JPH09115913A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily handle a compact semiconductor device by fixing a ball guide and a conductive ball which is guided to the ball guide on the electrode arrangement surface of a semiconductor chip via an anisotropic conductive film. SOLUTION: In a semiconductor 1, a conductive ball 6 which is supported and guided by a ball guide 5 via an anisotropic conductive film 4 is fixed on the main surface of a semiconductor chip 2, namely an electrode arrangement surface where an electrode (pad) 3 is provided. The conductive ball 6 is a metal ball with a diameter of for example 100-200μm. The ball guide 5 is formed by an insulation glass epoxy resin substrate which is for example approximately 100μm thick. A through hole 7 is provided at the ball guide 5 while the through hole 7 faces the electrode 3 of the semiconductor chip 2. The through hole 7 is in taper hole where the side of the anisotropic conductive film 4 is wide. Therefore, the conductive ball 6 enters the through hole 7 even if there is no anisotropic conductive film and is supported and guided by the ball guide 5.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art A semiconductor device has a structure in which a semiconductor chip is incorporated in a resin package, a ceramic package, or a metal cap package. In addition, lead pins electrically connected to the electrodes of the semiconductor chip respectively project from the package to the outside.

Regarding these semiconductor devices, for example,
Published by Nikkei BP "VLSI packaging technology (above)"
It is described in P105, issued May 15, 1993.

[0004]

In a conventional semiconductor device in which a semiconductor chip is sealed with a package, the package size is larger than the semiconductor chip size, and it is difficult to reduce the size.

When a semiconductor chip is directly mounted on a mounting board such as a wiring board, the mounting area can be reduced, but the semiconductor chip made of a semiconductor such as silicon is easily damaged and difficult to handle. The work becomes complicated.

An object of the present invention is to provide a small-sized semiconductor device which is easy to handle.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0008]

The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) A semiconductor device has a semiconductor chip having electrodes on its main surface, an anisotropic conductive film adhered over the entire main surface of the semiconductor chip, and electrodes corresponding to the electrodes of the semiconductor chip. A conductive ball bonded to the anisotropic conductive film; and a ball guide bonded to the anisotropic conductive film and having a through hole for guiding the conductive balls, the conductive ball and the electrode. Are electrically connected via an anisotropic conductive film. The through hole is a tapered hole that defines the position of the conductive ball.

(2) A semiconductor chip having an electrode on the main surface, an anisotropic conductive film adhered over the entire main surface of the semiconductor chip, and the anisotropic conductive film corresponding to each electrode of the semiconductor chip. A conductive ball bonded to the film; and a ball guide bonded to the anisotropic conductive film and having a through hole for guiding the conductive balls, wherein the conductive ball and the electrode are anisotropic. A method of manufacturing a semiconductor device electrically connected via a conductive film, comprising: stacking an anisotropic conductive film, conductive balls, and a ball guide for guiding the conductive balls on the main surface side of the semiconductor chip. After that, pressure is applied between the semiconductor chip and the ball guide and the anisotropic conductive film is heated to heat the semiconductor chip, the anisotropic conductive film, the conductive balls, and the balls. To integrate the wells.

According to the means (1), the semiconductor device has a structure in which the ball guide and the conductive ball guided by the ball guide are fixed to the electrode arrangement surface of the semiconductor chip through the anisotropic conductive film. Therefore, the size is reduced, and the surface of the semiconductor chip is protected by the ball guide and the anisotropic conductive film, so that the mechanical strength is increased and the handleability is improved.

According to the above-mentioned means (2), in the manufacture of the semiconductor device, the anisotropic conductive film and the conductive balls guided by the ball guide are successively stacked on the electrode arrangement surface of the semiconductor chip and heated under pressure. Since the semiconductor chip, the anisotropic conductive film, the conductive ball and the ball guide are integrated, it is possible to easily manufacture a semiconductor device which is small and has good handleability.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

In all the drawings for explaining the embodiments of the invention, components having the same function are designated by the same reference numeral, and the repeated description thereof will be omitted.

FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a sectional view, FIG. 3 is a view showing a manufacturing state of the semiconductor device of this embodiment, and FIG. 4 is a manufacturing process of the semiconductor device. It is a perspective view showing a ball guide used for.

As shown in FIGS. 1 and 2, the semiconductor device 1 of the present embodiment has a main surface of the semiconductor chip 2, that is, A.
On the electrode arrangement surface provided with the electrode (pad) 3 composed of 1 etc.,
The structure is such that the conductive balls 6 supported and guided by the ball guide 5 via the anisotropic conductive film 4 are fixed.
The conductive balls 6 are, for example, 100 to 200 μm.
It is a metal ball with a diameter.

The ball guide 5 has, for example, a thickness of 1.
It is formed of an insulating glass epoxy resin substrate having a thickness of about 00 μm. In the ball guide 5, as shown in FIG.
A through hole 7 is provided facing the electrode 3 of the semiconductor chip 2. The through hole 7 is a taper hole that widens on the anisotropic conductive film 4 side. Therefore, the conductive ball 6 enters the through hole 7 and is supported and guided by the ball guide 5 even without the anisotropic conductive film 4.

