JPH09148384A - Lead frame fixing method by wire bonder and fixing apparatus - Google Patents
Lead frame fixing method by wire bonder and fixing apparatusInfo
- Publication number
- JPH09148384A JPH09148384A JP7310211A JP31021195A JPH09148384A JP H09148384 A JPH09148384 A JP H09148384A JP 7310211 A JP7310211 A JP 7310211A JP 31021195 A JP31021195 A JP 31021195A JP H09148384 A JPH09148384 A JP H09148384A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- frame
- protrusion
- bonding
- wire bonder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7865—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造設備に
おけるワイヤボンダのリードフレームの固定方法及びそ
の固定装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for fixing a lead frame of a wire bonder in a semiconductor manufacturing facility.
【０００２】[0002]
【従来の技術】一般に従来のワイヤボンダのリードフレ
ームを固定する方法としては、図２に示すように、加熱
源及び基準面としてのヒートステージ４とフレーム押さ
え５でリードフレーム１をクランプする機構が採用され
ていた。ここで、フレーム押さえ５にはボンディングに
必要な開口部の周囲で、リードフレーム１を効果的に押
さえるための突起部５ａが設けられており、この突起部
５ａがリードフレーム１に均一に接することにより、リ
ードフレーム１の安定した固定を実現させ、信頼性の高
いボンディング品質を得ていた。また、上記突起部５ａ
の材料は金属及び耐熱性ゴムが一般的である。2. Description of the Related Art Generally, as a method of fixing a lead frame of a conventional wire bonder, as shown in FIG. 2, a mechanism for clamping the lead frame 1 with a heat stage 4 as a heating source and a reference surface and a frame retainer 5 is adopted. It had been. Here, the frame retainer 5 is provided with a protrusion 5a for effectively retaining the lead frame 1 around the opening required for bonding, and the protrusion 5a should be in uniform contact with the lead frame 1. As a result, stable fixing of the lead frame 1 was realized, and highly reliable bonding quality was obtained. In addition, the protrusion 5a
The material is generally metal and heat resistant rubber.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来のフレーム押さえ機構では、ボンディング時に発
生する振動を十分に遮断することは困難である。例え
ば、近年主流になっている超音波併用熱圧着方式ボンデ
ィングを例にとると、リードフレームがヒートステージ
とフレーム押さえで十分に固定されているように見える
状態でも、ボンディング時に使用される超音波が、同一
リードフレーム上で連結されている隣接したＩＣへ漏洩
するという事例がある。However, it is difficult for the above-described conventional frame pressing mechanism to sufficiently block the vibration generated during bonding. For example, in the case of ultrasonic thermocompression bonding, which has become the mainstream in recent years, the ultrasonic waves used during bonding can be applied even when the lead frame appears to be sufficiently fixed by the heat stage and the frame holder. , There is a case of leaking to adjacent ICs connected on the same lead frame.
【０００４】その結果、既にボンディングが完了したＩ
Ｃに注目すると、当該ＩＣ以降のＩＣをボンディングす
る際に、リードフレーム上に加えられる超音波が、既に
完了したＩＣへ漏洩・伝達し、リードフレームと配線材
料の接続部（一般的にボンディングポストと呼ぶ）での
共振を生ぜしめ、配線材料の変形、断線に至ることがあ
る。As a result, I which has already been bonded
Focusing on C, ultrasonic waves applied on the lead frame at the time of bonding the IC after the IC leaks and is transmitted to the already completed IC, and the connecting portion between the lead frame and the wiring material (generally, the bonding post). Called)), resulting in deformation of the wiring material or disconnection.
【０００５】以下、その現象を図２及び図３を参照しな
がら説明する。図２において、２ａはボンディング中の
ＩＣであり、２ｂは既にボンディングが完了したＩＣで
ある。配線材３ａはキャピラリ６を用いてボンディング
ポスト７ａにボンディングされるところである。この
時、リードフレーム（ボンディングポスト７ａ）１は、
ヒートステージ４とフレーム押さえ５で固定されている
ので、キャピラリ６に与えられる超音波振動はボンディ
ングポスト７ａのみに影響し、フレーム押さえ５の外側
の領域へは伝達しないことが望ましい。The phenomenon will be described below with reference to FIGS. 2 and 3. In FIG. 2, 2a is an IC being bonded, and 2b is an IC that has already been bonded. The wiring member 3a is to be bonded to the bonding post 7a using the capillary 6. At this time, the lead frame (bonding post 7a) 1 is
Since it is fixed by the heat stage 4 and the frame retainer 5, it is desirable that the ultrasonic vibration applied to the capillary 6 affects only the bonding post 7a and is not transmitted to the region outside the frame retainer 5.
