JPH09197652A - Pellicle and photomask with pellicle - Google Patents
Pellicle and photomask with pellicleInfo
- Publication number
- JPH09197652A JPH09197652A JP771596A JP771596A JPH09197652A JP H09197652 A JPH09197652 A JP H09197652A JP 771596 A JP771596 A JP 771596A JP 771596 A JP771596 A JP 771596A JP H09197652 A JPH09197652 A JP H09197652A
- Authority
- JP
- Japan
- Prior art keywords
- pellicle
- photomask
- reticle
- frame
- pellicle frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は例えば半導体集積回
路等の製造工程で、回路パターンの転写に用いられるペ
リクル付きフォトマスクおよびペリクルに関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask with a pellicle and a pellicle used for transferring a circuit pattern in a manufacturing process of, for example, a semiconductor integrated circuit.
【０００２】[0002]
【従来の技術】ステップ・アンド・リピート方式の縮小
投影露光装置、いわゆるステッパは半導体集積回路製造
のリソグラフィ工程で中心的役割を担っている。近年、
素子の微細化が進み、集積度が増すにつれフォトマスク
（以下、レチクルとも呼ぶ）上の異物の転写が問題とな
っている。そこで、異物の転写を防止する方法としてペ
リクルの使用が一部で始まっている。2. Description of the Related Art A step-and-repeat reduction projection exposure apparatus, a so-called stepper, plays a central role in a lithography process for manufacturing a semiconductor integrated circuit. recent years,
As the device becomes finer and the degree of integration increases, transfer of foreign matter on a photomask (hereinafter, also referred to as a reticle) becomes a problem. Therefore, the use of pellicles has begun in part as a method of preventing the transfer of foreign matter.
【０００３】従来のペリクルについて図４を参照して説
明する。従来のペリクルは金属、例えばアルミニウム合
金でできたペリクル枠１の表面にニトロセルロース等の
透光性薄膜２を貼り、レチクル３上に接着剤を用いて固
定している。このとき、ペリクル枠１と透明薄膜２とレ
チクル３で囲まれた空間４には空気が入っている。空気
には水分が含まれているため、ペリクル付きレチクルを
長期間使用していると、レチクル３の製造工程で使用さ
れてその表面に極めて微量ではあるが付着している硫酸
等の残留物と反応し、レチクル３の表面が白濁すること
がある。レチクル表面が劣化すると、レチクルの位置に
より光透過強度が異なるため、露光量にむらが生じる。
また、ハーフトーン位相シフトマスクを用いた場合には
シフタが残留物と化学反応を起こし、シフタの初期の位
相シフト量や透過率が変動してしまう。A conventional pellicle will be described with reference to FIG. In a conventional pellicle, a translucent thin film 2 such as nitrocellulose is attached to the surface of a pellicle frame 1 made of a metal, for example, an aluminum alloy, and fixed on a reticle 3 with an adhesive. At this time, air enters the space 4 surrounded by the pellicle frame 1, the transparent thin film 2 and the reticle 3. Since air contains moisture, if a reticle with a pellicle is used for a long period of time, it may be used in the manufacturing process of the reticle 3, and the residue such as sulfuric acid, etc., which is attached to the surface of the reticle 3 in a very small amount, The reaction may occur and the surface of the reticle 3 may become cloudy. When the surface of the reticle deteriorates, the light transmission intensity varies depending on the position of the reticle, so that the exposure amount varies.
Further, when the halftone phase shift mask is used, the shifter causes a chemical reaction with the residue, and the initial phase shift amount and transmittance of the shifter change.
【０００４】この問題を解決するために、ペリクル枠に
乾燥剤を収納したペリクルが特開平４−２６９７５２号
公報に提案されている。この発明により空気中の水分を
除去することは可能である。In order to solve this problem, a pellicle in which a desiccant is contained in a pellicle frame is proposed in JP-A-4-269752. According to the present invention, it is possible to remove the water content in the air.
