JPH09232820A - Microstrip line - Google Patents
Microstrip lineInfo
- Publication number
- JPH09232820A JPH09232820A JP8039640A JP3964096A JPH09232820A JP H09232820 A JPH09232820 A JP H09232820A JP 8039640 A JP8039640 A JP 8039640A JP 3964096 A JP3964096 A JP 3964096A JP H09232820 A JPH09232820 A JP H09232820A
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- Prior art keywords
- conductor
- line
- microstrip line
- dielectric
- frequency
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はマイクロ波、及びミ
リ波領域におけるモノリシックＩＣに利用されるマイク
ロストリップ線路に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microstrip line used for a monolithic IC in the microwave and millimeter wave region.
【０００２】[0002]
【従来の技術】従来からマイクロストリップ線路は、マ
イクロ波及びミリ波領域で動作するＩＣにおいて、有用
な伝送線路として広く用いられている。一例として、半
絶縁性ＧａＡｓ基板上に形成されたマイクロストリップ
線路を図６に示す。誘電体層２として、室温で絶縁物と
みなすことができる半絶縁性ＧａＡｓ基板を用い、その
上面に例えばＡｕ等から成る導体層を堆積し、写真食刻
技術を用いて前記導体層の内、信号線として使用する第
１の導体１以外の部分をエッチング除去する。前記半絶
縁性ＧａＡｓ基板の下面は、例えば銅板に厚くＡｕメッ
キを施した第２の導体３にダイボンドされる。従来、半
絶縁性ＧａＡｓ基板を用いたマイクロ波及びミリ波領域
のマイクロストリップ線路は、通常上記のような方法で
形成される。第１の導体１の上は通常空気中に晒される
ので、図の参照番号４は空気を示している。2. Description of the Related Art Conventionally, microstrip lines have been widely used as useful transmission lines in ICs operating in the microwave and millimeter wave regions. As an example, FIG. 6 shows a microstrip line formed on a semi-insulating GaAs substrate. As the dielectric layer 2, a semi-insulating GaAs substrate that can be regarded as an insulator at room temperature is used, and a conductor layer made of, for example, Au is deposited on the upper surface of the substrate and one of the conductor layers is formed by photolithography. A portion other than the first conductor 1 used as a signal line is removed by etching. The lower surface of the semi-insulating GaAs substrate is die-bonded to the second conductor 3 which is, for example, a thick copper plate on a copper plate. Conventionally, a microstrip line in the microwave and millimeter wave region using a semi-insulating GaAs substrate is usually formed by the above method. The upper part of the first conductor 1 is normally exposed to the air, so the reference numeral 4 in the figure indicates air.
【０００３】図６に示した横軸ｘは前記第１の導体の幅
方向の距離である。縦軸は第１の導体１を流れる高周波
電流の密度分布を示す。図６に示すようにマイクロスト
リップ線路では、第１の導体の端部に電流が集中し線路
の導体損を大きくする。導体損は信号の減衰を生ずるば
かりでなく、マイクロストリップ線路を用いた共振器に
おいてＱ値を悪化させる。The horizontal axis x shown in FIG. 6 is the distance in the width direction of the first conductor. The vertical axis represents the density distribution of the high frequency current flowing through the first conductor 1. As shown in FIG. 6, in the microstrip line, current concentrates at the end of the first conductor, increasing the conductor loss of the line. The conductor loss not only causes signal attenuation, but also deteriorates the Q value in the resonator using the microstrip line.
【０００４】マイクロストリップ線路は理想的には平行
平板としてとらえられ、電界及び磁界の進行方向成分が
零であるＴＥＭモードで信号を伝搬することができる。
ＴＥＭモードでは、ＤＣから高周波までの全ての周波数
の信号を伝搬することができる。またＴＥＭモードで
は、この様に周波数分散が存在しないことから、信号の
波形歪みを生じないという利点を持っている。しかし、
マイクロストリップ線路は、誘電体層２の上に形成され
る第１の導体１が誘電率の異なる空気４に接しているた
め、前記第１の導体は２種の媒質に接していることにな
り、完全なＴＥＭモードは成立しない。The microstrip line is ideally regarded as a parallel plate and can propagate a signal in a TEM mode in which the components of the electric field and magnetic field in the traveling direction are zero.
