JPH0885878A - Production of tin sulfide film - Google Patents
Production of tin sulfide filmInfo
- Publication number
- JPH0885878A JPH0885878A JP24830894A JP24830894A JPH0885878A JP H0885878 A JPH0885878 A JP H0885878A JP 24830894 A JP24830894 A JP 24830894A JP 24830894 A JP24830894 A JP 24830894A JP H0885878 A JPH0885878 A JP H0885878A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- tin sulfide
- film
- soln
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemically Coating (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、大面積の太陽電池ある
いは発熱用素子等に利用するための硫化スズ膜の製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a tin sulfide film for use in a large area solar cell, a heat generating element or the like.
【０００２】[0002]
【従来の技術】従来の無電解メッキ法により硫化物膜を
基体上に形成する方法（P.K.Nair他,J.Electrochem.140
(1993)など）は、チオアセトアミド１モル溶液１６ｍ
ｌ、４規定アンモニア水２０ｍｌ、５０％トリエタノー
ルアミン溶液２５ｍｌ、および塩化第一スズ二水塩（Ｓ
ｎＣｌ2 ・２Ｈ2 Ｏ）２グラムをアセトン１０ｍｌに溶
かした溶液をメッキ溶液とし、メッキ溶液温度を７５℃
に制御して、ガラス基板を５時間浸漬して硫化スズ膜を
成膜するものであった。2. Description of the Related Art A method of forming a sulfide film on a substrate by a conventional electroless plating method (PKNair et al., J. Electrochem. 140
(1993), etc. is 16m of a 1 molar solution of thioacetamide.
1, 4N ammonia water 20 ml, 50% triethanolamine solution 25 ml, and stannous chloride dihydrate (S
nCl 2 · 2H 2 O) 2g in 10ml acetone was used as the plating solution, and the plating solution temperature was 75 ° C.
The glass substrate was soaked for 5 hours to form a tin sulfide film.
【０００３】しかしながら、この方法では、メッキ溶液
中の溶存酸素により金属スズが酸化され、硫化スズ膜中
に酸化第一スズ（ＳｎＯ）が生成しやすいため、酸化第
一スズが不純物となり、デバイス特性を劣化させること
となり、また、この方法で成膜された硫化スズ膜は膜質
が粗く、均一な膜にはなりにくいという問題があった。However, according to this method, metallic tin is oxidized by dissolved oxygen in the plating solution, and stannous oxide (SnO) is easily generated in the tin sulfide film, so that stannous oxide becomes an impurity, resulting in device characteristics. In addition, the tin sulfide film formed by this method has a problem that the film quality is rough and it is difficult to form a uniform film.
【０００４】[0004]
【発明が解決しようとする課題】すなわち、従来の方法
ではメッキ溶液中に溶存酸素が存在するため、硫化スズ
膜の半導体特性に影響を与える酸化第一スズの生成を抑
制することはできず、酸化第一スズが微量に混じった硫
化スズ膜の成膜ができるだけであった。このため、上記
の課題として、メッキ浴中の溶存酸素を取り除くには、
銅やニッケルの無電解メッキの際に用いられるホルムア
ルデヒド、ヒドラジンや次亜リン酸塩等の還元剤の添加
が有効と考えられる。That is, in the conventional method, since dissolved oxygen exists in the plating solution, it is not possible to suppress the formation of stannous oxide, which affects the semiconductor characteristics of the tin sulfide film. It was only possible to form a tin sulfide film containing a small amount of stannous oxide. Therefore, as the above problem, in order to remove the dissolved oxygen in the plating bath,
It is considered effective to add a reducing agent such as formaldehyde, hydrazine or hypophosphite, which is used in electroless plating of copper or nickel.
