JPH0910712A - Method and device for wet treatment - Google Patents

Method and device for wet treatment

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Publication number
JPH0910712A
JPH0910712A JP18489295A JP18489295A JPH0910712A JP H0910712 A JPH0910712 A JP H0910712A JP 18489295 A JP18489295 A JP 18489295A JP 18489295 A JP18489295 A JP 18489295A JP H0910712 A JPH0910712 A JP H0910712A
Authority
JP
Japan
Prior art keywords
ozone
water
rare gas
treatment method
wet treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18489295A
Other languages
Japanese (ja)
Other versions
JP3487526B2 (en
Inventor
Tadahiro Omi
忠弘 大見
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Individual
Original Assignee
Individual
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Filing date
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Priority to JP18489295A priority Critical patent/JP3487526B2/en
Publication of JPH0910712A publication Critical patent/JPH0910712A/en
Application granted granted Critical
Publication of JP3487526B2 publication Critical patent/JP3487526B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: To provide a wet treatment method and a wet treatment device which minimizes the consumptions chemicals and ultrapure water, can treat a waste liquid easily without needing a high temperature process, and also can remove hydrocarbons at an extremely high efficiency. CONSTITUTION: This wet treatment method is to treat a component part to be treated in a solution such as a semiconductor substrate, a glass substrate, an electronic part or a part for a manufacturing device for these component parts, using ultrapure water containing ozone or together with a trace of rare gas. In addition, the component parts are treated in a solution with a concurrent action to irradiate them with an ultrasonic wave at 20kHz or higher.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、例えば半導体基板ある
いは液晶表示装置用ガラス基板のような極めて清浄な表
面を得ることが求められ、特に室温で完全なハイドロカ
ーボンフリー表面を得る事が求められる、電子部品等の
被処理物のウェット処理方法及び処理装置に関する。
BACKGROUND OF THE INVENTION The present invention is required to obtain an extremely clean surface such as a semiconductor substrate or a glass substrate for a liquid crystal display device, and particularly to obtain a completely hydrocarbon-free surface at room temperature. The present invention relates to a wet processing method and a processing apparatus for an object to be processed such as an electronic component.

【0002】[0002]

【従来の技術】従来、上記被ウエット処理物の洗浄方法
としては、RCA洗浄方法、超音波を照射しながら
行うRCA洗浄方法が知られている。しかし、上記及
びの洗浄方法には、次ぎのような問題がある。薬品及
び超純水の使用量が多い。
2. Description of the Related Art Conventionally, as a method for cleaning the above-mentioned object to be wet-processed, an RCA cleaning method and an RCA cleaning method which is performed while irradiating ultrasonic waves are known. However, the above cleaning methods and have the following problems. A large amount of chemicals and ultrapure water are used.

【0003】高温プロセスになってしまう。廃液処理が
困難である。ハイドロカーボン除去が困難である。一
方、ハイドロカーボンの除去にはAPMやSPMが使用
されてきていたが、完全なハイドロカーボン除去は不可
能であった。従来技術では、高温の熱酸化を行っていた
ため、多少残っていたハイドロカーボンも高温の熱酸化
工程でCO2に分解されて問題は表面化しなかったが、
低温プロセスがどんどん導入されるにつれてハイドロカ
ーボン汚染がますますクローズアップされてきている。
This results in a high temperature process. Waste liquid treatment is difficult. It is difficult to remove hydrocarbons. On the other hand, although APM and SPM have been used for removing hydrocarbons, complete removal of hydrocarbons was impossible. In the prior art, since high-temperature thermal oxidation was performed, some residual hydrocarbons were decomposed into CO 2 in the high-temperature thermal oxidation process and the problem did not surface.
Hydrocarbon pollution is becoming more and more focused as low temperature processes are increasingly introduced.

【0004】又、従来からメガソニックに代表される超
音波が、パーティクル除去の目的で多用されてきていた
が、超音波パワーを上げるとパーティクルの除去効果は
向上するが、超音波の持つ物理的力(キャビテーシヨン
発生に伴う衝撃波や加速度)により、デバイスパターン
ヘの損傷があったので、実際にはパワーを下げて使用し
ている。パワーを下げるとハイドロカーボン除去率は悪
くなる。
Conventionally, ultrasonic waves typified by megasonics have been widely used for the purpose of removing particles. However, if ultrasonic power is increased, the effect of removing particles is improved, but the physical properties of ultrasonic waves are increased. The device pattern was damaged due to force (shock wave and acceleration due to cavitation generation), so the power is actually reduced. The lower the power, the worse the removal rate of hydrocarbons.

