JPH09115907A - Pattern generating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To rapidly, easily, and accurately form a conductive pattern and an insulation pattern at a specific region with an ultra-fine dimension by successively spraying a gas for generating a conductive covering and a gas for generating an insulation covering onto a sample surface while applying ion beams to the sample surface. SOLUTION: Pyrene (C16 H10 ) gas for generating a conductive thin film which is formed by heating a gas source 11 is sprayed to a position where gallium ion beams on applied on a sample 5 from one of a plurality of nozzles for constituting a gas gun 9 via a needle valve 10, thus generating a conductive carbon film with a strong adhesion force at a region which is scanned by gallium ion beams. Similarly, by applying SiH4 -NH3 gas from another nozzle for constituting the gas gun 9 to the surface of the sample 5 where gallium ion beams are applied, an insulation silicon oxide film is generated at a region which is scanned by gallium ion beams.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a pattern generation method,
Particularly, by irradiating the sample surface with an ion beam, a gas that forms a conductive film and a gas that forms an insulating film are sequentially blown onto the sample surface to form a conductive pattern and an insulating pattern. The present invention relates to a pattern generation method for generating a layered form.

[0002]

2. Description of the Related Art After an element such as an LSI is manufactured, when other wiring patterns are electrically connected to each other in a manner of straddling a minute (micron-order) wiring pattern, an insulating material is placed on the straddling wiring pattern. It is desired that after forming a pattern made of a thin film, a pattern made of a conductive thin film is formed on the thin film pattern of the insulator in a manner of interlinking to make electrical connection with other wiring patterns. ing. Also,
By forming an insulating thin film pattern on a silicon substrate or a conductive thin film pattern, and further forming a conductive pattern on the insulating thin film pattern, minute elements such as capacitors and micro strip lines can be formed. In addition, it is desired to form an element such as a dielectric resonator at an arbitrary position and at an arbitrary time, or to adjust a variation in characteristics.

[0003]

However, the conventional LSI
The conductive pattern and the insulative pattern are placed at desired positions at desired positions for the above-mentioned purposes, etc., for the completed pattern once, as required, or as required after completion, such as a custom IC. There has been a problem that it is difficult to form a layer quickly and easily in a predetermined area with a dimension of the order of submicron in the order of micron, for example.

[0004]

In order to solve the above-mentioned problems, the present invention sequentially applies a gas for forming a conductive film and a gas for forming an insulating film while irradiating a sample surface with an ion beam. By adopting a means for spraying on the sample surface, it is possible to easily and quickly generate a laminate of minute conductive patterns and insulating patterns.

[0005]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a configuration diagram of an embodiment of the present invention, and FIG. 2 shows a concrete application example using the configuration of the embodiment of the present invention shown in FIG.

In the figure, 1 is a pattern generator, 2 is an ion gun, 2-1 is an ion source, 2-2 is an electrode, 3 is a deflection electrode (DEF), 4 is an objective lens, 5 is a sample, 6 is a sample. Stand,
7 is a sample moving mechanism, 8 is a detector, 9 is a gas gun for blowing assist gas, 10 is a needle valve, 11 is a gas source, 12 is a vacuum exhaust device, 13-1 and 13-3 are high voltage generators, 13-2 is an ion acceleration voltage controller, 13-4
Is a focusing control unit, 14 is a scanning control unit, 15 is a signal amplification processing unit, 16 is an irradiation position control unit, 17 is a sputtering / assist control unit, 18 is a sample position control unit, 19 is a vacuum exhaust system control unit, Reference numeral 20 denotes an assist gas control unit, 21 denotes a display, 22 denotes a keyboard, and 23 denotes a disk.

First, charged particles, for example, secondary electrons emitted from a sample irradiated with an ion beam are displayed on a display 2.
The configuration and operation when a SIM image is displayed on the LCD 1 will be described.

In FIG. 1, an ion gun 2 in the figure has an ion source 2-for a grounded electrode 2-2 having a hole on its axis.
For example, a positive high voltage tens HV ₁ is applied from a high voltage generator 13-1 to a needle type tip having a sharp tip and containing gallium, and heating is performed to the extent that liquid gallium is produced at the tip of the ion source 2-1. By doing so, a gallium ion beam is emitted. The acceleration voltage for accelerating the gallium ion beam is set by the ion acceleration voltage controller 13-2. The emitted gallium ion beam is narrowed down (imaged) on the sample 5 mounted on the sample stage 6 by the objective lens (OL) 4, and the sample is deflected by the deflection electrodes (X and Y) 3. 5 are scanned. For example, secondary electrons and the like emitted from the sample 5 are detected by the detector 8 and supplied to the signal amplification processing unit 15. At this time, the high voltage generated by the high voltage generator 13-3 based on the signal from the focusing control unit 13-4 is applied to the objective lens 4, and the gallium ion beam is narrowed down on the sample 5. To be Then, the signal supplied to the signal amplification processing unit 15 is amplified, processed, and the like.
It is displayed as an IM image. The magnification of the displayed SIM image or the like is determined by the magnitude of the scanning signal applied to the deflection electrode 3 by the scanning control unit 14. The display 21
The position of the sample 5 observed above can be determined by the sample moving mechanism 7 moving the sample table 6 in accordance with an instruction from the sample position control unit 18 or by the sample moving mechanism 7 via a manual mechanism (not shown). 6 is performed. Further, the inside of the sample chamber and the like constituting the pattern generating apparatus 1 and the area through which the gallium ion beam passes are evacuated to an ultra-high vacuum by the evacuating apparatus 12 based on an instruction from the evacuating system control unit 19.

