JPH09194283A - Apparatus for pulling up single crystal - Google Patents
Apparatus for pulling up single crystalInfo
- Publication number
- JPH09194283A JPH09194283A JP8004405A JP440596A JPH09194283A JP H09194283 A JPH09194283 A JP H09194283A JP 8004405 A JP8004405 A JP 8004405A JP 440596 A JP440596 A JP 440596A JP H09194283 A JPH09194283 A JP H09194283A
- Authority
- JP
- Japan
- Prior art keywords
- supply pipe
- hole
- main body
- single crystal
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、単結晶引上装置に
係わり、特に、粒状半導体原料の供給を改善した単結晶
引上装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal pulling apparatus, and more particularly to a single crystal pulling apparatus with improved supply of granular semiconductor raw material.
【０００２】[0002]
【従来の技術】従来から、シリコン（Ｓｉ）やガリウム
ヒ素（ＧａＡｓ）等の半導体単結晶を成長させる方法と
してＣＺ法が知られている。このＣＺ法は、ルツボで半
導体原料を半導体融液とし、この半導体融液から半導体
単結晶を引き上げながら成長させるものである。また、
ＣＺ法の一つには、例えば、特開平６−１８０５２１公
報に示すように、半導体単結晶を成長させている過程
で、粒状半導体原料を補充するものが提案されている。
図６は、そのようなＣＺ法を用いた単結晶引上装置１を
示す図であり、この単結晶引上装置１は、粒状半導体原
料を連続的に補充するものである。2. Description of the Related Art The CZ method has been conventionally known as a method for growing a semiconductor single crystal such as silicon (Si) or gallium arsenide (GaAs). In this CZ method, a semiconductor raw material is used as a semiconductor melt in a crucible, and a semiconductor single crystal is pulled up from this semiconductor melt and grown. Also,
As one of the CZ methods, for example, as disclosed in Japanese Patent Laid-Open No. 6-180521, there is proposed a method of supplementing a granular semiconductor raw material in the process of growing a semiconductor single crystal.
FIG. 6 is a diagram showing a single crystal pulling apparatus 1 using such a CZ method, and the single crystal pulling apparatus 1 continuously replenishes a granular semiconductor raw material.
【０００３】まず、単結晶引上装置１の概略構成を説明
する。単結晶引上装置１は、半導体原料として多結晶半
導体の塊りを砕いた原料や粒状半導体原料Ｓｃ１を貯留
するルツボ３と、ルツボ３を加熱して半導体原料を半導
体融液Ｓｃ２とする加熱器４と、半導体融液Ｓｃ２から
半導体単結晶Ｓｃ３を引き上げる単結晶引上機構５と、
ルツボ３、加熱器４、単結晶引上機構５を気密状態に包
囲する気密容器６と、ルツボ３に粒状半導体原料Ｓｃ１
を供給する原料供給管７とを備えている。この原料供給
管７は、気密容器６内に配置される内設管８と気密容器
６外に配置される外設管部９とからなっている。内設管
８は石英製であり、図９に示すように、内設管８の内部
には、下方に向けて千鳥状に配置され、粒状半導体原料
Ｓｃ１の流下速度を低下させる多数の邪魔板８ａが設け
られている。内設管８の上端部８ｂは、その下部に比し
て口径が拡径された円筒状を成しており、上端部８ｂの
外面の段をなす下端には、係止面８ｃが形成されてい
る。First, a schematic structure of the single crystal pulling apparatus 1 will be described. The single crystal pulling apparatus 1 includes a crucible 3 for storing a raw material obtained by crushing a lump of a polycrystalline semiconductor or a granular semiconductor raw material Sc1 as a semiconductor raw material, and a heater for heating the crucible 3 to turn the semiconductor raw material into a semiconductor melt Sc2. 4, and a single crystal pulling mechanism 5 for pulling up the semiconductor single crystal Sc3 from the semiconductor melt Sc2,
An airtight container 6 that encloses the crucible 3, the heater 4, and the single crystal pulling mechanism 5 in an airtight state, and the crucible 3 has a granular semiconductor raw material Sc1.
And a raw material supply pipe 7 for supplying. The raw material supply pipe 7 includes an inner pipe 8 arranged inside the airtight container 6 and an outer pipe portion 9 arranged outside the airtight container 6. The inner pipe 8 is made of quartz, and as shown in FIG. 9, a large number of baffle plates are arranged inside the inner pipe 8 in a zigzag pattern downward to reduce the flow rate of the granular semiconductor raw material Sc1. 8a is provided. The upper end portion 8b of the inner pipe 8 has a cylindrical shape with a larger diameter than the lower portion thereof, and a locking surface 8c is formed at the lower end of the outer surface of the upper end portion 8b which is a step. ing.
【０００４】図６のルツボ３は、略半球状の石英（Ｓｉ
Ｏ2）製の外ルツボ１１と、外ルツボ１１内に立設され
た円筒状の石英（ＳｉＯ2）製の内ルツボ１２とから形
成され、内ルツボ１２の側壁下部には、内ルツボ１２と
外ルツボ１１とを連通する連通孔１３が複数個形成され
ている。また、ルツボ３は、気密容器６の中央下部に垂
直に立設されたシャフト１４上のサセプタ１５に載置さ
れ、シャフト１４の軸線ＣＴを中心として水平面上で所
定の角速度で回転する構成になっている。The crucible 3 shown in FIG. 6 is made of substantially hemispherical quartz (Si).
The inner crucible 12 is made of an outer crucible 11 made of O 2 ) and a cylindrical quartz (SiO 2 ) inner crucible 12 provided upright in the outer crucible 11. A plurality of communication holes 13 that communicate with the outer crucible 11 are formed. Further, the crucible 3 is placed on a susceptor 15 on a shaft 14 which is erected vertically in the lower center of the airtight container 6, and is configured to rotate at a predetermined angular velocity on a horizontal plane about an axis CT of the shaft 14. ing.
【０００５】加熱器４は、半導体原料を外ルツボ１１内
で加熱・融解し、生じた半導体融液Ｓｃ２を保温するも
ので、本実施形態では抵抗加熱ヒーターが用いられてい
る。また、加熱器４の周囲には、保温用のヒートシール
ド１６が設けられている。The heater 4 heats and melts the semiconductor raw material in the outer crucible 11 to keep the resulting semiconductor melt Sc2 warm. In this embodiment, a resistance heater is used. A heat shield 16 for keeping heat is provided around the heater 4.
