JPH0912974A - Silicone - Google Patents
SiliconeInfo
- Publication number
- JPH0912974A JPH0912974A JP16731695A JP16731695A JPH0912974A JP H0912974 A JPH0912974 A JP H0912974A JP 16731695 A JP16731695 A JP 16731695A JP 16731695 A JP16731695 A JP 16731695A JP H0912974 A JPH0912974 A JP H0912974A
- Authority
- JP
- Japan
- Prior art keywords
- silicone
- agent
- semiconductor device
- silicone rubber
- gas barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Paints Or Removers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体装置の表面保護
用シリコーンコーティングに使用されるシリコーンに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to silicone used for silicone coating for surface protection of semiconductor devices.
【０００２】[0002]
【従来の技術】電子部品は外界からのガスやゴミ等の付
着による特性劣化を防止し、機械的な応力を緩和するた
めにシリコーンコーティングが施される。シリコーンコ
ーティングにはシリコーンゴムやシリコーンゲルが使用
される。これらはそれぞれ単独で使用され、シリコーン
ゴムはガスバリア性と基板との密着性に特徴があり、シ
リコーンゲルは低硬度，低弾性といった特徴がある。2. Description of the Related Art Electronic parts are coated with silicone in order to prevent characteristic deterioration due to adhesion of gas and dust from the outside and to relieve mechanical stress. Silicone rubber or silicone gel is used for the silicone coating. These are used alone, silicone rubber is characterized by gas barrier properties and adhesion to substrates, and silicone gel is characterized by low hardness and elasticity.
【０００３】[0003]
【発明が解決しようとする課題】シリコーンゴムを使用
する場合においては、ガスバリア性と基板との密着性は
良好であるが、応力緩和性に乏しいため、例えばワイヤ
ボンディングのネック部分を被覆する場合においては使
用環境温度の変化による熱応力のためネック部分にクラ
ックが発生し、断線を生じるという問題がある。When silicone rubber is used, the gas barrier property and the adhesion to the substrate are good, but the stress relaxation property is poor. For example, when the neck portion of wire bonding is covered. Has a problem that cracks occur at the neck portion due to thermal stress due to changes in the operating environment temperature, resulting in disconnection.
【０００４】またシリコーンゲルを使用する場合におい
ては、防塵や機械的応力の緩和といった目的は達成でき
るが、ガス透過性が大きくまた基板との密着性が悪いた
めに水分や腐食性ガスの透過あるいは界面からの侵入に
より電子部品の金属部分（アルミパッド，アルミ配線）
に腐食が発生し、基板とシリコーンコーティングとの界
面に発生した熱応力により剥離が生ずるという問題があ
った。When silicone gel is used, the objectives such as dustproofing and relaxation of mechanical stress can be achieved, but the gas permeability is large and the adhesion to the substrate is poor, so that moisture or corrosive gas can be transmitted or Metal parts of electronic parts (aluminum pad, aluminum wiring) due to intrusion from the interface
However, there is a problem in that corrosion is generated on the substrate and the peeling occurs due to the thermal stress generated at the interface between the substrate and the silicone coating.
【０００５】この発明は上述の点に鑑みてなされその目
的は、分子構造の改造により、ガスバリア性と基板との
密着性、および低硬度と低弾性の両性質を合わせ持つシ
リコーンを提供し、電子機器の信頼性を高めることにあ
る。The present invention has been made in view of the above points, and an object thereof is to provide a silicone having both gas barrier properties and adhesion to a substrate and low hardness and low elasticity by modifying a molecular structure. It is to improve the reliability of the equipment.
【０００６】[0006]
【課題を解決するための手段】上述の目的はこの発明に
よれば、シリコーンゴム剤とシリコーンゲル剤の両者を
液相配合し、次いで熱硬化処理して得られるシリコーン
とすることにより達成される。According to the present invention, the above-mentioned object is achieved by blending both a silicone rubber agent and a silicone gel agent in a liquid phase, and then thermosetting the resulting silicone. .
