JPH09213625A - Coating processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable improving maintenance performance of coating liquid and forming coating films different in thikness of a large caliber object to be treated. SOLUTION: A resist liquid supply nozzle 23 supplying resist liquid A to the surface of a semiconductor wafer W which is rotated and held by a spin chuck 22, and a resist tank 25 as a resist liquid supply source are connected by using a supply tube path 24. A high viscosity adjustment equipment 26 as a viscosity adjustment means for adjusting the viscosity of the resist liquid A is interposed in the supply tube path. Then the resist liquid A can be adjusted to be a specified viscosity by the high viscosity adjustment equipment 26 and is supplied to the surface of the semiconductor wafer W. The coating film thickness can be made a specified value.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating processing apparatus.

[0002]

2. Description of the Related Art In a manufacturing process of a semiconductor device, a coating liquid such as a photoresist liquid is applied to a semiconductor wafer such as a silicon substrate (hereinafter referred to as a wafer) to form a photoresist film, and a photolithography technique is used. There is a series of processing steps in which the circuit pattern or the like is reduced to expose the photoresist film, and this is developed.

In this processing step, as a method of forming a resist film on the surface of the wafer, for example, a resist solution is dropped on the surface of the wafer held by a spin chuck so as to be horizontally rotatable, and the wafer is rotated to thereby form a wafer surface. A spin coating method is known in which a resist solution is applied to the. According to this coating method, when a resist solution having a predetermined viscosity is used, the film thickness of the resist film can be changed by changing the rotation speed of the wafer. That is, the film thickness can be reduced by rotating the wafer at a high speed, and can be increased by rotating the wafer at a low speed.

By the way, as semiconductor devices have been highly integrated in recent years, the conventional 6-inch wafer tends to have a larger diameter from an 8-inch wafer to a 12-inch wafer, and even with such a large-diameter wafer. The coating treatment method is adopted.

[0005]

However, when the wafer is rotated at a high speed as the diameter of the wafer increases, turbulence is generated above the peripheral edge of the wafer, which causes unevenness in the resist film on the peripheral edge of the wafer. is there. Therefore, when forming a resist film on a large-diameter wafer, it is necessary to use a resist solution having a low viscosity. Further, when forming resist films having different film thicknesses, it is necessary to prepare a plurality of types of resist liquids having different viscosities, replace the resist liquids each time, and perform the coating process. Therefore, in such a method of performing coating treatment by exchanging different types of viscosities, there are problems that the production capacity is reduced, the maintenance of the resist solution is troublesome, and a storage space must be secured. It was

The present invention has been made in view of the above circumstances, and an object thereof is to provide a coating treatment apparatus capable of forming coating films of different kinds of film thickness by adjusting the viscosity of one kind of coating liquid. It is what

[0007]

In order to achieve the above object, the coating treatment apparatus of the present invention comprises a holding means for rotatably holding an object to be treated and a coating solution to the surface of the object to be treated. Assuming a coating processing apparatus having a coating liquid supply means and a coating liquid supply source for supplying the coating liquid to the coating liquid supply means, a coating liquid supply pipe connecting the coating liquid supply means and the coating liquid supply source to each other. The passage is provided with a viscosity adjusting means for adjusting the viscosity of the coating liquid (claim 1).

In the present invention, the viscosity adjusting means adjusts the viscosity of the coating liquid to an arbitrary viscosity. For example, as the viscosity adjusting means, is a high viscosity adjusting device for reducing the solvent of the coating liquid used? ), Or a low-viscosity adjusting device (claim 3) for replenishing the coating liquid with a solvent for the coating liquid can be used, and these high-viscosity adjusting device and low-viscosity adjusting device are provided for selective use. What is possible (claim 4) can be used.

As a high-viscosity adjusting device for reducing the solvent of the coating liquid, for example, by making a negative pressure in a closed container containing a tubular member having a function of separating the solvent in the coating liquid flowing therein. A method using negative pressure means for separating the solvent in the coating liquid flowing through the tubular member from the tubular member to reduce the solvent in the coating liquid (claim 5), or ultrasonic wave generation in place of the negative pressure means It is possible to use a means that uses a means or a means that evaporates the solvent in the coating solution by using a heating means (claims 6 and 7).

