JPH09164716A - Electric charge generation control element and drive thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control the sticking of a product produced in an atmosphere by a corona discharge phenomenon or a product produced by the scraping action of a dielectric membrane to an electrode or an insulating membrane. SOLUTION: This electric charge generation control element is composed of a line electrode formed on the surface of an insulating substrate 1, a dielectric membrane 3 formed on the surface of the line electrode 2, a finder electrode 4 with a finger hole 5 formed through the dielectric membrane 3 and a screen electrode 9 with a screen hole 10 formed on the finger electrode 4 through a first insulating membrane 8 with a hole formed in the center. In addition, a titanium membrane 6 as a heating element is formed on the finger electrode 4 around the finger hole 5, holding a second insulating membrane 7, and is energized to heat it upto about 100 deg.C so that the element is driven.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge generation control element constituting an electrostatic image forming apparatus used for electrostatic printing and a driving method thereof.

[0002]

2. Description of the Related Art Conventionally, a charge generation control element utilizing corona discharge has been used as a method for forming a latent image by electrostatic charges on a dielectric recording body by the principle of transferring charges directly onto the dielectric recording body and depositing them. Is disclosed in Japanese Patent Publication No. 2-62862, and such a charge generation control element is
The method of forming high definition using semiconductor fine processing technology,
It is proposed in Japanese Patent Application No. 6-288580, which is the application of the present applicant.

FIG. 29 is a sectional view showing a structural example of a charge generation control element for a conventional electrostatic image forming apparatus. In FIG. 29, reference numeral 100 denotes one charge generation control element, and a large number of charge generation control elements 100 are arranged one-dimensionally or two-dimensionally to form a charge generator. The charge generation control device 100 includes a substrate 101 made of quartz or glass, a line electrode 102 made of metal, a dielectric film 103, a finger electrode 104 made of metal, and a first insulating film 105 (note that
Although this insulating film is formed of a single layer, it will be referred to as a first insulating film in view of the present invention) and a screen electrode 106, and a finger electrode 104 and a screen electrode 106 are formed. Has finger holes 107 and screen holes 108, respectively.

The charge generation control device 100 having the above-described configuration
Each of the electrodes constituting the is formed by forming a resist pattern on the metal film formed by a method such as a sputtering method or a vacuum deposition method, and then removing the portion not covered by the resist pattern by etching. Has become. For the dielectric film 103, a material having a high electrostatic withstand voltage such as a silicon oxide film or a silicon nitride film formed by a method such as a CVD (chemical vapor deposition) method or a sputtering method is used. For the first insulating film 105, a resin having high heat resistance such as polyimide is used.

Next, the operation of the thus-configured charge generation control device 100 will be described. In FIG. 29,
By applying an AC voltage between the line electrode 102 and the finger electrode 104, which are arranged with the dielectric film 103 in between, a charge group is generated in the region of the finger hole 107 due to the corona discharge phenomenon. Negative charges having a large mobility in the charge group are used for latent image formation. When a positive potential higher than the potential applied to the finger electrode 104 is applied to the screen electrode 106 facing the finger electrode 104 with the first insulating film 105 interposed, the negative charge generated by the corona discharge is It is extracted through the screen hole 108 formed in the screen electrode 106. The negative charges extracted from the screen holes 108 are accelerated toward a drum (not shown), which is a dielectric recording body, and are deposited on the drum to form a latent charge image. Conversely, when a negative potential is applied to the screen electrode 106 with respect to the finger electrode 104, extraction of negative charges from the screen hole 108 is blocked, and a latent image is not formed on the drum.

[0006]

However, the conventional charge generation control element for an electrostatic image forming apparatus has the following problems. That is, when the charge generation control element is driven, a high electric field of several MV / cm is generated inside the dielectric film 103, and the surface of the dielectric film 103, which is the bottom surface in the finger hole 107, is generated by corona discharge. When exposed to the plasma, there is a problem that the surface layer is scraped as shown in FIG. Therefore, the product generated by the scraping adheres on the finger electrode 104 or on the inner wall of the hole of the first insulating film 105 as the adhered matter 110, and changes the electric field distribution. Therefore, the negative charge generated by the corona discharge also changes with time. Change and significantly deteriorate the characteristics or reliability of the charge generation control element.

