JPH09205002A - Method for manufacturing chip electronic component - Google Patents

Method for manufacturing chip electronic component

Info

Publication number
JPH09205002A
JPH09205002A JP1144496A JP1144496A JPH09205002A JP H09205002 A JPH09205002 A JP H09205002A JP 1144496 A JP1144496 A JP 1144496A JP 1144496 A JP1144496 A JP 1144496A JP H09205002 A JPH09205002 A JP H09205002A
Authority
JP
Japan
Prior art keywords
chip
metal
electronic component
terminal electrode
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1144496A
Other languages
Japanese (ja)
Inventor
Tomohisa Okimoto
知久 沖本
Masayuki Takahashi
雅幸 高橋
Kenji Nozoe
研治 野添
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1144496A priority Critical patent/JPH09205002A/en
Publication of JPH09205002A publication Critical patent/JPH09205002A/en
Withdrawn legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

PROBLEM TO BE SOLVED: To remove a metal film adhered to an element portion of a chip and form a metal layer excellent in wetness for solder on a terminal electrode by a method wherein, after a metal film excellent in wetness for solder is formed on the entire face of a chip, the metal film is heated and melted at a melting point or higher in vapor or liquid. SOLUTION: A terminal electrode 4 is formed in a dip type on both end faces of an element 1, and on the faces by plating, a metal film (solder film) 3 excellent in solder wetness is formed on the entire face of the element 1 and the terminal electrode 4. Next, the metal film 3 is heated and melted and alloyed with an underlayer metal on a face of the terminal electrode 4 to form a metal layer 5 excellent in solder wetness, and it gathers to the side of the terminal electrode 4 by a surface stress of the molten metal on the face of the element 1. Alternatively, it becomes metal balls and drops by its weight while cooled and solidified. After cooled, the metal balls formed on the face of the element 1 are removed by ultrasonic cleaning. Thereby, it is possible to form the metal layer 5 excellent in solder wetness on the face of the element 1 only in the terminal electrode 4 without peculiar coating.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、チップ型電子部品
(以降チップと称する)の製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a chip type electronic component (hereinafter referred to as a chip).

【0002】[0002]

【従来の技術】従来、チップの製造方法としては特開平
3−250603号公報に記載されたものが知られてい
る。一般にチップは端子電極の表面に半田に対して濡れ
性の良い金属層をメッキ等の手法で形成していたが、サ
ーミスタのように素体の比抵抗の低いものはメッキの場
合、素体表面上に金属層が形成されるので、これを防ぐ
ため素体表面を耐メッキ性のガラスや樹脂などでコーテ
ィングをする工法が取られている。
2. Description of the Related Art Conventionally, as a method of manufacturing a chip, a method described in Japanese Patent Application Laid-Open No. 3-250603 is known. Generally, a chip has a metal layer with good wettability to solder formed on the surface of the terminal electrode by a method such as plating.However, if the element body with a low specific resistance such as a thermistor is plated, the surface of the element body Since a metal layer is formed on the metal layer, a method of coating the surface of the element body with plating-resistant glass or resin is used to prevent this.

【0003】以下に従来のチップの製造方法をサーミス
タを例に図4で説明する。図4は従来チップの斜視図で
ある。図4において、1は素体、2はガラス層、4は端
子電極、5は金属層である。
A conventional method for manufacturing a chip will be described below with reference to FIG. 4 by taking a thermistor as an example. FIG. 4 is a perspective view of a conventional chip. In FIG. 4, 1 is an element body, 2 is a glass layer, 4 is a terminal electrode, and 5 is a metal layer.

【0004】平板上に焼成された素体1の上下平面にガ
ラスを塗布・焼付けした後、短冊状に切断し、素体1が
露出した側面に再度ガラスを塗布・焼付けたものをチッ
プ状に切断する。切断したチップ状素子のガラスで覆わ
れてない両端面部に電極ペーストを塗布・焼付け端子電
極4を形成する。その後メッキで半田濡れ性の良い金属
層5を端子電極4上に形成する。
After the glass is applied and baked on the upper and lower flat surfaces of the element body 1 fired on a flat plate, it is cut into strips, and the exposed side surface of the element body 1 is again applied with glass and fired into chips. Disconnect. Electrode paste is applied and baked on both end portions of the cut chip-shaped element that are not covered with glass to form the terminal electrodes 4. After that, a metal layer 5 having good solder wettability is formed on the terminal electrode 4 by plating.