【０００５】[0005]
【発明が解決しようとする課題】ステッパの解像力を向
上させるためには光源の波長を短波長化するのが有効で
ある。そこでＫｒＦエキシマレーザ（波長２４８ｎｍ）
やＡｒＦエキシマレーザ（波長１９３ｎｍ）を光源とす
るステッパが注目されている。光源の候補としては、こ
の他にＦ2 エキシマレーザ（波長１５７ｎｍ）やＸｅ2
エキシマランプ（波長１７２ｎｍ）も検討されている。
ところが、光の波長が２００ｎｍ以下になると空気中に
含まれる酸素による光の吸収が無視出来なくなる。光の
吸収は透過率を落とすとともに、発生したオゾンにより
レチクル表面を劣化させる。In order to improve the resolution of the stepper, it is effective to shorten the wavelength of the light source. Therefore, KrF excimer laser (wavelength 248 nm)
A stepper using an ArF excimer laser (wavelength 193 nm) as a light source has been receiving attention. Other candidates for the light source include F 2 excimer laser (wavelength 157 nm) and Xe 2
Excimer lamps (wavelength 172 nm) are also under consideration.
However, when the wavelength of light is 200 nm or less, absorption of light by oxygen contained in the air cannot be ignored. The absorption of light lowers the transmittance and deteriorates the surface of the reticle due to the generated ozone.
【０００６】また、光の波長が１８０ｎｍ以下になると
従来レチクル基板として用いられていた合成石英の代わ
りにＣａＦ2 またはＭｇＦ2 を用いる必要がある。これ
らの材料は合成石英に比べ潮解性が高く、化学変化もお
こし易いため、レチクルの劣化も激しくなる。Further, when the wavelength of light becomes 180 nm or less, it is necessary to use CaF 2 or MgF 2 instead of synthetic quartz which has been conventionally used as a reticle substrate. These materials have higher deliquescent properties than synthetic quartz and are prone to chemical changes, so the reticle deteriorates more severely.
【０００７】本発明の課題は、以上の点に鑑み、ペリク
ルとレチクルで囲まれた空間に存在する空気中の水分お
よび酸素により生じるレチクル表面の劣化を低減するペ
リクル付きフォトマスクおよびペリクルを提供すること
である。In view of the above points, an object of the present invention is to provide a photomask with a pellicle and a pellicle for reducing deterioration of the reticle surface caused by moisture and oxygen in the air existing in the space surrounded by the pellicle and the reticle. That is.
【０００８】[0008]
【課題を解決するための手段】本発明によれば、ペリク
ル枠の表面に透光性薄膜を展着したペリクルにおいて、
前記ペリクル枠は、気体を注入あるいは排気するための
少なくとも１つの通気孔と、該通気孔を封止するための
栓を有していることを特徴とするペリクルが得られる。According to the present invention, in a pellicle having a translucent thin film spread on the surface of a pellicle frame,
A pellicle is obtained in which the pellicle frame has at least one vent hole for injecting or exhausting gas and a plug for sealing the vent hole.
【０００９】又、本発明によれば、ペリクル枠の表面に
透光性薄膜を展着したペリクルにおいて、前記ペリクル
枠がフォトマスクを前記ペリクル枠内部に装着できるよ
うに表裏一体型として形成されていることを特徴とする
ペリクルが得られる。Further, according to the present invention, in a pellicle in which a translucent thin film is spread on the surface of a pellicle frame, the pellicle frame is formed as a front and back integrated type so that a photomask can be mounted inside the pellicle frame. A pellicle characterized by being present is obtained.
【００１０】さらに、本発明によれば、前記ペリクル枠
に、気体を通し、塵を排除するフィルタ付きの開口部を
有していることを特徴とするペリクルが得られる。Further, according to the present invention, there is obtained a pellicle characterized in that the pellicle frame has an opening portion with a filter for passing gas and removing dust.
【００１１】又、本発明によれば、前記ペリクルを、フ
ォトマスクの表面あるいは裏面の少なくとも一方に装着
したペリクル付きフォトマスクであって、前記ペリクル
枠と前記透光性薄膜と前記フォトマスクとで囲まれた空
間内を水及び酸素を含まない気体で満たしたことを特徴
とするペリクル付きフォトマスクが得られる。Further, according to the present invention, there is provided a pellicle-equipped photomask in which the pellicle is mounted on at least one of a front surface and a back surface of the photomask, wherein the pellicle frame, the light-transmitting thin film, and the photomask. A photomask with a pellicle characterized in that the enclosed space is filled with a gas containing neither water nor oxygen is obtained.
【００１２】さらに、本発明によれば、前記気体が窒素
であることを特徴とするペリクル付きフォトマスクが得
られる。Further, according to the present invention, there is obtained a photomask with a pellicle characterized in that the gas is nitrogen.