Further, not only the product generated by scraping the surface layer of the dielectric film 103, but also the screen hole 108 or the finger hole 107, and further contained in the atmosphere existing in the hole portion of the first insulating film 105. Moisture, oxygen, nitrogen, etc., are dissociated by corona discharge to form nitric acid (HNO ₃ ), which adversely affects the electrode or the insulating film and significantly deteriorates the reliability of the charge generation control element.

Further, the corona discharge generated inside the finger holes is confined by the electric field, but some positive or negative ions leak from there and are sputtered on the side wall of the first insulating film 105 or the like. As a result, the first insulating film 105 is etched, and the side wall recedes as indicated by reference numeral 111, making it difficult to extract negative charges from the screen hole 108, which significantly deteriorates the characteristics of the charge generation control element.

In order to avoid these problems, it is conceivable that the entire charge generator is evacuated and the atmosphere in the screen holes or finger holes, and further in the holes of the first insulating film is set to a vacuum state. The device itself becomes large and is not suitable for downsizing and cost reduction.

Japanese Patent Publication No. 5-278258 proposes that the charge generator itself be heated from the back surface of the substrate or the like to remove water in the atmosphere and suppress the generation of products such as nitric acid. Since the temperature of the entire charge generator rises, it is difficult to control the temperature, and a means for insulating the charge generator is required, which causes a problem that the device becomes large.

The present invention has been made to solve the above-mentioned problems of the conventional charge generation control element for an electrostatic image forming apparatus, and can stably output negative charges generated by corona discharge for a long period of time. It is an object of the present invention to provide a charge generation control element and a method of driving the same.

The purpose of each claim is as follows. That is, the inventions of claims 1 and 3 suppress the adhesion of the product in the atmosphere due to corona discharge or the product produced by scraping the dielectric film to the electrode or the first insulating film. An object of the present invention is to provide a charge generation control element capable of According to the second aspect of the present invention, it is possible to prevent the products generated by the scraping of the dielectric film due to corona discharge and the ions due to corona discharge from adhering to or directly irradiating the side walls of the holes of the first insulating film. An object is to provide a possible charge generation control element. A fourth aspect of the present invention is intended to provide a material suitable for the electrode film serving as the heating resistor in the first to third aspects of the invention. The invention according to claim 5 is,
In the invention described in 4, the removal of water and the like from the corona generating part,
Alternatively, it is intended to provide an optimal driving method for removing products.

[0013]

In order to solve the above problems, the invention according to claim 1 provides a line electrode formed on the surface of an insulating substrate, and a dielectric film formed on the surface of the line electrode. A finger electrode formed in the upper portion of the dielectric film and having a hole for charge generation in the center, and a first insulating film having a hole in the center of the finger electrode for allowing charges to pass therethrough. In addition, in the charge generation control element including a screen electrode having a hole for discharging charges in the center, a second electrode is provided on the finger electrode around the finger hole.
The metal film serving as a heating resistor is formed by sandwiching the insulating film.

In the charge generation control element thus constructed, the metal film serving as the heat-generating resistor is electrically heated before the start of corona discharge, whereby water is removed from the atmosphere in the finger holes, and the reaction at the time of corona discharge occurs. Generation of products can be suppressed, and the reliability of the charge generation control element can be improved.

According to a second aspect of the present invention, in the charge generation control element according to the first aspect, the metal film serving as the heating resistor is formed thicker than the thickness of the finger electrodes. As a result, it is possible to prevent the ions of corona discharge from directly irradiating the side wall of the bottom surface of the hole of the first insulating film, and to suppress the receding of the side wall of the first insulating film. It is possible to realize a charge generation control element having high performance and operational stability. From the aspect of the electric field distribution, particularly, by forming the metal film to be thicker than the thickness of the finger electrodes, ion irradiation to the side wall is effectively suppressed.

