIG. 1 arranged in parallel with the vibration source. The vibrometer 20 shown in FIG. 13 is attached to each vibration source, and a correction signal generation device 26 is provided for each vibrometer 20 to detect the vibration direction, magnitude, and phase. In the correction signal generation device 26, the signal obtained by adding the X deflection correction signal 40 for each frequency by the adder is set as the Xs deflection correction signal, and the signal obtained by adding the Y deflection correction signal 40 by the adder is set as the Ys deflection correction signal. The Xs deflection correction signals 44 from all the correction signal generation devices 26 are added in the Xt adder 50 to form an Xt deflection correction signal 52.
This Xt deflection correction signal 52 is supplied to the X deflector 46 in addition to the deflection signal of the drawing data 18. Further, the Ys deflection correction signals 45 from all the correction signal generation devices 26 are set to Yt.
The Yt deflection correction signal 53 is also added by the adder 51. This Yt deflection correction signal 53 is supplied to the Y deflector 47 in addition to the deflection signal of the drawing data 18.

By attaching a plurality of vibrometers to the electron beam drawing apparatus and optimally adjusting the correction signal from each vibration source and vibration mode, it is possible to detect the local vibration of the electron beam drawing apparatus and the vibration of the constant vibration source. , The position of the electron beam can be corrected.

(Embodiment 5) FIG. 15 is a diagram showing a fifth embodiment of the present invention. A deflection deflector 54 for correction is attached to the electron optical lens barrel, and a deflection correction signal is supplied to the correction deflector 54 instead of being supplied to the deflector 10, and the irradiation position of the vibrating beam is corrected.

(Embodiment 6) FIG. 16 is a view showing a sixth embodiment of the present invention and shows a manufacturing process of a semiconductor integrated circuit using the electron beam drawing method of the present invention.

16A to 16D are sectional views of the element showing the steps. P well layer 56, P layer 57, field oxide film 58, polycrystalline silicon / silicon oxide film gate 59, P on N-minus silicon substrate 55 by a conventional method.
A high concentration diffusion layer 60, a P high concentration diffusion layer 61, etc. were formed (FIG. 16A). Next, a phosphor glass (PSG) insulating film 62 was deposited, and the insulating film 62 was dry-etched to form a contact hole 63 (FIG. 16B).

Next, the W / TiN electrode wiring 6 is formed by the usual method.
Five materials were adhered, a photosensitizer 66 was applied onto the 5 materials, and the photosensitizer 64 was patterned using the electron beam drawing method of the present invention (FIG. 16C). Then, the W / TiN electrode wiring 65 was formed by dry etching or the like.

Next, an interlayer insulating film 66 was formed, and a hole pattern 67 was formed by a usual method. Hall pattern 67
The inside was filled with a W plug and the Al second wiring 68 was connected (FIG. 16D). The subsequent passivation process used the conventional method.

Although only the main manufacturing steps are described in this embodiment, the same steps as the conventional method are used except that the electron beam drawing method of the present invention is used in the lithography step for forming the W / TiN electrode wiring. . Through the above steps, a fine pattern can be formed, and a CMOS LSI can be manufactured with a high yield. As a result of manufacturing a semiconductor integrated circuit by using the electron beam drawing method of the present invention, it is possible to prevent the occurrence of defective wiring resolution, and the yield of non-defective products is significantly improved.

[0047]

EFFECT OF THE INVENTION It is possible to reduce the positional deviation of the beam due to the mechanical vibration of the electron beam drawing apparatus, and to carry out highly accurate drawing. By using this drawing method, a fine pattern can be drawn with high accuracy even when the stage or the loader is in operation.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram showing a natural vibration mode of an electron beam drawing apparatus.

FIG. 3 is a configuration diagram of a frequency separation device.

FIG. 4 is a diagram showing a function of a correction amount calculation device.

FIG. 5 is a method of measuring a beam irradiation position using a transmission electron detector.

FIG. 6 is a diagram showing a method of measuring a beam irradiation position using a backscattered electron detector.

FIG. 7 is a diagram showing an experimental method for obtaining vibration characteristics.

FIG. 8 is a diagram showing an electron beam drawing apparatus that self-measures vibration characteristics.

FIG. 9 is an example in which an FFT frequency analysis device is applied to a correction signal separation device.

FIG. 10 is a diagram showing a function of a signal adjusting unit.

FIG. 11 is a diagram showing a method of adding a correction signal to a deflection signal of drawing data.

FIG. 12 is a diagram showing an example in which a vibrometer is attached to an electron beam drawing apparatus.

FIG. 13 is a diagram showing an example in which a vibrometer is attached to a vibration source.