【０００６】さて、従来、気密容器６は上方に開放され
た容器本体２１とその開放端を閉塞する蓋部２２とから
なり、蓋部２２には、原料供給管７の内設管８を導入す
る貫通孔２３ａを有する供給管導入部２３が形成されて
いる。供給管導入部２３には、供給管止め部である供給
管止め具２５が設けられている。Conventionally, the airtight container 6 is composed of a container body 21 which is opened upward and a lid portion 22 which closes the open end thereof, and the internal pipe 8 of the raw material supply pipe 7 is introduced into the lid portion 22. A supply pipe introducing portion 23 having a through hole 23a is formed. The supply pipe introducing portion 23 is provided with a supply pipe stopper 25 which is a supply pipe stopper.
【０００７】供給管止め具２５は、従来、図８に示す一
対の割型２６、２７と、一対の割型２６、２７が合わせ
られた状態で嵌合される図７の嵌合孔２９ａを有する割
型支持部２９とからなっており、一対の割型２６、２７
は、図８に示すように合わせられた状態でその間に係止
孔２８を形成する。図７に示すように係止孔２８の孔壁
の下部は口径が縮径されており、その段部には、上方に
向いた係止面２８ａが形成されている。係止孔２８に
は、内設管８の上端部８ｂが挿通され嵌合されており、
その上端部８ｂの係止面８ｃは、係止孔２８の孔壁の係
止面２８ａに載置されて係止されている。Conventionally, the supply pipe stopper 25 has a pair of split dies 26 and 27 shown in FIG. 8 and a fitting hole 29a of FIG. 7 into which the pair of split dies 26 and 27 are fitted together. And a pair of split molds 26, 27.
Forms a locking hole 28 between them in the aligned state as shown in FIG. As shown in FIG. 7, the diameter of the lower portion of the hole wall of the locking hole 28 is reduced, and the stepped portion has a locking surface 28a facing upward. The upper end portion 8b of the internal pipe 8 is inserted and fitted into the locking hole 28,
The locking surface 8c of the upper end portion 8b is placed and locked on the locking surface 28a of the hole wall of the locking hole 28.
【０００８】また、内設管８の下部は、図６に示すよう
に、筒状のガイド３１に挿通されており、ガイド３１
は、ヒートシールド１６の上部に設置された環状の取付
部材３２に支持されている。Further, as shown in FIG. 6, the lower portion of the internal pipe 8 is inserted into a cylindrical guide 31, and the guide 31
Are supported by an annular mounting member 32 installed on the heat shield 16.
【０００９】上記粒状半導体原料Ｓｃ１としては、例え
ば、気体原料から熱分解法により粒状に析出させた多結
晶シリコンの顆粒が好適に用いられ、必要に応じてホウ
素（Ｂ）（ｐ型シリコン単結晶を作る場合）やリン
（Ｐ）（ｎ型シリコン単結晶を作る場合）等のドーパン
トと呼ばれる元素を更に添加する。As the granular semiconductor raw material Sc1, for example, polycrystalline silicon granules deposited in a granular form from a gas raw material by a thermal decomposition method are preferably used, and if necessary, boron (B) (p-type silicon single crystal). Element) or phosphorus (P) (when n-type silicon single crystal is produced) or the like, and an element called a dopant is further added.
【００１０】次に、上記単結晶引上装置１を用いて半導
体単結晶Ｓｃ３を形成する方法について説明する。Next, a method for forming the semiconductor single crystal Sc3 by using the single crystal pulling apparatus 1 will be described.
【００１１】まず、半導体原料として多結晶半導体の塊
りを砕いた原料を外ルツボ１１に入れ、蓋部２２の供給
管導入孔２３ａ、及び図７の割型支持部２９の嵌合孔２
９ａを通じて、内設管８の上端部８ｂを割型支持部２９
の上方に突出させる。次に、割型支持部２９の嵌合孔２
９ａに一対の割型２６、２７を合わせて嵌合させると共
に一対の割型２６、２７により形成された係止孔２８に
内設管８の上端部８ｂを係止させる。すると、図６に示
すように内設管８は、その下端をルツボ３の外ルツボ１
１の外縁と内ルツボ１２との間に向けて取り付けられ
る。この内設管８の上端には、外設管部９が接続され
る。蓋部２２を閉じると共に、内設管８をガイド３１に
挿通させて気密容器６の容器本体２１内に配置させる。First, a raw material obtained by crushing a lump of a polycrystalline semiconductor as a semiconductor raw material is put into the outer crucible 11, and the supply pipe introducing hole 23a of the lid portion 22 and the fitting hole 2 of the split die supporting portion 29 of FIG.
The upper end portion 8b of the internal pipe 8 is connected to the split die support portion 29 through 9a.
Project above. Next, the fitting hole 2 of the split mold support 29
A pair of split molds 26, 27 are fitted together to 9a, and an upper end portion 8b of the internal pipe 8 is locked in a locking hole 28 formed by the pair of split molds 26, 27. Then, as shown in FIG. 6, the inner pipe 8 has its lower end at the outer crucible 1 of the crucible 3.
It is attached between the outer edge of 1 and the inner crucible 12. An outer pipe portion 9 is connected to the upper end of the inner pipe 8. The lid 22 is closed, and the internal pipe 8 is inserted into the guide 31 to be placed in the container body 21 of the airtight container 6.
【００１２】次に、ルツボ３を包囲する気密容器６内を
真空ポンプ等で排気して真空状態として、気密容器６内
に雰囲気ガスであるアルゴン（Ａr）等の不活性ガスを
導入し、シャフト１４を軸線ＣＴを中心として定角速度
で水平面上で回転させ、これによりルツボ３を定角速度
で回転させながら、加熱器４に通電し、ルツボ３内の原
料を単結晶成長温度以上の温度まで加熱し、この原料を
融解して、半導体融液Ｓｃ２とする。Next, the airtight container 6 surrounding the crucible 3 is evacuated by a vacuum pump or the like to a vacuum state, and an inert gas such as argon (Ar) which is an atmospheric gas is introduced into the airtight container 6 and the shaft is rotated. 14 is rotated on the horizontal plane at a constant angular velocity about the axis CT, and while the crucible 3 is rotated at a constant angular velocity, the heater 4 is energized to heat the raw material in the crucible 3 to a temperature equal to or higher than the single crystal growth temperature. Then, this raw material is melted to obtain a semiconductor melt Sc2.
