JPH09232243A - Diffusion furnace apparatus - Google Patents

Diffusion furnace apparatus

Info

Publication number
JPH09232243A
JPH09232243A JP3387396A JP3387396A JPH09232243A JP H09232243 A JPH09232243 A JP H09232243A JP 3387396 A JP3387396 A JP 3387396A JP 3387396 A JP3387396 A JP 3387396A JP H09232243 A JPH09232243 A JP H09232243A
Authority
JP
Japan
Prior art keywords
reaction tube
fork
diffusion furnace
quartz
furnace apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3387396A
Other languages
Japanese (ja)
Inventor
Masahito Sawamura
雅人 沢村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP3387396A priority Critical patent/JPH09232243A/en
Publication of JPH09232243A publication Critical patent/JPH09232243A/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a diffusion furnace apparatus in which particles are not generated and which restrains the air from being mixed by providing a remaining installation cap which is used to prevent the air from being mixed from a gas exit at a reaction tube and which is constituted so as to be capable of being taken into, and out from, the reaction tube by using a fork. SOLUTION: A diffusion furnace apparatus is constituted mainly of a horizontal quartz reaction tube 20 and of a heater used to heat the reaction tube 20, and it is provided with a remaining installation cap 10 which is used to restrain the air from being mixed from a gas exit 7 as the open end of the reaction tube 20 and which is constituted so as to be capable of being taken into, and out from, the reaction tube 20 by using a fork. The remaining installation cap 10 comprises a rectangular or trapezoidal cutout at the lower part so that the square pillar part of the fork is inserted easily, and it is constituted of three disk-shaped quartz plates whose diameter is smaller than the inside diameter of the reaction tube 20 and of three quartz support rods which are arranged in parallel so as to support and fix the three quartz plates in such a way that their surfaces are faced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は拡散炉装置に関す
る。
TECHNICAL FIELD The present invention relates to a diffusion furnace apparatus.

【0002】[0002]

【従来の技術】半導体装置の製造工程においては、半導
体ウェーハ(以下単にウェーハという)に熱酸化により
酸化膜等を形成する拡散炉装置が用いられている。従来
の拡散炉装置は、図4に示すように、一端にガス導入管
が設けられ、他端が開放された石英製の反応管20と、
この反応管を加熱する為のヒータ(図示せず)とから主
に構成されていた。そしてウェーハ5は石英製のボート
4Aに載置され、反応管20の開放端であるガス出口7
からフォークにより内部に搬送されるようになってい
た。
2. Description of the Related Art In a semiconductor device manufacturing process, a diffusion furnace apparatus is used for forming an oxide film or the like on a semiconductor wafer (hereinafter simply referred to as a wafer) by thermal oxidation. As shown in FIG. 4, a conventional diffusion furnace apparatus includes a quartz reaction tube 20 having a gas introduction tube provided at one end and an open other end,
It was mainly composed of a heater (not shown) for heating the reaction tube. Then, the wafer 5 is placed on the quartz boat 4A, and the gas outlet 7 which is the open end of the reaction tube 20.
It was supposed to be transported inside by a fork.

【0003】このように構成された拡散炉装置において
は、ウェーハの搬入時に反応管20内に大気が流入する
為、ウェーハ5は大気中の酸素による酸化及び不純物に
よる汚染を受けることになる。この対策として反応管の
ガス出口7を石英製の内蓋で仕切る方法(実開平3−4
1927号公報)や図5に示すように、溝11によりウ
ェーハを載置する複数の石英ボード12をのせる石英ボ
ード保持具13に遮蔽板14を設ける方法(特開昭63
−62316号公報)が提案されている。
In the thus constructed diffusion furnace apparatus, since the atmosphere flows into the reaction tube 20 when the wafer is loaded, the wafer 5 is oxidized by oxygen in the atmosphere and contaminated by impurities. As a countermeasure against this, a method of partitioning the gas outlet 7 of the reaction tube with an inner lid made of quartz (actually 3-4
1927) or as shown in FIG. 5, a method of providing a shielding plate 14 on a quartz board holder 13 on which a plurality of quartz boards 12 on which wafers are mounted by grooves 11 is placed (Japanese Patent Laid-Open No. 63-63,631).
No. 62316) has been proposed.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述し
た従来の拡散炉装置のうち、反応管のガスの出口を内蓋
で仕切る方法では、石英製の内蓋が反応管や反応管内に
設けた突起に接触する為、パーティクルが発生しウェー
ハ上に付着するという欠点がある。又、図5に示したよ
うに、石英ボード保持具に遮蔽板を設ける方法では、各
石英ボードの大きさや形状に合わせた石英ボード保持具
の全てを設計変更し遮蔽板を設けなければならない為、
石英ボード保持具が高価になるという欠点がある。
However, in the above-mentioned conventional diffusion furnace apparatus, in the method of partitioning the gas outlet of the reaction tube with the inner lid, the quartz inner lid is used for the reaction tube and the projection provided in the reaction tube. Therefore, there is a drawback that particles are generated and adhere to the wafer. Further, as shown in FIG. 5, in the method of providing the shield plate on the quartz board holder, all the quartz board holders corresponding to the size and shape of each quartz board must be redesigned to provide the shield plate. ,
The disadvantage is that the quartz board holder is expensive.

