JPH09148321A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an insulating layer free from separation or cracking by depositing a fluorine-free silicon oxide film on a fluorine-containing silicon oxide film and then a spin-on-glass film thereon. SOLUTION: A first fluorine-containing oxide film 12 is deposited on a first interconnection layer 3. A silicon oxide film 13 is deposited on the oxide film 12, and an SOG film 14 is formed thereon to obtain a flat surface. Since the silicon oxide film 13 between the first silicon oxide film 12 and the SOG film 14 is free from fluorine, the coating material for the SOG film 14 does not make direct contact with the surface of the first oxide film 12 containing Si-F. In addition, the adhesion between the silicon oxide film 13 and the SOG film 14 is improved and heat shrinkage is relatively small. Therefore, it is possible to provide a reliable insulating layer including an SOG film free from separation or cracking.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a structure of an interlayer insulating film between wiring layers and a method of forming the same.

[0002]

2. Description of the Related Art In recent years, multi-layered wiring has been used along with high-density integration of LSIs. However, it is required to flatten the step due to the underlying wiring layer of the interlayer insulating film formed between the wiring layers and reduce the capacitance between the wiring layers. ing. FIG. 6 is a sectional view showing the structure of a conventional semiconductor device. In the figure, 1 is a semiconductor substrate made of, for example, silicon single crystal (hereinafter referred to as a substrate), 2
Is an insulating film formed on the substrate 1, 3 is a first wiring layer made of, for example, aluminum formed on the insulating film 2, 4
Is a silicon oxide film containing fluorine (hereinafter referred to as a fluorine-containing oxide film) formed on the first wiring layer 3, and 5 is a spin-on which is an inorganic coating insulating film formed on the fluorine-containing oxide film 4. Glass film (hereinafter referred to as SOG film), 6 is S
A silicon oxide film is formed on the OG film 5, and 7 is an interlayer insulating film composed of the fluorine-containing silicon oxide film 4, the SOG film 5 and the silicon oxide film 6. In addition, 8
Is a connection hole opened in the interlayer insulating film 7, and 9 is the interlayer insulating film 7.
It is a second wiring layer formed as an upper wiring layer made of aluminum, for example.

A conventional method of manufacturing a semiconductor device having the above structure will be described below. First, a metal layer of, for example, aluminum is formed on the insulating film 2 formed on the substrate 1 by about 0.6.
After forming to a film thickness of μm, patterning is performed to form the first wiring layer 3. Next, a fluorine-containing oxide film 4 is formed on the entire surface.
For example, by a plasma CVD method, TEOS (tetraethoxysilane) is used as a main raw material gas, and C ₂ F ₆ gas containing fluorine is added to form a film having a thickness of about 0.35 μm. continue,
On the entire surface of the fluorine-containing oxide film 4, for example, silanol (S
A coating solution 5a (not shown) in which i (OH) ₄ ) is dissolved in an organic solvent is applied to a thickness of about 0.15 μm by a spin coating method, and then baked to form an SOG film 5 to make the surface flat. Turn into.

Further, a silicon oxide film 6 is formed on the entire surface of the SOG film 5 by, for example, a plasma CVD method using TEOS as a main raw material gas to a film thickness of about 0.5 μm, and the fluorine-containing oxide film 4 and the SOG film 5 are formed. , And an inter-layer insulating film 7 consisting of three layers of a silicon oxide film 6. Next, using a known photolithography technique and etching technique, a connection hole 8 is formed at a predetermined position of the interlayer insulating film 7, and then a metal layer such as aluminum is formed on the entire surface so as to fill the connection hole 8. After the formation, the second wiring layer 9 is patterned.
To form

[0005]

The conventional semiconductor device is configured as described above, and by using the fluorine-containing oxide film 4 as the interlayer insulating film 7, an insulating film having a low relative dielectric constant is formed to form the wiring interlayer. The capacitance is reduced and the SOG film 5 is used for flattening. However, a silicon-fluorine bond (hereinafter referred to as Si-F) exists in the fluorine-containing oxide film 4, and the surface of the fluorine-containing oxide film 4 becomes water-repellent due to Si-F existing on the surface of the film. Adhesion to the SOG film 5 formed on the
In addition, the difference in thermal shrinkage between the fluorine-containing oxide film 4 and the SOG film 5 is large. Therefore, as shown in FIG.
The OG film 5 peels 10 from the fluorine-containing oxide film 4, or S
There was a problem that cracks 11 were generated in the OG film 5.

