JPH09235113A - Evaporator for high-melting substance - Google Patents

Evaporator for high-melting substance

Info

Publication number
JPH09235113A
JPH09235113A JP8045992A JP4599296A JPH09235113A JP H09235113 A JPH09235113 A JP H09235113A JP 8045992 A JP8045992 A JP 8045992A JP 4599296 A JP4599296 A JP 4599296A JP H09235113 A JPH09235113 A JP H09235113A
Authority
JP
Japan
Prior art keywords
frequency electrode
electrode
plasma
substance
evaporator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8045992A
Other languages
Japanese (ja)
Other versions
JP3905572B2 (en
Inventor
Tatsuo Shiyouji
多津男 庄司
Tatsufumi Aoi
辰史 青井
Mitsuo Kato
光雄 加藤
Kuniyuki Kajinishi
邦幸 梶西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP04599296A priority Critical patent/JP3905572B2/en
Publication of JPH09235113A publication Critical patent/JPH09235113A/en
Application granted granted Critical
Publication of JP3905572B2 publication Critical patent/JP3905572B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide an evaporator for a high-melting substance designed to readily provide a vapor of the high-melting substance in a large amount in a state of a secured strength of the substance to be an object of evaporation. SOLUTION: This evaporator for a high-melting substance is obtained by arranging plural magnets 12, different in magnetic poles and alternately adjacent in a state thereof surrounding a high-frequency electrode 2 between the high-frequency electrode 2 to be evaporated and a vacuum chamber 1. The evaporator is capable of causing the discharge across the vacuum chamber 1 and the high- frequency electrode 2 with a high-frequency power source 3, generating a plasma, electrically floating the high-frequency electrode 2 from an earth with a blocking capacitor 8, thereby providing the high-frequency electrode 2 with a negative potential with reference to the plasma potential in a DC system, accelerating positive ions in the plasma in the direction of the high-frequency electrode 2 according to the applied negative potential, making the positive ions collide therewith, heating the high-melting metal constituting the electrode 2 and evaporating the high-melting metal. The evaporated metal is taken out of a takeout port 13 and deposited on a film substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は高融点物質を加熱し
て蒸発させる装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for heating and evaporating a high melting point substance.

【0002】[0002]

【従来の技術】図4に従来の高融点金属の蒸発装置を示
す。図示のように、この装置では真空チャンバ1内の高
融点金属の細線15に直流電流源16を用いて電流を流
し、そのジュール発熱により細線を加熱蒸気化する。
2. Description of the Prior Art FIG. 4 shows a conventional refractory metal evaporator. As shown in the figure, in this apparatus, an electric current is applied to a fine wire 15 made of a high melting point metal in the vacuum chamber 1 by using a direct current source 16, and the fine wire is heated and vaporized by Joule heat generation.

【0003】この従来の高融点金属の蒸発装置では、加
熱にジュール加熱を用いているため大きな電流密度が必
要である。その結果、蒸気化対象とする金属の線直径は
サブミリオーダとする事が必要となるため、強度的に線
が切れやすくなると共に、得られる総蒸気量が少ないと
いう欠点があった。
In this conventional vaporizer for refractory metals, a large current density is required because Joule heating is used for heating. As a result, the wire diameter of the metal to be vaporized needs to be on the order of sub-millimeters, so the wire is easily broken in terms of strength, and the total vapor amount obtained is small.

【0004】[0004]

【発明が解決しようとする課題】本発明は、蒸発対象物
質の強度を充分に確保した状態で、多量の高融点物質蒸
気が容易に得られるようにした高融点物質蒸発装置を提
供することを課題としている。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a refractory substance vaporizer in which a large amount of vapor of a refractory substance can be easily obtained while sufficiently securing the strength of the substance to be vaporized. It is an issue.

【0005】[0005]

【課題を解決するための手段】前記課題を解決するた
め、本発明では真空チャンバ内を放電空間としてその内
部に蒸発させるべき高融点物質からなる棒状の高周波電
極を配置するようにし、真空チャンバの外周壁をアース
電極として前記高周波電極との間に放電を発生させるよ
うに構成する。その真空チャンバと高周波電極との間の
空間には高周波電極をとり囲んで交互に隣り合せに磁極
の異なる磁石を配置した構成を採用する。
In order to solve the above-mentioned problems, in the present invention, a rod-shaped high-frequency electrode made of a high melting point substance to be vaporized is arranged inside the vacuum chamber as a discharge space to form a discharge space. The outer peripheral wall is used as a ground electrode to generate a discharge between the high frequency electrode. In the space between the vacuum chamber and the high frequency electrode, a structure is adopted in which magnets having different magnetic poles are alternately and adjacently arranged so as to surround the high frequency electrode.

