JPH09138915A - Electrode film and magnetoresistance effect head using that - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an electrode film having low resistivity, excellent chemical resistance and corrosion resistance, high hardness and excellent wear resistance by forming a molybdenum film comprising crystal grains of a specified size having a body-centered cubic structure as the electrode film. SOLUTION: This magnetoresistance effect head consists of a substrate 1, insulating film 2, magnetoresistance(MR) sensor 3, vertical bias films 4A, 4B, and electrode films 5A, 5B successively formed. The electrode films 5A, 5B consist of molybdenum films comprising crystal grains having a body-centered cubic structure and >150√ size in the perpendicular direction to the (1, 1, 0) plane. Moreover, the electrode films are preferably subjected to heat treatment at >200 deg.C for >=1 hour.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head for reading information from an electrode film and a magnetic recording medium, and more particularly, to reading information using an electrode film having a small specific resistance and a magnetoresistive effect. The present invention relates to a magnetoresistive head.

[0002]

2. Description of the Related Art Conventionally, gold is often used as an electrode film provided in a magnetoresistive head or the like. Gold has a very small specific resistance of 2 to 3 micro-ohm centimeters and is suitable as an electrode film, but it has compatibility with other films and has a weak adhesive force depending on the film in contact with gold. There is. For this reason, when gold is used as the electrode film of the magnetoresistive head, its adhesion becomes a problem, and gold peels off during manufacturing.

In order to solve the problem, a method of providing a tantalum layer having a thickness of several hundred angstroms on a gold base as an adhesion reinforcing layer has been generally used. However, tantalum as a thin film formed by a sputtering method or the like is generally β-tantalum having a tetragonal structure, and its specific resistance is as large as about 200 μOhm / cm (for example, Applied Physics Letters, 7, 51-52, 1965 (Appl. Phys. L
7, pp. 51-52, 1965)].

The specific resistance of tantalum can be reduced to about 60 micro-ohm centimeters by forming tantalum nitride by a reactive sputtering method using a mixed gas of argon and nitrogen. Of DI Eye Triple E, 5th
2, 1450-1462, 1964 (Proc. IEEE, Vol.
52, p. 1450-1462, 1964)]. However, the formation method is difficult and it is extremely difficult to form stably.

On the other hand, the specific resistance can be reduced by adding molybdenum to tantalum to form an alloy, but the limit is at most 40 micro-ohm-cm.

In addition, Japanese Patent Application Laid-Open No. Sho 56-116642 discloses a method in which molybdenum is used for a bonding pad in order to prevent corrosion of an aluminum bonding pad used for a wiring layer of a semiconductor device and to enhance reliability. A magnetoresistive read head using molybdenum as an electrode material is disclosed in
No. 215.

[0007]

By the way, since gold as a material is very soft, the wear resistance of a magnetoresistive head having a structure exposed on an air bearing surface (ABS) becomes a problem. For molybdenum,
The specific resistance as a bulk is as small as about 5 micro ohm · cm and is considered to be suitable as an electrode film, but it is generally known that the specific resistance is increased by making it into a thin film. Further, molybdenum generally has poor chemical resistance and corrosion resistance, but there is no known example in which molybdenum has been improved and applied as an electrode film.

In Japanese Patent Application Laid-Open No. 01-17215, the drawback of molybdenum having poor corrosion resistance is avoided by using a magnetoresistive read head having a structure in which the molybdenum electrode is not exposed to the ABS. In addition, sufficient consideration has not been given to corrosion resistance, and this structure causes the distance from the magnetoresistive effect element to the electrode to be increased, causing heat to be generated due to an increase in the resistance, resulting in thermal noise. Cheap.

[0009]

An object of the present invention is to provide an electrode film which solves the above-mentioned disadvantages of the prior art, has low specific resistance in a thin film, is excellent in chemical resistance and corrosion resistance, is hard in hardness, and is excellent in wear resistance. Further, it is an object of the present invention to provide a highly reliable magnetoresistive head having low resistance, heat generation, and noise by using it as an electrode film.

