JPH09113578A - Semiconductor device testing board, semiconductor device testing method, contact device and testing method using this and semiconductor device testing jig - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the reliability of a projecting electrode and testing efficiency. SOLUTION: In this testing board, by loading a semiconductor device 22 in a substrate body 23 and electrically connecting a wire bump 24 to a projecting electrode 27 in this loading condition, the semiconductor device 22 is tested. The wire bump 24 is formed in an electrode structure projecting in a vertical direction against the body 23 and with the semiconductor device 22 loaded in the body 23 and by using a testing board 20 constructed such that the wire bump 24 is inserted into the projecting electrode 27 provided in the semiconductor electrode 27, the semiconductor device 22 is tested.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device test substrate, a semiconductor device test method, a contact device, a test method using the same, and a semiconductor device test jig.
In particular, the present invention relates to a semiconductor device test substrate, a semiconductor device test method, a contact device, a test method using the same, and a semiconductor device test jig that are suitable for testing a semiconductor device having a bump electrode.

In recent years, there has been a demand for higher density, higher speed, and smaller size of semiconductor devices. In order to meet these demands, a plurality of semiconductor chips (so-called bare chips) not sealed in a package are directly mounted on a circuit board. A mounting method for mounting individual pieces (for example, a multi-chip module) has been widely used.

In this mounting method, if one of the plurality of bare chips has an abnormality, the entire multi-chip module becomes a defective product, and therefore high reliability is required for each bare chip. Therefore, a test for checking whether or not each bare chip functions normally has become an important issue.

[0004]

2. Description of the Related Art Conventionally, various test methods have been proposed as a test method for a semiconductor device having a protruding electrode (hereinafter, a bare chip not resin-sealed and a resin-sealed semiconductor device are collectively referred to as a semiconductor device). Has been and is being implemented. Hereinafter, typical ones will be described.

As a test generally performed conventionally, there is a test method using a probe (test needle) (hereinafter referred to as a probe test method). In this probe test method, a plurality of probes are arranged on a test substrate so as to correspond to the protruding electrodes formed on the semiconductor device, and the tip is directly contacted with the protruding electrodes to perform the test. is there.

Further, in the test method shown in FIG. 37, the bump electrodes 2 (hereinafter, referred to as solder bumps) provided on the semiconductor device 1 are formed on the test substrate 3 and the test electrodes 4 are formed.
This is a method of conducting a test by soldering to the solder bumps 2 and electrically connecting the solder bumps 2 and the test electrodes 4 (hereinafter referred to as a mounting test method). In this method, the semiconductor device 1 is tested with the same configuration as that mounted on the test substrate 3.

The test method shown in FIG.
The semiconductor device 1 is pressed against the test electrode 4 formed on the test substrate 3 by using, and a test is performed by electrically connecting the solder bump 2 and the test electrode 4 by this press contact force (hereinafter , Called the pressure contact test method). In this pressure contact test method, the solder bumps 2 are not melted, and the solder bumps 2 and the test electrodes 4 are electrically connected by the mechanical pressure contact force of the fixing jig 5.

The fixing jig 5 is located on the pressure contact plate 6 that contacts the upper portion of the semiconductor device 1, the fixing screw 7 that inserts the pressure contact plate 6 and the test substrate 3, and the rear surface of the test substrate 3. The semiconductor device 1 is configured by a bolt 8 and the like, and the semiconductor device 1 is pressure-bonded to the test substrate 3 via the pressure contact plate 6 by screwing the fixing screw 7 onto the bolt 8.

Further, in the test method shown in FIG. 39, a conductive resin 9 is provided on the test electrode 4 formed on the test substrate 3, and the solder bump 2 and the test electrode 4 are formed by the conductive resin 9. This is a method for conducting a test by electrically connecting and (hereinafter referred to as a conductive resin test method). The conductive resin 9 has, for example, a structure in which a conductive metal powder is interposed inside a resin having elasticity, and is configured to be conductive only in the compression direction.

Further, the test method shown in FIG. 40 is applied to the semiconductor device 1 using the gold bumps 10 as bumps, and the heat shrinkable insulation is provided between the semiconductor device 1 and the test substrate 3. This is a test method in which the resin 11 is interposed (hereinafter referred to as a heat shrinkage test method). In this heat shrinkage test method, the insulating resin 11 is interposed between the semiconductor device 1 and the test substrate 3, and then heat is applied to shrink the insulating resin 11, and the shrinking force causes the semiconductor device 1 and the test substrate 3 to be tested. The substrate 3 is brought into close proximity. As a result, the gold bumps 10 are sandwiched between the semiconductor device 1 and the test substrate 3, so that the gold bumps 10 are pressed and electrically connected to the test electrodes 4.

FIG. 41 shows another conventional contactor device 110. Reference numeral 111 is a test apparatus main body, and 112 is a semiconductor chip. The contact device 110 is called a probe card, and includes a disk-shaped substrate 113, a large number of long needles 114, and tips of the electrodes 1 of the semiconductor chip 112.
The arrangement corresponds to the arrangement of 15 and is fixed diagonally and radially.

When testing the characteristics of the semiconductor chip 112, the tips of the needles 114 are brought into contact with the electrodes 115 of the semiconductor chip 112, as shown in FIG.

[0013]

However, in the probe test method described above, when the pitch of the solder bumps 2 is narrowed due to the high integration of the semiconductor element, the probe must be miniaturized accordingly. High accuracy is also required when positioning each probe. However,
There is a limit to the miniaturization and positioning accuracy of the probe, and there is a problem that it cannot be applied to the test of highly integrated semiconductor devices.

Further, in the above-mentioned mounting test method, the solder bump 2 and the test electrode 4 formed on the test substrate 3 are used.
Since soldering is performed on the solder bumps 2, it is necessary to peel off the solder bumps 2 from the test electrodes 4 after the test. Therefore, this test method has a problem that the solder bumps 2 are deteriorated because the solder bumps 2 are heated and melted twice during soldering and peeling. Furthermore, when the solder bump 2 is peeled off from the test electrode 4, impurities may be mixed in the solder bump 2 or a part of the solder bump 2 may remain on the test electrode 4, which lowers the reliability of the solder bump 2. There is a problem of doing.

Further, in the above-described pressure contact test method, a considerably large pressure contact force is required to electrically connect the individual solder bumps 2 and the test electrodes 4, so that the solder bumps 2 or the test electrodes 4 are used by this pressure contact force. There is a problem that 4 may be deformed or damaged. Furthermore, when the semiconductor device 1 has a large number of solder bumps 2 due to high integration as described above, the force for pressing the semiconductor device 1 to the test substrate 3 as a whole becomes very large, and the fixing jig 5 becomes large. There is also the problem of doing.

Further, in the above-described conductive resin test method, when the semiconductor device 1 is removed from the test substrate 3 after the test is completed, the conductive resin 9 may remain on the solder bump 2 side. When the conductive resin 9 remains on the solder bump 2 side in this way, the solder bump 2 is not mounted when the semiconductor device 1 is mounted.
When melted, the conductive resin 9 may enter into the solder, which causes a problem that the reliability of the solder bump 2 is lowered. In addition, the conductive resin 9 has a high electric resistance at the time of connection, which causes a problem that the test accuracy is lowered.

In the heat shrinkage test method described above,
When the semiconductor device 1 is removed from the test substrate 3 after the test is completed, the insulating resin 11 may remain on the semiconductor device 1 side, and the reliability of the gold bump 10 may deteriorate. Furthermore, since the insulating resin 11 is disposed on the entire surface between the semiconductor device 1 and the test substrate 3, there is a problem that the semiconductor device 1 is difficult to remove from the test substrate 3 and the workability is poor.

As described above, each of the conventional test methods has a problem that the reliability of the bump and the test efficiency are lowered. Further, in the conventional contact device 110 shown in FIG. 41, since the needle 114 is provided in an oblique direction, the length L1 of the needle 114 is as long as several tens mm. Therefore, when the signal has a high frequency, the inductance of the needle 114 increases to a non-negligible level and the test of the characteristics of the semiconductor chip 112 may be affected.

Further, since the needles 114 are in a slanting direction and have a long length, it is difficult to align the tips with high positional accuracy. Therefore, the contactor device 110 is difficult to manufacture and the product cost increases. I will end up. Further, since the needle 114 is in an oblique direction and has a long length, even if a small impact is applied to the tip, the pitch of the tip is displaced, and for some of the needles, electrodes 115 of the semiconductor chip 112 are tested.
There is a possibility that the test may not be performed because the test piece cannot be contacted with the electrode 115 by being detached from it.

The present invention has been made in view of the above points, and a semiconductor device test substrate, a semiconductor device test method, a contact device, and the like, which can improve the reliability of the protruding electrodes and the efficiency of the test. An object is to provide a test method to be used and a test jig for a semiconductor device.

[0021]

Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following various means. According to the first aspect of the present invention, the semiconductor device on which the protruding electrode is formed is mounted on the substrate main body, and the test electrode formed on the substrate main body in the mounted state is electrically connected to the protruding electrode to perform the test. In a test substrate for a semiconductor device configured to test a semiconductor device via an electrode, the test electrode has a protruding electrode structure protruding vertically upward with respect to the substrate body, and the semiconductor device is mounted on the substrate body. In this state, the test electrode is inserted into the protruding electrode provided in the semiconductor device.

According to a second aspect of the present invention, in the test substrate of the semiconductor device according to the first aspect, the test electrode has a structure in which an additive is added to a base material, and the test electrode is used at a working temperature. It is characterized in that the bump electrode does not generate an alloy or a metal compound.

Further, in the invention according to claim 3, in the test substrate of the semiconductor device according to claim 2, gold (Au) or palladium (Pd) is used as the base material. Is.

Further, in the invention of claim 4, in the test substrate of the semiconductor device of claim 1, on the surface of the base material forming the test electrode, the projection electrode and the alloy or metal compound are used at the operating temperature. It is characterized in that a coating film made of a material that does not generate is formed.

According to the invention of claim 5, in the test substrate of the semiconductor device according to claim 4, nickel (Ni) is used as the coating film. Further, the invention according to claim 6 is characterized in that, in the test substrate for a semiconductor device according to any one of claims 1 to 5, the test electrode is constituted by a wire bump.

Further, in the invention according to claim 7, in the test substrate of the semiconductor device according to any one of claims 1 to 6, a plurality of the above-mentioned test electrodes are different in projection height from the substrate body. It is characterized in that it is arranged so as to be.

Further, in the invention of claim 8, in the test substrate of the semiconductor device according to any one of claims 1 to 7, the mechanical strength of the test electrode is the mechanical strength of the protruding electrode. It is characterized in that the setting is made stronger than that.

In the invention according to claim 9, in the test substrate of the semiconductor device according to any one of claims 1 to 8, the test electrode includes a pedestal portion having a predetermined bottom area, and It is characterized in that it is constituted by a protrusion extending above the pedestal and having a cross-sectional area smaller than that of the pedestal.

According to a tenth aspect of the present invention, there is provided a semiconductor device testing method for testing a semiconductor device using the test substrate for a semiconductor device according to any one of the first to ninth aspects, which is a room temperature test method. By mounting the semiconductor device on the substrate body of the test substrate under an environment, the protruding electrode formed on the semiconductor device is loaded into the test electrode provided on the test substrate, thereby forming the protruding electrode. A semiconductor device mounting step of electrically connecting the test electrode electrically connected to the test electrode, a test step of performing a predetermined test on the semiconductor device using the test electrode connected to the protruding electrode, and a room temperature after completion of the test step. And a removal step of removing the semiconductor device from the test substrate under the environment.

According to the eleventh aspect of the present invention, in the method for testing a semiconductor device according to the tenth aspect, a wet-back step of performing a shaping process of a protruding electrode provided on the semiconductor device after the removing step is performed. Is carried out.

According to the twelfth aspect of the invention, a substrate having a large number of electrodes on its upper surface is fixed to one end of the substrate by being electrically connected to the electrodes of the substrate and standing upright with respect to the substrate. It has a large number of small wire rods that can elastically buckle when an axial force is applied, and through holes that are arranged in an array corresponding to the array of electrodes of the object to be measured. , The wire rod pieces are attached so as to project through the through hole, and the position of the plurality of wire rod pieces is regulated so that the tips of the wire rod pieces are arranged in an array corresponding to the array of the electrodes of the object to be measured. It is characterized in that the tip of the wire rod piece comes into contact with the electrode of the object to be measured, and the wire rod piece is elastically buckled.

According to the thirteenth aspect of the present invention, a substrate having a large number of electrodes on its upper surface and one end of which is electrically connected and fixed to the electrodes of the substrate and which is upright with respect to the substrate. In addition, a large number of wire rod pieces that are thin enough to elastically buckle when a force in the axial direction is applied and the wire rod pieces pass through, and the central portion in the longitudinal direction of the wire rod pieces. A sheet made of a soft material for supporting, and through holes arranged in an array corresponding to the array of the electrodes of the object to be measured,
The through hole is fitted with a portion of each of the wire rod pieces protruding above the soft sheet, and the tip end portion of the portion protruding above is soft in a state of protruding through the through hole. An upper plate member that is provided on the upper side of the sheet made of metal and positions the plurality of wire rod small pieces so that their tip portions are arranged in an array corresponding to the array of the electrodes of the measured object, and the measured object. The through holes are arranged in an array corresponding to the array of the electrodes of the object, and the through holes are made of a soft material in a state of being fitted to a portion of each of the wire rod pieces protruding below the soft sheet. A lower plate that is provided on the lower side of the sheet and that positions the portions of the wire rod pieces that project downward from the soft sheet so that they are aligned in an array corresponding to the array of the electrodes of the measured object. Consisting of members,
The tip of the wire rod piece comes into contact with the electrode of the object to be measured, and the central portion in the lengthwise direction of the wire rod piece is elastically buckled.

According to the fourteenth aspect of the present invention, a substrate having a large number of electrodes on its upper surface and one end thereof are electrically connected and fixed to the electrodes of the substrate, and are upright with respect to the substrate. It has a large number of small wire rods that can elastically buckle when an axial force is applied, and through holes that are arranged in an array corresponding to the array of electrodes of the object to be measured. , The through hole is fitted to a portion of each of the wire rod pieces, which is electrically connected to and fixed to the electrode of the substrate, near the one end, and this portion is arranged in the electrode array of the measurement object. A lower plate member that is positionally regulated so as to be aligned in a corresponding array, a support frame that is provided on the lower plate member and forms a space between the lower plate member and the upper plate member, and the object to be measured. Through holes arranged in an array corresponding to the array of the electrodes of The plurality of wire rod small pieces are provided on the upper side of the support frame in a state that the tip end portions of the portions protruding upward from the wire rod small pieces are fitted to the upper frame of the support frame. Each of which is composed of an upper plate member that positions the tip portions so that they are aligned in an array corresponding to the array of the electrodes of the object to be measured, and the tips of the wire rod pieces contact the electrodes of the object to be measured, A part of the wire rod piece extending in the space is elastically buckled.