【0005】[0005]

【発明が解決しようとする課題】しかしながら従来の工
法では、端子電極4の表面にのみ半田に対して濡れ性の
良好な金属層5を形成するため、素体1表面に耐メッキ
性のガラス層2を設けなければならず手間のかかるもの
であった。そこで本発明は、従来のガラス層等の絶縁物
を廃止することを目的とする。
However, according to the conventional method, the metal layer 5 having good wettability to solder is formed only on the surface of the terminal electrode 4, so that the surface of the element body 1 is made of a glass layer having resistance to plating. 2 had to be provided, which was troublesome. Therefore, the present invention aims to eliminate conventional insulators such as glass layers.

【0006】[0006]

【課題を解決するための手段】この目的を達成するため
に本発明は、チップの全面に半田濡れ性が良好な金属皮
膜を形成させた後加熱溶融させてチップの素体表面では
金属ボール状にし、端子電極の表面上のみに半田濡れ性
が良い金属層を形成させ、前記金属ボールは除去する。
前記金属皮膜は加熱溶解したとき、素体表面では素体と
馴染まなく、その表面張力により球状となり、端子電極
表面では下地金属と合金化し半田濡れ性の良い金属層を
形成する。従って素体表面の金属ボールは容易に除去で
きる。
In order to achieve this object, the present invention is to form a metal film having good solder wettability on the entire surface of a chip and then heat and melt it to form a metal ball shape on the surface of the chip body. Then, a metal layer having good solder wettability is formed only on the surface of the terminal electrode, and the metal ball is removed.
When the metal film is heated and melted, it is not compatible with the element body on the surface of the element body, becomes spherical due to the surface tension, and is alloyed with the base metal on the surface of the terminal electrode to form a metal layer having good solder wettability. Therefore, the metal balls on the surface of the element body can be easily removed.

【0007】[0007]

【発明の実施の形態】本発明の請求項1に記載のチップ
の製造方法は、チップの端子電極の表面にのみ半田濡れ
性の良い金属層を形成する方法で、メッキなどの表面被
覆法によって、チップの全面に半田濡れ性の良い金属皮
膜を形成させ、次いで、気体または液体中にて前記金属
皮膜をその融点以上に加熱・溶融させ、前記チップの素
体表面に付着した前記金属皮膜は金属ボール状にし、後
工程で除去し、チップの端子電極上のみに半田濡れ性の
良い金属層を形成するものである。
The method for manufacturing a chip according to claim 1 of the present invention is a method of forming a metal layer having good solder wettability only on the surface of a terminal electrode of the chip, and by a surface coating method such as plating. , A metal film having good solder wettability is formed on the entire surface of the chip, and then the metal film is heated and melted in a gas or a liquid at a temperature equal to or higher than its melting point, and the metal film adhered to the surface of the element body of the chip is It is formed into a metal ball shape and is removed in a later step to form a metal layer having good solder wettability only on the terminal electrode of the chip.

【0008】本発明の請求項2に記載の発明は、半田濡
れ性の良い金属皮膜を付与したチップを、温度勾配を設
けた高沸点液体中を高温から低温側に移動させて、高温
側で前記金属皮膜を溶融しチップの素体表面では金属ボ
ール状に、端子電極表面では下地金属と合金化した金属
層を形成し、低温側で冷却固化後、素体表面の金属ボー
ルを超音波洗浄で除去するものであり、素体表面では素
体との馴染み性が悪くその表面張力により金属ボール状
になるため、超音波洗浄で容易に除去できる。
According to a second aspect of the present invention, a chip provided with a metal film having a good solder wettability is moved from a high temperature to a low temperature side in a high boiling point liquid having a temperature gradient so that the chip is kept at the high temperature side. The metal film is melted to form a metal ball on the surface of the chip body, and a metal layer alloyed with the base metal is formed on the surface of the terminal electrode. After cooling and solidification on the low temperature side, the metal ball on the surface of the body is ultrasonically cleaned. The surface of the element body is poorly compatible with the element body and becomes a metal ball shape due to its surface tension, so that it can be easily removed by ultrasonic cleaning.