[0010]

In order to achieve the above object, in the invention according to claim 1, an electrode film which is formed in a thin film with a predetermined area on a predetermined member such as a magnetoresistive head and functions as an electrode portion. 2), the electrode film is formed of a molybdenum film having a body-centered cubic structure and having a grain size of 150 angstroms or more in the direction perpendicular to the (1,1,0) plane. .

In the invention according to claim 1, as a result of making a plurality of samples corresponding to this and performing an experiment, the specific resistance decreases as the size D _{1.1.0. Of} the crystal grains in the vertical direction increases, It has been clarified that the larger the grain size D _{1.1.0. In} the vertical direction is, the more the specific resistance can be reduced.

That is, the crystal grain size in the vertical direction D _1.1.0.
When set to about 150 angstroms, the specific resistance is 2
It can be reduced to about 5 micro-ohm-centimeters, and if the crystal grain size D _1.1.0. Is set to about 160 angstroms, the specific resistance can be reduced to about 20 micro-ohm-centimeters. It was found that the grain size D _{1.1.0. In} the vertical direction was 170 angstroms or more and the specific resistance was settled at a constant value of 16 micro ohm cm. That is, it has been clarified that the specific resistance can be reduced to 16 micro-ohm centimeters by controlling the grain size D _{1.1.0. In} the vertical direction to 170 angstroms or more.

According to a second aspect of the invention, in an electrode film which is formed in a thin film with a predetermined area on a predetermined member such as a magnetoresistive head and functions as an electrode portion, the electrode film has a body-centered cubic structure. Of the molybdenum film whose crystal grain size in the direction perpendicular to the (1,1,0) plane is 150 angstroms or more, and the electrode film is
The heat treatment is performed at a temperature of 0 [° C.] or higher for 1 hour or longer.

According to the second aspect of the present invention, the same function as that of the above-mentioned first aspect of the invention is exerted, and the specific resistance when heat-treated for a predetermined time increases the film forming power density and the argon gas pressure. It turned out that it decreases by making it small.

According to a third aspect of the present invention, a magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion in a single domain state, and the magnetic field In a magnetoresistive effect head comprising an electrode film electrically connected to a layer of a resistance effect sensor section, the above-mentioned electrode film has a body-centered cubic structure and is formed on its (1,1,0) plane. A method is adopted in which a molybdenum film having a vertical crystal grain size of 150 angstroms or more is used.

Even in this case, with respect to the electrode film, it is possible to obtain the same operational effect as that of the electrode film according to the invention described in claim 1.

According to a fourth aspect of the present invention, a magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion into a single domain state, and the magnetic field In a magnetoresistive effect head comprising an electrode film electrically connected to a layer of a resistance effect sensor part, the electrode film described above has a body-centered cubic structure and is formed on its (1,1,0) plane. The crystal grain size in the vertical direction is a molybdenum film having a size of 150 angstroms or more, and the thickness of this electrode film is set to a thickness of 100 angstroms or more and 10000 angstroms or less.

Even in this case, with respect to the electrode film, the same effect as that of the electrode film according to the above-mentioned invention can be obtained.

According to a fifth aspect of the present invention, a magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion into a single magnetic domain state, and the magnetic field A first electrically connected to the layer of the resistive effect sensor and exposed at the air bearing surface
And a second electrode film laminated on the first electrode film in a state of being electrically connected thereto and disposed at a position distant from the air bearing surface. Then, the first electrode film described above has a body-centered cubic structure and has a crystal grain size of 1 in the direction perpendicular to its (1,1,0) plane.
Consists of a molybdenum film of 50 Å or more,
The method is adopted.

In this way as well, with respect to the electrode film, it is possible to obtain the same function and effect as the electrode film according to the invention described in claim 1 above, and it is possible to increase the durability of the electrode film as a whole. .

In a sixth aspect of the present invention, a magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion in a single magnetic domain state, and the magnetic field A first electrically connected to the layer of the resistive effect sensor and exposed at the air bearing surface
And a second electrode film laminated on the first electrode film in a state of being electrically connected thereto and disposed at a position distant from the air bearing surface. Then, the first electrode film described above has a body-centered cubic structure and has a crystal grain size of 1 in the direction perpendicular to its (1,1,0) plane.
The first electrode film is made of a molybdenum film of 50 Å or more, and is heat-treated at a temperature of 200 ° C. or more for 1 hour or more.