When the coating liquid 5a for the SOG film 5 is applied on the fluorine-containing oxide film 4, the fluorine-containing oxide film 4 and the coating liquid 5 are applied.
The reaction that occurs at the interface with a is shown in chemical formula 1 below.

[0007]

Embedded image

Thus, the Si on the surface of the fluorine-containing oxide film 4 is
-F causes the reaction shown in the above chemical formula 1 with H ₂ O in the coating liquid 5a, causing peeling 10 and cracks 11 in the SOG film.

The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a fluorine-containing oxide film and SO.
An object of the present invention is to obtain a highly reliable interlayer insulating film having a low dielectric constant and good planarization, which has a G film, and is free from peeling or cracking.

[0010]

In a semiconductor device according to a first aspect of the present invention, an interlayer insulating film includes a silicon oxide film containing fluorine and fluorine formed in contact with the silicon oxide film containing fluorine. This is a laminated structure having a silicon oxide film containing no fluorine and a spin-on-glass film formed in contact with the silicon oxide film containing no fluorine.

A method of manufacturing a semiconductor device according to a second aspect of the present invention comprises a first step of forming a wiring layer on a semiconductor substrate and then depositing a silicon oxide film containing fluorine on the entire surface.
A second step of depositing a fluorine-free silicon oxide film on the entire surface of the fluorine-containing silicon oxide film, and a spin-on-glass film by applying a silicon compound solution and heat treatment on the entire surface of the fluorine-free silicon oxide film. And a fourth step of forming an upper wiring layer after that.

In the method for manufacturing a semiconductor device according to the third aspect of the present invention, the silicon oxide film containing fluorine and the silicon oxide film containing no fluorine are continuously formed in the same reaction chamber.

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention comprises a first step of forming a wiring layer on a semiconductor substrate and then depositing a silicon oxide film containing fluorine on the entire surface.
A second step of performing a wet etching process using fluorine on the surface of the silicon oxide film containing fluorine, a third step of subsequently forming a spin-on-glass film by applying a silicon compound solution and heat treatment on the entire surface, and then an upper layer And a fourth step of forming a wiring layer.

A method of manufacturing a semiconductor device according to a fifth aspect of the present invention comprises a first step of forming a wiring layer on a semiconductor substrate and then depositing a silicon oxide film containing fluorine on the entire surface.
A second step of performing a plasma treatment using Ar, O ₂ or N _{2 on} the surface of the silicon oxide film containing fluorine, and then a spin-on-glass film is formed on the entire surface by applying a silicon compound solution and heat treatment. And a fourth step of forming an upper wiring layer after that.

A semiconductor device according to claim 6 of the present invention is
The interlayer insulating film has a laminated structure in which a spin-on-glass film is formed on a silicon oxide film containing fluorine, and the silicon oxide film containing fluorine is a silicon oxide film on the surface of which fluorine is removed from the surface layer part of the film. Is formed, and in addition, a slope is formed at the step corner portion.

A method of manufacturing a semiconductor device according to a seventh aspect of the present invention comprises a first step of forming a wiring layer on a semiconductor substrate and then depositing a silicon oxide film containing fluorine on the entire surface.
The second step of performing sputter etching using Ar on the surface of the silicon oxide film containing fluorine, followed by the third step of forming a spin-on-glass film by coating and heat treatment of a silicon compound solution on the entire surface, and then an upper layer And a fourth step of forming a wiring layer.

A semiconductor device according to claim 8 of the present invention is
The interlayer insulating film is a silicon oxide film containing fluorine, a spin-on-glass film formed on the silicon oxide film containing fluorine via the silicon oxide film not containing fluorine, and a silicon film formed on the spin-on-glass film. It is composed of an oxide film.

A semiconductor device according to claim 9 of the present invention is
The silicon oxide film formed on the spin-on-glass film is
It is composed of a silicon oxide film containing no fluorine formed in contact with the spin-on-glass film and a silicon oxide film containing fluorine formed in contact with the silicon oxide film containing no fluorine.