【０００６】しかしながら、ワイヤボンダで使用される
超音波振動の振幅は、数１０ミクロンと極めて小さな振
幅であるため、ヒートステージ４とフレーム押さえ５の
間隔が僅かでもあれば、この時の超音波は漏洩する可能
性がある。その結果、この漏洩した振動は、既にボンデ
ィング完了したＩＣ２ｂのボンディングポスト７ｂに到
達することがあるが、このボンディングポスト７ｂの周
囲はフレーム押さえ等の固定機構が無いため、自由に振
動することは容易に理解できる。なお、３ｂは配線材で
ある。However, since the amplitude of the ultrasonic vibration used in the wire bonder is as small as several tens of microns, even if the distance between the heat stage 4 and the frame holder 5 is small, the ultrasonic wave at this time leaks. there's a possibility that. As a result, the leaked vibration may reach the bonding post 7b of the IC 2b that has already been bonded. However, since there is no fixing mechanism such as a frame presser around the bonding post 7b, it is easy to freely vibrate. Can understand. In addition, 3b is a wiring material.
【０００７】図３はこのような超音波振動の漏洩によっ
てボンディングポスト７ｂが振動し、これによって生じ
た配線材３ｂの変形例と断線例を示す。一般的に配線材
３ｂが振動によって切断される場合、箇所８で断線する
例が多いが、ここで示した断線箇所を限定するものでは
ない。これらの障害を回避するため、ヒートステージ４
とフレーム押さえ５の間隔のバラツキを一定にする様々
な調整機構の採用や精度管理（確認）がなされている
が、長期に渡って精度を確保することは極めて困難であ
る。FIG. 3 shows a modification and a disconnection example of the wiring member 3b caused by the bonding post 7b vibrating due to the leakage of the ultrasonic vibration. In general, when the wiring member 3b is cut by vibration, there are many examples of breaking the wire at the location 8, but the breaking location shown here is not limited. In order to avoid these obstacles, heat stage 4
Although various adjustment mechanisms and accuracy control (confirmation) have been made to make the interval of the frame presser 5 constant, it is extremely difficult to ensure accuracy over a long period of time.
【０００８】本発明は、上記問題点を除去し、ワイヤボ
ンディング中に発生した振動をワイヤボンディング中の
ＩＣの領域内で遮断し、既にワイヤボンディングしたＩ
Ｃへの振動によるダメージを極小にすることができるワ
イヤボンダのリードフレームの固定方法及びその固定装
置を提供することを目的とする。The present invention eliminates the above-mentioned problems, isolates the vibration generated during wire bonding in the area of the IC during wire bonding, and I
An object of the present invention is to provide a method of fixing a lead frame of a wire bonder and a fixing device therefor, which can minimize damage to C by vibration.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 （１）ワイヤボンダのリードフレームの固定方法におい
て、リードフレームのボンディングポストの外周部をフ
レーム押さえの突起部で押さえるとともに、前記突起部
の外周部を更に補助的な押さえ部で押さえ、前記リード
フレーム上の連結された他のＩＣへのワイヤボンディン
グ時の振動を抑制するようにしたものである。In order to achieve the above object, the present invention provides: (1) In a method of fixing a lead frame of a wire bonder, the outer peripheral portion of a bonding post of the lead frame is pressed by a protruding portion of a frame pressing member. The outer peripheral portion of the protrusion is further pressed by an auxiliary pressing portion to suppress vibration during wire bonding to another IC connected to the lead frame.
【００１０】したがって、ワイヤボンディング中に発生
した振動をワイヤボンディング中のＩＣの領域内で遮断
することができるので、既にワイヤボンディングしたＩ
Ｃへの振動によるダメージを極小にすることができる。 （２）ワイヤボンダのリードフレームの固定装置におい
て、リードフレームのボンディングポストの外周部に突
起部が位置するように形成されるフレーム押さえと、こ
のフレーム押さえに固定されるとともに、前記突起部の
外周部に位置するように形成される補助押さえ部とを設
けるようにしたものである。Therefore, the vibration generated during wire bonding can be blocked within the area of the IC during wire bonding, so that the wire bonding I
Vibration damage to C can be minimized. (2) In a device for fixing a lead frame of a wire bonder, a frame retainer formed such that a protrusion is located on an outer peripheral portion of a bonding post of the lead frame, and an outer peripheral portion of the protrusion that is fixed to the frame retainer. And an auxiliary pressing portion formed so as to be located at the position.