In the TEM mode, signals of all frequencies from DC to high frequencies can be propagated. Further, in the TEM mode, since there is no frequency dispersion as described above, there is an advantage that signal waveform distortion does not occur. But,
In the microstrip line, since the first conductor 1 formed on the dielectric layer 2 is in contact with the air 4 having different permittivity, the first conductor is in contact with two kinds of media. , The complete TEM mode is not established.
【０００５】この様にＴＥＭモードからやや外れた伝送
モードは準ＴＥＭモードと呼ばれるが、前記準ＴＥＭモ
ードでは、ＴＥＭに対応するモードの他に高次のモード
が存在する。高次モードの発生状況を図７に示す。図の
横軸は周波数、縦軸は線路を伝わる信号の伝搬定数β
と、その周波数におけるＴＥＭモードの伝搬定数β0 と
の比である。ＴＥＭモードのみであれば、図に水平な破
線で示されるようにβ／β0 は１に等しく周波数分散は
生じないが、準ＴＥＭモードでは、図にｆC1、ｆC2を通
る破線で示されているように高次のモードが立ち上が
り、その結果実線で示すように線路の伝搬特性には周波
数分散を生じ、波形歪みの原因となる。The transmission mode slightly deviated from the TEM mode in this way is called a quasi-TEM mode. In the quasi-TEM mode, there are higher-order modes in addition to the modes corresponding to the TEM. The state of occurrence of the higher mode is shown in FIG. The horizontal axis of the figure is the frequency, and the vertical axis is the propagation constant β of the signal transmitted through the line.
And the propagation constant β 0 of the TEM mode at that frequency. In the TEM mode only, β / β 0 is equal to 1 and no frequency dispersion occurs as shown by the horizontal broken line in the figure, but in the quasi-TEM mode, it is shown by the broken line passing through f C1 and f C2 in the figure. As a result, a higher-order mode rises, resulting in frequency dispersion in the propagation characteristics of the line as shown by the solid line, which causes waveform distortion.
【０００６】[0006]
【発明が解決しようとする課題】上記したように従来の
マイクロストリップ線路では、高次モードの存在により
線路の伝搬特性に周波数分散を生じ、信号波形に歪みが
発生するという問題があった。本発明は上記の問題点を
解決すべくなされたもので、高次モードの発生を抑制
し、従来に比べて高い周波数まで周波数分散の小さいマ
イクロストリップ線路を提供することを目的とする。ま
たコプレーナ形のストリップ線路に対しても、高次のモ
ードを抑制する方法を提供することにより周波数分散を
抑制し、超高周波、超高速ＩＣへのストリップ線路の応
用範囲を拡大しようとするものである。As described above, the conventional microstrip line has a problem in that the presence of the higher-order mode causes frequency dispersion in the propagation characteristic of the line and causes distortion in the signal waveform. The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a microstrip line that suppresses the generation of higher-order modes and has a smaller frequency dispersion up to a higher frequency than ever before. Moreover, even for a coplanar stripline, it is intended to suppress the frequency dispersion by providing a method for suppressing higher-order modes and to expand the range of application of the stripline to ultra high frequency and ultra high speed ICs. is there.
【０００７】[0007]
【課題を解決するための手段】誘電体の上面に配置され
た線状の第１の導体と、この第１の導体に対向し、誘電
体の下面を広く覆うように形成された面状の第２の導体
から成るマイクロストリップ線路において、第１の導体
の下面又は上面、又は前記第２の導体の前記第１の導体
と対向する部分の表面に、信号の伝搬する方向に沿って
縞状の凹凸を設けることにより、第１の導体の高周波に
おける導体損に異方性を生ずるようにして高次モードの
発生を抑制する。A linear first conductor arranged on an upper surface of a dielectric, and a planar conductor facing the first conductor and widely covering a lower surface of the dielectric. In a microstrip line including a second conductor, a striped pattern is formed on a lower surface or an upper surface of the first conductor, or on a surface of a portion of the second conductor facing the first conductor, along a signal propagation direction. By providing the unevenness of (1), anisotropy is generated in the conductor loss of the first conductor at a high frequency, and the generation of higher modes is suppressed.
