JPH09133689A - Very small probe, probe using the same, manufacture of the same, and information processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe manufacturing method by which a probe which can be constituted of multiple probes can be manufactured easily and an information processor using the probes. SOLUTION: After a recessed section 3 is formed on the surface of a first substrate 1, a releasable layer 4 is formed on the surface of the substrate 1 including the recessed section 3 and the layer 4 is coated with an organic compound layer 101 of conductive organic compound layer as a very-small probe layer 5. Then a joining layer 7 is formed on a second substrate 8 and the organic compound layer 10 or conductive organic compound layer on the releasable layer 4 of the first substrate 1 is joined with the joining layer 7 of the second substrate 8. Thereafter, the layer 101 or conductive organic compound layer is transferred to the joining layer 7 by stripping off the layer 101 or conductive organic compound layer at the boundary between the releasable layer 4 and the layer 101 or conductive organic compound layer.

Description

Description: TECHNICAL FIELD The present invention relates to a scanning tunneling microscope.
Microscope or atomic force microscope that detects minute force, etc.
Alternatively, apply a scanning probe microscope to reproduce high-density recording.
Microprobe for use in a device for performing living, and the microprobe and thin
Probes consisting of membrane cantilevers and information using these
In particular, the above-mentioned applications have a small tip curvature.
It has excellent characteristics and can be used for multiple probes.
A method for manufacturing a micro probe that can manufacture needles with high mass productivity
You. Recently, the electronic structure of surface atoms of a conductor has been directly investigated.
Observable scanning tunneling microscope (hereinafter referred to as "STM")
Has been developed (G. Binnig et al. P.
hys. Rev .. Lett. , 49, 57 (198
3)), high resolution of real space image regardless of single crystal or amorphous
Now you can measure. Such STM is metallic
Apply a voltage between the tip and the conductive material to
When approaching to a distance of about m, the tunnel current
It uses the flow. This current changes the distance between the two
It is very sensitive to
By scanning the probe to keep the channel current constant
To observe the surface structure in real space with atomic resolution.
Can be. In addition, by developing STM technology, insulating materials, etc.
Atomic force microscope that can observe the surface of the surface with the same resolution as STM
Microscope (hereinafter abbreviated as AFM) has also been developed (US
(Patent No. 4,724,318). So take
Scanning probe microscopes such as STM and AFM (hereinafter SP
Abbreviated as M. ) Is applied to the recording medium
You can access, record, and play back on the atomic or molecular scale.
Proposal to realize high-density memory by
(US Pat. No. 4,575,822)
, JP-A-63-161552, JP-A-63-1
61553). Such information recording / reproducing apparatus
Considering the application, SPM in order to achieve high recording density
It is desirable that the radius of curvature of the tip of the probe is small. Ma
At the same time, the function of the recording / playback system was improved, especially the speedup.
From the viewpoint of
Multi-needle) has been proposed, but for this reason the same
It is necessary to fabricate a probe with uniform characteristics on the substrate.
You. Conventionally, as a method for forming a microprobe as described above,
Using single crystal silicon using semiconductor manufacturing process technology
It is well known that microprobes formed by anisotropic etching
(US Pat. No. 5,221,415). This
As shown in FIG. 11, the method of forming the microprobe is as follows.
Silicon coated with a mask of silicon oxide 510, 512
Pit 518 on the wafer 514 by anisotropic etching.
This pit is used as the female type of the probe, and silicon dioxide is used.
510 and 512 are removed, and then a silicon nitride layer 5 is formed on the entire surface.
20 and 521 are covered and cantilever and fine
Pyramid-shaped pit 522 to be a small probe is formed and cantilevered.
After patterning in a beam shape, the silicon nitride layer 5 on the back surface
21 was removed and saw cut 534 and Cr layer 532 were provided.
Bond the glass plate 530 and the silicon nitride layer 520 and
By removing the conwafer 514 by etching,
The silicon nitride transferred to the mounting block 540
A probe consisting of a new probe and a cantilever
Things. Finally, a reflective film for the optical lever type AFM on the back side
A metal film 542 to be the following is formed. Further, as shown in FIG. 12 (a), an example
For example, the thin film layer 202 on the substrate 201 is circularly patterned.
Then, using it as a mask, the substrate 201 is etched and the substrate is
Method of forming probe 203 using id etching
(O. Wolter, et al., ¨ Microma
chined silicon sensors fo
r scanning force microsco
py., J. Vac. Sci. Technol. B9
(2), Mar / Apr, 1991, ppl353-1.
357) and as shown in FIG.
Based on the resist opening 206 of the resist 205
While rotating the plate 204, the conductive material 207 is obliquely attached.
The probe 208 is formed by vapor deposition and lift-off.
Method proposed by Spindt et al.
(CA Spindt, et al., ¨Physi.
cal properties of thin fi
lm field emission cathode
with mollybdenum cones,
J. Appl. Phys. , 47.1976, pp52
48-5263). More recently, novolac resins have been used.
Then, a cantilever was formed by photolithography.
After that, the probe is moved by electron beam deposition.
Method of forming (R. Pechmann, et al.,
The Novolver: A new canti
lever for scanning forces
microscopy microfabricated
from polymeric materials
¨, Rev. Sci. instrum. , 65 (1
2). 1994, pp3702-3706)
ing. [0006] However, the conventional example
The method for manufacturing the microprobe has the following problems.
Was. For example, in the conventional microprobe as shown in FIG.
The manufacturing method has the following problems. (1) The silicon substrate that became the female type of the probe is
Productivity will not be reusable because it will be removed.
Lowers the manufacturing cost. (2) Etch the silicon substrate that is the female type of the probe
Therefore, the material of the probe with the etching solution on the probe surface
Deterioration, shape deterioration, contamination from etching solution, etc.
May be (3) Furthermore, a micro probe is formed on the thin film cantilever.
In case of AFM
The cantilever is formed by the film stress of the reflective film.
Will warp. In addition, the conventional example as shown in FIG.
In the manufacturing method of the small probe, (4) the etching conditions of silicon when forming the probe,
Resist patterning conditions and conductive material deposition conditions
Strict process management is required to keep the
Correct the height and radius of curvature of the tips of the formed microprobes.
There was a problem that it was difficult to maintain a precise shape. (5) Further, the material of the microprobe of FIG. 12 (b) is metal.
Since it is configured, when formed on the cantilever,
It is not suitable for high-speed scanning, and is
Therefore, it is necessary to reduce the weight of the microprobe. (6) Furthermore, the surface of the conventional microprobe is an oxide,
Since it is made of metal, etc., it exists between the microprobe and the sample.
It is easily affected by adsorbed water and has good sensitivity to friction force and adsorption force.
Difficult to measure. (7) In addition, the cantilever is made of novolac resin.
In this case, it is possible to reduce the rigidity of the cantilever.
However, the materials for cantilevers and microprobes are limited.
Therefore, the yield stress of the cantilever decreases.
There is a title. Therefore, the present invention addresses the above-mentioned problems of the conventional branch surgery.
To solve the problem, the choice of probe materials is wide and versatile.
An object of the present invention is to provide a method for manufacturing a micro probe. Ma
In addition, the present invention enables reuse of the female mold and improves productivity.
We provide a method for manufacturing microprobes that can reduce manufacturing costs.