Further, when the ball guide 5 is in the through hole 7, a part of the conductive ball 6 protrudes from the through hole 7 to the outside. This protruding portion becomes an external terminal.

The interval between the adjacent conductive balls 6 is 50 μm or more in order to prevent a short circuit from occurring.

The anisotropic conductive film 4 has a structure in which conductive particles 11 are mixed in the insulating resin film 10. Then, the electrode 3 of the semiconductor chip 2 and the anisotropic conductive film 4 between the conductive balls 6 facing the electrode 3 are crushed by the insulating resin film 10 so that the conductive particles 11 come into contact with each other. The electrodes 3 and the conductive balls 6 facing the electrodes 3 are electrically connected.

Since the ball guide 5 is provided with the through hole 7 for supporting and guiding the conductive ball 6, it is slightly larger than the semiconductor chip 2.

The semiconductor device 1 of this embodiment has a structure in which conductive balls 6 supported by a ball guide 5 are mounted on the electrode arrangement surface side of the semiconductor chip 2 via an anisotropic conductive film 4. Therefore, the size of the semiconductor device 1 becomes substantially the same as the size of the semiconductor chip 2, and the size reduction of the semiconductor device 1 can be achieved.

The semiconductor device 1 of this embodiment has a structure in which the conductive balls 6 supported by the ball guide 5 are mounted on the electrode arrangement surface side of the semiconductor chip 2 via the anisotropic conductive film 4. Therefore, since the electrode placement surface side of the semiconductor chip 2 is protected by the anisotropic conductive film 4 and the ball guide 5, the semiconductor chip 2 is less likely to be damaged,
Good handleability. This facilitates handling when mounting the semiconductor device 1.

Next, a method of manufacturing the semiconductor device 1 of this embodiment will be described.

First, the ball guide 5 as shown in FIG.
Then, as shown in FIG. 3, the conductive balls 6 are put into the through holes 7 of the ball guide 5. Then, the anisotropic conductive film 4 is stacked on the ball guide 5, and the semiconductor chip 2 is stacked on the anisotropic conductive film 4. At this time, the semiconductor chip 2 is turned upside down and the electrode 3 is directed downward.

Since the conductive balls 6 are inserted into the tapered holes (through holes 7) of the ball guide 5, the accommodation positions are constant, and the conductive balls 6 correspond to the electrodes 3 accurately.

Next, a predetermined pressure is applied between the overlapped ball guide 5 and the semiconductor chip 2 by a conventional hot press to bend the anisotropic conductive film 4, and the anisotropic conductive film 4 is heated by the semiconductor. The chip 2, the conductive balls 6 and the ball guide 5 are adhered to each other to manufacture the semiconductor device 1 as shown in FIG.

The hot press is, for example, 35 to 7
A pressure of 5 kg / cm ² is applied and a temperature of 110 to 130 ° C. is applied.

In the method of manufacturing the semiconductor device of this embodiment,
After the anisotropic conductive film 4 and the semiconductor chip 2 are sequentially stacked on the ball guide 5 containing the conductive balls 6, pressure,
Since the semiconductor device 1 can be manufactured only by heating, the manufacturing is easy.

That is, in the case of a resin package type semiconductor device, a lead frame is used in its manufacture, and wire bonding, transfer molding,
Although various steps such as lead forming and lead plating are required, these steps are not necessary in the present embodiment, and the manufacturing cost can be reduced.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say, for example, the conductive balls 6 may be plastic balls having a conductive coating formed on the surface thereof.

The anisotropic conductive film 4 is made of conductive particles 1
It may be one in which conductive fiber is inserted instead of 1.

Further, in the above-mentioned embodiment, the example in which the electrodes are arranged along the periphery of the semiconductor chip has been described, but the same can be applied to the case where the electrodes are arranged in the entire area of the semiconductor chip. In this case, if the mounting board has a multilayer wiring structure, the degree of freedom in wiring design on the mounting board is improved.
FIG. 5 is a sectional view of a semiconductor device 1 according to another embodiment of the present invention. As shown in the figure, the semiconductor device 1 includes a semiconductor chip 2 having an electrode 3 on its main surface, and an anisotropic conductive film 4 adhered over the entire main surface of the semiconductor chip 2.
Conductive balls 6 corresponding to the respective electrodes 3 of the semiconductor chip 2 and adhered to the anisotropic conductive film 4 are provided, and the conductive balls 6 and the electrodes 3 are provided through the anisotropic conductive film 4. The structure may be electrically connected.

In the manufacture of the semiconductor device 1 of this embodiment, the anisotropic conductive film 4 is laid over the entire main surface of the semiconductor chip 2 having the electrode 3 on the main surface, and each electrode 3 of the semiconductor chip 2 is stacked. Conductive balls 6 are superposed on the anisotropic conductive film 4 at positions corresponding to, the pressure is applied between the semiconductor chip 2 and the conductive balls 6, and the anisotropic conductive film 4 is heated to heat the semiconductor chip 2 And the anisotropic conductive film 4 and the conductive ball 6 are integrated, and the conductive ball 6 and the electrode 3 are electrically connected through the anisotropic conductive film 4.