【０００５】そこで、溶存酸素の除去、膜質の改善のた
めに、ホルムアルデヒド、ヒドラジン、ＮａＢＨ4 、Ｎ
ａＨ2 ＰＯ2 、ＫＢＨ4 、ＫＨ2 ＰＯ2 といった各種還
元剤の与える影響を調査した。 さらに、還元剤の
添加量、及びメッキ浴温度並びに浸漬時間等について検
討し硫化スズ膜を成膜についての製造方法を確立するに
至った。Therefore, in order to remove dissolved oxygen and improve the film quality, formaldehyde, hydrazine, NaBH 4 , N
The effects of various reducing agents such as aH 2 PO 2 , KBH 4 and KH 2 PO 2 were investigated. Furthermore, the amount of the reducing agent added, the plating bath temperature, the immersion time, etc. were examined to establish a manufacturing method for forming the tin sulfide film.
【０００６】[0006]
【課題を解決するための手段】本発明は、無電解メッキ
法により硫化スズ膜を形成するに際し、Ｓ2-濃度：
０．．０５〜０．２５モル／ｌ、５０％トリエタノール
アミン溶液：１００〜４００ｍｌ／ｌ、ＮＨ4 + イオン
濃度：０．０４〜０．１モル／ｌ、その他溶媒を含む溶
液に、塩化第一スズ２０〜６０グラム／ｌを加えて、蒸
留水で１．５〜２．５倍に希釈した混合溶液に、さらに
０．０２〜０．０３モル／ｌの範囲でホルムアルデヒド
溶液を添加したメッキ溶液を作製し、該メッキ溶液温度
を８０〜８５℃、浸漬時間を４〜６時間の範囲で硫化ス
ズ膜を成膜するものである。According to the present invention, when a tin sulfide film is formed by an electroless plating method, the S 2 -concentration:
0. ． 05-0.25 mol / l, 50% triethanolamine solution: 100-400 ml / l, NH 4 + ion concentration: 0.04-0.1 mol / l, stannous chloride in a solution containing other solvent A plating solution prepared by adding 20 to 60 g / l and diluting 1.5 to 2.5 times with distilled water and further adding a formaldehyde solution in the range of 0.02 to 0.03 mol / l was added. A tin sulfide film is formed by forming the plating solution at a temperature of 80 to 85 ° C. and an immersion time of 4 to 6 hours.
【０００７】メッキ溶液としては、チオアセトアミド１
モル溶液５〜２５ｍｌ、アンモニア水（約４規定）１０
〜２５ｍｌ、５０％トリエタノールアミン溶液１０〜４
０ｍｌ、アセトン９．５〜７ｍｌを混合した１００ｍｌ
の溶液に塩化第一スズ２〜６グラムを加えて、蒸留水で
希釈し２００ｍｌとした混合溶液に、さらに０．０２〜
０．０３モルの範囲でホルムアルデヒド溶液を添加した
ものが好ましい具体的組成である。As a plating solution, thioacetamide 1
Molar solution 5 to 25 ml, ammonia water (about 4N) 10
~ 25 ml, 50% triethanolamine solution 10-4
100 ml which mixed 0 ml and acetone 9.5-7 ml
2 to 6 g of stannous chloride was added to the solution of, and the mixture solution was diluted with distilled water to 200 ml to further add 0.02 to
A preferable specific composition is one in which the formaldehyde solution is added in the range of 0.03 mol.
【０００８】本発明においては、メッキ溶液中の溶存酸
素による酸化第一スズ生成から発生する硫化スズ膜中の
不純物の問題、また、成膜された硫化スズ膜の膜質の問
題を解決するために、０．０２〜０．０３モルの範囲で
ホルムアルデヒドを添加することを特徴とする。以下、
その検討結果を示す。In the present invention, in order to solve the problem of impurities in the tin sulfide film generated from the production of stannous oxide by the dissolved oxygen in the plating solution, and the problem of the film quality of the formed tin sulfide film. Formaldehyde is added in the range of 0.02 to 0.03 mol. Less than,
The examination result is shown.