【0009】本発明の請求項3に記載の発明は、素体の
比抵抗が500Ω・cm以下のサーミスタ材料であり、素
体の比抵抗が低い場合においても、耐半田メッキ性の特
殊なコーティング処理することなしに、チップ端子電極
上のみに半田濡れ性の良い金属層を形成できる。
The invention according to claim 3 of the present invention is a thermistor material in which the resistivity of the element body is 500 Ω · cm or less, and even if the resistivity of the element body is low, a special coating having solder plating resistance is provided. A metal layer having good solder wettability can be formed only on the chip terminal electrodes without processing.

【0010】以下、本発明の一実施形態を図1〜図3を
用いて説明する。図1は本発明によるチップの一部切欠
斜視図、図2はチップ全体に半田濡れ性の良い金属皮膜
を形成した断面図、図3は金属皮膜の溶融装置の一例を
示す図である。図1に示すチップの構成要素は図4に示
した従来製品と基本的には同じであるが素体1の表面に
はガラス層2が設けられていない。図3において、7は
チップサーミスタ、8はガラス円筒、9は高沸点加熱溶
媒、10はマントルヒーター、11はパーツフィーダー
を示す。尚、本実施の形態1はサーミスタ材料を使用し
たチップサーミスタを例に説明を行う。
An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a partially cutaway perspective view of a chip according to the present invention, FIG. 2 is a sectional view in which a metal film having good solder wettability is formed on the entire chip, and FIG. 3 is a view showing an example of a metal film melting device. The components of the chip shown in FIG. 1 are basically the same as those of the conventional product shown in FIG. 4, but the glass layer 2 is not provided on the surface of the element body 1. In FIG. 3, 7 is a chip thermistor, 8 is a glass cylinder, 9 is a high boiling point heating solvent, 10 is a mantle heater, and 11 is a parts feeder. The first embodiment will be described by taking a chip thermistor using a thermistor material as an example.

【0011】先ず、比抵抗20Ω・cmのサーミスタ材料
とバインダーを混練した坏土を、0.5mm厚みのシート
状に押出成形後、所定の寸法に切断し、1300℃の温
度で焼成を行い板状サーミスタとした。前記板状サーミ
スタを2.0mm×1.25mmの寸法に切断してチップサ
ーミスタの素体1を得た。前記素体1の両端面にディッ
プ方式でAgペーストを塗布し800℃で焼付し端子電
極4を形成する。その表面に電解バレルメッキ法により
半田濡れ性の良い金属皮膜(半田膜)を形成した。この
場合チップサーミスタの素体1の比抵抗が20Ω・cmと
低いため、図2のごとく金属皮膜3は前記素体1および
端子電極4の全面に形成される、その状態を図2に示
す。次に図3に示す溶融装置を用い、前記金属皮膜3の
加熱溶融を行った。溶融装置の構造は長さ150cm、内
径5cmのガラス製の筒状容器8を縦型に設置し、下部に
製品取り出し口が設けられている。この筒状容器8の中
に加熱溶媒9(以降グリセリンと称する)を入れ、前記
筒状容器8を上部外周に設けたマントルヒーター10で
加熱し、前記筒状容器8の上面開口部よりチップサーミ
スタ7をパーツフィーダー11で投入し、前記チップサ
ーミスタ7の素体1表面の金属皮膜3を溶融する。その
方法は前記ガラス製の筒状容器8の上部のみをマントル
ヒーター10で200〜280℃に加熱する。従って筒
状容器8内のグリセリン9は筒状容器8の上部だけで対
流を繰り返し、下部は室温に近い温度で保たれている。
この状態で前記筒状容器8の上部より投入されたチップ
サーミスタ7は200℃以上の温度に加熱され、その表
面の金属皮膜3は溶融し端子電極4表面では下地金属と
合金化し半田濡れ性の良い金属層5を形成し、素体1表
面では溶融金属の表面張力により端子電極4側に集まる
か、または素体1表面で金属ボールになる。その後グリ
セリン9の中を徐々に自重で落下しながら冷却固化され
る。このためチップサーミスタ7同士がくっつくことな
く筒状容器8下部より取り出せる。冷却後チップサーミ
スタ7の素体1表面にできた金属ボールは超音波洗浄で
容易に除去できる。これによってチップサーミスタ7の
素体1表面より金属皮膜3が除去され、端子電極4表面
には半田濡れ性の良い金属層5が形成できる。
First, a kneaded material obtained by kneading a thermistor material having a specific resistance of 20 Ω · cm and a binder is extruded into a sheet having a thickness of 0.5 mm, cut into a predetermined size, and fired at a temperature of 1300 ° C. The thermistor. The plate thermistor was cut into a size of 2.0 mm × 1.25 mm to obtain a chip thermistor element body 1. Ag paste is applied to both end faces of the element body 1 by a dip method and baked at 800 ° C. to form the terminal electrodes 4. A metal film (solder film) having good solder wettability was formed on the surface by electrolytic barrel plating. In this case, since the specific resistance of the element body 1 of the chip thermistor is as low as 20 Ω · cm, the metal film 3 is formed on the entire surface of the element body 1 and the terminal electrode 4 as shown in FIG. Next, the metal film 3 was heated and melted using the melting device shown in FIG. The structure of the melting apparatus is such that a glass cylindrical container 8 having a length of 150 cm and an inner diameter of 5 cm is installed vertically, and a product outlet is provided at the bottom. A heating solvent 9 (hereinafter referred to as glycerin) is put in the cylindrical container 8, and the cylindrical container 8 is heated by a mantle heater 10 provided on the outer periphery of the upper part, and a chip thermistor is opened from the upper opening of the cylindrical container 8. 7 is put into the parts feeder 11 to melt the metal film 3 on the surface of the element body 1 of the chip thermistor 7. In the method, only the upper portion of the glass cylindrical container 8 is heated to 200 to 280 ° C. by the mantle heater 10. Therefore, the glycerin 9 in the cylindrical container 8 repeats convection only in the upper part of the cylindrical container 8, and the lower part is kept at a temperature close to room temperature.
In this state, the chip thermistor 7 charged from the upper part of the cylindrical container 8 is heated to a temperature of 200 ° C. or higher, the metal film 3 on the surface thereof is melted, and the surface of the terminal electrode 4 is alloyed with the base metal to prevent solder wettability. A good metal layer 5 is formed, and the surface of the element body 1 gathers on the terminal electrode 4 side due to the surface tension of the molten metal, or becomes a metal ball on the surface of the element body 1. Then, it is cooled and solidified while gradually falling in the glycerin 9 by its own weight. Therefore, the chip thermistors 7 can be taken out from the lower portion of the cylindrical container 8 without sticking to each other. After cooling, the metal balls formed on the surface of the element body 1 of the chip thermistor 7 can be easily removed by ultrasonic cleaning. As a result, the metal film 3 is removed from the surface of the element body 1 of the chip thermistor 7, and the metal layer 5 having good solder wettability can be formed on the surface of the terminal electrode 4.