The sample 5 is constructed by the above configuration and operation.
Can be observed, and it becomes possible to accurately determine a position necessary for laminating a conductive pattern and an insulating pattern described later.

Second, the configuration and operation when a new conductive pattern and a new insulating pattern are generated in a laminated manner will be described. As described above, the area including the pattern to be newly generated is displayed on the display 2.
The sample stage 6 is moved so as to be displayed as a SIM image on 1, and the objective lens 4 is focused. On this occasion,
The movement of the sample table 6 is performed by storing information such as the position coordinates of a pattern on the sample 5 such as an LSI in a disk 23 in advance as a database, and using the keyboard 22 to generate position information and dimensions for generating a new pattern. And the like may be performed by inputting a key to the sputter / assist control unit 17 and specifying it, or may be performed manually.

Next, the sputtering / assist control unit is operated from the keyboard 22 so that the gallium ion beam can accurately scan a region in which a new pattern is to be formed in the pattern displayed on the display 21 for a predetermined time. 1
Key in 7 By performing key input, the sputtering / assist control unit 17 causes the irradiation position control unit 1
6 is commanded. Upon receiving the command, the irradiation position control unit 16 sends a control signal to the scanning control unit 14 to apply a predetermined scanning voltage to the deflection electrode 3.

Further, in order to generate a new conductive pattern or a new insulating pattern, the sputtering / assist control unit 17 issues a command to the assist gas control unit 20 to heat the gas source 11 or the like. For example, pyrene (C ₁₆ H ₁₀ ) gas, which is a compound gas for forming a conductive thin film, is supplied through a needle valve 10 to one of a plurality of nozzles constituting a gas gun 9. To the position on the sample 5 where the gallium ion beam is irradiated. As a result, a conductive carbon film having a strong adhesive force, which is obtained by decomposing pyrene gas using the gallium ion beam, is generated in a region scanned using the gallium ion beam. Similarly, for example, S
An iH ₄ —NH ₃ gas is blown from another nozzle constituting the gas gun 9 onto the surface of the sample 5 to which the gallium ion beam is irradiated, so that insulating silicon oxide (SiO 2)
₂ ) A film will be formed in the area scanned using the gallium ion beam.

As described above, it is possible to sequentially generate a thin conductive pattern and an insulating pattern in a stacked manner. Needle valves 10 (only one is shown in the figure and others are omitted) provided for a plurality of nozzles constituting the gas gun 9 are used to connect the gas gun 9 from the respective gas sources 11. When the assist gas is not supplied to each of the plurality of nozzles, the nozzle is closed. In general, when a conductive pattern is generated, as described above, for example, the gas source 11 is heated so as to supply only pyrene gas, and the gas generated by the gas source 11 is supplied to the gas gun 9 in a predetermined manner. The gallium ion beam is sprayed from the nozzle onto the surface of the sample 5 which has been irradiated.
At this time, in order to blow gas onto the surface of the sample 5, only a predetermined number of needle valves 10, for example, only one, is controlled to be open.
The needle valve 10 can also be used to control the gas supply amount as required. Also,
A molybdenum compound gas, an aluminum compound gas, a chromium compound gas, or the like, instead of the pyrene gas, is irradiated with a gallium ion beam from a predetermined nozzle constituting the gas gun 9 as a compound gas for generating a conductive pattern. , A new conductive pattern corresponding to each conductive material can be generated with submicron size. Then, by sequentially laminating the conductive pattern and the insulating pattern in a laminating manner, the above-described elements such as the capacitor and the microstrip line can be arranged in any place at any time and in any size. Can be generated.

A conductive pattern and an insulating property will be described with reference to FIG.
For details of the operation when generating in the form of stacking
This will be described in detail. Figure 2 shows the wiring patterns that make up the LSI.
Another wiring pattern B in a state of straddling A ₁And wiring pattern
B_TwoInsulating pattern C for electrically connecting and
An example of generating the conductive pattern D will be described.

First, in order to generate an insulating pattern C shown by using a two-dot mirror line in the figure on the wiring pattern A,
As described above, the area for generating the insulating pattern C is displayed on the display 21 in FIG. Then, from the key board 22 to the grasshopper / assist control unit 1
7, key information such as region information for generating the insulating pattern C, assist gas information for designating a gas for generating the insulating pattern C, and film thickness information of the insulating pattern C is used. As a result, the sputter / assist control unit 17 issues a command to the irradiation position control unit 16 and the assist gas control unit 20 as described above, and the gallium ion beam should generate the specified insulating pattern C. For example, SiH ₄ —NH ₃ that controls a scanning signal to scan an area and generates an insulating pattern C
Control is performed so that the gas is blown to the position irradiated with the gallium ion beam. Then, by irradiating the gallium ion beam for a predetermined time, an insulating pattern C having a predetermined thickness is generated as shown by a two-dot chain line in the figure.