【００１３】[0013]
【発明の実施の形態】本発明のペリクル付きフォトマス
クの一実施の形態について図１を参照して説明する。ペ
リクル枠１の側面には通気孔６と栓７とが付属してい
る。レチクル（フォトマスク）３にペリクルを接着剤を
用いて装着した後に、通気孔６を通して水および酸素を
含まない気体５、例えば窒素を吹き込み、レチクル枠１
と透光性薄膜２とレチクル３で囲まれた空間を満たして
いる。窒素は水分を含まないため、硫酸等のフォトマス
ク製造工程の残留物と化学反応を引き起こさない。Ｃａ
Ｆ2 やＭｇＦ2 をレチクル基板として用いても潮解する
ことは無い。また、窒素は酸素よりも真空紫外域での透
過率が高く、短波長光源を用いても光の吸収やオゾンの
発生の発生を引き起こさない。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a photomask with a pellicle of the present invention will be described with reference to FIG. A vent hole 6 and a plug 7 are attached to the side surface of the pellicle frame 1. After mounting the pellicle on the reticle (photomask) 3 with an adhesive, a gas 5 containing no water and oxygen, for example, nitrogen is blown through the vent hole 6 to make the reticle frame 1
And fills the space surrounded by the translucent thin film 2 and the reticle 3. Since nitrogen does not contain water, it does not cause a chemical reaction with the residues of the photomask manufacturing process such as sulfuric acid. Ca
Even if F 2 or MgF 2 is used as the reticle substrate, it does not deliquesce. Nitrogen has a higher transmittance in the vacuum ultraviolet region than oxygen, and does not cause light absorption or ozone generation even when a short wavelength light source is used.
【００１４】次に本発明のペリクル付きフォトマスクの
他の実施の形態について図２を参照して説明する。ペリ
クル枠は表裏一体となっているためレチクル３を装着す
る際に接着剤を用いる必要が無く、ペリクル枠１の一側
面をふさぐための蓋８を閉じる構造になっている。接着
剤を用いる場合に比べ気密性が高く、内部からの気体の
漏れを防ぐことができる。本実施の形態もペリクル枠１
の側面には通気孔６と栓７とが付属している。Next, another embodiment of the photomask with a pellicle of the present invention will be described with reference to FIG. Since the pellicle frame is integrated into the front and back, it is not necessary to use an adhesive when mounting the reticle 3, and the lid 8 for closing one side surface of the pellicle frame 1 is closed. Airtightness is higher than when an adhesive is used, and it is possible to prevent gas from leaking from the inside. This embodiment also uses the pellicle frame 1
A vent hole 6 and a plug 7 are attached to the side surface of the.
【００１５】次に、本発明のペリクル付きフォトマスク
のさらに他の実施の形態について図３を参照して説明す
る。ペリクル枠１には気体を注入あるいは排気するため
の開口部９が形成されている。この開口部９には、塵を
排除するためのフィルター１０が取り付けられている。
従って、ペリクル枠１と透光性薄膜２とレチクル３で囲
まれた空間の通気性が確保されている。２００ｎｍより
短波長な光源、例えばＡｒＦエキシマレーザをステッパ
の光源として用いる場合には、光の吸収を減らすために
ステッパ内部を窒素で満たす必要がある。図３のペリク
ル付きフォトマクスをステッパに入れると、ペリクル枠
１と透光性薄膜２とレチクル３で囲まれた空間中の空気
は急速に窒素に置換される。Next, still another embodiment of the photomask with a pellicle of the present invention will be described with reference to FIG. An opening 9 for injecting or exhausting gas is formed in the pellicle frame 1. A filter 10 for removing dust is attached to the opening 9.
Therefore, the air permeability of the space surrounded by the pellicle frame 1, the translucent thin film 2 and the reticle 3 is ensured. When a light source having a wavelength shorter than 200 nm, for example, an ArF excimer laser is used as the light source of the stepper, it is necessary to fill the inside of the stepper with nitrogen in order to reduce light absorption. When the photomask with a pellicle shown in FIG. 3 is put in a stepper, the air in the space surrounded by the pellicle frame 1, the transparent thin film 2 and the reticle 3 is rapidly replaced with nitrogen.