The porpose is to do. In addition, the present invention is an etching solution
Deterioration of material, shape deterioration, and etching solution
Of micro-tips that can form micro-tips without contamination from water
The aim is to provide a method. In addition, the present invention is
Quantization is possible, and the resonance frequency is high,
It is an object of the present invention to provide a fine probe having good flexibility. Ma
Further, the present invention is directed to the adsorption existing between the microprobe and the sample surface.
To provide a microprobe that can reduce the influence of water.
aimed to. Further, the present invention uses a reflective film for the probe.
To provide a probe that does not need to be formed on the entire back surface
With the goal. Furthermore, the present invention is reproduced as a minute probe.
A uniform shape with good properties can be obtained, and the tip can be formed sharply.
Of the probe that makes it easy to use multiple probes
Provide a manufacturing method and an information processing apparatus using them
The purpose is to: The present invention solves the above problems.
In order to determine, a microprobe, a probe using the microprobe,
And the method of manufacturing the microprobe is configured as follows.
It is a thing. That is, the microprobe of the present invention is
With a micro probe for detecting micro force, which is installed on the
The microprobe is formed of an organic compound layer.
It is characterized by. And the microprobe of the present invention is
It may be installed on the substrate through a metal layer,
The organic compound layer is a fluorine compound or a polyimide compound.
It can be formed of objects. Further, the microprobe of the present invention
Is a tunneling current installed on the substrate through a junction layer,
Alternatively, a micro probe for detecting a micro force, which is
Characterized by being formed of a conductive organic compound layer
I have. Further, the microprobe of the present invention has a base through a metal layer.
The conductive organic compound may be installed on the plate.
Of the charge transfer complex, the conductive polymer, or the conductive layer.
Formed by a conductive resin layer in which an electric substance is mixed with thermosetting resin
can do. In addition, these minute
The probe has a hollow region surrounded by the bonding layer.
It is characterized by having. In addition, such micro search
Thin film cantilever with one end fixed to the substrate using a needle
The microprobe is attached to the free end of the
Can be combined to form a probe. And this
In the case of, the joint layer is used as a probe
Use as an optical reflection film when detecting flexural displacement
Becomes possible. In addition, according to the present invention, these odors
The resistance between the microprobe and the extraction electrode of the microprobe.
The value is preferably 1 to 100 MΩ. Furthermore, the method of manufacturing the microprobe of the present invention is
In a method of manufacturing a micro probe for detecting a micro force, a first substrate
Forming a recess on the surface of the first substrate, and
A step of forming a release layer on the substrate including the first substrate;
Coating the exfoliation layer with an organic compound layer as a microprobe layer
A step of forming a bonding layer on the second substrate,
The organic compound layer on the release layer including a part, the second substrate
Bonding to the bonding layer, and peeling on the first substrate
Peeling is performed at the interface between the layer and the organic compound layer, and the second group
A step of transferring the organic compound layer to the bonding layer on the plate,
It is characterized by having at least. And the main
In the light, the step of coating the organic compound layer is
An organic compound as a microprobe layer on the release layer of the first substrate
Coating a metal layer on the organic compound layer after coating the layer
And a step of transferring the organic compound layer to the bonding layer.
The step of copying the metal layer on the organic compound layer
A step of transferring with the layer can be included.
In addition, the method of manufacturing the microprobe of the present invention includes a tunnel current,
Alternatively, in a method of manufacturing a micro probe for detecting a micro force,
A step of forming a recess on the surface of one substrate;
Forming a release layer on the substrate including the recess, and the first step
Conductive organic compound as a microprobe layer on the release layer of the substrate
Coating the layers and forming a bonding layer on the second substrate
And the conductive organic compound layer on the release layer including the recess
A step of joining the first layer to the bonding layer of the second substrate;
At the interface between the release layer on the substrate and the conductive organic compound layer
After peeling, the conductive organic layer is formed on the bonding layer on the second substrate.
And a step of transferring the compound layer.
Features. And in the present invention, the conductive
The step of coating the volatile organic compound layer includes peeling the first substrate.
A conductive organic compound layer as a microprobe layer is coated on the layer.
And then coating a metal layer on the conductive organic compound layer
And transferring the organic compound layer to the bonding layer.
The step of forming a metal layer on the organic compound layer as the organic compound layer.
It may include a step of transferring together. Further, a method of manufacturing the probe of the present invention
The method consists of a microprobe and a thin film cantilever for detecting a micro force.
In the method of manufacturing a probe, the concave portion is formed on the surface of the first substrate.
A step of forming a portion, and on the substrate including the concave portion of the first substrate
Forming a release layer on the release layer on the first substrate
A step of coating an organic compound layer as a microprobe layer,
2. Forming a thin film cantilever on a substrate, and the thin film
Forming a bonding layer on the tip of the cantilever;
Part of the organic compound layer on the release layer,
A step of joining to the joining layer on the tip of the chelator;
Peeling is performed at the interface between the peeling layer on the plate and the organic compound layer.
The organic layer is formed on the bonding layer on the tip of the thin film cantilever.
Step of transferring the compound layer and one end of the thin film cantilever
However, the thin film cantilever is fixed to the second substrate.
A step of removing a part of the lower second substrate,
It is characterized by having both. And in the present invention
In addition, the step of coating the organic compound layer includes the first step.
An organic compound layer as a microprobe layer is coated on the release layer of the substrate.
And then covering the organic compound layer with a metal layer.
And transferring the organic compound layer to the bonding layer
A step of co-imposing a metal layer on the organic compound layer with the organic compound layer.
It may be possible to include a step of transferring to. Also,
In the present invention, a method of manufacturing these probes or a professional method
In the method for producing a tube, the organic compound layer is coated.
The process involves coating and curing the organic compound layer.
Can be configured to have a
The substrate is a single crystal silicon substrate, and the crystal axis is anisotropically etched.
To form a recess on the surface of the first substrate by pressing
can do. In addition, the method for producing the probe of the present invention
Is a thin film with a microprobe for detecting tunnel current or micro force.
In the method of manufacturing a probe composed of a membrane cantilever,
Forming a recess on the surface of the first substrate, and the first substrate
Forming a release layer on the substrate including the concave portion of
Conductive organic compound as a microprobe layer on the release layer of one substrate
The step of coating the material layer and the thin film cantilever on the second substrate.
Forming process and bonding layer on the tip of the thin film cantilever
And a step of forming the conductive layer on the release layer including the recess.
A conductive organic compound layer on the tip of the thin film cantilever.
Bonding to the bonding layer, and peeling on the first substrate
Peeling at the interface between the layer and the conductive organic compound layer,
The conductive organic compound is added to the bonding layer on the tip of the thin film cantilever.
Of transferring the material layer and one end of the thin film cantilever
However, the thin film cantilever is fixed to the second substrate.
A step of removing a part of the lower second substrate,
It is characterized by having both. And in the present invention
In addition, the step of coating the conductive organic compound layer is
A conductive organic layer as a microprobe layer on the release layer of the first substrate
A metal on the conductive organic compound layer after coating the compound layer
A step of coating a layer, and the conductive layer is applied to the bonding layer.
Of transferring a conductive organic compound layer is a conductive organic compound layer.
Transferring the upper metal layer together with the conductive organic compound layer
Can be included. In the present invention,
Is a method for manufacturing these probes or a method for manufacturing a probe.
In, the step of coating the conductive organic compound layer,
Process of coating and curing conductive organic compound layer
And the first substrate is a single substrate.
