JPH09209199A - Basic chromium sulfate for chromium plating - Google Patents

Basic chromium sulfate for chromium plating

Info

Publication number
JPH09209199A
JPH09209199A JP4037896A JP4037896A JPH09209199A JP H09209199 A JPH09209199 A JP H09209199A JP 4037896 A JP4037896 A JP 4037896A JP 4037896 A JP4037896 A JP 4037896A JP H09209199 A JPH09209199 A JP H09209199A
Authority
JP
Japan
Prior art keywords
chromium
sulfate
plating
basic
chromium sulfate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4037896A
Other languages
Japanese (ja)
Inventor
Yasuyuki Tanaka
保之 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemical Industrial Co Ltd
Original Assignee
Nippon Chemical Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemical Industrial Co Ltd filed Critical Nippon Chemical Industrial Co Ltd
Priority to JP4037896A priority Critical patent/JPH09209199A/en
Publication of JPH09209199A publication Critical patent/JPH09209199A/en
Pending legal-status Critical Current

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain basic chromium sulfate for chromium plating which is capable of forming a chromium plated film having uniform and firm covering power and excellent lustrous appearance. SOLUTION: This basic chromium sulfate is obtained by reducing chromic acid anhydride or/and sodium bichromate and has characteristics of which content of reducing agent remaining in the basic chromium sulfate is <=500ppm and content of chromium (VI) is <=0.24wt.% as Cr and in which organic substance does not substantially exist. Preferably, the basic chromium sulfate has <=55% basicity and content of sodium sulfate which is inevitably incorporated when sodium bichromate is used as a raw material is 25wt.% at most.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、均質で強固な被覆
力と優れた光沢外観を付与することができるクロムめっ
き用塩基性硫酸クロムに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a basic chromium sulphate for chrome plating which can impart a uniform and strong covering power and an excellent glossy appearance.

【0002】[0002]

【従来の技術】工業的なクロム電解めっき作業は、従来
から6価クロム浴を用いて行われてきたが、近時、6価
クロムの毒性に対する安全性の見地から、薬剤の取扱、
貯蔵、めっき作業の環境、廃液処理など一連の工程分野
で処理の対策および管理に細心の注意を払う必要があ
り、設備投資や処理コストの大きな負担増を余儀なくさ
れている。このため、6価クロムに代わる薬剤として毒
性のない3価クロムによる電解めっき法が見直され、一
部に実用化されてきている。
2. Description of the Related Art Industrial chromium electroplating work has conventionally been carried out using a hexavalent chromium bath. Recently, from the viewpoint of the safety of hexavalent chromium toxicity, handling of chemicals,
It is necessary to pay close attention to treatment measures and management in a series of process fields such as storage, plating environment, and waste liquid treatment, which inevitably leads to a large increase in capital investment and treatment cost. For this reason, the electroplating method using trivalent chromium, which is not toxic as a chemical agent replacing hexavalent chromium, has been reviewed and partly put to practical use.

【0003】硫酸クロムなどの3価クロム浴による電解
めっき法(以下「3価クロムめっき法」という。)は古
くから知られているクロムめっき技術で、例えば硫酸ク
ロムとシュウ酸(塩)を必須成分とするクロムめっき浴
を用いる方法(特開昭52−125427号公報)、硫酸クロム
とアミノ酸またはアミノ酸塩、スルファミン酸もしくは
スルファミン酸およびアンモニウムイオンを含有するク
ロムめっき浴を用いる方法(特開昭55−31122 号公
報)、特定濃度以下の硫酸クロム、錯化剤、緩衝剤およ
びSCNを含有するクロムめっき浴を用いる方法(特開
昭58−872915号公報)、特定濃度の硫酸クロムとCr錯
体の安定度定数を限定した錯化剤、緩衝剤および亜硫酸
塩または亜ニチオン酸からなるS含有種を含むクロムめ
っき浴を用いる方法(特開昭58−87292 号公報)等が既
に提案されている。
The electrolytic plating method using a trivalent chromium bath such as chromium sulfate (hereinafter referred to as "trivalent chromium plating method") is a chromium plating technique that has been known for a long time. For example, chromium sulfate and oxalic acid (salt) are essential. A method using a chromium plating bath as a component (JP-A-52-125427), a method using a chromium plating bath containing chromium sulfate and an amino acid or an amino acid salt, sulfamic acid or sulfamic acid and ammonium ion (JP-A-55). No. 31122), a method of using a chromium plating bath containing chromium sulfate having a specific concentration or less, a complexing agent, a buffer and SCN (JP-A-58-872915), A method using a chromium plating bath containing a complexing agent having a limited stability constant, a buffering agent and an S-containing species consisting of sulfite or dithionous acid (JP-A-58) 87292 JP) and the like have been proposed.