【0005】本発明の目的は、簡単な治具を設けること
によりパーティクルを発生させることなく、大気の混入
を抑制できる拡散炉装置を提供することにある。
An object of the present invention is to provide a diffusion furnace device which can suppress the mixture of the atmosphere without generating particles by providing a simple jig.

【0006】[0006]

【課題を解決するための手段】本発明の拡散炉装置は、
横型の反応管を有し、この反応管のガスの出口から半導
体ウェーハを載置したボートをフォークにより出し入れ
する拡散炉装置において、前記反応管のガス出口からの
大気混入を抑制する為の、前記フォークにより、前記反
応管内に出し入れ可能に構成された残置キャップを備え
ていることを特徴とするものであり、特に残置キャップ
は、下部にフォークの角柱部が入る切欠きを有する円板
状の複数の石英板と、この石英板を表面が対向するよう
に平行に並べて支持し固定する複数の支持棒とから構成
されるものである。
The diffusion furnace apparatus of the present invention comprises:
In a diffusion furnace device having a horizontal reaction tube, a boat on which a semiconductor wafer is placed from a gas outlet of the reaction tube is put in and out by a fork, in order to suppress atmospheric mixture from the gas outlet of the reaction tube, It is characterized in that it is provided with a residual cap configured to be able to be put into and taken out of the reaction tube by a fork, and in particular, the residual cap has a plurality of disk-shaped discs each having a notch into which a prism portion of the fork is inserted. And a plurality of support rods that support and fix the quartz plates in parallel so that the surfaces thereof face each other.

【0007】[0007]

【発明の実施の形態】次に本発明について図面を参照し
て説明する。図1は本発明の実施の形態を説明する為の
拡散炉装置の断面図であり、ウェーハを載置したボート
と残置キャップを反応管内に静置した場合を示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a diffusion furnace device for explaining an embodiment of the present invention, showing a case where a boat on which a wafer is placed and a remaining cap are left stationary in a reaction tube.

【0008】図1を参照すると拡散炉装置は、横型の石
英製の反応管20と、この反応管を加熱する為のヒータ
(図示せず)とから主に構成されるが、反応管20の開
放端であるガス出口7からの大気混入を抑制する為のフ
ォークにより反応管20内に出し入れ可能に構成された
残置キャップ10を特に有しているものである。以下こ
の残置キャップ10について、図2(a),(b)に示
す残置キャップの正面図と側面図及び図3に示す残置キ
ャップ10とボート4に載置されたウェーハ5をフォー
クに載せた場合の側面図を用いて更に説明する。
Referring to FIG. 1, the diffusion furnace apparatus is mainly composed of a horizontal quartz reaction tube 20 and a heater (not shown) for heating the reaction tube. In particular, the residual cap 10 configured to be able to be put in and taken out from the reaction tube 20 by a fork for suppressing atmospheric mixture from the gas outlet 7 which is an open end is provided. 2A and 2B are front views and side views of the remaining cap 10 and the remaining cap 10 shown in FIG. 3 and the wafer 5 mounted on the boat 4 are mounted on a fork. Will be further described with reference to the side view of FIG.

