JPH0921996A - Active matrix type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix type liquid crystal display device in which the decrease of power consumption is achieved by reducing element capacitances sufficiently without impairing a switching characteristic. SOLUTION: This display device 1 is provided with plural pixel electrodes 191 arranged along data busses 111, upper part electrodes and lower part electrodes 131 arranged via a dielectric layer while having overlapped areas each other and an electrode substrate provided with two terminal nonlinear elements 121 connecting data busses 111 and pixel electrodes 191. and the upper part electrode includes a first electrode 151a and a second electrode 151b canceling the variation of the overlapped area and respective outlines of the first and second electrodes 151a, 151b are folded back in the lower part electrode 131.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type display device using a two-terminal non-linear element such as a MIM (Metal Insulator Metal) element as a switch element.

[0002]

2. Description of the Related Art MI is used as a switching element for each display pixel.
An active matrix type display device using a two-terminal nonlinear element such as an M element, a MIS element or a SiNx element has a high definition equivalent to that of an active matrix type display device including a three-terminal nonlinear element such as a thin film transistor as a switch element. Since it is capable of displaying, has a small number of manufacturing steps, and can be manufactured at low cost and with high manufacturing yield, it is used for displaying on a television or for displaying on a word processor, a personal computer, or the like.

A general active matrix type liquid crystal display device using an MIM element as a two-terminal nonlinear element will be briefly described. In this liquid crystal display device, a liquid crystal material is held between a pair of electrode substrates via an alignment film. For example, as shown in FIG. 7, one of the electrode substrates (900) is provided with a plurality of data buses (91
1), multiple pixel electrodes arranged between the data buses (911)
(921) includes a MIM element (931) electrically connecting the pixel electrode (921) and the data bus (911). Although not shown, the other electrode substrate includes a plurality of rows of stripe-shaped counter electrodes corresponding to the pixel electrode groups in each row.

By the way, the MIM element (931) is composed of a lower electrode (941) derived from the data bus (911) and having a predetermined electrode width (W), and an insulating element (not shown) arranged on the lower electrode (941). A film, an upper electrode (951) having a predetermined electrode width (L), which is arranged so as to cross the lower electrode (941) through this insulating film and has both ends electrically connected to the pixel electrode (931). Including and Then, the counter electrode is sequentially scanned as a scanning line for each row, and a display signal corresponding to the scanning of the counter electrode is applied to the data bus to display an image.

[0005]

By the way, the liquid crystal display device is often driven by a battery because of its portability, so that further lower power consumption is required. In the liquid crystal display device described above, the pixel capacitance between the pixel electrode and the counter electrode is Cp, and the MIM element capacitance is CMIM.
, Where the voltage between the data bus and the counter electrode is V, the voltage Vp applied to the pixel capacitance Cp and the voltage VMIM applied to the element capacitance CMIM are expressed by the following equations.

Vp = V * CMIM / (Cp + CMIM) V
MIM = V * Cp / (Cp + CMIM) Therefore, in order to achieve low power consumption of the liquid crystal display device, it is desirable that the voltage VMIM applied to the element capacitance CMIM be sufficiently large, and therefore, compared with the pixel capacitance Cp. Therefore, it is necessary to set the element capacitance CMIM sufficiently small.

In the conventional structure, the element capacitance CMIM is
The overlapping area (S) of the lower electrode and the upper electrode intersecting with each other, that is, the product of the electrode width (W) of the lower electrode and the electrode width (L) of the lower electrode, the insulating film between the lower electrode and the upper electrode It is determined by the dielectric constant and the distance between the electrodes.

Therefore, it is conceivable to pattern each electrode width (L), (W) narrowly, but it is not possible to make it extremely small because it is restricted by the exposure accuracy of the exposure apparatus. Further, the dielectric constant of the insulating film is peculiar to the material, and it is difficult to control it to a large extent. Further, if the film thickness is increased to increase the distance between the electrodes, the switch characteristics of the MIM element deteriorate. .