【００１３】原料が全て半導体融液Ｓｃ２となった後
に、加熱器４の電力を調整して半導体融液Ｓｃ２の中央
液面付近を単結晶成長温度に保ち、単結晶引上機構５の
引上軸５ａにより吊り下げられた種結晶Ｓｃ４を半導体
融液Ｓｃ２になじませた後、この種結晶Ｓｃ４を定速度
で鉛直上方に引き上げ、この種結晶Ｓｃ４を核として半
導体単結晶Ｓｃ３を成長させる。ここでは、種結晶Ｓｃ
４を無転位化した後にこの単結晶Ｓｃ３の口径を徐々に
大口径化し所定の口径の半導体単結晶Ｓｃ３とする。After all the raw material becomes the semiconductor melt Sc2, the electric power of the heater 4 is adjusted to keep the vicinity of the central liquid surface of the semiconductor melt Sc2 at the single crystal growth temperature, and the single crystal pulling mechanism 5 is pulled up. After the seed crystal Sc4 suspended by the shaft 5a has been soaked in the semiconductor melt Sc2, the seed crystal Sc4 is pulled vertically upward at a constant speed, and the semiconductor single crystal Sc3 is grown with the seed crystal Sc4 as a nucleus. Here, the seed crystal Sc
After making 4 dislocation-free, the diameter of this single crystal Sc3 is gradually increased to obtain a semiconductor single crystal Sc3 having a predetermined diameter.
【００１４】また、この結晶成長過程においては、半導
体単結晶Ｓｃ３の成長量（引上量）に応じて原料供給管
７から粒状半導体原料Ｓｃ１が、ルツボ３の外ルツボ１
１の外縁と内ルツボ１２との間に連続的に入れられ、こ
の粒状半導体原料Ｓｃ１は外ルツボ１１内で融解し連通
孔１３を通って内ルツボ１２内に連続的に供給される。
以上のようにして、結晶性の高い半導体単結晶Ｓｃ３を
成長させることができる。In the crystal growth process, the granular semiconductor raw material Sc1 is fed from the raw material supply pipe 7 to the outer crucible 1 of the crucible 3 according to the growth amount (pulling amount) of the semiconductor single crystal Sc3.
1, the granular semiconductor raw material Sc1 is melted in the outer crucible 11 and continuously supplied into the inner crucible 12 through the communication hole 13.
As described above, the semiconductor single crystal Sc3 having high crystallinity can be grown.
【００１５】[0015]
【発明が解決しようとする課題】しかし、そのような単
結晶引上装置１では、原料供給管７の図７に示す内設管
８の取付作業が、一対の割型２６、２７を係止孔２８を
形成するように互いに合わせると共に割型支持部２９の
嵌合孔２９ａに嵌合させるという煩雑な作業であるとい
う問題がある。また、図６のルツボ３を交換する必要が
生じた場合に、そのルツボ３の大きさに応じて、図１０
に示すような屈曲された特殊な内設管１８で対処しなけ
ればならないという煩雑さがある。更に、半導体単結晶
Ｓｃ３の成長時にその熱で供給管止め具２５を介して内
設管８の上端部８ｂが過熱され、内設管８の寿命を早め
ているという問題がある。However, in such a single crystal pulling apparatus 1, the work of mounting the internal pipe 8 shown in FIG. 7 of the raw material supply pipe 7 locks the pair of split molds 26, 27. There is a problem in that it is a complicated work of fitting the holes 28 to each other and fitting them into the fitting holes 29a of the split mold support 29. Further, when it becomes necessary to replace the crucible 3 shown in FIG. 6, the crucible 3 shown in FIG.
There is a troublesome thing to deal with by using a special bent internal pipe 18 as shown in FIG. Furthermore, there is a problem that the upper end 8b of the internal pipe 8 is overheated by the heat of the growth of the semiconductor single crystal Sc3 via the supply pipe stopper 25, and the life of the internal pipe 8 is shortened.
【００１６】本発明は、上記事情に鑑み、原料供給管の
内設管の取り付けを容易且つ迅速に行なうことができ、
且つまた、ルツボの交換を容易にでき、更に、内設管の
長寿命化を図ることができる単結晶引上装置を提供する
ことを目的としている。In view of the above circumstances, the present invention makes it possible to easily and quickly attach the internal pipe of the raw material supply pipe,
Further, another object of the present invention is to provide a single crystal pulling apparatus capable of easily replacing the crucible and extending the life of the inner pipe.
【００１７】[0017]
【課題を解決するための手段】本発明の第一の発明で
は、半導体原料を貯留するルツボと、ルツボを加熱して
半導体原料を半導体融液とする加熱器と、半導体融液か
ら半導体単結晶を引き上げる単結晶引上機構と、容器本
体と蓋部とからなり、ルツボ、加熱器、単結晶引上機構
を気密状態に包囲する気密容器と、気密容器の蓋部を貫
通してルツボに粒状半導体原料を供給する原料供給管と
を備え、原料供給管は、気密容器内に配置され、拡径さ
れた上端部外面の下端の係止面で係止される内設管を有
し、気密容器の蓋部には、内設管を導入する供給管導入
部が形成され、供給管導入部には、内設管を挿通して係
止する係止孔を有し、その孔壁に上方に向いた係止面が
形成された供給管止め部が設けられている単結晶引上装
置であって、供給管止め部には、係止孔に隣接して配置
され、内設管の上端部を下方から挿通させる挿通孔が貫
通形成され、挿通孔と係止孔との間には、内設管を挿通
孔から係止孔に移動させる連絡孔が形成されていること
を特徴とする。In the first invention of the present invention, a crucible for storing a semiconductor raw material, a heater for heating the crucible to turn the semiconductor raw material into a semiconductor melt, and a semiconductor single crystal from the semiconductor melt. A single-crystal pulling mechanism for pulling up, a container body and a lid, and an airtight container that encloses the crucible, the heater, and the single-crystal pulling mechanism in an airtight state, and a crucible that penetrates the lid of the airtight container and is granular A raw material supply pipe for supplying a semiconductor raw material, the raw material supply pipe having an internal pipe arranged in an airtight container and locked by a locking surface at the lower end of the outer surface of the enlarged diameter. A supply pipe introducing portion for introducing an internal pipe is formed in the lid portion of the container, and the supply pipe introducing portion has a locking hole for inserting and locking the internal pipe, and the upper wall of the hole is provided. A single crystal pulling apparatus provided with a supply pipe stopper having a locking surface facing to the supply pipe. An insertion hole, which is arranged adjacent to the locking hole and through which the upper end portion of the internal pipe is inserted from below, is formed through the female part, and the internal pipe is inserted between the insertion hole and the locking hole. It is characterized in that a communication hole for moving from the hole to the locking hole is formed.