Even in this case, it is possible to obtain the same function and effect as the invention described in claim 5, and to increase the durability of the electrode film as a whole. It is possible to increase the size of crystal grains of the electrode film.

According to a seventh aspect of the invention, a magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion in a single domain state, and the magnetic field A first electrically connected to the layer of the resistive effect sensor and exposed at the air bearing surface
And a second electrode film laminated on the first electrode film in a state of being electrically connected thereto and arranged at a position distant from the air bearing surface.
Also, the first electrode film described above has a body-centered cubic structure and the size of crystal grains in the direction perpendicular to its (1,1,0) plane is 1
It is composed of a molybdenum film of 50 Å or more.
Then, the first electrode film is heated at a temperature of 200 ° C. or more for 1 hour.
The heat treatment is performed for more than an hour, and the thickness of the first electrode film is set to a thickness of 100 Å to 1000 Å.

Even in this case, it is possible to obtain the same function and effect as the invention described in claim 5, and further, it is possible to increase the durability of the electrode film as a whole.

According to the eighth aspect of the invention, gold is used as the material of the above-mentioned second electrode film layer.

Even in this case, it is possible to obtain the same function and effect as the invention described in claim 5, and further, the electrode film having a two-layer structure of gold as a material and the electrode film having a strong adhesive force. As a result, a magnetoresistive head having a smaller resistance value can be obtained.

In a ninth aspect of the present invention, the thickness of the second electrode film is set to 1000 angstroms or more and 100 or more.
The configuration is such that it is set to 00 angstroms or less.

Even in this case, it is possible to obtain the same effect as that of the invention described in claim 5 and to obtain the magnetoresistive head having a small resistance value.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS. First, in FIG. 1, the magnetoresistive head has a structure in which an insulating film 2, a magnetoresistive (MR) sensor unit 3, vertical bias films 4A and 4B, and electrode films 5A and 5B are sequentially laminated on a substrate 1. Has become.

As shown in FIG. 1A, both ends of the MR sensor unit 3 are tapered (inclined surface), and further the longitudinal bias films 4A and 4B and the electrode films 5A and 5B are formed. It is formed so as to cover the tapered end of the MR sensor unit 3. Moreover, FIG.
As shown in (b), a rectangular MR is formed.
Electrode films 5A and 5B are provided at both ends of the sensor section 3, and are cut at an air bearing surface (ABS surface) X.

As the substrate, Al ₂ O ₃ --TiC type ceramic is used. The thickness of the insulating film 2 is 1000
The MR sensor unit 3 is made of Al ₂ O _{3 of} Å, and the MR sensor part 3 is a 300 Å thick amorphous alloy of cobalt, zirconium and molybdenum as a soft magnetic film, and a tantalum of 100 Å thick as a non-magnetic spacer film. It consists of a three-layer film in which nickel-iron alloy of 200 angstroms thickness is sequentially laminated as a film,
The vertical bias films 4A and 4B are made of a 300 Å-thick cobalt-chromium-platinum alloy, and are formed by sequentially laminating them by sputtering.

Next, the manufacturing process of the magnetoresistive head will be described in detail with reference to FIGS.

First, as shown in FIGS. 2 (a) and 2 (b), the insulating film 2 and the MR sensor portion 3 are sequentially formed on the substrate 1 by a sputtering method. Here, FIG. 2A shows a state of film formation, and FIG. 2B shows a plan view thereof. afterwards,
As shown in FIGS. 3A and 3B, the image reversal negative type photoresist 6 is patterned into a stencil shape under appropriate conditions. Here, the stencil formed from the image reversal negative type photoresist 6 shown in FIG. 3A is not limited to the one shown in FIG. FIG. 2 (b),
In FIG. 3B, the symbol X indicates a position on the ABS.

Next, after the MR sensor portion is tapered by using the ion milling method, the vertical bias films 4A and 4A are formed.
B is laminated. Further, as the electrode films 5A and 5B, a film forming power density of 2.7 [W / cm ² ] and a pressure of 0.13 [Pa] are used.
In an argon gas atmosphere, molybdenum is deposited to a thickness of 2,000 Å, and the photoresist 6 is removed using an organic solvent such as acetone, as shown in FIGS. 4A and 4B. Make structure. The symbol X indicates a position on the ABS.