The present invention has been made in response to the above technical problems, and it is an active matrix in which the element capacitance is sufficiently reduced without impairing the switch characteristics, and thereby low power consumption is achieved. An object is to provide a mold display device.

[0010]

According to a first aspect of the present invention, a plurality of data buses arranged on an insulating substrate, a plurality of pixel electrodes arranged along the data buses, and a dielectric layer are provided. A first electrode substrate provided with a two-terminal non-linear element for connecting the data bus and the pixel electrode, the first electrode substrate being opposed to the pixel electrode, the first electrode substrate including an upper electrode and a lower electrode arranged to have an overlapping region with each other. In an active matrix type display device including a second electrode substrate including a counter electrode and a light modulation layer sandwiched between the first electrode and the second electrode, the upper electrode is configured to change the overlap region. It is characterized in that it includes a first electrode and a second electrode that cancel each other, and the respective contour lines of the first and second electrodes are folded back in the lower electrode.

According to a second aspect of the present invention, the first electrode substrate according to the first aspect is arranged such that the second electrode layer is disposed on the lower electrode with the second dielectric layer and the second overlapping region. It is characterized by including.

According to a third aspect of the present invention, the second upper electrode according to the second aspect includes a third electrode and a fourth electrode for canceling the fluctuation of the second overlapping region. The outline of each of the four electrodes is folded inside the lower electrode.

According to a fourth aspect of the present invention, a plurality of data buses arranged on an insulating substrate, a plurality of pixel electrodes arranged along the data buses, and a region overlapping each other via a dielectric layer. 2 including an upper electrode and a lower electrode arranged to have the data bus and the pixel electrode connected.
A first electrode substrate having a terminal non-linear element, a second electrode substrate including a counter electrode facing the pixel electrode, and a light modulation layer sandwiched between the first electrode and the second electrode. In the active matrix type display device, the lower electrode includes a first electrode and a second electrode for canceling the variation of the overlapping region, and respective contour lines of the first and second electrodes are folded back in the upper electrode. It is characterized by being.

According to a fifth aspect of the present invention, the first electrode substrate according to the fourth aspect is arranged such that the second lower electrode is disposed below the upper electrode with a second overlapping region with a second dielectric layer interposed therebetween. It is characterized by including.

According to a sixth aspect of the present invention, the second lower electrode according to the fifth aspect includes a third electrode and a fourth electrode for canceling the fluctuation of the second overlapping region, and the third and the third electrodes. The outline of each of the four electrodes is folded inside the upper electrode.

[0016]

According to the active matrix type display device of the present invention, there are provided two terminals including an upper electrode and a lower electrode which are arranged so as to have an overlapping region with each other with a dielectric layer interposed therebetween and which connects a data bus and a pixel electrode. The contour line of one of the upper electrode and the lower electrode of the nonlinear element is folded back inside the other electrode.

With this, the overlapping region of the upper electrode and the lower electrode can be controlled to be sufficiently small without being restricted by the electrode width of each electrode, whereby the voltage applied to the pixel capacitance can be effectively reduced. Can be increased. Therefore, according to the present invention, low power consumption of the device is achieved.

Moreover, according to the present invention, it is not necessary to increase the film thickness of the dielectric layer or the like, and the switch characteristics of the two-terminal nonlinear element are not deteriorated. Further, according to the present invention, the electrode having the contour folded back within one of the electrodes includes at least the first and second electrodes so as to cancel the variation of the overlapping region between the electrodes, and therefore the misalignment of the mask pattern, etc. Fluctuations in device characteristics due to the above are sufficiently reduced.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A light transmissive active matrix type liquid crystal display device according to an embodiment of the present invention will be described below with reference to the drawings. As shown in FIGS. 1 and 2, the active matrix type liquid crystal display device (1) of this embodiment has an array substrate (1
A nematic liquid crystal (400) is formed between the (00) and the counter substrate (300) with the alignment films (411) and (421) interposed between the substrates (100) and (300).
The polarizing plates (431) and (441) are attached to the outer surfaces of the substrates (100) and (300) so that the polarizing axes are orthogonal to each other and are sandwiched by being twisted by 0 °.