【0012】尚、本実施例では、端子電極4にAgを用
いたがCu、AgとPdの合金、Pd、Au、ZnやN
iなどを含有する電極材料を用いても、また、半田濡れ
性の良い金属皮膜3に半田を用いたがこれも半田以外
の、SnやInなど比較的低温で溶融する半田濡れ性の
良い金属であれば同様な結果が得られる。金属皮膜3の
形成方法もメッキに制限されることなく、真空蒸着やス
パッタや塗装などの工法が使用可能である。また更に金
属皮膜3の加熱溶媒も同様に高沸点であればグリセリン
9以外も使用可能である。さらに液体の代わりに気体中
で処理を行う場合はチップサーミスタ7が重なり合わな
い横型の加熱装置を用いる必要がある。
Although Ag is used for the terminal electrode 4 in this embodiment, Cu, an alloy of Ag and Pd, Pd, Au, Zn and N are used.
Even if an electrode material containing i or the like is used, and solder is used for the metal film 3 having good solder wettability, this is also a metal other than solder having good solder wettability, such as Sn or In, which melts at a relatively low temperature. If so, similar results are obtained. The method for forming the metal film 3 is not limited to plating, and methods such as vacuum deposition, sputtering and painting can be used. Further, as the heating solvent for the metal film 3, similarly, other than glycerin 9 can be used as long as it has a high boiling point. Further, when the treatment is performed in a gas instead of the liquid, it is necessary to use a horizontal heating device in which the chip thermistors 7 do not overlap each other.

【0013】[0013]

【発明の効果】以上のように、本発明によると、従来の
ようにチップ素体表面を耐メッキ性の特殊なコーティン
グ層を形成することなしに端子電極の表面のみに半田濡
れ性の良好な金属層を有するチップ型電子部品の製造が
可能になる。
As described above, according to the present invention, good solder wettability can be achieved only on the surface of the terminal electrode without forming a special plating-resistant coating layer on the surface of the chip body as in the prior art. It becomes possible to manufacture a chip-type electronic component having a metal layer.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態のチップ型電子部品の一部
切欠斜視図
FIG. 1 is a partially cutaway perspective view of a chip-type electronic component according to an embodiment of the present invention.