Subsequently, as shown in FIGS. 5 (a) and 5 (b),
The positive photoresist 7 is exposed and developed under appropriate conditions to form a pattern. The symbol X indicates a position on the ABS. Thereafter, the electrode films 5A, 5A in a region not masked by the positive photoresist 7 are formed by ion milling.
B and the longitudinal bias films 4A and 4B are removed, the positive photoresist 7 is removed using an organic solvent such as acetone, and then the heat treatment furnace is evacuated to 7 × 10 ⁻⁵ [Pa].
Heat treatment at a temperature of 00 ° C. for 1.2 hours;
By cutting at the ABS plane X indicated by, a magnetoresistive head as shown in FIG. 1 is obtained.

Here, in the conventional example, since a soft metal such as gold is used for the electrode film exposed on the ABS surface X, burrs due to gold are often generated at the time of cutting on the ABS surface X. there were. However, by forming the electrode film with hard molybdenum, generation of burrs could be prevented. Further, in the manufacturing process, no corrosion of the electrode film or the like occurred, and the corrosion resistance was good.

Next, various characteristics (properties) of the low resistivity electrode film of the present invention will be described in detail based on specific examples.

First, as the characteristic evaluation samples, seven samples were formed by depositing molybdenum having a thickness of 500 Å on a glass substrate by a sputtering method. FIG. 6 shows the gas pressure and the film forming power density of the argon gas used. In this case, each sample has 7 points (A, B, C, D, E,
F, G) were measured, and then 200 ° C.
, The specific resistance was measured after heat treatment for 1 hour, 2 hours, 3 hours and 25 hours. The result is shown in FIG.

From FIGS. 6 to 7, it was found that the resistivity was decreased by increasing the film forming power density and decreasing the argon gas pressure. 200 [° C],
By applying heat treatment for 1 hour, the specific resistance decreases,
It was also found that it did not change even after heat treatment for a long time and was stable.

Further, when X-ray diffraction was carried out on these samples by the Debye-Scherrer method using the diffractometer method, it was confirmed that they all showed a body-centered cubic structure. Further, using Scherrer's formula, (1,
The size D _{1,1,0. Of} the crystal grain in the direction perpendicular to the (1,0) plane was calculated. FIG. 8 shows the calculation results.

As is apparent from FIG. 8, it was found that the size D _{1.1.0. Of} the crystal grains in the vertical direction was increased by the heat treatment.

FIG. 9 is a diagram showing the relationship between the crystal grain size D _{1.1.0. In} the vertical direction and the specific resistance based on FIGS. 7 to 8.

Referring to FIG. 9, the specific resistance decreases as the vertical crystal grain size D _1.1.0. Increases, and the vertical crystal grain size D _1.1.0. Is 170 angstroms _. From the above, it can be seen that the specific resistance has settled at a constant value of 16 micro-ohm-centimeter. That is, by controlling the vertical grain size D _1.1.0. To 170 angstroms or more, the specific resistance _becomes 1
It has been found that it can be reduced to 6 micro ohm centimeters.

In this case, as is apparent from FIG. 9, if the grain size D _{1.1.0. In} the vertical direction is set to about 150 angstroms, the specific resistance can be reduced to about 25 micro ohm · cm. At the same time, it was revealed that the specific resistance can be reduced to about 20 micro ohm · cm by setting the size D _{1.1.0. Of} the same crystal grain to about 160 Å.

Next, the samples A, C, E, and G before heat treatment were immersed in an etching solution containing iodine, potassium iodide, and water at a weight ratio of "1: 2: 2000". At that time, the film thickness resistance value with respect to the immersion time was measured. FIG. 10 shows the measurement results.

According to the measurement result of FIG. 10, the samples E,
Sample A, sample C, and sample G showed a small decrease in film thickness in the order of sample A, indicating good resistance. For this reason, FIG.
In comparison with the results, it was found that the smaller the specific resistance and the larger the crystal grain size D _{1.1.0. In} the vertical direction, the better the resistance to the etching solution.