【０００８】また、誘電体の上面に配置された線状の第
１の導体と、この第１の導体に対向し、誘電体の下面を
広く覆うように形成された面状の第２の導体と、誘電体
の上面において、前記第１の導体の両側に前記第１の導
体と一定の間隔をおいて配置された面状の第３及び第４
の導体から成るコプレーナ形ストリップ線路において、
前記第３又は第４の導体又は前記第２の導体の対向する
表面に多数の突起を設けて高周波における導体損を増加
させることにより、高次モードの発生を抑制する。Further, a linear first conductor arranged on the upper surface of the dielectric and a planar second conductor facing the first conductor and widely covering the lower surface of the dielectric. And planar third and fourth planar conductors arranged on both sides of the first conductor on the upper surface of the dielectric body with a constant distance from the first conductor.
In a coplanar stripline consisting of
Generation of higher-order modes is suppressed by providing a large number of protrusions on the surfaces of the third or fourth conductor or the second conductor that face each other to increase the conductor loss at high frequencies.
【０００９】[0009]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。図１（ａ）は、本発明の第
１の実施の形態に係る半絶縁性ＧａＡｓ基板上のマイク
ロストリップ線路の構造を示す断面図である。ここに第
１の導体５は通常Ａｕ等で構成される。前記半絶縁性Ｇ
ａＡｓを誘電体２とし、前記半絶縁性ＧａＡｓ基板をダ
イボンドするＡｕメッキした金属基板を第２の導体３と
する。誘電体２を介して第２の導体３に対向する第１の
導体５の表面には、図１（ａ）示すように、第１の導体
の信号の伝搬方向に沿って平行に、矩形波断面の縞状の
凹凸を設ける。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1A is a sectional view showing the structure of a microstrip line on a semi-insulating GaAs substrate according to the first embodiment of the present invention. Here, the first conductor 5 is usually made of Au or the like. The semi-insulating G
Let aAs be the dielectric 2, and use the Au-plated metal substrate for die-bonding the semi-insulating GaAs substrate as the second conductor 3. On the surface of the first conductor 5 facing the second conductor 3 via the dielectric 2, as shown in FIG. 1A, a rectangular wave is formed parallel to the signal propagation direction of the first conductor. The stripe-shaped unevenness of the cross section is provided.
【００１０】図２（ａ）は第１の導体５の部分拡大図で
ある。マイクロ波、ミリ波のような高周波領域では、導
体に流れる電流は表皮効果により導体の表面近傍にしか
存在しない。表皮の厚さをδとし、図２（ａ）に示すよ
うに縞状の凹凸の凸部の厚さを２δ、高さをδ以上とす
れば、電流は突部の内部全体に流れることが可能とな
る。また隣接する凹凸形状の凹部の底面にも、δ程度の
厚さで電流が流れるので、縞状の凹凸のない従来の平坦
な構造に比べて、電流密度の低減を図ることができる。FIG. 2A is a partially enlarged view of the first conductor 5. In a high frequency region such as a microwave and a millimeter wave, the current flowing through the conductor exists only near the surface of the conductor due to the skin effect. If the thickness of the skin is δ, and the thickness of the convex portion of the striped unevenness is 2δ and the height is δ or more as shown in FIG. It will be possible. Further, since a current flows through the bottom surface of the adjacent concave and convex concave portions with a thickness of about δ, the current density can be reduced as compared with the conventional flat structure having no striped concave and convex portions.
【００１１】前記矩形波断面の縞状凹凸において凸部の
角の部分に電界が集中し、局所的に電流密度が増大する
ことが考えられるが、図６で述べたように、従来マイク
ロストリップ線路の端部には電流が集中し、第１の導体
の導体損を増大させていることから、本発明の構造では
電流密度の局所的な増大が広く分散され、信号の伝搬方
向に平行に流れる電流に関して導体損を低減する効果が
ある。一方伝搬方向に垂直な電流成分については、電流
は凸部を越えて流れなければならないので、従来の平坦
な構造に比べて導体損が増加する。すなわち、本発明の
第１の導体に設けた縞状の凹凸は、縞に対して垂直な第
１の導体の幅方向に流れる電流を減衰させる効果があ
る。It is conceivable that the electric field is concentrated on the corners of the convex portions in the striped concavo-convex section of the rectangular wave section and the current density is locally increased. However, as described in FIG. 6, the conventional microstrip line is used. Since current concentrates at the end of the first conductor and increases the conductor loss of the first conductor, the local increase in current density is widely dispersed in the structure of the present invention, and flows in parallel to the signal propagation direction. It has the effect of reducing the conductor loss with respect to the current. On the other hand, for the current component perpendicular to the propagation direction, the current must flow over the convex portion, so that the conductor loss increases as compared with the conventional flat structure. That is, the stripe-shaped unevenness provided on the first conductor of the present invention has an effect of attenuating the current flowing in the width direction of the first conductor perpendicular to the stripe.