According to the coating treatment apparatus of the present invention, the coating liquid supply conduit connecting the coating liquid supply means and the coating liquid supply source is provided with the viscosity adjusting means for adjusting the viscosity of the coating liquid, so that one type It is possible to form coating films of different thicknesses by adjusting the viscosity of the coating liquid. Therefore, even when a coating film is formed on a large-diameter object to be processed, the object to be processed can be rotated at a low speed to supply the coating liquid to form a coating film having a uniform film thickness.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In this embodiment, the processing apparatus of the present invention is used to apply a resist solution to a semiconductor wafer.
The case of application to the development processing system will be described.

The resist solution coating / developing system stores a wafer cassette 1a for storing a plurality of unprocessed semiconductor wafers W (hereinafter referred to as wafers), for example, 25 wafers, and a plurality of processed wafers W, for example, 25 wafers. A cassette station 10 having a wafer cassette 1b, a coating processing section 20 having a coating processing apparatus of the present invention for coating a coating liquid such as a resist solution on a wafer W, and a wafer W exposed by an exposure device (not shown) are developed. Development processing unit 30 including a developing device for processing, and coating processing unit 2
0 and the main wafer transfer mechanism 40 and the auxiliary wafer transfer mechanism 40A that transfer the wafer W in the development processing section 30 constitute a main part.

The cassette station 10 is provided with a wafer transfer tweezers 2 for loading / unloading the wafer W into / from the unprocessed or processed wafer cassettes 1a and 1b and a wafer delivery table 3. The wafer transfer tweezers 2 are formed so as to be movable in horizontal X and Y directions and rotatable in θ directions, and also movable in a vertical (Z) direction, and are not processed in the wafer cassette 1a. Wafer W from the cassette 1a and transferred to the delivery mounting table 3, and the processed wafer W processed in each of the processing units 20 and 30 is received from the delivery mounting table 3 to receive the wafer cassette 1b. It is configured to be transported to.

A transport path 41 is provided in the coating processing section 20 along the longitudinal direction of the central portion.
A main wafer transfer mechanism 40 is slidably attached to the No. 1 unit. The main wafer transfer mechanism 40 is formed so as to be rotatable in a direction (X direction) and θ direction orthogonal to the transfer direction (Y direction) and movable in a vertical direction (Z direction). For example, the transfer arm 42 is vertically
I have one.

Two resist coating devices 21, which are the coating processing devices of the present invention, are arranged in parallel on one side facing the conveying path 41, and the first and second resist coating devices 21 are arranged on the other side. A processing section 50 including two sets of processing unit groups G1 and G2 and an auxiliary wafer transfer mechanism 40A for loading and unloading the wafer W to and from each processing unit of the processing unit groups G1 and G2 is provided. Auxiliary wafer transfer mechanism 40A
Like the main wafer transfer mechanism 40, is equipped with, for example, two upper and lower auxiliary wafer transfer arms 42A that are movable in the directions (rotational directions) in the X, Y, Z directions and θ.

Of the processing unit groups G1 and G2, the first processing unit group G1 is formed by stacking an extension unit (EXT), two baking units (HP) and an adhesion unit (AD) in order from the bottom. It is provided. In this case, the extension unit (EXT) is connected to the transfer path 41 side and the auxiliary wafer transfer mechanism 4
Doors 51a and 51b are provided at two locations on the 0A side, and the wafer W is transferred via these doors 51a and 51b. In the second processing unit group G2, two cooling units (COL) and two baking units (HP) are stacked in order from the bottom. The arrangement position of each processing unit does not necessarily have to be the arrangement position described above, and the arrangement can be changed appropriately.

On the other hand, the developing processing section 30 is provided with an extending conveying path 41 disposed in the coating processing section 20, and two units are provided on one side of the conveying path 41. The developing devices 31 are arranged in parallel, and the third side is provided with the third device.
And the fourth two sets of processing unit groups G3 and G4, and the X, Y, and Z directions for loading and unloading the wafer W into and from the processing units of the processing unit groups G1 and G2 (rotational direction). A second processing unit 50A having a movable auxiliary wafer transfer mechanism 40A is provided. Of the processing unit groups G3 and G4, the third processing unit group G3 is provided by stacking an extension unit (EXT) and three hot baking units (HP) in order from the bottom. The fourth processing unit group G4 is provided by stacking two cooling units (COL) and two baking units (HP) in order from the bottom. In this case, the extension unit (EXT) of the third processing unit group G3 has the same structure as that of the extension unit (EXT) of the first processing unit group G1. Gates 51a and 51b are provided at the locations, and the wafer W is transferred via the gates 51a and 51b. The arrangement position of each processing unit does not necessarily have to be the arrangement position described above, and the arrangement can be changed appropriately.