【０００９】溶存酸素の除去、膜質の改善効果を検討す
るため、チオアセトアミド１モル溶液１５ｍｌ、アンモ
ニア水（約４規定）１８ｍｌ、５０％トリエタノールア
ミン溶液２５ｍｌ、アセトン８ｍｌを混合したメッキ溶
液に、塩化第一スズ４グラムを加えて、蒸留水で希釈し
２００ｍｌとした混合溶液に、各種還元剤として、ホル
ムアルデヒド、ヒドラジン、ＮａＢＨ4 、ＮａＨ2 ＰＯ
2 、ＫＢＨ4 、ＫＨ2ＰＯ2 を０．０２モル添加したメ
ッキ溶液を作製し、メッキ溶液温度を８２℃に制御し
た。In order to examine the effect of removing dissolved oxygen and improving the film quality, a plating solution prepared by mixing 15 ml of thioacetamide 1 mol solution, 18 ml of ammonia water (about 4N), 25 ml of 50% triethanolamine solution, and 8 ml of acetone was added. Add 4 g of stannous chloride and dilute it with distilled water to 200 ml. Add various form reducing agents such as formaldehyde, hydrazine, NaBH 4 and NaH 2 PO.
A plating solution was prepared by adding 0.02 mol of 2 , KBH 4 and KH 2 PO 2 and the plating solution temperature was controlled at 82 ° C.
【００１０】この結果を、表１に示す。表中の評価は、
溶存酸素量が０．５ｐｐｍ以下になったもの（○印）、
２ｐｐｍ程度に減少したもの（△印）、添加効果がなか
ったもの（×印）とした。また、膜質の評価は走査型電
子顕微鏡（ＳＥＭ）で行い、還元剤添加なしで成膜した
膜と比較して、粗さが減少したもの（○印）、粗さに変
化のないもの（−印）、粗さが増加したもの（×印）と
した。The results are shown in Table 1. The evaluation in the table is
Dissolved oxygen amount is 0.5 ppm or less (marked with ○),
The amount decreased to about 2 ppm (marked with Δ) and the one having no effect of addition (marked with x). In addition, the film quality was evaluated with a scanning electron microscope (SEM), and the roughness was reduced (○) compared to the film formed without adding a reducing agent, and the roughness was not changed (- (Marked) and those with increased roughness (marked x).
【００１１】[0011]
【表１】 [Table 1]
【００１２】この結果より、均一、かつ、不純物のない
硫化スズ膜を成膜するためには適切な濃度のホルムアル
デヒドを添加する必要があるといえる。ホルムアルデヒ
ドの添加量としては、効果発現のためには、少なくとも
０．０２モル必要であり、０．０３モル以下とする必要
がある。その詳細な検討結果については、実施例で示
す。From this result, it can be said that formaldehyde of an appropriate concentration must be added in order to form a uniform and impurity-free tin sulfide film. The amount of formaldehyde added is at least 0.02 mol and needs to be 0.03 mol or less in order to exert the effect. The detailed examination results will be shown in Examples.
【００１３】なお、本発明においては、メッキ硫化スズ
膜中の不純物生成を抑制することによって、該硫化スズ
膜の電気特性を向上することができる。その膜厚は０．
５〜５μｍであることが好ましく、メッキ時間、メッキ
槽温度およびメッキ溶液に添加するホルムアルデヒド量
の３つのメッキ条件を調節することによって均質かつ不
純物のない硫化スズ膜を形成することができる。In the present invention, the electrical characteristics of the tin sulfide film can be improved by suppressing the generation of impurities in the plated tin sulfide film. The film thickness is 0.
The thickness is preferably 5 to 5 μm, and a uniform and impurity-free tin sulfide film can be formed by adjusting three plating conditions such as the plating time, the plating bath temperature, and the amount of formaldehyde added to the plating solution.
【００１４】[0014]
【作用】本発明においては、従来のメッキ溶液の調合組
成にホルムアルデヒド０．０１〜０．０３モル添加する
ことにより改良し、硫化スズ膜中に不純物（酸化第一ス
ズ）を生成させることなく、硫化スズ膜を成膜すること
できる。In the present invention, 0.01 to 0.03 mol of formaldehyde was added to the conventional composition of the plating solution to improve the composition, and the impurities (stannous oxide) were not formed in the tin sulfide film. A tin sulfide film can be formed.
