JPH03199192A - Crucible for pulling up silicon single crystal - Google Patents
Crucible for pulling up silicon single crystalInfo
- Publication number
- JPH03199192A JPH03199192A JP33934989A JP33934989A JPH03199192A JP H03199192 A JPH03199192 A JP H03199192A JP 33934989 A JP33934989 A JP 33934989A JP 33934989 A JP33934989 A JP 33934989A JP H03199192 A JPH03199192 A JP H03199192A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- chamber
- single crystal
- crucible
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 239000002994 raw material Substances 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005192 partition Methods 0.000 claims abstract description 5
- 239000008710 crystal-8 Substances 0.000 abstract description 8
- 239000000155 melt Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、シリコン単結晶引上げ用ルツボ、特にシリコ
ン原料を供給しながらシリコン単結晶の引上げを行うよ
うにしたシリコン単結晶引上げ用ルツボに関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a crucible for pulling a silicon single crystal, particularly a silicon single crystal that pulls a silicon single crystal while supplying a silicon raw material. Regarding a pulling crucible.
（従来の技術）
シリコン単結晶の製造方法の一つとして、ルツボ内のシ
リコン原料を加熱することによって溶がし、上方より単
結晶シード（種）をこの原料融液につけ、十分馴染ませ
た後、回転させながらゆっくり引上げることにより、原
料融液を固体化させながらシリコン単結晶をゆっくり成
長させる、チョクラルスキー法が一般に知られている。(Prior art) One of the methods for producing silicon single crystals is to melt the silicon raw material in a crucible by heating it, and then add a single crystal seed (seed) from above to the melt of the raw material, and after it is sufficiently absorbed. The Czochralski method is generally known, in which a silicon single crystal is slowly grown while solidifying a raw material melt by slowly pulling it up while rotating it.
この方法において、ルツボ内の原料融液にシリコン原料
を連続的に補給することにより、原料融液量を常に一定
に保った状態でシリコン単結晶の製造を行うようにする
ことが提案されている。In this method, it has been proposed to manufacture silicon single crystals while keeping the amount of raw material melt constant at all times by continuously replenishing silicon raw material to the raw material melt in the crucible. .
第４図はこの方法に用いられる従来の一般的なルツボの
一例を示すもので、このルツボ１０は、有底円筒状の石
英製ルツボ本体１１の内部に、円筒状の石英製隔離壁１
２を該ルツボ本体１１に対して同心状に配置して、ルツ
ボ本体１１の内部を中央の円筒状結晶育成室１１ａとこ
の周囲のリング状材料供給室１１ｂに区画するとともに
、隔離壁１２の下部に開孔１２ａを設けて結晶育成室１
１ａと材料供給室１１ｂとを連通させることによって構
成されている。Fig. 4 shows an example of a conventional general crucible used in this method.
2 are arranged concentrically with respect to the crucible body 11, and the inside of the crucible body 11 is divided into a central cylindrical crystal growth chamber 11a and a ring-shaped material supply chamber 11b surrounding this, and the lower part of the separating wall 12 An opening 12a is provided in the crystal growth chamber 1.
It is configured by communicating the material supply chamber 1a and the material supply chamber 11b.
そして、このルツボ本体１１と隔離壁１２との間の材料
供給室１１ｂの上方には、シリコン原料供給用の原料供
給管１３が設置され、この材料供給室１１ｂ内に位置す
る原料融液１４内にシリコン原料１５を連続的に落とし
込むとともに、結晶育成室１１ａのほぼ中央からシリコ
ン単結晶１６を回転させながらゆっくり引き上げるよう
ようになされていた。A raw material supply pipe 13 for supplying silicon raw materials is installed above the material supply chamber 11b between the crucible body 11 and the separation wall 12, and a raw material melt 14 located in the material supply chamber 11b is installed. The silicon raw material 15 was continuously dropped into the crystal growth chamber 11a, and the silicon single crystal 16 was slowly pulled up while rotating from approximately the center of the crystal growth chamber 11a.