【0009】残置キャップ10は、図2(a),(b)
に示したように、下部にフォーク6の角柱部6Bが容易
に入る矩形状又は台形状の切欠き2を有し、反応管の内
径より小さい径の円板状の3枚の石英板1と、この3枚
の石英板1をその表面が対向するように平行に並べて支
持し固定する3本の石英製の支持棒3とから構成されて
いる。この残置キャップ10は、ウェーハ5を載置した
石英製のボート4をフォーク6のへら部6A上に載せた
後にフォーク6の角柱部6B上に載せられる。フォーク
6によりボート4と残置キャップ10とは、図1に示し
たように、反応管20内に静置(ソフトランディング)
され、ウェーハ5の熱処理や酸化処理が行なわれる。
The remaining cap 10 is shown in FIGS. 2 (a) and 2 (b).
As shown in FIG. 3, a rectangular or trapezoidal notch 2 into which the prismatic portion 6B of the fork 6 can be easily inserted is provided, and three disk-shaped quartz plates 1 having a diameter smaller than the inner diameter of the reaction tube are provided. The three quartz plates 1 are arranged in parallel so that their surfaces are opposed to each other, and are supported and fixed by three quartz support rods 3. The remaining cap 10 is placed on the prismatic portion 6B of the fork 6 after the quartz boat 4 on which the wafer 5 is placed is placed on the spatula portion 6A of the fork 6. As shown in FIG. 1, the boat 4 and the remaining cap 10 are allowed to stand in the reaction tube 20 by the fork 6 (soft landing).
Then, the heat treatment and the oxidation treatment of the wafer 5 are performed.

【0010】このように本実施の形態によれば、ウェー
ハ5を載置したボート4が反応管20内へ搬送される際
に、残置キャップ10は反応管20のガス出口7を遮蔽
する形となる為、ウェーハ5の入炉中に不必要な大気が
炉内のガス中に混入するのを抑制することができる。例
えば、残置キャップ10を反応管20内に接触せずに容
易に入れる為に、反応管の内径が220mmの時、石英
板1の半径を180mmにした場合、残置キャップ10
は反応管20のガス出口7を約67%ふさぐことが可能
であり、大気の混入を大幅に抑制可能である。
As described above, according to the present embodiment, when the boat 4 on which the wafer 5 is placed is transferred into the reaction tube 20, the remaining cap 10 shields the gas outlet 7 of the reaction tube 20. Therefore, it is possible to prevent unnecessary atmosphere from being mixed into the gas in the furnace during the entrance of the wafer 5. For example, when the inner diameter of the reaction tube is 220 mm and the radius of the quartz plate 1 is 180 mm in order to easily insert the remaining cap 10 into the reaction tube 20 without contacting it, the remaining cap 10
It is possible to block the gas outlet 7 of the reaction tube 20 by about 67%, and it is possible to greatly suppress the mixture of the atmosphere.

【0011】尚、上記実施の形態においては、3枚の石
英板1と3本の支持棒3とで残置キャップを構成した場
合について説明したが、これに限定されるものではな
く、2枚以上の石英板と2本以上の支持棒とにより残置
キャップを構成してもよい。
In the above embodiment, the case where the remaining cap is composed of the three quartz plates 1 and the three support rods 3 has been described, but the present invention is not limited to this, and two or more sheets are used. The remaining cap may be constituted by the quartz plate and two or more support rods.

【0012】[0012]

【発明の効果】以上説明したように本発明は、フォーク
により反応管内に出し入れ可能に構成された残置キャッ
プ5を備えている為、パーティクルを発生させることな
く反応炉内への大気の混入を抑制できる拡散炉装置が得
られるという効果がある。
As described above, according to the present invention, since the residual cap 5 is provided so that it can be put into and taken out of the reaction tube by the fork, the mixture of the atmosphere into the reaction furnace is suppressed without generating particles. There is an effect that a diffusion furnace device that can be obtained can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態を説明する為の拡散炉装置
の断面図。
FIG. 1 is a sectional view of a diffusion furnace device for explaining an embodiment of the present invention.

【図2】残置キャップの正面図及び側面図。FIG. 2 is a front view and a side view of a residual cap.

【図3】残置キャップとボートとを載せた場合のフォー
クの側面図。
FIG. 3 is a side view of the fork when the remaining cap and the boat are placed.

【図4】従来の拡散炉装置の一例の断面図。FIG. 4 is a sectional view of an example of a conventional diffusion furnace device.

【図5】従来の拡散炉装置に用いられる石英ボード保持
具の斜視図。
FIG. 5 is a perspective view of a quartz board holder used in a conventional diffusion furnace device.