Further, for the samples A, C, E and G (see FIG. 6) before the heat treatment, the phosphate (NanH
When immersed in a developer containing _3- nPO ₄ ) as a component,
The film thickness with respect to the immersion time was measured. Figure 1 shows the measurement results.
It is shown in FIG.

According to the measurement results of FIG. 11, the sample C and the sample G show no change in the film thickness after immersion for 10 minutes, but the film thickness of the sample A is reduced by about 100 angstroms. The result obtained is that the film thickness of Sample E is reduced by about 230 Å. That is, FIG.
Similarly to the result of No. 0, it was found that the smaller the specific resistance and the larger the crystal grain size D _{1.1.0. In} the vertical direction, the better the resistance to the developer described above.

In the molybdenum film, when the sputtering method is used as a method for further reducing the specific resistance and increasing the size D _{1.1.0. Of} the crystal grains in the vertical direction,
It was clarified experimentally that it was effective to increase the film forming power density or to perform the film formation at a low gas pressure. Subsequent to the above-described samples A to G, a sample (sample H) in which a gold film having a thickness of 1500 angstroms was formed on a glass substrate by a sputtering method was prepared as an evaluation sample. When the Vickers hardness of the sample was specified, the sample H was about 160, whereas the sample G showed a value of about 860, which is about 5 times or more,
Sample G was found to be harder.

Then, the resistance of the magnetoresistive head (see FIG. 1) manufactured by using the electrode film when the size D _{1.1.0. Of} the crystal grains in the vertical direction is set to 150 angstrom was measured. However, a small resistance value of around 25 ohms was constantly obtained, and heat generation was suppressed to a low level. As for the reproduction characteristics, a good reproduction waveform with little noise due to heat was obtained. Furthermore, when a CSS test for inspecting the abrasion resistance of the head due to flying and landing was performed by rotating and stopping the magnetic recording medium 100,000 times, there was no abrasion of the electrode film on the ABS surface and sufficient abrasion resistance was obtained. Was confirmed.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to FIGS. FIG.
2, the magnetoresistive effect head comprises a substrate 1, an insulating film 2, an MR sensor unit 3, longitudinal bias films 4A and 4B,
First electrode films 10A and 10B, second electrode film 11A
And 11B are sequentially laminated. Further, this magnetoresistive head is similar to that of the MR sensor unit 3 shown in FIG.
The left and right ends in 2 (a) are tapered so as to form an inclined surface, and the vertical bias films 4A and 4A described above are further formed.
B, first electrode films 10A and 10B, second electrode film 1
1A and 11B are formed so as to cover the tapered end portion of the MR sensor unit 3.

Further, as shown in FIG. 12B in plan view, the first electrode films 10A and 10B are arranged at both ends of the rectangular shaped MR sensor portion 3, and further, The second electrode films 11A and 11B are the MR sensor unit 3
Are arranged at a fixed distance from both ends of the ABS and ABS shown by a broken line X, and A is shown by a broken line X.
The structure is cut at the BS surface.

As the substrate, Al ₂ O ₃ --TiC type ceramic is used. The insulating film 2 is made of Al ₂ O ₃ and has a thickness of about 800 Å. The MR sensor unit 3 is made of a cobalt-zirconium-molybdenum amorphous alloy, and has a thickness of about 300 Å as a soft magnetic film. The non-magnetic spacer film is made of tantalum and has a thickness of about 1
It is set to 00 angstroms.

The magnetoresistive film is a three-layer film in which nickel-iron alloys are sequentially laminated, and the thickness is set to about 200 angstroms. The vertical bias films 4A and 4B are made of a cobalt-chromium-platinum alloy,
The thickness is set to about 300 angstroms. These layers are formed by sequentially laminating films by a sputtering method.

Next, the manufacturing process of the magnetoresistive head will be described in detail with reference to FIGS.

First, as shown in FIG.
An insulating film 2, an MR sensor part 3, and gold 8 (film thickness 2400 Å) are sequentially laminated by sputtering, and
A micron-thick positive photoresist 9 is patterned under appropriate conditions. Thereafter, using an etching solution having a concentration of iodine, potassium iodide and water mixed at a ratio of “1: 2: 200”, etching and patterning are performed using gold as a raw material as shown in FIG. A stencil shaft was formed.