The array substrate (100) is a transparent glass substrate (10
1) A plurality of data buses (111) that are substantially parallel to each other are arranged in the column direction above. This data bus (111) is for tantalum (T
a) The film is patterned by photolithography. ITO between each data bus (111)
Pixel electrodes (191) made of (Indium Tin Oxide) are arranged. Then, the data bus (111) and the pixel electrode (191)
Are electrically connected to each other via the MIM element (121).
Data bus (111) is designed to prevent disconnection and low resistance.
It may have a laminated structure with an ITO film forming the pixel electrode (191), or may have a laminated structure with another metal film.

The counter substrate (300) is a transparent glass substrate (30
1) ITO on top of the data bus (111)
Is formed by arranging a plurality of stripe-shaped counter electrodes (311) made of. In order to realize color display, a color filter may be arranged between the glass substrate (301) and the counter electrode (311). If it is of a reflective type, each pixel electrode (191) may be made of a metal such as aluminum (Al).

By the way, the MIM element (121) of this embodiment
Is a lower electrode (131) that extends from the data bus (111) in a direction orthogonal to the data bus (111), that is, in the direction of each pixel electrode (191) and is patterned at the same time as the data bus (111).
An insulating film (141) having a film thickness of 100 nm formed by anodizing the lower electrode (131) covering the lower electrode (131),
Then, an overlapping region (S) with the lower electrode (131) is formed on the insulating film (141).
1) and (S2), one end of which is disposed opposite to each other with the contour line folded back inside the lower electrode (131), and the other end of which is electrically connected to the pixel electrode (191). 151a) and the second upper electrode (151b).

The lower electrode 131 is patterned to have an electrode width (L) of 6 μm. The first upper electrode (151a) and the second upper electrode (151b) are each formed by sputtering a chromium (Cr) film formed to a thickness of 0.3 μm by photolithography, and each electrode width ( Each of W1) and (W2) is patterned to a thickness of 4 μm.

Then, each of the first upper electrode (151a) and the second upper electrode (151b) is 1 with respect to the lower electrode (131).
It is aligned and patterned to have overlapping lengths (ΔL1) and (ΔL2) of μm.

As a result, the overlapping regions (S1) and (S2) of the first upper electrode (151a) and the second upper electrode (151b) and the lower electrode (131), which constitute the MIM element (121), are formed in the upper portions. The widths (W1) and (W2) of the electrodes (151a) and (151b) and the overlapping lengths (ΔL1) and (ΔL2) of the upper electrodes (151a) and (151b) with respect to the lower electrode (131) are substantially determined. It Therefore,
The electrode width (L) of the lower electrode (131) is 6 μm, and each upper electrode (1
Although the electrode widths (W1) and (W2) of 51a) and (151b) are 4 μm, the overlapping areas (S1) and (S
2) could be reduced sufficiently.

As a result, the element capacitance (CMIM) of the MIM element (121) can be reduced to about 1/3 of that of the conventional one, and the drive voltage can be reduced by about 3/4 to obtain the same contrast ratio as the conventional one. We were able to.

Further, according to this embodiment, each upper electrode (1
51a), (151b) and lower electrode (131) overlap area (S1),
Even though (S2) is sufficiently reduced, the data bus
In the (111) direction, the lower electrode (131) and each upper electrode (151a), (151
Even if there is a pattern shift between (b) and each of the upper electrodes (151a), (1
Since 51b) is exposed and developed with the same mask and patterned, the variation of the overlapping area is offset by the increase or decrease of the respective overlapping areas (S1) and (S2), so that the device capacitance (CMIM) is in-plane or in the lot. There is no variation between them. Even if the lower electrode (131) and the upper electrodes (151a, 151b) are misaligned in the direction substantially orthogonal to the data bus (111), the contours of the upper electrodes (151a), (151b) The line is folded inside the lower electrode (131), in other words,
Since the lower electrode (131) extends from the ends of the upper electrodes (151a) and (151b) with a margin of at least 2 μm in a direction substantially orthogonal to the data bus (111), the respective overlapping regions (S1) , (S2) does not change, and the element capacitance (CMIM) does not vary within the surface or between lots.