According to a third aspect of the present invention, the line electrode formed on the surface of the insulating substrate, the dielectric film formed on the surface of the line electrode, and the electric charge generated at the center formed on the dielectric film are generated. Electrode having a hole portion for discharge, and a screen electrode having a hole portion for discharging charge in the center formed on the surface of the finger electrode via a first insulating film having a hole portion for allowing charge to pass through in the center A charge generation control element including a first electrode formed on the finger electrode.
A metal film serving as a heating resistor is embedded and arranged in the insulating film. Thereby, by electrically heating the metal film to be the heating resistor before the start of corona discharge, moisture is removed from the atmosphere in the finger holes, and the generation of reaction products during corona discharge can be suppressed. The reliability of the charge generation control element can be improved.

According to a fourth aspect of the present invention, in the charge generation control element according to any one of the first to third aspects, the metal film serving as a heating resistor is made of Ti, W, Mo, Ta or the like. It is composed of a melting point metal or an exothermic metal such as Ni or Ni-Cr. Thereby, the metal film which becomes a suitable heating resistor can be formed.

According to a fifth aspect of the present invention, in the method for driving the charge generation control element according to any one of the first to fourth aspects, the metal film serving as a heating resistor is driven while being heated to about 100 ° C. To do. As a result, water in the atmosphere is effectively removed, and the charge generation control element can be driven in an optimum state while suppressing the generation of reaction products during corona discharge.

[0019]

Next, an embodiment will be described. FIG. 1 is a sectional view showing a first embodiment of a charge generation control element according to the present invention. In the figure, 1 is an insulating substrate made of quartz or glass, 2 is a line electrode made of metal, 3 is a dielectric film, 4 is a finger electrode made of metal having a finger hole 5 at the center, and 6 is a finger hole 5.
A metal film serving as a heat-generating resistor formed on the finger electrodes 4 in the vicinity of, via the second insulating film 7, and formed to be thicker than the film thickness of the finger electrodes 4. Reference numeral 8 is a first insulating film, and 9 is a screen electrode made of metal having a screen hole 10 at the center.

In the charge generation control element thus constructed, a predetermined current is applied to the metal film 6 and the temperature is partially raised to 100 ° C.
By heating to a moderate temperature, water in the atmosphere, which has been a problem in the past, can be removed, and the generation of reaction products can be suppressed. Further, it is possible to suppress the adhesion of the reaction product or the like generated by the reaction of the surface layer of the dielectric film 3 with the moisture in the air to the side wall of the finger electrode 4 or the first insulating film 8 and to prevent corona discharge. Since it is possible to reduce the time-dependent change of the generated negative charges, stable output characteristics can be obtained. In addition, the metal film 6 is replaced with the finger holes 5
Since it is formed thicker than the film thickness of the finger electrode 4 on the periphery of the first insulating film 8 due to sputtering of ions leaked during corona discharge, which has been a problem in the past, onto the first insulating film 8. Even if the side wall of the hole portion recedes, a stable output characteristic can be obtained by playing a role of a prevention wall, and reliability can be improved.

Next, a method of manufacturing the charge generation control element according to the first embodiment shown in FIG. 1 will be described with reference to the manufacturing process drawings shown in FIGS. First, as shown in FIG. 2, a line electrode film 12a made of a titanium film having a thickness of about 0.5 μm is formed on an insulating substrate 11 made of quartz (or NA glass, Al ₂ O ₃ ) by a sputtering method or the like. To do. Next, as shown in FIG. 3, the line electrode 12 is formed by removing the portion of the line electrode film 12a made of a titanium film that is not covered with the resist pattern 13 by isotropic or anisotropic etching. . Next, as shown in FIG. 4, after removing the resist pattern 13, a silicon film is formed as the dielectric film 14 by a method such as a plasma CVD method, for example, a reaction between monosilane (SiH ₄ ) and nitrous oxide (N ₂ O). Form an oxide film. The dielectric film 14 made of this silicon oxide film is required to have a predetermined thickness (3 to 6 microns) capable of withstanding the high voltage applied between the line electrode 12 and the finger electrode 15 described below. Next, as shown in FIG. 5, a finger electrode film 15a made of a titanium film having a thickness of about 1.5 microns is formed by a sputtering method or the like. Next, as shown in FIG. 6, the resist pattern of the finger electrode film 15a made of titanium film
By removing the portion not covered with 16 by isotropic or anisotropic etching, the finger holes 22
To form the finger electrode 15.