【0004】しかしながら、3価クロムめっき法では6
価クロムを用いた電解めっきで得られるような硬質のク
ロム皮膜が得られ難いため、多くの場合、装飾用品を対
象として長年に亘る実用化の検討がなされており、各種
助剤の添加等によりそれなりの改良はなされているもの
の、得られるめっき皮膜の光沢性、均一性、密着性など
に未だ解決すべき多くの課題が残されている。最近、3
価クロムめっき法において、めっき皮膜の耐剥離性の改
善を図った硫酸クロムに関する提案(特開平6−173098
号公報、特開平6−158398号公報、特開平6−173100号
公報)がなされているが、塩基性硫酸クロムをめっき用
のクロム源とすることについては開示されていない。
However, in the trivalent chromium plating method, it is 6
Since it is difficult to obtain a hard chrome film such as that obtained by electrolytic plating using valent chromium, in many cases it has been studied for practical use for many years for decorative items, and by the addition of various auxiliaries, etc. Although some improvements have been made, many problems still remain to be solved in terms of the glossiness, uniformity, adhesion, etc. of the obtained plating film. Recently 3
Proposal for chromium sulphate with improved peel resistance of the plating film in the valent chromium plating method (JP-A-6-173098)
Japanese Patent Laid-Open No. 6-158398 and Japanese Patent Laid-Open No. 6-173100), but does not disclose the use of basic chromium sulfate as a chromium source for plating.

【0005】ところで、塩基性硫酸クロムは従来から革
のなめし剤として有用されている工業薬品で、例えば無
水クロム酸をショ糖、水飴、ブドウ糖、アルコール等の
有機系還元剤を用いて還元する方法、重クロム酸ソーダ
を亜硫酸ガスにより還元する方法等で製造されている。
したがって、この塩基性硫酸クロムは3価のクロム源と
して電解メッキに使用し得る可能性があるが、現実に該
塩基性硫酸クロムを用いて形成される電解クロムめっき
皮膜は外観が著しく悪く、到底実用に供し得るものでは
ない。
By the way, basic chromium sulfate is an industrial chemical which has been conventionally used as a leather tanning agent. For example, chromic anhydride is reduced by using an organic reducing agent such as sucrose, starch syrup, glucose and alcohol. , Sodium dichromate is reduced by sulfurous acid gas.
Therefore, there is a possibility that this basic chromium sulfate can be used for electrolytic plating as a trivalent chromium source, but in reality, the electrolytic chromium plating film formed by using the basic chromium sulfate has a remarkably poor appearance and is extremely poor. It cannot be put to practical use.

【0006】[0006]

【発明が解決しようとする課題】本発明者は、無害で比
較的安価な塩基性硫酸クロムを電解めっき用のクロム源
として適用するために鋭意研究を重ねた結果、製造過程
で塩基性硫酸クロム中に残存する余剰の還元剤、6価の
クロムイオンおよび有機物がめっき皮膜の性状に悪影響
を与え、これら残存成分の含有量を一定量以下に抑制し
た場合に優れた光沢性外観を呈するクロムめっき層が密
着性よく形成できる事実を解明した。
DISCLOSURE OF INVENTION Problems to be Solved by the Invention The inventors of the present invention have conducted extensive studies to apply harmless and relatively inexpensive basic chromium sulfate as a chromium source for electrolytic plating. The surplus reducing agent, hexavalent chromium ions and organic substances remaining in the inside adversely affect the properties of the plating film, and when the content of these remaining components is suppressed below a certain amount, a chromium plating exhibiting an excellent gloss appearance. The fact that the layer can be formed with good adhesion was clarified.

【0007】本発明は、かかる知見に基づいて開発され
たもので、その課題とする目的は、均質で優れた光沢性
外観を呈するクロムめっき皮膜を良好な被覆性で再現性
よく形成することができるクロムめっき用塩基硫酸クロ
ムを提供することにある。
The present invention was developed on the basis of such findings, and an object of the present invention is to form a chromium plating film having a uniform and excellent gloss appearance with good coverage and reproducibility. The object is to provide a base chromium sulfate capable of forming chromium.

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
めの本発明に係る請求項1によるクロムめっき用塩基性
硫酸クロムは、無水クロム酸または/および重クロム酸
ソーダを還元して得られる塩基性硫酸クロムであって、
該塩基性硫酸クロム中に残存する還元剤含有量が500
ppm 以下で、6価クロム含有量がCrとして0.24重
量%以下、かつ有機物が実質的に存在しない特性を備え
ることを構成上の特徴とする。
The basic chromium sulfate for chromium plating according to claim 1 of the present invention for achieving the above object is obtained by reducing chromic anhydride or / and sodium dichromate. Basic chromium sulfate,
The content of the reducing agent remaining in the basic chromium sulfate is 500.
It is a structural feature that the content of hexavalent chromium is 0.24% by weight or less as Cr and the organic substance is substantially absent at ppm or less.

【0009】また請求項2の発明は、上記の構成におい
て塩基度が55%以下であること、請求項3の発明は、
重クロム酸ソーダを原料とした場合に塩基性硫酸クロム
中に不可避的に混入するNa2 SO4 含有量が多くとも
25重量%であることである。
According to the invention of claim 2, the basicity is 55% or less in the above constitution, and the invention of claim 3 is
The content of Na 2 SO 4 inevitably mixed in basic chromium sulfate when sodium dichromate is used as a raw material is 25% by weight.