【0006】上記した構成を持つ本発明の高融点物質蒸
発装置においては、真空チャンバ内を放電空間とし、そ
の真空チャンバ内に、蒸発すべき高融点物質からなる棒
状の高周波電極を配置し、真空チャンバの外周壁をアー
ス電極として放電を発生させる事によりプラズマが生成
される。
In the high-melting-point substance vaporization apparatus of the present invention having the above-described structure, the discharge space is set in the vacuum chamber, and the rod-shaped high-frequency electrode made of the high-melting point substance to be vaporized is placed in the vacuum chamber to form a vacuum. Plasma is generated by generating discharge using the outer peripheral wall of the chamber as a ground electrode.

【0007】高融点物質電極に対し、プラズマの非線型
電流電圧特性による自己バイアス作用によって、また、
外部直流電源を用いてプラズマ電位に対し負電圧が印加
される状態とすると、プラズマ中の正イオンが高融点物
質電極に向かい加速され、衝突する。この衝突の際に正
イオンが電極に与えるエネルギーにより、高融点物質電
極を加熱、蒸発させる事が出来る。
By the self-biasing action of the non-linear current-voltage characteristic of plasma on the refractory material electrode,
When a negative voltage is applied to the plasma potential by using an external DC power supply, positive ions in the plasma are accelerated toward the refractory material electrode and collide. The energy given to the electrode by the positive ions at the time of this collision can heat and evaporate the refractory substance electrode.

【0008】放電電極間隔を充分大きくとれば、生成さ
れるプラズマの状態は高融点物質電極の直径の大小に係
わらないので、高融点物質電極直径を大きくする事が出
来、高融点物質電極に充分な強度を確保しつつ、放電の
大容積化及び蒸発領域の大面積化が達成される。
If the distance between the discharge electrodes is made sufficiently large, the state of the generated plasma does not depend on the diameter of the refractory substance electrode, and therefore the refractory substance electrode diameter can be increased, which is sufficient for the refractory substance electrode. While ensuring sufficient strength, a large discharge volume and a large evaporation area are achieved.

【0009】さらに、アース電極である真空チャンバ外
周壁近傍に磁極の異なる磁石を交互に隣り合せて配置す
る事により、真空チャンバ壁面と平行な磁界を形成させ
る。この磁界は真空チャンバ壁近傍でのみ強く、荷電粒
子は壁近くで反射される。
Further, by arranging magnets having different magnetic poles alternately adjacent to each other in the vicinity of the outer peripheral wall of the vacuum chamber which is the earth electrode, a magnetic field parallel to the wall surface of the vacuum chamber is formed. This magnetic field is strong only near the walls of the vacuum chamber and charged particles are reflected near the walls.

【0010】従って、壁面で消滅する荷電粒子数が減少
し、投入される放電電力に対するプラズマの生成効率を
向上させる事が出来るので、その結果投入される放電電
力に対する高融点物質の蒸発効率を増加させる事が出来
る。
Therefore, the number of charged particles extinguished on the wall surface can be reduced, and the plasma generation efficiency with respect to the supplied discharge power can be improved. As a result, the evaporation efficiency of the high melting point substance with respect to the supplied discharge power is increased. You can

【0011】[0011]

【発明の実施の形態】以下、本発明による装置を図1〜
図3に示した実施の一形態に基づいて具体的に説明す
る。円筒形(内径中40mm程度)のアース電極となる真
空チャンバ1の中央に、高融点物質(カーボン、タング
ステン)の棒状電極2(直径φ2〜3mm程度)を配置
し、高周波電源(例えば周波数13.56MHZ )3を用
いて両電極間に放電を起こし、プラズマ4を発生させ
る。
BEST MODE FOR CARRYING OUT THE INVENTION A device according to the present invention will be described below with reference to FIGS.
A specific description will be given based on the embodiment shown in FIG. A rod-shaped electrode 2 (diameter φ2 to 3 mm) made of a high melting point substance (carbon or tungsten) is arranged in the center of a vacuum chamber 1 which serves as a cylindrical (inner diameter of about 40 mm) ground electrode, and a high frequency power source (for example, frequency 13. cause discharge between two electrodes using 56MH Z) 3, to generate a plasma 4.