Next, as shown in FIG. 7, a resist pattern
After removing 16, the silicon oxide film is formed by plasma CVD to 0.5% by the same method as that for forming the dielectric film 14.
The second insulating film 17 is deposited on the entire surface of the substrate by depositing it to a thickness of about micron. Next, as shown in FIG. 8, a titanium film having a thickness of about 1.5 μm is formed by a sputtering method or the like.
Form 18. Next, as shown in FIG. 9, a resist 19 is used to form a strip-shaped pattern with a width of about 2 microns along the circumference of the finger hole 22. The position of this strip-shaped pattern is within 1 micron from the edge of the finger hole 22. Next, the titanium film 18 is etched by isotropic or anisotropic etching, and then the second insulating film 17 made of a silicon oxide film is removed by anisotropic etching.
Next, as shown in FIG. 10, the first insulating film 20 is formed of a material having excellent heat resistance such as polyimide, and a screen electrode 21 having a screen hole 23 is sequentially formed. A charge generation control element having a similar structure is completed.

In the first embodiment, the titanium film formed by the sputtering method is used for the line electrodes, finger electrodes and screen electrodes, but the metal film is not limited to this titanium film and can withstand high voltage and corona discharge. Any material such as molybdenum or tungsten may be used by sputtering or CVD. Further, although the silicon oxide film formed by the plasma CVD method is used as the dielectric film, the invention is not limited to this, and rather the end point detection during etching is better when the film quality is different from that of the second insulating film. Therefore, any film can be used as long as it has a dielectric strength, such as boron (B), phosphorus (P), aluminum (Al), silicon (Si), titanium (Ti), tantalum (Ta), tungsten (W), zirconium ( Zr
), Calcium (Ca), hafnium (Hf), vanadium (V), niobium (Nb), chromium (Cr), magnesium (Mg), lead (Pb), tin (Sn) and other oxides, carbides and nitrides The film may be any film formed of any one of these compounds, or a compound film of those compounds.
In this embodiment, the titanium film is used as the metal film serving as the heating resistor, but the present invention is not limited to this, and a metal film made of a refractory material such as tungsten, molybdenum, or tantalum is used. In addition, a metal film using a metal heating material such as chromium or nickel-chromium may be used.

In the present embodiment, a metal film serving as a heating resistor is formed on the finger electrodes around the finger holes with the second insulating film interposed therebetween, and the metal film is heated to about 100 ° C. It suppresses the generation of reaction products in the atmosphere due to, and the products produced by scraping the dielectric film are
It is possible to suppress the adhesion to the electrode or the first insulating film, and further, the metal film serves as a wall for preventing ion irradiation.
It is possible to suppress the receding of the side wall of the insulating film. As a result, since corona discharge can be stably performed, durability and reliability are significantly improved. Moreover, since the metal film serving as the heating resistor is formed inside the charge generation control element, the temperature control is easy and the influence on the charge generation can be made very small. Further, a charge generation control element that can be simplified and downsized can be obtained in the device itself.

FIG. 11 is a schematic view of a charge generator, in which the charge generation control elements according to the first embodiment are arranged two-dimensionally, as viewed from above. However, the screen electrodes and screen holes are not shown for the sake of explanation. In FIG. 11, reference numeral 31 denotes an array section in which the charge generation control elements 30 are two-dimensionally arranged. Reference numeral 32 denotes an H-direction scanner composed of MOSFETs or bipolar transistors. The H-direction scanner 32 selects / selects via a large number of switch selection lines 33.
A signal for determining non-selection is applied. In addition, 34 is a V-direction scanner, which has a large number of line selection lines.
A signal is applied via 35. The metal film 36, which is a strip-shaped resistor and is formed on the finger electrodes around the finger holes of the charge generation control element 30, is connected in series and is connected to the electrode pads 37 and 38 for energization.