【００１２】以上のように、第１の実施の形態で説明し
た構造のマイクロストリップ線路では、信号の伝搬方向
に平行に電流が流れるモードに関しては導体損が小さ
く、垂直方向に流れる電流に関しては導体損が大きい。
すなわち、伝搬方向に垂直な電流成分を持つ高次のモー
ドを抑制すると同時に、信号の伝搬方向に平行に電流が
流れるＴＥＭモードに対しては損失を低減することがで
きる。本第１の実施の形態のマイクロストリップ線路で
は、高次モードの発生による周波数分散が抑制され、従
来に比べてより高い周波数領域まで波形歪みの少ない信
号の伝搬が可能となる。さらに伝搬方向に平行な電流成
分については損失が小さくなることから、高周波におい
ても伝送損失の少ない線路を形成することができる。As described above, in the microstrip line having the structure described in the first embodiment, the conductor loss is small in the mode in which the current flows parallel to the signal propagation direction, and the conductor loss in the current flowing in the vertical direction. The loss is large.
That is, it is possible to suppress higher-order modes having a current component perpendicular to the propagation direction, and at the same time, reduce the loss in the TEM mode in which the current flows in parallel to the signal propagation direction. In the microstrip line of the first embodiment, frequency dispersion due to generation of higher-order modes is suppressed, and it becomes possible to propagate a signal with less waveform distortion up to a higher frequency region than in the conventional case. Furthermore, since the loss is small for the current component parallel to the propagation direction, it is possible to form a line with a low transmission loss even at high frequencies.
【００１３】第１の導体としてＡｕを用いるとき、表皮
の厚さδは周波数３０ＧＨｚにおいて約４μｍとなり、
より高周波のミリ波領域でも矩形波断面形状の縞の間隔
は数μｍ程度となるので、通常のリソグラフィ技術を用
いることにより容易に前記矩形波断面の縞を形成するこ
とができる。When Au is used as the first conductor, the skin thickness δ is about 4 μm at a frequency of 30 GHz,
Even in the higher frequency millimeter wave region, the interval between the stripes of the rectangular wave cross section is about several μm, so that the stripes of the rectangular wave cross section can be easily formed by using a normal lithography technique.
【００１４】図２（ｂ）〜（ｄ）に本発明の第１の実施
の形態における第１の導体の断面形状の変形例を示す。
図２（ｂ）では第１の導体の信号の伝搬方向に平行な縞
の断面形状が三角波とされている。図２（ａ）の説明か
ら明らかなように、必ずしも厳密に図２（ａ）の寸法を
持った矩形波の断面形状ではなくても、第１の導体の長
手方向に平行な縞状の凹凸が有れば、高周波電流の導体
損に異方性が生ずる。同様に図２（ｃ）、（ｄ）はそれ
ぞれ断面形状が梯形波及び正弦波の場合を示している。
これらの断面形状から加工精度を勘案して容易に種々の
変形例を類推することができる。図２（ｄ）に示した正
弦波の断面形状では、矩形波の場合に比べて角の部分の
電流集中を一層低減することができるので、ＴＥＭモー
ドの電流損を更に少なくする効果がある。FIGS. 2B to 2D show modified examples of the cross-sectional shape of the first conductor according to the first embodiment of the present invention.
In FIG. 2B, the cross-sectional shape of the stripes parallel to the signal propagation direction of the first conductor is a triangular wave. As is clear from the description of FIG. 2A, even if the cross-sectional shape of the rectangular wave is not exactly the dimension of FIG. 2A, the stripe-shaped unevenness parallel to the longitudinal direction of the first conductor is used. Is present, anisotropy occurs in the conductor loss of the high frequency current. Similarly, FIGS. 2C and 2D show cases where the cross-sectional shapes are a trapezoidal wave and a sine wave, respectively.