【符号の説明】[Explanation of symbols]

1 石英板 2 切欠き 3 支持棒 4,4A ボート 5 ウェーハ 6 フォーク 6A へら部 6B 角柱部 7 ガス出口 10 残置キャップ 11 溝 12 石英ボード 13 石英ボード保持具 14 遮蔽板 1 Quartz Plate 2 Notch 3 Support Rod 4, 4A Boat 5 Wafer 6 Fork 6A Spatula 6B Square Column 7 Gas Outlet 10 Remaining Cap 11 Groove 12 Quartz Board 13 Quartz Board Holder 14 Shielding Plate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 横型の反応管を有し、この反応管のガス
の出口から半導体ウェーハを載置したボートをフォーク
により出し入れする拡散炉装置において、前記反応管の
ガス出口からの大気混入を抑制する為の、前記フォーク
により、前記反応管内に出し入れ可能に構成された残置
キャップを備えていることを特徴とする拡散炉装置。
1. A diffusion furnace apparatus having a horizontal reaction tube, in which a boat on which a semiconductor wafer is placed is taken in and out from a gas outlet of the reaction tube by a fork, and atmospheric mixing from a gas outlet of the reaction tube is suppressed. A diffusion furnace device for the purpose of comprising a remaining cap configured to be able to be taken in and out of the reaction tube by the fork.
【請求項2】 残置キャップは、下部にフォークの角柱
部が入る切欠きを有する円板状の複数の石英板と、この
石英板を表面が対向するように平行に並べて支持し固定
する複数の支持棒とから構成される請求項1記載の拡散
炉装置。
2. The remaining cap comprises a plurality of disk-shaped quartz plates having a notch in which a prism portion of a fork is inserted in the lower portion, and a plurality of quartz plates arranged in parallel so as to face each other and supported and fixed. The diffusion furnace apparatus according to claim 1, comprising a support rod.
JP3387396A 1996-02-21 1996-02-21 Diffusion furnace apparatus Pending JPH09232243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3387396A JPH09232243A (en) 1996-02-21 1996-02-21 Diffusion furnace apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3387396A JPH09232243A (en) 1996-02-21 1996-02-21 Diffusion furnace apparatus

Publications (1)

Publication Number Publication Date
JPH09232243A true JPH09232243A (en) 1997-09-05

Family

ID=12398640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3387396A Pending JPH09232243A (en) 1996-02-21 1996-02-21 Diffusion furnace apparatus

Country Status (1)

Country Link
JP (1) JPH09232243A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04118923A (en) * 1990-09-10 1992-04-20 Yamaha Corp Heat treatment furnace
JPH04243127A (en) * 1991-01-18 1992-08-31 Meidensha Corp Open tube type predeposition diffusion method
JP4125444B2 (en) * 1999-05-31 2008-07-30 株式会社リコー Thermal recording material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04118923A (en) * 1990-09-10 1992-04-20 Yamaha Corp Heat treatment furnace
JPH04243127A (en) * 1991-01-18 1992-08-31 Meidensha Corp Open tube type predeposition diffusion method
JP4125444B2 (en) * 1999-05-31 2008-07-30 株式会社リコー Thermal recording material

Similar Documents

Publication Publication Date Title
JPH09232243A (en) Diffusion furnace apparatus
JP2005005379A (en) Method and vertical boat for heat-treating semiconductor wafer
JP2001185502A (en) Impurity diffusion method in semiconductor element manufacturing process, impurity diffusing device for use therein and semiconductor element manufactured therefrom
JPS62206826A (en) Thermal treatment equipment for semiconductor
JPH09237781A (en) Heat treatment boat
JPS62140413A (en) Vertical type diffusion equipment
JPH06132390A (en) Wafer boat
US6210594B1 (en) Near substrate reactant homogenization apparatus
JPS63283124A (en) Reaction furnace
JPS5961930A (en) Wafer processing apparatus
JPS5840824A (en) Heat treatment device for semiconductor wafer
JPH0222535B2 (en)
JP2001313268A (en) Heat treating boat
JPH11150077A (en) Thermal diffusion equipment of semiconductor wafer
JPH0783002B2 (en) Semiconductor heat treatment equipment
JPH08316156A (en) Apparatus for manufacturing semiconductor device
JPH0640545B2 (en) Wafer heat treatment method
JP2004221150A (en) Semiconductor manufacturing apparatus
JPS6220999Y2 (en)
JPS6159722A (en) Horizontal-type heat-treating furnace
JPS63110631A (en) Semiconductor manufacturing system
JPH02254717A (en) Mamufacture equipment for semiconductor device
JPH0369117A (en) Manufacturing apparatus of semiconductor device
JPS61125137A (en) Oxidization device
JPS60107826A (en) Diffusing method of impurity to semiconductor

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19980623