JPH09218208A - Method for taking out electrode and cantilever for atomic force microscope using the electrode-taking method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently take out an electrode by adopting a second electrode- taking substrate having a minute continuity projection and a wiring pattern connected to the continuity projection. SOLUTION: Projections of silver paste 111-113 are formed on a rectangular float glass substrate 100 by screen printing. The projections 111, 112 among the projections are respectively printed at positions to agree with an upper and a lower electrodes of a cantilever when bonded to the electrodes. Thereafter, Al is formed from the projections 111, 112 by vacuum vapor deposition with the use of a metal mask as electrode-taking electrodes 121, 122 of a piezoelectric body film. The projection 113 is used as a dummy for figuring at the bonding time. Then, Ga-In alloys 131, 132 are screen-printed on the projections 111, 112. After the upper and lower electrodes of the cantilever are registered with the continuity projection parts of a second substrate, the electrodes and the substrate are bonded with the use of an adhesive 140. Accordingly, the cantilever is obtained with a good yield.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for taking out an upper electrode and a lower electrode of a dielectric thin film to the outside, and particularly to an atomic force microscope (AF) equipped with a piezoelectric displacement sensor.
The present invention relates to a method for extracting the upper electrode and the lower electrode of the M) cantilever to the outside.

[0002]

2. Description of the Related Art An outline of a conventional method of extracting an upper electrode and a lower electrode of a dielectric thin film to the outside will be described in the order of steps shown in FIG. (7-1) Lower electrode film 21 serving as ground on the substrate 200
0 is formed, and a dielectric film 220 is formed on the entire surface of the substrate 200. (7-2) An upper electrode 230 is formed on (7-1) and patterned. (7-3) Dielectric film 220
Is etched. (7-4) The insulating film 240 is formed on the entire surface of the substrate 200 by a film forming method such as a low pressure CVD method. (7-
5) The portion of the insulator film 240 that corresponds to the upper electrode 230 is etched. (7-6) Finally, a wiring pattern 250 for extracting a signal related to the dielectric film 220 to the outside.
Is prepared.

As described above, in addition to forming the lower electrode, the dielectric film and the upper electrode on the substrate, etching of the dielectric film,
Fabrication of an insulator film, etching of the insulator film, and fabrication of a wiring pattern. In this way, by patterning a plurality of electronic elements on the substrate and cutting them off into chips, electronic elements can be mass-produced.

[0004]

A conventional method for taking out the upper electrode and the lower electrode of a dielectric thin film is to use a lower electrode,
In addition to film formation of the dielectric film and the upper electrode, a dielectric film etching process, an insulating film manufacturing process, an insulating film etching process, and a wiring pattern manufacturing process are required, and the process cannot be complicated. Further, since the processes are repeated on the same substrate, there is a problem that the yield is lowered. In either case, the production cost will increase.

However, the biggest problem of the conventional method of taking out the upper electrode and the lower electrode of the dielectric thin film to the outside is that this manufacturing method can be applied to any dielectric film and the manufacturing conditions cannot always be established. Is. For example, a lead-based piezoelectric material having a high piezoelectric constant is used as a dielectric film of a cantilever for an AFM with a piezoelectric film displacement sensor. This lead-based piezoelectric film cannot maintain the electrical performance after forming the piezoelectric film by the conventional method of taking out the upper electrode and the lower electrode to the outside, and the predetermined electrical performance deteriorates after the process is completed. It was inevitable.

An object of the present invention is to eliminate the drawbacks of the conventional methods and to provide a method of taking out the upper electrode and the lower electrode of the dielectric film to the outside.

[0007]

Means for Solving the Problems The inventors of the present invention have performed steps other than forming an upper electrode, a dielectric film, and a lower electrode on a substrate, that is, etching after forming a dielectric film, and forming an insulator film. We have earnestly studied post-processes such as fabrication and etching of the insulator film. However, an experiment was repeated many times as to which of these steps caused deterioration of the electrical performance of the dielectric film, but it could not be determined and the problem could not be solved.