このように隔離壁１２でルツボ本体１１の内部を結晶育
成室１１ａと材料供給室１１ｂに区画するとともに両室
１１ａ、ｌｌｂを互いに連通させることにより、シリコ
ン原料１５が原料融液１４内に落ち込んだ際に生じる融
液表面の振動や浮遊する未溶解原料が単結晶の成長界面
に届くことを防止して、シリコン結晶構造に乱れが生じ
ないようになされていた。In this way, by dividing the inside of the crucible body 11 into the crystal growth chamber 11a and the material supply chamber 11b with the separating wall 12, and by making both chambers 11a and llb communicate with each other, the silicon raw material 15 falls into the raw material melt 14. This prevents the resulting vibrations on the melt surface and floating undissolved raw materials from reaching the growth interface of the single crystal, thereby preventing disturbances in the silicon crystal structure.
（発明が解決しようとする課題）
しかしながら、上記従来例においては、ルツボ本体１１
と隔離壁１２との間の材料供給室１１ｂに落とし込むシ
リコン原料１５は固体であるため、原料融液１４内にお
いて溶解する際に、回りから熱を吸収して原料融液１４
全体の温度を下げてしまう。そして、このように温度が
低くなった原料融液１４がシリコン単結晶の成育により
、隔離壁１２の下部にある開孔１２ａを通じて結晶育成
室１１ａの内部に導入され、結晶育成室１１ａ内部の原
料融液１４の温度分布にむらが生じてしまうといった問
題点があった。(Problem to be Solved by the Invention) However, in the above conventional example, the crucible body 11
Since the silicon raw material 15 dropped into the material supply chamber 11b between the and the isolation wall 12 is solid, when it is melted in the raw material melt 14, it absorbs heat from the surroundings and melts into the raw material melt 14.
It lowers the overall temperature. The raw material melt 14 whose temperature has been lowered in this way is introduced into the crystal growth chamber 11a through the opening 12a in the lower part of the partition wall 12 due to the growth of the silicon single crystal, and the raw material inside the crystal growth chamber 11a is There was a problem in that the temperature distribution of the melt 14 was uneven.
即ち、第５図に示すように、結晶育成室１１ａ内に位置
する原料溶液１４の温度Ｔ２が、シリコン原料１５の供
給によって、温度Ｔ ２ （Ｔ ２くＴ２）に低下
してしまうのである。That is, as shown in FIG. 5, the temperature T2 of the raw material solution 14 located in the crystal growth chamber 11a is lowered to temperature T2 (T2 x T2) due to the supply of the silicon raw material 15.
本発明は上記に鑑み、シリコン原料の供給によって温度
の低下した原料融液が直接ルツボ内部の結晶育成室へ導
入されることを防止して、より安定にシリコン単結晶を
得るようにしたものを提供することを目的とする。In view of the above, the present invention prevents the raw material melt whose temperature has been lowered by supplying the silicon raw material from being directly introduced into the crystal growth chamber inside the crucible, thereby obtaining silicon single crystals more stably. The purpose is to provide.
（課題を解決するための手段）
上記目的を達成するため、本発明に係るシリコン単結晶
引上げ用ルツボは、内部に収納されたシリコン原料融液
からシリコン単結晶を成長させて引き上げるシリコン単
結晶引上げ用ルツボにおいて、ルツボ本体の内部に直径
の異なる２つの円筒状隔離壁を同心状に配置して該ルツ
ボ本体の内部を結晶育成室、中間室及び材料供給室の３
つの部屋に仕切るとともに、結晶育成室と中間室、及び
中間室と材料供給室とを夫々互いに連通させたものであ
る。(Means for Solving the Problems) In order to achieve the above object, the silicon single crystal pulling crucible according to the present invention grows and pulls a silicon single crystal from a silicon raw material melt stored therein. In a commercial crucible, two cylindrical partition walls with different diameters are arranged concentrically inside the crucible body, and the interior of the crucible body is divided into three areas: a crystal growth chamber, an intermediate chamber, and a material supply chamber.
The crystal growth chamber and the intermediate chamber, and the intermediate chamber and the material supply chamber are connected to each other.