【０００７】[0007]
【作用】シリコーンゴム剤はオリゴマであり熱処理によ
り重合硬化してシリコーンゴムとなる。またシリコーン
ゲル剤はオリゴマであり熱処理により重合硬化してシリ
コーンゲルとなる。このようなシリコーンゴム剤と、シ
リコーンゲル剤を液相配合して熱処理すると、分子中で
二種類のオリゴマが共重合したシリコーンが得られる。
シリコーンゴム剤のオリゴマ成分からは共重合シリコー
ンのガスバリア性と基板密着性が生じ、シリコーンゲル
剤のオリゴマ成分からは低硬度と低弾性の性質が生じ
る。[Function] The silicone rubber agent is an oligomer, which is polymerized and cured by heat treatment to become a silicone rubber. The silicone gel agent is an oligomer, which is polymerized and cured by heat treatment to form a silicone gel. When such a silicone rubber agent and a silicone gel agent are mixed in a liquid phase and heat-treated, a silicone in which two kinds of oligomers are copolymerized in the molecule is obtained.
The oligomeric component of the silicone rubber agent causes gas barrier properties and substrate adhesion of the copolymerized silicone, and the oligomeric component of the silicone gel agent causes low hardness and low elasticity.
【０００８】[0008]
実施例１ 図１はこの発明の実施例に係るシリコーンコーティング
を有する半導体装置を示し、図（ａ）は断面図、図
（ｂ）は要部斜視図である。パッケージ１の内部に半導
体チップ３がスペーサ２を介して載置される。ワイヤ４
が半導体チップ３とリードフレーム５を電気的に接続す
る。シリコーンコーティング６が半導体チップ３を被覆
して保護する。Embodiment 1 FIGS. 1A and 1B show a semiconductor device having a silicone coating according to an embodiment of the present invention. FIG. 1A is a sectional view and FIG. A semiconductor chip 3 is placed inside the package 1 via a spacer 2. Wire 4
Electrically connects the semiconductor chip 3 and the lead frame 5. The silicone coating 6 covers and protects the semiconductor chip 3.
【０００９】直径が２０μｍのワイヤ４を使用してワイ
ヤボンディングを行った半導体装置の表面に、シリコー
ンゴム剤（商品名：ＴＳＥ３２５０，東芝シリコーン
（株））９３重量部とシリコーンゲル剤（商品名：ＴＳ
Ｅ３０５１，東芝シリコーン（株））７重量部を配合し
たコーティング剤を塗布し、１２０℃で１ｈ加熱して硬
化させた。93 parts by weight of a silicone rubber agent (trade name: TSE3250, Toshiba Silicone Co., Ltd.) and a silicone gel agent (trade name: TS
A coating agent containing 7 parts by weight of E3051, Toshiba Silicone Co., Ltd. was applied and cured by heating at 120 ° C. for 1 hour.
【００１０】得られたシリコーンコーティング６の硬度
はＪＩＳＡ―５、膜厚のばらつきは２７％であった。得
られた半導体装置につきプレッシャクッカテストを温度
１２０℃、湿度１００％、圧力２気圧、１００ｈの条件
で行った。プレッシャクッカテスト後のアルミパッドの
腐食発生率が０％であった。The hardness of the obtained silicone coating 6 was JISA-5 and the variation of the film thickness was 27%. A pressure cooker test was performed on the obtained semiconductor device under the conditions of a temperature of 120 ° C., a humidity of 100%, a pressure of 2 atm and a time of 100 hours. The corrosion occurrence rate of the aluminum pad after the pressure cooker test was 0%.