Therefore, the inventors of the present invention use a post-process such as an etching process after the dielectric film is formed, an insulating film is formed, and an insulating film is etched in order to take out the signal of the dielectric film to the outside. Focusing on the steps that are performed, do not perform these steps on the same substrate, but form a signal extraction wiring pattern on another substrate so that the electrical performance of the dielectric film does not deteriorate on both substrates. It was thought that the problem could be solved if the device could be made electrically conductive by laminating etc.

[0009]. Therefore, the present invention provides, in a method of extracting the upper electrode and the lower electrode of the dielectric thin film formed on the first substrate member to the outside, minute protrusions on the second substrate and a wiring pattern electrically connected to the protrusions. An electrode lead-out member having the above-mentioned structure is formed, and the upper electrode on the first substrate is brought into contact with or connected to the protruding portion of the electrode lead-out member to take out the electrode from the wiring pattern of the electrode lead-out member. Electrode removal method (claim 1) "
I will provide a.

Further, the present invention is characterized in that "the first substrate is a cantilever for an atomic force microscope with a piezoelectric film displacement sensor, and the dielectric thin film is a piezoelectric thin film formed on the cantilever. An electrode extraction method (claim 2) according to claim 1 is provided. Further, the present invention provides that “a liquid metal is sandwiched at room temperature between the upper electrode on the first substrate and the protruding portion of the electrode extracting member,
The electrode extraction method (claim 3) according to claim 1 or 2, wherein the first substrate and the electrode extraction member are connected.

The present invention also provides that "the upper electrode and the lower electrode of the dielectric thin film are formed on the first substrate member, the wiring pattern of the electrode take-out member is formed on the second substrate member, and the upper electrode and the lower electrode are formed. A metal or conductive paste that is liquid at room temperature is applied to a part of the electrode, and the electrode lead-out member is connected to the metal or conductive paste. There is provided an electrode extraction method (claim 4) characterized in that the electrode is electrically connected to the outside through an extraction electrode.

The present invention is also characterized in that "an adhesive containing glass or resin beads is used to connect the metal or conductive paste which is liquid at room temperature to the electrode lead-out member. An electrode extraction method (claim 5) according to claim 4 is provided. The present invention also provides "the electrode extraction method according to claims 3 to 5 (claim 6), wherein the metal that is liquid at room temperature is a gallium-indium alloy."

The present invention also relates to a "cantilever for an atomic force microscope with a piezoelectric film displacement sensor, which is obtained by taking out an upper electrode and a lower electrode of a dielectric thin film formed on a first substrate member to the outside, on a second substrate. By making an electrode lead-out member on which a minute protrusion and a wiring pattern in conduction with the protrusion are formed, and by contacting or connecting the upper electrode on the first substrate and the protruding portion of the electrode lead-out member,
A cantilever for an atomic force microscope with a piezoelectric film displacement sensor, in which an electrode is taken out from a wiring pattern of an electrode taking-out member (claim 7) "is provided.

Further, the present invention is characterized in that "the first substrate is a cantilever for an atomic force microscope with a piezoelectric film displacement sensor, and the dielectric thin film is a piezoelectric thin film formed on the cantilever. A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 7 is provided. In addition, the present invention is directed to "connecting the first substrate and the electrode lead-out member by sandwiching a liquid metal at room temperature between the upper electrode on the first substrate and the protruding portion of the electrode lead-out member. A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 7 or claim 8 is provided.

The present invention also provides a "first substrate member having an upper electrode and a lower electrode of a dielectric thin film formed thereon, and a metal or liquid formed at a part of the upper electrode and the lower electrode, which is liquid or liquid at room temperature. For an atomic force microscope with a piezoelectric film displacement sensor, comprising a conductive paste and a second substrate member on which a wiring pattern of an electrode lead-out member that is connected to the metal or the conductive paste that is liquid at room temperature is formed. A cantilever (claim 10) ".

The present invention also provides: "A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 10, wherein a cantilever, a piezoelectric film, and the dielectric thin film are sequentially formed on the first substrate member. Claim 11) "is provided. Further, the present invention is characterized in that "an adhesive containing beads made of glass or resin is used for connecting the metal or conductive paste which is liquid at room temperature and the electrode lead-out member. Or a cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 11 (claim 12).
I will provide a.