Further, in the invention described in claim 15, a substrate having a large number of electrodes on its upper surface, one end of which is electrically connected and fixed to the electrodes of the substrate, and which is upright with respect to the substrate. It has a large number of small wire rods that can elastically buckle when an axial force is applied, and through holes that are arranged in an array corresponding to the array of electrodes of the object to be measured. , The through hole is fitted to a portion of each of the wire rod pieces, which is electrically connected to and fixed to the electrode of the substrate, near the one end, and this portion is arranged in the electrode array of the measurement object. A lower plate member that is positionally regulated so as to be aligned in a corresponding array, a support frame that is provided on the lower plate member and forms a space between the lower plate member and the upper plate member, and the object to be measured. Through holes arranged in an array corresponding to the array of the electrodes of The plurality of wire rod small pieces are provided on the upper side of the support frame in a state that the tip end portions of the portions protruding upward from the wire rod small pieces are fitted to the upper frame of the support frame. An upper plate member for regulating the position of each tip so that they are arranged in an array corresponding to the array of the electrodes of the object to be measured, and a soft material filled in the space, the tip of the wire rod small piece Is in contact with the electrode of the object to be measured, and the portion of the wire rod piece penetrating the inside of the soft material is elastically buckled.

According to the sixteenth aspect of the present invention, a substrate having a large number of electrodes on its upper surface and one end of which is electrically connected and fixed to the electrodes of the substrate and which is upright with respect to the substrate. It has a large number of small wire rods that can elastically buckle when an axial force is applied, and through holes that are arranged in an array corresponding to the array of electrodes of the object to be measured. The plurality of wire rods are provided in such a state that the through hole is fitted to a portion of each of the wire rod pieces near the upper end, and a tip portion of the portion protruding upwardly protrudes through the through hole. Each of the small pieces is composed of an upper plate member that positions the tip portions so that they are aligned in an array corresponding to the array of the electrodes of the object to be measured, and the tips of the wire rod pieces contact the electrodes of the object to be measured. , The part of the wire rod smaller than the upper plate member is elastic. It is characterized in that the manner buckled configuration.

According to a seventeenth aspect of the present invention, the contactor assembly comprises a substrate having a large number of electrodes on the upper surface and a positioning frame fixed to the upper surface, and a contactor assembly. , A soft sheet, and a large number of thin wires that penetrate through the soft sheet and are supported at the central portion in the longitudinal direction and are elastically buckled when an axial force is applied. It has a small piece and a through hole arranged in an array corresponding to the array of the electrodes of the object to be measured, and the through hole is fitted with a portion of each of the wire rod small pieces protruding above the soft sheet. And the tip portion of the portion projecting upward is provided on the upper side of the soft sheet with the tip portion penetrating the through hole and projecting, and each tip portion of the numerous wire rod pieces is the above-mentioned measured portion. Position is regulated so that it is lined up in an array corresponding to the array of electrodes of the target object. It has an upper plate member, a through hole are arranged in an array corresponding to the array of electrodes of the object to be measured,
The through-hole is fitted in a portion of each of the wire rod pieces protruding downward from the soft sheet, and the lower end portion of the portion protruding downward is soft in a state of protruding through the through-hole. The lower plate member provided on the lower side of the sheet made of a plurality of wire rods, and the lower end portion of each of the plurality of wire rod pieces is positionally regulated so as to be arranged in an array corresponding to the array of the electrodes of the object to be measured. The contactor assembly is fitted in the positioning frame, the lower end of the wire rod piece is in contact with the electrode of the substrate, and the tip of the wire rod piece is the electrode of the object to be measured. And a central portion in the lengthwise direction of the wire rod piece is elastically buckled.

Further, in the eighteenth aspect of the present invention, the contactor device according to any one of the twelfth to eighteenth aspects, a motherboard which is attached to the contactor device in a replaceable manner, and the motherboard. The test apparatus main body electrically connected to the test apparatus main body is used to perform the test.

According to the nineteenth aspect of the present invention, a plurality of connecting members, the upper ends of which are brought into contact with and electrically connected to external terminals provided on the semiconductor device to be tested, are fixed to the connecting members. A connecting member having a supporting member made of an insulating member that supports the connecting member in a standing state at a position corresponding to the disposition position of the external terminal, and an insertion hole through which the connecting member is inserted. The present invention is characterized by including a connection terminal portion electrically connected to the wiring board, and a wiring board formed with a lead wiring for drawing the connection terminal portion to the outside.

According to the twentieth aspect of the present invention, in the semiconductor device test jig according to the nineteenth aspect, any one of a glass epoxy substrate, a ceramic substrate, and a polyimide film substrate is used as a base material of the wiring board. It is characterized by being used.

The invention according to claim 21 is the test jig for a semiconductor device according to claim 19 or 20, characterized in that a plurality of the wiring boards are arranged in a laminated state. The invention according to claim 22 is characterized in that, in the test jig for a semiconductor device according to claim 21, an insulating member through which the connecting member is inserted is interposed between the plurality of wiring boards. It is a thing.

The invention according to claim 23 is the test jig for a semiconductor device according to any one of claims 19 to 22, characterized in that the support member is formed of an elastic material. . According to a twenty-fourth aspect of the invention, in the semiconductor device test jig according to any one of the nineteenth to twenty-third aspects, a portion of the connection member that protrudes from the wiring board is electrically connected to the connection terminal portion. It is characterized in that a conductive member for connecting to is disposed.

According to the invention of claim 25, in the test jig for a semiconductor device according to claim 21, as a means for electrically connecting a plurality of the wiring boards arranged in a stacked state, TAB ( It is characterized by using either the Tape Automated Bonding) method, the bump method, or the wire method.

According to a twenty-sixth aspect of the present invention, in the semiconductor device test jig according to any one of the nineteenth to twenty-fifth aspects, a mother board mounted during a test is electrically connected to the wiring board. As a means for doing so, a pin-shaped terminal is provided in the insertion hole formed in the wiring board so as to be connected to the lead-out wiring, and the pin-shaped terminal is electrically connected to the motherboard. To do.

According to the twenty-seventh aspect of the present invention, in the semiconductor device test jig according to any one of the nineteenth to twenty-fifth aspects, the mother board mounted during the test is electrically connected to the wiring board. As a means for doing so, the wiring substrate is directly electrically connected to the mother board.

Further, the invention according to claim 28 is characterized in that, in the semiconductor device test jig according to any one of claims 19 to 27, a plurality of the semiconductor devices can be arranged. It is a thing. Further, claim 29
In the above described invention, in the test jig for a semiconductor device according to any one of claims 19 to 28, the connection member,
The supporting member and the wiring board are housed in a socket, and the lid of the socket is closed to press the semiconductor device toward the connecting member.

Each of the above means operates as follows. According to the first aspect of the present invention, the test electrode having a protruding electrode structure that protrudes vertically upward with respect to the substrate body when the semiconductor device is mounted on the substrate body is a protruding electrode provided on the semiconductor device. It is charged inside. That is, in the mounted state, the test electrode is pierced inside the protruding electrode.

As described above, by inserting the test electrode inside the protruding electrode, it is possible to electrically connect the test electrode and the inside of the protruding electrode, and use mechanical pressure from the outside. Therefore, the mounting strength between the semiconductor device and the substrate body at the time of mounting can be obtained. Therefore, it is possible to prevent the test electrode and the protruding electrode from being deformed or damaged. Further, when the oxide film is formed on the surface of the bump electrode, the test electrode breaks the oxide film and connects to the bump electrode, so that the electrical connection can be surely made.

Further, when the test electrode is loaded inside the bump electrode, it is not necessary to apply heat, and the test electrode and the bump electrode can be electrically connected at room temperature.
It is possible to prevent deterioration of the protruding electrodes due to heat. Furthermore,
When electrically connecting the test electrode and the bump electrode, it is not necessary to interpose another conductive member between the test electrode and the bump electrode, and between the semiconductor device and the substrate body. The reliability of can be improved.

According to the second and third aspects of the invention, the test electrode is formed by adding the additive to the base material, so that the material forming the test electrode at the working temperature forms the protruding electrode. Since it is possible to prevent an alloy or a metal compound from being mixed with the material to be produced, it is possible to prevent deterioration of the bump electrode.

Further, according to the inventions of claims 4 and 5, a coating film made of a material which does not form an alloy or a metal compound with the protruding electrode is formed on the surface of the base material forming the test electrode. By doing so, the coating film prevents the material forming the test electrode from being mixed into the material forming the protruding electrode, and thus the deterioration of the protruding electrode can also be prevented.

According to the sixth aspect of the invention, since the test electrode is constituted by the wire bump, the height of the test electrode from the substrate body can be set arbitrarily. Moreover, since the wire bump can be formed by using a wire bonding apparatus that is widely used in the semiconductor manufacturing process, the test electrode can be formed efficiently and at low cost.

According to the seventh aspect of the invention, the test electrodes corresponding to the projecting electrodes which do not need to be tested are arranged by disposing the plurality of test electrodes with different projecting heights from the substrate body. The electrodes can be configured so that their height is reduced to prevent electrical connection, and that the test electrodes corresponding to the protruding electrodes that need to be tested are increased in height to make electrical connection. Becomes That is, the test can be selectively performed on the protruding electrode. Accordingly, it is possible to prevent the protruding electrode that does not need to be tested from being unnecessarily deformed by the test electrode.

According to the invention of claim 8, the mechanical strength of the test electrode is set to be stronger than the mechanical strength of the projecting electrode, whereby the deformation of the test electrode can be prevented, and the test electrode can be prevented from deforming. The test substrate can be reused, and it is not necessary to adjust the test electrode every time the test substrate is tested.

According to the ninth aspect of the invention, since the pedestal portion having a relatively large bottom area is connected to the substrate body, the test electrode can be firmly fixed to the substrate body. Further, since the protrusion having a smaller cross-sectional area than the pedestal is inserted into the protrusion electrode, the process of inserting the protrusion into the protrusion electrode can be performed easily and reliably.

According to the tenth aspect of the present invention, by using the semiconductor device test substrate according to any one of the first to ninth aspects, the semiconductor device mounting step is performed under a normal temperature environment (that is, protrusions). (Under environment where electrodes are not melted)
Thus, it becomes possible to insert the protruding electrode formed on the semiconductor device into the test electrode provided on the test substrate to electrically connect the protruding electrode and the test electrode. Also, the semiconductor device can be removed from the test substrate in a room temperature environment even in the removal step after the test is completed.

For this reason, impurities do not enter the protruding electrodes in the semiconductor device mounting process, and it is possible to perform a highly accurate test in the subsequent test process. Moreover, since the heat treatment is not required, the test apparatus can be simplified.

Further, in the removal process performed after the test process, the semiconductor device is configured to be mounted on the test substrate by simply inserting the test electrode into the protruding electrode, so that the semiconductor device is simply pulled out. The semiconductor device can be removed from the test substrate by operation. At this time, no heat treatment is necessary, and therefore, it is possible to prevent deterioration of the protruding electrodes.

According to the eleventh aspect of the present invention, by performing the wet-back step of shaping the protruding electrode provided on the semiconductor device after the removing step, the shaping of the protruding electrode is performed well. Can be done.

That is, the protruding electrodes formed on the semiconductor device are generally formed by plating in many cases.
Voids may be formed in the protruding electrodes during the plating process. The shape of the bump electrode in which the void is formed in this way is a deformed shape as compared with a normal bump electrode having no void. Therefore, although the wet back process is performed, it is known that the voids cannot be reliably removed by simply performing the wet back process.

However, by inserting the test electrode, a concave portion corresponding to the shape of the test electrode is formed in the protruding electrode. At this time, since the void formed on the bump electrode communicates with the recess, the void can be reliably removed by performing the wet back process in this state. Therefore, by performing the wet-back step after performing the removing step, that is, after forming the concave portion in the protruding electrode, it is possible to reliably remove the voids and perform the shaping process of the protruding electrode in a favorable manner.

According to the twelfth aspect of the invention, since the wire rod pieces are upright with respect to the substrate, the length of the wire rod pieces is short and sufficient, and the elastic buckling deformation is achieved. The elastic force generated by the action acts as a contact pressure at the tip of the wire rod piece to the electrode of the object to be measured.
Further, the arranging means acts so that the tip ends of the wire rod pieces are lined up with good positional accuracy, although it is difficult to position the tip ends of the wire rod pieces.

According to the thirteenth to seventeenth inventions,
The upper plate member acts to regulate the position of the tip of the wire rod piece. Further, the lower plate member described in claims 13, 14, 15 and 17 acts so as to regulate the portion of the wire rod piece near the lower end.

The space described in claim 14 acts so that the wire rod pieces undergo elastic buckling deformation. Further, the soft sheet according to claim 13 and the soft material according to claim 15 prevent the wire rod pieces from elastically buckling and prevent buckling-deformed parts from short-circuiting. To work.

In addition, the structure in which the positioning frame according to the seventeenth aspect is provided and the contactor assembly is fitted in the positioning frame works so as to facilitate replacement of the contactor assembly. Claims 12 to 17 described in Claim 18
The configuration in which the contactor device according to any one of the above is replaceably provided functions to increase the versatility of the test device.

According to the nineteenth aspect of the invention, the upper end portion of the wire-shaped connecting member is brought into contact with an external terminal provided on the semiconductor device to be tested to be electrically connected. Since this connecting member is in the form of a wire, it can be arranged close to each other. Therefore, the higher density makes it possible to perform a test even on a semiconductor device in which the arrangement pitch of external terminals is narrow.

Further, since the support member fixes the connection member at a position corresponding to the position of the external terminal and supports the connection member in an upright state, the connection member can be inserted all at once through the insertion holes formed in the wiring board. You can Further, since the supporting member is formed of the insulating member, the plurality of connecting members will not be short-circuited by the supporting member.

Further, since the wiring board is formed with the connection terminal portion for electrically connecting to the connection member and the lead wiring for drawing out the connection terminal portion to the outside, the electric connection with the connection member is performed by the wiring board. Can be performed by using. As described above, by electrically pulling out the connecting member using the wiring board, the lead-out structure of the connecting terminal portion can be simplified.