【００１１】したがって、簡単な構成でもって、ボンデ
ィング中に発生した振動をボンディング中のＩＣの領域
内で遮断することができるので、既にボンディングした
ＩＣへの振動によるダメージを極小にすることができ
る。 （３）上記（２）記載のワイヤボンダのリードフレーム
の固定装置において、前記補助押さえ部は耐熱性ゴムか
らなる。Therefore, with a simple structure, the vibration generated during the bonding can be blocked within the area of the IC being bonded, so that the damage to the already bonded IC due to the vibration can be minimized. (3) In the fixing device for the lead frame of the wire bonder described in (2) above, the auxiliary pressing portion is made of heat resistant rubber.
【００１２】したがって、上記（２）の効果に加えて、
高コストな機械加工でなく、標準化した成形型による低
コストな製作が可能となる。 （４）上記（２）記載のワイヤボンダのリードフレーム
の固定装置において、前記補助押さえ部はバネ状の押さ
え板からなる。したがって、上記（２）の効果に加え
て、押さえ板の成形は直線的な形状であるため、比較的
安価な機械加工でも、低コストで実施できる。Therefore, in addition to the effect of (2) above,
Rather than expensive machining, standardized molds can be manufactured at low cost. (4) In the fixing device for the lead frame of the wire bonder according to the above (2), the auxiliary pressing portion is a spring-shaped pressing plate. Therefore, in addition to the effect of (2) above, since the pressing plate is formed in a linear shape, it can be performed at a low cost even by relatively inexpensive machining.
【００１３】（５）上記（２）、（３）又は（４）記載
のワイヤボンダのリードフレームの固定装置において、
前記補助突起部に対応するヒートステージ面に耐熱性ゴ
ム受け部を配置するようにしたものである。したがっ
て、上記（２）の効果に加え、補助押さえ部を十分にリ
ードフレームに密着させることができ、振動を十分に遮
断することができる。また、ヒートステージの耐熱性ゴ
ム受け部は安価な成形品で製作できる。(5) In the fixing device for the lead frame of the wire bonder according to the above (2), (3) or (4),
The heat-resistant rubber receiving portion is arranged on the heat stage surface corresponding to the auxiliary protruding portion. Therefore, in addition to the effect of (2) above, the auxiliary pressing portion can be sufficiently brought into close contact with the lead frame, and the vibration can be sufficiently blocked. Further, the heat-resistant rubber receiving portion of the heat stage can be manufactured by an inexpensive molded product.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら詳細に説明する。図１は本発明の
第１実施例を示すワイヤボンダのリードフレーム固定装
置の構成図であり、図１（ａ）はその上面図、図１
（ｂ）はその断面図である。従来技術と同様に、ヒート
ステージ１４とフレーム押さえ１５の突起部１５ａでリ
ードフレーム１１を固定しているが、更に、この実施例
では、フレーム押さえの突起部１５ａの外周を取り囲む
ように第２の突起部（補助押さえ部）１６が配置されて
いる。この突起部１６の材質は、例えば、耐熱性ゴムの
ようにフレーム押さえよりも弾性が高く、且つ高温下で
も長期間に渡って安定で塑性変形しにくい材質を使用す
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a configuration diagram of a lead frame fixing device for a wire bonder showing a first embodiment of the present invention. FIG.
(B) is a sectional view thereof. As in the prior art, the lead frame 11 is fixed by the heat stage 14 and the protrusion 15a of the frame retainer 15. However, in this embodiment, the second frame is surrounded by the outer periphery of the protrusion 15a of the frame retainer. A protruding portion (auxiliary pressing portion) 16 is arranged. As the material of the protruding portion 16, for example, a material such as heat-resistant rubber that has higher elasticity than the frame retainer and is stable and resistant to plastic deformation for a long period of time even at high temperature is used.
【００１５】第２の突起部１６の固定方法は、溝の中に
埋め込んで固定しても良いし、接着剤等で固定しても構
わないが、フレーム押さえ１５が動作する前の状態で
は、第２の突起部１６とフレーム押さえの突起部１５ａ
との位置関係は、第２の突起部１６の方を若干高くし、
第２の突起部１６がリードフレームに密着できるように
する必要がある。The second projection 16 may be fixed by embedding it in a groove or by fixing it with an adhesive or the like, but in the state before the frame retainer 15 operates, Second projection 16 and frame pressing projection 15a
As for the positional relationship with, the second protrusion 16 is slightly higher,
It is necessary to allow the second protrusion 16 to be in close contact with the lead frame.