【0010】なお、本発明で対象とする塩基性硫酸クロ
ムとは、3価のクロム塩として形成された硫酸クロムの
錯体を構成する配位子(リガンド)の一部にOHイオン
が配位した組成を有し、OHの配位量が次式(式中、x
はOH基である。)で示される塩基度を表すものと定義
される。 塩基度(B.D)=x/3×100(%)
The basic chromium sulfate to which the present invention is directed is that an OH ion is coordinated with a part of a ligand (ligand) constituting a complex of chromium sulfate formed as a trivalent chromium salt. It has a composition and the coordination amount of OH is
Is an OH group. ) Is defined as representing the basicity. Basicity (BD) = x / 3 × 100 (%)

【0011】[0011]

【発明の実施の形態】本発明に係る塩基性硫酸クロム
は、無水クロム酸、重クロム酸ソーダ、あるいはこれら
の混合物に還元剤を添加して3価のクロムに還元して得
られるものである。したがって、基本的には、革なめし
剤として汎用されている塩基性硫酸クロムと相違はな
い。塩基性硫酸クロムの塩基度は、めっき浴に可溶であ
る限り必ずしも限定されないが、好ましくは55%以下
の塩基度に調整される。塩基度が55%を越えると水酸
化クロムのゲル化を助長してめっきむらの原因となる。
塩基度が低い場合には水酸化クロムを生成させることは
ないが、めっき浴中のクロム組成が変化し易くなって、
結果的にめっき皮膜の物性を損ねることがある。より好
適な塩基度は、10〜40%の範囲である。なお、塩基
度の測定は、水酸化ナトリウム水溶液によるpH滴定法
により行うことができる。
BEST MODE FOR CARRYING OUT THE INVENTION The basic chromium sulfate according to the present invention is obtained by adding a reducing agent to chromic anhydride, sodium dichromate, or a mixture thereof to reduce to trivalent chromium. . Therefore, basically, there is no difference from the basic chromium sulfate that is generally used as a leather tanning agent. The basicity of the basic chromium sulfate is not necessarily limited as long as it is soluble in the plating bath, but it is preferably adjusted to 55% or less. When the basicity exceeds 55%, the gelation of chromium hydroxide is promoted, which causes uneven plating.
If the basicity is low, it does not generate chromium hydroxide, but the chromium composition in the plating bath tends to change,
As a result, the physical properties of the plating film may be impaired. A more preferred basicity is in the range of 10-40%. The basicity can be measured by a pH titration method using an aqueous sodium hydroxide solution.

【0012】本発明においては、塩基性硫酸クロム中に
残存する還元剤の含有量が500ppm 以下で、6価クロ
ムの含有量が0.24重量%以下かつ有機物が実質存在
しないことが優れた被覆力ならびに外観を備えるクロム
めっき層を得るための最も重要な要件となる。このう
ち、還元剤の残存を無くすためには、余剰の還元剤が生
じない理論還元量で還元反応させればよいが、このよう
な反応系では6価クロムの除去が不完全とならざるを得
ない。したがって、理論還元量を越える条件下で反応を
行った際に可避的に混入する余剰の還元剤成分を可及的
に除去し、最終的に得られる塩基性硫酸クロム中に占め
る量として500ppm 以下、好ましくは100ppm 以下
になるように調整する。残存する還元剤含有量が500
ppm を上回ると、めっき皮膜の被覆力が減退すると共
に、めっき外観が著しく悪化する。
In the present invention, a coating excellent in that the content of the reducing agent remaining in the basic chromium sulfate is 500 ppm or less, the content of hexavalent chromium is 0.24% by weight or less, and the organic substance is substantially absent. It is the most important requirement for obtaining a chrome plated layer that has both strength and appearance. Of these, in order to eliminate the remaining of the reducing agent, it is sufficient to carry out the reduction reaction with a theoretical reduction amount that does not generate an excess reducing agent, but in such a reaction system, the removal of hexavalent chromium must be incomplete. I don't get it. Therefore, the excess reducing agent component that is inevitably mixed in when the reaction is carried out under the conditions exceeding the theoretical reduction amount is removed as much as possible, and the amount of the basic chromium sulfate finally obtained is 500 ppm. Below, it is preferably adjusted to 100 ppm or less. Remaining reducing agent content is 500
When it exceeds ppm, the coating power of the plating film decreases and the appearance of the plating deteriorates significantly.