【００１６】[0016]
【発明の効果】本発明のペリクル及びペリクル付きフォ
トマスクを用いれば、ペリクルとレチクルで囲まれた空
間に水や酸素を含まない。このため、短波長の光源を用
いた場合でもオゾンは発生せず、水分やオゾンによるレ
チクル表面の劣化を低減することができる。By using the pellicle and the photomask with a pellicle of the present invention, the space surrounded by the pellicle and the reticle does not contain water or oxygen. Therefore, ozone is not generated even when a light source of short wavelength is used, and deterioration of the reticle surface due to moisture or ozone can be reduced.
【図１】本発明のペリクル付きフォトマスクの一実施の
形態を示した図であり、（ａ）は平面図、（ｂ）は側面
図、（ｃ）は（ａ）のＡ−Ａ線断面図である。1A and 1B are views showing an embodiment of a photomask with a pellicle of the present invention, in which FIG. 1A is a plan view, FIG. 1B is a side view, and FIG. 1C is a sectional view taken along line AA of FIG. It is a figure.
【図２】本発明のペリクル付きフォトマスクの他の実施
の形態を示した図であり、（ａ）は平面図、（ｂ）は側
面図、（ｃ）は（ａ）のＡ−Ａ線断面図である。2A and 2B are views showing another embodiment of the photomask with a pellicle of the present invention, in which FIG. 2A is a plan view, FIG. 2B is a side view, and FIG. 2C is a line AA in FIG. FIG.
【図３】本発明のペリクル付きフォトマスクのさらに他
の実施の形態を示した図であり、（ａ）は平面図、
（ｂ）は側面図、（ｃ）は（ａ）のＡ−Ａ線断面図であ
る。FIG. 3 is a view showing still another embodiment of the photomask with a pellicle of the present invention, (a) is a plan view,
(B) is a side view, (c) is the sectional view on the AA line of (a).
【図４】従来のペリクル付きフォトマスクの構造を示し
た図であり、（ａ）は平面図、（ｂ）は側面図、（ｃ）
は（ａ）のＡ−Ａ線断面図である。4A and 4B are diagrams showing a structure of a conventional photomask with a pellicle, in which FIG. 4A is a plan view, FIG. 4B is a side view, and FIG.
FIG. 7A is a sectional view taken along line AA of FIG.
１ ペリクル枠 ２ 透光性薄膜 ３ レチクル ５ 気体 ６ 通気孔 ７ 栓 ８ 蓋 ９ 開口部 １０ フィルタ 1 Pellicle Frame 2 Light-Transmissive Thin Film 3 Reticle 5 Gas 6 Vent 7 Plug 8 Lid 9 Opening 10 Filter
Claims (5)
たペリクルにおいて、前記ペリクル枠は、気体を注入あ
るいは排気するための少なくとも１つの通気孔と、該通
気孔を封止するための栓を有していることを特徴とする
ペリクル。1. A pellicle having a translucent thin film spread on the surface of a pellicle frame, wherein the pellicle frame has at least one vent hole for injecting or exhausting gas, and for sealing the vent hole. A pellicle having a stopper.
たペリクルにおいて、前記ペリクル枠がフォトマスクを
前記ペリクル枠内部に装着できるように表裏一体型とし
て形成されていることを特徴とするペリクル。2. A pellicle in which a translucent thin film is spread on the surface of a pellicle frame, wherein the pellicle frame is formed as a front and back integrated type so that a photomask can be mounted inside the pellicle frame. Pellicle.
除するフィルタ付きの開口部を有していることを特徴と
する請求項２記載のペリクル。3. The pellicle according to claim 2, wherein the pellicle frame has an opening with a filter that allows gas to pass therethrough and removes dust.
トマスクの表面あるいは裏面の少なくとも一方に装着し
たペリクル付きフォトマスクであって、前記ペリクル枠
と前記透光性薄膜と前記フォトマスクとで囲まれた空間
内を水及び酸素を含まない気体で満たしたことを特徴と
するペリクル付きフォトマスク。4. A photomask with a pellicle in which the pellicle according to claim 1 is mounted on at least one of a front surface and a back surface of a photomask, wherein the pellicle frame, the light-transmissive thin film, and the photomask are combined. A photomask with a pellicle, characterized in that the enclosed space is filled with a gas containing neither water nor oxygen.