【００１８】即ち、原料供給管の内設管を気密容器内に
配置させて取り付ける際には、まず、蓋部の供給管導入
部に設けられた供給管止め部の挿通孔を通じて、内設管
の上端部を供給管止め部の上方に突出させる。そして、
内設管を連絡孔を通じて供給管止め部の係止孔に移動さ
せ、内設管の上端部外面の係止面を係止孔の係止面に載
置して係止させ、これにより、内設管を供給管止め部の
係止孔に支持させて装着する。そして、蓋部を閉じると
共に内設管を気密容器の容器本体内に配置させる。That is, when the internal pipe of the raw material supply pipe is arranged and attached in the airtight container, first, the internal pipe is inserted through the insertion hole of the supply pipe stopper provided in the supply pipe introduction portion of the lid. The upper end of the is projected above the supply pipe stopper. And
The internal pipe is moved to the locking hole of the supply pipe stopper through the communication hole, and the locking surface of the outer surface of the upper end of the internal pipe is placed and locked on the locking surface of the locking hole. Install the inner pipe by supporting it in the locking hole of the supply pipe stopper. Then, the lid is closed and the internal pipe is arranged in the container body of the airtight container.
【００１９】本発明の第二の発明では、第一の発明にお
いて、供給管止め部は、係止孔、挿通孔及び連絡孔を有
する本体と、本体を嵌合させて支持する本体支持部とか
らなり、本体と本体支持部とは、本体が本体支持部に対
して係止孔の位置を二通り以上に変更させて装着される
形状を成していることを特徴とする。即ち、ルツボを交
換する際には、そのルツボの大きさに応じて、本体の装
着姿勢を変更することで係止孔の位置が位置調整され
る。According to a second aspect of the present invention, in the first aspect, the supply pipe stopper has a main body having a locking hole, an insertion hole and a communication hole, and a main body supporting portion for fitting and supporting the main body. The main body and the main body supporting portion are characterized in that the main body is mounted by changing the positions of the locking holes in the main body supporting portion in two or more ways. That is, when the crucible is replaced, the position of the locking hole is adjusted by changing the mounting posture of the main body according to the size of the crucible.
【００２０】本発明の第三の発明では、第一又は第二の
発明において、供給管止め部には、冷却液を流通させる
冷却液流通路が形成されていることを特徴とする。即
ち、原料供給管の内設管の過熱は防止される。A third invention of the present invention is characterized in that, in the first or second invention, a cooling liquid flow passage is formed in the supply pipe stopper to allow the cooling liquid to flow therethrough. That is, overheating of the internal pipe of the raw material supply pipe is prevented.
【００２１】[0021]
【発明の実施の形態】以下、本発明の一実施形態を図面
に基づき説明する。尚、本実施形態の単結晶引上装置
は、図７の従来の単結晶引上装置１において、供給管止
め具２５を、これを改良した図１に示す供給管止め具５
０に代え、図７の気密容器６の蓋部２２及びその供給管
導入部２３を、これを改良した図１の気密容器１０６の
蓋部１２２及びその供給管導入部１２３に代え、単結晶
引上装置１００としたものである。従って、同一部材に
ついては同一符号を付し、その説明を省略する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. The single crystal pulling apparatus according to the present embodiment is the same as the conventional single crystal pulling apparatus 1 shown in FIG. 7, except that the supply pipe stopper 25 is an improved supply pipe stopper 5 shown in FIG.
0 instead of the lid portion 22 of the airtight container 6 and its supply pipe introducing portion 23 in FIG. 1 replaced with the lid portion 122 of the airtight container 106 and its supply pipe introducing portion 123 of FIG. This is the upper device 100. Therefore, the same members are designated by the same reference numerals and the description thereof is omitted.
【００２２】供給管止め具５０は、図３に示すように平
面視外形が楕円形状の図１の本体６０と、本体６０が嵌
合する嵌合孔７１を有する本体支持部７０と、本体６０
に設けられるキャップ８０とから構成されている。As shown in FIG. 3, the supply pipe stopper 50 has a main body 60 of FIG. 1 having an elliptical outer shape in plan view, a main body supporting portion 70 having a fitting hole 71 into which the main body 60 is fitted, and a main body 60.
And the cap 80 provided on the.
【００２３】本体支持部７０は、嵌合孔７１を形成する
図５に示す平面視楕円形状の内筒７２と、この内筒７２
の周囲に同芯状に配置され、内筒７２の周囲に冷却液流
通路Ｒ１を形成する外筒７３と、内筒７２と外筒７３の
間の冷却液流通路Ｒ１の上端を閉塞する環状上板７５
と、図１に示すように内筒７２と外筒７３の間の冷却液
流通路Ｒ１の下端を閉塞すると共に供給管導入部２３に
ボルト止めされる環状下板７６と、内筒７２と外筒７３
の間に設けられ、冷却液流通路Ｒ１を仕切る仕切り板７
７と、図５に示すように、外筒７３の仕切り板７７を境
にして一方と他方にそれぞれ形成され、冷却液として例
えば冷却水を冷却液流通路Ｒ１に導入する冷却液入口７
８及びその冷却水を冷却液流通路Ｒ１から排出する冷却
液出口７９とからなっている。The main body supporting portion 70 has an inner cylinder 72 having an elliptical shape in plan view, which is shown in FIG.
An outer cylinder 73 that is arranged concentrically around the inner cylinder 72 and forms a cooling liquid flow passage R1 around the inner cylinder 72, and an annular shape that closes the upper end of the cooling liquid flow passage R1 between the inner cylinder 72 and the outer cylinder 73. Upper plate 75
As shown in FIG. 1, an annular lower plate 76 that closes the lower end of the cooling liquid flow passage R1 between the inner cylinder 72 and the outer cylinder 73 and is bolted to the supply pipe introducing portion 23, the inner cylinder 72 and the outer cylinder Tube 73
Partition plate 7 that is provided between the two and partitions the coolant flow passage R1
7, and a partition plate 77 of the outer cylinder 73, as shown in FIG. 5, is formed on one side and the other side of the partition plate 77 respectively, and a cooling liquid inlet 7 for introducing cooling water as cooling liquid into the cooling liquid flow passage R1
8 and a cooling liquid outlet 79 for discharging the cooling water from the cooling liquid flow passage R1.
【００２４】また、本実施形態では、図４に示すよう
に、蓋部１２２が内部に冷却液流通孔Ｒ２を形成した二
重板構造になっており、その冷却液流通孔Ｒ２は、供給
管導入部１２３の供給管導入孔１２３ａの周囲を循環し
て形成されている。供給管導入部１２３の上端面１２３
ｂは、嵌合孔７１より内方に突き出ており、嵌合孔７１
に嵌合された本体６０は、上端面１２３ｂに支持されて
いる。Further, in the present embodiment, as shown in FIG. 4, the lid 122 has a double plate structure in which a cooling liquid flow hole R2 is formed, and the cooling liquid flow hole R2 is a supply pipe. It is formed by circulating around the supply pipe introducing hole 123a of the introducing portion 123. Upper end surface 123 of supply pipe introducing portion 123
b is projected inward from the fitting hole 71, and the fitting hole 71
The main body 60 fitted to is supported by the upper end surface 123b.