【図2】同チップ型電子部品に金属皮膜を形成した断面
FIG. 2 is a cross-sectional view of a metal film formed on the chip type electronic component.

【図3】同金属皮膜の加熱溶融装置の概略構成を示す断
面図
FIG. 3 is a sectional view showing a schematic configuration of a heating and melting apparatus for the metal coating.

【図4】従来のチップ型電子部品の一部切欠斜視図FIG. 4 is a partially cutaway perspective view of a conventional chip-type electronic component.

【符号の説明】[Explanation of symbols]

1 素体 3 金属皮膜 4 端子電極 5 金属層 7 チップサーミスタ 8 筒状容器 9 加熱溶媒 10 マントルヒーター 11 パーツフィーダー 1 Element body 3 Metal film 4 Terminal electrode 5 Metal layer 7 Chip thermistor 8 Cylindrical container 9 Heating solvent 10 Mantle heater 11 Parts feeder

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 チップ型電子部品の両端面に形成された
端子電極の表面に半田に対して濡れ性の良好な金属層を
形成する方法であって、チップ型電子部品の全面に半田
に対して濡れ性の良好な金属皮膜をメッキ、塗装、真空
蒸着やスパッタなどの表面被覆法によって形成し、次に
気体または液体中にて前記金属皮膜をその融点以上に加
熱して溶融させ、前記チップ型電子部品の素体部分に付
着した前記金属皮膜を除去すると共に前記端子電極上に
半田に対して濡れ性の良好な金属層を形成することを特
徴とするチップ型電子部品の製造方法。
1. A method of forming a metal layer having good wettability with respect to solder on the surfaces of terminal electrodes formed on both end surfaces of the chip type electronic component, the method comprising: To form a metal film having good wettability by a surface coating method such as plating, coating, vacuum deposition or sputtering, and then heating the metal film in a gas or liquid to a temperature above its melting point to melt the chip. A method for manufacturing a chip-type electronic component, comprising: removing the metal coating adhered to a body portion of the mold electronic component and forming a metal layer having good wettability with respect to solder on the terminal electrode.
【請求項2】 半田濡れ性の良い金属皮膜を全面に付与
したチップ型電子部品を、温度勾配を設けた高沸点液体
中を高温から低温側に移動させて、高温側で前記金属皮
膜を溶融しチップ型電子部品の素体表面では金属ボール
状に、端子電極表面では合金化した金属層を形成し、低
温側で冷却固化後、素体表面の金属ボールを超音波洗浄
で除去する請求項1記載のチップ型電子部品の製造方
法。
2. A chip-type electronic component provided with a metal film having good solder wettability on the entire surface is moved from a high temperature to a low temperature in a high boiling point liquid having a temperature gradient, and the metal film is melted on the high temperature side. A metal ball is formed on the surface of the base body of the chip-type electronic component, and an alloyed metal layer is formed on the surface of the terminal electrode. After cooling and solidification on the low temperature side, the metal ball on the surface of the base body is removed by ultrasonic cleaning. 1. A method for manufacturing a chip-type electronic component according to 1.
【請求項3】 チップ型電子部品の素体が、素体比抵抗
が500Ω・cm以下のサーミスタ材料よりなる請求項1
または2記載のチップ型電子部品の製造方法。
3. The element body of the chip-type electronic component is made of a thermistor material having an element body specific resistance of 500 Ω · cm or less.
Alternatively, the method for manufacturing the chip-type electronic component according to the item 2.
JP1144496A 1996-01-26 1996-01-26 Method for manufacturing chip electronic component Withdrawn JPH09205002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1144496A JPH09205002A (en) 1996-01-26 1996-01-26 Method for manufacturing chip electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1144496A JPH09205002A (en) 1996-01-26 1996-01-26 Method for manufacturing chip electronic component

Publications (1)

Publication Number Publication Date
JPH09205002A true JPH09205002A (en) 1997-08-05

Family

ID=11778275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1144496A Withdrawn JPH09205002A (en) 1996-01-26 1996-01-26 Method for manufacturing chip electronic component

Country Status (1)

Country Link
JP (1) JPH09205002A (en)

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