According to the twentieth aspect of the invention, the cost can be reduced by using the glass epoxy substrate as the base material of the wiring substrate. Further, by using a ceramic substrate or a polyimide film substrate as the base material of the wiring substrate, the arrangement pitch of the connecting members can be miniaturized.

According to the twenty-first aspect of the present invention, since a plurality of wiring boards are arranged in a laminated state, it is possible to give flexibility to the arrangement position of the lead wiring formed on the wiring board. Accordingly, the arrangement pitch of the connecting members can be narrowed. In addition, according to the invention of claim 22, since the insulating member in which the connecting member is inserted is interposed between the laminated wiring boards, the connection terminal portion and the lead wiring formed on each wiring board are provided between the respective layers. It is possible to prevent a short circuit. Moreover, since the insulating member has a function of supporting the connecting member, the mechanical strength of the connecting member can be improved.

According to the twenty-third aspect of the invention, since the supporting member is made of the elastic material, the supporting member is elastically deformed, so that the connecting members can be vertically displaced. Therefore, even if the length or the like of the connecting member varies due to dimensional error or the like, the tip of the connecting member can be reliably electrically connected to the external terminal of the semiconductor device.

According to the twenty-fourth aspect of the present invention, the conductive member electrically connected to the connection terminal portion is disposed in the portion of the connection member protruding from the wiring board, whereby the connection member and the connection terminal are connected. It is possible to reliably electrically connect the parts. Further, according to the invention of claim 25, as a means for electrically connecting a plurality of wiring boards arranged in a laminated state, any one of a TAB (Tape Automated Bonding) method, a bump method, and a wire method is used. By using it, electrical connection between the laminated wiring boards can be easily and reliably performed.

According to the twenty-sixth aspect of the present invention, a pin-shaped terminal electrically connected to the wiring board is provided as means for electrically connecting the mother board and the wiring board mounted during the test, Since the pin-shaped terminal is electrically connected to the mother board, the test jig can be connected to the mother board by using the pin-shaped terminal, so that the connection process can be easily performed.

According to the twenty-seventh aspect of the present invention, the wiring board is directly electrically connected to the mother board as means for electrically connecting the mother board and the wiring board mounted during the test. Besides, the configuration for connecting the wiring board and the mother board is unnecessary, and the wiring board and the mother board can be electrically connected with a simple structure.

According to the twenty-eighth aspect of the present invention, the test efficiency can be improved by providing a plurality of semiconductor devices. According to a twenty-ninth aspect of the invention, the connection member, the support member, and the wiring board are housed in a socket, and the lid body of the socket is closed to press the semiconductor device toward the connection member. With this configuration, the semiconductor device can be reliably positioned during the test. Therefore, it is possible to prevent a defective connection with the external terminal connection member due to the displacement of the semiconductor device.

[0075]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 shows a test substrate 20 (hereinafter referred to as a test substrate) of a semiconductor device according to an embodiment of the present invention. The figure shows the test substrate 20 in the test process. In this test process, the test substrate 20 is mounted on the burn-in test board 21, and
A semiconductor device 22, which is an object to be tested, is mounted on the upper portion of the test substrate 20.

In the following description, an example in which a bare chip-shaped semiconductor element is used as the DUT is shown. However, as the DUT, a resin-sealed semiconductor device having a protruding electrode, for example, a BGA (Ball) is used. It is also possible to apply to a semiconductor device having a Grid Array) structure. Therefore, in this specification, the semiconductor device 22 is collectively referred to as a bare chip-shaped semiconductor element and a resin-sealed semiconductor device as long as the structure has the protruding electrode.

The structure of the test substrate 20 will be described with reference to FIGS. 2 shows the test substrate 20, burn-in test board 21, semiconductor device 2 shown in FIG.
It is a figure which decomposes | disassembles and shows 2. The test substrate 20 is roughly composed of a substrate body 23, a test electrode 24, a board connecting terminal 25, and the like. The board body 23 is, for example, a multilayer printed board, and a large number of test electrodes 24 are formed on the upper surface thereof. The test electrode 24 has a wire bump structure and is made of, for example, gold (Au). Therefore, the test electrode 24 (hereinafter, referred to as a wire bump) has a structure in which the gold wire is erected above the substrate body 23.

The wire bumps 24 are formed on a wiring pattern (not shown) formed on the upper surface of the substrate main body 23, and this formation can be performed by using a wire bonding apparatus generally used in the semiconductor manufacturing process. For,
It can be formed easily and efficiently.

Further, the wire bonding apparatus is constructed so that the cutting position of the gold wire can be arbitrarily changed. Therefore, the height of the wire bumps 24 from the upper surface of the substrate body 23 can be arbitrarily controlled by controlling the wire bonding apparatus. The height can be set, and the height can be made different for each of the plurality of wire bumps 24 arranged.

Further, although FIGS. 1 and 2 are shown in a simplified manner, the actual shape of the wire bump 24 is the shape shown in FIG. Specifically, the wire bump 24
Is composed of a pedestal portion 24a having a predetermined bottom area and a protrusion 24b extending above the pedestal portion 24a. The cross-sectional area of the protruding portion 24b is set smaller than the bottom area of the pedestal portion 24a, and has a shape that can be easily inserted into the protruding electrode provided in the semiconductor device as described later. The size indicated by arrow A in the figure is approximately 40 μm.
And the dimension indicated by arrow B is about 30 μm, and the dimension indicated by arrow C is about 100 μm.

The board connecting terminal 25 is a pin-shaped electrode provided on the substrate main body 23 so as to extend to the lower portion thereof.
The upper end portion of the board connecting terminal 25 is supported by being embedded in the substrate body 23, and the upper end portion thereof is connected to the wire bumps 24 via internal wiring or surface wiring formed in the substrate body 23. It is electrically connected. Therefore, the wire bump 24 and the board connecting terminal 25
And are electrically connected to each other through the respective wirings described above.

On the other hand, the lower end of the board connection terminal 25 is
It is connected to the burn-in test board 21. The burn-in test board 21 is connected to a burn-in test device (not shown). Then, the burn-in test device supplies a predetermined signal to the semiconductor device 22 as the DUT via the burn-in test board 21 and the test substrate 20,
In addition, the signal generated by the semiconductor device 22 is transmitted to the test substrate 2
0, the burn-in test device checks whether the semiconductor device 22 is good or bad by receiving it via the burn-in test board 21.

A plurality of test substrates 20 can be arranged on the burn-in test board 21, and a plurality of semiconductor devices 22 can be tested at the same time. The semiconductor device 22 mounted on the test board 20 is, for example, a multi-chip module (MCM).
A plurality of protruding electrodes (bumps) 27 are formed on the lower surface of the bare chip-shaped element body 26 (the surface facing the substrate body 23). This protruding electrode 27
Is composed of solder which is an alloy of lead (Pb) and tin (Sn). Solder (Pb / Sn) is softer than gold (Au). Therefore, the mechanical strength (hardness) of the wire bump 24 made of gold (Au) is larger than the mechanical strength (hardness) of the bump electrode 27 made of solder.

Subsequently, the test substrate 2 having the above structure
A method of testing the semiconductor device 22 using 0 will be described. To perform a test on the semiconductor device 22, first, a semiconductor device mounting step of mounting the semiconductor device 22 on the test substrate 20 is performed. Prior to this semiconductor device mounting step, the test substrate 20 is mounted on the burn-in test board 21 in advance.

The positions of the wire bumps 24 formed on the test substrate 20 and the positions of the protruding electrodes 27 formed on the semiconductor device 22 are arranged to correspond to each other. Therefore, after positioning the wire bumps 24 and the protruding electrodes 27, the semiconductor device 22 is pressed toward the test substrate 20. The above process is performed in a normal temperature environment (a temperature at which the protruding electrode 27 made of solder is not melted).

As described above, the solder (Pb / Sn) forming the bump electrode 27 has a mechanical strength (hardness) smaller than that of the gold (Au) forming the wire bump 24. Therefore,
By pressing the semiconductor device 22 toward the test substrate 20, the wire bumps 24 are loaded into the protruding electrodes 27.

In this way, the wire bumps 24 are connected to the protruding electrodes 2
Since the process of charging the inside of 7 is performed in a room temperature environment,
It is not necessary to apply heat in the semiconductor device mounting process, and it is possible to prevent deterioration of the protruding electrodes 27 due to heat. Here, the state in which the wire bumps 24 are inserted into the protruding electrodes 27 means a state in which the wire bumps 24 are stuck inside the protruding electrodes 27, as shown in FIG.
3 is an enlarged view showing the wire bumps 24 and the protruding electrodes 27 in the mounted state.

As described above, by mounting the wire bumps 24 inside the protruding electrodes 27 in the semiconductor device mounting step, the wire bumps 24 and the protruding electrodes 27 can be electrically connected. When the wire bump 24 is loaded on the bump electrode 27, a slight pressing force (5 to 20 grams per bump) is required.
4 is inserted into the protruding electrode 27, the semiconductor device 22
Need not be kept pressed against the test substrate 20.

Further, the pressing force is also a value smaller than the conventional one. Specifically, taking the configuration shown in FIG. 12 as an example, in the configuration shown in FIG. 12, a pressing force of 6 to 20 grams per bump is applied.
In this embodiment, the pressing force can be reduced to 2 to 5 grams per bump.

Therefore, the wire bump 24 and the protruding electrode 1
It is possible to reliably prevent the deformation or damage of the test piece 7, and unlike the conventional configuration described with reference to FIG. 12, the fixing jig 5 is not necessary, and the structure of the test board 20 can be simplified. it can. Further, when the semiconductor device 22 is mounted on the test substrate 20, the wire bumps 24 are fitted into the protruding electrodes 27, so that the mechanical bonding force between the wire bumps 24 and the protruding electrodes 27 (especially in the lateral direction). The bonding strength of is strong. Therefore, the semiconductor device 22 does not easily come off from the test substrate 20.

Also, it is known that an oxide film is formed on the surface of the solder.
Since the wire bumps 24 break the oxide film formed on the surface of the bump electrodes 27 and connect with the bump electrodes 27 when the bumps are loaded into the bump electrodes 27, the electrical connection can be reliably performed.

Further, when electrically connecting the wire bumps 24 and the protruding electrodes 27, another conductive member is interposed between the wire bumps 24 and the protruding electrodes 27 and between the semiconductor device 22 and the substrate body 23. Because you don't have to
No other conductive member enters the protruding electrode 27,
Therefore, the reliability of the bump electrode 27 can be improved.

When the above semiconductor device mounting process is completed, the wire bumps 24 connected to the protruding electrodes 27 are subsequently formed.
A test process of performing a predetermined test on the semiconductor device 22 is performed by using. In this test process, as described above, the burn-in test apparatus supplies a predetermined signal to the semiconductor device 22 as the DUT via the burn-in test board 21 and the test substrate 20, and the semiconductor device 22 generates the signal. Signal test board 20, burn-in test board 21
The burn-in test device inspects whether the semiconductor device 22 is good or bad.

At this time, since the semiconductor device 22 is securely mounted on the test substrate 20 and the wire bumps 24 and the protruding electrodes 27 are securely electrically connected as described above, a highly accurate test is performed. (Burn-in test) can be performed. When the test process is completed, a detaching process for removing the semiconductor device 22 from the test substrate 20 is subsequently performed. FIG. 4 shows the removing process.

As shown in the figure, in the removing step, the test substrate 20 on which the semiconductor device 22 is mounted is set in the suction device 28. The adsorption device 28 is composed of a lower adsorption portion 29 and an upper adsorption portion 30 and is connected to a vacuum pump (not shown). The lower suction part 29 and the upper suction part 30 are configured to be movable in the vertical direction in the drawing.

With the suction device 28 set, the lower suction portion 29 is in contact with the vicinity of the center of the back surface of the test substrate 20, and the upper suction portion 30 is in contact with the upper surface of the semiconductor device 22. Then, a suction force of a vacuum pump is applied to each of the suction portions 29 and 30, the test substrate 20 is sucked by the lower suction portion 29, and the semiconductor device 22 is sucked by the upper suction portion 30, while each suction portion 29, 30 is sucked. Move 30 apart. By the series of operations described above, the semiconductor device 22
Are removed from the test substrate 20.

At this time, the semiconductor device 22 and the test substrate 2
0 means that the wire bumps 24 are mounted by being inserted into the protruding electrodes 27. Therefore, by separating the semiconductor device 22 from the test substrate 20 as described above, the wire bumps 24 can be easily mounted. And the protruding electrode 27 can be separated from each other. Further, this removing work can be performed in a room temperature environment, and therefore, the protruding electrode 27 is not deteriorated by heat during the removing process.

Further, when the protruding electrode 27 is separated from the wire bump 24, a part of the protruding electrode 27 is partially removed from the wire bump 24.
, Or conversely, a part of the wire bump 24 does not remain on the bump electrode 27. Therefore, the test substrate 20
Can be reused, and the work of adjusting the wire bumps 24 each time a test is performed becomes unnecessary. Further, it is possible to prevent impurities from being mixed into the bump electrode 27, and it is possible to improve reliability.

When the above removing step is completed, a wet back step is subsequently carried out. This wet back process is performed to shape the protruding electrodes 27, and is a process that has been performed in the past. In this wet back step, the protruding electrode 27 is heated and melted to improve the shape and luster of the protruding electrode 27, and when the protruding electrode 27 is formed by plating, it is formed in the protruding electrode 27 during plating. The purpose is to remove voids.

By performing this wet-back process after performing the removing process, the shaping process of the protruding electrode 27 can be favorably performed. Hereinafter, this point will be described. A plating method is known as one of the methods for forming the protruding electrodes 27. By this plating method, the protruding electrode 27
When the solder is formed, voids (voids) may be formed in the protruding electrode 27 during the solder plating process. The protrusion electrode 27 having the void formed therein has a deformed shape as compared with a normal protrusion electrode having no void.
For this reason, a wet-back step of shaping the shape of the bump electrode 27 by removing the void is performed. However, as described above, the holes are not surely removed by simply performing the wet back process.

FIG. 5A shows the protruding electrode 27 shaped into a sphere after being subjected to the plating treatment. A void 31 is generated in the protruding electrode 27A located at the right end in FIG. Even if the projection electrode 27A in which the void 31 has been generated in this way is simply subjected to a wet-back process, the void 3
1 is likely to remain.