Then, both ends of the MR sensor portion 3 are tapered (tilted) by using an ion milling method, and then the vertical bias films 4A and 4B are laminated. Further, as the first electrode films 10A and 10B, a film forming power density of 2.4 is used.
Molybdenum is deposited to a thickness of 500 Å in an argon gas atmosphere of [W / cm ² ] and a pressure of 0.11 [Pa], and the positive photoresist 9 is removed using an organic solvent such as acetone. Then, the gold forming the stencil shaft portion is removed by using an etching solution having a concentration of iodine, potassium iodide and water mixed at a ratio of "1: 2: 2000" by using an etching solution shown in FIG.
The structure shown in FIG.

Next, as shown in FIG. 16, the positive photoresist 12 is exposed and developed under appropriate conditions to form a pattern. Thereafter, the first electrode films 10A and 10B and the vertical bias films 4A and 4B in the regions not masked by the positive photoresist 12 are removed by an ion milling method. Removed using solvent.

Next, after masking with a positive type photoresist patterned by exposing and developing under appropriate conditions, second electrode films 11A and 11B made of gold and having a thickness of 1500 angstrom are sputtered. 12 was used to form a laminated film, and the masked positive photoresist was removed using an organic solvent such as acetone to obtain the shape shown in FIG.

Finally, by heat-treating in a heat treatment furnace evacuated to 7 × 10 ^-5 [Pa] at a temperature of 220 [° C.] for 1.5 hours and cutting at the ABS plane indicated by the broken line X,
A magnetoresistive head as shown in FIG. 12 was manufactured. Here, similarly to the case of the first embodiment described above, generation of burrs due to gold at the time of cutting on the ABS surface, which has occurred in the conventional example, is prevented by forming the first electrode film with hard molybdenum. I was able to. In the manufacturing process,
No corrosion of the first electrode film occurred, and the corrosion resistance was good.

Then, when the resistance of the manufactured magnetoresistive head was measured, it was possible to constantly obtain a small resistance value of about 25 ohms in a stable manner and to generate heat, as in the case of the embodiment of FIG. 1 described above. Was also kept small. As for the reproduction characteristics, a good reproduction waveform with little noise due to heat was obtained. Further, when the CSS test was performed 100,000 times, there was no abrasion of the electrode film on the ABS, and sufficient abrasion resistance was confirmed. That is, in the magnetoresistive head of the present invention, similar results can be obtained if the electrode film satisfies the following conditions.

The electrode film is made of a molybdenum film having a body-centered cubic structure, and the crystal grains in the direction perpendicular to the (1,1,0) plane of the body-centered cubic structure may have a size of 150 angstroms or more. At that time, the electrode film may be heat-treated at a temperature of 200 ° C. or higher for 1 hour or longer.

[0063]

Since the present invention is constructed and functions as described above, according to this, an electrode film having a small specific resistance, excellent chemical resistance and corrosion resistance, hard hardness and excellent abrasion resistance is obtained. By using it as the electrode film of the magnetoresistive head, the resistance value, heat generation, noise, etc. are small and the reliability is high. Further, even if the electrode film is exposed on the ABS surface, the corrosion resistance and the abrasion resistance can be improved. In this respect, it is possible to provide a magnetoresistive head having a sufficiently high reliability, and by using an electrode film having a two-layer structure of gold as a material and the above-mentioned electrode film having a strong adhesive force, the resistance value can be further improved. It is possible to provide an unprecedented excellent electrode film capable of providing a small magnetoresistive effect head and a magnetoresistive effect head using the same.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention, and FIG.
FIG. 1A is a configuration diagram when viewed from an air bearing surface (ABS surface), and FIG. 1B is a configuration diagram when the substrate is viewed from above.

FIG. 2 is a view showing a part of a manufacturing procedure of the magnetoresistive effect head disclosed in FIG. 1; FIG. 2 (a) shows an insulating film and an MR film on a substrate;
FIG. 2B is a configuration diagram (laminated state) when viewed from an assumed surface of the ABS after the sensor members are sequentially formed, and FIG. 2B is a diagram when FIG. 2A is viewed from above the substrate. FIG.