【0005】[0005]

【発明が解決しようとする課題】本発明は、薬品及び超
純水の使用量が少なく、高温プロセスを経ることなく、
廃液処理が容易であり、しかもハイドロカーボン除去率
が極めて高いウエット処理方法及びウエット処理装置を
提供することを目的とする。
DISCLOSURE OF THE INVENTION The present invention uses a small amount of chemicals and ultrapure water and does not undergo a high temperature process.
It is an object of the present invention to provide a wet treatment method and a wet treatment apparatus that can easily treat a waste liquid and have an extremely high hydrocarbon removal rate.

【0006】[0006]

【課題を解決するための手段】本発明の要旨は、半導体
基板、ガラス基板、電子部品およびこれらの製造装置部
品等の被ウエット処理物を、水中にオゾン又はオゾンと
微量の希ガスを含有する超純水で処理する方法であっ
て、これに20kHz以上の超音波を照射しながら被処
理物をウエット処理することを特微とするウエット処理
方法に存在する。
SUMMARY OF THE INVENTION The gist of the present invention is that a wet-processed object such as a semiconductor substrate, a glass substrate, an electronic component and a component for manufacturing these components contains ozone or ozone and a trace amount of a rare gas in water. There is a method of treating with ultrapure water, which is characterized in that the object to be treated is wet-treated while irradiating it with ultrasonic waves of 20 kHz or more.

【0007】また、本発明の他の要旨は、少なくとも水
中の不純物を除去するための超純水製造装置と、超純水
中にオゾン又はオゾンと希ガスを溶解させるためのオゾ
ン又はオゾンと希ガス溶解手段と、溶存オゾン又はオゾ
ンと希ガス溶存水に20kHZ以上の超音波を照射する
ための超音波照射手段と、超音波を照射した溶存オゾン
又はオゾンと希ガス水で被洗浄物をウェット処理するた
めのウェット処理部、及び大気中からの酸素、窒素、炭
酸等のガス成分混入を防ぐためのシール構造と、それら
を接続する配管系とで構成されたことを特徴とするウェ
ット処理装置に存在する。
Another aspect of the present invention is an ultrapure water producing apparatus for removing at least impurities in water, and ozone or ozone and a rare gas for dissolving ozone or ozone and a rare gas in the ultrapure water. Gas dissolving means, ultrasonic irradiating means for irradiating dissolved ozone or ozone and rare gas dissolved water with ultrasonic waves of 20 kHZ or more, and wet object to be cleaned with ultrasonic wave irradiating dissolved ozone or ozone and rare gas water A wet processing unit comprising a wet processing unit for processing, a seal structure for preventing gas components such as oxygen, nitrogen and carbon dioxide from entering the atmosphere, and a pipe system connecting them. Exists in.

【0008】[0008]

【作用】オゾン超純水にメガソニックを照射すると、F
T−lRでの検出限界までのカーボン除去が可能であ
る。更にオゾン超純水中にHe,Ne,Ar,Kr,X
eの希ガスを微量混入すると水素ラジカルの発生に伴
い、大幅なハイドロカーボン除去効果が得られる。
[Function] When ultra-pure ozone water is irradiated with megasonics, F
It is possible to remove carbon up to the detection limit with T-1R. He, Ne, Ar, Kr, X in ozone ultrapure water
When a small amount of the rare gas of e is mixed, a great effect of removing hydrocarbon is obtained along with the generation of hydrogen radicals.

【0009】従って、パーティクルが除去できてデバイ
スに損傷を与えない最低限度まで超音波パワーを下げて
使用しても、室温、省薬品、省超純水で完全なハイドロ
カーボン除去が可能である。希ガス添加による、超音波
エネルギー利用の効率が向上する。更に大幅な水素ラジ
カルの発生、及び単なる振動効果に加え水自身のクラス
ターが細かく切れるため、水の粘度も小さくなり、チッ
プの微細構造箇所にまでの効果向上)メタルに関しても
オゾン自身の除去効果があることが分かっているが、更
にメガソニックに代表される超音波ヲを併用することに
より、除去効果の向上がある。
Therefore, even if the ultrasonic power is lowered to the minimum level at which particles can be removed and the device is not damaged, it is possible to completely remove hydrocarbons at room temperature, chemicals and ultrapure water. The efficiency of ultrasonic energy utilization is improved by adding a rare gas. Furthermore, in addition to the significant generation of hydrogen radicals and the simple vibration effect, the cluster of water itself is broken into smaller pieces, which reduces the viscosity of water and improves the effect up to the microstructured parts of the chip. Although it is known that the removal effect can be improved by additionally using ultrasonic waves represented by megasonics.