【００２５】本体６０は、図２に示すように、一端寄り
（即ち図２左寄り）の位置に、上下に貫通した係止孔６
１を有しており、係止孔６１は、図３に示すように平面
視円形を成している。図２に示すように、係止孔６１の
孔壁の下部６１ａは口径が縮径されており、そのテーパ
ー状の段部には、上方に向いた係止面６１ｂが形成され
ている。係止孔６１には、図１に示すように内設管８の
上端部８ｂが挿通され嵌合されており、その上端部８ｂ
の係止面８ｃは、係止孔６１の孔壁の係止面６１ａに載
置されて係止されている。As shown in FIG. 2, the main body 60 has a locking hole 6 penetrating vertically at a position near one end (that is, to the left in FIG. 2).
1 and the locking hole 61 has a circular shape in plan view as shown in FIG. As shown in FIG. 2, the diameter of a lower portion 61a of the hole wall of the locking hole 61 is reduced, and a tapered step portion is formed with a locking surface 61b facing upward. As shown in FIG. 1, the upper end portion 8b of the internal pipe 8 is inserted and fitted into the locking hole 61, and the upper end portion 8b thereof is inserted.
The locking surface 8c is placed on the locking surface 61a of the hole wall of the locking hole 61 and locked.
【００２６】また、本体６０は、図２に示すように、他
端寄り（即ち図２右寄り）の位置に、挿通孔６２が上下
に貫通形成されており、挿通孔６２は、図３に示すよう
に、平面視円形形状を成し、図１の内設管８の上端部８
ｂを下方から挿通させて上方に突出させるように上端部
８ｂの外周面の口径より大なる口径を有している。ま
た、挿通孔６２の孔壁の上端周縁には、環状凹部６２ａ
が形成されている。As shown in FIG. 2, the main body 60 has an insertion hole 62 vertically formed at a position closer to the other end (that is, closer to the right in FIG. 2). The insertion hole 62 is shown in FIG. Thus, the upper end portion 8 of the internal pipe 8 of FIG.
It has a diameter larger than the diameter of the outer peripheral surface of the upper end portion 8b so that b can be inserted from below and projected upward. In addition, an annular recess 62a is formed at the upper edge of the hole wall of the insertion hole 62.
Are formed.
【００２７】更に、図３に示すように本体６０は、挿通
孔６２と係止孔６１との間を連通させ、上下（即ち図３
紙面に直交する方向）に貫通された連絡孔６３が形成さ
れており、この連絡孔６３の幅Ｄは、図１の内設管８の
上端部８ｂの外周面の口径より狭く、内設管８の上端部
８ｂの直下の中間部８ｄの外周面の口径より広く形成さ
れている。Further, as shown in FIG. 3, the main body 60 allows the insertion hole 62 and the locking hole 61 to communicate with each other, and the upper and lower portions (that is, FIG. 3).
A communication hole 63 is formed so as to penetrate therethrough in a direction orthogonal to the paper surface. The width D of the communication hole 63 is narrower than the diameter of the outer peripheral surface of the upper end portion 8b of the inner pipe 8 in FIG. 8 is formed wider than the diameter of the outer peripheral surface of the intermediate portion 8d immediately below the upper end portion 8b.
【００２８】キャップ８０は、挿通孔６２に嵌合される
円筒部８１と、円筒部８１の上端に固設され、その周縁
を嵌合凹部６２ａに嵌合させる円板部８２とからなって
いる。The cap 80 is composed of a cylindrical portion 81 fitted in the insertion hole 62, and a disc portion 82 fixed to the upper end of the cylindrical portion 81 and having its peripheral edge fitted in the fitting recess 62a. .
【００２９】単結晶引上装置１００は以上のような構成
を有するので、図６の原料供給管７の内設管８を気密容
器６内に配置させて取り付ける際には、図１に示す蓋部
１２２の供給管導入部１２３に設けられた供給管止め具
５０の本体６０の挿通孔６２を通じて、内設管８の上端
部８ｂを本体６０の上方に突出させる。すると、挿通孔
６２には、内設管８の上端部８ｂの直下の縮径された中
間部８ｄが配置される。この中間部８ｄは、上端部８ｂ
に比して縮径されているので連絡孔６３を往来すること
ができる。そこで、内設管８を連絡孔６３を通じて係止
孔６１に水平移動させた後、内設管８を降ろして、内設
管８の上端部８ｂを係止孔６１に嵌合させると共に、上
端部８ｂの外面の係止面８ｃを係止孔６１の係止面６１
ｂに載置して係止させる。そして、空になった挿通孔６
２にキャップ８０を填めて、挿通孔６２への内設管８の
移動を防止する。これにより、内設管８を取り付けるこ
とができる。蓋部１２２を閉じると共に、内設管８をガ
イド３１に挿通させて気密容器６の容器本体２１内に配
置させる。よって、図７、図８に示す従来のように一対
の割型２６、２７を係止孔２８を形成するように互いに
合わせると共に割型支持部２９の嵌合孔２９ａに嵌合さ
せるという煩雑な作業を省くことができるので、内設管
８の取り付けを容易且つ迅速に行なうことができる。Since the single crystal pulling apparatus 100 has the above-mentioned structure, when the internal pipe 8 of the raw material supply pipe 7 of FIG. 6 is arranged and attached in the airtight container 6, the lid shown in FIG. The upper end 8b of the internal pipe 8 is projected above the main body 60 through the insertion hole 62 of the main body 60 of the supply pipe stopper 50 provided in the supply pipe introducing portion 123 of the portion 122. Then, in the insertion hole 62, the reduced diameter intermediate portion 8d immediately below the upper end portion 8b of the internal pipe 8 is arranged. The middle portion 8d has an upper end 8b.
Since the diameter is smaller than that of, the communication hole 63 can come and go. Therefore, after the internal pipe 8 is horizontally moved to the locking hole 61 through the communication hole 63, the internal pipe 8 is lowered to fit the upper end portion 8b of the internal pipe 8 into the locking hole 61, and The locking surface 8c on the outer surface of the portion 8b is connected to the locking surface 61 of the locking hole 61.