FIG. 3 is a view showing a part of a manufacturing procedure of the magnetoresistive head disclosed in FIG. 1, and is a view after a process shown in FIG.
FIG. 3B is a configuration diagram showing a state where an image reversal negative type photoresist is patterned into a stencil shape as viewed from an ABS surface, and FIG. 3B is a diagram illustrating FIG. 3A viewed from above a substrate. It is a block diagram showing a case.

FIG. 4 is a view showing a part of a manufacturing procedure of the magnetoresistive effect head shown in FIG. 1, after the step of FIG. 3, and FIG.
FIG. 4B is a configuration diagram showing a state in which the longitudinal bias film and the electrode film are laminated after processing the MR sensor portion, as viewed from the ABS surface, and FIG. 4B is a diagram showing FIG. FIG. 4 is a configuration diagram showing a case in which

5 is a view showing a part of a manufacturing procedure of the magnetoresistive effect head shown in FIG. 1, and is an ABS surface showing a state in which a positive type photoresist is exposed and developed under appropriate conditions and patterned after FIG. 4; FIG. 5B is a configuration diagram showing a case where FIG. 5A is viewed from above with respect to the substrate.

FIG. 6 is a table showing conditions for forming seven experimental samples of the magnetoresistive head disclosed in FIG. 1;

FIG. 7 is a table showing a change in specific resistance due to heat treatment of seven experimental samples shown in FIG. 6;

8 is a table showing changes in crystal grain size due to heat treatment of seven experimental samples shown in FIG.

FIG. 9 is a diagram showing the relationship between the crystal grain size and the specific resistance based on the data obtained in FIGS. 7 and 8;

10 is a table showing the results of a resistance test on an etching solution for a part of the experimental sample in FIG. 6;

FIG. 11 is a chart showing the results of a resistance test on a part of the experimental samples in FIG. 6 with respect to a developer.

FIG. 12 is a diagram showing a second embodiment of the present invention.
FIG. 12A is a configuration diagram viewed from the air bearing surface (ABS surface), and FIG. 12B is a configuration diagram when the substrate is viewed from above.

FIG. 13 is a view showing a part of a manufacturing procedure of the magnetoresistive head disclosed in FIG. 12, and FIG. 13A shows a state after an insulating film, an MR sensor member, and gold are sequentially formed on a substrate; AB
FIG. 13B is a configuration diagram when viewed from the surface assuming the S surface (laminated state), and FIG. 13B is a configuration diagram when FIG. 13A is viewed from above the substrate.

FIG. 14 is a view showing a part of a manufacturing procedure of the magnetoresistive head disclosed in FIG. 12, after the step of FIG. 13, and
4A shows a state in which a stencil shaft portion is formed by etching and patterning a gold film and viewed from a surface assuming an ABS surface, and FIG. 14B is a diagram showing FIG. 14A as a substrate. FIG. 3 is a configuration diagram showing a case when viewed from above.

FIG. 15 is a view showing a part of the manufacturing procedure of the magnetoresistive head disclosed in FIG. 12, after the step of FIG. 14, and
FIG. 5A is a configuration view of a state in which a longitudinal bias film and an electrode film are laminated after processing the MR sensor portion and viewed from a surface assuming an ABS surface, and FIG. 15B is a diagram in which FIG. FIG. 3 is a configuration diagram showing a case when viewed from above.

16 is a view showing a part of the manufacturing procedure of the magnetoresistive head disclosed in FIG. 12 and is a view after the step of FIG.
6 (a) is to expose a positive photoresist under appropriate conditions.
FIG. 16 (b) is a configuration diagram showing a case where FIG. 16 (a) is viewed from above with respect to the substrate in a state where the substrate is developed and patterned and an ABS surface is assumed.