【００１６】以下、この装置の動作について説明する。
図１において、リードフレーム１１はヒートステージ１
４と第２の突起部１６でまず固定され、最後にフレーム
押さえの突起部１５ａでボンディングポスト周囲を固定
される。その結果、ボンディング中に生じた振動はフレ
ーム押さえの突起部１５ａでそのほとんどが遮断され、
更に、その外周に配置された第２の突起部１６は前述し
たように、弾性の高い材料を用いているので、十分にリ
ードフレームに密着して振動を完全に遮断することがで
きる。The operation of this device will be described below.
In FIG. 1, the lead frame 11 is a heat stage 1.
4 and the second protrusion 16 are first fixed, and finally the periphery of the bonding post is fixed by the frame pressing protrusion 15a. As a result, most of the vibration generated during bonding is blocked by the protrusion 15a of the frame retainer,
Further, as described above, the second protruding portion 16 arranged on the outer periphery of the second protruding portion 16 is made of a highly elastic material, so that it can be sufficiently adhered to the lead frame and the vibration can be completely blocked.
【００１７】上記のように、第１実施例によれば、ボン
ディング中に発生した振動を、そのボンディング中のＩ
Ｃ１２ａの領域内で遮断することができるので、既にボ
ンディングしたＩＣ１２ｂへの振動によるダメージが極
小になる。なお、１３ａ，１３ｂはボンディングワイ
ヤ、１１ａはタイバーである。ところで、フレーム押さ
え１５にはボンディングに必要な領域（空間）を確保す
るのに必要最小限の開口を設け、その周囲に突起部を設
けるのが一般的であるので、この開口寸法はリードフレ
ーム、チップのデザイン等に従って異なるため複数品種
製作することになる。As described above, according to the first embodiment, the vibration generated during the bonding is changed to I during the bonding.
Since it can be cut off within the region of C12a, damage to the already bonded IC 12b due to vibration is minimized. Note that 13a and 13b are bonding wires, and 11a is a tie bar. By the way, it is general that the frame presser 15 is provided with a minimum required opening for securing a region (space) necessary for bonding, and a protrusion is provided around the opening, so that the opening size is determined by the lead frame, Different products will be manufactured according to the chip design, etc.
【００１８】一方、第２の突起部は前記開口寸法に依存
しない任意の寸法でも構わない。すなわち、リードフレ
ーム内の任意のＩＣをボンディング中に他のＩＣへ振動
を漏洩させないことが目的であるから、ボンディング中
のＩＣの領域内にあって、ヒートステージと共にリード
フレームを固定できる配置であれば、第２の突起部の配
置は任意でよい。そのため、第２の突起部を例えばゴム
で製作する場合、高コストな機械加工でなく、標準化し
た成形型による低コストな製作が可能となる。On the other hand, the second protrusion may have any size independent of the opening size. That is, since the purpose is to prevent vibration from leaking to another IC during bonding of any IC in the lead frame, the lead frame may be fixed together with the heat stage within the area of the IC being bonded. For example, the arrangement of the second protrusion may be arbitrary. Therefore, when the second protrusion is made of rubber, for example, it is possible to perform low-cost production using a standardized molding die instead of high-cost machining.
【００１９】ただし、この第２の突起部の配置につい
て、最も効率的で振動の遮断効果の高い（漏洩させな
い）最適な配置は、図６に示すように一般にタイバー１
１ａと呼ばれる複数のリードを連結する帯状の領域上で
あることは、同一の押さえ幅で比較すると、実質的な押
さえ面積が最大であること、そのため経時劣化が最小に
なるなどの理由からで明白である。そこで、第２の突起
部の配置を適切に設定することで耐久性の向上が期待で
きる。However, with respect to the arrangement of the second protrusions, the most efficient and most effective arrangement for preventing vibrations (preventing leakage) is generally the tie bar 1 as shown in FIG.
It is clear that it is on a strip-shaped region called 1a that connects a plurality of leads because the substantial holding area is the largest when compared with the same holding width, and therefore deterioration over time is minimized. Is. Therefore, the durability can be expected to be improved by appropriately setting the arrangement of the second protrusions.