The present invention also provides: "A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 9 or 12, wherein the metal that is liquid at room temperature is a gallium-indium alloy. )"I will provide a.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION When an upper electrode and a lower electrode of a dielectric thin film are taken out to the outside, an electrode taking-out substrate (second substrate) having a minute conducting protrusion and a wiring pattern conducting to the protrusion is provided. Separately manufactured, the upper electrode and the lower electrode are aligned so that the conductive protrusions of the second substrate come into contact with each other, and the electrical conductivity is guaranteed to adhere and fix the dielectric to the wiring pattern of the second substrate. It is possible to make the upper electrode and the lower electrode of the thin film conductive, and it is possible to eliminate the cause of the conventional method that deteriorates the performance of the dielectric film.

When the upper electrode and the lower electrode are aligned so that the conductive protrusions of the second substrate come into contact with each other and are bonded, the upper electrode and the lower electrode are electrically contacted with the conductive protrusions of the second substrate. It is advisable to sandwich a gallium-indium-based liquid metal between the two in order to guarantee it. Also, when taking out the upper electrode and the lower electrode of the dielectric thin film to the outside,
The wiring pattern of the electrode lead-out member is prepared separately from the electrode lead-out substrate (second substrate), and a part of the upper electrode and the lower electrode is coated with a liquid metal or a conductive paste at room temperature. It is possible to make the upper electrode and the lower electrode of the dielectric thin film conductive to the wiring pattern of the electrode extraction member of the second substrate by aligning so that it contacts with In addition, it is possible to eliminate the cause of the conventional method that deteriorates the performance of the dielectric film.

The metal which is liquid at room temperature is preferably a gallium-indium alloy having good wettability to various materials.
Further, as the conductive paste, a carbon paste or a silver paste that can be processed at a low temperature is preferable. By adopting the present invention, the steps of etching the dielectric film, forming the insulating film, etching the insulating film and the like are completely unnecessary, and by adopting these post-processes, the dielectric film can be formed. It is possible to eliminate the deterioration of the electric performance of.

In the present invention, it is particularly difficult to process the shape of the electronic element, and the process of extracting the upper electrode and the lower electrode of the dielectric film to the outside is limited after the shape of the cantilever or the like is completed, and it is difficult to maintain the electrical performance. This is particularly effective when the upper electrode and the lower electrode of the dielectric film of the cantilever for AFM with the piezoelectric film displacement sensor using the lead-based ferroelectric film are taken out to the outside.

The present invention can be applied not only to taking out the upper electrode and the lower electrode of the dielectric film to the outside but also to taking out the upper electrode and the lower electrode of the resistance metal film and the semiconductor film to the outside. it can. The following examples illustrate the invention in detail.

[0023]

【Example】

[Embodiment 1] FIG. 1 shows an embodiment of a method for extracting upper and lower electrodes of the present invention. Before describing the present invention with reference to FIG. 1, a method for manufacturing a cantilever for an AFM with a piezoelectric film displacement sensor will be described with reference to FIG. still,
The upper view of each process drawing from 2-2 in FIG. 2 to 4-6 in FIG. 4 is a view seen from the upper side, and the lower view is a cross-sectional view seen from the side. However, in 3-3 and 3-4, they are reversed to explain the lower surface.

On a silicon single crystal wafer 10 having a (100) orientation, silicon nitride (Si
₃ N ₄ ) films 20 and 21 are formed to a thickness of 100 nm. The 46 rectangles shown on the wafer 10 indicate the provisional positions where the cantilevers are manufactured from this portion. Finally, the cantilever is cut along the solid line with a dicing saw to obtain chips (2-
1). Hereinafter, a manufacturing method will be described by taking one chip on the wafer 10 as an example.

First, the photoresist 30 is applied to the entire surface of one side of the wafer 10, and the photoresist at the position where the probe is to be produced is removed by photolithography (2-2).
Next, by reactive ion etching (RIE), the portion of the silicon nitride film 20 where there is no photoresist is removed (2
-3). Further, when anisotropic etching of silicon is performed with a potassium hydroxide (KOH) solution, the etching proceeds from a portion without the silicon nitride film 20 serving as a protective film against the etching to form the pit 11. Then, the photoresist 30 is peeled off (3-1). A silicon nitride (Si ₃ N ₄ ) film 22 serving as a probe is formed in the pit 11 by a CVD method to a film thickness of 400 nm (3-2).