（作 用）
上記のように構成した本発明によれば、シリコン材料の
供給によって温度の低下した原料溶液は、原料供給室か
ら一旦中間室と通って結晶育成室に導かれるため、ここ
で温度が上昇して結晶育成室の内部に位置する原料溶液
の温度を低下させてしまうことを防止することができる
。(Function) According to the present invention configured as described above, the raw material solution whose temperature has been lowered by supplying the silicon material is guided from the raw material supply chamber through the intermediate chamber and into the crystal growth chamber, where the temperature is lowered. It is possible to prevent the temperature from rising and lowering the temperature of the raw material solution located inside the crystal growth chamber.
（実施例）
以下、本発明の一実施例を第１図及び第２図に基づいて
説明する。(Example) Hereinafter, an example of the present invention will be described based on FIGS. 1 and 2.
同図において、ルツボ１には有底円筒状の石英製ルツボ
本体２が備えられ、このルツボ本体２の内部には、円筒
状で直径の異なる石英製の第１の隔離壁３と第２の隔離
壁４が同心状に配置され、これによってルツボ本体２の
内部は、中央の円筒状結晶育成室２ａと、この結晶育成
室２ａの周囲を囲撓するリング状中間室２ｂと、この中
間室２ｂの周囲を囲撓するリング状原料供給室２Ｃに区
画されている。In the figure, a crucible 1 is equipped with a bottomed cylindrical quartz crucible body 2, and inside this crucible body 2 there are a first isolation wall 3 and a second cylindrical quartz isolation wall 3 having different diameters. Separation walls 4 are arranged concentrically, so that the inside of the crucible body 2 includes a central cylindrical crystal growth chamber 2a, a ring-shaped intermediate chamber 2b surrounding the crystal growth chamber 2a, and this intermediate chamber. It is divided into a ring-shaped raw material supply chamber 2C surrounding the periphery of the chamber 2b.
そして、上記第１の隔離壁３の下端部には、前後に連通
する開孔３ａが、第２の隔離壁４のこの開孔３ａとルツ
ボ本体１の中心に対して対称位置には前後に連通ずる開
孔４ａが夫々設けられ、これにより、結晶育成室２ａと
中間室２ｂ、及び中間室２ｂと原料供給室２Ｃとがこの
開孔３ａ及び４ａを介して夫々連通するようなされてい
る。At the lower end of the first separating wall 3, an opening 3a that communicates back and forth is located at a symmetrical position with respect to the opening 3a of the second separating wall 4 and the center of the crucible body 1. A communicating opening 4a is provided, so that the crystal growth chamber 2a and the intermediate chamber 2b and the intermediate chamber 2b and the raw material supply chamber 2C communicate with each other through the openings 3a and 4a, respectively.
更に原料供給室２ｃの上方には、シリコン原料６を供給
する原料供給管５が配置され、この供給管５から固体の
シリコン原料６がルツボ本体２の内部に供給されるよう
なされている。Further, above the raw material supply chamber 2c, a raw material supply pipe 5 for supplying the silicon raw material 6 is arranged, and the solid silicon raw material 6 is supplied from this supply pipe 5 into the inside of the crucible body 2.
なお、図示しないがルツボ本体２は回転及び上下動自在
な駆動軸上に取付けられたカーボンルツボによって保持
され、その外周部側方には、加熱用ヒータが配置されて
いる。更に、このルツボ本体２の上方には、原料融液７
からシリコン１１１結晶８を回転させつつ徐々に引上げ
る引上げ機構が設けられているとともに、上記原料供給
管５は、外部にある原料供給機構により導入されたシリ
コン原料６をルツボ本体２の周壁と第２の隔離壁４で仕
切られた原料供給室２Ｃ内に位置決めして供給するよう
なされている。Although not shown, the crucible body 2 is held by a carbon crucible mounted on a rotatable and vertically movable drive shaft, and a heater is arranged on the side of the outer periphery of the crucible. Further, above the crucible body 2, a raw material melt 7 is provided.
A pulling mechanism is provided to gradually pull up the silicon 111 crystal 8 while rotating it, and the raw material supply pipe 5 connects the silicon raw material 6 introduced by the external raw material supply mechanism with the peripheral wall of the crucible body 2. The raw material is positioned and supplied within a raw material supply chamber 2C partitioned by two separating walls 4.