Next, the structure and operation of the resist coating device 21 of the present invention will be described. As shown in FIG. 2, the resist coating device 21 has a holding means, for example, a spin chuck 22 for holding the wafer W rotatably in the horizontal direction.
Then, the coating liquid, for example, the resist liquid A is dropped (supplied) to the central portion of the surface of the wafer W held by the spin chuck 22.
A resist solution supply nozzle 23 (coating solution supply means),
A resist tank 25 containing a resist solution A as a coating solution supply source connected to the resist solution supply nozzle 23 via a resist solution supply line 24 is provided. A viscosity adjusting means for adjusting the viscosity, for example, a high viscosity adjusting device 26 is provided. A temperature adjusting mechanism 27 is provided outside the supply conduit 24 on the resist solution supply nozzle 23 side, and the temperature of the resist solution A supplied from the resist solution supply nozzle 23 can be set to a predetermined temperature, for example, 23 ° C. Is configured.

The spin chuck 22 is formed so as to be rotatable and vertically movable by a driving portion 22a.
Further, it is connected to a vacuum pump (not shown) so that the wafer W can be sucked and held. The outer side and the lower part of the spin chuck 22 are surrounded by a cup 28, and the exhaust and drainage are discharged from an exhaust port 28a and a drainage port 28b provided at the bottom of the cup 28. There is.

A valve 29a, a pump 29b and a filter 29c are provided in this order from the resist tank side between the high viscosity adjusting device 26 and the resist tank 25 of the supply pipeline 24, and the high viscosity adjusting device 26 and the resist solution are provided. An air operation valve 29d is provided between the supply nozzle 23 and the supply nozzle 23. Further, the high-viscosity adjusting device 26 is a control means for outputting a predetermined viscosity signal based on an output signal (viscosity) detected by the viscosity detection sensor 61 of the resist liquid A stored in the resist tank 25, for example, a central processing unit. The viscosity of the resist solution supplied to the wafer W can be set to a predetermined value based on a signal from the device 60 (CPU).

In this case, the high-viscosity adjusting device 26 has an inlet 71 for introducing the resist solution A, for example, as shown in FIG.
And a closed container 70 having a delivery port 72 for delivering the resist solution A, and a plurality of pipe members 73 extending from the introduction port 71 to the delivery port 72 in the closed container 70. The tube member 73 is formed of a material having a function of separating the solvent in the resist solution A flowing therein, such as thinner, from the resist solution and separating the solvent, for example, a porous fluororesin. The amount of the resist liquid A flowing through the pipe members 73 is, for example, one discharge amount (eg, 3 to 3) supplied from the resist liquid supply nozzle 23 toward the wafer W.
4 cc), which is about 3 to 4 times (for example, 10 to 15 cc), and the high viscosity adjusting device 26 constantly stocks the resist solution A for a plurality of times. The pipe member 7
3 is more preferable as it is thinner and has a larger number.

Further, an exhaust pipe 74 is connected to the closed container 70, and a vacuum pump 76 is provided in the exhaust pipe 74 via a trap tank 75. The solvent (thinner) in the resist solution A flowing through the pipe member 73 toward the delivery port 72 can be discharged to the outside of the pipe member 73 to reduce the thinner in the resist solution A.

Therefore, for example, the viscosity of the resist solution A contained in the resist tank 25 is set to 5 centipoise (c).
p), and the vacuum pump 76 of the high viscosity adjusting device 26.
Is driven at a predetermined vacuum pressure for a predetermined time to reduce the thinner in the resist solution A, so that the viscosity of the resist solution A supplied to the wafer W is 10 cp or 15 cp, for example.
The viscosity can be appropriately set such as cp. Further, by setting the viscosity of the resist solution A to be high, it is possible to obtain an effect that a resist film having a constant film thickness can be formed by rotating at low speed even in a large-diameter wafer. In this way, by changing the viscosity of the resist solution A supplied to the surface of the wafer W, the resist film thickness of the wafer W rotating at a constant rotation speed is set to a predetermined value, for example, 1.0 μm or 1. It can be changed to 2 μm or the like. The thinner discharged from the pipe member 73 flows into the trap tank 75 and is discharged to the outside through the drain port 77.