Various modifications can be easily inferred from these cross-sectional shapes in consideration of processing accuracy. In the cross-sectional shape of the sine wave shown in FIG. 2D, the current concentration at the corner can be further reduced as compared with the case of the rectangular wave, so that there is an effect of further reducing the current loss in the TEM mode.
【００１５】図１（ａ）に示した構造では、第１の導体
５の下面にのみ凹凸を形成したが、高周波電流は第１の
導体の上面にも存在するので、前記上面にも同様の凹凸
加工を施すことにより（図示されていない）、第１の実
施の形態の効果を高めることができる。図１（ｂ）は第
２の導体６の第１の導体に対向する直下部分に凹凸の断
面形状の縞を設けた第１の実施の形態の変形例である。
ＴＥＭモードでは前記第２の導体にも信号の伝搬方向と
平行に高周波電流が流れるので、マイクロストリップ線
路を図１（ｂ）のように構成することにより、第１の実
施の形態の効果を更に高めることができる。In the structure shown in FIG. 1 (a), the unevenness is formed only on the lower surface of the first conductor 5, but since the high frequency current is present on the upper surface of the first conductor as well, the same applies to the upper surface. The effect of the first embodiment can be enhanced by performing the uneven processing (not shown). FIG. 1B shows a modified example of the first embodiment in which a stripe of a concave-convex cross-sectional shape is provided in a portion directly below the second conductor 6 facing the first conductor.
In the TEM mode, a high-frequency current also flows in the second conductor in parallel with the signal propagation direction. Therefore, by configuring the microstrip line as shown in FIG. 1B, the effect of the first embodiment is further enhanced. Can be increased.
【００１６】この様に半絶縁性ＧａＡｓ基板２の下面に
凹凸形状を形成するには、上面に凹凸を形成するのと同
様、写真食刻技術を前記基板の下面に適用した後、Ａｕ
メッキ等により前記下面メタライズの後ダイボンドすれ
ばよい。なお、図１（ｃ）に示すように、第２の導体６
の上のみに前記凹凸を設ける方法も有効である。As described above, in order to form the uneven shape on the lower surface of the semi-insulating GaAs substrate 2, the photolithography technique is applied to the lower surface of the substrate and then Au is used, similarly to the case where the uneven surface is formed.
The lower surface metallization may be performed by plating and then die-bonded. As shown in FIG. 1C, the second conductor 6
It is also effective to provide the unevenness only on the top.
【００１７】次に図３に基づき本発明の第２の実施の形
態について説明する。図３は本発明の第１の実施の形態
を応用したパッチアンテナの構造の一例を示す鳥瞰図で
ある。図の７は、マイクロストリップ線路の第１の導体
１の終端部の幅を長さλ／２に亘って広げることによ
り、アンテナとして動作する共振器を形成したものであ
る。２は半絶縁性ＧａＡｓ基板から成る誘電体、３は第
２の導体である。前記第２の導体に対向する前記７の下
面には、信号の伝搬方向に沿って平行に凹凸の縞を設け
る。本構造により７に高周波電流の損失の異方性を与え
ることにより、アンテナの特性に偏波依存性を与えるこ
とができる。Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a bird's-eye view showing an example of the structure of the patch antenna to which the first embodiment of the present invention is applied. In FIG. 7, a resonator operating as an antenna is formed by expanding the width of the terminal end of the first conductor 1 of the microstrip line over a length λ / 2. Reference numeral 2 is a dielectric made of a semi-insulating GaAs substrate, and 3 is a second conductor. On the lower surface of the 7 facing the second conductor, uneven stripes are provided in parallel along the signal propagation direction. By imparting anisotropy of high-frequency current loss to 7 with this structure, it is possible to impart polarization dependence to the antenna characteristics.