Secondly, the wiring pattern B is formed so as to straddle the insulating pattern C generated in the first step.
_In order to electrically connect ₁ to the wiring pattern B ₂ , a conductive pattern D as shown by the dotted line in the figure is generated. Similar to the case of the first step, the assist gas information designating the gas for generating the conductive pattern C, the film thickness information of the conductive pattern, and the like are keyed in from the keyboard 22. As a result, the subcatalyst / assist control unit 17 should issue a command to the irradiation position control unit 16 and the assist gas control unit 20 as described above, and the gallium ion beam should generate the designated conductive pattern D. The scanning signal is controlled so as to scan the area and, for example, pyrene gas, which generates the conductive pattern D, is controlled so as to be sprayed on the position where the gallium ion beam is irradiated. And gallium ion
By irradiating the beam, a conductive pattern D having a predetermined film thickness is generated as shown in the figure.

[0017] As described above, the layer is laminated on the insulating pattern C.
The conductive pattern D is produced in a manner that
By doing so, the wiring patterns of LSIs and the like that have already been completed
Easily and quickly across the turn A and sub-micro
Wiring size B ₁And wiring pattern B_TwoAnd the
It becomes possible to connect pneumatically.

Similarly, an insulating pattern is formed on a conductive pattern, and conductive patterns are sequentially laminated on the insulating pattern to form a capacitor. Submicron size can be created in any place, at any time and in any size. Further, it is also possible to easily repair various wiring patterns generated on the order of submicron, sometimes on the order of micron, or cut defective elements to exchange connection with other spare elements. For example, when repairing a wiring pattern for driving a liquid crystal panel having a dot configuration used as a display or the like, cutting a defective driving element connected to the wiring pattern, and performing connection replacement with another spare driving element, It is also possible to make an electrical connection in a manner of straddling another wiring.

[0019]

As described above, according to the present invention,
A minute conductive pattern is used because a means for sequentially irradiating the sample surface with a compound gas that forms a conductive film and a compound gas that forms an insulating film while irradiating the sample surface with an ion beam is used. It is possible to produce a structure in which the insulating pattern and the insulating pattern are laminated. Especially,
As with the wiring patterns of LSIs, etc., it becomes possible to make electrical connection between other wiring patterns across the already completed wiring patterns on the order of microns, and on the order of submicrons, and at the same time, minute capacitors. Can be created at any time, in any location, and in any size on the order of microns.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of one embodiment of the present invention.

FIG. 2 is a concrete application example using the configuration of one embodiment of the present invention shown in FIG.

[Explanation of symbols]

 1: Pattern generator 2: Ion gun 2-1: Ion source 2-2: Electrode 3: Deflection electrode (DEF) 4: Objective 5: Sample 6: Sample stage 7: Sample moving mechanism 8: Detector 9: Assist Gas gun for blowing gas 10: Needle valve 11: Gas source 12: Vacuum exhaust device 13-1, 13-3: High voltage generator 13-2: Ion acceleration voltage controller 13-4: Focusing controller 14: Scanning control unit 15: Signal amplification processing unit 16: Irradiation position control unit 17: Sputtering / assist control unit 18: Sample position control unit 19: Vacuum exhaust system control unit 20: Assist gas control unit 21: Display 22: Keyboard 23: disk

Claims (2)

[Claims] 1. An ion beam for irradiating a sample surface in a narrowed state, a scanning unit for deflecting the ion beam to scan the sample surface, and an ion beam for scanning the sample surface using the scanning unit. A charged particle detector for detecting information on charged particles emitted from the sample or absorbed by the sample, and a display device for displaying an image generated by the charged particles detected by the charged particle detector. In a device comprising: a gas spraying device configured to spray different gases from a plurality of nozzles to the sample surface being irradiated by the ion beam, respectively, if necessary, on the display device. The ion beam is applied to an area where a new conductive pattern or a new insulating pattern is to be generated based on the displayed information. A new conductive pattern and a new insulating pattern are sprayed by spraying a compound gas that decomposes using the gas spraying device to generate a conductive pattern or decomposes to generate an insulating pattern. A pattern generation method characterized in that the patterns are generated in a stacked manner. 2. An ion beam for irradiating a sample surface in a narrowed state, a scanning means for deflecting the ion beam to scan the sample surface, and an ion beam for scanning the sample surface using the scanning means. A charged particle detector for detecting information on charged particles emitted from the sample or absorbed by the sample, and a display device for displaying an image generated by the charged particles detected by the charged particle detector. An apparatus including: a gas spraying device configured to spray a desired compound gas by switching a valve with one nozzle on the sample surface irradiated with the ion beam, Based on the display information displayed on the display panel, the ion beam is added to a region where a new conductive pattern or a new insulating pattern is to be generated. A new conductive pattern and a new insulating pattern by spraying a compound gas that decomposes using the gas blowing device while irradiating A pattern generating method, wherein the pattern generating method comprises: