JPH09161640A - Latch ( latching ) type heat-driven microrelay device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an extremely small micro-relay capable of being integrated and having low contact resistance by changing the internal pressure of a storage chamber via a temperature difference, moving a conductive liquid metal in a channel, and closing or opening signal electrodes. SOLUTION: Power is applied to the heater 12 of an active storage chamber 10 or the heater 42 of a passive storage chamber 40, the internal pressure of the storage chamber is changed by temperature, a liquid metal 50 is moved in a channel 20, and signal electrodes 34, 35 or 31, 32 are closed or opened. When power is selectively applied to the heater 12 or 42, the signal can be turned on or off. This latching heat-driven micro-relay element can be integrated in a silicon wafer bulk by the technique such as macro-burnishing, electroplating, and conductor process, and an extremely small micro-relay capable of being integrated and having small contact resistance can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a latch.
ing) type thermal drive micro relay element,
More specifically, the present invention relates to a latch-type thermally actuated micro-relay that can be miniaturized and manufactured so that it can be integrated with other electronic components, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Generally, a relay for relaying an electrical signal transmits a electrical signal from one contact to another contact by connecting a conductor between two contacts by means of electronic force or pressure. It is one of the electrical components that

Conventional relays are used to open electric current in a wide range of application fields such as electronic exchanges, automatic chargers, and traffic signal control systems.
Although it is used as a switching element for closing, it is inconvenient to use because it is large in size and expensive, and it is not possible to configure a relay array and it is difficult to integrate it with other electronic components.

That is, in the conventional relays, which are generally used, a method is used in which a switch is turned on / off mainly by a driving coil and an electronic force generated by a voltage applied to the driving coil.

[0005]

However, with the development of electronic technology, miniaturization of electronic parts has progressed, and a circuit must be constructed by installing a relay on the same circuit board as these electronic parts. The need is increasing.

[0006] Therefore, development of a micro relay, which can be integrated on a semiconductor substrate while reducing the size of a conventional relay, has been advanced.

In order to satisfy the above conditions, the size must be a few mm or less and be small, and it must be possible to integrate with other electronic parts.

In order to satisfy these requirements, a semiconductor process technology must be used to develop a relay that can be manufactured in a shape having a fine structure.

As an example of a prior art relay, the proposed European patent EP-573267 is magnetic (mag).
The contact resistance cannot be reduced to 1Ω or less because a metal is used for the signal electrode portion.
It has the disadvantage that the relay array structure is complicated.

In 1995, Transducer magazine (T
Jay. The power failure driving micro relay of J. Drake has a problem in practical use because the driving voltage is 50 V or more and the contact resistance is 2Ω.

Therefore, an object of the present invention to solve the above-mentioned problems of the prior art is to maintain the contact resistance of 1 Ω or less at the liquid metal contact, semiconductor process technology, surface of silicon wafer and bulk micro. An object of the present invention is to provide an ultra-compact microrelay that can be integrated by a wet etching method using machining.

[0012]

SUMMARY OF THE INVENTION To achieve the above object, the present invention relates to an active storage having a predetermined volume in a bulk of a semiconductor substrate and having a heater 12 for heating air therein. , A passive storage container having the same volume, which is separated from the active storage container by a predetermined distance and has a heater installed therein, and a contact metal extended to a space between the active storage container and the passive storage container. A channel serving as a moving path for the liquid metal 50, a first signal electrode spaced apart from each other and having one end inserted into the channel from a predetermined region of the channel and extending to the outside; and the first signal electrode described above. And a second signal electrode that is formed in the same shape and is separated by a constant distance, and a liquid that is mounted inside the above channel and serves as a contact point between the first signal electrode and the second signal electrode. And metal, on a semiconductor substrate, on which is bonded to the lower surface, characterized in that it comprises a lower glass substrate.

[0013]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a plan view schematically showing a planar structure of a heat-actuated micro-relay according to the present invention, and FIG. 2 is a plane layout of a latch-type heat-actuated micro-relay element of the present invention.

First, referring to FIG. 1 and FIG. 2, the heat-driven micro relay according to the present invention includes an active storage container 10 having a predetermined volume and a passive storage container having the same volume as the active storage container 10 and having a predetermined interval. A storage 40 is formed.
A channel 20 is formed between the active store 10 and the passive store 40 as a flow passage having a predetermined diameter. A microchannel region 21 having a diameter smaller than that of the above channel is formed in the middle of the channel 20. A liquid metal 50 is mounted inside the channel 20.

The operating principle of a heat-driven micro-relay having a structure as shown in FIG. 1 is that the active storage of the relay is active.
When the pressure of the reservoir 10 rises, the liquid metal 50 used for the electrode contact of the relay mounted inside the channel is transferred to the passive reservoir.
When the pressure of the passive storage 40 increases, the liquid metal comes back to the original position on the active storage 10 side.

This will be described in more detail. The shape of the liquid metal 50 in the microchannel region 21 is the liquid metal 50.
The pressure required to drive this liquid metal, determined by the surface tension of the liquid and its affinity for silicon, is in the channel 20.
It is represented by the sum of the pressure for injecting the liquid metal into and the pressure with respect to the volume ratio of the reservoir and the microchannel region 21.

Liquid metal 5 in the microchannel region 21
The pressure P for driving 0 is expressed by the following equation.

[0019]

[Equation 1]

At this time, P is a liquid metal 5 in the channel 20.
The pressure required to drive 0, γ _1, is the surface tension (su
rface tension), D is the channel diameter,
θ _c is the contact angle of liquid metal
e).

When 50 droplets of the liquid metal move by the distance x in the micro relay device as shown in FIG. 1, the pressure and volume of the active reservoir 10 fluctuate, and the distance that the liquid metal 50 can move is limited.

The pressure and volume of the active storage 10 are P ₁ (V
₁ (x = 0)) to Pa, Va (x = x), and the pressure and volume of the passive storage 40 from P ₀ , V ₀ (x = 0) to P _p ,
Assuming that the pressure has changed to V _p (x = x), the atmospheric pressure at this time is P ₀
Then, the pressure with respect to the volume ratio is expressed in a mathematical formula as follows.

[0023]

(Equation 2)

[0024]

(Equation 3)

[0025]

(Equation 4)

[0026]

(Equation 5)

[0027]

(Equation 6)

In the above formula, V ₁ + A _c x = V ₀ , V ₁ = kA
Assume _c x. A _c is a cross-sectional area of the microchannel region 21 portion of the microrelay element.

Therefore, the pressure for driving the liquid metal 50 by the micro relay element is represented by P2 in the equation (7) which is the sum of the equations (1) and (6).

At this time, PV / is calculated according to Boyle's law and Charles's law.
Since T = constant, the temperature difference required for pressure change is expressed by the following formula.

[0031]

(Equation 7)

[0032]

(Equation 8)

As a result, the pressure increases due to a change in temperature, which causes the liquid metal 50 to move in the channel 20 of the relay element, thereby obtaining the operating characteristics of the relay element capable of conducting and interrupting an electrical signal. .

FIG. 2 is a detailed view showing a heat-driven micro relay element according to the present invention on a plane.

With reference to FIG. 2, the detailed structure of the heat-driven micro-relay element according to the present invention will be described.

The thermally actuated micro-relay according to the present invention has a certain volume in a predetermined area of the semiconductor substrate 100, and the heater 12 is installed in a cantilever shape on the bottom surface thereof. An active storage 10 having a heater support 14 which is intermittently advanced in a line in one direction below the passage line of the heater 12, and a heater 42 which is separated from the active storage 10 at a predetermined interval. The passive storage 4 in which the heater support base 44 is installed in the same shape as the active storage 10.
0 is formed. Active store 10 and passive store 40
A channel 20 is formed as a flow passage therebetween.
The overall configuration of this channel 20 is as follows.
That is, the micro channel 21 having a diameter smaller than that of the channel 20 is formed in the intermediate region. First between the active storage 10 and the microchannel area 21
A channel area 22 is installed. Passive storage 40
A second channel region 23 is formed between the microchannel region 21 and the microchannel region 21. The first channel region 22 is
On the side of the active storage 10, the first narrow channel region 24 is formed by two narrow channels, and the two narrow channels are extended to one narrow channel.
Is connected to The second channel region 23 is formed of two narrow channels on the side of the passive storage 40, and the two narrow channels are extended into one narrow channel region 25.
Contains.

Then, in the first channel region 22, the first signal electrodes 31 and 32 and the second signal electrodes 32 and 32, which are separated into two electrodes as signal electrodes traveling from the inside to the outside, are separated from each other.
Second signal electrodes 34 and 35, which are two electrodes having the same shape as the first signal electrodes 31 and 32, are formed in the channel 23.

The liquid metal 50 is mounted inside the channel 20 as a conductive contact metal.

FIG. 3 is a sectional view of the latch type microrelay taken along the line AA of FIG.

The sectional structure of the latch type micro relay according to the present invention will be described with reference to FIG.

An active storage 10 having a predetermined area and depth is arranged in a predetermined region on the surface of the semiconductor substrate 100. A heater 12 for heating the inside air is installed on the bottom surface of the inside thereof so as to pass over the heater support base 14.

A passive storage 40, which is separated from the active storage 10 by a predetermined distance and has a heater 42 and a heater support 44 having the same shape, is installed.

A channel 20 is formed by a groove between the active storage 10 and the passive storage 40 up to a portion 20L indicated by a dotted line in FIG.
(Not shown) is formed.

The first signal electrodes 31 and 32 and the second signal electrodes 34 and 35, which are separated from each other by a predetermined distance in the traveling direction of the channel 20 (not shown) and face each other in the same direction.
Is installed.

Then, oxide films 112 and 114 are formed between the first signal electrodes 31 and 32 and the second signal electrodes 34 and 35 and the semiconductor substrate 100 for insulation.

On the surface of the semiconductor substrate 100, the active storage 1
0, the passive storage 40 and the upper glass substrate 120 for sealing the channel 20 from above are attached. A lower glass substrate 130 for sealing the first hole 116 and the second hole 118 penetrating the channel 20 from the lower surface of the semiconductor substrate 100 is installed. The above first and second
An insulating film made of an oxide film 106 and a nitride film 108 is formed below the semiconductor substrate 100 excluding the holes 116 and 118.

The first narrow channel region 24 and the second narrow channel region 25, which are formed at both ends of the channel 20 in the above-described structure, are formed when the micro relay is driven.
The pressure generated from the active storage 10 and the passive storage 40 serves to prevent the liquid metal 50 from leaving the range of the first channel region 22, the micro channel region 21 and the second channel region 23.

Similarly, in the microchannel region 21 formed between the first channel region 22 and the second channel region 23, the pressure generated from the active reservoir 10 and the passive reservoir 40 causes the liquid metal 50 to move into the first channel region. After being moved to the second channel area 22 and the second channel area 23, the channel area is prevented from leaving.

That is, the first having a wide width as described above
The microchannel region 21 having a width narrower than the channel region 22 and the second channel region 23, and the channel 20 constituted by the first narrow channel 24 and the second narrow channel 25 having a width narrower than the microchannel region 21 are After the liquid metal 50 has moved, it is formed so as to perform a latching action for preventing it from returning in the opposite direction and an action for enlarging the range of the voltage fluctuation width applied to the heaters 12, 42.

Further, the heater supports 14 and 44 use an oxide film with little heat transfer, and the heater supports 14 and 44 are arranged in a cantilever in consideration of the case where a voltage is applied to the heaters 12 and 42 to cause thermal expansion. It is manufactured in a cantilever form.

The first hole 116 is for injecting the liquid metal 50 into the first channel region 22 of the relay, and the second hole 118 is for injecting pressure due to pressure generation in the opposite direction when the liquid metal 50 is injected. It is formed to prevent the rise of.

At this time, the first hole 116 and the second hole 118 are formed so that the lower part is wide and the diameter is narrower toward the upper part in order to increase the volume ratio.

That is, the pressure generated from the active storage 10 and the passive storage 40 is the liquid metal 5 of the channel 20.
When applied to 0, in order to minimize the effect of pressure acting in opposition to the direction of pressurization of air pressure,
The volume ratio of 118 to the storages 10, 40 was 30: 1.

The side walls of the active store 10 and the passive store 40 are formed in an inclined structure in which the upper part is wide and the lower part is narrow. This is so that the air heated by the heaters 12 and 42 can be effectively transmitted to the channel 20.

The first signal electrodes 31 and 32 and the second signal electrodes 34 and 35 have a thickness T of a micrometer unit.
The heaters 12, 4 are made of iW, Au, Cu, Ni, etc.
The second material is made of platinum (Pt), polysilicon, nickel or the like.

In the heat-driven micro-relay having the above-mentioned structure, when power is not applied to the heater 42 of the passive storage 40 and power is applied to the heater 12 of the active storage 10, the air inside the active storage 10 is heated. This raises the internal pressure.

At this time, when this pressure becomes stronger than the force (pressure) of the above formula (1) which is the surface tension of the liquid metal 50 such as mercury or gallium used as the contact of the relay, When the liquid metal 50 moves to the right and contacts both ends of the second signal electrodes 34, 35, the second signal electrodes 34, 35 are turned on (ON).

On the contrary, the heater 12 of the active storage 10
When the power is not applied to the heater 42 of the passive storage 40 and the power is applied to the heater 42 of the passive storage 40, the internal pressure of the passive storage 40 rises and the liquid metal 50 in the second channel region 23 moves to the first channel region 22. As a result, the current flowing to one side through the second signal electrodes 34 and 35 is cut off, and the first signal electrodes 31 and 32 become conductive.

That is, in the above two operating states, the power source can be selectively applied to the heaters 12 and 42 of the active storage 10 and the passive storage 40, respectively, so that the first signal composed of two electrodes is provided. It is possible to turn on / off the current flowing through the power supply line composed of the electrodes 31 and 32 and the second signal electrodes 34 and 35.

The power applied to the heaters 12 and 42 of the active storage 10 and the passive storage 40 in order to turn on the power supply line on one side and turn off the power supply line on the other side by the above-described operation is predetermined. , The liquid metal 50 from the first channel region 10 to the second channel region 40.
Can be applied only for the time required to move to or vice versa.

FIG. 4 is a plan view showing a modified example of the latch type thermal drive relay element of the present invention.

The latch type thermally actuated micro-relay element according to the modification shown in FIG. 4 differs from the relay element shown in FIGS. 2 and 3 only in the narrow channel region, and the other components are the same.

That is, according to the modified example of the present invention, the first narrow channel region 24 and the second narrow channel region 25 in the previous embodiment are the first channel region from the active storage 10 and the passive storage 40, respectively. The first narrow channel region 28 and the second narrow channel region 29 extending to the second channel region 22 and the second narrow channel region 23 are replaced by one flow passage shape.

The manufacturing process of the latch type micro-relay element having the planar structure and the sectional structure described with reference to FIGS. 2 and 3 will be described below with reference to FIGS.

Referring to FIGS. 5 to 6, [100]
Alternatively, the semiconductor substrate 100 having a [110] crystal orientation
An insulating film that is patterned and used as an etching mask on the front and back surfaces of the photo-etching process.
Oxide films 102 and 106 having a thickness of Å and nitride films 104 and 108 having a thickness of 2000 Å are formed in the next row on the front and rear surfaces of the substrate.

Subsequently, the oxide film 102 and the nitride film 106 on the upper surface of the semiconductor substrate 100 are photolithographically etched.
The nitride film 104 and the oxide film 102 are removed so that a region for forming a wiring region of the micro relay is exposed on the upper surface, and an etching mask pattern for wiring region formation (not shown)
To form

Next, the exposed semiconductor substrate 100 is anisotropically wet-etched by using the above-mentioned etching mask pattern as an etching shield film, and as shown in FIG. Thus, a first wiring region 60a and a second wiring region 60b which are vertically extended are formed.