In the method of manufacturing a semiconductor device according to a tenth aspect of the present invention, after the third step of forming the spin-on-glass film, the surface of the spin-on-glass film is subjected to a plasma treatment using N ₂ , and subsequently, After depositing a silicon oxide film containing fluorine on the entire surface, a fourth step of forming an upper wiring layer is performed.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. Embodiment 1 of the present invention will be described below with reference to the drawings. Note that the description of the same parts as those of the conventional technique will be appropriately omitted. FIG. 1 is a sectional view showing a structure of a semiconductor device according to a first embodiment of the present invention. In the figure, 1 to 3, 8 and 9 are the same as conventional ones, 12 is a first fluorine-containing oxide film formed on the first wiring layer 3,
Reference numeral 13 is a fluorine-free silicon oxide film formed on the surface of the first fluorine-containing oxide film 12, 14 is an SOG film formed on the silicon oxide film 13, and 15 is a second SOG film formed on the SOG film 14. Fluorine-containing oxide film, 16 is the first fluorine-containing oxide film 12, silicon oxide film 13, SOG film 1
4 and the second fluorine-containing oxide film 15 are interlayer insulating films.

A method of manufacturing the semiconductor device configured as described above will be described below with reference to FIG. First, a metal layer of, for example, aluminum is formed to a thickness of about 0.6 μm on the insulating film 2 formed on the substrate 1, and then patterned to form the first wiring layer 3. Next, the first fluorine-containing oxide film 12 is formed on the entire surface by, for example, the plasma CVD method.
Temperature 400 ° C, pressure 5.0 Torr, C ₂ F ₆ flow rate 400
SCCM, TEOS flow rate 900 SCCM, O ₂ flow rate 90
0 SCCM, high frequency side frequency 13.56 MHz, output 0.76 W / cm ² , low frequency side frequency 420 KHz,
A film having a thickness of about 0.3 μm is formed under the condition of an output of 0.76 W / cm ² (FIG. 2A).

Next, a silicon oxide film 13 is formed on the entire surface of the first fluorine-containing oxide film 12, for example, by a plasma CVD method at a temperature of 400 ° C., a pressure of 5.0 Torr, a TEOS flow rate of 900 SCCM, an O ₂ flow rate of 900 SCCM, and a high frequency side. Frequency 13.56 MHz, output 0.76 W / cm ² , low frequency side frequency 420 KHz, output 0.76 W / cm ^2.
Under the above conditions, a film thickness of about 0.05 μm is formed (see FIG. 2).
(B)). Next, a coating liquid 14a (not shown) as a silicon compound solution in which silanol is dissolved in an organic solvent is applied to the entire surface of the silicon oxide film 13 by spin coating to a thickness of about 0.15 μm, and N ₂ By firing in an atmosphere at a temperature of 400 ° C. for 30 minutes, the SOG film 14 is formed and the surface is flattened (FIG. 2C).

Next, a second fluorine-containing oxide film 15 is formed on the entire surface of the SOG film 14 by, for example, plasma CVD method under the same conditions as when the first fluorine-containing oxide film 12 is formed to about 0.5 μ.
Then, an interlayer insulating film 16 composed of the first fluorine-containing oxide film 12, the silicon oxide film 13, the SOG film 14 and the second fluorine-containing oxide film 15 is formed to a film thickness of m. After that, the connection hole 8 is formed in the same manner as the conventional one, and then the second wiring layer 9 is formed (see FIG. 1).

In this embodiment, by forming the fluorine-free silicon oxide film 13 between the first fluorine-containing oxide film 12 and the SOG film 14, the coating solution 14a for the SOG film 14 is changed to Si-- There is no direct contact with the surface of the first fluorine-containing oxide film 12 where F is present. In addition, since the silicon oxide film 13 and the SOG film 14 have good adhesion and the difference in thermal shrinkage is relatively small, the SOG film 14 does not peel off or crack like the conventional one, and the interlayer insulation does not occur. The reliability of the insulating film 16 is improved. Further, such a highly reliable interlayer insulating film 16 can be easily obtained.