A crystalline silicon substrate, and the first substrate is a single crystal
It is a silicon substrate and is
It can be configured to form a recess on the surface of the first substrate.
Wear. And again, the second substrate is a single crystal Si substrate.
An insulating layer formed on the substrate and formed on the insulating layer
It can be formed from a single crystal Si layer, in which case this
The electric resistance of the single crystal Si layer is 0.0 lΩ · cm or less.
Preferably. Further, in the present invention, the above
Such a micro probe or a probe,
Information is recorded and / or reproduced on a recording medium via a probe.
You can configure an information processing device that
An elastic member that supports a probe as an information processing device.
Is deformed by the force acting between the probe and the recording medium,
By compensating for the gap variation between the probe and recording medium
Control the probe / recording medium interval, and
By detecting the current between the probe and recording medium
An information processing device that performs reproduction can be configured. BEST MODE FOR CARRYING OUT THE INVENTION As described above, the present invention seeks for a female mold.
Forming a needle material and transferring it to form a microprobe
Enables a versatile micro probe with a wide selection of probe materials.
The needle can be manufactured. In addition, the present invention, as described above,
Without removing the female mold of the probe material by etching in the subsequent process
By forming the probe, the female mold can be reused and
It is possible to improve productivity and reduce manufacturing costs. Also book
According to the invention, the material of the microprobe is inferior due to the etching solution.
Minute, no deterioration of shape, no contamination from etching solution
It becomes possible to form a probe. The present invention is as described above.
By using various methods for manufacturing microprobes,
Use organic compounds or conductive organic compounds as materials
It is possible to reduce the weight of the microprobe and reduce the resonance frequency.
The number of microprobes with good followability in high-speed scanning
It becomes possible to realize the provision. Further, the present invention is
Water repellency by using organic compounds as the material of the small probe
It is now possible to select materials with high
It is possible to reduce the influence of the adsorbed water existing between the sample surfaces.
It becomes possible. In addition, the present invention can be used only for the fine probe.
Since it can be formed on the joining layer at the bar tip, joining
The layer can be used as a reflection film, and
Can provide probes that do not need to be formed on the surface
You. Furthermore, the present invention provides a fine probe with good reproducibility.
A uniform shape can be obtained, and the tip can be formed sharply.
A method for manufacturing a probe that facilitates multiple production
And information processing equipment using them.
You. Further, in the present invention, the first substrate is single-bonded.
As a crystalline silicon substrate, for anisotropic etching by the crystal axis
A single bond with a concave part consisting of the (111) crystal plane
By forming a microprobe material on a crystal substrate,
The concave part that is the female type of the small probe has a sharp tip and the same substrate
If multiple layers are formed on top, they will have the same shape,
As a result, the microprobe obtained has uniform characteristics. Further, in the present invention, the probe material layer is
Characterized by being an organic compound, weight saving of the probe
It is possible to Organic compound used in the present invention
Is moldable and has excellent heat resistance and solvent resistance.
All that is needed is various fluorine compounds and various polyimide compounds.
It is possible to use things and the like. Used in the present invention
Examples of the fluorine compound include polytetrafluoroethylene.
Tylene (Teflon brand name), Teflon FEP, Teflon
Teflon compound known as PFA
However, the polyimide compound used in the present invention is a carboxylic acid.
Obtained by subjecting an anhydride and a diamine to a condensation reaction
Obtained by heating a polyimide precursor
You. Examples of such carboxylic acid anhydrides include pyromellitic
Acid anhydride 3,3 ', 4,4'-biphenyltetra
Carboxylic anhydride 3,3 ', 4,4'-benzopheno
Tetracarboxylic anhydride, 2,2-bis (3,4-di
Carboxyphenyl) -1,1,1,3,3,3, hex
Safluoropropanoic anhydride and the like, and diamine
Phenylenediamine, 4,4'-oxydianili
4,4'-dioxyphenylenedianiline, 4,
4'-phenylenedianiline, 4,4'-thiodianili
4,4'-Sulfonyldianiline, 4,4'-Me
Tolylenedianiline, 2-bis (4-aminophenyl)-
1,1,1,3,3,3-hexafluoropropane, etc.
Is mentioned. Furthermore, such polyimide precursors are
Some of the above structural units may be included in the main chain of the limer.
2 or more carboxylic acid anhydrides and / or 2 or more
It is also possible to use a copolymer using the above diamine. Ma
Further, in the present invention, the probe material layer is a conductive organic compound.
It is possible to reduce the weight of the microprobe.
It is. The conductive organic compound used in the present invention is also
It is sufficient that the object be moldable, for example, metal phthalocyanine.
Tetracaniquinodimethane-tetrathiofulvalene
(TCNQ-TTF) or other charge transfer complex, or
Conducting acetylene, polyphenylene vinylene (PPV), etc.
Electropolymer, carbon black, carbon phi
Bar, charge transfer complex etc. with epoxy resin, silicone resin,
3 to thermosetting resins such as phenol resin and melamine resin
It is possible to use a conductive resin added with 30%
You. The specific resistance of such a conductive organic compound depends on the type of conductive material.
10 depending on the amount ^-Five -10 ⁶ In the range of Ω · cm
Between the microprobe and the extraction electrode.
It is easy to set the resistance value to a desired value. for that reason
In addition, information is recorded using a sample whose resistance value changes partially.
For recording / playback, the microprobe and extraction electrode
It is possible to suppress an excessive current flowing between them. Ma
Also, the conductivity of the charge transfer complex and the conductive polymer is improved.
In order to improve the conductivity of the conductive resin,
A cross-linking agent or the like for improving formability may be added. Further, in the present invention, from the first substrate
To facilitate transfer to the second substrate, a probe is attached to the first substrate.
Before forming the material layer, a release layer is provided. Such a release layer
The material needs to have low reactivity and low adhesion to the probe material.
It is. An example of such a material is a probe material.
In case of CFC, SiO2, Au, Pt, etc. can be used
You. These materials are produced by sputtering or vacuum deposition.
Can be formed. In addition, the first substrate 1
If you use
Silicon dioxide (SiO2) can be obtained. this
The method of forming silicon dioxide by oxidation is as follows:
Method), method using sulfuric acid + hydrogen peroxide solution, boiling
There is a method using boiling water, a method using a thermal oxidation furnace, etc.
To thermally oxidize the silicon surface using a thermal oxidation furnace
Is excellent in terms of reproducibility, controllability, and deposition rate. Also,
The probe material layer is bonded to the bonding layer formed on the second substrate by pressure bonding.
A metal layer on the probe material layer before joining.
By providing the metal and gold forming the bonding layer
Metallic bonding of the metal layer makes the probe material stronger
It is possible to transfer the layer onto the bonding layer. Note that the probe
Conventionally known methods for forming the material layer, release layer, and bonding layer
Techniques such as spinner method, dipping method, spray
Method, vacuum deposition method, sputtering method, chemical vapor deposition method, etc.
Using fabrication technology, photolithography process,
And apply etching to obtain the desired pattern.
To run. Remove the microprobe from the recess on the first substrate.
Since the surface shape of the delamination is faithfully reproduced,
Not restricted. In addition, the microprobe manufactured in this way
The needle has a hollow area surrounded by the bonding layer,
When a micro probe is provided on the free end of a thin film cantilever,
Compared with the probe manufactured by the forming method of FIG.
It is lightweight and has a resonance circumference of a cantilever with a probe.