【００１１】シリコーンコーティングした半導体装置に
対して−４０℃から１３０℃の温度範囲で３００サイク
ルの熱衝撃試験を行った。熱衝撃試験後のワイヤボンデ
ィングのクラック発生率は０％であった。シリコーンコ
ーティング６の半導体チップからの剥離は観察されなか
った。 実施例２ 直径が２０μｍのワイヤを使用してワイヤボンディグを
行った半導体装置の表面に、シリコーンゴム剤（商品
名：ＴＳＥ３２５０，東芝シリコーン（株））９５重量
部とシリコーンゲル剤（商品名：ＴＳＥ３０５１，東芝
シリコーン（株））５重量部を配合したコーティング剤
を塗布し、１２０℃で１ｈ加熱して硬化させた。The silicon-coated semiconductor device was subjected to a 300-cycle thermal shock test in the temperature range of -40 ° C to 130 ° C. The crack occurrence rate of wire bonding after the thermal shock test was 0%. No peeling of the silicone coating 6 from the semiconductor chip was observed. Example 2 95 parts by weight of a silicone rubber agent (trade name: TSE3250, Toshiba Silicone Co., Ltd.) and a silicone gel agent (trade name: A coating agent containing 5 parts by weight of TSE3051, Toshiba Silicone Co., Ltd. was applied and cured by heating at 120 ° C. for 1 hour.
【００１２】得られたシリコーンコーティング６の硬度
はＪＩＳＡ―７、膜厚のばらつきは３２％であった。得
られた半導体装置につきプレッシャクッカテストを温度
１２０℃、湿度１００％、圧力２気圧、１００ｈの条件
で行った。プレッシャクッカテスト後のアルミパッドの
腐食発生率が０％であった。The hardness of the obtained silicone coating 6 was JISA-7, and the variation in the film thickness was 32%. A pressure cooker test was performed on the obtained semiconductor device under the conditions of a temperature of 120 ° C., a humidity of 100%, a pressure of 2 atm and a time of 100 hours. The corrosion occurrence rate of the aluminum pad after the pressure cooker test was 0%.
【００１３】シリコーンコーティングした半導体装置に
対して−４０℃から１３０℃の温度範囲で３００サイク
ルの熱衝撃試験を行った。熱衝撃試験後のワイヤボンデ
ィングのクラック発生率は１６％であった。シリコーン
コーティング６の半導体チップからの剥離は観察されな
かった。 実施例３ 直径が２０μｍのワイヤを使用してワイヤボンディグを
行った半導体装置の表面に、シリコーンゴム剤（商品
名：ＴＳＥ３２５０，東芝シリコーン（株））９０重量
部とシリコーンゲル剤（商品名：ＴＳＥ３０５１，東芝
シリコーン（株））１０重量部を配合したコーティング
剤を塗布し、１２０℃で１ｈ加熱して硬化させた。The silicon-coated semiconductor device was subjected to a 300-cycle thermal shock test in the temperature range of -40 ° C to 130 ° C. The rate of crack occurrence in wire bonding after the thermal shock test was 16%. No peeling of the silicone coating 6 from the semiconductor chip was observed. Example 3 90 parts by weight of a silicone rubber agent (trade name: TSE3250, Toshiba Silicone Co., Ltd.) and a silicone gel agent (trade name: A coating agent containing 10 parts by weight of TSE3051, Toshiba Silicone Co., Ltd. was applied and cured by heating at 120 ° C. for 1 hour.
【００１４】シリコーンコーティング６の硬度はＪＩＳ
Ａ―４であり、また膜厚のばらつきは２０％で良好であ
った。シリコーンコーティングした半導体装置に対して
−４０℃から１３０℃の温度範囲で３００サイクルの熱
衝撃試験を行った。熱衝撃試験後のワイヤボンディング
のクラック発生率は０％であった。The hardness of the silicone coating 6 is JIS
It was A-4, and the variation in the film thickness was 20%, which was good. A 300-cycle thermal shock test was performed on the silicone-coated semiconductor device in the temperature range of −40 ° C. to 130 ° C. The crack occurrence rate of wire bonding after the thermal shock test was 0%.
【００１５】得られた半導体装置につきプレッシャクッ
カテストを温度１２０℃、湿度１００％、圧力２気圧、
１００ｈの条件で行った。プレッシャクッカテスト後の
アルミパッドの腐食の発生率は１７％であった。シリコ
ーンコーティング６の半導体チップからの剥離は観察さ
れなかった。 比較例１ 直径が２０μｍのワイヤを使用してワイヤボンディグを
行った半導体装置の表面に、シリコーンゴム剤（商品
名：ＴＳＥ３２５０，東芝シリコーン（株））の単体を
塗布して熱処理した。A pressure cooker test was performed on the obtained semiconductor device at a temperature of 120 ° C., a humidity of 100%, a pressure of 2 atm.