Place on b and lock. And the empty insertion hole 6
2 is fitted with a cap 80 to prevent the internal pipe 8 from moving into the insertion hole 62. Thereby, the internal pipe 8 can be attached. The lid 122 is closed, and the internal pipe 8 is inserted through the guide 31 and placed in the container body 21 of the airtight container 6. Therefore, as in the conventional case shown in FIGS. 7 and 8, a pair of split molds 26 and 27 are aligned with each other so as to form a locking hole 28, and are fitted into the fitting hole 29a of the split mold support 29, which is complicated. Since the work can be omitted, the internal pipe 8 can be easily and quickly attached.
【００３０】尚、図１に示すように、本体６０は、本体
支持部７０の嵌合孔７１に対して上方に離脱自在なの
で、本体６０を離脱させておき、内設管８の上端部８ｂ
を嵌合孔７１を通じて本体支持部７０の上方に突出させ
た状態で、本体６０の挿通孔６２を内設管８の上端部８
ｂに通じさせて連絡孔６３を通じて係止孔６１に移動さ
せた後、その内設管８の上端部８ｂと共に本体６０を本
体支持部７０の嵌合孔６２に嵌合させるようにしてもよ
い。As shown in FIG. 1, the main body 60 can be detached upward from the fitting hole 71 of the main body supporting portion 70. Therefore, the main body 60 is detached and the upper end portion 8b of the internal pipe 8 is detached.
The upper end 8 of the internal pipe 8 with the insertion hole 62 of the main body 60 in a state of protruding above the main body supporting portion 70 through the fitting hole 71.
It may be configured such that the body 60 is fitted into the fitting hole 62 of the body supporting portion 70 together with the upper end portion 8b of the internal pipe 8 after being moved to the locking hole 61 through the communication hole 63. .
【００３１】次に、ルツボ３を例えば図６の直径のもの
から更に大直径のものに交換する際には、ガイド３１の
位置を軸線ＣＴから離れた位置に変更すれば、以下のよ
うに簡便に内設管８の下端の位置を、交換されたルツボ
３に対応させて軸線ＣＴから離すことができる。即ち、
まず、図１の本体６０を本体支持部７０の嵌合孔７１か
ら上方に離脱させ、本体６０を水平に１８０度回転させ
る。この際、本体６０は楕円形であるので、本体６０を
水平に１８０度回転させても、外形は変化しない。よっ
て、その状態で、再び、嵌合孔７１に嵌合させることが
できる。すると、本体６０の係止孔６１は、前記軸線Ｃ
Ｔから遠ざかる位置に移動するので、係止孔６１に内設
管８の上端部８ｂを嵌合させ係止させれば、内設管８を
軸線ＣＴから離して設置することが容易にできる。ま
た、この逆の操作で、内設管８を軸線ＣＴに近づけて設
置することが容易にできる。よって、従来より更に簡便
に内設管８を適当な位置に配置させ取り付けることがで
きるので、ルツボ３の交換を容易にすることができる。Next, when exchanging the crucible 3 having a larger diameter, for example, from the diameter shown in FIG. 6, if the position of the guide 31 is changed to a position distant from the axis CT, the following will be simplified. Moreover, the position of the lower end of the internal pipe 8 can be separated from the axis CT in correspondence with the replaced crucible 3. That is,
First, the main body 60 of FIG. 1 is separated upward from the fitting hole 71 of the main body supporting portion 70, and the main body 60 is horizontally rotated 180 degrees. At this time, since the main body 60 has an elliptical shape, the outer shape does not change even when the main body 60 is horizontally rotated 180 degrees. Therefore, in this state, the fitting hole 71 can be fitted again. Then, the locking hole 61 of the main body 60 is
Since it moves to a position away from T, if the upper end 8b of the internal pipe 8 is fitted and locked in the locking hole 61, the internal pipe 8 can be easily installed away from the axis CT. Further, by performing the reverse operation, it is possible to easily install the internal pipe 8 close to the axis CT. Therefore, since the internal pipe 8 can be arranged and attached at an appropriate position more easily than in the conventional case, the replacement of the crucible 3 can be facilitated.
【００３２】また、半導体単結晶Ｓｃ３の成長時には、
図５に示す本体支持部７０の冷却液入口７８から冷却水
を導入させ、嵌合孔７１の周囲の冷却液流通路Ｒ１を循
環させて冷却液出口７９から排出させることで、図１に
示すように嵌合孔７１に嵌合された本体６０を介して、
その本体６０の係止孔６１に嵌合され係止された内設管
８の上端部８ｂの過熱を防止することができる。よっ
て、内設管８の劣化防止、引いては長寿命化を図ること
ができる。また、蓋部１２２及びその供給管導入部１２
３の冷却液流通孔Ｒ２に冷却水を流通させることで、そ
の蓋部１２２及びその供給管導入部１２３の過熱を防止
することができるので、蓋部１２２及び供給管導入部１
２３の劣化防止、引いては長寿命化を図ることができ
る。When the semiconductor single crystal Sc3 is grown,
By introducing cooling water from the cooling liquid inlet 78 of the main body supporting portion 70 shown in FIG. 5, circulating the cooling water flow passage R1 around the fitting hole 71, and discharging it from the cooling liquid outlet 79, the cooling water is shown in FIG. Through the main body 60 fitted in the fitting hole 71,
It is possible to prevent overheating of the upper end portion 8b of the internal pipe 8 fitted and locked in the locking hole 61 of the main body 60. Therefore, the deterioration of the internal pipe 8 can be prevented, and the life of the internal pipe 8 can be extended. Further, the lid 122 and the supply pipe introducing portion 12 thereof
By circulating the cooling water through the cooling liquid flow hole R2 of No. 3, it is possible to prevent overheating of the lid portion 122 and the supply pipe introducing portion 123 thereof, and therefore the lid portion 122 and the supply pipe introducing portion 1
It is possible to prevent the deterioration of 23 and to extend the life thereof.
【００３３】尚、上記実施形態では、供給管止め部とし
て、本体６０と本体支持部７０とが着脱自在な供給管止
め具５０を設けたが、この供給管止め具５０は、その本
体６０と本体支持部７０を一体に固設すると共に蓋部１
２２の供給管導入部１２３に一体に固設する構成とした
実施形態も本発明に含まれる。In the above-described embodiment, the supply pipe stopper 50 is provided as the supply pipe stopper so that the main body 60 and the main body support portion 70 can be attached and detached. The body supporting portion 70 is integrally fixed, and the lid portion 1
The present invention also includes an embodiment in which the supply pipe introduction portion 123 of 22 is integrally fixed.