【００１５】[0015]
【実施例】図１に示すメッキ槽１に基体支持具２を用い
てガラス基板３をメッキ槽下部に吊るし、メッキ槽１を
加熱するためのヒーター４を用いてメッキ溶液を８０〜
８５℃に加熱し、所定の領域に硫化スズ膜５を無電解メ
ッキ法により０．５〜５．０μｍ形成した。EXAMPLE A glass substrate 3 was hung in the lower part of the plating tank by using a substrate support 2 in the plating tank 1 shown in FIG. 1, and a plating solution of 80 to 80 was prepared by using a heater 4 for heating the plating tank 1.
It was heated to 85 ° C., and the tin sulfide film 5 was formed in a predetermined region by electroless plating to a thickness of 0.5 to 5.0 μm.
【００１６】以下に、硫化スズ膜作製方法をホルムアル
デヒド添加量を変化させた例について、本発明の具体例
として説明する。An example in which the amount of formaldehyde added is changed in the method for producing a tin sulfide film will be described below as a specific example of the present invention.
【００１７】室温でチオアセトアミド１モル溶液１６ｍ
ｌ、４規定アンモニア水２０ｍｌおよび５０％トリエタ
ノールアミン溶液２５ｍｌを混合した溶液を、塩化第一
スズ２グラムをアセトン９ｍｌと蒸留水１ｍｌの混合液
（合計１０ｍｌ）に溶かした溶液に加え、蒸留水で希釈
し２００ｍｌとした溶液をメッキ溶液Ａとする。16 m of 1 molar thioacetamide solution at room temperature
1, a solution of 4N ammonia water 20 ml and 50% triethanolamine solution 25 ml was added to a solution prepared by dissolving 2 g of stannous chloride in a mixture of acetone 9 ml and distilled water 1 ml (total 10 ml), and then adding distilled water. The solution diluted to 200 ml is used as a plating solution A.
【００１８】前記のメッキ溶液Ａに、さらに０．０１〜
０．０５モルの範囲で３５％ホルムアルデヒド溶液を添
加したメッキ溶液を作製し、表２に示すようにメッキ溶
液をホルムアルデヒド添加量に従ってＢ〜Ｅに分類し
た。In addition to the above plating solution A, 0.01 to
35% formaldehyde solution was added in the range of 0.05 mol to prepare a plating solution, and as shown in Table 2, the plating solution was classified into B to E according to the amount of formaldehyde added.
【００１９】[0019]
【表２】 [Table 2]
【００２０】さらに、図１に示すように、メッキ槽１に
基体支持具２を用いてガラス基板３をメッキ槽下部に吊
るし、メッキ槽１を加熱するためのヒーター４を用いて
メッキ溶液を７５、８０、８５、９０℃の４通りの温度
に加熱し、かつ、メッキ溶液に基体を浸漬しメッキする
時間を１〜３、４〜６、７〜９時間の３通りに変化させ
て、ガラス基板の所定の領域に硫化スズ膜４を無電解メ
ッキ法により２．０〜５．０μｍの膜厚で成膜した。作
製した硫化スズ膜は成膜後、室温、空気中で２４時間自
然乾燥させて評価を行った。Further, as shown in FIG. 1, the glass substrate 3 is hung below the plating tank by using the substrate support 2 in the plating tank 1, and the plating solution is heated to 75 by using the heater 4 for heating the plating tank 1. , 80, 85, 90 ° C., and the time for immersing the substrate in the plating solution and plating is changed to 1 to 3, 4 to 6 and 7 to 9 hours. A tin sulfide film 4 having a thickness of 2.0 to 5.0 μm was formed on a predetermined region of the substrate by electroless plating. After the formed tin sulfide film was formed, it was naturally dried in air at room temperature for 24 hours for evaluation.
【００２１】それぞれの条件で成膜したメッキ膜につい
て、成膜できたものについてＸ線回折測定を行い、不純
物の評価を行った。その結果、硫化スズのみの膜につい
てのみ電気測定を行った。これらの結果を表３に示す。
膜質はメッキ膜中に酸化第一スズが存在しておらず、か
つ、比較例と同程度の膜質が得られた硫化スズ膜（△印
をつけたもの）と膜質も向上した硫化スズ膜（◎印）を
Ｘ線回折の結果とＳＥＭ観察から級別した。With respect to the plated films formed under the respective conditions, X-ray diffraction measurement was performed on the formed films to evaluate impurities. As a result, electrical measurement was performed only on the film containing only tin sulfide. Table 3 shows the results.