【0012】予め真空ポンプ5により排気され放電室6
となる真空チャンバ1内にプラズマ化されるガスがガス
ボンベ7から供給される。高融点金属電極2はブロッキ
ングコンデンサ8を用いてアースから電気的に浮かせる
事により直流的にプラズマ電位に対して負電位となる。
この負電位はプラズマの非線型電流電圧特性による自
己バイアス作用によって誘起されるが、外部直流電圧源
9によっても印加可能である。
The discharge chamber 6 is evacuated in advance by the vacuum pump 5.
The gas to be converted into plasma is supplied from the gas cylinder 7 into the vacuum chamber 1. The refractory metal electrode 2 is made to have a DC negative potential with respect to the plasma potential by electrically floating from the ground using the blocking capacitor 8.
This negative potential is induced by the self-bias action due to the non-linear current-voltage characteristic of plasma, but can also be applied by the external DC voltage source 9.

【0013】与えられた負電位に応じて、プラズマ4中
の正イオン10が高融点電極2の方向へ加速され、衝突
するが、この衝突の際に正イオンが失うエネルギーによ
り高融点金属2が加熱、蒸発される。従って、蒸発量は
外部直流電圧源9により制御される。
According to the applied negative potential, the positive ions 10 in the plasma 4 are accelerated toward the refractory electrode 2 and collide with each other. It is heated and evaporated. Therefore, the evaporation amount is controlled by the external DC voltage source 9.

【0014】ここで、金属の蒸発に伴う電極の消耗に応
じて、直動装置11により高融点金属2が軸方向に導入
される。アース電極である外周壁1近傍には磁極の異な
る磁石12が配置され、プラズマの生成効率、すなわ
ち、蒸発効率を高める役割を果たしている。磁石と磁石
の間には蒸気取り出し口13が設けられており、例えば
フィルム基板14への蒸着に利用される。
Here, the refractory metal 2 is introduced in the axial direction by the linear motion device 11 in accordance with the consumption of the electrode due to the evaporation of the metal. Magnets 12 having different magnetic poles are arranged in the vicinity of the outer peripheral wall 1 which is a ground electrode, and plays a role of enhancing plasma generation efficiency, that is, evaporation efficiency. A vapor outlet 13 is provided between the magnets, and is used for vapor deposition on the film substrate 14, for example.

【0015】以上、本発明を図示した実施の一形態に基
づいて具体的に説明したが、本発明がこれらの実施の形
態に限定されず特許請求の範囲に示す本発明の範囲内
で、その形状、構造に種々の変更を加えてよいことはい
うまでもない。
The present invention has been specifically described above based on the illustrated embodiments, but the present invention is not limited to these embodiments and within the scope of the present invention shown in the claims. It goes without saying that various changes may be made to the shape and structure.

【0016】例えば、上記実施形態では単に高融点金属
を蒸気化する装置について示したが、単なる蒸気化のみ
ならず、反応性を伴う蒸気化も可能である。例えば、カ
ーボンを棒状電極2とした場合、フラーレン(C60,C
70)の製造を行う装置とすることが可能である。
For example, in the above embodiment, an apparatus for simply vaporizing a refractory metal was shown, but not only simple vaporization but also vaporization with reactivity is possible. For example, when carbon is used as the rod-shaped electrode 2, fullerenes (C 60 , C
70 ) It is possible to use the device for manufacturing.

【0017】[0017]

【発明の効果】以上具体的に説明したように、本発明に
よれば、蒸発対象とする金属の強度を充分確保する事が
出来、かつ多量の高融点金属蒸気が容易に得られる装置
が提供される。
As described in detail above, according to the present invention, there is provided an apparatus capable of sufficiently securing the strength of a metal to be evaporated and easily obtaining a large amount of refractory metal vapor. To be done.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の一形態に係る高融点物質蒸発装
置の構成を示す斜視図。
FIG. 1 is a perspective view showing a configuration of a high melting point substance evaporation device according to an embodiment of the present invention.

【図2】図1のA−A線に沿う断面図。FIG. 2 is a sectional view taken along the line AA of FIG. 1;

【図3】図1のB−B線に沿う断面図。FIG. 3 is a sectional view taken along the line BB of FIG. 1;

【図4】従来の高融点物質蒸発装置の構成を示す断面
図。
FIG. 4 is a cross-sectional view showing the configuration of a conventional high melting point substance evaporation device.