In the manufacturing method of the first embodiment, the first fluorine-containing oxide film 12 and the silicon oxide film 13 formed thereon may be continuously formed in the same reaction chamber of the CVD apparatus. it can. The first fluorine-containing oxide film 12 is formed at a temperature of 4 by a plasma CVD method, for example.
00 ° C, pressure 5.0 Torr, C ₂ F ₆ flow rate 400 SCC
M, TEOS flow rate 900SCCM, O ₂ flow rate 900SC
CM, high-frequency side frequency 13.56MHz, output 0.7
6W / cm ² , low-frequency side frequency 420KHz, output 0.76W / cm ² for about 50 seconds, then C ₂ F ₆ flow rate was changed to 0SCCM, all other conditions were the same conditions. Deposit 13 continuously for 5 seconds. In this way, the first fluorine-containing oxide film 12 and the silicon oxide film 13 are
By successively forming and in the same reaction chamber, the process is simplified, and the highly reliable interlayer insulating film 16 having the above-described effects can be obtained more easily.

Further, the fluorine-containing oxide films 12 and 15 and the silicon oxide film 13 are not limited to the plasma CVD method, but may be formed by several CVD method or atmospheric pressure CVD method, and the same effect can be obtained.

Embodiment 2. Next, a second embodiment of the present invention will be described. FIG. 3 is a cross-sectional view showing the method of manufacturing a semiconductor device according to the second embodiment. First, similarly to the first embodiment, after forming the first wiring layer 3 on the insulating film 2 formed on the substrate 1, the first fluorine-containing oxide film 12a is formed into a film of about 0.35 μm. Formed to a thickness (Fig. 3
(A)). Next, the substrate 1 is subjected to a wet etching process using, for example, 1:10 buffered hydrofluoric acid (hereinafter referred to as BHF) to etch the surface of the first fluorine-containing oxide film 12a by several nm. As a result, the fluorine contained in the surface layer of the first fluorine-containing oxide film 12a is removed, and the thin silicon oxide film layer 13a as a silicon oxide film containing no fluorine is formed (FIG. 3B). Next, as in the first embodiment, the silicon oxide film layer 13
After the SOG film 14 is formed on a (FIG. 3C) and the second fluorine-containing oxide film 15 is further formed thereon, the connection hole 8 and the second wiring layer 9 are sequentially formed (FIG. 3C). Three
(D)).

In this embodiment, a wet etching process with BHF is performed after the first fluorine-containing oxide film 12a is formed. At this time, the reaction occurring in the surface layer of the first fluorine-containing oxide film 12a in BHF is shown in the following chemical formula 2.

[0029]

Embedded image

In this way, the first fluorine-containing oxide film 12a is formed.
The surface layer of the Si-F undergoes a reaction shown in H ₂ O and Formula 2 in BHF, Si-F is replaced with a stable Si-OH, HF formed by the film surface is removed during BHF.
By the way, the reaction shown in the chemical formula 2 is the same as the reaction shown in the chemical formula 1 when the coating liquid 5a of the SOG film 5 is applied onto the fluorine-containing oxide film 4 in the conventional semiconductor device. That is, in this embodiment, the chemical formula 1,
Since the reaction shown in FIG.
When the coating liquid 14a of No. 4 is applied, it is possible to prevent reactions (chemical formulas 1 and 2) that cause peeling or cracks of the SOG film 14 from occurring. In this way, the adhesion between the SOG film 14 and the underlying silicon oxide film layer 13a from which fluorine has been removed is good, and the SOG film 14 does not peel off or crack and a highly reliable interlayer film is obtained. The insulating film 16 can be easily obtained.

In the second embodiment, B contained in the surface layer of the first fluorine-containing oxide film 12a is removed by removing B.
Although the wet etching process using HF was performed, Ar, N ₂ , or O ₂ was formed on the surface of the first fluorine-containing oxide film 12a.
The plasma treatment may be performed using any of the above gases, and the reaction at that time is shown in the following chemical formulas 3 to 5.

[0032]

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Embedded image

Embedded image

In this way, the first fluorine-containing oxide film 12a is formed.
Si-F on the surface layer is decomposed, the Si bond is terminated, and fluorine is removed by gasification and separation. In this case as well, the same effect as the case of performing the wet etching process by BHF is exhibited.

Embodiment 3 Next, a third embodiment of the invention will be described. FIG. 4 is a sectional view showing the method for manufacturing the semiconductor device according to the third embodiment. First, as in the first embodiment, after forming the first wiring layer 3 on the insulating film 2 formed on the substrate 1, the first fluorine-containing oxide film 12b is formed to a film thickness of about 0.37 μm. To form (Fig. 4
(A)). Next, the substrate 1 is sputter-etched with Ar ions to a pressure of 30 mTorr and an Ar flow rate of 100.
First etching with SCCM and output of 500W
20 nm thick is removed from the surface of the fluorine-containing oxide film 12b,
The fluorine contained in the surface layer of the first fluorine-containing oxide film 12b exposed thereunder is removed to form a thin silicon oxide film layer 13b as a fluorine-free silicon oxide film, and an inclination 17 is formed at the step corner portion. (Fig. 4
(B)). Next, similarly to the first embodiment, the SOG film 14 is formed on the silicon oxide film layer 13b (see FIG. 4).
(C)), and the second fluorine-containing oxide film 15 is further formed thereon.
After forming, the connection hole 8 and the second wiring layer 9 are sequentially formed (FIG. 4D).

In this embodiment, the surface of the first fluorine-containing oxide film 12b is sputter-etched with Ar ions. As a result, the contained fluorine in the surface layer of the first fluorine-containing oxide film 12b exposed thereunder is removed by the reaction of the chemical formula 3 shown in the second embodiment, and the adhesion with the SOG film 14 formed in the subsequent step is Is good, S
The OG film 14 is not peeled off or cracked. Further, since the slope 17 is formed at the step corner portion by the sputter etching using Ar ions, the coating liquid 14a of the SOG film 14 easily wraps around the step even if the aspect ratio of the first wiring layer 3 pattern is large. Surface flattening characteristics are improved. Further, since the removal of the contained fluorine in the surface layer of the first fluorine-containing oxide film 12b and the formation of the slope 17 at the step corner portion can be simultaneously performed by the sputter etching using Ar ions, the interlayer insulating film 16 having the above-described effect can be easily formed. You can

Embodiment 4 FIG. Next, a fourth embodiment of the invention will be described. FIG. 5 is a sectional view showing the structure of the semiconductor device according to the fourth embodiment. 1-3 in the figure
Reference numerals 8, 9 and 12 to 16 are the same as those in the first embodiment, and reference numeral 18 does not contain fluorine formed by the plasma CVD method between the SOG film 14 and the second fluorine-containing oxide film 15 thereon. It is a silicon oxide film. In this embodiment, the silicon oxide film 18 containing no fluorine is formed not only in the lower layer of the SOG film 14 but also in the upper layer thereof, and the adhesion with the second fluorine-containing oxide film 15 thereon is improved, so that the heat shrinkage occurs. The difference in rates is also reduced. Therefore, the reliability of the interlayer insulating film 16 is further improved.

In this case, the silicon oxide film 18 and the second fluorine-containing oxide film 15 on the SOG film 14 are the same as the first fluorine-containing oxide film 12 and the lower layer of the SOG film 14 shown in the first embodiment. Like the silicon oxide film 13,
It can be formed continuously in the same reaction chamber.

Embodiment 5 Next, a fifth embodiment of the invention will be described. First, after forming up to the SOG film 14 in the same manner as in the first embodiment, the surface of the SOG film 14 is subsequently subjected to plasma treatment using N ₂ gas, and then the second fluorine-containing oxide film 15 is formed. . Like this
By subjecting the surface of the SOG film 14 to plasma treatment using N ₂ gas, nitrogen is contained in the surface layer of the SOG film 14, and S
The function of i-N prevents the permeation of water from the lower layer.
Therefore, it is possible to prevent Si—F in the second fluorine-containing oxide film 15 formed on the SOG film 14 from reacting with moisture permeated from the lower layer at the interface with the underlying SOG film 14 to have an adverse effect. 14 and the second fluorine-containing oxide film 15 thereover are improved in adhesiveness, and the reliability of the interlayer insulating film 16 is further improved as in the case of the above-described fourth embodiment. The film 16 can be easily formed.