However, by mounting the wire bumps 24 on the protruding electrodes 27 in the semiconductor device mounting process,
As shown in FIG. 5B, a concave portion 32 corresponding to the shape of the wire bump 24 is formed on the bump electrode 27. At this time, the void 31 formed in the protruding electrode 27A is not
Communicate with 2.

By performing the wet-back process with the voids 31 communicating with the recesses 32 and exposed to the outside, the voids 31 can be reliably removed.
Therefore, by performing the wet-back process after the removal process, the projection electrode 27 having a good spherical shape without the void 31 as shown in FIG.
Can be formed.

6 to 8 show a modification of the above embodiment. The configuration shown in FIG. 6 is configured such that a test is performed by directly using the wire bumps 24 on the protruding electrodes 27 formed by the plating method. Immediately after the projection electrode 27B is formed by the plating method, as shown in FIG. 6, the tip portion has a brim-like shape. For this reason, in the manufacturing process of the semiconductor device 22, a process of shaping the protruding electrode 27B having a flange-shaped tip portion into the spherical protruding electrode 27 is performed. In this shaping process, the protruding electrode 27B having a brim-shaped tip is subjected to a heating process to make it spherical by utilizing surface tension.

However, even if the protruding electrode 27B is formed into a spherical shape in the manufacturing process of the semiconductor device 22, the wire bump 2
A concave portion 32 is formed in the protruding electrode 27 that has been shaped by inserting 4 (see FIG. 5), and the protruding electrode 27 is shaped again by performing a wet back process.

The present modification aims at simplifying the manufacturing process and the testing process of the semiconductor device 22 by performing the shaping process which is performed twice for the protruding electrode 27 in the above-described embodiment once. There is. Therefore, the semiconductor device 22
Electrode 2 which was carried out before the test was carried out on
The shaping process of No. 7 is not performed, and the wire bump 24 is inserted into the protruding electrode 27B that is still formed by the plating method and the test is performed.

With the above structure, the protruding electrode 27
It is possible to reduce the number of heat treatments that are performed on the semiconductor device 22, to prevent deterioration of the protruding electrodes 27, and to simplify the manufacturing and testing processes of the semiconductor device 22. FIG. 7 shows a flat electrode 33 (hereinafter, the flat electrode 33).
I said) to show how to test.

As is well known, not only the protruding electrode 27 but also the plate electrode 33 is provided as the electrode of the semiconductor device. Also for the semiconductor device 34 provided with the flat plate-shaped electrode 33, the test substrate 2 according to the present invention is used.
It is possible to perform a test with 0.

The plate-shaped electrode 33 is formed by using the test substrate 20.
To test the semiconductor device 34 provided with the element main body 2
The dummy bumps 35 are formed in advance on the portions of the flat electrode 33 of FIG.
4 are formed at positions corresponding to the formation positions of the plate electrode 33 and the dummy bumps 35, respectively.

The wire bumps 24 are replaced by the dummy bumps 3
The height position of the wire bumps 24 is set so that the wire bumps 24 formed at the positions corresponding to the flat plate-shaped electrodes 33 come into contact with the flat plate-shaped electrodes 33 in the state of being loaded in the No.
Since the wire bumps 24 are formed using the wire bonding apparatus as described above, their height can be set arbitrarily.

With the above-described structure, the semiconductor device 22 can be securely held on the test substrate 20 by mounting the wire bumps 24 on the dummy bumps 35, and the flat plate-shaped electrode 33 having a flat plate shape is used. However, it is possible to electrically connect the wire bumps 24 and the flat plate-shaped electrodes 33.

FIG. 8 shows a method of conducting a test by selectively connecting the wire bumps 24 to a plurality of protruding electrodes 27 arranged. Although a large number of electrodes are formed in the semiconductor device 22, there are some electrodes that do not need to be tested with respect to specific electrodes such as a power electrode and a ground electrode. If the wire bumps 24 are connected to the protruding electrodes that do not require such a test, unnecessary deformation will occur in the protruding electrodes, which will lead to deterioration of the protruding electrodes.

Therefore, in the present modification, the wire bump 24
It is characterized in that the wire bumps 24 are not inserted into the protruding electrodes for which the test is unnecessary by adjusting the height of the wire bumps and adjusting the position of the wire bumps 24. Two wire bumps 24 shown in FIG.
Reference symbol A corresponds to the protruding electrode 27C that requires connection during the test, and does not require the testing.
The height from the substrate main body 23 is higher than that of the wire bumps 24B disposed opposite to each other. Further, no wire bump is provided at a position facing the protruding electrode 27E which does not require a test.

As described above, by appropriately setting the height and placement position of the wire bump 24 in accordance with the protruding electrode 27C requiring the test and the protruding electrodes 27D and 27E not requiring the test, the protruding electrode 27C requiring the test can be obtained. It is possible to selectively perform the test only on the contrary, and it is possible to prevent unnecessary deformation from occurring in the protruding electrode that does not require the test.

Here, as shown in FIG. 3, the metal relationship between the wire bumps 24 and the protruding electrodes 27 in the state where the wire bumps 24 are inserted in the protruding electrodes 27 will be considered. As described above, the wire bump 24 is gold (A
u) and the protruding electrodes 27 are soldered (Pb /
In the structure formed by Sn), even if the semiconductor device 22 is mounted on the test substrate 20 at room temperature and the wire bumps 24 are stuck inside the protruding electrodes 27, the wire bumps 24 and the protruding electrodes 27 are not separated from each other. It does not react to form alloys or metal compounds.

However, according to the experiment of the present inventor, when the burn-in is carried out with the wire bumps 24 inserted in the protruding electrodes 27 and the heat treatment is carried out to 150 ° C. (hereinafter, this temperature is referred to as operating temperature), the wire bumps Gold (Au) forming 24 is mixed in the protruding electrode 27, and the protruding electrode 2
It was found that an alloy of gold-tin (Au / Sn) was formed in No. 7. Further, when the content ratio of gold (Au) in the bump electrode 27 after the burn-in was measured, the value was 10
It was also found that the amount was 0 to 200 PPM or less, which was an extremely small amount.

As is well known, it is known that when gold-tin (Au / Sn) alloy is generated in solder (Pb / Sn), the solder becomes brittle and the mechanical strength is lowered. However,
As described above, when the amount of gold (Au) entering the protruding electrodes 27 is very small, the solder does not deteriorate, and even if the semiconductor device 22 is soldered to the mounting substrate, high mountability and reliability are achieved. Can be maintained.

However, depending on the equipment and device in which the semiconductor device 22 is used, extremely high reliability may be required for the semiconductor device 22, and in such a case, an extremely small amount of gold (Au) may be used. Even if there is, there is a case where it is disliked to be contained in the protruding electrode 27. Hereinafter, a means for preventing the material forming the wire bumps 24 from affecting the protruding electrodes 27 will be described so as to cope with the above case.

First, the first means is to use a base material (gold (A) in the above-mentioned embodiment) for forming the wire bumps 24 (test electrodes).
u)) is added with an additive so that the wire bumps 24 and the protruding electrodes 27 do not form an alloy or a metal compound at the operating temperature during burn-in.

At this time, as additives to be added to gold (Au) as a base material, silicon (Si), molybdenum (M
o), chromium (Cr), vanadium (V), iron (F)
e), nickel (Ni), manganese (Mn), etc. are considered. The base material for forming the wire bumps 24 is gold (A
u), but not limited to palladium (Pd),
Copper (Cu), Aluminum (Al), Solder (Pb / S)
n), low melting point solder (Pb / In / Au), gold-tin (Au)
/ Sn) or the like may be used.

Further, when a material other than gold (Au) is used as the base material, the additives such as silicon (Si), molybdenum (Mo), chromium (Cr),
Vanadium (V), iron (Fe), nickel (Ni), manganese (Mn), or the like may be used.

Here, each of the above materials was selected as the material of the base material for the following reason. That is, each of the above-mentioned materials has a relatively high melting point, and the melting point of the wire bump 24 is increased by adding it to the base material. Thus, the melting point of the wire bumps 24 is increased, so that the wire bumps 24 are not melted under the above-mentioned use temperature, and it is possible to prevent the material forming the wire bumps 24 from entering the protruding electrodes 27.

When the inventor conducted an experiment using palladium (Pd) as a base material, the content ratio of palladium (Pd) in the protruding electrode 27 after the burn-in was 1
The amount was 0.00 to 200 PPM or less, which was an extremely small amount. On the other hand, the above materials are selected as the wire bumps 24 for the following reasons. That is, palladium (Pd), copper (C
u) and aluminum (Al) are materials having a relatively high melting point, so that it is possible to prevent the material forming the wire bumps 24 from entering the protruding electrodes 27 for the same reason as above.

Further, the solder (Pb / Sn) and the low melting point solder (Pb / In / Au) are the same kind of material as the bump electrode 27, and even if this enters the bump electrode 27, no trouble occurs. Further, gold-tin (Au / Sn) originally contains gold (Au) which is not desired to be mixed in the protruding electrode 27, but since tin (Sn) is added, the protruding electrode 2
The amount of gold (Au) entering 7 can be almost eliminated.

By using the above-mentioned first means,
Since it is possible to prevent the material forming the wire bumps 24 from mixing with the material forming the protruding electrodes 27 at the operating temperature to form an alloy or a metal compound, deterioration of the protruding electrodes 27 can be prevented. As a second means, as shown in FIG. 10, a coating film 41 made of a material that does not form an alloy or a metal compound with the bump electrode 27 at the above-mentioned operating temperature is formed on the surface of the base material 40 on which the wire bumps 24 are formed. To form.

The coating film 41 must be made of a material that does not form an alloy or a metal compound with the projecting electrodes 27 made of solder (Pb / Sn) at the operating temperature as described above. (Sn) or nickel (Ni)
And so on. The coating film 41 can be easily formed on the surface of the base material 40 by using equipment generally used in semiconductor manufacturing processes such as sputtering.
Further, there is no problem even if the coating film 41 and the base material 40 form an alloy at the interface.

By using the above-mentioned second means, it is possible to prevent the base material 40 for forming the wire bumps 24 from being mixed with the material for forming the bump electrodes 27 at the working temperature to form an alloy or a metal compound. Protruding electrode 27
Degradation can be prevented.

Next, a second embodiment of the present invention will be described. 11, 12 and 13 show a contactor device 120 which is a second embodiment of the present invention. The test apparatus main body 135 shown in FIG. 12 is controlled by a computer, and a mother board 136 is connected to the test apparatus main body 135. The test apparatus 137 includes a contact device 120 attached to the motherboard 136 and a test apparatus body 135.

The contact device 120 includes a contact assembly 121.
And the substrate 123. The contactor assembly 121 includes a large number of small wire pieces 124 and a sheet 125 made of silicone rubber.
And two glass plates 126 and 127. The two glass plates 126 and 127 form an arranging means. Also,
The glass plate 126 constitutes the upper plate member, and the glass plate 127
Constitutes the lower plate member. Contact device 120 having the above configuration
Assembles the contactor assembly 121, and the contactor assembly 1
It is manufactured by attaching 21 to the substrate 23.

A large number of wire rod pieces 124 constitute a contactor, and are made of, for example, copper, BeCu, TiNi or the like. Further, the shape of the wire rod piece 124 is configured such that the diameter D1 is about 0.05 mm and the length L2 is about 5 mm. This large number of wire rod pieces 124
Has a plurality of electrodes 115 (shown in FIG. 14) of the semiconductor chip (semiconductor device) 112, which is the object to be measured, which penetrates the sheet 125 and has the central portion 124a in the lengthwise direction fixed to the sheet 125. Are arranged at a pitch p1 corresponding to the arrangement. Further, each wire rod piece 124 projects above and below the sheet 125. In the figure, 1
24b is a portion protruding above the seat 125, 1
Reference numeral 24c indicates a portion projecting downward from the seat 125.

The sheet 125 made of silicone rubber
Has a thickness t1 of, for example, about 4 mm. Here, the silicone rubber is soft and does not prevent the small wire rod pieces 124 from elastically buckling. Therefore, as will be described later, the longitudinal upper central portion 124a of the wire rod piece 124 elastically buckles and deforms.

Here, the length L3 of the central portion 124a in the lengthwise direction of the wire rod piece 124 is equal to the thickness t of the sheet 125.
Corresponds to 1. Further, the length L3 (thickness t1 of the sheet 125) of the central portion 124a can easily cause elastic buckling deformation of the central portion 124a when an axial force acts on the wire rod piece 124. Length, eg 4mm
There is.

In the structure in which the small number of wire rod pieces 124 penetrate the sheet 125, for example, a large number of wires are aligned and stretched, and wrapped with silicone rubber,
It is manufactured by slicing this so as to be orthogonal to the wire and then etching the sliced product to melt the silicone rubber and expose the wire. Glass plate 1
26 and 127 have a large number of through holes 128 and 129, respectively. The large number of through holes 128 and 129 have a diameter D2 slightly larger than 0.1 mm, and the arrangement and pitch p1 correspond to the arrangement of the large number of electrodes 115 of the semiconductor chip 112.
In line.

The glass plate 126 is provided on the upper side of the sheet 125 with the through hole 128 fitted to the upward protruding portion 124b of the wire rod piece 124. Upward protruding part 1
24b penetrates through hole 128, and a part thereof projects upward. Reference numeral 124d denotes a portion on the upper end side of the wire rod piece 124, which is a portion protruding above the glass plate 126. The length L4 of the portion 124d is, for example, about 0.25 mm. Further, 124e is the upper end of the wire rod piece 124 (portion 124d).

On the other hand, the glass plate 127 is provided so as to be positioned above the sheet 125 with the through hole 129 fitted to the downward protruding portion 124c of the wire rod piece 124. The downward protruding portion 124c penetrates the through hole 129 and a part thereof protrudes upward. 124f is a lower end side portion of the wire rod piece 124,
It is a portion protruding below 7. Furthermore, 124g
Is the lower end of the downward protruding portion 124c of the wire rod piece 124. The glass plates 126 and 127 are fixed to each other with the sheet 125 sandwiched between the glass plates 126 and 127, which are adhered to each other by the synthetic resin portion 130.

The substrate 123 has a size slightly larger than the sheet 125 and the glass plates 126 and 127 described above, and has a large number of electrodes 140 in the central portion of the upper surface 123a. The electrodes 140 are arranged in an array corresponding to the array of many electrodes 115 of the semiconductor chip 112 and at a pitch p1.