【0010】[0010]

【発明の効果】本発明によれば、次ぎの諸々の効果が達
成される。薬品及び超純水の使用量が少ない。低温プロ
セスである。廃液処理が容易である。
According to the present invention, the following various effects are achieved. The amount of chemicals and ultrapure water used is small. It is a low temperature process. Waste liquid treatment is easy.

【0011】ハイドロカーボン除去が極めて効率的にで
きる。
Hydrocarbons can be removed very efficiently.

Claims (21)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板、ガラス基板、電子部品およ
びこれらの製造装置部品等の被ウエット処理物を、水中
にオゾン又はオゾンと微量の希ガスを含有する超純水で
処理する方法であって、これに20kHz以上の超音波
を照射しながら被処理物をウエット処理することを特微
とするウエット処理方法。
1. A method for treating an object to be wet-processed such as a semiconductor substrate, a glass substrate, an electronic component and a component for manufacturing these thereof with ultrapure water containing ozone or ozone and a trace amount of a rare gas in water. A wet treatment method characterized by subjecting an object to be treated to wet treatment while irradiating ultrasonic waves of 20 kHz or higher.
【請求項2】 前記溶存オゾン水の溶存オゾン濃度が2
ppm以上であることを特徴とする請求項(1)記載の
ウエット処理方法。
2. The dissolved ozone concentration of the dissolved ozone water is 2
The wet treatment method according to claim 1, which is at least ppm.
【請求項3】 前記溶存希ガス水の原水が、少なくとも
1種類の希ガスを少なくとも0.01ppm以上溶解し
たことを特徴とする請求項(1)〜(2)記載のウエッ
ト処理方法。
3. The wet treatment method according to claim 1, wherein the raw water of the dissolved rare gas water dissolves at least 0.01 ppm or more of at least one kind of rare gas.
【請求項4】 超純水中にオゾンを溶解する手段が、該
溶存オゾン水の原水を電気分解することによって該原水
中のオゾンイオンを還元してオゾンを生成せしめ、同時
に該原水中にオゾンを溶存せしめる手段によるものであ
ることを特微とする請求項(1)〜(3)記載のウエッ
ト処理方法。
4. A means for dissolving ozone in ultrapure water reduces the ozone ions in the raw water by electrolyzing the raw water of the dissolved ozone water to generate ozone, and at the same time, ozone in the raw water. The wet treatment method according to any one of claims (1) to (3), wherein the wet treatment method is performed by a means for dissolving.
【請求項5】 超純水中にオゾン又はオゾンと希ガスを
溶解する手段が、オゾンガス又はオゾンと希ガスを系外
からガス透過膜を介して注入してオゾン又はオゾンと希
ガスを溶存せしめる手段によるものであることを特徴と
する請求項(1)〜(4)記載のウエット処理方法。
5. A means for dissolving ozone or ozone and rare gas in ultrapure water injects ozone gas or ozone and rare gas from outside the system through a gas permeable film to dissolve ozone or ozone and rare gas. The method according to any one of claims (1) to (4), characterized in that it is by means of means.
【請求項6】 超純水中にオゾン又はオゾンと希ガスを
溶解する手段が、オゾンガス又はオゾンと希ガスを系外
から該原水中にバブリングすることで溶存せしめる手段
によるものであることを特徴とする請求項(1)〜
(5)記載のウエット処理方法。
6. The means for dissolving ozone or ozone and a rare gas in ultrapure water is a means for dissolving ozone gas or ozone and a rare gas by bubbling from outside the system into the raw water. Claim (1) to
(5) The wet treatment method described in
【請求項7】 超純水中にオゾン又はオゾンと希ガスを
溶解する手段が、該溶存オゾン水の原水を電気分解する
ことによって該原水中のオゾンイオンを還元してオゾン
を生成せしめ、同時に該原水中にオゾンを溶存せしめる
手段によるものであることを特徴とする請求項(1)〜
(6)記載のウエット処理方法。
7. A means for dissolving ozone or ozone and a noble gas in ultrapure water electrolyzes raw water of the dissolved ozone water to reduce ozone ions in the raw water to generate ozone, and at the same time. A means for dissolving ozone in the raw water is provided, wherein the method is characterized in that (1) to
(6) The wet treatment method described in
【請求項8】 前記溶存オゾン又はオゾンと希ガス水の
原水が、希ガス以外の溶存ガスを少なくとも10ppm
以下とするように脱ガスされた水であることを特徴とす