The high-viscosity adjusting device 26 is not limited to the one having the above-mentioned structure. For example, as shown in FIG. 4, the closed container 70A having the inlet 71 and the outlet 72 is watertight and flexible. In addition to providing the partition wall 78 having the same, the ultrasonic wave generation element 80 (ultrasonic wave generation means) is arranged in contact with the partition wall 78, and the inside of the hermetically sealed container 70 is caused by fine vibration from the ultrasonic wave generation element 80 driven by the high frequency power supply 81. The resist solution A may be vibrated to evaporate the thinner in the resist solution A. In this case, an N2 gas supply pipe 82 connected to an inert gas (not shown) such as an N2 gas supply source is connected to the upper surface of the hermetically sealed container 70A, and a discharge pipe 83 is provided, so that the N2 gas supply pipe 8
The thinner evaporated from the resist solution A by the N 2 gas supplied into the closed container 70 from 2 can be discharged from the closed container 70A through the discharge feeling 83.

In place of the closed container 70A having the partition wall 78, an ultrasonic wave generating element 80 is provided in contact with the bottom surface of the closed container 70B formed of a semipermeable membrane as shown in FIG. May be.

Further, instead of the ultrasonic wave generating element 80,
As shown in FIG. 6, the resist liquid inlet 71 and outlet 7
A heating means, for example, a heater 90 is disposed adjacent to the bottom surface of the container 70C having 2 and the resist liquid A in the container 70C is heated by the heating heater 90.
The thinner inside may be evaporated. In this case, it is preferable that the container 70C is a closed container, but when it is a closed container, it is necessary to provide an exhaust port 91 for discharging evaporated thinner on the upper surface of the container 70C.

Although the resist solution A is heated by the heater 90, it is adjusted to a predetermined temperature, for example, 23 ° C. by the temperature adjusting mechanism 27 in the process of reaching the resist solution supply nozzle 23. It will not cause any problems.

In the above embodiment, the case where the viscosity adjusting means is formed by the high viscosity adjusting device 26 has been described.
Instead of the high viscosity adjusting device 26, the low viscosity adjusting device 100
As shown in FIG. 7, by interposing in the supply line 24,
The relatively high-viscosity resist liquid A contained in the resist tank 25 may be diluted by the low-viscosity adjusting device 100 to supply the resist liquid A having a predetermined viscosity from the nozzle 23. In this case, as shown in FIG. 7, for example, the low-viscosity adjusting device 100 connects the thinner accommodating tank 103 to the upper part of the adjusting tank 101 provided in the supply pipeline 24 via the adjusting valve 102, and Similar to the embodiment, the CPU 60 that operates based on the detection signal of the viscosity detection sensor 61
The viscosity of the resist liquid A can be adjusted by operating the adjustment valve 102 in response to the signal from the control valve 102 to supply thinner into the adjustment tank 101.

With this configuration, for example, when the resist solution A having a viscosity of 15 cp is stored in the resist tank 25 and the resist solution A having a lower viscosity than the resist solution A is supplied, a low viscosity adjusting device is used. The resist liquid A having a predetermined viscosity can be obtained by operating 100 to supply thinner to the resist liquid A stored in the container 70C by flowing through the supply conduit 24.

In the second embodiment shown in FIG. 7,
Since other parts are the same as those in the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.

By combining the viscosity adjusting means of the first and second embodiments, that is, the high viscosity adjusting device 26 and the low viscosity adjusting device 100, the viscosity of the resist solution A can be adjusted over a wider range. can do. That is, as shown in FIG. 8, the high-viscosity adjusting device 26 and the low-viscosity adjusting device 100 are arranged in parallel in the supply pipe 24 via the switching valve 110, and actuated based on the detection signal from the viscosity detection sensor 61. In response to a signal from the CPU 60, the switching valve 110 is switched, and
The resist solution A can be set to a predetermined viscosity by selectively operating the high viscosity adjusting device 26 and the low viscosity adjusting device 100. For example, a viscosity of 10 cp in the resist tank 25
When the resist solution A is stored and the resist solution A having a viscosity higher than that of the resist solution A is supplied, the switching valve 110 is switched to the high viscosity adjusting device 26 side, and the high viscosity adjusting device 26 is operated. By operating it and reducing the thinner in the resist solution, a resist solution having a predetermined viscosity can be obtained. On the contrary, the resist tank 2
When the resist solution A having a viscosity lower than that of the resist solution A in 5 is supplied, the switching valve 110 is switched to the low viscosity adjusting apparatus 100 side, and the low viscosity adjusting apparatus 100 is operated to allow the resist solution A to enter the resist solution. By supplying thinner, a resist solution having a predetermined viscosity can be obtained.