In this manufacturing, the conductive balls 6 are supported by using a jig having a tapered hole like the ball guide used in the above-described embodiment, and the conductive balls 6, the anisotropic conductive film 4, the semiconductor chip. If you stack two, work will be easier.

Also in the semiconductor device 1 of this embodiment, as in the case of the semiconductor device 1 of the above embodiment, the conductive balls 6 are attached to the electrode arrangement surface side of the semiconductor chip 2 via the anisotropic conductive film 4. Due to the structure, the size of the semiconductor device 1 becomes substantially the same as the size of the semiconductor chip 2, and the miniaturization of the semiconductor device 1 can be achieved.

In the semiconductor device 1 of this embodiment, as in the case of the semiconductor device 1 of the previous embodiment, the conductive balls 6 are attached to the electrode arrangement surface side of the semiconductor chip 2 via the anisotropic conductive film 4. Because of the structure, the electrode arrangement surface side of the semiconductor chip 2 is protected by the anisotropic conductive film 4, so that the semiconductor chip 2 is less likely to be damaged and the handleability is good.

[0038]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) Since the semiconductor device has a structure in which the ball guide and the conductive ball guided by the ball guide are fixed to the electrode arrangement surface of the semiconductor chip via the anisotropic conductive film, Since the semiconductor chip surface is reduced in size and the surface of the semiconductor chip is protected by the ball guide and the anisotropic conductive film, the mechanical strength is increased, and the handling (handling) when mounting the semiconductor device is improved.

(2) In manufacturing the semiconductor device,
Anisotropic conductive film and conductive balls guided by the ball guide are sequentially stacked on the electrode arrangement surface of the semiconductor chip and pressed and heated to integrate the semiconductor chip, anisotropic conductive film, conductive balls and ball guide. Therefore, it is possible to easily manufacture a semiconductor device which is small and has good handleability.

[Brief description of the drawings]

FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor device of this embodiment.

FIG. 3 is a diagram showing a manufacturing state of the semiconductor device of the present embodiment.

FIG. 4 is a perspective view showing a ball guide used for manufacturing the semiconductor device of the present embodiment.

FIG. 5 is a sectional view of a semiconductor device according to another embodiment of the present invention.

[Explanation of symbols]

1 ... Semiconductor device, 2 ... Electrode, 3 ... Anisotropic conductive film,
4 ... Ball guide, 5 ... Conductive ball, 6 ... Conductive ball, 7 ... Through hole, 10 ... Insulating resin film, 11 ... Conductive particle.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/92 604H

Claims (5)

[Claims] 1. A semiconductor chip having an electrode on a main surface, an anisotropic conductive film adhered over the entire main surface of the semiconductor chip, and the anisotropic conductive film corresponding to each electrode of the semiconductor chip. And a conductive ball adhered to the conductive ball, wherein the conductive ball and the electrode are electrically connected via an anisotropic conductive film. 2. A semiconductor chip having an electrode on the main surface, an anisotropic conductive film adhered over the entire main surface of the semiconductor chip, and the anisotropic conductive film corresponding to each electrode of the semiconductor chip. Conductive balls adhered to the anisotropic conductive film, and a ball guide bonded to the anisotropic conductive film and having a through hole for guiding the conductive balls, wherein the conductive balls and the electrodes are anisotropically conductive. A semiconductor device, which is electrically connected through a film. 3. The semiconductor device according to claim 2, wherein the through hole is a tapered hole that defines a position of the conductive ball. 4. An anisotropic conductive film is laid over the entire main surface of a semiconductor chip having electrodes on the main surface, and conductive balls are provided on the anisotropic conductive film at positions corresponding to the respective electrodes of the semiconductor chip. Overlap, while pressing between the semiconductor chip and the conductive ball, the anisotropic conductive film is heated to integrate the semiconductor chip, the anisotropic conductive film and the conductive ball, and the conductive ball and the A method for manufacturing a semiconductor device, comprising electrically connecting electrodes through an anisotropic conductive film. 5. A semiconductor chip having an electrode on the main surface, an anisotropic conductive film adhered over the entire main surface of the semiconductor chip, and the anisotropic conductive film corresponding to each electrode of the semiconductor chip. Conductive balls adhered to the anisotropic conductive film, and a ball guide bonded to the anisotropic conductive film and having a through hole for guiding the conductive balls, wherein the conductive balls and the electrodes are anisotropically conductive. A method of manufacturing a semiconductor device electrically connected via a film, comprising: an anisotropic conductive film on the main surface side of the semiconductor chip;
After stacking a conductive ball and a ball guide for guiding the conductive ball, pressure is applied between the semiconductor chip and the ball guide, and the anisotropic conductive film is heated to heat the semiconductor chip, the anisotropic conductive film, A method of manufacturing a semiconductor device, characterized in that a conductive ball and a ball guide are integrated.