Subsequently, the remaining nitride film 104 and oxide film 1
02 is re-patterned by photo-etching to form an etching mask pattern (not shown) for the active storage region, the channel region and the passive storage region, and then the exposed portion of the semiconductor substrate 100 is anisotropically wet. A channel 2 that is etched to maintain a constant distance from each other as shown in FIG. 5 to form an active storage area 10a and a passive storage area 40a having a large area and at the same time connecting the two areas.
The 0s are formed by grooves that are integral with each other.

At this time, the channel 20 has a microchannel region 22a having a narrow width formed in the middle portion thereof. Between the active storage area 10a and the microchannel area 21, there are a first narrow channel area 24 and a first narrow channel area 24 having a width narrower than that of the microchannel area.
The channel region 22 is formed. A second channel region 23 and a second narrow channel 25 are formed between the micro channel region 21 and the passive storage region 40a.

Subsequently, the oxide film 102 and the nitride film 104 remaining on the semiconductor substrate 100 are removed by dry etching as in the following example, and then an etching mask pattern for electrode formation (not shown) is formed on the entire surface of the semiconductor substrate 100. ) Is formed, and the exposed portion of the semiconductor substrate 100 is dry-etched to have a first channel region 22 and a second channel formed at predetermined intervals as shown in FIGS. 5 and 6. First signal electrode regions 31a and 32a, which are separated from each other in the vertical direction of the region 23, respectively.
And second signal electrode regions 34a and 35a are defined.

At this time, the first signal electrode region 31 to be etched
a, 32a and the second signal electrode regions 34a, 35a are formed to have a shallower depth than the active and passive storage regions 10a, 40a and the channel region 20a. This is to ensure that the metal formed as the electrode is formed in the intermediate depth range of the channel 22.

Through the above-described etching process, as shown in FIG. 5, grooves having a certain shape are formed in the semiconductor substrate 100, which are spatially connected to each other.

Subsequently, as shown in FIGS. 7 and 8, the first wiring region 6 which is an exposed portion of the semiconductor substrate 100.
0a, 60b, the second wiring regions 70a, 70b, the active storage region 10a, the passive storage region 40a, and the channel region 20a are respectively formed with an oxide film 112.

At this time, the formation process of the oxide film 112 is not limited to the above-described formation method, and the exposed semiconductor substrate 1
00 can be thermally oxidized to form a thermal oxide film, or can be formed by an anodic oxidation method or the like.

The oxide film 112 is formed on the semiconductor substrate 100 by forming electrodes, heater metal and wiring metal that are formed subsequently.
It is formed for more electrical insulation.

Subsequently, a thick CVD oxide film 114 is formed in the active storage area 10a and the passive storage area 40a. This is because the heater formed in the subsequent process has a storage area 10a,
It is formed to be used as a support stand that floats from the floor surface of 40a.

Then, as shown in FIGS. 9 and 10,
Conductive platinum (P
t), after depositing polysilicon and nickel, patterning the same to form the cantilever-shaped heaters 12 and 42 in the active storage area 10a and the passive storage area 40a, and at the same time, to form the first wiring area 60a and the second wiring area 60a. The first wiring 60 and the second wiring 70 are formed in the wiring region 70a.

Thereafter, the lower oxide film 114 through which the heaters 12 and 42 lines pass in order to float the heaters 12 and 42 above the floor of the storage areas 10a and 40a is interrupted in the vertical direction and remains below the heaters. So that the oxide film 1
After the primary wet etching of 14 is performed, the secondary dry etching is performed to form the heater support bases 14 and 44. This is the heater 12, 42
This is because the active storage area 10a and the passive storage area 40b are floated from the bottom surface to increase the thermal efficiency when a voltage is applied.