It should be noted that in the above-mentioned fourth and fifth embodiments, the SO
Although the first embodiment is applied to the structure of the lower layer of the G film 14, the same effect can be obtained by applying the second or third embodiment.

[0040]

As described above, according to the present invention, the interlayer insulating film between the wiring layers includes the silicon oxide film containing fluorine and the SOG film formed on the silicon oxide film containing no fluorine. It is an interlayer insulating film having a low dielectric constant and excellent flattening characteristics because of the laminated structure having
It is possible to obtain a highly reliable interlayer insulating film, which has good adhesion between the G film and the base and does not cause peeling or cracks in the SOG film.

Further, according to the present invention, after the silicon oxide film containing fluorine is deposited, the silicon oxide film containing no fluorine is deposited thereon, and the SOG film is formed thereon by coating the silicon compound solution and heat treatment. Since the interlayer insulating film is formed between the wiring layers, the adhesion between the SOG film and the base is improved, and a highly reliable interlayer insulating film that can prevent peeling or cracks from occurring in the SOG film can be easily formed. it can.

Further, according to the present invention, a silicon oxide film containing fluorine and a silicon oxide film containing no fluorine are provided.
Since the layers are continuously formed in the same reaction chamber, the interlayer insulating film having the above effect can be formed more easily.

Further, according to the present invention, after depositing a silicon oxide film containing fluorine, a wet etching process using hydrofluoric acid is performed, and then an SOG film is formed to form an interlayer insulating film between wiring layers. , The fluorine in the surface layer of the silicon oxide film containing fluorine is removed, the adhesion with the upper SOG film is improved, and a highly reliable interlayer insulating film that can prevent peeling or cracks from occurring in the SOG film is easy. Can be formed into

Further, according to the present invention, after depositing a silicon oxide film containing fluorine, plasma treatment using any of Ar, O _{2 and} N ₂ is performed, and then an SOG film is formed to form a wiring layer between wiring layers. Since the interlayer insulating film is formed, the fluorine in the surface layer of the silicon oxide film containing fluorine is removed, the adhesion with the upper SOG film is improved, and peeling or cracking of the SOG film can be prevented. A high interlayer insulating film can be easily formed.

Further, according to the present invention, in the silicon oxide film containing fluorine, the fluorine in the surface layer portion of the film is removed and the silicon oxide film is formed on the surface, and further, the slope is formed at the step corner portion. It is possible to obtain a highly reliable and high-performance interlayer insulating film which has good adhesion to the SOG film, can prevent the SOG film from being peeled or cracked, and has improved planarization characteristics.

Further, according to the present invention, after depositing a silicon oxide film containing fluorine, sputter etching using Ar is performed, and then an SOG film is formed to form an interlayer insulating film between wiring layers. It is possible to easily form a highly reliable and high-performance interlayer insulating film as described above.

Further, according to the present invention, the interlayer insulating film between the wiring layers is formed by the fluorine-containing silicon oxide film and the SO film formed thereon via the fluorine-free silicon oxide film.
Since it is formed of the G film and the silicon oxide film thereon, it has a low dielectric constant, good flattening characteristics, good adhesion between the SOG film and the base, and a highly reliable and high-performance interlayer insulating film. Is obtained.

Further, according to the present invention, since the silicon oxide film containing fluorine is formed on the SOG film via the silicon oxide film containing no fluorine, the adhesion between the SOG film and the upper layer is improved and the reliability is further improved. A high interlayer insulating film can be obtained.

Further, according to the present invention, after the SOG film is formed, the plasma treatment using N ₂ is performed, and the silicon oxide film containing fluorine is subsequently formed, so that the adhesion between the SOG film and the upper layer is also improved. In addition, a highly reliable interlayer insulating film can be easily formed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a sectional view illustrating a method of manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is a sectional view illustrating a method of manufacturing a semiconductor device according to a third embodiment of the present invention;

FIG. 5 is a sectional view showing a structure of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing the structure of a conventional semiconductor device.

FIG. 7 is a cross-sectional view illustrating a problem of a conventional semiconductor device.