【0013】一方、塩基性硫酸クロム中に残存する6価
クロムの含有量をCrとして0.24重量%以下に設定
する理由は、めっき浴中に6価クロムが存在すると反応
過程でCr6+が完全に還元されることなく、めっき皮膜
の形成に微妙に影響してめっき効率の減退やめっき皮膜
の物性低下を招くが、その残存含有量が0.24重量%
以下であると前記の不都合な現象は効果的に抑制され、
効率的なめっき処理の下で密着性のよい優れた外観のク
ロムめっき層を形成することができるからである。より
好ましい6価クロムの残存含有量の上限は、0.01%
である。
On the other hand, the reason for setting the content of hexavalent chromium remaining in the basic chromium sulfate as 0.24% by weight or less as Cr is that the presence of hexavalent chromium in the plating bath causes Cr 6+ in the reaction process. Is not completely reduced, which causes a slight influence on the formation of the plating film and leads to a decline in plating efficiency and deterioration of the physical properties of the plating film, but the residual content is 0.24% by weight.
If the following, the above-mentioned inconvenient phenomenon is effectively suppressed,
This is because it is possible to form a chromium plating layer having good adhesion and an excellent appearance under an efficient plating process. The more preferable upper limit of the residual content of hexavalent chromium is 0.01%.
It is.

【0014】また、本発明では塩基性硫酸クロム中に有
機物が実質存在しないようにする。有機物が実質存在し
ないとは、還元剤として後述の有機系還元剤を用いた場
合に、塩基性硫酸クロム中に余剰の有機系還元剤が存在
しない状態をいう。この理由は、塩基性硫酸クロム中に
有機物が存在すると、めっき皮膜中に有機物が混入し
て、めっき密着性が低下するとともに、めっき外観が著
しく悪化するからである。
Further, in the present invention, the organic substances are not substantially present in the basic chromium sulfate. The term "substantially free of organic matter" means a state in which there is no excess organic reducing agent in the basic chromium sulfate when the organic reducing agent described below is used as the reducing agent. The reason for this is that if an organic substance is present in the basic chromium sulfate, the organic substance is mixed in the plating film to lower the plating adhesion and significantly deteriorate the plating appearance.

【0015】上記の組成を有する本発明のクロムめっき
用塩基性硫酸クロムは、無水クロム酸または/および重
クロム酸ソーダを適宜な還元剤を用いて還元反応させる
方法により製造される。重クロム酸ソーダを原料とする
場合には、生成する塩基性硫酸クロム中にNa2 S04
が混入するが、この硫酸ソーダはめっき用の導電性塩と
して機能するから、寧ろこの混入を伴わない無水クロム
酸を原料とする場合よりも成分組成面で有利となる。し
かし、重クロム酸ソーダを原料とする場合に不可避的に
混入するNa2 S04 の含有量は、多くても25重量%
までの範囲とすることが好ましく、前記の量を上回る含
有はめっき処理の円滑性を阻害する結果をもたらす。
The basic chromium sulfate for chromium plating of the present invention having the above-mentioned composition is produced by a method in which chromic anhydride or / and sodium dichromate is subjected to a reduction reaction using an appropriate reducing agent. When sodium dichromate is used as the raw material, Na 2 S 0 4
However, since this sodium sulfate functions as a conductive salt for plating, it is more advantageous in terms of composition than the case of using chromic anhydride as a raw material, which is not accompanied by this contamination. However, when sodium dichromate is used as a raw material, the content of Na 2 SO 4 inevitably mixed is 25% by weight at most.
It is preferable that the content be in the range of up to, and if the content exceeds the above amount, the smoothness of the plating process is hindered.

【0016】還元剤としては、例えばショ糖、澱粉、ア
ルコールなどの有機系還元剤、または過酸化水素、亜硫
酸ガス、亜硫酸などの無機還元剤を挙げることができ
る。しかし、これらの中では6価クロム酸の還元理論量
より多く添加しても、余剰の還元剤成分を加熱脱気処理
により容易に除去することができる無機系還元剤を用い
ることが好ましく、特に亜硫酸ガスの適用が好適であ
る。
Examples of the reducing agent include organic reducing agents such as sucrose, starch and alcohol, and inorganic reducing agents such as hydrogen peroxide, sulfurous acid gas and sulfurous acid. However, among these, it is preferable to use an inorganic reducing agent that can easily remove the excess reducing agent component by heating degassing even if the amount of hexavalent chromic acid added is larger than the theoretical reduction amount. Application of sulfurous acid gas is preferred.

【0017】残存する還元剤含有量が500ppm で、6
価クロム含有量がCrとして0.24重量%以下かつ有
機物が実質存在しない塩基性硫酸クロムを得るための好
ましい態様は、次のとおりである。有機系還元剤を用い
る場合には、6価クロムに対して理論量以下の還元剤を
加えて還元反応を行わせたのち、ついで残存6価クロム
を亜硫酸ガス等の無機系還元剤を用いて実質的に完全に
還元し、余剰の無機還元剤を加熱脱気処理する。無機系
還元剤のみを用いる場合には、6価クロムに対して理論
量以上の還元剤により還元反応させ、反応終了後に残存
する余剰の還元剤成分を加熱脱気する。なお、6価クロ
ムの還元反応において微量部分が残存する還元剤と6価
クロム量の低減化は相矛盾する背反的要因ではあるが、
上記したように還元反応の終期において十分に留意し、
かつ反応の後処理を加えることにより、実質有機物を含
まずこれら両成分量を同時に制御することができる。
When the residual reducing agent content is 500 ppm, 6
A preferred embodiment for obtaining basic chromium sulfate having a valent chromium content of 0.24% by weight or less as Cr and substantially free of organic substances is as follows. When an organic reducing agent is used, a reducing agent in an amount less than the theoretical amount is added to hexavalent chromium to cause a reduction reaction, and then the remaining hexavalent chromium is treated with an inorganic reducing agent such as sulfurous acid gas. It is substantially completely reduced, and the excess inorganic reducing agent is heated and deaerated. When only an inorganic reducing agent is used, the hexavalent chromium is reduced by a reducing agent in a stoichiometric amount or more, and the excess reducing agent component remaining after the reaction is degassed by heating. It should be noted that the reducing agent in which a trace amount remains in the reduction reaction of hexavalent chromium and the reduction of the amount of hexavalent chromium are contradictory contradictory factors,
As noted above, pay close attention to the final stage of the reduction reaction,
Moreover, by adding a post-treatment to the reaction, it is possible to simultaneously control the amounts of both of these components without containing a substantial organic substance.