At this time, when the oxide film 114 is completely etched by wet etching, the heater metal may come into contact with the floor surfaces of the storage areas 10a and 40a due to the surface tension of the etching solution. And dry etching was done in parallel.

Then, a metal such as TiW, Au, Cu and Ni which is a conductive metal is vapor-deposited on the entire surface of the semiconductor substrate 100 and is patterned to form the first channel region 22 and the second channel region 23. The first signal electrodes 31 and 32 and the second signal electrodes 34 and 35, which are isolated from each other and extend outward in the vertical direction, are simultaneously patterned.

Subsequently, an etching shield (not shown) is formed on the entire surface of the semiconductor substrate 100, and then the oxide film 106 and the nitride film 108 formed on the lower surface of the semiconductor substrate 100 are patterned to a predetermined size. The diameter of the channel region 20
Of the semiconductor substrate 100 after forming an etching mask pattern (remaining oxide film and nitride film) so as to expose regions corresponding vertically to the first narrow channel region 24 and the second narrow channel 25, respectively. The first hole 116 and the second hole 118 are etched by etching from the lower side to the upper side so as to penetrate a predetermined area of the first narrow channel 24 and the second narrow channel 25. Form.

At this time, the first hole 112 and the second hole 114 that are formed have a wide lower surface and become narrower toward the upper surface, so that the first narrow channel 24 and the second narrow channel 25 are formed.
Form the surface so that it is exposed with a narrow diameter. In order to facilitate the injection of the channel 20 of the conductive liquid metal, the inclined type is formed.

Then, as shown in FIG. 11, the etching mask pattern is removed, and the glass substrate 120 is anodically bonded to the upper surface of the semiconductor substrate 100 so that the lower surface of the semiconductor substrate 100 is on the upper side. The first hole 116 or the second hole 118 is turned over so that the side surface is turned upside down.
A liquid metal 50 such as mercury or gallium is injected as a conductive metal through.

Subsequently, the glass substrate 130 is adhered to the lower surface of the semiconductor substrate 100 with an ultraviolet adhesive to manufacture a micro relay element.

[0085]

Since the above-described latch-type thermally actuated micro-relay element of the present invention can be integrated with the bulk of a silicon wafer by utilizing micromachining technology, electroplating technology and semiconductor process technology,
It can be made smaller than existing relay elements.

Also, since the relay device of the present invention is compatible with the integrated circuit process, it has the advantage of forming a relay array.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a latch-type thermally actuated micro-relay element of the present invention.

FIG. 2 is a plan layout view of the latch-type thermally driven micro relay element of the present invention.

3 is a cross-sectional view of a latch-type thermally actuated micro-relay element schematically showing a cross section taken along the line AA of FIG.

FIG. 4 is a schematic plan view showing a modified example of the latch type thermally driven micro relay element of the present invention.

FIG. 5 is a plan view of a latch-type heat-driven micro relay element.

6 is a sectional view of the latch type micro relay element taken along the line AA in FIG.

FIG. 7 is a storage formation region that is an etched portion of a semiconductor substrate;
FIG. 3 is a plan view showing a state in which an oxide film is formed in a channel formation region, an electrode formation region and a wiring region.

8 is a cross-sectional view showing a cross section of the semiconductor substrate taken along the line AA of FIG.

FIG. 9 is a plan view schematically showing a state in which a heater, a heater support, and a signal electrode are formed in a region where a heat-driven micro relay element is formed and liquid metal is injected.

FIG. 10 is a cross-sectional view showing a storage state, first and second signal electrodes, and first and second holes formed on a semiconductor substrate.

FIG. 11 is a cross-sectional view showing a state in which glass substrates are attached to the upper surface and the lower surface of the latch-type heat-driven micro-relay element to complete the manufacture of the relay element.