The decrease in wave number can be suppressed. The probe material layer of the present invention may be an organic compound layer.
In the probe formed in step 2, the thin film cantilever is formed on the second substrate.
A thin film can be formed by forming a layer that will become a lever in advance.
Providing a patterned bonding layer on the tip of the chilever,
After bonding and transferring the probe material layer on the release layer to the bonding layer,
One end of the thin film cantilever is fixed to the second substrate
Removing part of the second substrate below the thin film cantilever
Allows a cantilever type probe with a microprobe at its free end.
It is possible to make lobes. Further, the probe material layer of the present invention is made conductive.
In the probe formed of the organic compound layer, the second substrate
As a Si oxide layer 103 on the Si single crystal substrate 101 and
The substrate on which the Si single crystal layer 107 is formed, that is, SOI (s
ilicon on insulator) substrate
It is possible to To use such an SOI substrate
Two, a tunnel current extraction electrode and a mechanical elastic body
It becomes possible to have a role of. Where Si single crystal layer
It is preferable that 107 has a low resistance introduced with impurities.
As the value, it is preferable to use a value of 0.0lΩ · cm or less.
I have. The thickness of the Si single crystal layer 107 depends on the desired lever bar.
It is determined with the shape of the lever for the
Usually, it is about 0.1 to several μm. Si oxide layer 103 and
The thickness of the SiN layer 108 and
The thickness of the Si oxide layer 103 is usually
0.1 to 1.0 μm, the SiN layer 108 is 0.1 to
0.3 μm. Embodiments of the present invention will now be described with reference to the drawings.
explain. [Embodiment 1] FIG. 1 shows the first embodiment of the present invention.
Configuration of AFM cantilever probe using small probe
FIG. 1A is a top view of the probe.
(B) is a side view. FIG. 2 shows the production of the probe of this embodiment.
It is sectional drawing which shows a manufacturing process. In FIG. 2 (a), oxidation
It consists of a silicon dioxide film formed by thermal oxidation with gas.
With a crystal orientation plane of <100> on which the protective layer 2 is formed.
A conwafer is prepared as the first substrate 1. Photolithography
Mask with photoresist formed by Luffy process
As a result, a desired portion of the protective layer 2 is treated with an HF aqueous solution.
To expose 8 μm square silicon. protection
The layer 2 is formed by etching the first substrate 1 by crystallographic anisotropic etching,
It is a protective layer when forming the concave part that becomes the female type of the needle, and the crystal
It has etching resistance to an axially anisotropic etching solution.
After removing the photoresist, the first substrate is
Bond with an aqueous solution of potassium hydroxide (KOH) at a liquid temperature of 80 ° C.
Crystal axis anisotropic etching, depth of 5.6 μm (111)
The inverted pyramid-shaped recess 3 having the crystal plane of was formed. Next, the protective layer 2 is etched with an aqueous HF solution.
After the removal, the first substrate 1 is thermally oxidized with an oxidizing gas.
Then, the silicon dioxide film 4 is formed on the first substrate including the recess 3 by one.
000Å was formed to form the release layer 4 (FIG. 2 (b)). Next, as shown in FIG. 2 (c), a fine probe material
Fluorine resin containing Teflon as a main component
Chemical Japan Co., Ltd., trade name Teflon heat resistant TF
E-coat) to a thickness of 1 μm by spraying
Apply, cure, Teflon organic compound layer
101 was formed. Then Cr30 on the probe material layer
Å, Au400Å formed by vacuum deposition method, metal layer 6
Was coated on the probe material layer. Photo of the metal layer
Patterning by lithographic process and etching
And reactive ion etching with O2.
By etching using the metal layer 6 as a mask,
5 was formed. Next, as the second substrate 8, a single crystal silicon base is used.
Prepare a plate and put silicon dioxide 13 on both sides of the second substrate 8.
A film of 0.3 μm and silicon nitride 14 of 0.5 μm was formed.
Next, the silicon nitride 14 on the surface is removed by photolithography and
The cantilever 9 (cantilever) shape by
I turned. At this time, the size of the cantilever is width 5
The length was 0 μm and the length was 125 μm. Next, the silicon nitride 14 and the dioxide on the back surface are
Similarly, the silicon 13 is patterned into an etching mask shape.
I did. Next, titanium Ti is 30Å and gold Au is 500.
Å A film is formed and patterned by photolithography and etching.
Forming the bonding layer 7 on the cantilever.
Was. Next, on the microprobe 5 on the first substrate 1 and on the second substrate 8,
Position the bonding layer 7 so that they face and contact each other, and further load
Is applied to bond the microprobe 5 and the bonding layer 7 (pressure).
Wearing) (see FIG. 2 (d)). Next, the first substrate 1 and the second substrate 8 are separated from each other.
As a result, the peeling layer 4 and the microprobe 5 are separated at the interface.
(See FIG. 2 (e)). Next, as the surface protection layer 15, A
Z resist (trade name AZ1370) is applied by spin coating.
Applied and baked to form (not shown). Next, the silicon nitride 14 on the back surface is etched.
Gumask and 30% potassium hydroxide heated to 90 ℃
Etching of the silicon substrate 8 from the back side with an aqueous solution
went. Next, a mixed aqueous solution of hydrofluoric acid and ammonium fluoride
To remove the silicon dioxide layer 13. Finally,
To remove the surface protection layer and remove the cantilever
Formed (see FIG. 7 (f)). With the probe for the AFM of the present embodiment,
Is a thin film cantilever for laser reflection for displacement measurement.
It can be done on the back side of the bonding layer provided at the tip of the
Is a substitute for. This makes the reflective film a thin film cantilever.
Thin film cantilevers do not need to be formed on the entire back surface of
Eliminates the warp caused by the film stress of the reflective film, which has been a problem in the past
be able to. The microprobe 5 manufactured by the above method is
When observed with a SEM (scanning electron microscope),
Inverse pyramid formed by crystal axis anisotropic etching of silicon
The replicated shape of the head.
a micro probe with a sharp tip.
After confirming that it is a needle, the radius of curvature of the tip of the microprobe is
It was 0.03 μm. In addition, the professional created in this example
The resonance frequency by externally applying vibration to the
When measured, it was 50 kHz. Optical lever method using the microprobe 10 of this embodiment
Formula AFM device was made. A block diagram of this device is shown in FIG.
Shown in The AFM device has a thin film cantilever 51 and a bonding layer 4.
8 and a micro probe 50 bonded to the bonding layer
And laser light 61 and thin film cantilever free end joining
A lens 62 for condensing laser light on the back surface of the layer, and a thin
Changes in the light reflection angle due to the deflection displacement of the film cantilever
Position sensor 63 to detect and position sensor
A displacement detection circuit 66 for detecting displacement based on these signals;
YZ axis drive piezo element 65 and XYZ axis drive piezo element
XYZ driver 6 for driving the XYZ direction
7 Made of mica using this AFM device
After bringing the probe close to the sample 64,
By driving the piezo element 65 in the XY directions, the sample surface
Observation of the AFM image of the
Could be observed. Also used in this example
The position sensor of the AFM device uses a 4-division sensor
Therefore, it is also possible to detect frictional force.
Then, after observing the AFM image, the friction force was detected.
Well, it was detected with high sensitivity. In addition, measure the force curve
When determined, the amount of adsorbed components is small and the effect of adsorbed water is reduced
I found out that it was done. [Embodiment 2] In Embodiment 2, a micro probe
A polyimide precursor represented by Formula 1 was used as the material. Book
In the example, the first substrate was formed in exactly the same manner as in the example 1.