FIG. 14 is a diagram showing a signal processing method when using a plurality of vibrometers.

FIG. 15 is an electron beam drawing apparatus in which a deflector for correction is provided inside the electron optical lens barrel.

FIG. 16 is a diagram showing a manufacturing process of the semiconductor integrated circuit.

[Explanation of symbols]

1: surface plate, 2: vibration isolation mechanism, 3: sample chamber, 4: sample, 5:
Stage, 6: electron optical lens barrel, 7: electron gun, 8: electron beam, 9: electron lens, 10: deflector, 11: stage drive motor, 12: loader, 13, 14, 15: valve, 16, 17 : Pump, 18: drawing data, 19: electron beam controller, 20: vibrometer, 21: amplifier, 22:
Frequency separation device, 23: correction amount calculation device, 24: signal adjustment unit, 25: adder, 26: correction signal generation device, 27:
Band pass filter, 28: knife edge, 29: transmission electron detector, 30: standard mark, 31: backscattered electron detector, 32: vibrometer X, 33: vibrometer Y, 34: vibrator,
35: vibration characteristic calculation circuit, 36: FFT frequency analyzer, 37: inverse Fourier transformer, 38: X signal adjustment circuit,
39: Y signal adjusting circuit, 40: X deflection correction signal, 41:
Y deflection correction signal, 42: X adder, 43: Y adder, 4
4: Xs deflection correction signal, 45: Ys deflection correction signal, 4
6: X deflector, 47: Y deflector, 48: guide, 49:
Contact rigidity between table and guide, 50: Xt adder, 5
1: Yt adder, 52: Xt deflection correction signal, 53: Yt
Deflection correction signal, 54: correction deflector, 55: N-minus silicon substrate, 56: P well layer, 57: P layer, 58:
Field oxide film, 59: Polycrystalline silicon / silicon oxide film gate, 60: P high-concentration diffusion layer, 61: N high-concentration diffusion layer, 62: Phosphor glass (PSG) insulating film, 63: Contact hole, 64: Photosensitive Agent, 65: W / TiN electrode wiring, 66: interlayer insulating film, 67: hole pattern, 6
8: Al second wiring.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tokurorou Saito 1-280, Higashikoigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (10)

[Claims] 1. An electron optical barrel having an electron gun, an electron lens for converging an electron beam from the electron gun, and a first deflector for deflecting the electron beam, and a sample is mounted in a sample chamber. Using an electron beam drawing apparatus consisting of a stage and a sample stage fixing the stage mechanism and a loader for supplying the sample, the sample is irradiated with an electron beam emitted from the electron gun to form a predetermined pattern on the sample. In the electron beam drawing method for drawing, a step of detecting a vibration signal of the electron optical lens barrel, a step of separating signals of a plurality of specific frequencies from the detected vibration signal, and an electron beam of each specific frequency A step of specifying a deviation amount and calculating a correction signal to be given to the deflector, a step of adding the calculation result to drawing data and supplying it to the deflector, and a vibration of the electron beam drawing apparatus main body is deflected and corrected to a beam irradiation position. While drawing Electron beam drawing method characterized by comprising a that process. 2. The step of supplying the deflector according to claim 1, wherein a second deflector different from the first deflector is provided and the calculation result is supplied to the second deflector. An electron beam drawing method comprising: 3. An electron beam drawing method, wherein frequency analysis is performed as the separating step according to claim 1. 4. The electron beam writing method according to claim 1, wherein a plurality of vibrometers are used to independently calculate a correction signal for each vibrometer. 5. An electron beam drawing apparatus using the electron beam drawing method according to any one of claims 1 to 4. 6. A semiconductor device using the electron beam drawing method according to any one of claims 1 to 5. 7. An electron optical lens barrel has an electron gun, an electron lens for converging an electron beam from the electron gun, and a first deflector for deflecting the electron beam, and a sample is mounted in a sample chamber. An electron beam drawing apparatus comprising a stage and a sample stage fixing the stage mechanism and a loader for supplying the sample, and means for detecting the vibration of the electron optical lens barrel, and the detected vibration signal. From the plurality of specific frequencies, and means for calculating the correction signal to be given to the deflector by specifying the deviation amount of the electron beam based on the separated signals for each specific frequency. An electron beam drawing apparatus characterized by the above. 8. The first deflector according to claim 7,
An electron beam drawing apparatus comprising a second deflector different from the first deflector. 9. An electron beam drawing apparatus comprising a bandpass filter as the separating means according to claim 7. 10. An electron beam drawing apparatus characterized by comprising an FFT (Fast Fourier Transform) as the separating means according to claim 7.