As for the film quality, stannous oxide was not present in the plating film, and the tin sulfide film (marked with △) and the tin sulfide film with improved film quality (those marked with △) were obtained with the same film quality as the comparative example. The ⊚ mark was classified based on the results of X-ray diffraction and SEM observation.
【００２２】[0022]
【表３】 [Table 3]
【００２３】メッキ溶液Ｃを使用し、メッキ時間４〜６
時間、メッキ溶液温度が７５℃、８５℃のメッキ膜のＸ
線回折の結果をそれぞれ図２、図３に示す。また、高純
度試薬（９９．９９９９％）を用いて真空蒸着法によっ
て作製した硫化スズ膜を用いて測定した電気特性は、比
抵抗１．０×１０3 Ωcm、キャリヤ密度５．３×１０16
cm-3である。電気特性を比較すると、無電解メッキ法で
作製した硫化スズ膜と真空蒸着により作製した膜は、ほ
ぼ同等の電気特性を持った膜ができていることが分か
る。Using plating solution C, plating time 4-6
Time, plating solution temperature 75 ℃, 85 ℃ X of plating film
The results of the line diffraction are shown in FIGS. 2 and 3, respectively. The electrical characteristics measured using a tin sulfide film produced by a vacuum deposition method using a high-purity reagent (99.9999%) are as follows: specific resistance 1.0 × 10 3 Ωcm, carrier density 5.3 × 10 16.
cm -3 . Comparing the electrical characteristics, it can be seen that the tin sulfide film produced by the electroless plating method and the film produced by vacuum evaporation have films having almost the same electrical characteristics.
【００２４】以上の結果から考察すると、メッキ膜が成
膜できる適正なメッキ時間がある理由として、メッキ時
間が短い場合は十分な結晶成長が起こっていないことが
挙げられる。また、メッキ時間が６時間を越えるに従っ
て、ガラス基板上のメッキ膜が溶解し、７時間を越える
と全く成膜できないことが分かった。ホルムアルデヒド
添加量によって硫化スズ膜中の酸化第一スズの量が変化
し、添加量０．０２、０．０３モルで酸化第一スズの析
出はなかった。ホルムアルデヒド添加量が０．０３モル
を越えるに従って、ガラス基板上への成膜量は少なく、
膜厚が不均一な膜になり、０．０５モル添加すると、膜
は形成させず、かつ硫化スズ、酸化第一スズ以外の析出
は見られなくなる。Considering the above results, the reason why there is an appropriate plating time for forming a plating film is that sufficient crystal growth has not occurred when the plating time is short. It was also found that the plating film on the glass substrate was dissolved as the plating time exceeded 6 hours, and that the film could not be formed at all after 7 hours. The amount of stannous oxide in the tin sulfide film changed depending on the amount of formaldehyde added, and stannous oxide did not precipitate at the added amounts of 0.02 and 0.03 mol. As the amount of formaldehyde added exceeds 0.03 mol, the amount of film formation on the glass substrate decreases,
The film becomes non-uniform in thickness, and when 0.05 mol is added, the film is not formed, and precipitation other than tin sulfide and stannous oxide is not seen.
【００２５】これらの結果から明らかなように、当該メ
ッキ溶液に示すようにホルムアルデヒドを０．０２〜
０．０３モル添加し、メッキ溶液温度を８０〜８５℃の
範囲で管理し、４〜６時間メッキすることによって、不
純物（酸化第一スズ）が含まれておらず、かつ、均一な
硫化スズ膜を形成することができる。As is clear from these results, formaldehyde was added in an amount of 0.02% as shown in the plating solution.
By adding 0.03 mol, controlling the plating solution temperature in the range of 80 to 85 ° C., and performing plating for 4 to 6 hours, uniform tin sulfide containing no impurities (stannous oxide) A film can be formed.