【００３４】また、本体６０の外形の平面形状及び嵌合
孔７１の平面形状を円形とする構成とすると、本体６０
は、嵌合孔７１に対して回転自在となるので、本体６０
の係止孔６１の位置を、ルツボ３の中心側から周縁側に
連続的に移動調整することができる。調整距離から外れ
た場合は、図１０の内設管１８のように係止部１８ａと
供給部１８ｂの軸線がずれた内設管を使用してもよい。If the outer shape of the main body 60 and the shape of the fitting hole 71 are circular, the main body 60 will have a circular shape.
Is rotatable with respect to the fitting hole 71, the main body 60
The position of the engaging hole 61 can be continuously moved and adjusted from the center side of the crucible 3 to the peripheral side. When it is out of the adjustment distance, it is possible to use an internal pipe in which the axes of the engaging portion 18a and the supply portion 18b are deviated, like the internal pipe 18 of FIG.
【００３５】また、粒状半導体原料Ｓｃ１としては、ガ
リウムヒ素（ＧaＡs）としてもよく、この場合、ドーパ
ントは亜鉛（Ｚn）もしくはシリコン（Ｓｉ）等とな
る。また、上記実施形態では、粒状半導体原料Ｓｃ１を
連続的に供給する構成としたが、粒状半導体原料Ｓｃ１
を間欠的に供給する構成としてもよい。例えば、ルツボ
３内の半導体融液Ｓｃ２の液位が所定高さ以下になるま
で粒状半導体原料Ｓｃ１の充填は行なわず、半導体融液
Ｓｃ２の液位が所定の下限液位以下となったところで、
半導体融液Ｓｃ２の液位が所定の基準液位となるように
粒状半導体原料Ｓｃ１を充填する。The granular semiconductor material Sc1 may be gallium arsenide (GaAs), in which case the dopant is zinc (Zn), silicon (Si), or the like. Further, in the above embodiment, the granular semiconductor raw material Sc1 is continuously supplied, but the granular semiconductor raw material Sc1 is used.
May be intermittently supplied. For example, the granular semiconductor raw material Sc1 is not filled until the liquid level of the semiconductor melt Sc2 in the crucible 3 becomes equal to or lower than a predetermined height, and when the liquid level of the semiconductor melt Sc2 becomes equal to or lower than a predetermined lower limit liquid level,
The granular semiconductor raw material Sc1 is filled so that the liquid level of the semiconductor melt Sc2 becomes a predetermined reference liquid level.
【００３６】[0036]
【発明の効果】即ち、本発明の第一の発明では、原料供
給管の内設管を気密容器内に配置させて取り付ける際に
は、内設管の上端部を供給管止め部の挿通孔を通じて上
方に突出させることができ、その内設管を連絡孔を通じ
て供給管止め部の係止孔に移動させ、内設管の上端部外
面の係止面を係止孔の係止面に載置して係止させること
で、内設管の取り付けを行なうことができるので、従来
のように、一対の割型を係止孔を形成するように互いに
合わせると共に割型支持部の嵌合孔に嵌合させる場合に
比して、内設管の取り付けを容易且つ迅速に行なうこと
ができる。According to the first aspect of the present invention, when the inner pipe of the raw material supply pipe is arranged and mounted in the airtight container, the upper end of the inner pipe is inserted into the insertion hole of the supply pipe stopper. The inner pipe can be moved to the locking hole of the supply pipe stopper through the communication hole, and the locking surface on the outer surface of the upper end of the internal pipe can be placed on the locking surface of the locking hole. Since the internal pipe can be attached by placing and locking it, a pair of split molds are aligned with each other to form a locking hole and a fitting hole of the split mold support portion is formed as in the conventional case. It is possible to easily and quickly attach the internal pipe, as compared with the case of fitting the internal pipe.
【００３７】本発明の第二の発明では、上記効果に加え
て、ルツボを交換する場合に、そのルツボの大きさに応
じて、係止孔の位置を調整することができるので、従来
より更に簡便に内設管をルツボ内の周縁近傍に配置させ
取り付けることができる。従って、ルツボの交換が容易
である。In the second aspect of the present invention, in addition to the above effects, when the crucible is replaced, the position of the locking hole can be adjusted according to the size of the crucible. The internal pipe can be easily arranged and attached near the peripheral edge in the crucible. Therefore, it is easy to replace the crucible.
【００３８】本発明の第三の発明では、上記効果に加え
て、原料供給管の内設管の過熱は防止されるので、内設
管の長寿命化を図ることができる。In the third aspect of the present invention, in addition to the above effects, overheating of the inner pipe of the raw material supply pipe is prevented, so that the life of the inner pipe can be extended.
【図１】 本発明の単結晶引上装置の供給管止め部（供
給管止め具）の一実施形態を示す正面断面図である。FIG. 1 is a front sectional view showing an embodiment of a supply pipe stopper (supply pipe stopper) of a single crystal pulling apparatus of the present invention.
【図２】 図１の供給管止め部の本体の正面断面図であ
る。FIG. 2 is a front cross-sectional view of the main body of the supply pipe stopper of FIG.
【図３】 図２の本体の平面図である。FIG. 3 is a plan view of the main body of FIG.
【図４】 図１の供給管止め部の本体支持部の側面断面
図である。FIG. 4 is a side sectional view of a main body supporting portion of the supply pipe stopper of FIG.
【図５】 図４の本体支持部の平面図である。5 is a plan view of the main body support portion of FIG. 4. FIG.
【図６】 単結晶引上装置を示す概略図である。FIG. 6 is a schematic view showing a single crystal pulling apparatus.
【図７】 従来の単結晶引上装置の供給管止め部の一例
を示す図である。FIG. 7 is a view showing an example of a supply pipe stopper of a conventional single crystal pulling apparatus.
【図８】 図７の供給管止め部の割型の平面図である。8 is a plan view of the split mold of the supply pipe stopper of FIG. 7. FIG.
【図９】 原料供給管の内設管の一例を示す側面図であ
る。FIG. 9 is a side view showing an example of an internal pipe of a raw material supply pipe.
【図１０】 原料供給管の内設管の一例を示す正面図で
ある。FIG. 10 is a front view showing an example of an internal pipe of a raw material supply pipe.