Since the other parts of the third embodiment are the same as those of the first and second embodiments, the same parts are designated by the same reference numerals and the description thereof will be omitted.

Next, in the above processing system, the wafer W is
The wafer transfer operation when receiving a series of processes will be described. First, in the cassette station 10, the wafer transfer tweezers 2 accesses the cassette 1a containing the unprocessed wafer W and takes out one wafer W from the cassette 1a. When the wafer W is taken out from the cassette 1 a, the wafer transfer tweezers 2 moves to the delivery table 3 and the wafer W is placed on the delivery table 3.
Put. The wafer W undergoes orientation flat alignment and centering on the delivery table 3. Then, the wafer transfer arm 42 of the main wafer transfer mechanism 40 accesses the delivery table 3 from the opposite side, and the wafer W is transferred from the delivery table 3 to the wafer W.
Receive.

In the first processing section 50, the main wafer transfer mechanism 40 transfers the wafer W to the entrance / exit 51a of the extension unit (EXT) belonging to the first processing unit group G1.
Then, it is carried into a mounting table (not shown). Then, as shown in FIG. 9, the auxiliary wafer transfer mechanism 40 of the first processing unit 50.
The wafer transfer arm 42A of A accesses the other entrance / exit 51b of the extension unit (EXT) to receive the wafer W in the extension unit (EXT), and then to the adhesion unit (AD) belonging to the first processing unit group G1. Bring in. The wafer W is subjected to an adhesion process in this adhesion unit (AD). Upon completion of the adhesion process, the auxiliary wafer transfer mechanism 40A transfers the wafer W to the adhesion unit (A
D) is carried out and carried into the cooling unit (COL) belonging to the second processing unit group G2. In this cooling unit (COL), the wafer W is cooled to a set temperature before the resist coating process, for example, 23 ° C. When the cooling process is completed, the auxiliary wafer transfer mechanism 40A causes the wafer transfer arm 42 to move the wafer W to the cooling unit (C).
OL) and then to the extension unit (EXT) belonging to the first processing unit group G1.

The wafer W loaded into the extension unit (EXT) is unloaded by the wafer transfer arm 42 of the main wafer transfer mechanism 40, and the resist coating unit 21 is loaded.
It is carried into. In this resist coating device 21, the resist liquid A having a predetermined viscosity adjusted by the above-mentioned viscosity adjusting means on the surface of the wafer W is supplied to the resist liquid supply nozzle 23.
And a resist film having a uniform film thickness is formed on the wafer surface by the spin coating method.

When the resist coating process is completed, the main wafer transfer mechanism 40 carries the wafer W out of the resist coating apparatus 21 and again into the extension unit (EXT) belonging to the first processing unit group G1. Thereafter, the wafer W is received by the auxiliary wafer transfer mechanism 40A,
Is loaded into the baking unit (HP) belonging to the second processing unit group G1 or G2. The wafer W is placed on a heating plate (not shown) in the baking unit (HP) and heated at a predetermined temperature, for example, 100 ° C. for a predetermined time. As a result, the residual solvent is evaporated and removed from the coating film on the wafer W. When the pre-baking is completed, the auxiliary wafer transfer mechanism 40A carries the wafer W out of the baking unit (HP), and then the second processing unit group G.
It is transported to the cooling unit (COL) belonging to 2.
In this cooling unit (COL), the wafer W is cooled to a temperature suitable for the next step, that is, a peripheral exposure process in a peripheral exposure apparatus (not shown), for example, 24 ° C. After this cooling, the auxiliary wafer transfer mechanism 40A transfers the wafer W to the extension unit (EXT) and places the wafer on a mounting table (not shown) in the extension unit (EXT). When the wafer W is mounted on the mounting table of the extension unit (EXT), the wafer transfer arm 42 of the main wafer transfer mechanism 40 accesses from another entrance side to receive the wafer W. Then, the wafer transfer arm 42 transfers the wafer W to the
It is carried into the peripheral exposure device in the face portion. Here, the wafer W is exposed to the edge portion. When the peripheral exposure is completed, the wafer transfer arm 42 carries the wafer W out of the peripheral exposure apparatus and transfers it to the adjacent wafer receiving stand (not shown) on the exposure apparatus side (not shown).

When the wafer W is returned to the wafer receiving table on the exposure apparatus side after the entire surface is exposed by the exposure apparatus, the wafer transfer arm 42 of the main wafer transfer mechanism 40 accesses the wafer receiving table and receives the wafer W. The received wafer W is carried into the developing device 31. In the developing device 31, the wafer W is placed on a spin chuck (not shown), and the developing solution is evenly applied to the resist on the wafer surface by, for example, a spray method. When the development is completed, a rinse liquid is applied to the surface of the wafer to wash off the developer.

When the developing process is completed, the main wafer transfer mechanism 40 carries the wafer W out of the developing device 31 and into the entrance 51a of the extension unit (EXT) belonging to the third processing unit group G3, and places it on the mounting table. Place on top. Then, the auxiliary wafer transfer mechanism 40A of the second processing unit 50A accesses another entrance 51b of the extension unit (EXT) to receive the wafer W in the extension unit (EXT), and the third or fourth processing unit group Baking unit belonging to G3 and G4 (H
P). The wafer W is heated in the baking unit (HP) at 100 ° C. for a predetermined time, for example. Thereby, the resist swollen by the development is hardened, and the chemical resistance is improved.

When the baking is completed, the auxiliary wafer transfer mechanism 40A transfers the wafer W to the baking unit (HP).
The cooling unit (CO
L). Here, after the wafer W has returned to room temperature, the auxiliary wafer transfer mechanism 40A then moves the wafer W to the extension unit (E) belonging to the third processing unit group G3.
XT) and mount it on the mounting table from the entrance 51b. When the wafer W is mounted on the mounting table of the extension unit (EXT), the wafer transfer arm 42 of the main wafer transfer mechanism 40 accesses from the entrance 51a side to receive the wafer W. Then, the wafer transfer arm 4
2 receives the received wafer W from the cassette station 10
The sheet is conveyed to the delivery table 3 for delivery. Then, the wafer transfer tweezers 2 of the cassette station 10 accesses to receive the wafer W, and the wafer W is put into a predetermined wafer accommodation groove of the processed wafer accommodation cassette 1b to complete the processing.

The access time is shortened by sharing the wafer transfer between the main wafer transfer mechanism 40 and the auxiliary wafer transfer mechanism 40A as described above. As a result, the processing time of the entire process is significantly shortened and the throughput is greatly improved. Further, since the inlets / outlets 51a and 51b of the extension unit (EXT) are separately provided on the main wafer transfer mechanism 40 side and the auxiliary wafer transfer mechanism 40A side, the processing unit 5
It is possible to prevent particles generated when the auxiliary wafer transfer mechanism 40A moves within 0, 50A from being carried to the main wafer transfer mechanism 40 side. Therefore, it is possible to reduce the adverse effects of the particles of the wafer W processed in the coating processing unit 20 and the development processing unit 30, and to improve the yield.

In the above embodiment, the case where the processing apparatus according to the present invention is applied to the semiconductor wafer coating / developing processing system has been described. However, the processing apparatus according to the present invention can be applied to other processing systems. The object to be processed is not limited to the semiconductor wafer, and may be an object to be processed such as an LCD substrate, a glass substrate, a CD substrate, a photomask, a printed circuit board and a ceramic substrate.

[0042]

As described above, according to the coating processing apparatus of the present invention, the viscosity for adjusting the viscosity of the coating liquid is provided in the coating liquid supply pipe connecting the coating liquid supply means and the coating liquid supply source. By providing the adjusting means, it is possible to adjust the viscosity of one type of coating liquid and form coating films of different thicknesses, thus eliminating the need for replacing the coating liquid and facilitating the maintenance of the coating liquid. be able to. Therefore, the productivity can be improved and the space can be effectively used.

Even when a coating film is formed on a large-diameter object to be processed, the object to be processed can be rotated at a low speed to supply the coating liquid to form a coating film having a uniform thickness. Therefore, the yield can be improved.