【００１８】すなわち、縞状の凹凸に平行な電流に対応
する偏波モードについては損失が小さいため、７の下面
が平坦な通常のパッチアンテナに比べてＱ値が高くな
り、アンテナ利得が増大する。一方縞状の凹凸に垂直方
向の電流に対応する偏波モードについては損失が大きい
ため、送受信共に応答が抑制される。その結果、偏波依
存性を有するアンテナを形成することができる。That is, since the loss is small in the polarization mode corresponding to the current parallel to the striped unevenness, the Q value is higher and the antenna gain is increased as compared with a normal patch antenna having a flat bottom surface. . On the other hand, in the polarization mode corresponding to the current in the direction perpendicular to the striped unevenness, the loss is large, so that the response is suppressed in both transmission and reception. As a result, an antenna having polarization dependency can be formed.
【００１９】次に図５に基づき本発明の第３の実施の形
態について説明する。図４は比較のために示した前記第
１の実施の形態におけるマイクロストリップ線路の構造
を示す鳥瞰図である。図５はコプレーナ線路と呼ばれる
ストリップ線路の一部に高次モードを抑制する構造を設
けたものである。Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a bird's-eye view showing the structure of the microstrip line in the first embodiment shown for comparison. FIG. 5 shows a structure in which a higher-order mode is suppressed in a part of a strip line called a coplanar line.
【００２０】図５において第１の導体１は信号が伝搬す
るＡｕ等から成る信号線、第２の導体３は前記第１の導
体に対向するＡｕメッキされたヒートシンク用の金属板
である。第３及び第４の導体８、９は前記第１の導体の
両側に、一定の間隔をおいて配置されたＡｕ等から成る
面状の接地用導体である。２は半絶縁性ＧａＡｓ基板か
ら成る誘電体である。In FIG. 5, a first conductor 1 is a signal line made of Au or the like through which a signal propagates, and a second conductor 3 is an Au-plated metal plate for a heat sink facing the first conductor. The third and fourth conductors 8 and 9 are planar grounding conductors made of Au or the like, which are arranged on both sides of the first conductor at regular intervals. Reference numeral 2 is a dielectric made of a semi-insulating GaAs substrate.
【００２１】コプレーナ線路の場合、電界は信号線１と
その両側に配置した接地用導体８、９の隣接する辺縁部
の間で閉じるべきであるが、実際には誘電体２の裏面に
存在する金属板３と接地用導体８、９との間にも新たな
寄生モードが生ずる。前記寄生モードを低減するために
は、前記第３、第４の接地用導体８、９に前記高次モー
ドによる高周波電流の損失を増大させる多数の突起を形
成すれば良い。In the case of a coplanar line, the electric field should be closed between the signal line 1 and the adjacent edge portions of the grounding conductors 8 and 9 arranged on both sides of the signal line 1, but actually it exists on the back surface of the dielectric 2. A new parasitic mode also occurs between the metal plate 3 and the grounding conductors 8 and 9. In order to reduce the parasitic mode, a large number of protrusions may be formed on the third and fourth grounding conductors 8 and 9 to increase the loss of high frequency current due to the higher order mode.
【００２２】前記多数の突起の形成状況を図５に示す。
図５において、第３の導体８の切り欠き部分の断面形状
に示されるように、各突起はそれぞれ単独の突起から成
っている。一方、第１の実施の形態で述べた縞状の突起
は、図４の５の切り欠き部分に示されているように、信
号線の長手方向に沿った断面には正弦波の形状は現れな
い。The state of formation of the large number of protrusions is shown in FIG.
In FIG. 5, as shown in the cross-sectional shape of the cutout portion of the third conductor 8, each protrusion is a single protrusion. On the other hand, the striped protrusion described in the first embodiment has a sinusoidal shape in the cross section along the longitudinal direction of the signal line, as shown in the cutout portion 5 in FIG. Absent.
【００２３】この様に図５の６及び７に多数の突起を設
けることにより、接地板である前記第３、第４の導体
８、９の全ての方向の電流に対して、高周波電流の損失
を増加することにより、コプレーナ形線路に生ずる高次
のモードを抑制することができる。同様な効果は、第２
の導体全面に突起を設けても得ることができる。また前
記第２の導体と、前記第３、第４の導体に、共に多数の
突起を設けても良い。By thus providing a large number of protrusions 6 and 7 in FIG. 5, loss of high frequency current with respect to the current in all directions of the third and fourth conductors 8 and 9 which are ground plates. It is possible to suppress higher-order modes occurring in the coplanar line by increasing The same effect is
It can also be obtained by providing protrusions on the entire surface of the conductor. Also, a large number of protrusions may be provided on both the second conductor and the third and fourth conductors.