Next, a photoresist 31 for back etching is applied to the entire surface of the silicon nitride film 21 also on the back surface of the wafer, and the photoresist in the portion which becomes a void necessary for forming the cantilever is photo-resisted. Remove by lithography (3-3). Similarly, the silicon nitride film 21 having a predetermined shape on the back surface is removed by the RIE method (3-4). further,
The back surface of silicon is anisotropically etched with a KOH aqueous solution. After that, the photoresist 31 is peeled off (3-
5).

Returning again to the step of producing the upper surface of the wafer, the photoresist 32 is applied to the upper surface of the wafer and the pattern of the lever portion is produced by photolithography (3-).
6). Next, the silicon nitride film having a predetermined shape on the upper surface is removed by the RIE method (4-1). Further, anisotropic etching of silicon is performed with a KOH aqueous solution to manufacture a lever portion (4-2).

Up to this point, the process of forming the cantilever shape has been completed. The steps of forming the upper electrode, the lower electrode, and the piezoelectric film will be described below in order. A tantalum (Ta) film 41 of 10 nm and platinum (P) is formed on the entire surface of the wafer by a sputtering method.
t) A film 42 having a thickness of 200 nm and a lead zirconate titanate (PZT) film 43 having a film thickness of 0.8 μm are formed as piezoelectric films. The Pt film serves as a lower electrode, and the Ta film serves to improve the adhesion between the Pt film and the silicon nitride film, and to prevent the diffusion of atoms during the annealing treatment in the next step (4-4) ( 4-3). Next, in order to bring out the piezoelectric characteristics of the PZT film, annealing treatment (650 ° C., 30 minutes) is performed (4
-4). In order to take out the lower electrode to the outside, a part of the surface is scratched with a diamond pen to expose the lower electrode (4-5). A at the two locations of the lower electrode and lever in the previous process
1 is mask-deposited to form upper electrode and lower electrode electrodes 50 and 51, respectively (4-6).

Now, returning to FIG. 1, the method for producing the second substrate for electrode extraction of the present invention and the above-described cantilever, that is, the connection between the first substrate and the second substrate will be described. still,
The top view of each process diagram in FIG. 1 is a top view, and the bottom view is a side cross-sectional view. Rectangular float glass substrate 10
Three silver paste protrusions 111, 112, 113 are formed on the surface 0 by screen printing. 2 of these 11
Screens 1 and 112 are screen-printed at positions that coincide with the upper electrode and the lower electrode of the cantilever (1-1). Next, aluminum (Al) is produced from the two places 111 and 112 as electrodes 121 and 122 for taking out electrodes of the piezoelectric film by a vacuum evaporation method using a metal mask. The remaining one projection is used as a dummy for surfacing at the time of laminating (1-2). afterwards,
Ga-In alloy 13 is formed on the first two conductive projections.
1 and 132 are screen printed. This process is possible because this alloy is a liquid. Further, this alloy can ensure electrical conduction between the upper electrode and the lower electrode of the cantilever and the electrode for taking out the electrode on the second substrate when laminated with the cantilever (1-3).

Finally, after aligning the upper and lower electrodes of the cantilever with the conductive projections of the second substrate, the adhesive 1
Laminate with 40. In the figure, a rectangular cantilever chip is cut from a silicon single crystal wafer with a dicing saw, and the cantilever with the outer frame for tip protection already removed is used, but it is of course possible to use a cantilever with an outer frame. . In that case, after connection, the protective outer frame may be removed (1-4).

By the above manufacturing method, a cantilever for AFM with a piezoelectric film displacement sensor can be obtained with good yield,
The upper electrode and the lower electrode can be taken out without deteriorating the electrical performance of the PZT film. [Embodiment 2] FIG. 5 shows an example of a method of manufacturing a second substrate for extracting electrodes of a cantilever for an AFM with a piezoelectric film displacement sensor, which is different from that of the first substrate. However, the cantilever is the same as that manufactured in Example 1.