上記ルツボ１を用いてのシリコン単結晶８の引上げでは
、結晶の育成量に応じて原料供給機構から原料供給管５
を介してシリコン原料６をルツボ本体２の原料供給室２
Ｃ内の原料融液７に供給して溶解させる。そして、この
シリコン原料６の供給によって増量した原料融液７は、
シリコン単結晶８の引上げによって第２の隔離壁４の下
部の開孔４ａから中間室２ｂへ、更に中間室２ｂから第
１の隔離壁３の下部の開孔３ａを通過して結晶育成室２
ａへ導入されるのである。In pulling the silicon single crystal 8 using the crucible 1, the raw material supply pipe 5 is connected to the raw material supply mechanism according to the amount of crystal growth.
The silicon raw material 6 is supplied to the raw material supply chamber 2 of the crucible body 2 through
It is supplied to the raw material melt 7 in C and dissolved. The amount of raw material melt 7 increased by supplying this silicon raw material 6 is
By pulling the silicon single crystal 8, it passes through the opening 4a at the lower part of the second separating wall 4 to the intermediate chamber 2b, and then passes from the intermediate chamber 2b through the opening 3a at the lower part of the first separating wall 3 to the crystal growth chamber 2.
It is introduced into a.
この時、シリコン原料６の供給によって温度の低下した
原料融液７が、材料供給室２ｃから中間室２ｂを通過し
て結晶育成室２ａに到達するまでに結晶育成室２ａにあ
る原料融液７の温度と同程度まで回復させることができ
るため、結晶育成室２ａ内にある原料融液７の温度変化
をなくして正常なシリコン単結晶８の引上げを行うこと
ができることになる。At this time, the raw material melt 7 whose temperature has decreased due to the supply of the silicon raw material 6 passes through the intermediate chamber 2b from the material supply chamber 2c and reaches the crystal growth chamber 2a. Since the temperature can be recovered to the same level as that of , normal silicon single crystal 8 can be pulled without any temperature change in raw material melt 7 in crystal growth chamber 2a.
即ち、第３図に示すように、結晶育成室２ａ内に位置す
る原料溶液７の温度Ｔ１が、シリコン原料８の供給によ
って温度Ｔ１′となるが、この両者はほぼ等しく （Ｔ
１′Ｊ−Ｔ２）なるのである。That is, as shown in FIG. 3, the temperature T1 of the raw material solution 7 located in the crystal growth chamber 2a becomes the temperature T1' due to the supply of the silicon raw material 8, but the two are approximately equal (T
1'J-T2).
従って、結晶引上げ量と同量のシリコン原料６を供給す
れば、融液面の高さが一定に保たれるため、結晶長さ方
向の酸素濃度の均一なシリコン単結晶８を得ることがで
きる。また引上げ結晶のドーパント濃度に同等なドーパ
ント濃度になるようにシリコン原料６と共にドーパント
を添付すれば、結晶長さ方向にドーパント濃度の均一な
シリコン単結晶８を得ることでき、これによってシリコ
ン原料６に対する結晶歩留まりの向上を図ることができ
る。Therefore, if the same amount of silicon raw material 6 as the amount of crystal pulling is supplied, the height of the melt surface is kept constant, and a silicon single crystal 8 with a uniform oxygen concentration in the crystal length direction can be obtained. . Furthermore, if a dopant is added together with the silicon raw material 6 so that the dopant concentration is equivalent to that of the pulled crystal, it is possible to obtain a silicon single crystal 8 with a uniform dopant concentration in the crystal length direction. Crystal yield can be improved.
なお、上記実施例においては、開孔３ａ、４ａを設けて
結晶育成室２ａと中間室２ｂ、及び中間室２ｂと原料供
給室２Ｃとを夫々連通させているが、これらの開孔３ａ
、４ａのどちらか一方、または双方にパイプを接続させ
るようにしてもよい。In the above embodiment, the openings 3a and 4a are provided to communicate the crystal growth chamber 2a and the intermediate chamber 2b, and the intermediate chamber 2b and the raw material supply chamber 2C, respectively.