Then, in front of the polyimide that is the microprobe material shown in Formula 1.
Apply the spinner to the thickness of 1μm by spinner method
Heat treatment at 300 ° C. for imidization,
A probe material layer 7 made of amide was formed. (Equation 1) Continue to put Cr30Å and Au400Å on the probe material layer.
It was formed by the vacuum evaporation method, and the probe material layer was coated.
Then, in the same manner as in Example 1, a microprobe was formed on the bonding layer on the second substrate.
A needle was joined to create a cantilever type probe. Heel
SEM observation of the microprobe with
0.03 μm, the resonance frequency of the probe is 46 kHz
It was z. Using such a probe, as in Example 1.
AFM observation of the mica surface revealed that the mica surface
I was able to observe the step image of. In addition, Example 1
The frictional force was detected in the same manner as
Was. Furthermore, when the force curve was measured, the adsorption
It can be seen that the amount is small and the influence of the adsorbed water is reduced.
Was. [Example 3] In Example 3, the probe material
A polyimide precursor represented by the formula 2 was used. (Equation 2) In this example, the first substrate was formed exactly as in Example 1.
After that, the polyimide of the microprobe material shown in Formula 2
Apply the precursor to a thickness of 1μm by spinner method
Heat treatment at 300 ° C. for imidization,
An organic compound layer 101 made of amide was formed. continue,
A cantilever type probe was formed in the same manner as in Example 1.
Was. However, in this embodiment, as shown in FIG.
The probe material is directly on the bonding layer without providing a metal layer on the material layer.
By bonding the layers, crimping the probe material layer and the bonding layer
Was performed. In addition, the bonding layer is formed by vacuuming aluminum Al.
A 3000Å film was formed by the vapor deposition method, and the same procedure as in Example 1 was performed.
It was formed by turning. Then, as in Example 1,
When observing the small probe with SEM,
The radius of curvature of the tip of the needle is 0.03 μm,
The vibration frequency was 51 kHz. With such a probe
AFM observation of the mica surface was conducted in the same manner as in Example 1.
However, the step image on the surface of the mica can be observed.
Was. Further, when the frictional force was detected in the same manner as in Example 1,
It was detected with high sensitivity. In addition, measure the force curve
As a result, the amount of adsorbed components is small and the influence of adsorbed water is reduced.
I found out. [Embodiment 4] In Embodiment 4, the release layer is
The same as Example 1 except that Au was used. Book
The probe formed in Example was evaluated in the same manner as in Example 1.
However, the radius of curvature of the tip of the microprobe is 0.04 μm,
The resonance frequency of the probe was 46 kHz. Such a plot
AFM observation of mica surface using
When doing, you can observe the step image on the surface of the mica.
I was able to. Further, the frictional force was detected in the same manner as in Example 1.
However, it was detected with high sensitivity. In addition, the force curve
As a result of measuring the
It turned out that it was reduced. [Fifth Embodiment] FIG. 5 shows a fifth embodiment of the present invention.
FIG. 6 is a cross-sectional view showing the steps of the first method for manufacturing a microprobe.
You. In FIG. 5 (a), it is formed by thermal oxidation with an oxidizing gas.
The protective layer 2 composed of the formed silicon dioxide film was formed.
The first substrate 1 is a silicon wafer having a crystal orientation plane of <100>.
Prepare as. Shaped by photolithography process
The protective layer 2 is formed by using the formed photoresist as a mask.
8μm square by etching the desired area with HF solution
Exposed silicon. The protective layer 2 crystallizes the first substrate 1.
Axial anisotropic etching is performed to form the concave part that will be the female type of the microprobe.
It is a protective layer when it is formed,
It has etching resistance. Strip the photoresist
After that, the first substrate is treated with potassium hydroxide (KO) having a concentration of 27%.
H) Crystalline axis anisotropic etching at 80 ° C in an aqueous solution
The reverse pits composed of (111) crystal planes with a depth of 5.6 μm.
A ramid-shaped recess 3 was formed. Next, the protective layer 2 is etched with an HF aqueous solution.
After the removal, the first substrate 1 is thermally oxidized with an oxidizing gas.
Of the silicon dioxide film on the first substrate including the recess 3.
A peeling layer 4 having a thickness of 1000 liters was formed (see FIG. 5B). Next, as shown in FIG.
Vacuum vapor deposition of copper phthalocyanine as the compound layer 101 '
To form a film with a thickness of 1 μm on the entire surface.
Vacuum deposition of Cr30Å and Au400Å on the organic compound layer
To form a metal layer 6. Photolithography the metal layer
Patterning by graphic process and etching
And by reactive ion etching with O2,
Etching is performed using the metal layer 6 as a mask to remove the fine probe 5.
Formed. Next, a silicon wafer is used as the second substrate 8.
I mean, vacuum vaporize Cr50Å and Au1000Å on this surface.
Thin film is successively deposited by the deposition method, and the thin film is
Patterning by sographic process and etching
Then, the bonding layer 7 was formed (not shown). Next, the microprobe 5 and the second probe on the first substrate 1
The bonding layer 7 on the plate 8 is aligned to face and contact,
By further applying a load, the contact between the microprobe 5 and the bonding layer 7
Bonding (pressure bonding) was performed (see FIG. 5D). After this, first
By separating the substrate 1 and the second substrate 8 from each other,
On the peeling layer 4 by peeling at the interface with the microprobe 5.
Only the microprobe 5 is transferred onto the bonding layer 7 and shown in FIG.
The fine probe 5 was successfully manufactured. The microprobe 5 manufactured by the above-mentioned method
When observed with a SEM (scanning electron microscope),
Inverse pyramid formed by crystal axis anisotropic etching of silicon
The replicated shape of the head.
a micro probe with a sharp tip.
After confirming that it is a needle, the radius of curvature of the tip of the microprobe is
It was 0.03 μm. STM apparatus using the microprobe 5 of this embodiment
Was prepared. A block diagram of this device is shown in FIG. In the figure,
70 is a bias voltage application circuit, 12 is a tunnel current amplification
Circuit, 13 is an XYZ driving driver, 8 is a second substrate,
7 is a bonding layer, 5 is a microprobe, 11 is a sample, and 15 is XYZ.
It is an axial drive piezo element. Here, the micro probe 5 and the sample 11
The tunnel current It flowing between and is detected through the junction layer 7.
And give feedback so that It is constant,
The XYZ axis drive piezo element 15 is driven in the Z direction to perform a micro search.
The distance between the needle and the sample is kept constant. Bonding layer
It was used as a current extraction electrode. Furthermore, XYZ axis drive
The sample can be obtained by driving the moving piezo element 15 in the XY directions.
An STM image, which is a two-dimensional image of 11, can be observed. This device
As sample 11, HOPG (highly oriented pyrolysis graphi
G) Bias current of 1 nA and scan area on the cleaved surface of the substrate
Observed at 100Å × 100Å, good reproducibility
I was able to obtain a good atomic image. [Embodiment 6] FIG. 7 shows a sixth embodiment of the present invention.
It is sectional drawing which shows the manufacturing process of a lobe. In Figure 7 (a)
And silicon dioxide formed by thermal oxidation with oxidizing gas
The crystal orientation plane on which the protective layer 2 made of a silicon film is formed is <10.