Further, especially on the upper surface of the substrate 123, as shown in FIG.
As shown in FIG. 5, the wiring pattern 141 radially extending outward from each electrode 140 and the electrode 142 for external connection at the tip of each wiring pattern 141 are formed. The pitch p2 of the electrodes 142 for external connection is considerably larger than the pitch p1 of the electrodes 140 described above, so that wire bonding can be easily performed.

Also, the lower end 124 of the above-mentioned wire rod piece 124 is
g is soldered to the electrode 140 on the substrate 123 with the solder 145. As a result, the contactor assembly 121 is fixed in a state of being mounted on the substrate 123, and each wire rod piece 124 is erected on the substrate 123 in a state of being electrically connected to the electrode 140. .

Here, paying attention to the structure of the contactor assembly 121, as described above, the lower end 124g of the wire rod small piece 124g.
Are aligned by the glass plate 127 and are arranged at the pitch p1. Therefore, the contactor assembly 121 is attached to the substrate 12
In the state of being placed on the substrate 3, the lower ends 124g of all the wire rod pieces 124 collectively face the electrodes 140 formed on the substrate 123. Therefore, the lower end 124g of the wire rod piece 124 and the electrode 140 on the substrate 123 can be collectively soldered, so that the soldering process can be easily and reliably performed.

Further, the upper protruding portion 124b of the wire rod piece 124 is position-regulated by the through hole 128 of the glass plate 126, and the length L3 of the portion protruding above the glass plate 126 is as short as about 4 mm. , Regardless of the pitch accuracy of the wire rod pieces 124 when the wire rod pieces 124 only penetrate the sheet 125,
The pitch of the upper end 124e is accurately set to p1.

That is, the pitch of the upper end 124e is the glass plate 1
Since the position of the contact device 120 is regulated by the through holes 128 of 26, the contact device 120 can be manufactured relatively easily as compared with the conventional device. Also, as shown in FIG.
The contact device 120 is mounted on the mother board 136 in a replaceable manner, and the external connection electrode 142 on the substrate 123 and the electrode 146 on the mother board 136 are electrically connected by a bonded wire 148. . A wiring pattern 147 extends radially from the electrode 146 to reach an electrode (not shown) for external connection formed in a portion near the periphery of the mother board 136. The mother board 136 is connected to the test apparatus main body 135 via an electrode (not shown) for external connection.

Next, a state in which the contact device 120 having the above-mentioned configuration is abutted against the semiconductor chip 112 which is the object to be measured will be described with reference to FIG. In order to perform the butting process, first, the contact device 120 and the semiconductor chip 11
2 is determined, and then the contact device 120 and the semiconductor chip 112 are brought close to each other until the distance 150 between them becomes a predetermined dimension z1. Dimension z1
Is shorter than the length L4 of the portion 124d by a dimension a.

Here, the upper ends 12 of all the wire rod pieces 124.
Since the pitch of 4e is accurately set to p1, when one contact device 120 and the semiconductor chip 112 are brought close to each other, even one wire rod piece is the electrode 115 of the semiconductor chip 112.
The upper end 12 of all the wire rod pieces 124 without coming off
4e contacts the corresponding electrode 115 of the semiconductor chip 112.

In the process of bringing the contact device 120 and the semiconductor chip 112 closer to the final position from this state, a force in the axial direction of the wire rod piece acts on the upper end 124e of each wire rod piece 124, and each wire rod piece 124 buckles. . here,
The portions of the wire rod pieces 124 that are inside the through holes 128 and 129 of the glass plates 126 and 127 are the through holes 128,
It is restrained by the inner wall of 129 and does not buckle. On the other hand, a portion of the wire rod piece 124 located between the glass plate 126 and the glass plate 127 (the central portion 1 of the length L3).
24a) is in a state in which it can be flexibly deformed because it penetrates through the silicone rubber sheet 125, and therefore buckles as indicated by reference numeral 151. The buckling is performed while compressing and expanding the silicone rubber sheet 125. The silicone rubber sheet 125 functions so that the buckled portions 151 do not come into contact with each other to cause a short circuit.

The above-mentioned dimensions z1, L3, a, etc. are
Buckling 151 of the central portion 124a of the wire rod piece 124
It is specified that the degree of does not exceed the elastic limit and stays within the elastic limit. Therefore, when the contact device 120 and the semiconductor chip 112 are close to the final position, the central portion 124a of each wire rod piece 124 buckles within the elastic limit as indicated by reference numeral 151.

When the buckling is restored to the original state,
The upper end 124e of each wire rod piece 124 presses the corresponding electrode 115 of the semiconductor chip 112 with force F by the elastic force accumulated in the wire rod piece 124. As a result, electrical connection between the wire rod pieces 124 of the contactor device 120 and the electrodes 115 of the semiconductor chip 112 can be reliably established.

Here, the upper end 124 of the wire rod piece 124 is
Since the portion near the e is in the through hole 129 of the glass plate 126, when the upper end 124e is pushed and buckled, the portion of the wire rod small piece 124 near the upper end 124e is the through hole 12.
It moves downward while being guided by 9, and the upper end 124e is displaced directly below (that is, in the Z1 direction). Therefore, the upper end 12
There is no possibility that the upper end 124e will be laterally displaced and disengaged from the electrode 115 in the process of the downward displacement of 4e.

The upper end 124e of the wire rod piece 124
Since the portion near the end is guided by the through hole 129, the elastic force stored in the wire rod piece 124, which acts when the buckling is restored, acts right above the upper end 124e (that is, in the Z2 direction). To do. This also prevents the upper end 124e from shifting laterally and coming off the electrode 115. Therefore, even if the size of the electrode 115 is small, the electrical connection between the wire rod pieces 124 of the contact device 120 and the electrodes 115 of the semiconductor chip 112 can be performed with high reliability.

As described above, the semiconductor chip 112 is connected to the test device 135 in FIG. 11 via the contact device 120, and the semiconductor chip 112 is tested by the test device 135. Here, each wire rod small piece 124 is an intermediate substrate 123.
Since it is upright with respect to the length L2 of the wire rod piece 124
Is about 5 mm, which is significantly shorter than the length L1 of the needle 114 of the conventional contact device 110. For this reason, the inductance of the wire rod piece 124 can be significantly reduced compared to the conventional one, and even when a high frequency signal is propagated to the wire rod piece 124, the influence of the inductance of the wire rod piece 124 can be ignored. can do.
Therefore, even when the semiconductor chip 112 handles a signal having a higher frequency than the conventional one, it is possible to normally perform the characteristic test.

Moreover, the length L2 of all the wire rod pieces 124
Have a short length, there is no adverse effect on the test due to the non-uniform length of the small wire pieces 124, and in this respect also, the above characteristic test can be performed accurately. FIG.
The contactor device 120A which is 3rd Example of this invention is shown. In FIG. 15, the same parts as those shown in FIG. 12 are designated by the same reference numerals and the description thereof will be omitted.

The contact device 120A according to the present embodiment is the same as the contact device 120 of the second embodiment except that the sheet 125 made of silicone rubber is removed, and a rectangular support frame 160 is replaced with two glass plates. It is sandwiched between the plates 126 and 127 and fixed so that a space 161 having a thickness t1 is formed between the glass plates 126 and 127. In this configuration, the central portion 12 in the lengthwise direction of the wire rod piece 124 is
4a is located in the space 161.

FIG. 16 shows a contact device 120A having the above structure.
3 shows a state in which the semiconductor chip 112 is pressed against the semiconductor chip 112.
When the contact device 120A is abutted against the semiconductor chip 112, the central portion 124a located in the space 161 of the wire piece 24 buckles within the elastic limit in the space 161 as indicated by reference numeral 162. Further, due to the elastic force for which the buckling is restored, the upper end 124e of each wire rod piece 124 presses the corresponding electrode 115 of the semiconductor chip 112 with the force F.

Therefore, the contact device 12 according to the third embodiment.
Even with the configuration of 0 A, the wire rod small piece 124 buckles in the space 161, and the upper end portion and the supporting portion are supported by the glass plates 126, 127, so that the contactor device 120 according to the second embodiment is provided. The same effect can be realized.

The contact device 120A shown in FIG.
It is manufactured by the manufacturing method shown in (A) to (C). First, as shown in FIG. 3A, the lower end of the wire rod piece 124 is soldered to the electrode 140 on the intermediate substrate 123 with the glass plate 127 attached to the lower side of the sheet 125 through which the wire rod piece 124 penetrates. To do. Then, the sheet 125 is pulled out and removed as shown in FIG. Finally, as shown in FIG. 7C, the contact device 120A is formed by stacking and attaching the rectangular frame-shaped support frame 160 and the glass plate 126.

Next, a fourth embodiment of the present invention will be described. FIG. 18 shows a contactor device 120 according to the fourth embodiment of the present invention.
B is shown. In FIG. 18, the same parts as those shown in FIG. 15 are designated by the same reference numerals, and the description thereof will be omitted. The contactor device 120B according to the present embodiment is different from the contactor device 120A according to the third embodiment described above in the space 161.
It is characterized in that the inside is filled with silicone rubber 170. With this configuration, when the wire rod pieces 124 buckle, the adjacent wire rod pieces 12
It is possible to reliably prevent a short circuit from occurring between the four.

Next, a fifth embodiment of the present invention will be described. FIG. 19 shows a contactor device 120 according to the fifth embodiment of the present invention.
C is shown. In FIG. 18, the same parts as those shown in FIG. 15 are designated by the same reference numerals, and the description thereof will be omitted. The contact device 120C according to the present embodiment is the third device described above.
The contact device 120A of the embodiment is characterized in that the support frame 160 having a rectangular frame shape and the lower glass plate 127 are removed, and only the upper glass plate 126 is left. In the contactor device 120C according to the present embodiment, its configuration can be extremely simplified, and an operation substantially equivalent to that of the second embodiment described above can be realized.

The sixth embodiment of the present invention will be described next. FIG. 20 shows a contactor device 1 according to a sixth embodiment of the present invention.
20D is shown. Contact device 120 according to the present embodiment
In D, the lower end 124g of the wire rod piece 124 is not soldered to the electrode 140 on the substrate 123, but is simply in contact with the electrode 140.

The contact device 120D includes a contact assembly 121 having the same structure as that shown in FIG. 11, and a substrate 123.
And the positioning frame 18 fixed on the substrate 123.
0. The frame 180 has a rectangular shape and has the same size as the contactor assembly 121.

Further, the contactor assembly 121 is fitted into the frame 180 and dropped into the frame 180. The position of the contactor assembly 121 is regulated by the frame 180, the lower end 124g of each wire rod piece 124 is in contact with the corresponding electrode 140 on the substrate 123, and the contactor assembly 121 is electrically connected to the substrate 123. I am doing it.

According to the contact device 120D of this embodiment,
A plurality of types of contactor assemblies having the same outer dimensions and different arrangements of the wire rod pieces may be prepared in advance, and the contactor assemblies may be exchanged according to the object to be measured. Further, in the above embodiment, the board 123 and the mother board 136 are connected to each other as shown in FIG.
As shown in (A), it may be configured to be connected by a lead 190 having a gull wing shape. Further, as shown in FIG. 21B, a structure may be used in which the through holes 191 are used for connection.

In the above second to sixth embodiments, the contact device is used for testing the semiconductor chip, but the object to be measured by the contact device of the present invention is not limited to the semiconductor chip. For example, a ball grid array type semiconductor device is also an object to be measured.

Further, a plurality of types of contact devices such as a contact device for a semiconductor chip and a contact device for a ball grid array type semiconductor device are prepared in advance, and the contact device is exchanged on the motherboard 136. By doing so, the motherboard 136 may be replaced with a plurality of types of objects to be measured.

Next, a seventh embodiment of the present invention will be described. FIG. 22 shows an I to which a semiconductor device test jig (hereinafter referred to as a test jig) 200 according to the seventh embodiment of the present invention is applied.
The C socket 201 is shown. IC socket 201
Is composed of a socket body 202, a lid 203, a lock member 204, a test jig 200, and the like.

The socket body 202 and the lid body 203 are made of an insulating resin, and the lid body 203 is rotatably supported by the socket body 202 by a shaft 205 arranged at one end of the socket body 202. There is. Further, when the lid body 203 is closed, the socket body 202
A space 206 is formed between the cover 203 and the lid 203, and the test jig 200 is formed in the space 206.
Are arranged. Further, the socket body 202 is formed with a through hole 214 through which the pin-shaped terminal 213 arranged in the test jig 200 penetrates.

A shaft 207 is also arranged at the other end of the socket body 202, and a lock member 204 is rotatably supported on the shaft 207. The collar portion 208 formed on the lid body 203 is configured to engage with the locking member 204, and when the lid body 203 closes the socket body 202, the locking member 204 engages with the collar portion 208, The body 203 is configured to be locked in the closed state (FIG. 22 shows the state in which the lid 203 is closed).

The test jig 200 is, as will be described in detail later,
A semiconductor device 210 to be tested is placed on the upper part of a plurality of wire-shaped connecting members 209, and the semiconductor device 210
Is configured to perform a predetermined test. The semiconductor device 210 has a plurality of bumps 21 as external terminals on its bottom surface.
1 is formed, and the connection member 209 is configured to be electrically connected by contacting the bump 211.

Therefore, it is necessary to position the semiconductor device 210 on the test jig 200 so that the connection member 209 and the bump 211 come into contact with each other, and the connection member 209 and the bump 21.
If it deviates from 1, an accurate test cannot be performed. However, a positioning recess 212 that engages with the semiconductor device 210 is formed at a predetermined position of the lid 203. Therefore, by engaging the semiconductor device 210 with the positioning recess 212, it is possible to prevent the semiconductor device 210 from being displaced in the IC socket 201, and to perform an accurate test.

Next, regarding the structure of the test jig 200,
It demonstrates using FIG. 23 in addition to FIG. Note that FIG. 23 is an enlarged view of the test jig 200, and the pin-shaped terminals 213 described later are omitted. Test jig 200
Is composed of a connection member 209, a support member 215, a wiring board 216, and the like. Connection member 20
Reference numeral 9 is a wire-shaped member made of, for example, a material such as copper, BeCu, or TiNi, and the upper end portion 209a thereof is the bump 211 provided on the semiconductor device 210 as described above.
Is abutted against and electrically connected. Also,
The connection member 2 in the state of being attached to the test jig 200
09 is configured so as to slightly project from the upper surface of the wiring substrate 216, and is configured so that good electrical connection with the bumps 211 can be achieved.