In the above-mentioned embodiment, the first upper electrode (151a) and the second upper electrode (151b) constituting the upper electrode are arranged so that their end faces face each other. As shown, they may be arranged in a zigzag pattern. By doing so, the first upper electrode (151a) and the second upper electrode (151b)
Even if the surfaces facing each other are sufficiently close to each other, they do not short-circuit with each other due to defective patterning or the like.

Further, two or more sets of such upper electrodes may be used in combination. However, considering the increase of the element capacitance (CMIM) and the decrease of the effective display area, one set is preferable.

Next, the active matrix type display device of the second embodiment will be described with reference to FIG. Note that M
Since the structure is the same except for the IM element, only the MIM element portion will be described with the same reference numerals attached.

The MIM element (121) of this embodiment extends from the data bus (111) toward each pixel electrode (191) and is formed at the same time as the data bus (111). An insulating film (not shown) formed by anodizing the lower electrode (131) covering (131), and the lower electrode (1
31) and a first upper electrode (151a) and a second upper electrode (151b), which are arranged to face each other with overlapping regions (S1) and (S2) and one ends of which are connected to the pixel electrode (191), respectively. Includes top electrode.

More specifically, the lower electrode 131 has a data bus so that the contour line is folded back in the first upper electrode 151a.
A first lower electrode (131a) led out along the (111) direction, and a second lower electrode (131a) led out to the side opposite to the first lower electrode (131a) so that the contour line is folded back. Lower electrode (1
31b) and included. Each of the first and second lower electrodes (131a) and (131b) is patterned to have electrode widths (L1) and (L2) of 4 μm.

The first upper electrode (151a) and the second upper electrode (151b) are each 0.3 μm thick by sputtering.
A thick chromium (Cr) film is patterned by photolithography simultaneously with patterning of the data bus (111), and the first and second lower electrodes (131) are formed.
a) and (131b) have electrode widths (L1) and (L2) which are sufficiently larger than the electrode widths (W1) and (W2) of 8 μm.

The first lower electrode (131a) and the first upper electrode (151a), and the second lower electrode (131b) and the second upper electrode (151b) have overlapping lengths (ΔL1) and (ΔL2 of 1 μm, respectively. ).

As a result, the upper electrodes (151a), (151b) and the lower electrodes (131a), (131b) constituting the MIM element (121) are formed.
The overlapping regions (S1) and (S2) with the lower electrode (131)
a), (131b) electrode width (L1), (L2) and each lower electrode
It is substantially determined by the overlapping lengths (ΔL1) and (ΔL2) of (131a), (131b) and the upper electrodes (151a), (151b). Therefore, the electrode width (L1), (L1) of each lower electrode (131a), (131b)
2) is 4 μm, and the electrode width of each upper electrode (151a), (151b) (W
Despite the fact that 1) and (W2) are 8 μm, the element capacitance (CMIM) can be sufficiently reduced as compared with the conventional one,
As a result, the drive voltage could be reduced by about 3/4 when obtaining the same contrast ratio as the conventional one.

Also in this embodiment, similarly to the first embodiment described above, even if a pattern shift occurs between the lower electrodes (131a), (131b) and the upper electrodes (151a), (151b). The element capacitance (CMIM) does not vary within the surface or between lots.

Next, an active matrix type display device of the third embodiment will be described with reference to FIG. Note that M
Since the structure is the same except for the IM element, only the MIM element portion will be described with the same reference numerals attached.