[Explanation of symbols]

 10 Active Storage 20 Channel 21 Micro Channel Region 22 First Channel Region 23 Second Channel Region 24 First Narrow Channel Region 31, 32 First Signal Electrode 34, 35 Second Signal Electrode 60 First Wiring 70 Second Wiring 100 Semiconductor Substrate 102, 106 Oxide film 104, 108 Nitride film 112, 114 Oxide film 116, 118 First and second holes 120 Upper glass substrate 130 Lower glass substrate

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Jung Hyun Lee Korea, Daejeong, Yousungk, Yeung Dong, Hanwit Apartment 131-801 (72) Inventor Hyun Jung Yu South Korea, Daejeong, Yousungk, Ye Won Dong, Hanwit Apartment 130-1206

Claims (11)

[Claims] 1. An active storage container 10 having a predetermined volume inside a bulk of a semiconductor substrate 100, in which a heater 12 for heating air therein is installed, and an active storage container 10 separated from the active storage container 10 at a predetermined interval. A passive storage 40 having the same volume, in which a heater 42 is installed, and a moving path of the liquid metal 50, which is a contact metal, is extended to the space between the active storage 10 and the passive storage 40 described above. The channel 20 that plays a role, the first signal electrodes 31 and 32 that are spaced apart from each other and have one end inserted into the channel in a predetermined region of the channel 20 and extending to the outside; The second signal electrodes 34 and 35, which have the same shape as the second signal electrode 32 and are spaced at a constant interval.
And the first signal electrode 3 mounted inside the above channel.
1, 32 and the second signal electrodes 34, 35 serving as contact points of the liquid metal 50, and the upper and lower side surfaces of the semiconductor substrate 100 bonded to the upper and lower glass substrates 120, 130. Latch type thermal drive micro relay element. 2. The latch type thermally actuated micro-relay element according to claim 1, wherein the heaters 12 and 42 are formed in a cantilever shape. 3. The heater according to claim 2, wherein the heaters 12 and 42 are formed in a row on the floor surfaces of the active storage 10 and the passive storage 40, respectively, which are intermittent in the vertical direction in the traveling direction of the heater. Support bases 14, 4
A heat-actuated micro-relay element of the latch type, which is supported on 4 and is suspended from the floor. 4. The latch type thermally driven micro relay element according to claim 1, wherein the liquid metal 50 is mercury or gallium. 5. The first signal electrode 31, 32 and the second signal electrode 34, 3 according to claim 1.
Reference numeral 5 is a latch-type thermally actuated micro-relay element, which is one of TiW, Au, Cu and Ni. 6. The latch type thermally driven micro-relay element according to claim 1, wherein the heaters 12 and 42 are formed of platinum, polysilicon and nickel. 7. The channel 20 according to claim 1, wherein the channel 20 has a microchannel region 21 having a narrow channel width in an intermediate region thereof, and is wider than the microchannel region 21 at both ends of the microchannel region 21. First channel area 2 with width
2 and a second channel region 23, and a first narrow channel region 24 having a width narrower than that of the micro channel region 21 between the first and second channel regions 22 and 23 and the storages 10 and 40. A latch-type thermally actuated micro-relay element having a second narrow channel region 25. 8. The method according to claim 7, wherein the first and second narrow channels 24 and 25 have two narrow channels extending toward the active storage 10 and the passive storage 40, respectively. Latch type thermal drive micro relay element. 9. The semiconductor device according to claim 1, wherein the semiconductor substrate 100 becomes narrower from the lower side to the upper side, and the upper portion has the active storage 10 and the first signal electrodes 31, 3.
2 and a region of the channel 20 between the passive reservoir 40 and the second signal electrodes 34 and 35, respectively, and used as an injection passage for injecting the liquid metal 50. A latch-type microrelay element having the first and second holes 116 and 118 to be formed. 10. The latch type thermally driven micro device according to claim 9, wherein the volume costs of the first and second holes 116 and 118 and the active storage 10 and the passive storage 40 are 30: 1. . 11. The first wiring 60 and the second wiring 7 according to claim 1, which supply power to the heaters 12 and 14 at both ends of the active storage 10 and the passive storage 40.
A latch-type thermally actuated micro-relay element, wherein 0 is additionally formed.