, 4a, or both may be connected to a pipe.
この場合、結晶育成室２ａまたは隔離壁３，４との間の
中間室２ｂ内に位置する原料融液７に添付されたドーパ
ント不純物の濃度を少量の原料供給であってもより一定
に保つようにすることができ、より安定なシリコン単結
晶８の引上げを行うことができる。In this case, the concentration of the dopant impurity attached to the raw material melt 7 located in the crystal growth chamber 2a or the intermediate chamber 2b between the separation walls 3 and 4 is kept more constant even when a small amount of raw material is supplied. Therefore, the silicon single crystal 8 can be pulled more stably.
本発明は上記のような構成であるので、シリコン原料の
供給によって結晶育成室内の融液の温度の低下を効果的
に抑えることができ、これによってシリコン単結晶の引
上げとシリコン原料の供給を同時かつ連続的に行うこと
ができるので、シリコン単結晶の引上げに必要なシリコ
ン原料の損失を少なくして材料の歩留まりを大幅に向上
させることができるといった効果がある。Since the present invention has the above-described configuration, it is possible to effectively suppress a drop in the temperature of the melt in the crystal growth chamber by supplying the silicon raw material, thereby simultaneously pulling a silicon single crystal and supplying the silicon raw material. Moreover, since it can be carried out continuously, it has the effect of reducing the loss of silicon raw material necessary for pulling silicon single crystals and significantly improving the material yield.
第１図は本発明の一実施例を示す縦断正面図（第２図の
１−１線断面図）、第２図は第１図の■−■線断面図、
第３図はこの実施例におけるシリコン原料の供給の前後
における結晶育成室内の原料融液の温度変化を示すグラ
フ、第４図は従来例を示す縦断正面図、第５図は従来例
におけるシリコン原料の供給の前後における結晶育成室
内の原料融液の温度変化を示すグラフである。
１・・・ルツボ、２・・・ルツボ本体、２ａ・・・結晶
育成室、２ｂ・・・中間室、２ｃ・・・材料供給室、３
．４・・・隔離壁、３ａ、４ａ・・・開孔、５・・・原
料供給管、６・・・シリコン原料、
７・・・原料融液、
８・・・シリコン
単結晶。FIG. 1 is a longitudinal sectional front view (sectional view taken along the line 1-1 in FIG. 2) showing an embodiment of the present invention, FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1,
Fig. 3 is a graph showing the temperature change of the raw material melt in the crystal growth chamber before and after supplying the silicon raw material in this example, Fig. 4 is a longitudinal sectional front view showing the conventional example, and Fig. 5 is the silicon raw material in the conventional example. 3 is a graph showing the temperature change of the raw material melt in the crystal growth chamber before and after the supply of . DESCRIPTION OF SYMBOLS 1... Crucible, 2... Crucible main body, 2a... Crystal growth chamber, 2b... Intermediate chamber, 2c... Material supply chamber, 3
．． 4... Separation wall, 3a, 4a... Opening, 5... Raw material supply pipe, 6... Silicon raw material, 7... Raw material melt, 8... Silicon single crystal.