In this embodiment, the two-terminal nonlinear element is the first
And a second MIM element (121a), (121b) in series. It is generally known that a liquid crystal material is deteriorated when it receives a DC voltage for a long time, and normally the directionality of the voltage is inverted every predetermined period such as every one frame period. Normally, the MIM element has positive and negative voltage (V) -current (I) characteristics and does not have perfect symmetry. However, when AC driving is performed as described above, a DC voltage is applied to the liquid crystal material due to the asymmetry of the MIM element.

Therefore, by connecting the MIM elements in series as in this embodiment, the asymmetry of the MIM elements is compensated. The configuration will be described below. The first MIM element (121a) of this embodiment extends from the data bus (111) in the direction of each pixel electrode (191) and further extends along the data bus (111) so as to face each other. Simultaneously formed first and second upper electrodes (151a), (151b)
And these upper electrodes (151a), (151b)
The lower electrode 131 has a substantially rectangular shape and is disposed via an insulating film (not shown) so as to have overlapping regions (S1) and (S2) overlapping with a) and (151b).

More specifically, the electrode widths (W1) and (W2) of the first upper electrode (151a) and the second upper electrode (151b) are 4 μm so that the contour lines are respectively folded inside the lower electrode (131). Is patterned. Then, the first and second upper electrodes 151a and 151b and the lower electrode 131 are aligned with overlapping lengths (ΔL1) and (ΔL2) of 1 μm, respectively.

Further, the second MIM element (121b) is arranged so as to face the lower electrode (131) described above with a predetermined insulating region (S3), (S4) interposed therebetween via a similar insulating film, and one end of which is disposed. It includes third and fourth upper electrodes (151c), (151d) electrically connected to the pixel electrode (191). Then, the third upper electrode (1
51c) and the fourth upper electrode (151d) have electrode widths (W3), (W4) so that the contour lines are folded back inside the lower electrode (131).
Are patterned with a thickness of 4 μm. Furthermore, the third and fourth upper electrodes 151c, 151d are aligned with the lower electrode 131 with overlapping lengths (ΔL3), (ΔL4) of 1 μm, respectively.

As a result, the first and second MIM elements (1
21a), (121b) each upper electrode (151a), (151b), (151
c), (151d) and the lower electrode (131) overlap region (S1),
(S2), (S3), (S4) are the upper electrodes (151a),
(151b), (151c), (151d) electrode width (W1), (W2),
(W3), (W4) and each upper electrode (151a), (151b), (151
c), (151d) overlap length with lower electrode (131) (ΔL
1), (ΔL2), (ΔL3), and (ΔL4), the electrode width (L) of the lower electrode (131) is 6 μm, and each upper electrode (151a), (151b), (151c), (151d) ) Electrode width (W
Despite the fact that 1), (W2), (W3), and (W4) were 4 μm, they could be reduced sufficiently compared with the conventional one.

As a result, the element capacitance (CMIM) of the MIM element (121) can be reduced to about 1/3 of that of the conventional one, and the drive voltage can be reduced by about 3/4 to obtain the same contrast ratio as the conventional one. We were able to. Further, according to this embodiment, each upper electrode (151a), (151b), (151c), (151d)
Area (S1), (S2) between the lower electrode and the lower electrode (131),
Although (S3) and (S4) are sufficiently reduced,
Each upper electrode (151a), (151b), (151
Even if a pattern shift occurs between c), (151d) and the lower electrode (131), their overlapping regions (S1), (S2), (S
3) and (S4) increase / decrease cancel out the variation in the overlapping region, and therefore the element capacitance (CMIM) does not vary within the plane or between lots. In addition, each upper electrode (151a), (151b), (151c), (15) in the direction substantially orthogonal to the data bus (111).
1d) and the lower electrode (131) are misaligned, the upper electrode (151a), (151b), (151c), (151d) end electrode
Since (131) is extended with a sufficient margin, the overlapping areas (S1), (S2), (S3), (S4) do not change.