It was carried out under the condition of 100 h. The incidence of corrosion of the aluminum pad after the pressure cooker test was 17%. No peeling of the silicone coating 6 from the semiconductor chip was observed. Comparative Example 1 A simple substance of a silicone rubber agent (trade name: TSE3250, Toshiba Silicone Co., Ltd.) was applied to the surface of a semiconductor device which was wire-bonded using a wire having a diameter of 20 μm and heat-treated.
【００１６】得られたシリコーンコーティング６の硬度
はＪＩＳＡ―９で高く、また膜厚のばらつきは７０％で
あった。半導体装置に対して−４０℃から１３０℃の温
度範囲で３００サイクルの熱衝撃試験を行った。熱衝撃
試験後のワイヤボンディングのクラック発生率は１００
％であった。The hardness of the obtained silicone coating 6 was high in JIS A-9, and the variation in the film thickness was 70%. A thermal shock test of 300 cycles was performed on the semiconductor device in the temperature range of −40 ° C. to 130 ° C. The crack occurrence rate of wire bonding after the thermal shock test is 100.
%Met.
【００１７】プレッシャクッカテスト後のアルミパッド
の腐食の発生率は０％であった。 比較例２ 直径が２０μｍのワイヤを使用してワイヤボンディグを
行った半導体装置の表面に、シリコーンゲル剤（商品
名：ＴＳＥ３０５１，東芝シリコーン（株））の単体を
塗布して熱処理した。After the pressure cooker test, the corrosion rate of the aluminum pad was 0%. Comparative Example 2 A single body of a silicone gel agent (trade name: TSE3051, Toshiba Silicone Co., Ltd.) was applied to the surface of a semiconductor device which was wire-bonded using a wire having a diameter of 20 μm and heat-treated.
【００１８】得られた半導体装置につきプレッシャクッ
カテストを温度１２０℃、湿度１００％、圧力２気圧、
１００ｈの条件で行った。プレッシャクッカテスト後の
アルミパッドの腐食の発生率が６３％であった。またコ
ーティングが基板から剥離している状況が観察された。
熱衝撃試験後のワイヤボンディングのクラック発生率は
０％であった。A pressure cooker test was conducted on the obtained semiconductor device at a temperature of 120 ° C., a humidity of 100%, a pressure of 2 atm.
It was carried out under the condition of 100 h. The incidence of corrosion of the aluminum pad after the pressure cooker test was 63%. It was also observed that the coating was peeling from the substrate.
The crack occurrence rate of wire bonding after the thermal shock test was 0%.
【００１９】シリコーンゴム剤（商品名：ＴＳＥ３２５
０，東芝シリコーン（株））の粘性は高くシリコーンゲ
ル剤（商品名：ＴＳＥ３０５１，東芝シリコーン
（株））の粘性は低いために両者の配合の程度により作
業性が異なり、得られたシリコーンコーティングの膜厚
に変動が生じる。シリコーンゲル剤の配合比が高い程、
膜厚の再現性は良好であり、また硬度も小さくなる。Silicone rubber agent (trade name: TSE325
No. 0, Toshiba Silicone Co., Ltd.) has a high viscosity, and the silicone gel agent (trade name: TSE3051, Toshiba Silicone Co., Ltd.) has a low viscosity. The film thickness varies. The higher the mixing ratio of the silicone gel agent,
The reproducibility of the film thickness is good and the hardness is small.
【００２０】以上の結果の主要部を以下にまとめて示
す。The main parts of the above results are summarized below.
【００２１】[0021]
【表１】 図２はこの発明の実施例に係る共重合シリコーンコーテ
ィングを有する半導体装置につき、クラック発生率
（○）と腐食発生率（×）の配合組成比依存性を示す線
図である。 シリコーンゲル剤の組成が７重量％のとき
（シリコーンゴム剤の組成が９３重量％のとき）に腐食
発生率もクラック発生率もともに０％になることを明瞭
に示している。[Table 1] FIG. 2 is a diagram showing the compounding composition ratio dependence of the crack occurrence rate (◯) and the corrosion occurrence rate (×) in the semiconductor device having the copolymerized silicone coating according to the example of the present invention. It is clearly shown that both the corrosion occurrence rate and the crack occurrence rate become 0% when the composition of the silicone gel agent is 7% by weight (when the composition of the silicone rubber agent is 93% by weight).