Next, the operation of the charge generator configured as described above will be described. First, before operating the charge generator, a predetermined current is applied to the electrode pads 37, 38 for energization to heat the metal film 36 formed around the finger holes of each charge generation control element 30 to about 100 ° C. Moisture and the like in the finger holes and the holes of the first insulating film are removed. After that, when a selection pulse is applied to the L-th line selection line 35 by the V-direction scanner 34, an AC voltage of about several thousand and several hundred volts is generated at the line electrode connected to the line selection line 35. That is, corona discharge occurs. In this state, when a finger selection pulse is applied by the H-direction scanner 32 via the Fth switch selection line 33, (L, F).
When it is desired to extract the charge to the drum side at the address, the potential of the finger electrode coupled to the selection line 33 may be set to a negative potential with respect to the screen electrode (not shown). On the other hand, when it is not extracted, it is set to a positive potential with respect to the screen electrode. After that, H-direction scanner
Scanning by which the F, F + 1, F + 2 ... th switch selection line 33 is turned on by 32 is performed, electrons are sequentially emitted from the charge generation control element 30 in the Lth row, and the charge generation control element in the Lth row is generated. The electron emission from 30 ends. When the electron emission from the charge generation control element 30 in the Lth row is completed, the operation of the charge generation control element 30 in the L + 1th row is similarly started. In addition, a predetermined current may be applied to the current-carrying electrode pads 37 and 38 during operation of the charge generation control element, or may be applied intermittently to heat the metal film serving as a resistor to about 100 ° C. However, it is possible to prevent products from being generated in the finger holes and the holes of the first insulating film.

Next, the charge generation control element according to the second embodiment and the method of manufacturing the same will be described with reference to the manufacturing process diagrams of FIGS. First, as in the first embodiment, as shown in FIG. 12, a titanium film having a thickness of about 0.5 μm is formed on an insulating substrate 41 made of quartz (NA glass, Al ₂ O ₃ ) by a sputtering method or the like. Then, the line electrode film 42a is formed. Next, as shown in FIG. 13, the line electrode 42 is formed by removing a portion of the line electrode film 42a made of a titanium film, which is not covered with the resist pattern 43, by isotropic or anisotropic etching. . Next, as shown in FIG. 14, after removing the resist pattern 43,
As the dielectric film 44, a silicon oxide film is formed by a method such as plasma CVD, for example, by reacting monosilane (SiH ₄ ) with nitrous oxide (N ₂ O). The dielectric film 44 made of this silicon oxide film needs to have a predetermined thickness (3 to 6 microns) capable of withstanding the high voltage applied between the line electrode 42 and the finger electrode described below. Next figure
As shown in 15, a finger electrode film 45a made of a titanium film having a thickness of about 1.5 μm is formed by a sputtering method or the like.

Next, as shown in FIG. 16, a silicon oxide film is deposited to a thickness of about 0.5 μm by plasma CVD by the same method as that used to form the dielectric film 44.
The insulating film 46 is formed on the entire surface of the substrate. Next, as shown in FIG. 17, a resist pattern 47 in the shape of a finger electrode is formed. At this time, the resist pattern 47 is used to form the second insulating film.
46 is removed by wet or dry etching, and then the finger electrode film 45a made of a titanium film is etched by wet or dry etching to form a finger electrode 45 having finger holes. Next, as shown in FIG. 18, after removing the resist pattern 47, a titanium film 48 is formed on the entire surface of the substrate by a method such as sputtering.
Form about 5 microns. Next, as shown in FIG. 19, a resist pattern 49 is formed around the finger holes in a band shape of about 2 μm. Next, as shown in FIG. 20, the titanium film 48 is etched by wet or dry etching. At this time, since the finger electrode 45 is covered with the second insulating film 46, it is not etched. Next figure
As shown in 21, the first insulating film 50 is formed of a material having excellent heat resistance such as polyimide, and the screen electrode 51 having the screen holes 53 is sequentially formed, whereby the charge generation control element is completed.

In the present embodiment, the finger holes 52
A titanium film 48, which serves as a heating resistor, is formed on the finger electrodes 45 in the vicinity of, with the second insulating film 46 sandwiched between them, and the titanium film 48 is partially heated to about 100 ° C. in the atmosphere by corona discharge. Product or the product generated by scraping the dielectric film 44 can be suppressed from adhering to the electrode or the first insulating film 50, and the corona discharge can be stably performed, so that durability and reliability are improved. Is greatly improved. Further, since the second insulating film 46 is formed on the entire surface of the finger electrode 45, the adhesion with the polyimide film, which is the first insulating film 50, is excellent and the reliability can be greatly improved. .