【００２４】以上のべた各実施例の組み合わせから、多
数の変形例を導き出すことができるが、これらはいずれ
も上記第１から第３までの実施の形態について説明した
基本的な発明概念から容易に類推することができる。ま
た以上の説明において、誘電体層として半絶縁性ＧａＡ
ｓ基板を用いる場合について述べたが、同様な効果は例
えばセラミックスやプラスチックスの様な通常の絶縁物
を前記誘電体層として用い、同様な構造のストリップ線
路を構成するときにも得ることができる。A number of modifications can be derived from the combination of the embodiments described above, but all of them can be easily obtained from the basic inventive concept described in the first to third embodiments. It can be analogized. In the above description, the semi-insulating GaA is used as the dielectric layer.
Although the case of using the s substrate has been described, the same effect can be obtained when a strip line having a similar structure is formed by using a normal insulating material such as ceramics or plastics as the dielectric layer. .
【００２５】[0025]
【発明の効果】上記したように本発明のマイクロストリ
ップ線路によれば、高次モードの発生を抑制し、従来に
比べて高い周波数まで周波数分散の小さいマイクロスト
リップ線路を提供することができる。またコプレーナ形
のストリップ線路に対して、高次のモードを抑制する方
法を提供することにより周波数分散を抑制し、超高周
波、超高速ＩＣへのストリップ線路の応用範囲を拡大す
ることが可能になる。As described above, according to the microstrip line of the present invention, it is possible to provide a microstrip line which suppresses the generation of higher-order modes and has a smaller frequency dispersion up to a higher frequency than the conventional one. Further, by providing a method of suppressing higher-order modes for a coplanar stripline, it is possible to suppress frequency dispersion and expand the range of application of the stripline to ultra high frequency and ultra high speed ICs. .
【図１】本発明の第１の実施の形態におけるマイクロス
トリップ線路の構造を示す断面図。FIG. 1 is a sectional view showing a structure of a microstrip line according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態におけるマイクロス
トリップ線路の変形例を示す断面図。FIG. 2 is a sectional view showing a modified example of the microstrip line according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態であるパッチアンテ
ナの構造を示す略図。FIG. 3 is a schematic diagram showing the structure of a patch antenna that is a second embodiment of the present invention.
【図４】本発明の第１の実施の形態におけるマイクロス
トリップ線路の構造を示す切り欠き断面の鳥瞰図。FIG. 4 is a bird's-eye view of a cutaway section showing the structure of the microstrip line according to the first embodiment of the present invention.
【図５】本発明の第３の実施の形態におけるコプレーナ
形ストリップ線路の構造を示す切り欠き断面の鳥瞰図FIG. 5 is a bird's-eye view of a cutaway section showing a structure of a coplanar strip line according to a third embodiment of the present invention.
【図６】従来のマイクロストリップ線路の構造を示す断
面図。FIG. 6 is a sectional view showing the structure of a conventional microstrip line.