【００２２】[0022]
【発明の効果】この発明はシリコーンゴム剤と、シリコ
ーンゲル剤の両者を液相配合し、次いで熱硬化処理して
得られるシリコーンをその内容とするものであり、シリ
コーンゴム剤と、シリコーンゲル剤の両者を液相配合し
て熱処理すると、分子中で二種類のオリゴマが共重合し
たシリコーンが生成し、シリコーンゴム剤のオリゴマ成
分からは共重合シリコーンのガスバリア性と基板密着性
が生じ、シリコーンゲル剤のオリゴマ成分からは低硬度
と低弾性の性質が生じ、その結果ガスバリア性と基板密
着性、および低硬度と低弾性の両特性に優れるシリコー
ンが得られ表面コーティングに使用して電子機器の信頼
性を高めることができる。The present invention has as its contents the silicone obtained by liquid-phase blending both a silicone rubber agent and a silicone gel agent, and then subjecting it to a heat curing treatment. When both are mixed in the liquid phase and heat-treated, silicone is produced by copolymerizing two types of oligomers in the molecule, and the gas barrier properties and substrate adhesion of the copolymerized silicone are generated from the oligomer component of the silicone rubber agent, and the silicone gel The oligomer component of the agent produces low hardness and low elasticity properties, resulting in silicone with excellent gas barrier properties and substrate adhesion, and low hardness and low elasticity properties. You can improve your sex.
【図１】この発明の実施例に係るシリコーンコーティン
グを有する半導体装置を示し、図（ａ）は断面図、図
（ｂ）は要部斜視図1A and 1B show a semiconductor device having a silicone coating according to an embodiment of the present invention, FIG. 1A is a sectional view, and FIG.
【図２】この発明の実施例に係るシリコーンコーティン
グを有する半導体装置につき、クラック発生率（○）と
腐食発生率（×）の配合組成比依存性を示す線図FIG. 2 is a diagram showing the compounding composition ratio dependence of crack occurrence rate (◯) and corrosion occurrence rate (×) for a semiconductor device having a silicone coating according to an example of the present invention.
１ パッケージ ２ スペーサ ３ 半導体チップ ４ ワイヤ ５ リードフレーム ６ シリコーンコーティング ７ Ａｌパッド 1 Package 2 Spacer 3 Semiconductor Chip 4 Wire 5 Lead Frame 6 Silicone Coating 7 Al Pad
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/31 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H01L 23/31
Claims (1)
者を液相配合し、次いで熱硬化処理してなるシリコー
ン。1. A silicone obtained by liquid-blending both a silicone rubber agent and a silicone gel agent, and then heat-curing the mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16731695A JPH0912974A (en) | 1995-07-03 | 1995-07-03 | Silicone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16731695A JPH0912974A (en) | 1995-07-03 | 1995-07-03 | Silicone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0912974A true JPH0912974A (en) | 1997-01-14 |
Family
ID=15847496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16731695A Pending JPH0912974A (en) | 1995-07-03 | 1995-07-03 | Silicone |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0912974A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008291232A (en) * | 2007-04-23 | 2008-12-04 | Sansui Shoko:Kk | Production method of silicone gel sheet |
| JP2009267272A (en) * | 2008-04-29 | 2009-11-12 | New Japan Radio Co Ltd | Semiconductor hollow package and method of manufacturing the same |
-
1995
- 1995-07-03 JP JP16731695A patent/JPH0912974A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008291232A (en) * | 2007-04-23 | 2008-12-04 | Sansui Shoko:Kk | Production method of silicone gel sheet |
| JP2009267272A (en) * | 2008-04-29 | 2009-11-12 | New Japan Radio Co Ltd | Semiconductor hollow package and method of manufacturing the same |
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