[Explanation of symbols]

1 Semiconductor Substrate, 3 First Wiring Layer, 9 Second Wiring Layer as Upper Wiring Layer, 12, 12a, 12b First Fluorine-Containing Silicon Oxide Film, 13 Fluorine-Free Silicon Oxide Film, 13a, 13b Silicon oxide film layer as fluorine-free silicon oxide film, 14 spin-on-glass film (SOG film), 14a coating liquid as silicon compound solution, 15 second silicon oxide film containing fluorine, 16 interlayer insulating film, 17 gradient .

Claims (10)

[Claims] 1. A semiconductor device having a wiring layer on a semiconductor substrate and an upper wiring layer formed on the wiring layer via an interlayer insulating film, wherein the interlayer insulating film is a silicon oxide film containing fluorine. And a fluorine-free silicon oxide film formed in contact with the fluorine-containing silicon oxide film, and a spin-on-glass film formed in contact with the fluorine-free silicon oxide film. A semiconductor device characterized by the above. 2. A first step of depositing a fluorine-containing silicon oxide film on the entire surface after forming a wiring layer on a semiconductor substrate, and a fluorine-free silicon oxide film on the entire fluorine-containing silicon oxide film. A second step of depositing a film, a third step of forming a spin-on-glass film on the entire surface of the fluorine-free silicon oxide film by applying a silicon compound solution and heat treatment, and then forming an upper wiring layer. 4. A method of manufacturing a semiconductor device, comprising: 3. The method of manufacturing a semiconductor device according to claim 2, wherein the silicon oxide film containing fluorine and the silicon oxide film not containing fluorine are continuously formed in the same reaction chamber. 4. A first step of depositing a silicon oxide film containing fluorine on the entire surface after forming a wiring layer on a semiconductor substrate, and a wet etching treatment using fluorine on the surface of the silicon oxide film containing fluorine. It is characterized by including a second step of applying, a third step of forming a spin-on-glass film on the entire surface by applying a silicon compound solution and heat treatment, and a fourth step of forming an upper wiring layer thereafter. Manufacturing method of semiconductor device. 5. A first step of depositing a silicon oxide film containing fluorine on the entire surface after forming a wiring layer on a semiconductor substrate, and Ar, O on the surface of the silicon oxide film containing fluorine.
₂ or a second for performing a plasma treatment with either N ₂
Of the semiconductor device, followed by a third step of forming a spin-on-glass film on the entire surface by applying a silicon compound solution and heat treatment, and then a fourth step of forming an upper wiring layer. Production method. 6. A semiconductor device having a wiring layer on a semiconductor substrate and an upper wiring layer formed on the wiring layer via an interlayer insulating film, wherein the interlayer insulating film is a silicon oxide film containing fluorine. The spin-on-glass film has a laminated structure formed on the silicon oxide film containing fluorine, and the fluorine in the surface layer of the film is removed to form a silicon oxide film on the surface. A semiconductor device characterized by being formed. 7. A first step of depositing a silicon oxide film containing fluorine on the entire surface after forming a wiring layer on a semiconductor substrate, and a sputter etching using Ar on the surface of the silicon oxide film containing fluorine. The method is characterized by including a second step to be performed, a third step of forming a spin-on-glass film by applying a silicon compound solution and heat treatment on the entire surface, and a fourth step of forming an upper wiring layer after that. A method of manufacturing a semiconductor device according to claim 6. 8. An interlayer insulating film, a fluorine-containing silicon oxide film, a spin-on-glass film formed on the fluorine-containing silicon oxide film via a fluorine-free silicon oxide film, and a spin-on-glass film on the spin-on-glass film. 2. A silicon oxide film formed on the substrate.
13. The semiconductor device according to claim 1. 9. The silicon oxide film formed on the spin-on-glass film is in contact with the fluorine-free silicon oxide film formed on the spin-on-glass film and on the fluorine-free silicon oxide film. 9. The semiconductor device according to claim 8, comprising the formed silicon oxide film containing fluorine. 10. After the third step of forming a spin-on-glass film, a plasma treatment using N ₂ is applied to the surface of the spin-on-glass film, and subsequently a silicon oxide film containing fluorine is deposited on the entire surface, 8. The method for manufacturing a semiconductor device according to claim 2, wherein a fourth step of forming an upper wiring layer is performed.