The supporting member 215 is formed of a material having elasticity and insulating properties such as silicon rubber, and the lower end portion 209b of the connecting member 209 is planted in the supporting member 215. It is fixed. Therefore, the plurality of connecting members 209 are erected to support member 215.
Supported by Further, the arrangement positions of the plurality of connection members 209 with respect to the support member 215 are configured to correspond to the formation positions of the bumps 211 arranged in the semiconductor device 210.

As the wiring board 216, a printed wiring board made of glass epoxy is used in the present embodiment, and the cost is reduced. The wiring board 216 has an insertion hole (configured so as to correspond to the formation position of the bump 211) through which the above-mentioned connection member 209 is inserted, and a film of a conductive material is formed in the insertion hole. A through-hole-shaped connection terminal portion 217 is formed.

The connection member 209 is inserted into the insertion hole formed in the wiring board 216 to come into contact with the connection terminal portion 217 to be electrically connected. Further, when the connecting member 209 is inserted through the insertion hole, the connecting member 209 is supported by the supporting member 215 so as to correspond to the formation position of the bump 211 arranged on the semiconductor device 210, as described above, so that the connecting member 209 is collectively supported. Further, the plurality of connection members 209 can be inserted into the insertion holes formed in the wiring board 216, and the insertion work can be easily performed. Moreover, since the support member 215 is formed of an insulating member, the plurality of connection members 209 will not be short-circuited by the support member 215.

Further, a terminal insertion hole 218 into which the pin-shaped terminal 213 is inserted is formed at the outer peripheral position of the wiring board 216. Further, on the upper surface of the wiring board 216, a lead-out wiring 219 for drawing the connection terminal portion 217 to the outer peripheral position of the wiring board 216 is formed. The lead wiring 219 is formed by printing on the wiring board 216, and is drawn to the vicinity of the formation position of the terminal insertion hole 218. The terminal insertion hole 218 is also coated with a conductive material to form a through hole. In addition, the lead wiring 219 and the connection terminal portion 21
7, and the lead wiring 219 and the conductive film formed in the terminal insertion hole 218 are integrated and electrically connected.

The pin-shaped terminal 213 is electrically connected to the lead wiring 219 by being inserted into the terminal insertion hole 218. Further, a head portion 213a having a diameter larger than that of the terminal insertion hole 218 is formed at the upper end portion of the pin-shaped terminal 213. Therefore, by inserting the pin-shaped terminal 213 into the terminal insertion hole 218, the head portion 213a comes into contact with the lead wiring 219, and electrical connection is also made at this portion.

At this time, in order to ensure the electrical connection between the pin-shaped terminal 213 and the lead wire 219, the head portion 213a and the lead wire 219 may be soldered as shown in FIG. Reference numeral 22 for the solder joint
6). Alternatively, as shown in FIG. 31, a conductive paste (conductive member) 227 may be applied between the pin-shaped terminal 213 and the lead wiring 219.

Since the pin-shaped terminal 213 is electrically connected to the lead wiring 219 as described above, the pin-shaped terminal 213 is electrically connected to the connecting member 209 via the lead wiring 219 and the connection terminal portion 217. It In the test jig 200 according to the present embodiment, as described above, the upper end portion 209a of the wire-shaped connecting member 209 is the semiconductor device 2 to be tested.
The bumps 211 provided in 10 are brought into contact with each other to be electrically connected. At this time, since the connecting member 209 is in the form of a wire, it can be arranged close to each other. Therefore, μB
The test jig 200 according to the present embodiment can be applied to the semiconductor device 210 in which the bumps 211 such as GA are densely arranged.

Further, since the supporting member 215 is made of an elastic material such as silicon rubber, each connecting member 209 can be vertically displaced by elastically deforming the supporting member 215. Therefore, the connection terminal portion 217 is configured to be movable up and down while the connection member 209 maintains electrical connection inside the connection terminal portion 217, so that the length of the connection member 209 may vary due to dimensional error or the like. Even if there is such variation, the connection member 217 can be reliably connected to the bump 211 of the semiconductor device 210 regardless of this variation. Therefore, with the above structure, the reliability of the semiconductor test can be improved.

Further, on the wiring board 216 provided on the test jig 200 according to this embodiment, the connection terminal portion 217 electrically connected to the connection member 209 and the connection terminal portion 217 are provided.
Is formed on the pin-shaped terminal 213. Therefore, it is possible to use the wiring board 216 to electrically connect the connection member 209 to the pin-shaped terminal 213 that draws the connection member 209 out of the test jig 200.

Here, paying attention to the contact device 120 described above with reference to FIG. 12, the wire rod piece 124 (corresponding to the connecting member 209 of the present embodiment) in the configuration shown in FIG.
Since they are connected to the board 123 by soldering them individually, the soldering process becomes very troublesome. This becomes a more important problem when the arrangement pitch of the wire rod pieces 124 is narrowed.

On the other hand, in this embodiment, the connecting member 209 is used.
The connecting member 209 can be pulled out to the pin-shaped terminal 213 only by inserting the connector into the connecting terminal portion 217 formed on the wiring board 216, and the connection structure between the connecting member 209 and the wiring board 216 can be simplified. Also, each connection member 2
Even if the arrangement pitch of 09 is narrowed, it can be electrically connected to the wiring board 216 simply by inserting it into the connection terminal portion 217, so that it is possible to easily cope with the narrowed pitch.

Further, as described above, the connecting member 209 is electrically connected to the connecting terminal portion 217 by being inserted into the connecting terminal portion 217 formed on the wiring board 216. Therefore, in order to ensure the electrical connection between the connection member 209 and the connection terminal portion 217, as shown in FIG. 28, the surface plating layer 2 is formed on the surface of the connection member 209 by solder or gold.
24 may be formed.

Further, as shown in FIG. 29, a conductive paste (conductive member) 225 is applied between the upper end portion of the connection member 209 and the connection terminal portion 217, whereby the connection member 209 and the connection terminal portion 217 are formed. It may be configured to improve the electrical connectivity with 217. 24 and 25 show test jigs 200A and 200B which are modified examples of the test jig 200 according to the seventh embodiment described above. Incidentally, in each drawing, the test jig 2 according to the seventh embodiment shown in FIG. 22 and FIG.
The same components as those of No. 00 are denoted by the same reference numerals and the description thereof will be omitted.

The test jig 200A shown in FIG. 24 is characterized by using a ceramic substrate as the base material of the wiring board 216A, and the test jig 200 shown in FIG.
B is characterized by using a polyimide film substrate as a base material of the wiring substrate 216A.

Thus, the wiring boards 216A, 216B
By using the ceramic substrate or the polyimide film substrate as the base material of the above, it is possible to miniaturize the arrangement pitch of the connection members 209, and the density of the semiconductor device 2 is increased.
It becomes possible to correspond to 10.

FIG. 26 shows a test jig 200C which is an eighth embodiment of the present invention. Note that, also in this figure, the same components as those of the test jig 200 according to the seventh embodiment shown in FIGS. 22 and 23 are denoted by the same reference numerals, and the description thereof will be omitted. The test jig 200C according to the present embodiment uses two wiring boards 220 and 221.
It is characterized in that 21 is laminated with a supporting member 215 interposed therebetween. In this embodiment, a glass epoxy substrate having the same structure as the wiring board 216 shown in FIGS. 22 and 23 is used as the wiring board 220, and the wiring board 221 is the wiring board 216B shown in FIG. The same polyimide film substrate is used.

In addition, in this embodiment, the supporting member 215 is used.
A is interposed between the pair of wiring boards 220 and 221, and the connecting member 209 has the central portion thereof at the support member 21.
It is configured to be supported by 5A. Further, the connection member 209 is configured to pass through the connection terminal portions 217 formed on the wiring boards 220 and 221 together.

According to the test jig 200C of the present embodiment, the plurality of wiring boards 220 and 221 are arranged in a laminated state, so that the lead wiring 219 formed on each wiring board 220 and 221 is arranged. The position can be provided with a degree of freedom, and accordingly, the arrangement pitch of the connection portions can be narrowed.

Specifically, compared with the case where the test jig is composed of one wiring board, each wiring board 22 is used in this embodiment.
It is possible to halve the number of the lead wirings 219 formed in 0 and 221, so that the arrangement position of the lead wirings 219 can have flexibility.

FIG. 27 shows a test jig 200D which is a ninth embodiment of the present invention. In the figure, the same components as those of the test jig 200C according to the eighth embodiment shown in FIG. 26 are designated by the same reference numerals, and the description thereof will be omitted. The test jig 200D according to the present embodiment further includes a wiring board 222 laminated under the test jig 200C according to the eighth embodiment,
A total of three wiring boards 220 to 222 are laminated. An insulating member 223 is interposed between the wiring board 220 and the wiring board 222.

In this embodiment, as the wiring board 222, a polyimide film board having the same structure as the wiring board 216B shown in FIG. 25 is used. Further, the insulating member 223 has the same structure as the supporting member 215A shown in FIG. 26, and the connecting member 209 has an upper portion thereof as the supporting member 215.
In addition to being supported by A, the lower part is supported by the insulating member 223. Further, the connecting member 209
Are configured to be inserted together with the connection terminal portions 217 formed on the wiring boards 220 to 222.

According to the test jig 200D of this example, the insulating member 223 through which the connecting member 209 is inserted is interposed between the laminated wiring boards 220 and 222, so that the wiring boards 220 can be connected. , 222 can be prevented from short-circuiting the connection terminal portion 217 and the lead wiring 219 formed between the layers (this function also has the supporting members 215 and 215A). Also, the insulating member 2
Since 23 has a function of supporting the connection member 209, the mechanical strength of the connection member 209 can also be improved.

In the eighth and ninth embodiments described above, 2
Although the configuration is shown in which one or three wiring boards are laminated and only one insulating member 22 is provided, the number of wiring boards is not limited to this, and may be three or more. A plurality of members may be provided corresponding to the number of wiring boards.

FIG. 32 shows a test jig 200E which is a tenth embodiment of the present invention. 22 and 23, the same components as those of the test jig 200 according to the seventh embodiment shown in FIGS. 22 and 23 and the test jig 200C according to the eighth embodiment shown in FIG. The description is omitted.

The test jig 200E according to this embodiment has a structure in which two wiring boards 220 and 221 are laminated. Further, a supporting member 215A is interposed between the wiring board 220 and the wiring board 221. Further, in this embodiment, the insulating member 223A is also interposed between the wiring board 220 and the socket body 202.

Also, the test jig 200E according to the present embodiment.
Is characterized by using a TAB (Tape Automated Bonding) method for electrically connecting the wiring boards 220 and 221. Specifically, the TAB lead 228 is disposed on the wiring board 221 located on the upper side so as to be electrically connected to the wiring board 221, and the TAB lead 228 is routed to the wiring board 220 located on the lower side.
It is configured to be connected to the lead wiring 219.

Since the TAB lead 228 has flexibility, the TAB lead 228 can be easily routed from the wiring board 221 located above to the wiring board 220 located below. Therefore, the wiring board 2 located above
Electrical connection between the wiring board 21 and the wiring board 220 located below can be easily and reliably performed.

FIG. 33 shows a test jig 200F which is an eleventh embodiment of the present invention. In the figure, the same components as those of the test jig 200E according to the tenth embodiment shown in FIG. 32 are designated by the same reference numerals, and the description thereof will be omitted. The test jig 200F according to the present embodiment includes the wiring board 22.
The wiring board 229, which is a ceramic board, is laminated on the upper part of 0. The lead wiring 219A formed on the ceramic substrate is formed on the surface facing the wiring substrate 220. Test jig 200 according to the present embodiment
F is characterized by using a bump method for electrically connecting the wiring boards 220 and 229.

Specifically, an interlayer connection bump 230 is formed in a position of the lead-out wiring 219 formed on the wiring board 220 facing the wiring board 229, and the interlayer connection bump 230 is formed on the wiring board 220. The drawn-out wiring 219 and the drawn-out wiring 219A formed on the wiring board 229 are electrically connected.

Therefore, the wiring board 229 and the wiring board 220
Can be performed by the same process as the face-down bonding, and the electrical connection between the wiring board 229 located above and the wiring board 220 located below can be easily and reliably performed. In addition, the bump 230 for interlayer connection
To connect using the lead wires 219, 219.
Even if the number of A's arranged is large, this can be easily dealt with.

FIG. 34 shows a test jig 200G which is a twelfth embodiment of the present invention. The test jig 200 shown in FIG.
G is a lead wire 21 formed on the wiring board 216C.
9 and the pin-shaped terminal 213 are connected using a wire 231.

By adopting the structure in which the lead wiring 219 and the pin-shaped terminal 213 are connected using the wire 231, as in the present embodiment, it is possible to use the wire bonding apparatus generally used in the semiconductor manufacturing technology. Therefore, the connection between the lead wiring 219 and the pin-shaped terminal 213 can be easily and efficiently performed.

Further, in this embodiment, the wiring board 2 having a single layer structure is used.
16C and the pin-shaped terminal 213 are connected by the wire 231, a plurality of wiring boards 220, such as the test jig 200E according to the tenth embodiment shown in FIG.
In the structure in which the layers 221 are stacked, the wires 231 may be used instead of the TAB leads 228, so that the interlayer connection can be made by the wires 231. Also in this configuration, it is possible to easily and efficiently connect the plurality of wiring boards 220 and 221.

FIG. 35 shows test jigs 200H and 200I which are the thirteenth embodiment of the present invention. Incidentally, the test jig 2 according to the seventh embodiment shown in FIGS.
00 and a test jig 200 according to the modification shown in FIG.
The same configurations as those of B are given the same reference numerals and the description thereof will be omitted.

The test jig 200 according to each of the above-mentioned embodiments,
The semiconductor devices 200A to 200G are tested on the semiconductor device 210 in a state in which they are mounted on the motherboard 136 similarly to the contact device 120 described above with reference to FIG. That is, the tester body 135 is attached to the mother board 136.
Are connected to each other, and the test apparatus main body 135 and the semiconductor device 210 are connected to the mother board 136 and the test jigs 200 and 2.
The semiconductor device 210 is electrically connected through 00A to 200G, and thus the semiconductor device 210 is tested.

Therefore, the test jigs 200, 200A to 20
It is necessary to connect 0G to the mother board 136, but the test jigs 200, 200A to 20 according to the above-described embodiments are connected.
In 0G, the pin-shaped terminal 2 is used to connect to the motherboard 136.
I was using 13. On the other hand, the test jigs 200H and 200I according to the present embodiment are similar to the test jigs 200H and 2H.
00I is directly arranged on the motherboard 136. The test jig 2 shown in FIG.
00H is a configuration in which a glass epoxy board is used as the wiring board 216, and the test jig 20 shown in FIG.
0I is a configuration using a polyimide film substrate as the wiring substrate 216B.