【００２０】次に、本発明の第２実施例について説明す
る。図４は本発明の第２実施例を示すワイヤボンダのリ
ードフレーム固定装置の構成図でり、図４（ａ）はその
上面図、図４（ｂ）はその断面図ある。従来技術と同様
に、ヒートステージ２４とフレーム押さえ２５の突起部
２５ａでリードフレーム２１を固定しているが、この実
施例では、ボンディング中のＩＣ２２ａと隣接ＩＣ２２
ｂの境界部に振動遮断用押さえ板（補助押さえ部）２６
が配置されている。この押さえ板２６の材質は、金属あ
るいは耐熱性ゴムのように弾性に富み、安定で塑性変形
しにくい材質を使用する。押さえ板２６はバネ様の加圧
機構を有し、適度な圧力でリードフレーム２１をヒート
ステージ２４に固定できるようにしている。Next, a second embodiment of the present invention will be described. FIG. 4 is a configuration diagram of a lead frame fixing device for a wire bonder showing a second embodiment of the present invention, FIG. 4 (a) is a top view thereof, and FIG. 4 (b) is a sectional view thereof. As in the prior art, the lead frame 21 is fixed by the heat stage 24 and the protruding portion 25a of the frame retainer 25. In this embodiment, the IC 22a being bonded and the adjacent IC 22 are bonded.
A vibration isolation presser plate (auxiliary presser part) 26 at the boundary of b
Is arranged. As the material of the pressing plate 26, a material that is rich in elasticity and is stable and resistant to plastic deformation, such as metal or heat resistant rubber, is used. The pressing plate 26 has a spring-like pressing mechanism so that the lead frame 21 can be fixed to the heat stage 24 with an appropriate pressure.
【００２１】以下、この装置の動作について説明する。
図４において、リードフレーム２１はヒートステージ２
４と押さえ板２６で固定される。この結果、ボンディン
グ中に生じた振動はフレーム押さえの突起部２５ａでそ
のほとんどが遮断され、さらに隣接ＩＣ２２ｂの境界に
配置された押さえ板２６がリードフレーム２１に密着し
て振動を完全に遮断する。２３ａ，２３ｂはボンディン
グワイヤである。The operation of this device will be described below.
In FIG. 4, the lead frame 21 is the heat stage 2
4 and the pressing plate 26. As a result, most of the vibration generated during the bonding is blocked by the frame pressing protrusion 25a, and the pressing plate 26 arranged at the boundary between the adjacent ICs 22b comes into close contact with the lead frame 21 to completely block the vibration. 23a and 23b are bonding wires.
【００２２】上記したように、第２実施例によれば、ボ
ンディング中に発生した振動を、ボンディング中のＩＣ
の領域と隣接ＩＣの中間で遮断するすることができるの
で、既にボンディングしたＩＣへの振動によるダメージ
が極小になる。また、押さえ板の成形は直線的な形状で
あるため、比較的安価な機械加工でも成形型を用いた耐
熱性ゴム成形でも可能であり、低コストに実施できるメ
リットがある。As described above, according to the second embodiment, the vibration generated during the bonding is transmitted to the IC during the bonding.
Since it is possible to cut off in the middle of the region of (1) and the adjacent IC, damage to the already bonded IC due to vibration is minimized. Further, since the pressing plate has a linear shape, it can be machined at a relatively low cost or can be molded with heat-resistant rubber using a molding die, which is advantageous in that it can be carried out at low cost.
【００２３】次に、本発明の第３実施例について説明す
る。図５は本発明の第３実施例を示すワイヤボンダのリ
ードフレーム固定装置の構成図であり、図５（ａ）はそ
の上面図、図５（ｂ）はその断面図ある。従来技術と同
様に、ヒートステージ３４とフレーム押さえ３５の突起
部３５ａでリードフレーム３１を固定しているが、この
実施例では、フレーム押さえ３５にはその突起部３５ａ
の外周を取り囲むように第３の突起部（補助押さえ部）
３６が、ヒートステージ３４にはこの突起部３６に対向
するように耐熱性ゴム受け部３７が配置されている。Next, a third embodiment of the present invention will be described. 5A and 5B are configuration diagrams of a lead frame fixing device for a wire bonder showing a third embodiment of the present invention, FIG. 5A is a top view thereof, and FIG. 5B is a sectional view thereof. As in the prior art, the lead frame 31 is fixed by the heat stage 34 and the protrusions 35a of the frame retainer 35. In this embodiment, the frame retainer 35 has its protrusions 35a.
Third protrusion (auxiliary pressing part) so as to surround the outer circumference of
On the heat stage 34, a heat resistant rubber receiving portion 37 is arranged so as to face the protruding portion 36.