【0018】例えば、重クロム酸ソーダを亜硫酸ガスで
還元して塩基性硫酸クロムを得るための反応形態は、次
式の反応式による。 Na2 Cr2 7 +3SO2 +H2 O→2Cr(OH)
SO2 +Na2 SO4
For example, the reaction mode for reducing sodium dichromate with sulfurous acid gas to obtain basic chromium sulfate is as follows. Na 2 Cr 2 O 7 + 3SO 2 + H 2 O → 2Cr (OH)
SO 2 + Na 2 SO 4

【0019】この反応は、重クロム酸ソーダ、亜硫酸ガ
スおよび水による極めて単純なものであり、還元剤とし
ての亜硫酸ガス量の調整は容易にでき、また副生する硫
酸ソーダはそのままめっき浴の電導性塩として適用でき
るため、本発明の塩基性硫酸クロムを得るためには工業
的に最も有効な手段となる。
This reaction is extremely simple with sodium dichromate, sulfurous acid gas and water, the amount of sulfurous acid gas as a reducing agent can be easily adjusted, and sodium sulfate as a by-product is used as it is in the electroconductivity of the plating bath. Since it can be applied as a basic salt, it is the most industrially effective means for obtaining the basic chromium sulfate of the present invention.

【0020】このようにして得られた反応生成物は、必
要に応じて塩基度の調整を行ってクロムめっき用塩基性
硫酸クロムとする。該塩基性硫酸クロムをクロムめっき
浴として建浴するには、必要に応じて例えば蟻酸塩、酢
酸塩等の錯化剤、ホウ酸、ホウ酸ソーダ等の緩衝剤、ア
ルカリ金属塩、アルカリ土類金属塩等の可溶性金属塩、
pH調整剤、界面活性剤などの調整薬剤を含有させるこ
とができる。浴濃度には特に限定はないが、好ましくは
塩基性硫酸クロム0.01〜1mol/l 、錯化剤0.01
〜3mol/l 、緩衝剤が0.1〜1mol/l 、電導性塩2〜
6mol/l の範囲に設定される。
The reaction product thus obtained is adjusted to basicity as necessary to obtain basic chromium sulfate for chromium plating. To form the basic chromium sulfate as a chromium plating bath, if necessary, for example, a complexing agent such as formate and acetate, a buffering agent such as boric acid and sodium borate, an alkali metal salt, and an alkaline earth metal. Soluble metal salts such as metal salts,
An adjusting agent such as a pH adjusting agent and a surfactant can be contained. The bath concentration is not particularly limited, but preferably 0.01 to 1 mol / l of basic chromium sulfate and 0.01 as a complexing agent.
~ 3 mol / l, buffering agent 0.1 to 1 mol / l, conductive salt 2
It is set in the range of 6 mol / l.

【0021】めっき条件は、用いるめっき浴の組成等に
もよるが、pH2.3〜3.8、温度27〜60℃、電
流密度0.3〜50A/dm2 、好ましくは3〜11A/dm2
に設定することが好ましい。
The plating conditions are pH 2.3 to 3.8, temperature 27 to 60 ° C., current density 0.3 to 50 A / dm 2 , preferably 3 to 11 A / dm, depending on the composition of the plating bath used. 2
It is preferable to set

【0022】本発明の塩基性硫酸クロムをクロム源とし
て形成されたクロムめっき層は、余剰の還元剤や6価ク
ロムおよび有機物が許容量以上にめっき浴に混入してい
ないため、常に均一で光沢性に優れた外観を呈して基材
に密着する高品位の性状を有するものである。
The chromium plating layer formed by using the basic chromium sulfate of the present invention as a chromium source is always uniform and bright because excess reducing agent, hexavalent chromium, and organic substances are not mixed in the plating bath beyond the allowable amount. It has a high-quality property of exhibiting an excellent appearance and adhering to a substrate.