The test jigs 200H and 200 according to this embodiment.
I is directly mounted on the motherboard 136 without using the IC socket 201. Also, the test jigs 200H and 200I and the mother board 136
Instead of the pin-shaped terminal 213, the test jig 20 is connected.
0H uses the board connecting wire 232, and the test jig 200I uses the board connecting TAB lead 233.
Is used.

As described above, the test jig 20 according to the present embodiment.
According to OH, 200I, since the wiring boards 216 and 216B are directly electrically connected to the mother board 136, the wiring boards 216 and 216B and the mother board 136 are connected.
The components such as the pin-shaped terminal 213 are not required to connect the and. Therefore, it is possible to electrically connect the test jigs 200H and 200I and the motherboard 136 with a simple configuration and a simple connection work.

In the embodiment shown in FIG. 35, only the embodiment using the glass epoxy substrate as the wiring substrate 216 and the embodiment using the polyimide film substrate as the wiring substrate 216B are described, but it is constituted by the ceramic substrate. Even if the wiring board 200A is used, it is possible to directly electrically connect to the mother board 136 in the same manner as described above.

FIG. 36 shows an IC socket 201A using a test jig 200J which is a fourteenth embodiment of the present invention. In the figure, the same components as those of the test jig 200 and the IC socket 201 according to the seventh embodiment shown in FIG. 22 are designated by the same reference numerals and the description thereof will be omitted.

The test jig 200J according to this embodiment includes a plurality of (two in this embodiment) semiconductor devices 210A and 210B.
It is characterized in that it can be arranged.
Corresponding to this, the lid 20 of the IC socket 201A
Two positioning recesses 212A and 212B for positioning the semiconductor devices 210A and 210B are formed in 3A.

As described above, the test jig 2 according to this example.
00J has a structure in which a plurality of semiconductor devices 210A and 210B can be arranged at the same time.
It is possible to collectively perform the test on 10A and 210B, and it is possible to improve the test efficiency.

[0211]

According to the present invention as described above, the following various effects can be realized. According to the invention described in claim 1, by inserting the test electrode into the inside of the protruding electrode, electrical connection between the test electrode and the inside of the protruding electrode can be achieved, and mechanical pressure from the outside can be achieved. It is possible to obtain the mounting strength between the semiconductor device and the substrate body during mounting without using. Therefore, it is possible to prevent the test electrode and the protruding electrode from being deformed or damaged.
Further, when the oxide film is formed on the surface of the bump electrode, the test electrode breaks the oxide film and connects to the bump electrode, so that the electrical connection can be surely made.

Further, it is not necessary to apply heat when the test electrode is loaded inside the bump electrode, and the test electrode and the bump electrode can be electrically connected at room temperature.
It is possible to prevent deterioration of the protruding electrodes due to heat.

Further, when electrically connecting the test electrode and the bump electrode, it is necessary to interpose other conductive members between the test electrode and the bump electrode and between the semiconductor device and the substrate body. Since it is eliminated, the reliability of the protruding electrode can be improved. Further, according to the inventions of claims 2 and 3, since it is possible to prevent the material forming the test electrode from being mixed with the material forming the bump electrode at the operating temperature to form an alloy or a metal compound, It is possible to prevent deterioration.

According to the fourth and fifth aspects of the invention, the coating film prevents the material forming the test electrode from being mixed into the material forming the bump electrode. Can be prevented from deteriorating. Also,
According to the invention of claim 6, since the test electrode is constituted by the wire bump, the height of the test electrode from the substrate main body can be arbitrarily set. Also,
Since the wire bump can be formed by using a wire bonding device that is widely used in the semiconductor manufacturing process, the test electrode can be formed efficiently and at low cost.

Further, according to the invention described in claim 7, by disposing the plurality of test electrodes with different projecting heights from the substrate main body, the test electrodes corresponding to the projecting electrodes which do not need to be tested can be provided. The electrodes can be configured so that their height is reduced to prevent electrical connection, and that the test electrodes corresponding to the protruding electrodes that need to be tested are increased in height to make electrical connection. Becomes That is, the test can be selectively performed on the protruding electrode. Accordingly, it is possible to prevent the protruding electrode that does not need to be tested from being unnecessarily deformed by the test electrode.

Further, according to the invention of claim 8, the mechanical strength of the test electrode is set to be stronger than the mechanical strength of the protruding electrode, whereby the deformation of the test electrode can be prevented, The test substrate can be reused, and it is not necessary to adjust the test electrode every time the test substrate is tested.

According to the ninth aspect of the invention, since the pedestal portion having a relatively large bottom area is connected to the substrate body, the test electrode can be firmly fixed to the substrate body. Further, since the protrusion having a smaller cross-sectional area than the pedestal is inserted into the protrusion electrode, the process of inserting the protrusion into the protrusion electrode can be performed easily and reliably.

According to the tenth aspect of the invention, in the step of mounting the semiconductor device, the protruding electrode formed on the semiconductor device under normal temperature environment is inserted into the test electrode provided on the test substrate to form the protruding electrode. It becomes possible to electrically connect with the test electrode. Also, the semiconductor device can be removed from the test substrate in a room temperature environment even in the removal step after the test is completed. Therefore, impurities do not enter the protruding electrodes during the semiconductor device mounting process,
It is possible to perform a highly accurate test in the test process performed thereafter. Moreover, since the heat treatment is not required, the test apparatus can be simplified.

Further, in the removal step carried out after the test step, the semiconductor device has a structure in which the test electrode is simply mounted on the test substrate by inserting the test electrode into the projecting electrode, so that the semiconductor device is simply pulled out. The semiconductor device can be removed from the test substrate by operation. At this time, no heat treatment is necessary, and therefore, it is possible to prevent deterioration of the protruding electrodes.

According to the eleventh aspect of the invention, by performing the wet-back step of shaping the protruding electrodes provided on the semiconductor device after the removing step, the shaping of the protruding electrodes can be performed well. Can be done.

According to the twelfth aspect of the present invention, since the wire rod pieces are arranged upright with respect to the substrate, the wire rod pieces can be made smaller than in the conventional arrangement in which long needles are obliquely arranged radially. The length can be shortened significantly, and therefore, the length of the signal transmission path formed by the wire rod pieces can be shortened, and the inductance of the wire rod pieces can be made significantly smaller than the conventional one. As a result, it is possible to normally test the characteristics of an object to be measured that handles a signal having a frequency higher than that of the conventional one.

Further, since the wire rod pieces are upright with respect to the substrate, the elastic force generated by the elastic buckling deformation of the wire rod pieces becomes the contact pressure of the wire rod pieces to the electrode of the object to be measured, Even if the contactor is composed of small wire pieces,
A sufficient contact pressure can be obtained, and the characteristic test of the measured object can be normally performed.

Since the arrangement means is provided,
Although the contactor is a wire rod piece and it is difficult to position the tip of the wire rod, the tip ends of the wire rod pieces can be aligned with high positional accuracy, and the manufacturing is easy. In addition, even if the tip of the wire rod piece is accidentally impacted during handling, the pitch of the tip of the wire rod piece is effectively prevented from shifting, and the pitch of the tip of the wire rod piece is normal. Kept in
The tips of all the wire rod pieces can be brought into contact with the electrodes even for the object to be measured in which the electrodes are arranged at a narrow pitch.
It is possible to normally perform the characteristic test on the object to be measured in which the electrodes are arranged at a narrow pitch.

According to the thirteenth to seventeenth inventions, basically, the same effects as the above-mentioned twelfth invention are obtained. Further, claim 13 and claim 15
According to the invention, the soft sheet and the soft material can prevent the buckled and deformed portions of the wire rod pieces from short-circuiting, and thus the reliability can be improved.

According to the seventeenth aspect of the invention, since the positioning frame is provided and the contact assembly is fitted in the positioning frame, the replacement of the contact assembly can be facilitated. I can. According to the invention of claim 18,
Since the contactor device is configured to be replaceable, a plurality of contactor devices are prepared in advance, and when the measured object to be tested is changed, the contactor device up to now is removed and another contactor device is replaced. The test can be performed only by mounting the contactor device, and thus the versatility of the test method can be enhanced.

According to the nineteenth aspect of the present invention, the high density makes it possible to perform a test even on a semiconductor device in which external terminals are arranged at a narrow pitch. In addition, the connection member can be collectively inserted into the insertion hole formed in the wiring board. Further, since the supporting member is formed of the insulating member, the plurality of connecting members will not be short-circuited by the supporting member. Further, since it is possible to electrically connect with the connecting member using the wiring board, it is possible to simplify the structure for electrically pulling out the connecting member to the outside.

According to the twentieth aspect of the invention, the cost can be reduced by using the glass epoxy substrate as the base material of the wiring board. Further, by using a ceramic substrate or a polyimide film substrate as the base material of the wiring substrate, the arrangement pitch of the connecting members can be miniaturized.

According to the twenty-first aspect of the invention, it is possible to provide the lead wires formed on the wiring board with a high degree of freedom in the arrangement position, and accordingly, the arrangement pitch of the connection members can be narrowed. can do. According to the twenty-second aspect of the present invention, it is possible to prevent the connection terminal portion and the lead wiring formed on each wiring board from being short-circuited between the layers, and the insulating member has a function of supporting the connection member. Since it has, the mechanical strength of the connecting member can be improved.

According to the twenty-third aspect of the invention, each connecting member can be vertically displaced by elastically deforming the supporting member, so that the length of the connecting member varies due to dimensional error or the like. Even if this occurs, the tip of the connecting member can be reliably electrically connected to the external terminal of the semiconductor device.

According to the invention as set forth in claim 24, the connection member and the connection terminal portion can be surely electrically connected. According to the twenty-fifth aspect of the invention, electrical connection between the laminated wiring boards can be easily and reliably performed.

According to the twenty-sixth aspect of the invention, since the test jig can be connected to the mother board by using the pin-shaped terminals, the connection process can be easily performed. According to the twenty-seventh aspect of the present invention, there is no need to additionally connect the wiring board and the mother board, and the wiring board and the mother board can be electrically connected with a simple structure.

According to the twenty-eighth aspect of the present invention, the test efficiency can be improved by the configuration in which a plurality of semiconductor devices can be arranged. Furthermore, according to the twenty-ninth aspect of the invention, the semiconductor device can be surely positioned at the time of the test, so that the connection failure with the external terminal connecting member due to the position shift of the semiconductor device can be prevented.

[Brief description of the drawings]

FIG. 1 is a diagram showing a state in which a test substrate (test substrate) of a semiconductor device according to an embodiment of the present invention is in a test process.

FIG. 2 is an exploded view of a test substrate of the semiconductor device shown in FIG.

FIG. 3 is an enlarged view showing a wire bump and a bump electrode when a semiconductor device is mounted on a test substrate.

FIG. 4 is a diagram for explaining a removing step.

FIG. 5 is a diagram for explaining the reason why voids are removed.

FIG. 6 is a diagram for explaining a first modified example.

FIG. 7 is a diagram for explaining a second modified example.

FIG. 8 is a diagram for explaining a third modified example.

FIG. 9 is a diagram for explaining the shape of a wire bump.

FIG. 10 is a diagram showing a wire bump having a coating film formed thereon.

11 is a perspective view showing a part of the contactor device of FIG. 12 by cutting it.

FIG. 12 is a vertical cross-sectional view of a contact device according to a second embodiment of the present invention.

13 is a plan view of the contact device of FIG.

FIG. 14 is a diagram showing a state in which the contactor device of FIG. 11 is abutted against a semiconductor chip.

FIG. 15 is a vertical sectional view of a contactor device according to a third embodiment of the present invention.

16 is a diagram showing a state in which the contactor device of FIG. 15 is abutted against a semiconductor chip.

FIG. 17 is a diagram illustrating a method of manufacturing the contactor device of FIG. 15.

FIG. 18 is a vertical sectional view of a contact device according to a fourth embodiment of the present invention.

FIG. 19 is a vertical sectional view of a contactor device of a fifth embodiment of the present invention.

FIG. 20 is a diagram showing a contact device according to a sixth embodiment of the present invention.

FIG. 21 is a diagram showing a modification of the electrical connection between the board and the motherboard.

FIG. 22 is a sectional view showing an IC socket using a test jig for a semiconductor device according to a seventh embodiment of the present invention.

FIG. 23 is an enlarged sectional view showing a test jig that is a seventh embodiment of the present invention.

FIG. 24 is an enlarged sectional view showing a test jig which is a modified example of the seventh embodiment.

FIG. 25 is an enlarged sectional view showing a test jig which is a modified example of the seventh embodiment.

FIG. 26 is an enlarged sectional view showing a test jig which is an eighth embodiment of the present invention.

FIG. 27 is an enlarged sectional view showing a test jig which is a ninth embodiment of the present invention.

FIG. 28 is an enlarged cross-sectional view showing a plated portion formed on the connection member.

FIG. 29 is an enlarged cross-sectional view showing a conductive member arranged between a connection member and a connection terminal.

FIG. 30 is an enlarged cross-sectional view showing a plated material provided between a pin-shaped terminal and a lead wire.

FIG. 31 is an enlarged cross-sectional view showing a conductive member arranged between a pin-shaped terminal and a lead wire.

FIG. 32 is an enlarged sectional view showing a test jig which is a tenth embodiment of the present invention.

FIG. 33 is an enlarged sectional view showing a test jig which is an eleventh embodiment of the present invention.

FIG. 34 is an enlarged sectional view showing a test jig which is a twelfth embodiment of the present invention.

FIG. 35 is an enlarged sectional view showing a test jig that is a thirteenth embodiment of the present invention.

FIG. 36 is an enlarged sectional view showing a test jig that is a fourteenth embodiment of the present invention.

FIG. 37 is a diagram for explaining a conventional semiconductor device testing method.

FIG. 38 is a diagram for explaining a conventional semiconductor device testing method.

FIG. 39 is a diagram for explaining a conventional semiconductor device testing method.

FIG. 40 is a diagram for explaining a conventional semiconductor device testing method.

FIG. 41 is a diagram showing a conventional contact device.