【００２６】[0026]
【発明の効果】本発明によれば、硫化スズ膜を均質に成
膜することができ、かつ、硫化スズ膜の電気的特性を支
配する不純物生成を抑制することを可能にし、硫化スズ
膜を利用したデバイスの電気的特性を向上させ、生産効
率をも高めるものである。このため、本発明方法で作製
した硫化スズ膜は、本発明の構成を考慮すれば、均質な
大面積の太陽電池素子として有効となる。According to the present invention, a tin sulfide film can be formed uniformly, and it is possible to suppress the generation of impurities that control the electrical characteristics of the tin sulfide film. It is intended to improve the electrical characteristics of the device used and also increase the production efficiency. Therefore, the tin sulfide film produced by the method of the present invention is effective as a uniform large-area solar cell element in consideration of the configuration of the present invention.
【図１】 メッキ装置の概要図[Figure 1] Schematic diagram of plating equipment
【図２】 本発明の実施例に従って形成した硫化スズ膜
のＸ線回折図（メッキ溶液温度７５℃）FIG. 2 is an X-ray diffraction diagram (plating solution temperature: 75 ° C.) of a tin sulfide film formed according to an example of the present invention.
【図３】 本発明の実施例に従って形成した硫化スズ膜
のＸ線回折図（メッキ溶液温度８５℃）FIG. 3 is an X-ray diffraction diagram (plating solution temperature: 85 ° C.) of a tin sulfide film formed according to an example of the present invention.
１．メッキ槽 ２．基体支持具 ３．ガラス基板 ４．ヒーター ５．硫化スズ膜 ６．温度計 ７．硫化スズのＸ線回折ピーク ８．酸化第一スズのＸ線回折ピーク ９．ガラス基板からのハロー 1. Plating tank 2. Substrate support 3. Glass substrate 4. Heater 5. Tin sulfide film 6. Thermometer 7. X-ray diffraction peak of tin sulfide 8. X-ray diffraction peak of stannous oxide 9. Halo from glass substrate
Claims (1)
メッキ法により硫化スズ膜を形成するに際し、Ｓ2-濃
度：０．０５〜０．２５モル／ｌ、５０％トリエタノー
ルアミン溶液：１００〜４００ｍｌ／ｌ、ＮＨ4 + イオ
ン濃度：０．０４〜０．１モル／ｌ、その他溶媒を含む
溶液に、塩化第一スズ２０〜６０グラム／ｌを加えて、
蒸留水で１．５〜２．５倍に希釈した混合溶液に、０．
０２〜０．０３モル／ｌの範囲でホルムアルデヒド溶液
を添加したメッキ溶液を作製し、該メッキ溶液温度を８
０〜８５℃、浸漬時間を４〜６時間の範囲で硫化スズ膜
を成膜することを特徴とする硫化スズ膜の製造方法。1. When forming a tin sulfide film by electroless plating using glass or a steel plate as a substrate, S 2− concentration: 0.05 to 0.25 mol / l, 50% triethanolamine solution: 100 to 400 ml / l, NH 4 + ion concentration: 0.04 to 0.1 mol / l, stannous chloride 20 to 60 g / l was added to a solution containing other solvent,
A mixed solution diluted 1.5 to 2.5 times with distilled water was added with 0.
A plating solution to which a formaldehyde solution was added in the range of 02 to 0.03 mol / l was prepared, and the plating solution temperature was adjusted to 8
A method for producing a tin sulfide film, which comprises forming the tin sulfide film at 0 to 85 ° C. and a dipping time of 4 to 6 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24830894A JPH0885878A (en) | 1994-09-19 | 1994-09-19 | Production of tin sulfide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24830894A JPH0885878A (en) | 1994-09-19 | 1994-09-19 | Production of tin sulfide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0885878A true JPH0885878A (en) | 1996-04-02 |
Family
ID=17176148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24830894A Withdrawn JPH0885878A (en) | 1994-09-19 | 1994-09-19 | Production of tin sulfide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0885878A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111139519A (en) * | 2020-01-02 | 2020-05-12 | 深圳大学 | Preparation method of flaky SnSe monocrystal |
-
1994
- 1994-09-19 JP JP24830894A patent/JPH0885878A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111139519A (en) * | 2020-01-02 | 2020-05-12 | 深圳大学 | Preparation method of flaky SnSe monocrystal |
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