【００２４】フレーム押さえ３５の突起部３５ａの材質
を金属に、これに対向する受け部３７を弾性に富むゴム
等に選択することにより、リードフレーム３１の固定を
確実に行うことができる。ヒートステージ３４の耐熱性
ゴム受け部３７の固定方法は第１実施例で示したよう
に、溝の中に埋め込んで固定しても良いし、接着剤等で
固定しても構わない。The lead frame 31 can be securely fixed by selecting the material of the projecting portion 35a of the frame retainer 35 as metal and the receiving portion 37 facing this as rubber having high elasticity. The heat-resistant rubber receiving portion 37 of the heat stage 34 may be fixed by embedding it in the groove as described in the first embodiment, or by fixing it with an adhesive or the like.
【００２５】また、フレーム押さえの第３の突起部３６
とフレーム押さえの突起部３５ａとの位置関係は、第３
の突起部３６の方を若干高めにするか、ヒートステージ
３４の耐熱性ゴム受け部３７をヒートステージ３４より
も高めにして、第３の突起部３６がリードフレーム３１
に密着できるようにする必要がある。以下、この装置の
動作について説明する。The third protrusion 36 of the frame holder is also provided.
The positional relationship between the frame and the protrusion 35a of the frame retainer is the third.
The protrusion 36 of the heat stage 34 is slightly raised, or the heat-resistant rubber receiving portion 37 of the heat stage 34 is raised higher than the heat stage 34, so that the third protrusion 36 becomes the lead frame 31.
Need to be able to stick to. Hereinafter, the operation of this device will be described.
【００２６】図５において、リードフレーム３１はヒー
トステージ３４の耐熱性ゴム受け部３７と第３の突起部
３６でまず固定され、最後に、フレーム押さえ３５の突
起部３５ａでボンディングポスト周囲を固定する。この
結果、ボンディング中に生じた振動は、フレーム押さえ
の突起部３５ａでそのほとんどが遮断され、更に、その
外周に配置された第３の突起部３６は前述したように、
弾性の高い材料を用いているので、十分にリードフレー
ム３１に密着して振動を完全に遮断する。なお、３２
ａ，３２ｂはＩＣ、３３ａ，３３ｂはボンディングワイ
ヤである。In FIG. 5, the lead frame 31 is first fixed by the heat-resistant rubber receiving portion 37 of the heat stage 34 and the third protrusion 36, and finally, the periphery of the bonding post is fixed by the protrusion 35a of the frame retainer 35. . As a result, most of the vibration generated during bonding is blocked by the frame pressing protrusion 35a, and the third protrusion 36 arranged on the outer periphery of the frame pressing portion 35a is
Since the material having high elasticity is used, the material is sufficiently adhered to the lead frame 31 to completely block the vibration. Note that 32
a and 32b are ICs, and 33a and 33b are bonding wires.
【００２７】上記したように、第３実施例によれば、ボ
ンディング中に発生した振動を、ボンディング中のＩＣ
の領域と隣接ＩＣの中間で遮断することができるので、
既にボンディングしたＩＣへの振動によるダメージが極
小になる。また、第１実施例と同様に第３の突起部は標
準化が可能なため、ヒートステージの耐熱性ゴム受け部
は安価な成形品で製作できるメリットがある。As described above, according to the third embodiment, the vibration generated during the bonding is transmitted to the IC during the bonding.
Since it is possible to cut off in the middle of the area of
The damage to the already bonded IC due to vibration is minimized. Also, since the third protrusion can be standardized as in the first embodiment, there is an advantage that the heat-resistant rubber receiving portion of the heat stage can be manufactured by an inexpensive molded product.
【００２８】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００２９】[0029]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項１記載の発明によれば、ボンディング中に
発生した振動をボンディング中のＩＣの領域内で遮断す
ることができるので、既にボンディングしたＩＣへの振
動によるダメージを極小にすることができる。As described above, according to the present invention, the following effects can be obtained. (1) According to the invention described in claim 1, since the vibration generated during the bonding can be blocked within the area of the IC being bonded, damage to the already bonded IC due to the vibration can be minimized. it can.