る請求項(1)〜(7)記載のウエット処理方法。
8. The dissolved ozone or the raw water of ozone and rare gas water contains at least 10 ppm of dissolved gas other than rare gas.
The wet treatment method according to any one of claims 1 to 7, wherein the water is degassed as described below.
【請求項9】 前記溶存オゾン又はオゾンと希ガス水の
原水中の、希ガス以外の溶存ガスを脱ガスする方法が、
ガス透過膜を介して真空脱ガスする方法であることを特
徴とする請求項(1)〜(8)記載のウエット処理方
法。
9. A method of degassing a dissolved gas other than a rare gas in the raw water of the dissolved ozone or ozone and a rare gas water,
The wet treatment method according to any one of claims 1 to 8, which is a method of degassing under vacuum through a gas permeable film.
【請求項10】 前記溶存ガスが酸素であることを特徴
とする請求項(1)〜(9)記載のウエット処理方法。
10. The wet processing method according to any one of claims 1 to 9, wherein the dissolved gas is oxygen.
【請求項11】 前記溶存ガスが窒素であることを特徴
とする請求項(1)〜(10)記載のウエット処理方
法。希ガスの種類
11. The wet treatment method according to any one of claims 1 to 10, wherein the dissolved gas is nitrogen. Noble gas type
【請求項12】 前記希ガスのうちの少なくとも1種類
が、Xeであることを特徴とする請求項(1)〜(1
1)記載のウエット処理方法。
12. The method according to claim 1, wherein at least one of the rare gases is Xe.
1) The wet treatment method described above.
【請求項13】 前記希ガスのうちの少なくとも1種類
が、Κrであることを特徴とする請求項(1)〜(1
1)記載のウエット処理方法。
13. The method according to claim 1, wherein at least one kind of the rare gas is Kr.
1) The wet treatment method described above.
【請求項14】 前記希ガスのうちの少なくとも1種類
が、Arであることを特徴とする請求項(1)〜(1
1)記載のウエット処理方法。
14. The (1) to (1), wherein at least one kind of the rare gas is Ar.
1) The wet treatment method described above.
【請求項15】 前記希ガスのうちの少なくとも1種類
が、Neであることを特徴とする請求項(1)〜(1
1)記載のウエット拠理方法。
15. The method according to claim 1, wherein at least one kind of the rare gas is Ne.
1) The wet management method described.
【請求項16】 前記希ガスのうちの少なくとも1種類
が、Heであることを特徴とする請求項(1)〜(1
1)記載のウエット処理方法及び処理装置。超音波照射
手段
16. The method according to claim 1, wherein at least one kind of the rare gases is He.
1) The wet processing method and processing apparatus according to 1). Ultrasonic irradiation means
【請求項17】 前記ウエット処理方法が、該溶存オゾ
ン又はオゾンと希ガス水を貯留または流通させる容器内
に被ウエット処理物を浸漬した状態で行うウエット処理
方法であって、前記超音波照射手段が、該容器内に該被
ウエット処理物を浸漬した状態で該溶存オゾン又はオゾ
ンと希ガス水に照射することを特徴とする請求項(1)
〜(16)記載のウエット処理方法。
17. The wet treatment method is a wet treatment method carried out in a state in which a material to be wetted is immersed in a container for storing or circulating the dissolved ozone or ozone and rare gas water, and the ultrasonic wave irradiating means. Irradiating the dissolved ozone or ozone and rare gas water in a state where the article to be wet treated is immersed in the container.
~ The wet treatment method according to (16).
【請求項18】 前記ウエット処理方法が、該溶存オゾ
ン又はオゾンと希ガス水を所定のノズルから被ウエット
処理物に向けて連統的に噴射あるいは滴下して行うウエ
ット処理方法であって、前記超音波照射手段が、前記所
定のノズルの少なくとも上流部の配管系の一部において
該溶存オゾン又はオゾンと希ガス水に照射することを特
徴とする請求項(1)〜(16)記載のウエット処理方
法及び処理装置。
18. The wet treatment method is a wet treatment method in which the dissolved ozone or ozone and rare gas water are continuously sprayed or dropped from a predetermined nozzle toward the object to be wet treated. The wet according to any one of claims 1 to 16, wherein the ultrasonic wave irradiating unit irradiates the dissolved ozone or ozone and the rare gas water in at least a part of the piping system at least upstream of the predetermined nozzle. Processing method and processing apparatus.