Next, an active matrix type display device of the fourth embodiment will be described with reference to FIG. Note that M
Since the structure is the same except for the IM element, only the MIM element portion will be described with the same reference numerals attached.

Also in this embodiment, as in the third embodiment, the two-terminal non-linear element is the first and second MIM elements (121
It is composed of a series structure with a) and (121b). First
The MIM element (121a) is connected to each pixel electrode from the data bus (111).
First and second upper electrodes (151a), (151b) formed at the same time as the data bus (111) which is derived in the (191) direction and extends so as to face the data bus (111) direction; The first and second upper electrodes 151a and 151b include a lower electrode 131 in which overlapping regions S1 and S2 that overlap with an insulating film (not shown) are formed.

The second MIM elements (121b) face each other,
A data bus is formed so that one ends thereof are electrically connected to the pixel electrode (191) and overlap regions (S3) and (S4) that overlap with the lower electrode (131) via an insulating film (not shown) are formed. Third and fourth upper electrodes formed simultaneously with (111)
Includes (151c) and (151d).

More specifically, the first and second upper electrodes (1
51a) and (151b) are chromium (Cr) films formed by sputtering to have a thickness of 0.3 μm.
1) and (W2) are patterned to have a thickness of 8 μm, and the third and fourth upper electrodes (151c) and (151d) are simultaneously patterned to have a width (W3) and (W4) of 8 μm. Consists of

The lower electrode (131) is connected to the first upper electrode (1
51a) and the first lower electrode (131a) and the second upper electrode (151b) and the overlapping region which are derived by folding the contour line in the first upper electrode (151a) so as to form the overlapping region (S1). A second lower electrode (131b) and a third upper electrode whose contour lines are folded back and led out in the second upper electrode (151b) so that (S2) is formed.
The third lower electrode (131c) and the fourth upper electrode (151d), which are derived by folding the contour line in the third upper electrode (151c) so as to form an overlapping region (S3) with (151c), overlap with the fourth upper electrode (151d). Area (S4)
And a fourth lower electrode (131d) that is drawn out by folding the contour line in the fourth upper electrode (151d) so that
The tantalum (Ta) film having a shape of 0.3 μm formed by sputtering is patterned by photolithography. Then, the lower electrodes (131a), (13
1b), (131c), (131d) are the upper electrodes (151a), (151b), (151
c), (151d) electrode width (W1), (W2), (W3),
An electrode width (L1) that is sufficiently small with respect to (W4),
It is patterned to 4 μm which is (L2), (L3) and (L4).

The lower electrodes (131a), (131b), (131
c), (131d) and each upper electrode (151a), (151b), (151c), (151d)
Of the overlap lengths (ΔL1) and (ΔL1) of 1 μm.
2), (ΔL3), (ΔL4) are aligned.

As a result, each MIM element (121a), (121b)
Of the upper electrodes (151a), (151b), (151c), (151d) and the lower electrode (131) that compose the above (S1), (S2), (S
3) and (S4) are lower electrodes (131a), (131b), (131c),
Each electrode width (W1), (W2), (W3) of (131d),
(W4) and each lower electrode (131a), (131b), (131c), (131d)
Overlap lengths (ΔL1), (ΔL2), (ΔL3), (ΔL4) for the upper electrodes (151a), (151b), (151c), and (151d) of
It was roughly decided by and it was able to reduce it enough compared with the past.

As a result, each MIM element (121a), (121b)
The device capacitance (CMIM) can be reduced to about 1/4 of the conventional one, and the drive voltage can be reduced to about 3/4 to obtain the same contrast ratio as the conventional one.