３ ルツボ ４ 加熱器 ５ 単結晶引上機構 ７ 原料供給管 ８ 内設管 ８ｂ 上端部 ８ｃ 係止面 ９ 外設管部 ５０ 供給管止め具（供給管止め部） ６０ 本体 ６１ 係止孔 ６１ｂ 係止面 ６２ 挿通孔 ６３ 連絡孔 ７０ 本体支持部 １００ 単結晶引上装置 １０６ 気密容器 １２２ 蓋部 １２３ 供給管導入部 Ｓｃ１ 粒状半導体原料 Ｓｃ２ 半導体融液 Ｓｃ３ 半導体単結晶 Ｒ１ 冷却液流通路 3 crucible 4 heater 5 single crystal pulling mechanism 7 raw material supply pipe 8 internal pipe 8b upper end portion 8c locking surface 9 external pipe portion 50 supply pipe stopper (supply pipe stopper portion) 60 main body 61 locking hole 61b engagement Stop face 62 Insertion hole 63 Communication hole 70 Main body support 100 Single crystal pulling device 106 Airtight container 122 Lid 123 Supply pipe introduction Sc1 Granular semiconductor raw material Sc2 Semiconductor melt Sc3 Semiconductor single crystal R1 Coolant flow passage
───────────────────────────────────────────────────── フロントページの続き (72)発明者 降屋 久 東京都千代田区大手町一丁目５番１号 三 菱マテリアルシリコン株式会社内 (72)発明者 喜田 道夫 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hisashi Furuya 1-5-1, Otemachi, Chiyoda-ku, Tokyo Sanritsu Material Silicon Co., Ltd. (72) Inventor Michio Kita 1-297 Kitabukuro-cho, Omiya-shi, Saitama Address Mitsubishi Materials Corporation, Research Institute
Claims (3)
ボを加熱して半導体原料を半導体融液とする加熱器と、
該半導体融液から半導体単結晶を引き上げる単結晶引上
機構と、容器本体と蓋部とからなり、前記ルツボ、前記
加熱器、単結晶引上機構を気密状態に包囲する気密容器
と、該気密容器の蓋部を貫通して前記ルツボに粒状半導
体原料を供給する原料供給管とを備え、該原料供給管
は、前記気密容器内に配置され、拡径された上端部外面
の下端の係止面で係止される内設管を有し、前記気密容
器の蓋部には、前記内設管を導入する供給管導入部が形
成され、該供給管導入部には、前記内設管を挿通して係
止する係止孔を有し、その孔壁に上方に向いた係止面が
形成された供給管止め部が設けられている単結晶引上装
置であって、 前記供給管止め部には、前記係止孔に隣接して配置さ
れ、前記内設管の上端部を挿通させる挿通孔が貫通形成
され、該挿通孔と前記係止孔との間には、前記内設管を
前記挿通孔から前記係止孔に移動させる連絡孔が形成さ
れていることを特徴とする単結晶引上装置。1. A crucible for storing a semiconductor raw material, and a heater for heating the crucible to turn the semiconductor raw material into a semiconductor melt.
A single crystal pulling mechanism for pulling a semiconductor single crystal from the semiconductor melt, a container body and a lid part, and an airtight container surrounding the crucible, the heater, and the single crystal pulling mechanism in an airtight state, and the airtight container. A raw material supply pipe that penetrates the lid of the container to supply the granular semiconductor raw material to the crucible, the raw material supply pipe being disposed in the airtight container, and locking the lower end of the outer surface of the expanded upper end portion. A supply pipe introducing portion for introducing the internal pipe is formed in the lid portion of the airtight container, and the internal pipe is attached to the supply pipe introducing portion. A single crystal pulling apparatus having a locking hole for inserting and locking, and a supply pipe stopper having a locking surface facing upward is formed on a wall of the hole. An insertion hole, which is arranged adjacent to the locking hole and through which the upper end of the internal pipe is inserted, is formed through the portion. A single crystal pulling apparatus, characterized in that a communication hole for moving the internal pipe from the insertion hole to the locking hole is formed between the insertion hole and the locking hole.
挿通孔及び前記連絡孔を有する本体と、該本体を嵌合さ
せて支持する本体支持部とからなり、前記本体と前記本
体支持部とは、前記本体が前記本体支持部に対して前記
係止孔の位置を二通り以上に変更させて装着される形状
を成していることを特徴とする請求項１記載の単結晶引
上装置。2. The supply pipe stopper comprises a main body having the locking hole, the insertion hole, and the communication hole, and a main body supporting portion that fits and supports the main body, the main body and the main body. The single crystal according to claim 1, wherein the supporting portion has a shape in which the main body is mounted by changing the positions of the locking holes with respect to the main body supporting portion in two or more ways. Lifting device.
せる冷却液流通路が形成されていることを特徴とする請
求項１又は２記載の単結晶引上装置。3. The single crystal pulling apparatus according to claim 1, wherein the supply pipe stop portion is formed with a cooling liquid flow passage through which a cooling liquid flows.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00440596A JP3412376B2 (en) | 1996-01-12 | 1996-01-12 | Single crystal pulling device |
| TW085113050A TW503265B (en) | 1995-12-28 | 1996-10-24 | Single crystal pulling apparatus |
| DE19654220A DE19654220B4 (en) | 1995-12-28 | 1996-12-23 | Single crystal pulling apparatus |
| US08/774,184 US5858087A (en) | 1995-12-28 | 1996-12-26 | Single crystal pulling apparatus |
| KR1019960072768A KR100490569B1 (en) | 1995-12-28 | 1996-12-27 | Single crystal pulling appratus |
| CNB961239662A CN1150354C (en) | 1995-12-28 | 1996-12-28 | Single crystal pulling apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00440596A JP3412376B2 (en) | 1996-01-12 | 1996-01-12 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09194283A true JPH09194283A (en) | 1997-07-29 |
| JP3412376B2 JP3412376B2 (en) | 2003-06-03 |
Family
ID=11583421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00440596A Expired - Fee Related JP3412376B2 (en) | 1995-12-28 | 1996-01-12 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3412376B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH054888A (en) * | 1991-06-26 | 1993-01-14 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH061688A (en) * | 1992-06-22 | 1994-01-11 | Nkk Corp | Method and device for feeding granular dopant |
| US5580171A (en) * | 1995-07-24 | 1996-12-03 | Lim; John C. | Solids mixing, storing and conveying system for use with a furnace for single crystal silicon production |
| JPH09194295A (en) * | 1995-10-31 | 1997-07-29 | Memc Electron Materials Inc | System for supplying solid material into furnace |
-
1996
- 1996-01-12 JP JP00440596A patent/JP3412376B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH054888A (en) * | 1991-06-26 | 1993-01-14 | Nkk Corp | Apparatus for producing silicon single crystal |
| JPH061688A (en) * | 1992-06-22 | 1994-01-11 | Nkk Corp | Method and device for feeding granular dopant |
| US5580171A (en) * | 1995-07-24 | 1996-12-03 | Lim; John C. | Solids mixing, storing and conveying system for use with a furnace for single crystal silicon production |
| JPH09194295A (en) * | 1995-10-31 | 1997-07-29 | Memc Electron Materials Inc | System for supplying solid material into furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3412376B2 (en) | 2003-06-03 |
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