A Cr film 160 is formed on one surface of the glass substrate 150.
To a thickness of 50 nm by vacuum deposition (5-
1). Next, protrusions are formed with a photoresist pattern at three positions similar to those in Example 1 (5-2). The Cr film other than the photoresist is removed with an acid, and the protrusions 171 and 17 are formed.
2, 173 is prepared (5-3). Similar to the first embodiment, aluminum electrodes 181 and 182 for extracting the electrodes of the piezoelectric film are produced from two locations 171 and 172 of them by mask vapor deposition (5-4). The second substrate is manufactured as described above. This is bonded with an epoxy adhesive 190 so that the conducting projections are aligned with the upper and lower electrodes of the cantilever.

[Embodiment 3] Chromium 100 nm and gold 100 nm are sequentially pattern-deposited on one surface of a glass substrate 300 by a vacuum evaporation method using a metal tar mask to produce an upper electrode extraction electrode 301 and a lower electrode extraction electrode 302. (8-1). On the other hand, the lower electrode 310 and the upper electrode 3 of the cantilever manufactured by the same manufacturing method as in Example 1.
Ga-In alloys 312 and 313 are applied to 11 by a dispenser (8-2). Upper electrode extraction electrode 301
And the lower electrode extraction electrode 302 and the Ga-In alloy 3
After positioning 12 and 313, they are connected, and the cantilever and the glass substrate are bonded with an epoxy adhesive 320 containing nylon beads of φ8 μm (8-3).

Since the beads made of nylon are located between the cantilever and the glass substrate, the spacing is kept at 8 μm and the Ga—In alloys 312 and 31 applied to the upper and lower electrodes are coated.
3 will not be unfolded more than necessary. Since this method does not have the step of forming the protrusion as in the methods of Embodiments 1 and 2, the cost can be further reduced.

According to the above embodiment, the electrode of the cantilever with a piezoelectric film can be taken out to the outside according to the present invention.
Further, when the electrode is taken out from the electrode thus manufactured on the second substrate, the piezoelectric film is not deteriorated by the conventional electrode taking-out method, and the excellent piezoelectric film displacement sensor-equipped A
A cantilever for FM can be provided. In addition, in this example, a metal mask was used as a method for producing an electrode for taking out the electrode of the piezoelectric film. However, it is needless to say that the method for producing the electrode is not limited to this method, and ordinary lithography may be used, and the method for exposing the lower electrode of the first substrate by scratching also uses lithography. It goes without saying that you can expose it.

[0036]

As described above, according to the present invention, when the signals of the upper electrode and the lower electrode of the piezoelectric film are taken out to the outside, there are minute conductive projections and wiring patterns which are conductive with them. By adopting the electrode taking-out substrate of No. 2, it is possible to eliminate the deterioration of the electric performance of the conventional dielectric film, which cannot be avoided by carrying out the steps after the film formation. The present invention is an AF with a piezoelectric film displacement sensor.
This is particularly effective when extracting the piezoelectric signal of the M cantilever. Further, the manufacturing process after forming the dielectric film is not required in the conventional manufacturing process of the electronic element, and the cost can be reduced. Furthermore, the present invention does not depend on the material of the dielectric film, and it is possible to take out the electrode from the dielectric film in the same process,
If only the second substrate is prepared, the electrodes can be efficiently taken out regardless of the dielectric material.

[Brief description of drawings]

FIG. 1 is a diagram showing a manufacturing process of an electrode extracting substrate and a method of extracting an electrode of a piezoelectric film to the outside of Example 1 according to the present invention.

FIG. 2

FIG. 3

FIG. 4 is a diagram showing a manufacturing process of a cantilever used in Example 1.

5A to 5D are diagrams showing a manufacturing process of a cantilever used in Example 2.

FIG. 6 is a diagram showing a manufacturing process of an electrode extraction substrate and a method of extracting electrodes of a piezoelectric film to the outside according to Example 2 of the present invention.

FIG. 7 is a diagram showing a conventional method for extracting an electrode from a dielectric film.

FIG. 8 is a diagram showing a manufacturing process of an electrode extracting substrate and a method of extracting electrodes of a piezoelectric film to the outside according to Example 3 of the present invention.