【請求項19】 前記ウエット処理方法が、該溶存オゾ
ン又はオゾンと希ガス水を貯留または流通させる容器内
に被ウエット処理物を浸漬した状態で行うウエット処理
方法であって、前記超音波照射手段が、該容器内に該被
ウェット処理物を浸漬した状態で該溶存オゾン又はオゾ
ンと希ガス水に照射することを特徴とすろ請求項(1)
〜(16)記載のウエット処理方法。
19. The wet treatment method is a wet treatment method performed in a state in which a material to be wetted is immersed in a container for storing or circulating the dissolved ozone or ozone and rare gas water, wherein the ultrasonic wave irradiating means is used. Irradiating the dissolved ozone or ozone and rare gas water with the article to be wetted immersed in the container.
~ The wet treatment method according to (16).
【請求項20】 前記ウェット処理方法が、該溶存オゾ
ン又はオゾンと希ガス水を所定のノズルから被ウェット
処理物に向けて連続的に噴射あるいは滴下して行うウェ
ット処理方法であって、前記超音波は、前記所定のノズ
ルの少なくとも上流部の配管系の一部において該溶存オ
ゾン又はオゾンと希ガス水に照射することを特徴とする
請求項(1)〜(16)記載のウェット処理方法及び処
理装置。
20. The wet treatment method is a wet treatment method in which the dissolved ozone or ozone and rare gas water are continuously jetted or dropped from a predetermined nozzle toward a target object to be treated, The wet treatment method according to any one of claims 1 to 16, wherein the sound wave irradiates the dissolved ozone or ozone and noble gas water in at least a part of the piping system at least upstream of the predetermined nozzle. Processing equipment.
【請求項21】 少なくとも水中の不純物を除去するた
めの超純水製造装置と、超純水中にオゾン又はオゾンと
希ガスを溶解させるためのオゾン又はオゾンと希ガス溶
解手段と、溶存オゾン又はオゾンと希ガス溶存水に20
kHZ以上の超音波を照射するための超音波照射手段
と、超音波を照射した溶存オゾン又はオゾンと希ガス水
で被洗浄物をウェット処理するためのウェット処理部、
及び大気中からの酸素、窒素、炭酸等のガス成分混入を
防ぐためのシール構造と、それらを接続する配管系とで
構成されたことを特徴とするウェット処理装置。
21. An apparatus for producing ultrapure water for removing at least impurities in water, ozone or ozone and rare gas dissolving means for dissolving ozone or ozone and a rare gas in the ultrapure water, dissolved ozone or 20 for ozone and rare gas dissolved water
an ultrasonic wave irradiating means for irradiating an ultrasonic wave of kHZ or higher, and a wet processing part for performing a wet process on an object to be cleaned with dissolved ozone or ozone and an rare gas water irradiated with the ultrasonic wave,
And a seal structure for preventing gas components such as oxygen, nitrogen, and carbon dioxide from entering the atmosphere, and a pipe system for connecting them.
JP18489295A 1995-06-28 1995-06-28 Wet processing method and processing apparatus Expired - Lifetime JP3487526B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18489295A JP3487526B2 (en) 1995-06-28 1995-06-28 Wet processing method and processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18489295A JP3487526B2 (en) 1995-06-28 1995-06-28 Wet processing method and processing apparatus

Publications (2)

Publication Number Publication Date
JPH0910712A true JPH0910712A (en) 1997-01-14
JP3487526B2 JP3487526B2 (en) 2004-01-19

Family

ID=16161150

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
US6129098A (en) * 1997-08-29 2000-10-10 Kabushiki Kaisha Ultraclean Technology Research Institute Apparatus for injecting constant quantitative chemicals and a method thereof
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US6129098A (en) * 1997-08-29 2000-10-10 Kabushiki Kaisha Ultraclean Technology Research Institute Apparatus for injecting constant quantitative chemicals and a method thereof
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species

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