A silicon wafer of 0> is prepared as the first substrate 1. H
Photoresist formed by photolithography process
The desired portion of the protective layer 2 is HF
Etching with liquid exposes 8 μm square silicon
I let you. The protective layer 2 is formed by etching the first substrate 1 with crystal axis anisotropy.
The protective layer when forming the concave part that will be the female type of the microprobe.
Yes, etching resistance against crystal axis anisotropic etchant
Have sex. After removing the photoresist, concentrate the first substrate
Liquid temperature at 27% potassium hydroxide (KOH) aqueous solution
Crystal axis anisotropic etching is performed at 80 ° C. to obtain a depth of 5.6 μm.
The inverted pyramid-shaped concave portion 3 composed of the (111) crystal plane
Formed. Next, the protective layer 2 is etched with an HF aqueous solution.
After the removal, the first substrate 1 is thermally oxidized with an oxidizing gas.
Then, a silicon dioxide film 10 is formed on the first substrate including the recess 3.
00Å was formed and used as the release layer 4 (see FIG. 7B). next
As shown in FIG. 7C, as in Example 5, the conductive organic material is used.
Vacuum vapor deposition of copper phthalocyanine as the compound layer 101 '
To have a thickness of 1 μm. Continued conductive organic compound
Vacuum deposition of Cr30Å and Au400Å on the object layer 101 '
Formed by the method, and the metal layer 6 is formed into a conductive organic compound layer 10
It was vapor-deposited on 1 '. The metal layer is a photolithographic ipro
Patterning by etching and etching, and further O2
The metal layer 6 is masked by reactive ion etching using
As a mask, it was etched to form the fine probe 5. On the other hand, as the second substrate, (100) plane orientation
0.5 μm of Si oxide film 103 on the Si substrate 102 of
And a Si single crystal film 104 having a thickness of 1.0 μm is formed.
SOI (silicon on insulator)
or) substrate 8 and LP-CVD (low pre)
sure chemical vapor depo
silicon nitride (SiN) film 10 by the
5 was formed to a thickness of 0.2 μm (see FIG. 7D). Si single
The crystal film 104 has a resistance value of 0.0 lΩ · cm or less.
Was. Next, in order to etch the Si substrate 102,
A resist pattern is formed on the back side and CF4 gas is used.
The SiN film 105 is patterned by dry etching.
I did it. Next, the entire surface of the SiN film 105 is etched.
And then the Si single crystal film 107 is subjected to photolithography.
Cantilever (cantilever) by Ruffy and etching
Patterned. At this time, the size of the cantilever
Has a width of 50 μm and a length of 125 μm. Next, titanium T
i is 30 Å and gold Au is 500 Å
Pattern is formed by etching and etching
The bonding layer 7 and the extraction electrode 10 were formed on the bar (Fig.
7 (e)). Next, the fine probe 5 on the first substrate 1 and the second probe
The bonding layer 7 on the plate 8 is aligned to face and contact,
By further applying a load, the contact between the microprobe 5 and the bonding layer 7
Bonding (pressure bonding) was performed (see FIG. 7 (f)). Next, the first substrate 1 and the second substrate 8 are separated from each other.
As a result, the peeling layer 4 and the microprobe 5 are separated at the interface.
(See FIG. 7 (g)). Next, the SiN film 105 on the back surface is etched.
Use it as a mask and use a mixed gas of CF4 and H2 on the back
The Si substrate 102 was dry-etched. last
In addition, Si is treated with a mixed aqueous solution of hydrofluoric acid and ammonium fluoride.
The oxide film 103 was removed (see FIG. 7 (h)). The probe of this embodiment is used for AFM.
The thin film cantilever to reflect the laser for displacement measurement.
Can be performed on the back surface of the bonding layer provided at the tip of the
Substitute for a spray film. This allows the reflective film to be a thin film cantilever.
It is not necessary to form the entire back surface of the bar,
The bar does not warp due to the film stress of the reflective film, which has been a problem in the past.
I was able to smolder. Micro probe manufactured by the above method
When observing the needle 5 with a SEM (scanning electron microscope),
The tip is the reverse of the crystal axis anisotropic etching of silicon.
A shape that replicates the shape of the pyramid (replicate
d shape), and the tip is sharply formed
Confirm that the tip is a microprobe, and
The diameter was 0.03 μm. Also, created in this example.
Resonance frequency by applying external vibration to the probe
When the number was measured, it was 52 kHz. Next, the probe of the present invention will be described with reference to FIG.
Principle of probe contact scanning recording / playback device
Will be described. The microprobe 50 at the tip of the recording medium 64
Are placed so that they touch. Plow
In the probe, the microprobe 50 is a cantilever that causes elastic deformation.
It is supported by a bar (elastic body) 51. Where the source
The mold value is the elastic constant of the elastic deformation of the cantilever 51.
Is about 0.1 [N / m], and the amount of elastic deformation is about 1 [μm].
However, at this time, the contact force of the probe with respect to the recording medium is about 10
^-7 It becomes about [N]. X attached to recording medium 64
A probe and a recording medium by the yz-axis driving piezo element 65
It is moved in the three-dimensional direction relative to 64. Recording medium 6
Adjust the xy and z position of the probe for 4
The desired contact force on the recording medium 64 at the desired position.
The probe is aligned so as to be in contact with. Heel
The recording signal in the information processing device is a voltage applying circuit 68.
And the recording medium from the current detection circuit 69 through the fine probe 50.
It is applied to the body 64 and is applied to the part where the tip of the microprobe 50 contacts.
Recording is done locally. In the above information processing device
The recording medium is composed of an electrode substrate and a recording layer.
Is a material that changes the current that flows when a voltage is applied.
Is used. As a specific example, there is JP-A-63-161552.
And Japanese Patent Laid-Open No. 63-161553.
Like polyimide and SOAZ (bis-n-octyl)
Squarylium azulene) etc. has an electric memory effect
LB film (= Langmuir-Blodgette method
A cumulative film of an organic monomolecular film produced by the above) is mentioned.
This material has a voltage above the threshold between the probe, the LB film and the substrate.
When a pressure (about 5-10 [V]) is applied, conduction of the LB film between
The electrical property changes (OFF state → ON state), and the playback
Flows when an ass voltage (about 0.01 to 2 [V]) is applied.
The electric current to be supplied is increased. On the other hand, the electrode substrate is conductive
As long as it has a property, for example, Au, Pt, P
Metals such as d, alloys of these, graphite and silicia
And conductive oxides such as ITO
It is not something to be done. The microprobe 50 of this embodiment is replaced with the AFM described above.
Installed in the applied information processing device and recorded / played back
Describe the experiment. While monitoring the detected current,
And the recording medium 64 are brought close to each other, and in this state, x
Holds the output of the driver for yz driving, peak value 9V, power
Probe a triangular pulse voltage with a waveform with a width of 3 ms
Between the recording medium 64 and the recording medium 64.
When a bias was applied and measured, the current was about 8 μA.
Flowed to indicate that the recording medium was turned on.
There was no evidence of body destruction. Also, such recording and playback
The microprobe that was used for the experiment was again analyzed by SEM (scanning electron
When observed under a microscope, it was the same as before the recording / reproduction experiment.
It had a nice tip shape. Also, the microprobe and the extraction electrode
When the resistance value between 10 was measured, it was 10 MΩ.