請求項４記載のペリクル付きフォトマスク。5. The pellicle-equipped photomask according to claim 4, wherein the gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP771596A JPH09197652A (en) | 1996-01-19 | 1996-01-19 | Pellicle and photomask with pellicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP771596A JPH09197652A (en) | 1996-01-19 | 1996-01-19 | Pellicle and photomask with pellicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09197652A true JPH09197652A (en) | 1997-07-31 |
Family
ID=11673444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP771596A Pending JPH09197652A (en) | 1996-01-19 | 1996-01-19 | Pellicle and photomask with pellicle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09197652A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049366A1 (en) * | 1998-03-20 | 1999-09-30 | Nikon Corporation | Photomask and projection exposure system |
| WO2001059522A1 (en) * | 2000-02-10 | 2001-08-16 | Asml Us, Inc. | Method and apparatus for a reticle with purged pellicle-to-reticle gap |
| US6614504B2 (en) | 2000-03-30 | 2003-09-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US6665049B1 (en) * | 1999-08-10 | 2003-12-16 | Nikon Corporation | Photomask, method for manufacturing the same, projection aligner using the photomask, and projection exposing method |
| US6762821B2 (en) * | 2001-06-18 | 2004-07-13 | Canon Kabushiki Kaisha | Gas purge method and exposure apparatus |
| US6788392B2 (en) | 2000-11-16 | 2004-09-07 | Canon Kabushiki Kaisha | Exposure apparatus, device manufacturing method, gas substituting apparatus, and gas substituting method |
| US6791661B2 (en) | 1999-12-09 | 2004-09-14 | Nikon Corporation | Gas replacement method and apparatus, and exposure method and apparatus |
| US6803996B2 (en) | 2001-12-04 | 2004-10-12 | Canon Kabushiki Kaisha | Device manufacturing-related apparatus, gas purge method, and device manufacturing method |
| US6833903B2 (en) | 2002-02-05 | 2004-12-21 | Canon Kabushiki Kaisha | Inert gas purge method and apparatus, exposure apparatus, reticle stocker, reticle inspection apparatus, reticle transfer box, and device manufacturing method |
| US7068347B2 (en) * | 2002-12-20 | 2006-06-27 | Intel Corporation | Apparatus for reducing pellicle darkening |
| KR100746864B1 (en) * | 1999-11-08 | 2007-08-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Framed pellicle for protection of photolithographic photomask |
| CN111913346A (en) * | 2020-08-25 | 2020-11-10 | 泉芯集成电路制造(济南)有限公司 | Photomask assembly and photoetching system |
-
1996
- 1996-01-19 JP JP771596A patent/JPH09197652A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6627365B1 (en) | 1998-03-20 | 2003-09-30 | Nikon Corporation | Photomask and projection exposure apparatus |
| WO1999049366A1 (en) * | 1998-03-20 | 1999-09-30 | Nikon Corporation | Photomask and projection exposure system |
| US6665049B1 (en) * | 1999-08-10 | 2003-12-16 | Nikon Corporation | Photomask, method for manufacturing the same, projection aligner using the photomask, and projection exposing method |
| KR100746864B1 (en) * | 1999-11-08 | 2007-08-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Framed pellicle for protection of photolithographic photomask |
| US6791661B2 (en) | 1999-12-09 | 2004-09-14 | Nikon Corporation | Gas replacement method and apparatus, and exposure method and apparatus |
| WO2001059522A1 (en) * | 2000-02-10 | 2001-08-16 | Asml Us, Inc. | Method and apparatus for a reticle with purged pellicle-to-reticle gap |
| US6614504B2 (en) | 2000-03-30 | 2003-09-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US6788392B2 (en) | 2000-11-16 | 2004-09-07 | Canon Kabushiki Kaisha | Exposure apparatus, device manufacturing method, gas substituting apparatus, and gas substituting method |
| US6762821B2 (en) * | 2001-06-18 | 2004-07-13 | Canon Kabushiki Kaisha | Gas purge method and exposure apparatus |
| US6803996B2 (en) | 2001-12-04 | 2004-10-12 | Canon Kabushiki Kaisha | Device manufacturing-related apparatus, gas purge method, and device manufacturing method |
| US6833903B2 (en) | 2002-02-05 | 2004-12-21 | Canon Kabushiki Kaisha | Inert gas purge method and apparatus, exposure apparatus, reticle stocker, reticle inspection apparatus, reticle transfer box, and device manufacturing method |
| US7068347B2 (en) * | 2002-12-20 | 2006-06-27 | Intel Corporation | Apparatus for reducing pellicle darkening |
| CN111913346A (en) * | 2020-08-25 | 2020-11-10 | 泉芯集成电路制造(济南)有限公司 | Photomask assembly and photoetching system |
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