Further, according to this embodiment, each upper electrode (1
Although the overlapping areas (S1), (S2), (S3), (S4) of 51a), (151b), (151c), (151d) and the lower electrode (131) are sufficiently reduced, Upper electrodes (151a), (151b), (151c), (151d) and lower electrodes (131) in the direction of the data bus (111)
Even if a pattern shift occurs in and, the variation in the overlapping area is offset by the increase or decrease in the overlapping area, so that the element capacitance (CMIM) does not vary within the plane or between lots. Further, the upper electrodes (151a), (151b), (151c), (151d) and the lower electrodes (13a) are arranged in a direction substantially orthogonal to the data bus (111).
Even if there is a pattern shift between (1) and each of the lower electrodes (131a), (1
31b), (131c), (131d) electrode widths (L1), (L2),
For (L3) and (L4), the upper electrodes (151a), (151b),
(151c), (151d) electrode width (W1), (W2), (W
Since 3) and (W4) have a sufficient margin, their overlapping regions do not change, and the device capacitance (CMIM) does not vary within the plane or between lots.

[0053]

According to the active matrix type display device of the present invention, the element capacitance is sufficiently reduced with respect to the pixel capacitance without increasing the film thickness of the insulating film of the two-terminal nonlinear element used as the switch element, As a result, low power consumption is achieved without deteriorating the device characteristics.

[Brief description of drawings]

FIG. 1 is a partial schematic front view of an array substrate of an active matrix type liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a partial schematic cross-sectional view of the active matrix liquid crystal display device taken along the line AA ′ in FIG.

FIG. 3 is a partial schematic front view of an MIM element part of another embodiment.

FIG. 4 is a partial schematic front view of an MIM element part of another embodiment.

FIG. 5 is a partial schematic front view of an MIM element portion of another embodiment.

FIG. 6 is a partial schematic front view of an MIM element portion of another embodiment.

FIG. 7 is a partial schematic front view of an array substrate of a conventional active matrix type liquid crystal display device.

[Explanation of symbols]

 (1)… Active matrix liquid crystal display device (100)… Array substrate (111)… Data bus (121)… MIM element (300)… Counter substrate

Claims (6)

[Claims] 1. A plurality of data buses arranged on an insulating substrate, a plurality of pixel electrodes arranged along the data buses, and an upper portion arranged so as to overlap each other with a dielectric layer interposed therebetween. A first two-terminal non-linear element including an electrode and a lower electrode for connecting the data bus and the pixel electrode;
An active matrix display device comprising an electrode substrate, a second electrode substrate including a counter electrode facing the pixel electrode, and a light modulation layer sandwiched between the first electrode and the second electrode, The upper electrode includes a first electrode and a second electrode for canceling the variation of the overlapping region, and respective contour lines of the first and second electrodes are folded back in the lower electrode. Active matrix display device. 2. The first electrode substrate according to claim 1, wherein the first electrode substrate includes a second upper electrode disposed on the lower electrode and having a second overlapping region with a second dielectric layer interposed therebetween. Matrix display device. 3. The second upper electrode according to claim 2, further comprising a third electrode and a fourth electrode for canceling the fluctuation of the second overlapping region, and respective contour lines of the third and fourth electrodes are An active matrix display device, which is folded back in the lower electrode. 4. A plurality of data buses arranged on an insulating substrate, a plurality of pixel electrodes arranged along the data buses, and an upper portion having an overlapping region with each other with a dielectric layer interposed therebetween. A first two-terminal non-linear element including an electrode and a lower electrode for connecting the data bus and the pixel electrode;
An active matrix display device comprising an electrode substrate, a second electrode substrate including a counter electrode facing the pixel electrode, and a light modulation layer sandwiched between the first electrode and the second electrode, The lower electrode includes a first electrode and a second electrode for canceling the variation of the overlapping region, and respective contour lines of the first and second electrodes are folded inside the upper electrode. Active matrix display device. 5. The first electrode substrate according to claim 4, wherein the first electrode substrate includes a second lower electrode disposed below the upper electrode and having a second overlapping region with a second dielectric layer interposed therebetween. Matrix display device. 6. The second lower electrode according to claim 5, further comprising a third electrode and a fourth electrode for canceling the fluctuation of the second overlapping region, and the respective contour lines of the third and fourth electrodes are An active matrix type display device characterized by being folded back within the upper electrode.