【図７】従来のマイクロストリップ線路の伝搬特性FIG. 7: Propagation characteristics of conventional microstrip line
１ マイクロストリップ線路の第１の導体 ２ 半絶縁性ＧａＡｓ基板 ３ 接地導体 ４ 空気 ５ 本発明のマイクロストリップ線路の第１の導体 ６ 本発明のマイクロストリップ線路の接地導体 ７ 本発明のパッチアンテナを構成する第１の導体部分 ８ 本発明のコプレーナ形ストリップ線路の接地導体 ９ 本発明のコプレーナ形ストリップ線路の接地導体 1 1st conductor of a microstrip line 2 Semi-insulating GaAs substrate 3 Ground conductor 4 Air 5 1st conductor of the microstrip line of this invention 6 Ground conductor of the microstrip line of this invention 7 It constitutes the patch antenna of this invention. First conductor portion 8 Ground conductor of coplanar strip line of the present invention 9 Ground conductor of coplanar strip line of the present invention
Claims (2)
導体と、 前記第１の導体に対向し、前記誘電体の下面を広く覆う
ように形成された面状の第２の導体とを有し、 かつ前記第１の導体の下面又は上面、又は前記第２の導
体の前記第１の導体と対向する表面に、前記第１の導体
の長手方向に沿って縞状の凹凸を形成することを特徴と
するマイクロストリップ線路1. A linear first conductor arranged on an upper surface of a dielectric, and a planar second conductor facing the first conductor and widely covering a lower surface of the dielectric. A conductor, and on the lower surface or the upper surface of the first conductor, or on the surface of the second conductor facing the first conductor, stripe-shaped irregularities are formed along the longitudinal direction of the first conductor. Microstrip line characterized by forming
導体と、 前記第１の導体に対向し、前記誘電体の下面を広く覆う
ように形成された面状の第２の導体と前期誘電体の上面
において、前記第１の導体の両側に前記第１の導体と一
定の間隔をおいて配置された面状の第３及び第４の導体
とを有し、 かつ前記第３又は第４の導体又は前記第２の導体の対向
する表面に多数の突起を設けることを特徴とするコプレ
ーナ形ストリップ線路。2. A linear first conductor arranged on the upper surface of the dielectric, and a planar second conductor facing the first conductor and widely covering the lower surface of the dielectric. On the upper surface of the conductor and the first dielectric, and on both sides of the first conductor, plane-shaped third and fourth conductors arranged at a constant interval from the first conductor, and A coplanar strip line in which a large number of protrusions are provided on the surfaces of the third or fourth conductor or the second conductor which face each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8039640A JPH09232820A (en) | 1996-02-27 | 1996-02-27 | Microstrip line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8039640A JPH09232820A (en) | 1996-02-27 | 1996-02-27 | Microstrip line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09232820A true JPH09232820A (en) | 1997-09-05 |
Family
ID=12558698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8039640A Pending JPH09232820A (en) | 1996-02-27 | 1996-02-27 | Microstrip line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09232820A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515554B2 (en) | 1998-07-24 | 2003-02-04 | Murata Manufacturing Co. Ltd | High-frequency circuit device and communication apparatus |
| US6914502B2 (en) | 2000-11-17 | 2005-07-05 | Kanji Otsuka | Wiring structure for transmission line having grooved conductors |
| US7161449B2 (en) | 2003-09-05 | 2007-01-09 | Ntt Docomo, Inc. | Coplanar waveguide resonator |
| JP2008160751A (en) * | 2006-12-26 | 2008-07-10 | Toshiba Corp | Microwave circuit board |
| US7839240B2 (en) | 2006-10-05 | 2010-11-23 | Fujikura Ltd. | Reflection-type banpass filter |
| US7852173B2 (en) | 2006-10-05 | 2010-12-14 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7855622B2 (en) | 2006-10-05 | 2010-12-21 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7855621B2 (en) | 2006-10-05 | 2010-12-21 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7859366B2 (en) | 2006-10-05 | 2010-12-28 | Fujikura Ltd. | Reflection-type bandpass filter |
-
1996
- 1996-02-27 JP JP8039640A patent/JPH09232820A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515554B2 (en) | 1998-07-24 | 2003-02-04 | Murata Manufacturing Co. Ltd | High-frequency circuit device and communication apparatus |
| US6914502B2 (en) | 2000-11-17 | 2005-07-05 | Kanji Otsuka | Wiring structure for transmission line having grooved conductors |
| KR100524350B1 (en) * | 2000-11-17 | 2005-10-28 | 간지 오쯔까 | Wiring structure for transmission line |
| US7161449B2 (en) | 2003-09-05 | 2007-01-09 | Ntt Docomo, Inc. | Coplanar waveguide resonator |
| US7839240B2 (en) | 2006-10-05 | 2010-11-23 | Fujikura Ltd. | Reflection-type banpass filter |
| US7852173B2 (en) | 2006-10-05 | 2010-12-14 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7855622B2 (en) | 2006-10-05 | 2010-12-21 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7855621B2 (en) | 2006-10-05 | 2010-12-21 | Fujikura Ltd. | Reflection-type bandpass filter |
| US7859366B2 (en) | 2006-10-05 | 2010-12-28 | Fujikura Ltd. | Reflection-type bandpass filter |
| JP2008160751A (en) * | 2006-12-26 | 2008-07-10 | Toshiba Corp | Microwave circuit board |
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