FIG. 17 is a view showing a part of a manufacturing procedure of the magnetoresistive head disclosed in FIG. 12 after the step of FIG.
FIG. 7 (a) is a view showing a state in which the positive photoresist is removed and viewed from a surface assuming an ABS surface, FIG.
FIG. 17B is a configuration diagram showing a case where FIG. 17A is viewed from above with respect to the substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Insulating film 3 MR sensor part 4A, 4B Vertical bias film 5A, 5B Electrode film 6, 7, 9, 12 Photoresist 8 Gold 10A, 10B First electrode film 11A, 11B Second electrode film X Air・ Bearing surface

Claims (9)

[Claims] 1. An electrode film, which has a predetermined area and is formed in a thin film on a predetermined member such as a magnetoresistive head, and functions as an electrode portion. The electrode film has a body-centered cubic structure and 1,
An electrode film comprising a molybdenum film having a crystal grain size in the direction perpendicular to the (0) plane of 150 angstroms or more. 2. An electrode film, which has a predetermined area and is formed in a thin film on a predetermined member such as a magnetoresistive head, and functions as an electrode portion. The electrode film has a body-centered cubic structure and 1,
An electrode film comprising a molybdenum film having a crystal grain size of 150 angstroms or more in a direction perpendicular to the (0) plane, and heat-treating the electrode film at a temperature of 200 ° C. or more for 1 hour or more. 3. A magnetoresistive effect sensor section patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor section in a single domain state, and a layer of the magnetoresistive effect sensor section. A magnetoresistive effect head comprising an electrode film electrically connected to the electrode film, wherein the electrode film has a body-centered cubic structure and
A magnetoresistive effect head comprising a molybdenum film having a crystal grain size in the direction perpendicular to the (0) plane of 150 angstroms or more. 4. A magnetoresistive effect sensor section patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor section in a single domain state, and a layer of the magnetoresistive effect sensor section. A magnetoresistive head having an electrode film electrically connected to the electrode film, wherein the electrode film has a body-centered cubic structure and
0) plane is composed of a molybdenum film having a crystal grain size of 150 angstroms or more, and the electrode film is 100 angstroms or more and 10000 or more.
A magnetoresistive head having a thickness of less than angstrom. 5. A magnetoresistive effect sensor part patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor part in a single domain state, and a layer of the magnetoresistive effect sensor. A first electrode film that is electrically connected and exposed to the air bearing surface, and is laminated on the first electrode film in an electrically connected state and at a position away from the air bearing surface. A second electrode film provided, wherein the first electrode film has a body-centered cubic structure and has a crystal grain size of 150 in the direction perpendicular to the (1,1,0) plane.
A magnetoresistive head comprising a molybdenum film of angstrom or more. 6. A magnetoresistive effect sensor portion patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor portion in a single magnetic domain state, and a layer of the magnetoresistive effect sensor. A first electrode film that is electrically connected and exposed to the air bearing surface, and is laminated on the first electrode film in an electrically connected state and at a position away from the air bearing surface. A second electrode film provided, wherein the first electrode film has a body-centered cubic structure and has a crystal grain size of 150 in the direction perpendicular to the (1,1,0) plane.
A magnetoresistive effect head comprising a molybdenum film having a thickness of angstrom or more, and heat-treating the first electrode film at a temperature of 200 ° C. or more for 1 hour or more. 7. A magnetoresistive effect sensor section patterned in a film shape in a predetermined shape on a substrate, a longitudinal bias film for setting the magnetoresistive effect sensor section in a single domain state, and a layer of the magnetoresistive effect sensor. A first electrode film that is electrically connected and exposed on the air bearing surface, and is laminated on the first electrode film in an electrically connected state and at a position away from the air bearing surface. Second set
Wherein the first electrode film has a body-centered cubic structure, and has a crystal grain size of 150 in the direction perpendicular to the (1,1,0) plane.
The first electrode film is heat-treated at a temperature of 200 ° C. or more for 1 hour or more, and the first electrode film is set to a thickness of 100 Å or more and 1000 Å or less. A magnetoresistive head characterized by the following. 8. The magnetoresistive head according to claim 5, 6 or 7, wherein gold is used as a material of the second electrode film layer. 9. The magnetoresistive head according to claim 5, 6, 7 or 8, wherein the thickness of the second electrode film is set to be 1000 angstroms or more and 10000 angstroms or less.