Next, a third embodiment will be described.
22 is a cross-sectional view showing the third embodiment. The same components as those of the first embodiment shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. In the charge generation control element of this embodiment, the metal film 6 serving as a heating resistor is embedded in the first insulating film 8 formed on the finger electrodes 4 and arranged.

The metal film 6 thus embedded in the first insulating film 8 is heated at about 100 ° C. by applying a predetermined current in the same manner, so that the metal film 6 in the vicinity of the hole of the first insulating film 8 is heated. Water in the atmosphere can be removed, generation of reaction products can be suppressed, and stable output characteristics can be obtained.

Next, a method of manufacturing the charge generation control element according to the third embodiment shown in FIG. 22 will be described with reference to the manufacturing process drawings shown in FIGS. After the line electrode 62 and the dielectric film 63 are formed on the insulating substrate 61 made of quartz or the like by the same method as the manufacturing method of the first and second embodiments,
As shown in FIG. 23, a finger electrode 64 having a finger hole 65 made of a titanium film having a thickness of about 1.5 μm is provided.
To form Next, as shown in FIG. 24, the lower film 66-1 of the first insulating film 66 is made of a material having excellent heat resistance such as polyimide.
It is formed by performing spin coating and heat treatment so as to obtain a film thickness of about micron. Next, a titanium film 67 of about 1.5 μm is formed on the entire surface of the substrate by a method such as sputtering. Next, as shown in FIG. 25, an oxide film (silicon oxide film) 68 is formed on the entire surface of the titanium film 67 by a method such as plasma CVD.
Form about 1.0 micron. Next, the oxide film 68 in the portion not covered with the resist pattern 69 is removed by wet or dry etching. The resist pattern 69
Is set so that the titanium film 67 does not appear on the side wall inside the hole of the first insulating film due to the etching of the first insulating film in a later step. Next, as shown in FIG. 26, after removing the resist pattern 69, the titanium film 67 is removed by wet or dry etching using the oxide film 68 as a mask. Next, as shown in FIG. 27, the finger electrode 64 is left with the oxide film 68 left.
40 so that the specified insulation film thickness is between the
An upper film 66-2 of the first insulating film 66 having excellent heat resistance such as polyimide of about micron is formed by spin coating and heat treatment. Next, as shown in FIG. 28, after forming the screen electrode 70 having the screen hole 71, the first insulating film 66 is formed.
Is dry-etched using the screen electrode 70 as a mask to complete the charge generation control element.

In the present embodiment, the first insulating film 66
A titanium film 67, which serves as a heating resistor, is embedded in the product, and by partially heating to about 100 ° C, products in the atmosphere due to corona discharge or products produced by scraping the dielectric film are generated. Further, it is possible to suppress the adhesion to the electrode or the first insulating film, and since the corona discharge can be stably performed, durability and reliability are significantly improved.

[0034]

As described above based on the embodiments, according to the inventions of claims 1 to 5, the second insulating film is provided on the finger electrodes around the finger holes or the first insulating film is provided. A metal film, which is embedded in the insulating film and serves as a heating resistor, is provided. By heating to about 100 ° C, products in the atmosphere due to corona discharge or products produced by scraping the dielectric film But electrode or first and second
Can be suppressed from adhering to the insulating film. Further, the metal film serving as the resistor can be formed by a series of processes for manufacturing the charge generation control element, and locally heats the place where the product is generated or adheres, so that the influence on the corona discharge is small. Further, the side wall of the first insulating film can be prevented from receding due to ion irradiation by corona discharge, and the corona discharge can be stably performed, so that the charge generation control element for an electrostatic image forming apparatus is excellent in durability and reliability. Can be realized.

[Brief description of the drawings]

FIG. 1 is a cross-sectional perspective view showing a first embodiment of a charge generation control element according to the present invention.

FIG. 2 is a diagram showing a manufacturing process for explaining the manufacturing method of the charge generation control device according to the first embodiment shown in FIG.

FIG. 3 is a view showing a manufacturing process following the manufacturing process shown in FIG. 2;

FIG. 4 is a view showing a manufacturing process following the manufacturing process shown in FIG. 3;

FIG. 5 is a view showing a manufacturing process subsequent to the manufacturing process shown in FIG. 4;

FIG. 6 is a view showing a manufacturing process subsequent to the manufacturing process shown in FIG. 5;

FIG. 7 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 6;

FIG. 8 is a view showing a manufacturing process subsequent to the manufacturing process shown in FIG. 7;

9 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 8. FIG.