[Explanation of symbols]

20 Test Substrate 21 Burn-in Test Board 22, 34 Semiconductor Device 23 Substrate Main Body 24, 24A, 24B Wire Bump (Test Electrode) 26 Element Main Body 27, 27A to 27E Projection Electrode 28 Adsorption Device 31 Void 33 Flat Plate Electrode 35 Dummy Bump 112 Semiconductor Chip 115 Electrodes 120, 120A, 120B, 120C, 120D
Contact device 123 Substrate 123a Top surface 124 Wire rod small piece 124a Lengthwise central part 124b Portion protruding upward from the sheet 124c Portion protruding downward from the sheet 124d Wire rod small portion protruding above the glass plate 124e Upper end 124f Part of wire rod small piece protruding below the glass plate 124g Lower end 125 Silicone rubber sheet 126, 127 Glass plate 128, 129 Through hole 130 Synthetic resin part 135 Test device body 136 Motherboard 137 Test device 140 Electrode 141 Wiring pattern 142 Electrode for external connection 145 Solder 146 Electrode 147 Wiring pattern 148 Wire 150 Interval 151, 162 Buckling deformed portion 160 Support frame 161 Space 170 Filled silicone rubber 18 Positioning frame 190 Gull wing-shaped lead 191 Through hole 200, 200A to 200J Test jig 201, 201A IC socket 202 Socket body 203, 203A Lid body 204 Lock member 209 Connection member 209a Upper end 209b Lower end 210, 210A, 210B Semiconductor Device 211 Bumps 212, 212A, 212B Positioning recess 213 Pin-shaped terminals 215, 215A Supporting members 216, 216A to 216C, 220 to 222, 229
Wiring board 217 Connection terminal part 218 Terminal insertion hole 219 Lead wiring 223, 223A Insulation member 224 Surface plating layer 225, 227 Conductive paste 228 TAB lead 230 Inter-layer connection bump 231 wire 232 Board connection wire 233 Board connection TAB lead

Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location H01L 21/92 604T (72) Inventor Masataka Mizukoshi 1015 Uedoda, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited (72 ) Inventor Shuichiro Takahashi 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Tatsuharu Matsuda, 1015, Uedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (72) Inventor, Kunio Kodama, Kanagawa Prefecture 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Fujitsu Limited (72) Inventor: Joji Fujimori, 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Kanagawa Prefecture, Ltd. (72) Shoji Takenaka, 1015, Uedotaka, Nakahara-ku, Kawasaki-shi, Kanagawa Address within Fujitsu Limited (72) Inventor Tatsuro Yamashita 5950 Soeda, Iriki-cho, Satsuma-gun, Kagoshima Prefecture Kyushu Fujitsu Electronics Limited

Claims (29)

[Claims] 1. A semiconductor device having a protruding electrode formed thereon is mounted on a substrate main body, and a test electrode formed on the substrate main body is electrically connected to the protruding electrode in the mounted state, thereby performing the test. In a test substrate of a semiconductor device configured to test the semiconductor device via an electrode, the test electrode has a protruding electrode structure protruding vertically upward with respect to the substrate body, and the semiconductor device has the substrate body. A test substrate for a semiconductor device, wherein the test electrode is mounted inside a protruding electrode provided in the semiconductor device in a state of being mounted on the test substrate. 2. The test substrate for a semiconductor device according to claim 1, wherein the test electrode has a structure in which an additive is added to a base material, and the test electrode and the protruding electrode are alloy or metal at a working temperature. A test substrate for a semiconductor device, which has a structure that does not generate a compound. 3. The test substrate for a semiconductor device according to claim 2, wherein gold (Au) or palladium (Pd) is used as the base material. 4. The test substrate for a semiconductor device according to claim 1, wherein a surface of a base material forming the test electrode is coated with a material that does not form an alloy or a metal compound with the protruding electrode at a use temperature. A test substrate for a semiconductor device, wherein a film is formed. 5. The test substrate for a semiconductor device according to claim 4, wherein nickel (Ni) is used as the coating film. 6. The test substrate for a semiconductor device according to claim 1, wherein the test electrode is constituted by a wire bump. 7. The test substrate for a semiconductor device according to claim 1, wherein the plurality of test electrodes are arranged so that the projecting heights from the substrate body are different. Test board for semiconductor device. 8. The test substrate for a semiconductor device according to claim 1, wherein the mechanical strength of the test electrode is set higher than the mechanical strength of the protruding electrode. Characteristic semiconductor device test substrate. 9. The test substrate for a semiconductor device according to claim 1, wherein the test electrode is a pedestal portion having a predetermined bottom area, and extends above the pedestal portion. A test substrate for a semiconductor device, comprising a protrusion having a cross-sectional area smaller than that of the pedestal. 10. A semiconductor device testing method for testing a semiconductor device using the test substrate for a semiconductor device according to claim 1, wherein the semiconductor device is tested under a normal temperature environment. By mounting the projecting electrode formed on the semiconductor device on the test electrode provided on the test substrate by mounting it on the substrate body of the test substrate, the projecting electrode and the test electrode are electrically connected. A semiconductor device mounting step of electrically connecting the semiconductor device, a test step of performing a predetermined test on the semiconductor device using the test electrode connected to the protruding electrode, and a test step after completion of the test step in a room temperature environment. And a step of removing the semiconductor device from the test substrate. 11. The method for testing a semiconductor device according to claim 10, wherein after the removing process is performed, a wet back process is performed to perform a shaping process for a protruding electrode provided on the semiconductor device. Semiconductor device testing method. 12. A substrate having a large number of electrodes on its upper surface, one end of which is electrically connected and fixed to the electrodes of the substrate, and which is upright with respect to the substrate, and has a force in the axial direction. A large number of small wire rod pieces that are elastically buckled when actuated and through holes arranged in an array corresponding to the array of the electrodes of the object to be measured are provided. Attached in a state of penetrating through the holes, each of the plurality of wire rod pieces is constituted by an aligning unit that regulates the position so that each tip is aligned in an array corresponding to the array of the electrodes of the object to be measured, A contact device, wherein the tip of the wire rod is in contact with the electrode of the object to be measured, and the wire rod is elastically buckled. 13. A substrate having a large number of electrodes on its upper surface, one end of which is electrically connected and fixed to the electrodes of the substrate, and which is upright with respect to the substrate, so that a force in the axial direction is exerted. A large number of wire rod pieces that are thin enough to elastically buckle when acted, and a soft sheet that penetrates through the wire rod pieces and that supports the central portion in the longitudinal direction of the wire rod pieces. , Having through holes arranged in an array corresponding to the array of the electrodes of the object to be measured, and the through holes are fitted to a portion of each of the wire rod pieces protruding above the soft sheet. , The tip portion of the portion protruding upward is provided on the upper side of the soft sheet in a state of protruding through the through hole, and each of the plurality of wire rod pieces has the tip portion of the object to be measured. Positionally regulated so that the electrodes are aligned in an array that corresponds to the array of electrodes A member and through holes arranged in an array corresponding to the array of electrodes of the object to be measured, and the through holes are fitted to a portion of each of the wire rod pieces projecting downward from the soft sheet. It is provided on the lower side of the soft sheet in a combined state, and the portions of the wire rod pieces protruding downward from the soft sheet are arranged in an array corresponding to the array of the electrodes of the measured object. The lower plate member that regulates the position so that the tip of the wire rod piece comes into contact with the electrode of the object to be measured, and the central portion in the lengthwise direction of the wire rod piece is elastically buckled. A contact device. 14. A substrate having a large number of electrodes on its upper surface, one end of which is electrically connected to and fixed to the electrodes of the substrate, and which is upright with respect to the substrate, and has a force in the axial direction. It has a large number of small wire rod pieces that can elastically buckle when actuated, and through holes arranged in an array corresponding to the array of the electrodes of the object to be measured, and the through holes are the wire rods. The small piece is fitted with a portion near the one end which is electrically connected and fixed to the electrode of the substrate, and this portion is positioned so as to be arranged in an arrangement corresponding to the arrangement of the electrodes of the measured object. A lower plate member to be regulated, a support frame provided on the lower plate member and forming a space between the lower plate member and the upper plate member, and an array corresponding to the array of the electrodes of the object to be measured. Has a through hole arranged in line, and the through hole is located near the upper end of each of the wire rod small pieces. Is provided on the upper side of the support frame in a state in which the tip portion of the portion which is fitted to the above portion and protrudes upward penetrates through the through hole, and each of the plurality of wire rod pieces has its tip portion covered by the above-mentioned covered portion. It consists of an upper plate member that regulates the position so that it is aligned in an array corresponding to the array of electrodes of the measurement object, the tip of the wire rod piece comes into contact with the electrode of the measurement object, and within the space of the wire rod pieces. A contact device, wherein the extending portion is elastically buckled. 15. A substrate having a large number of electrodes on its upper surface, one end of which is electrically connected and fixed to the electrodes of the substrate, and which is upright with respect to the substrate, and has a force in the axial direction. It has a large number of small wire rod pieces that can elastically buckle when actuated, and through holes arranged in an array corresponding to the array of the electrodes of the object to be measured, and the through holes are the wire rods. The small piece is fitted with a portion near the one end which is electrically connected and fixed to the electrode of the substrate, and this portion is positioned so as to be arranged in an arrangement corresponding to the arrangement of the electrodes of the measured object. A lower plate member to be regulated, a support frame provided on the lower plate member and forming a space between the lower plate member and the upper plate member, and an array corresponding to the array of the electrodes of the object to be measured. Has a through hole arranged in line, and the through hole is located near the upper end of each of the wire rod small pieces. Is provided on the upper side of the support frame in a state in which the tip portion of the portion which is fitted to the above portion and protrudes upward penetrates through the through hole, and each of the plurality of wire rod pieces has its tip portion covered by the above-mentioned covered portion. The upper plate member that regulates the position so as to be aligned in an array corresponding to the array of the electrodes of the measurement object, and the soft material filled in the space, and the tip of the wire rod piece is the electrode of the measurement object. And a portion of the wire rod piece penetrating the inside of the soft material is elastically buckled. 16. A substrate having a large number of electrodes on its upper surface, one end of which is electrically connected and fixed to the electrodes of the substrate, and which is upright with respect to the substrate, and has a force in the axial direction. It has a large number of small wire rod pieces that can elastically buckle when actuated, and through holes arranged in an array corresponding to the array of the electrodes of the object to be measured, and the through holes are the wire rods. The small pieces are provided in such a state that they are fitted to a portion near the upper end and the tip portions of the portions projecting upward penetrate through the through holes and project from the plurality of wire rod small pieces. It consists of an upper plate member that regulates the position so that it is aligned in an array corresponding to the array of electrodes of the object to be measured, the tip of the wire rod small piece contacts the electrode of the object to be measured, The part below the side plate member is elastically buckled. Contact device according to claim. 17. A substrate having a large number of electrodes on an upper surface thereof and a positioning frame fixed to the upper surface, and a contactor assembly, wherein the contactor assembly comprises a soft sheet. A large number of wire rod small pieces that penetrate the soft sheet and are supported in the central portion in the lengthwise direction and elastically buckle when an axial force acts, and the object to be measured. The through holes are arranged in an array corresponding to the array of the electrode of the object, and the through holes are fitted to the portions of the wire rod pieces protruding above the soft sheet, and protrudes upward. Is provided on the upper side of the soft sheet in a state in which the tip portion of the portion protruding through the through hole protrudes, and each of the plurality of wire rod small pieces is arranged in the electrode array of the object to be measured. The upper plate member that regulates the position so as to line up in a corresponding array, and the above It has through-holes arranged in an array corresponding to the array of electrodes of the object, and the through-holes are fitted to the portions of the wire rod pieces protruding below the soft sheet, The lower end portion of the protruding portion is provided on the lower side of the soft sheet in a state of protruding through the through hole, and each of the plurality of wire rod pieces has a lower end portion of the electrode of the measured object. It is composed of a lower plate member that is positionally regulated so as to be arranged in an array corresponding to the array, the contact assembly is fitted in the positioning frame, and the lower end of the wire rod piece is attached to the electrode of the substrate. A contact characterized in that the contact is made, and the tip of the wire rod piece comes into contact with the electrode of the object to be measured, and the central portion in the lengthwise direction of the wire rod piece buckles elastically. Child device. 18. A contact device according to any one of claims 12 to 17, a motherboard replaceably attached to the contact device, and a test electrically connected to the motherboard. A test method characterized in that a test is performed using the device body. 19. A plurality of wire-shaped connecting members, the upper ends of which are brought into contact with and electrically connected to external terminals provided on a semiconductor device to be tested, and the connecting members are fixed by fixing the connecting members. A support member made of an insulating member that supports the external terminal in a standing state at a position corresponding to the position where the external terminal is provided, and an insertion hole through which the connection member is inserted are provided, and are electrically connected to the connection member. A test jig for a semiconductor device, comprising: a wiring board having a connection terminal portion and a lead-out wiring for drawing the connection terminal portion to the outside. 20. The semiconductor device test jig according to claim 19, wherein a glass epoxy substrate, a ceramic substrate, or a polyimide film substrate is used as a base material of the wiring substrate. Test jig. 21. The test jig for a semiconductor device according to claim 19, wherein a plurality of the wiring boards are arranged in a stacked state. 22. The test jig for a semiconductor device according to claim 21, wherein an insulating member through which the connecting member is inserted is interposed between the plurality of wiring boards. . 23. The test jig for a semiconductor device according to claim 19, wherein the support member is made of an elastic material. 24. The test jig for a semiconductor device according to claim 19, wherein the portion of the connection member protruding from the wiring board is electrically connected to the connection terminal portion. A test jig for a semiconductor device, in which members are provided. 25. The semiconductor device test jig according to claim 21, wherein a means for electrically connecting the plurality of wiring boards arranged in a stacked state is a TAB (Tape Automated Bonding) method, a bump method, Alternatively, a test jig for a semiconductor device characterized by using either a wire method or a wire method. 26. The test jig for a semiconductor device according to claim 19, which is formed on the wiring board as a means for electrically connecting a mother board mounted during a test and the wiring board. A test jig for a semiconductor device, characterized in that a pin-shaped terminal is provided in the formed insertion hole so as to be connected to the lead wiring, and the pin-shaped terminal is electrically connected to the motherboard. 27. The test jig for a semiconductor device according to claim 19, wherein the wiring board is used as a means for electrically connecting a mother board mounted during a test and the wiring board. A semiconductor device test jig characterized in that it is electrically connected directly to a mother board. 28. The test jig for a semiconductor device according to claim 19, wherein a plurality of the semiconductor devices can be arranged. 29. The test jig for a semiconductor device according to claim 19, wherein the connection member, the support member, and the wiring board are housed in a socket, and a lid body of the socket is closed. By doing so, the semiconductor device test jig is configured to press the semiconductor device toward the connection member.