【0023】[0023]

【実施例】以下、本発明の実施例を比較例と対比して具
体的に説明するが、本発明の範囲はこれら実施例に限定
されるものではない。なお、各例において塩基性硫酸ク
ロム中に残存するSO2 量の測定は、SO2 をヨウ素で
酸化し、過剰のヨウ素をチオ硫酸ナトリウム溶液で逆滴
定する方法によった。また、残存6価クロム量は、比色
分析法で測定した。
EXAMPLES Hereinafter, examples of the present invention will be specifically described in comparison with comparative examples, but the scope of the present invention is not limited to these examples. In each example, the amount of SO 2 remaining in basic chromium sulfate was measured by oxidizing SO 2 with iodine and back titrating excess iodine with a sodium thiosulfate solution. Further, the amount of residual hexavalent chromium was measured by a colorimetric analysis method.

【0024】実施例1 重クロム酸ソーダの60重量%水溶液に亜硫酸ガス(理
論還元量の105%)を徐々に導入して還元処理を施
し、塩基度が33.3%の塩基性硫酸クロムを得た。
Example 1 Sulfurous acid gas (105% of theoretical reduction amount) was gradually introduced into a 60% by weight aqueous solution of sodium dichromate to carry out a reduction treatment, and basic chromium sulfate having a basicity of 33.3% was added. Obtained.

【0025】得られた塩基性硫酸クロムを主剤として用
い、表1に示す組成のクロムめっき液をハンセン槽で建
浴して予め光沢ニッケルめっきを施した巾67mm、長さ
100mmの黄銅板(試験板)を浴温30℃、5アンペア
の条件で3分間電解クロムめっきした。得られたクロム
めっき皮膜の被覆力およびめっき光沢性を測定評価し、
その結果を塩基性硫酸クロム中の残存物含有量と対比さ
せて表2に示した。なお、クロムめっき皮膜の被覆力は
最小析出電流密度(めっきの付き易さの指標)で示し、
めっき光沢性(外観)は視覚評価によった。
A brass plate having a width of 67 mm and a length of 100 mm, which was prepared by bathing a chromium plating solution having the composition shown in Table 1 in a Hansen bath in advance and using the obtained basic chromium sulfate as a main agent, was tested (test). The plate) was electrolytically chromium plated for 3 minutes under the conditions of a bath temperature of 30 ° C. and 5 amperes. The covering power and plating gloss of the obtained chromium plating film are measured and evaluated,
The results are shown in Table 2 in comparison with the residual content in the basic chromium sulfate. In addition, the covering power of the chrome plating film is indicated by the minimum deposition current density (index of the ease of plating),
The plating gloss (appearance) was evaluated by visual evaluation.

【0026】実施例2 無水クロム酸の60重量%水溶液100重量部に、98
重量%濃度の硫酸60重量部およびショ糖13重量部
(理論還元量の100%)を加えて1時間撹拌混合し、
更に亜硫酸ガスを5重量部導入して2時間放置した。つ
いで、余剰の亜硫酸ガスを除去するため、温度110℃
で5時間加熱処理して塩基度が33.3%の塩基性硫酸
クロムを得た。得られた塩基性硫酸クロムを主剤とし、
表1に示す組成のクロムめっき浴により実施例1と同一
条件でクロムめっき処理を施した。形成されたクロムめ
っき皮膜につき実施例1と同様に測定評価し、その結果
を表2に併載した。
Example 2 98 parts of 100 parts by weight of a 60% by weight aqueous solution of chromic anhydride were added.
60 parts by weight of sulfuric acid having a concentration of 1% by weight and 13 parts by weight of sucrose (100% of the theoretical reduction amount) were added and mixed with stirring for 1 hour,
Further, 5 parts by weight of sulfurous acid gas was introduced and left for 2 hours. Then, in order to remove the excess sulfurous acid gas, the temperature is 110 ° C.
After heating for 5 hours, basic chromium sulfate having a basicity of 33.3% was obtained. Using the obtained basic chromium sulfate as the main agent,
Chromium plating was performed under the same conditions as in Example 1 using a chromium plating bath having the composition shown in Table 1. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0027】実施例3 無水クロム酸の60重量%水溶液100重量部と重クロ
ム酸ソーダの40重量%水溶液197重量部を混合し、
この混合物に98重量%濃度の硫酸150重量部および
ショ糖26重量部(理論還元量の100%)を加えて1
時間撹拌混合し、更に亜硫酸ガスを11重量部導入して
1時間放置した。ついで、余剰の亜硫酸ガスを除去する
ため、温度110℃で5時間加熱処理して塩基度が3
3.3%の塩基性硫酸クロムを得た。得られた塩基性硫
酸クロムを主剤とし、表1に示す組成のクロムめっき浴
により実施例1と同一条件でクロムめっき処理を施し
た。形成されたクロムめっき皮膜につき実施例1と同様
に測定評価し、その結果を表2に併載した。
Example 3 100 parts by weight of a 60% by weight aqueous solution of chromic anhydride and 197 parts by weight of a 40% by weight aqueous solution of sodium dichromate were mixed,
To this mixture was added 150 parts by weight of 98% by weight sulfuric acid and 26 parts by weight of sucrose (100% of the theoretical reduction amount) to obtain 1
After stirring and mixing for 11 hours, 11 parts by weight of sulfurous acid gas was introduced and the mixture was allowed to stand for 1 hour. Then, in order to remove excess sulfurous acid gas, heat treatment was performed at a temperature of 110 ° C. for 5 hours to adjust the basicity to 3
3.3% basic chromium sulphate was obtained. Using the obtained basic chromium sulfate as a main agent, a chromium plating bath having the composition shown in Table 1 was subjected to a chromium plating treatment under the same conditions as in Example 1. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0028】実施例4 重クロム酸ソーダの40重量%水溶液に亜硫酸ガス(理
論還元量の110%)を徐々に導入して還元処理を施
し、余剰の亜硫酸ガスを除去するため温度110℃で5
時間加熱処理して塩基度が33.3%の塩基性硫酸クロ
ムを得た。得られた塩基性硫酸クロムを主剤とし、表1
に示す組成のクロムめっき浴により実施例1と同一条件
でクロムめっき処理を施した。形成されたクロムめっき
皮膜につき実施例1と同様に測定評価し、その結果を表
2に併載した。
Example 4 Sulfurous acid gas (110% of theoretical reduction amount) was gradually introduced into a 40% by weight aqueous solution of sodium dichromate to carry out a reduction treatment, and at a temperature of 110 ° C. for removing excess sulfurous acid gas.
After heat treatment for an hour, basic chromium sulfate having a basicity of 33.3% was obtained. The obtained basic chromium sulfate was used as the main agent, and Table 1
Chromium plating treatment was performed under the same conditions as in Example 1 with a chromium plating bath having the composition shown in. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0029】比較例1 重クロム酸ソーダの40重量%水溶液に亜硫酸ガス(理
論還元量の110%)を徐々に導入して還元処理を施
し、余剰の亜硫酸ガスを除去しないで塩基度が33.3
%の塩基性硫酸クロムを得た。得られた塩基性硫酸クロ
ムを主剤とし、表1に示す組成のクロムめっき浴により
実施例1と同一条件でクロムめっき処理を施した。形成
されたクロムめっき皮膜につき実施例1と同様に測定評
価し、結果を表2に併載した。
Comparative Example 1 Sulfurous acid gas (110% of theoretical reduction amount) was gradually introduced into a 40% by weight aqueous solution of sodium dichromate to carry out a reduction treatment, and the basicity was 33. Three
% Basic chromium sulphate was obtained. Using the obtained basic chromium sulfate as a main agent, a chromium plating bath having the composition shown in Table 1 was subjected to a chromium plating treatment under the same conditions as in Example 1. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0030】比較例2 重クロム酸ソーダの40重量%水溶液に亜硫酸ガス(理
論還元量の100%)を徐々に導入して還元処理を施
し、余剰の亜硫酸ガスを除去しないで塩基度が33.3
%の塩基性硫酸クロムを得た。得られた塩基性硫酸クロ
ムを主剤とし、表1に示す組成のクロムめっき浴により
実施例1と同一条件でクロムめっき処理を施した。形成
されたクロムめっき皮膜につき実施例1と同様に測定評
価し、結果を表2に併載した。
Comparative Example 2 Sulfurous acid gas (100% of theoretical reduction amount) was gradually introduced into a 40% by weight aqueous solution of sodium dichromate to carry out a reduction treatment, and the basicity was 33. Three
% Basic chromium sulphate was obtained. Using the obtained basic chromium sulfate as a main agent, a chromium plating bath having the composition shown in Table 1 was subjected to a chromium plating treatment under the same conditions as in Example 1. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0031】比較例3 無水クロム酸の60重量%水溶液100重量部に、98
重量%濃度の硫酸60重量部およびショ糖13重量部
(理論還元量の110%)を加えて1時間撹拌混合して
還元処理し、塩基度が33.3%の塩基性硫酸クロムを
得た。得られた塩基性硫酸クロムを主剤とし、表1に示
す組成のクロムめっき浴により実施例1と同一条件でク
ロムめっき処理を施した。形成されたクロムめっき皮膜
につき実施例1と同様に測定評価し、その結果を表2に
併載した。
Comparative Example 3 100 parts by weight of a 60% by weight aqueous solution of chromic anhydride was added with 98 parts by weight.
60 parts by weight of sulfuric acid having a concentration of 1% by weight and 13 parts by weight of sucrose (110% of the theoretical reduction amount) were added, and the mixture was stirred and mixed for 1 hour for reduction treatment to obtain basic chromium sulfate having a basicity of 33.3%. . Using the obtained basic chromium sulfate as a main agent, a chromium plating bath having the composition shown in Table 1 was subjected to a chromium plating treatment under the same conditions as in Example 1. The formed chromium plating film was measured and evaluated in the same manner as in Example 1, and the results are also shown in Table 2.

【0032】[0032]

【表1】 〔表注〕*実施例1、4、比較例1、2ではNa2 SO
4 を25重量%未満含有。
[Table 1] [Table Note] * Na 2 SO in Examples 1 and 4 and Comparative Examples 1 and 2
Contains less than 25% by weight of 4 .

【0033】[0033]

【表2】 [Table 2]

【0034】表2の結果から、本発明の塩基性硫酸クロ
ムを用いた実施例によるクロムめっき皮膜は、均質で被
覆力が良好で、優れた光沢外観を備えるものであった。
これに対し、比較例のめっき皮膜はいずれも外観が悪
く、比較例2では6価クロム量が0.24重量%を越え
比較例3では有機物がめっき浴へ混入したため3価クロ
ムめっき色とは異なるめっき層の色調を呈した。また、
比較例1では余剰還元剤が多く残留するため、外観劣化
のみでなく被覆力においても劣る結果を示した。
From the results shown in Table 2, the chromium plating films according to the examples using the basic chromium sulfate of the present invention were homogeneous, had good covering power, and had an excellent gloss appearance.
On the other hand, the plating films of Comparative Examples all have a poor appearance. In Comparative Example 2, the amount of hexavalent chromium exceeds 0.24% by weight, and in Comparative Example 3, the organic substances are mixed in the plating bath, so that the color of trivalent chromium plating is different. It exhibited different plating layer tones. Also,
In Comparative Example 1, since a large amount of the excess reducing agent remained, not only the appearance deterioration but also the covering power was inferior.

【0035】[0035]

【発明の効果】以上のとおり、本発明によれば製造過程
で残存する還元剤ならびに6価クロムの含有量を許容量
値以下に抑制し、有機物が実質存在しないため、従来め
っき用クロム源としての使用ができなかった3価の塩基
性硫酸クロムを用いて良好な被覆力により優れた光沢外
観を有するクロムめっき皮膜を再現性よく形成し得るク
ロムめっき用塩基性硫酸クロムを提供することができ
る。したがって、無害な環境下でめっき性状に優れるク
ロムめっき用のクロム源として、工業的に頗る有用性が
期待できる。
As described above, according to the present invention, the content of the reducing agent and hexavalent chromium remaining in the production process is suppressed to the allowable value or less, and the organic substance is substantially absent. It is possible to provide a basic chromium sulfate for chromium plating, which can form a chromium plating film having excellent gloss appearance with good reproducibility by using trivalent basic chromium sulfate which could not be used. . Therefore, it can be expected to be industrially useful as a chromium source for chromium plating that has excellent plating properties in a harmless environment.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 無水クロム酸または/および重クロム酸
ソーダを還元して得られる塩基性硫酸クロムであって、
該塩基性硫酸クロム中に残存する還元剤含有量が500
ppm 以下で、6価クロム含有量がCrとして0.24重
量%以下、かつ有機物が実質存在しない特性を備えるこ
とを特徴とするクロムめっき用塩基性硫酸クロム。
1. A basic chromium sulfate obtained by reducing chromic anhydride or / and sodium dichromate,
The content of the reducing agent remaining in the basic chromium sulfate is 500.
A basic chromium sulfate for chromium plating, which is characterized by having a hexavalent chromium content of 0.24% by weight or less as Cr and having substantially no organic substance at ppm or less.
【請求項2】 塩基度が55%以下である請求項1記載
のクロムめっき用塩基性硫酸クロム。
2. The basic chromium sulfate for chromium plating according to claim 1, which has a basicity of 55% or less.
【請求項3】 重クロム酸ソーダを原料とした場合に塩
基性硫酸クロム中に不可避的に混入するNa2 SO4
有量が、多くとも25重量%である請求項1又は2記載
のクロムめっき用塩基性硫酸クロム。
3. The chromium plating according to claim 1 or 2, wherein the content of Na 2 SO 4 which is unavoidably mixed in the basic chromium sulfate when sodium dichromate is used as a raw material is 25% by weight. Basic chrome sulfate for use.
JP4037896A 1996-02-02 1996-02-02 Basic chromium sulfate for chromium plating Pending JPH09209199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4037896A JPH09209199A (en) 1996-02-02 1996-02-02 Basic chromium sulfate for chromium plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4037896A JPH09209199A (en) 1996-02-02 1996-02-02 Basic chromium sulfate for chromium plating

Publications (1)

Publication Number Publication Date
JPH09209199A true JPH09209199A (en) 1997-08-12

Family

ID=12578998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4037896A Pending JPH09209199A (en) 1996-02-02 1996-02-02 Basic chromium sulfate for chromium plating

Country Status (1)

Country Link
JP (1) JPH09209199A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006043507A1 (en) * 2004-10-18 2006-04-27 Yamaha Hatsudoki Kabushiki Kaisha Engine part
JP2006249518A (en) * 2005-03-11 2006-09-21 Koka Chrom Kogyo Kk Method for supplying chromium ion to trivalent chromium plating bath

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006043507A1 (en) * 2004-10-18 2006-04-27 Yamaha Hatsudoki Kabushiki Kaisha Engine part
JP2006249518A (en) * 2005-03-11 2006-09-21 Koka Chrom Kogyo Kk Method for supplying chromium ion to trivalent chromium plating bath
JP4667084B2 (en) * 2005-03-11 2011-04-06 硬化クローム工業株式会社 Chromium ion replenishment method for trivalent chromium plating bath

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