[Brief description of drawings]

FIG. 1 is a schematic plan view of an example of a resist solution coating / development processing system for a semiconductor wafer equipped with a coating processing apparatus of the present invention.

FIG. 2 is a schematic configuration diagram showing a first embodiment of a coating treatment apparatus of the present invention.

FIG. 3 is a schematic sectional view of a high viscosity adjusting device according to the present invention.

FIG. 4 is a schematic cross-sectional view showing another form of the high viscosity adjusting device.

5 is a perspective view showing another form of the high viscosity adjusting device shown in FIG. 4. FIG.

FIG. 6 is a schematic cross-sectional view showing still another form of the high viscosity adjusting device.

FIG. 7 is a schematic configuration diagram showing a second embodiment of the coating treatment apparatus of the present invention.

FIG. 8 is a schematic configuration diagram showing a third embodiment of the coating treatment apparatus of the present invention.

FIG. 9 is a perspective view showing a main wafer transfer mechanism and an auxiliary wafer transfer mechanism in the resist solution coating / developing processing system.

[Explanation of symbols]

 W Semiconductor Wafer (Processing Object) A Resist Liquid (Coating Liquid) 22 Spin Chuck (Holding Means) 23 Resist Liquid Supply Nozzle (Coating Liquid Supplying Means) 24 Supply Pipeline 25 Resist Tank (Coating Liquid Supplying Source) 26 High Viscosity Adjustment Apparatus 60 CPU (control means) 61 Viscosity detection sensor 70, 70A, 70B Airtight container 70C Container 71 Inlet port 72 Outlet port 73 Pipe member 74 Exhaust pipe 76 Vacuum pump 78 Diaphragm 80 Ultrasonic wave generation element (ultrasonic wave generation means) 90 Heating Heater (heating means) 100 Low viscosity adjusting device 101 Adjusting tank 102 Adjusting valve 103 Thinner accommodating tank 110 Switching valve

Claims (7)

[Claims] 1. A holding means for rotatably holding an object to be processed, a coating solution supplying means for supplying a coating solution to the surface of the object to be processed, and a coating solution supplying means for supplying a coating solution to the coating solution supplying means. And a viscosity adjusting unit for adjusting the viscosity of the coating liquid is provided in a coating liquid supply line connecting the coating liquid supply unit and the coating liquid supply source. Coating treatment equipment. 2. The viscosity adjusting device is a high viscosity adjusting device for reducing the solvent of the coating liquid.
The coating treatment apparatus described. 3. The coating treatment apparatus according to claim 1, wherein the viscosity adjusting means is a low viscosity adjusting device that replenishes the coating liquid with a solvent for the coating liquid. 4. The viscosity adjusting means comprises a high viscosity adjusting device for reducing the solvent of the coating liquid and a low viscosity adjusting device for replenishing the solvent of the coating liquid, and the high viscosity adjusting device and the low viscosity adjusting device. The coating processing apparatus according to claim 1, wherein the apparatus is formed to be selectively operable. 5. The high-viscosity adjusting device comprises a closed container, an inlet for connecting a coating liquid supply source to introduce the coating liquid into the closed container, and coating from the closed container toward a coating liquid supply means. A delivery member for delivering the liquid, a tubular member provided in the closed container from the introduction port to the delivery port, and having a function of separating the solvent in the coating liquid flowing therein, and the closed container And a negative pressure means for reducing the solvent in the coating liquid by separating the solvent in the coating liquid flowing through the tubular member from the tubular member by applying a negative pressure. Alternatively, the coating processing apparatus according to item 4. 6. The high-viscosity adjusting device comprises a closed container, an inlet for connecting a coating liquid supply source to introduce the coating liquid into the closed container, and a coating liquid from the closed container toward a coating liquid supply means. A delivery port for delivering a liquid, a water-tight and flexible film body that constitutes the bottom surface of the closed container, is arranged adjacent to the film body, and vibrates the coating liquid in the closed container. An ultrasonic wave generating means for evaporating a solvent in a coating liquid, the coating treatment apparatus according to claim 2 or 4. 7. The high viscosity adjusting device comprises a container having an inlet connected to a coating liquid supply source, a delivery port for delivering the coating liquid toward the coating liquid supply means, and a container adjacent to the bottom surface of the container. 5. The coating treatment apparatus according to claim 2 or 4, further comprising: a heating unit that heats the coating liquid in the container to evaporate the solvent in the coating liquid.