【００３０】（２）請求項２記載の発明によれば、簡単
な構成でもって、ボンディング中に発生した振動を、ボ
ンディング中のＩＣの領域内で遮断することができるの
で、既にボンディングしたＩＣへの振動によるダメージ
を極小にすることができる。 （３）請求項３記載の発明によれば、上記（２）の効果
に加えて、高コストな機械加工でなく、標準化した成形
型による低コストな製作が可能となる。(2) According to the second aspect of the present invention, the vibration generated during bonding can be shut off within the area of the IC being bonded with a simple structure. The damage caused by the vibration of can be minimized. (3) According to the invention as set forth in claim 3, in addition to the effect of (2), it is possible to perform low-cost production by a standardized molding die instead of high-cost machining.
【００３１】（４）請求項４記載の発明によれば、上記
（２）の効果に加えて、押さえ板の成形は直線的な形状
であるため、比較的安価な機械加工でも、低コストで実
施できる。 （５）請求項５記載の発明によれば、上記（２）の効果
に加え、補助押さえ部を十分にリードフレームに密着さ
せることができ、振動を十分に遮断することができる。
また、ヒートステージの耐熱性ゴム受け部は安価な成形
品で製作できる。(4) According to the invention described in claim 4, in addition to the effect of the above (2), since the press plate is formed in a linear shape, it can be manufactured at a relatively low cost and at a low cost. Can be implemented. (5) According to the invention of claim 5, in addition to the effect of (2) above, the auxiliary pressing portion can be sufficiently brought into close contact with the lead frame, and vibration can be sufficiently blocked.
Further, the heat-resistant rubber receiving portion of the heat stage can be manufactured by an inexpensive molded product.
【図１】本発明の第１実施例を示すワイヤボンダのリー
ドフレーム固定装置の構成図である。FIG. 1 is a configuration diagram of a lead frame fixing device of a wire bonder showing a first embodiment of the present invention.
【図２】従来のワイヤボンダのリードフレーム固定装置
の構成図である。FIG. 2 is a configuration diagram of a conventional lead frame fixing device for a wire bonder.
【図３】従来技術の問題点の説明図である。FIG. 3 is an explanatory diagram of a problem of the conventional technique.
【図４】本発明の第２実施例を示すワイヤボンダのリー
ドフレーム固定装置の構成図である。FIG. 4 is a configuration diagram of a lead frame fixing device for a wire bonder showing a second embodiment of the present invention.
【図５】本発明の第３実施例を示すワイヤボンダのリー
ドフレーム固定装置の構成図でFIG. 5 is a configuration diagram of a lead frame fixing device for a wire bonder showing a third embodiment of the present invention.
【図６】本発明のフレーム押さえの補助押さえ部による
押さえ位置を示すリードフレームの平面図である。FIG. 6 is a plan view of a lead frame showing a pressing position by an auxiliary pressing portion of the frame pressing device of the present invention.
【符号の説明】 １１，２１，３１ リードフレーム １１ａ タイバー １２ａ，２２ａ，３２ａ ボンディング中のＩＣ １２ｂ，２２ｂ，３２ｂ 隣接ＩＣ １３ａ，１３ｂ，２３ａ，２３ｂ，３３ａ，３３ｂ
ボンディングワイヤ １４，２４，３４ ヒートステージ １５，２５，３５ フレーム押さえ １５ａ，２５ａ，３５ａ 突起部 １６ 第２の突起部（補助押さえ部） ２６ 押さえ板（補助押さえ部） ３６ 第３の突起部（補助押さえ部） ３７ 耐熱性ゴム受け部[Explanation of reference numerals] 11,21,31 Lead frame 11a Tie bars 12a, 22a, 32a ICs 12b, 22b, 32b during bonding Adjacent ICs 13a, 13b, 23a, 23b, 33a, 33b
Bonding wire 14, 24, 34 Heat stage 15, 25, 35 Frame presser 15a, 25a, 35a Projection 16 Second projection (auxiliary presser) 26 Presser plate (auxiliary presser) 36 Third projection (auxiliary) Pressing part) 37 Heat resistant rubber receiving part
Claims (5)
法において、 リードフレームのボンディングポストの外周部をフレー
ム押さえの突起部で押さえるとともに、前記突起部の外
周部を更に補助的な押さえ部で押さえ、前記リードフレ
ーム上の連結された他のＩＣへのワイヤボンディング時
の振動を抑制することを特徴とするワイヤボンダのリー
ドフレームの固定方法。1. A method of fixing a lead frame of a wire bonder, wherein the outer peripheral portion of a bonding post of the lead frame is pressed by a protruding portion of a frame pressing member, and the outer peripheral portion of the protruding portion is further pressed by an auxiliary pressing portion. A method for fixing a lead frame of a wire bonder, which suppresses vibration during wire bonding to another IC connected to the frame.