Claims (1)
を成長させて引き上げるシリコン単結晶引上げ用ルツボ
において、ルツボ本体の内部に直径の異なる２つの円筒
状隔離壁を同心状に配置して該ルツボ本体の内部を結晶
育成室、中間室及び材料供給室の３つの部屋に仕切ると
ともに、結晶育成室と中間室、及び中間室と材料供給室
とを夫々互いに連通させたことを特徴とするシリコン単
結晶引上げ用ルツボ。In a silicon single crystal pulling crucible for growing and pulling a silicon single crystal from a silicon raw material melt stored therein, two cylindrical partition walls with different diameters are arranged concentrically inside the crucible body. The interior of the silicon single crystal is partitioned into three chambers: a crystal growth chamber, an intermediate chamber, and a material supply chamber, and the crystal growth chamber and the intermediate chamber, and the intermediate chamber and the material supply chamber are communicated with each other. Crucible for pulling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33934989A JPH03199192A (en) | 1989-12-27 | 1989-12-27 | Crucible for pulling up silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33934989A JPH03199192A (en) | 1989-12-27 | 1989-12-27 | Crucible for pulling up silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03199192A true JPH03199192A (en) | 1991-08-30 |
Family
ID=18326614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33934989A Pending JPH03199192A (en) | 1989-12-27 | 1989-12-27 | Crucible for pulling up silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03199192A (en) |
Cited By (6)
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|---|---|---|---|---|
| JPH09194288A (en) * | 1996-01-12 | 1997-07-29 | Mitsubishi Materials Shilicon Corp | Apparatus for pulling up single crystal |
| US20130233237A1 (en) * | 2007-03-13 | 2013-09-12 | Solaicx, Inc. | Weir method for improved single crystal growth in a continuous czochralski process |
| WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
| US20150144056A1 (en) * | 2013-11-22 | 2015-05-28 | Sunedison, Inc. | Crystal growing systems and crucibles for enhancing heat transfer to a melt |
| KR20150086468A (en) * | 2012-09-10 | 2015-07-28 | 지티 어드밴스드 씨제트 엘엘씨 | Continuous czochralski method and apparatus |
| KR20180126545A (en) * | 2016-03-29 | 2018-11-27 | 코너 스타 리미티드 | Crystal growth apparatus and related method |
-
1989
- 1989-12-27 JP JP33934989A patent/JPH03199192A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100439132B1 (en) * | 1996-01-12 | 2004-08-25 | 미쓰비시 마테리알 가부시키가이샤 | Single crystal pulling device |
| DE19700516B4 (en) * | 1996-01-12 | 2014-03-13 | Mitsubishi Materials Silicon Corp. | Single crystal pulling apparatus |
| JPH09194288A (en) * | 1996-01-12 | 1997-07-29 | Mitsubishi Materials Shilicon Corp | Apparatus for pulling up single crystal |
| US9353457B2 (en) * | 2007-03-13 | 2016-05-31 | Solaicx | Weir method for improved single crystal growth in a continuous Czochralski process |
| US20130233237A1 (en) * | 2007-03-13 | 2013-09-12 | Solaicx, Inc. | Weir method for improved single crystal growth in a continuous czochralski process |
| JP2020109052A (en) * | 2012-09-10 | 2020-07-16 | ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ | Continuous czochralski method and device |
| KR20150086468A (en) * | 2012-09-10 | 2015-07-28 | 지티 어드밴스드 씨제트 엘엘씨 | Continuous czochralski method and apparatus |
| JP2015527295A (en) * | 2012-09-10 | 2015-09-17 | ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ | Continuous Czochralski method and equipment |
| JP2018168060A (en) * | 2012-09-10 | 2018-11-01 | ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ | Continuous czochralski method and apparatus |
| WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
| US9863062B2 (en) | 2013-03-14 | 2018-01-09 | Corner Star Limited | Czochralski crucible for controlling oxygen and related methods |
| CN105247114A (en) * | 2013-03-14 | 2016-01-13 | 爱迪生太阳能公司 | Czochralski crucible for controlling oxygen and related methods |
| US10450670B2 (en) | 2013-03-14 | 2019-10-22 | Corner Star Limited | Methods for growing a crystal ingot with reduced dislocations from a crucible |
| US9822466B2 (en) * | 2013-11-22 | 2017-11-21 | Corner Star Limited | Crystal growing systems and crucibles for enhancing heat transfer to a melt |
| US20150144056A1 (en) * | 2013-11-22 | 2015-05-28 | Sunedison, Inc. | Crystal growing systems and crucibles for enhancing heat transfer to a melt |
| KR20180126545A (en) * | 2016-03-29 | 2018-11-27 | 코너 스타 리미티드 | Crystal growth apparatus and related method |
| JP2019509970A (en) * | 2016-03-29 | 2019-04-11 | コーナー・スター・リミテッドＣｏｒｎｅｒ Ｓｔａｒ Ｌｉｍｉｔｅｄ | Crystal growth apparatus and related methods |
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