【符号の説明】[Explanation of symbols]

1 真空チャンバ 2 高融点金属棒状電極 3 高周波電源 4 プラズマ 5 真空ポンプ 6 放電室 7 ガスボンベ 8 ブロッキングコンデンサ 9 外部直流電圧源 10 正イオン 11 直動装置 12 磁石 13 蒸気取り出し口 14 フィルム基板 17 金属蒸気 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 High melting point metal rod electrode 3 High frequency power supply 4 Plasma 5 Vacuum pump 6 Discharge chamber 7 Gas cylinder 8 Blocking capacitor 9 External DC voltage source 10 Positive ions 11 Direct-acting device 12 Magnet 13 Vapor outlet 14 Film substrate 17 Metal vapor

フロントページの続き (72)発明者 加藤 光雄 広島市西区観音新町四丁目6番22号 三菱 重工業株式会社広島研究所内 (72)発明者 梶西 邦幸 広島市西区観音新町四丁目6番22号 三菱 重工業株式会社広島研究所内Front page continued (72) Inventor Mitsuo Kato 4-6-22 Kannon Shinmachi, Nishi-ku, Hiroshima City Mitsubishi Heavy Industries, Ltd. Hiroshima Research Institute (72) Inventor Kuniyuki Kajinishi 4-22 Kannon-shinmachi, Nishi-ku, Hiroshima City Mitsubishi Heavy Industries Hiroshima Laboratory Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 導電性を有する高融点物質を加熱して蒸
発させる装置において、蒸発させるべき高融点物質から
なる棒状の高周波電極が内部に配置され放電空間を与え
る真空チャンバ及び同チャンバと前記高周波電極との間
の空間に前記高周波電極をとり囲んで交互に隣り合せに
配置された磁極の異る複数個の磁石を有し、前記真空チ
ャンバの外周壁をアース電極としたことを特徴とする高
融点物質蒸発装置。
1. In a device for heating and evaporating a high melting point substance having conductivity, a rod-shaped high frequency electrode made of a high melting point substance to be vaporized is disposed inside to provide a discharge space, a vacuum chamber and the chamber and the high frequency wave. In the space between the electrodes, a plurality of magnets having different magnetic poles, which are alternately arranged so as to surround the high-frequency electrode and are arranged adjacently to each other, are provided, and the outer peripheral wall of the vacuum chamber is used as a ground electrode. High melting point vaporizer.
JP04599296A 1996-03-04 1996-03-04 High melting point material evaporator Expired - Lifetime JP3905572B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04599296A JP3905572B2 (en) 1996-03-04 1996-03-04 High melting point material evaporator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04599296A JP3905572B2 (en) 1996-03-04 1996-03-04 High melting point material evaporator

Publications (2)

Publication Number Publication Date
JPH09235113A true JPH09235113A (en) 1997-09-09
JP3905572B2 JP3905572B2 (en) 2007-04-18

Family

ID=12734634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04599296A Expired - Lifetime JP3905572B2 (en) 1996-03-04 1996-03-04 High melting point material evaporator

Country Status (1)

Country Link
JP (1) JP3905572B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002356316A (en) * 2001-06-01 2002-12-13 Fuji Xerox Co Ltd Apparatus and method for producing carbon structures
JPWO2004039723A1 (en) * 2002-10-30 2006-02-23 富士ゼロックス株式会社 Carbon nanotube manufacturing apparatus and manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117986A (en) * 1975-04-09 1976-10-16 Anelva Corp Sputtering apparatus
JPS5256084A (en) * 1975-09-19 1977-05-09 Anvar Cathodic spattering apparatus
JPS62180069A (en) * 1986-02-05 1987-08-07 Kobe Steel Ltd Method for coating inside surface of pipe
JPH01188669A (en) * 1988-01-20 1989-07-27 Sekiyu Kodan Reactive sputtering device
JPH01255668A (en) * 1988-04-01 1989-10-12 Kobe Steel Ltd Formation of film using coaxial magnetron sputtering device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117986A (en) * 1975-04-09 1976-10-16 Anelva Corp Sputtering apparatus
JPS5256084A (en) * 1975-09-19 1977-05-09 Anvar Cathodic spattering apparatus
JPS62180069A (en) * 1986-02-05 1987-08-07 Kobe Steel Ltd Method for coating inside surface of pipe
JPH01188669A (en) * 1988-01-20 1989-07-27 Sekiyu Kodan Reactive sputtering device
JPH01255668A (en) * 1988-04-01 1989-10-12 Kobe Steel Ltd Formation of film using coaxial magnetron sputtering device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002356316A (en) * 2001-06-01 2002-12-13 Fuji Xerox Co Ltd Apparatus and method for producing carbon structures
JPWO2004039723A1 (en) * 2002-10-30 2006-02-23 富士ゼロックス株式会社 Carbon nanotube manufacturing apparatus and manufacturing method

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