置において、（ａ）リードフレームのボンディングポス
トの外周部に突起部が位置するように形成されるフレー
ム押さえと、（ｂ）該フレーム押さえに固定されるとと
もに、前記突起部の外周部に位置するように形成される
補助押さえ部とを具備するワイヤボンダのリードフレー
ムの固定装置。2. A lead frame fixing device for a wire bonder, comprising: (a) a frame holder formed so that a protrusion is located on an outer peripheral portion of a bonding post of the lead frame; and (b) fixed to the frame holder. A lead frame fixing device for a wire bonder, further comprising: an auxiliary pressing portion formed so as to be located on an outer peripheral portion of the protrusion.
レームの固定装置において、前記補助押さえ部は耐熱性
ゴムからなることを特徴とするワイヤボンダのリードフ
レームの固定装置。3. The wire bonder lead frame fixing device according to claim 2, wherein the auxiliary pressing portion is made of heat resistant rubber.
レームの固定装置において、前記補助押さえ部はバネ状
の押さえ板からなることを特徴とするワイヤボンダのリ
ードフレームの固定装置。4. The fixing device for a lead frame of a wire bonder according to claim 2, wherein the auxiliary pressing portion is a spring-shaped pressing plate.
のリードフレームの固定装置において、前記補助突起部
に対応するヒートステージ面に耐熱性ゴム受け部を配置
することを特徴とするワイヤボンダのリードフレームの
固定装置。5. The lead bonder for a wire bonder according to claim 2, 3 or 4, wherein a heat resistant rubber receiving portion is arranged on a heat stage surface corresponding to the auxiliary protrusion. Frame fixing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7310211A JPH09148384A (en) | 1995-11-29 | 1995-11-29 | Lead frame fixing method by wire bonder and fixing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7310211A JPH09148384A (en) | 1995-11-29 | 1995-11-29 | Lead frame fixing method by wire bonder and fixing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09148384A true JPH09148384A (en) | 1997-06-06 |
Family
ID=18002540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7310211A Withdrawn JPH09148384A (en) | 1995-11-29 | 1995-11-29 | Lead frame fixing method by wire bonder and fixing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09148384A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011009262A (en) * | 2009-06-23 | 2011-01-13 | Toshiba Mitsubishi-Electric Industrial System Corp | Pressurized ultrasonic vibration bonding method and device |
-
1995
- 1995-11-29 JP JP7310211A patent/JPH09148384A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011009262A (en) * | 2009-06-23 | 2011-01-13 | Toshiba Mitsubishi-Electric Industrial System Corp | Pressurized ultrasonic vibration bonding method and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08255862A (en) | Lead frame, resin sealed semiconductor device, manufacture thereof, and molding die | |
| KR100428271B1 (en) | Integrated circuit package and its manufacturing method | |
| EP0289102B1 (en) | Method and means for bonding of lead wires for an integrated circuit device | |
| JPH09148384A (en) | Lead frame fixing method by wire bonder and fixing apparatus | |
| JPH0469958A (en) | Semiconductor device | |
| JPH0621134A (en) | Semiconductor device and manufacture thereof | |
| JPH0758143A (en) | Wire bonding device | |
| JP2000036556A (en) | Semiconductor device and manufacture thereof | |
| JPH0212840A (en) | Manufacture of semiconductor device | |
| JPH1154684A (en) | Manufacture of semiconductor device | |
| JPH05275570A (en) | Semiconductor device | |
| JPH08181165A (en) | Semiconductor integrated circuit | |
| KR200292793Y1 (en) | Structure of fan-in TAB lead for micro-film for a semiconductor package | |
| JPH04267545A (en) | Plastic molded type semiconductor device | |
| JPS60119759A (en) | Semiconductor device | |
| KR0147156B1 (en) | Film-on-chip package and the manufacturing method thereof | |
| JPH0653264A (en) | Manufacture of semiconductor device | |
| JPH04213864A (en) | Resin sealed type semiconductor device | |
| JPH05152359A (en) | Potting device | |
| JPH04316340A (en) | Resin-sealed type semiconductor device | |
| KR20020049862A (en) | Window clamp of wire bonding apparatus | |
| JPH01257360A (en) | Lead frame for semiconductor device | |
| JPH02222551A (en) | Molding die for box type resin molding body and manufacture of semiconductor device using this die | |
| JPH06252320A (en) | Lead frame, bonding jig and bonding method | |
| JPH10107198A (en) | Ic sealing package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20030204 |