[Explanation of symbols]

10 silicon single crystal wafer 20, 21, 22 silicon nitride film 30, 31, 32 photoresist 41 tantalum film 42 platinum film 43 PZT film 50, 230 upper electrode 51, 210 lower electrode 100, 150, 300 glass substrate 111, 112, 113 Protrusions 171, 172, 173 Produced with Silver Paste 121, 122, 181, 182 Electrodes 131, 132, 312, 313 Gallium-Indium Alloy 140, 190 Adhesive 160 Chrome Layer 200 Substrate 220 Dielectric Film 240 Insulator film 250 Wiring pattern for extracting the dielectric film electrode to the outside 301 Upper electrode extraction electrode 302 Lower electrode extraction electrode 310 Lower electrode 311 Upper electrode 320 φ8 μm nylon beads epoxy adhesive

Claims (13)

[Claims] 1. A method of extracting an upper electrode and a lower electrode of a dielectric thin film formed on a first substrate member to the outside, wherein minute projections and a wiring pattern electrically connected to the projections are formed on a second substrate. An electrode taking out the electrode from the wiring pattern of the electrode taking-out member by contacting or connecting the upper electrode on the first substrate and the protruding portion of the electrode taking-out member with each other. How to take out. 2. The first substrate is a cantilever for an atomic force microscope with a piezoelectric film displacement sensor, and the dielectric thin film is a piezoelectric thin film formed on the cantilever. How to take out electrodes. 3. The first substrate and the electrode lead-out member are connected by sandwiching a liquid metal at room temperature between the upper electrode on the first substrate and the protruding portion of the electrode lead-out member. The electrode extraction method according to claim 1 or 2. 4. An upper electrode and a lower electrode of a dielectric thin film are formed on a first substrate member, a wiring pattern of an electrode lead-out member is formed on a second substrate member, and a part of the upper electrode and the lower electrode is formed. A metal or conductive paste that is liquid at room temperature, and connects it to the electrode lead-out member, whereby the upper electrode and the lower electrode are connected through the metal or conductive paste that is liquid at room temperature and the lead-out electrode. An electrode extraction method characterized by electrically connecting to the outside. 5. An adhesive containing beads made of glass or resin is used to connect the metal or conductive paste liquid at room temperature to the electrode lead-out member. How to take out electrodes. 6. The electrode extraction method according to claim 3, wherein the metal that is liquid at room temperature is a gallium-indium alloy. 7. A cantilever for an atomic force microscope with a piezoelectric film displacement sensor, which is obtained by taking out an upper electrode and a lower electrode of a dielectric thin film formed on a first substrate member to an outside, and a minute protrusion on a second substrate. A wiring pattern of an electrode lead-out member is produced by producing an electrode lead-out member having a wiring pattern in conduction with the protrusion and contacting or connecting the upper electrode on the first substrate and the protruding portion of the electrode lead-out member. A cantilever for atomic force microscopy with a piezoelectric film displacement sensor, which is obtained by taking out the electrode. 8. The method according to claim 7, wherein the first substrate is a cantilever for an atomic force microscope with a piezoelectric film displacement sensor, and the dielectric thin film is a piezoelectric thin film formed on the cantilever. Cantilever for atomic force microscope with piezoelectric film displacement sensor. 9. The first substrate and the electrode lead-out member are connected by sandwiching a liquid metal at room temperature between the upper electrode on the first substrate and the protruding portion of the electrode lead-out member. 9. A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 7 or 8. 10. A first substrate member having an upper electrode and a lower electrode of a dielectric thin film formed thereon, and a metal or a conductive paste which is formed on a part of the upper electrode and the lower electrode and is liquid and liquid at room temperature, A cantilever for an atomic force microscope with a piezoelectric film displacement sensor, comprising a second substrate member on which a wiring pattern of an electrode lead-out member connected to the liquid metal or conductive paste at room temperature is formed. 11. A cantilever on the first substrate member,
The cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to claim 10, wherein a piezoelectric film and the dielectric thin film are sequentially formed. 12. An adhesive containing beads made of glass or resin is used to connect the metal or conductive paste liquid at room temperature to the electrode lead-out member. A cantilever for an atomic force microscope with the piezoelectric film displacement sensor described. 13. The metal which is liquid at room temperature is a gallium-indium-based alloy.
A cantilever for an atomic force microscope with a piezoelectric film displacement sensor according to 2.