FIG. 10 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 9.

FIG. 11 is a diagram showing a schematic configuration of a charge generator configured by arranging the charge generation control elements of the first embodiment shown in FIG. 1 in a two-dimensional array.

FIG. 12 is a diagram showing a manufacturing process for explaining the charge generation control device according to the second embodiment and the manufacturing method thereof.

FIG. 13 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 12.

14 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 13.

15 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 14.

16 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 15.

FIG. 17 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 16.

18 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 17.

FIG. 19 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 18.

20 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 19.

FIG. 21 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 20.

FIG. 22 is a cross-sectional perspective view showing the charge generation control element according to the third embodiment.

FIG. 23 is a diagram showing a manufacturing step for explaining a manufacturing method for the charge generation control element according to the third embodiment shown in FIG. 22.

24 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 23.

25 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 24.

26 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 25.

27 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 26.

FIG. 28 is a diagram showing a manufacturing process that follows the manufacturing process shown in FIG. 27.

FIG. 29 is a cross-sectional view showing a conventional charge generation control element.

FIG. 30 is an explanatory diagram for explaining a problem of the conventional charge generation control element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Line electrode 3 Dielectric film 4 Finger electrode 5 Finger hole 6 Titanium film 7 Second insulating film 8 First insulating film 9 Screen electrode 10 Screen hole 11 Insulating substrate 12a Line electrode film 12 Line electrode 13 Resist pattern 14 Dielectric film 15a Finger electrode film 15 Finger electrode 16 Resist pattern 17 Second insulating film 18 Titanium film 19 Resist pattern 20 First insulating film 21 Screen electrode 22 Finger hole 23 Screen hole 30 Charge generation control element 31 Array part 32 H direction Scanner 33 Switch selection line 34 V direction scanner 35 Line selection line 36 Metal film 37, 38 Electrode pad 41 Insulating substrate 42a Line electrode film 43 Resist pattern 44 Dielectric film 45a Finger electrode film 45 Finger electrode 46 Second insulating film 47 Resist pattern 48 Titanium film 49 Resist pattern 50 First insulating film 51 Screen Electrode 52 finger hole 53 screen hole 61 insulating substrate 62 line electrode 63 dielectric film 64 finger electrode 65 finger hole 66 first insulating film 66-1 lower film of first insulating film 66-2 upper part of first insulating film Film 67 Titanium film 68 Oxide film 69 Resist pattern 70 Finger hole 71 Screen hole

Claims (5)

[Claims] 1. A line electrode formed on the surface of an insulating substrate, a dielectric film formed on the surface of the line electrode, and a hole for charge generation in the center formed on the dielectric film. A charge generation control element comprising a finger electrode and a screen electrode having a hole for discharging charges in the center formed on a surface of the finger electrode via a first insulating film having a hole for allowing charges to pass through in the center. In the charge generation control element, the metal film serving as a heating resistor is formed on the finger electrodes around the finger holes with the second insulating film interposed therebetween. 2. The charge generation control element according to claim 1, wherein the metal film serving as the heating resistor is formed thicker than the thickness of the finger electrodes. 3. A line electrode formed on the surface of an insulating substrate, a dielectric film formed on the surface of the line electrode, and a hole for charge generation in the center formed on the dielectric film. A charge generation control element comprising a finger electrode and a screen electrode having a hole for discharging charges in the center formed on a surface of the finger electrode via a first insulating film having a hole for allowing charges to pass through in the center. In the charge generation control element, the metal film to be a heating resistor is embedded in the first insulating film formed on the finger electrode. 4. The metal film serving as the heating resistor is titanium (Ti), tungsten (W), molybdenum (Mo).
), Tantalum (Ta) or other refractory metal, or nickel (Ni), nichrome (Ni-Cr) or another exothermic metal. Charge generation control element. 5. The method of driving a charge generation control element according to claim 1, wherein the metal film serving as the heating resistor is driven while being heated to about 100 ° C. And a method for driving the charge generation control element.