Therefore, with the microprobe of this example, an excessive
It turns out that the current is limited. [Embodiment 7] In Embodiment 7 of the present invention,
Carbon fiber (trade name Toho
Bethlon HTA-C6-S, Toho Bethlon Co., Ltd.
25% methyl phenyl silicone resin
It was used as the conductive organic compound layer 101 '. Example 6
After forming the first substrate in exactly the same way,
All of the methylphenyl-based silicone resin containing fiber
It was applied by spin coating so that the surface would be 1 μm.
Then, it is heated at 120 ° C. to form the conductive organic compound layer 101 ′.
Formed. Then, in the same manner as in Example 6, the cantilever
A mold probe was formed. However, in this embodiment,
No metal layer is provided on the conductive organic compound layer as shown in FIG.
By directly bonding the probe material layer onto the bonding layer 7.
Then, the probe material layer and the bonding layer were pressure bonded. Also join
The layer 7 is made of aluminum Al by a vacuum evaporation method,
0 Å Deposition and patterning as in Example 6
Was. Thereafter, as in the fifth embodiment, the fine probe is set to SE.
When observed with M, the tip curvature of such a microprobe
The radius is 0.03 μm and the resonance frequency of the probe is 5
It was 3 kHz. In addition, the same recording / reproduction as in the sixth embodiment is performed.
As a result of the test, it was confirmed that the recording medium and the microprobe were not destroyed.
I couldn't do it. Also, between the microprobe and the extraction electrode 10.
Measured the resistance value of, it was 10MΩ
With the microprobe of this example, an excessive current during recording
Turned out to be limited. [Embodiment 8] FIG. 10 shows Embodiment 8 of the present invention.
As shown, this is an example of forming multiple microprobes.
Will be described below. When forming multiple substrates, make a mark on the first substrate.
Arrangement of a total of 100 recesses of 10 × 10 in the shape of a trick
2 (a) to FIG.
(E) or FIG. 5 (a) ~ (e) configuration and process
Organic compound layer or conductive organic compound layer and metal layer (C
r and Au) were formed. Next, the organic compound layer or
Is the second group so as to be paired with the conductive organic compound layer and the metal layer.
100 bonding layers are formed on the board, and the first substrate is organized.
Compound layer or conductive organic compound layer and metal layer and second substrate
Example 1 The upper bonding layer was aligned to face and contact.
Alternatively, pressure bonding and peeling are performed in the same manner as in Example 5, and the second substrate
100 microprobes were formed on the bonding layer (FIG. 10).
The pitch of the microprobes was 200 μm. The plurality of microprobes manufactured in this way are taken by SEM.
When observed with, the tips of all microprobes are made of silicon.
Shape of inverted pyramid formed by crystal axis anisotropic etching
It has a replica shape, and the tip is sharply formed.
The radius of curvature of the tip of each microprobe is 0.03 μm ± 0.0
It was within the variation of 1 μm. Also, connect each probe.
The height variation from the ply layer is within ± 0.1 μm
Was. When the method for producing a microprobe of the present invention is used,
It was found that a microprobe with a uniform shape could be obtained. According to the present invention, the microprobe is constructed as described above.
By doing so, it is possible to reduce the weight of the microprobe,
It is possible to improve the resonance frequency of the cantilever.
In addition, it improves the water repellency of the surface of the microprobe,
It is possible to reduce the influence of water. In addition, the present invention
In, the probe material is formed in the female mold as described above, and
Of the probe material by transferring the
The range of choice can be expanded. Further, in the present invention,
It is necessary to etch the probe material layer in the manufacturing process.
Since it is not necessary, it is possible to simplify the manufacturing process.
In addition, the first substrate with the concave portion formed, that is, the small tip
The female mold can be used repeatedly, improving productivity and manufacturing
The cost can be reduced and the etching solution
Material deterioration of the small probe, deterioration of shape, and
It is possible to form a fine probe without contamination. Ma
The present invention also provides a thin film cantilever having a bonding layer on the second substrate.
By forming the lever in advance,
A probe consisting of thin film cantilevers
Can be made easier, and only the microprobe cantilever tip
Since it can be formed on the bonding layer, it reflects the bonding layer
Can be used as a film, and a reflective film can be used on the entire back surface
Since it is not necessary to form it on the
It is possible to provide a probe without warping of thin film cantilevers.
Can be. Furthermore, the present invention is reproducible as a microprobe.
Good and uniform shape can be obtained, and the tip can be formed sharply.
Of the probe that makes it easy to use multiple probes
Provided are a manufacturing method and an information processing apparatus using them.
Can be.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a probe in Example 1 of the present invention. FIG. 2 is a diagram showing a method of manufacturing a probe according to the first embodiment of the present invention. FIG. 3A using the probe in Example 1 of the present invention
It is a block diagram of FM apparatus. FIG. 4 is a diagram showing a probe in Example 3 of the present invention. FIG. 5 is a diagram showing a method of manufacturing a micro probe according to the fifth embodiment of the present invention. [FIG. 6] S using a microprobe in Example 5 of the present invention
It is a block diagram of a TM apparatus. FIG. 7 is a diagram showing a method of manufacturing a probe according to a sixth embodiment of the present invention. FIG. 8 is a block diagram of an information processing device using a probe according to a sixth embodiment of the present invention. FIG. 9 is a diagram showing a probe in Example 7 of the present invention. FIG. 10 is a diagram showing an example in which a plurality of microprobes are formed in Example 8 of the present invention. FIG. 11 is a diagram showing a conventional microprobe. FIG. 12 is a diagram showing a conventional microprobe. [Explanation of reference numerals] 1 first substrate 2 protective layer 3 recess 4 peeling layer 5 microprobe 6 metal layer 7 bonding layer 8 second substrate 9 elastic body (cantilever) 10 extraction electrode 11 sample 12 tunnel current amplification circuit 13 silicon dioxide 14 Silicon Nitride 15 XYZ Axis Drive Piezo Element 48 Bonding Layer 50 Microprobe 51 Thin Film Cantilever 54 Silicon Block 61 Laser Light 62 Lens 63 Position Sensor 64 Sample (Recording Medium) 65 XYZ Axis Drive Piezo Element 66 Displacement Detection Circuit 67 XYZ Drive Driver 68 Voltage application circuit 69 Current detection circuit 70 Bias voltage application circuit 101 Organic compound layer 101 'Conductive organic compound layer 102 Si substrate 103 Si oxide film 104 Single crystal film 105 SiN film 201 Substrate 202 Thin film layer 203 Probe 204 Substrate 205 Resist 206 Open resist Part 207 conductive material 208 probe 510, 512, silicon dioxide 514 silicon wafer 518 pits 520, 521 silicon 522 pyramidal pit 532 Cr layer 534 nitride Soukatto 540 Mounting block 542 metal film

Claims (1)

Claim: What is claimed is: 1. A microprobe for detecting a microforce, which is installed on a substrate via a bonding layer, wherein the microprobe is formed of an organic compound layer. And a small probe. 2. The microprobe according to claim 1, wherein the microprobe formed of the organic compound layer is provided on the substrate via a metal layer. 3. The microprobe according to claim 1, wherein the organic compound layer is made of a fluorine compound. 4. The microprobe according to claim 1, wherein the organic compound layer is made of a polyimide compound. 5. A microprobe for detecting a tunnel current or a microforce, which is installed on a substrate via a bonding layer, wherein the microprobe is formed of a conductive organic compound layer. And a small probe. 6. The microprobe according to claim 5, wherein the microprobe formed of the conductive organic compound layer is installed on the substrate via a metal layer. 7. The microprobe according to claim 5, wherein the conductive organic compound layer comprises a charge transfer complex. 8. The microprobe according to claim 5, wherein the conductive organic compound layer is made of a conductive polymer. 9. The microprobe according to claim 5, wherein the conductive organic compound layer comprises a conductive resin layer in which a conductive substance is mixed with a thermosetting resin. 10. The resistance value between the microprobe and the extraction electrode of the microprobe is 1 to 100 M in the microprobe.
The microprobe according to any one of claims 5 to 9, which is Ω. 11. The microprobe according to any one of claims 1 to 10, wherein the microprobe has a hollow region surrounded by the bonding layer. Probe. 12. A probe having the microprobe according to claim 1, wherein the microprobe is attached to a free end of a thin film cantilever having one end fixed to a substrate. A probe comprising a needle bonded by pressure through a bonding layer. 13. The probe according to claim 12, wherein the bonding layer constitutes an optical reflection film when detecting the flexural displacement of the probe used for detecting a small force. 14. A method of manufacturing a microprobe for detecting a microforce, the step of forming a recess on the surface of a first substrate, and the step of forming a release layer on the substrate including the recess of the first substrate. A step of coating an organic compound layer as a microprobe layer on the release layer of the first substrate; a step of forming a bonding layer on the second substrate; and a step of forming the organic compound layer on the release layer of the first substrate. ,
Bonding to the bonding layer on the second substrate, and peeling at the interface between the peeling layer on the first substrate and the organic compound layer, and transferring the organic compound layer to the bonding layer on the second substrate. A method for manufacturing a microprobe, comprising: 15. The step of coating the organic compound layer,
And a step of coating a metal layer on the organic compound layer after coating the organic compound layer on the release layer of the first substrate, and
15. The step of transferring the organic compound layer to the bonding layer includes the step of transferring the organic compound layer to the bonding layer via a metal layer on the organic compound layer. A method for manufacturing the described microprobe. 16. A method of manufacturing a probe comprising a fine probe for detecting a small force and a thin film cantilever, the step of forming a recess on the surface of a first substrate, and a release layer on the substrate including the recess of the first substrate. A step of forming a thin film cantilever on the second substrate, a step of forming a thin film cantilever on the peeling layer of the first substrate, a step of forming a thin film cantilever on the second substrate, and a bonding layer on the tip of the thin film cantilever. And a step of joining the organic compound layer on the release layer in the recess of the first substrate to a bonding layer on the tip of the thin film cantilever, and a step of forming the release layer and the organic compound layer on the first substrate. Peeling at the interface and transferring the organic compound layer to the bonding layer on the tip of the thin film cantilever; and the thin film cantilever having one end fixed to the second substrate. Method of manufacturing a probe for and a step of removing a portion of the cantilever lower portion of the second substrate, at least. 17. The step of coating the organic compound layer,
And a step of coating a metal layer on the organic compound layer after coating the organic compound layer on the release layer of the first substrate, and
19. The step of transferring the organic compound layer to the bonding layer includes the step of transferring the organic compound layer to the bonding layer via a metal layer on the organic compound layer. A method for producing the described probe. 18. The method of manufacturing a microprobe according to claim 14 or the method of manufacturing a probe according to claims 16 to 17, wherein the step of coating the organic compound layer is a step of coating and curing the organic compound layer. A method for manufacturing a microprobe or a probe, which comprises: 19. The method of manufacturing a microprobe according to any one of claims 14 to 15 or the method of manufacturing a probe according to any of claims 16 to 17, wherein the first substrate is a single crystal silicon substrate, A method of manufacturing a microprobe or probe, comprising forming a recess on the surface of a first substrate. 20. A method of manufacturing a micro probe for detecting a tunnel current or a micro force, the step of forming a recess on the surface of a first substrate, and the step of forming a release layer on the substrate including the recess of the first substrate. A step of covering the release layer of the first substrate with a conductive organic compound layer as a microprobe layer, a step of forming a bonding layer on the second substrate, and a step of forming the release layer on the first substrate. Bonding the conductive organic compound layer to the bonding layer of the second substrate, and peeling at the interface between the peeling layer on the first substrate and the conductive organic compound layer, and bonding on the second substrate. And a step of transferring the conductive organic compound layer to a layer. 21. The step of coating the conductive organic compound layer comprises the step of coating the conductive organic compound layer with a metal layer after coating the release organic layer of the first substrate with the conductive organic compound layer. In addition, the step of transferring the conductive organic compound layer to the bonding layer includes the step of transferring the conductive organic compound layer to the bonding layer via a metal layer on the conductive organic compound layer. 21. The method for manufacturing a microprobe according to claim 20, wherein: 22. A method of manufacturing a probe including a fine probe for detecting a tunnel current or a small force and a thin film cantilever, the step of forming a recess on the surface of the first substrate, and the substrate including the recess of the first substrate. A step of forming a release layer thereon, a step of coating the release layer of the first substrate with a conductive organic compound layer as a microprobe layer, a step of forming a thin film cantilever on a second substrate, and the thin film A step of forming a bonding layer on the tip of the cantilever; a step of bonding the conductive organic compound layer on the release layer in the recess of the first substrate to a bonding layer on the tip of the thin film cantilever; Peeling at the interface between the peeling layer and the conductive organic compound layer, and transferring the conductive organic compound layer to the bonding layer on the tip of the thin film cantilever, End The method for producing a probe and having at least and a step of removing a portion of the second substrate of the thin film cantilever lower to be secured to the second substrate. 23. The step of coating the conductive organic compound layer comprises the step of coating the conductive organic compound layer on the release layer of the first substrate and then coating the conductive organic compound layer with a metal layer. In addition, the step of transferring the conductive organic compound layer to the bonding layer includes the step of transferring the conductive organic compound layer to the bonding layer via a metal layer on the conductive organic compound layer. 23. The method for manufacturing a probe according to claim 22, wherein: 24. The method of manufacturing a microprobe according to any one of claims 20 to 21 or the method of manufacturing a probe according to any one of claims 22 to 23, wherein the step of coating the conductive organic compound layer coats the conductive organic compound layer. A method of manufacturing a microprobe or probe, which comprises a curing step. 25. The method of manufacturing a microprobe according to any one of claims 20 to 21 or the method of manufacturing a probe according to any one of claims 22 to 23, wherein the first substrate is a single crystal silicon substrate, A method of manufacturing a microprobe or probe, comprising forming a recess on the surface of a first substrate. 26. The method according to claim 22, wherein the second substrate is a single crystal Si substrate, an insulating layer formed on the substrate, and a single crystal Si layer formed on the insulating layer. Item 24. A method for producing a probe according to Item 23. [Item 27] The electric resistance of the single crystal Si layer is 0.
27. The method for manufacturing a probe according to claim 26, which is 0 lΩ · cm or less. 28. A microprobe or probe according to any one of claims 1 to 27 is provided, and information is recorded and / or reproduced on a recording medium via the microprobe or probe. A characteristic information processing device. 29. The information processing apparatus deforms an elastic member supporting a probe by a force acting between a probe and a recording medium, and corrects a gap variation between the probe and the recording medium to thereby obtain an interval between the probe and the recording medium. 29, and reproducing is performed by detecting the current between the probe and the recording medium in the controlled state.
An information processing apparatus according to claim 1.