JPH0883963A - Metal-based board - Google Patents
Metal-based boardInfo
- Publication number
- JPH0883963A JPH0883963A JP6216803A JP21680394A JPH0883963A JP H0883963 A JPH0883963 A JP H0883963A JP 6216803 A JP6216803 A JP 6216803A JP 21680394 A JP21680394 A JP 21680394A JP H0883963 A JPH0883963 A JP H0883963A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- inorganic filler
- insulating layer
- varnish
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Structure Of Printed Boards (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、プリント配線板用金属
ベース基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal base board for printed wiring boards.
【0002】[0002]
【従来の技術】パワートランジスタやハイブリッドIC
のように発熱量の大きい部品を高密度実装するための基
板には、放熱性が良好であることが要求される。金属ベ
ース基板は、金属板3の一面に絶縁層2を形成し、その
上に金属はく層1を設けた基板であり(図1参照)、放
熱性が良好である。2. Description of the Related Art Power transistors and hybrid ICs
Good heat dissipation is required for a substrate for high-density mounting of components that generate a large amount of heat as described above. The metal base substrate is a substrate in which the insulating layer 2 is formed on one surface of the metal plate 3 and the metal foil layer 1 is provided on the insulating layer 2 (see FIG. 1), and has good heat dissipation.
【0003】放熱性がよいとされる金属ベース基板の放
熱性をさらに高めるため、絶縁層に無機フィラー、特
に、アルミナのような高熱伝導性フィラーを含有させた
金属ベース基板が知られている。In order to further improve the heat dissipation of a metal base substrate which is said to have good heat dissipation, there is known a metal base substrate in which an insulating layer contains an inorganic filler, particularly a high thermal conductive filler such as alumina.
【0004】[0004]
【発明が解決しようとする課題】ところが、無機フィラ
ーを多量に含有させると、導体層と金属板間の絶縁破壊
を起こしやすく、耐電圧特性が劣るという問題があっ
た。本発明は、金属ベース基板、特に、絶縁層に無機フ
ィラーを多量に含有させた金属ベース基板について、耐
電圧特性を改善することを目的とする。However, when a large amount of the inorganic filler is contained, there is a problem that dielectric breakdown between the conductor layer and the metal plate is likely to occur and the withstand voltage characteristic is deteriorated. It is an object of the present invention to improve withstand voltage characteristics of a metal base substrate, particularly a metal base substrate having an insulating layer containing a large amount of inorganic filler.
【0005】[0005]
【課題を解決するための手段】本発明者らは、無機フィ
ラーを高充填した絶縁層を有する金属ベース基板は、マ
イクロボイドができやすく、無機フィラーと樹脂界面を
起因として絶縁破壊を起こしやすく耐電圧特性に劣るこ
とを見出し、本発明に到達した。MEANS FOR SOLVING THE PROBLEMS The present inventors have found that a metal base substrate having an insulating layer highly filled with an inorganic filler is liable to have microvoids and is liable to cause a dielectric breakdown due to an interface between the inorganic filler and a resin. The inventors have found that the voltage characteristics are inferior and have reached the present invention.
【0006】本発明は金属はくと絶縁層と金属板からな
る金属ベース基板において、絶縁層中に熱伝導性の高い
無機フィラーと無機フィラーの表面を改質させる分散剤
を含有することを特徴とする。According to the present invention, in a metal base substrate comprising a metal foil, an insulating layer and a metal plate, the insulating layer contains an inorganic filler having high thermal conductivity and a dispersant for modifying the surface of the inorganic filler. And
【0007】金属はく1は、銅はく、アルミはく等の導
電性を有するものであればよく、特に限定されるもので
はない。The metal foil 1 is not particularly limited as long as it has conductivity such as copper foil and aluminum foil.
【0008】金属板3は、アルミニウム板、鉄板など、
金属ベース基板用に用いられているものであればよく、
特に制限されるものではない。The metal plate 3 is an aluminum plate, an iron plate, or the like.
As long as it is used for a metal base substrate,
There is no particular limitation.
【0009】絶縁層2を構成する樹脂成分としては、エ
ポキシ樹脂、フェノール樹脂、ビスマレイミド樹脂、フ
ェノキシ樹脂及びこれらの混合樹脂などが使用可能であ
る。As the resin component constituting the insulating layer 2, epoxy resin, phenol resin, bismaleimide resin, phenoxy resin, a mixed resin thereof or the like can be used.
【0010】絶縁層2を構成する樹脂には、絶縁性で熱
伝導性の良好な無機フィラーを65〜80体積%、好ま
しくは70から80体積%充填する。ここで用いる無機
フィラーには、体積抵抗率1010Ω・cm以上、熱伝導
率が20W/cm・s・℃以上の例えばアルミナ、酸化
マグネシウム、酸化ベリリウム等の酸化物の粉末、窒化
アルミニウム、窒化ほう素等の窒化物の粉末、ダイヤモ
ンドの粉末などを用いることができる。また、単一の粒
径をもつ無機フィラーでは65体積%以上充填した場合
には、ボイドの発生を免れない。したがって、広い粒度
分布をもつ無機フィラーを用いる必要性があるが、本発
明ではこれを限定されるものではない。The resin constituting the insulating layer 2 is filled with an inorganic filler having an insulating property and good thermal conductivity in an amount of 65 to 80% by volume, preferably 70 to 80% by volume. Examples of the inorganic filler used here include powders of oxides such as alumina, magnesium oxide and beryllium oxide having a volume resistivity of 10 10 Ω · cm or more and a thermal conductivity of 20 W / cm · s · ° C or more, aluminum nitride, nitriding. A powder of nitride such as boron or a powder of diamond can be used. Further, when the inorganic filler having a single particle size is filled at 65% by volume or more, voids are inevitable. Therefore, it is necessary to use an inorganic filler having a wide particle size distribution, but the present invention is not limited to this.
【0011】本発明において用いられる分散剤として
は、分子中に、カルボキシル基、ニトリル基、アクリル
アミド基、アミノアミド基、ピリジル基、ヒドロキシル
基、ヒドロキシエステル基、エチレンオキサイド基等の
官能基を有する共重合物系の分散剤や、エステル型、エ
ーテル型、エステルエーテル型、含窒素型等のノニオン
系分散剤や脂肪族アミン塩、芳香族アミン塩、複素環ア
ミン塩、アルキルアミン、ポリアルキレンポリアミン誘
導体等の分散剤が挙げられる。このほか、無機フィラー
の表面を改質し、樹脂中への分散に効果のある分散剤で
あればその組成を限定するものではなく、レベリング剤
や消泡剤との併用も可能である。As the dispersant used in the present invention, a copolymer having a functional group such as a carboxyl group, a nitrile group, an acrylamide group, an aminoamide group, a pyridyl group, a hydroxyl group, a hydroxyester group and an ethylene oxide group in the molecule. -Based dispersants, nonionic dispersants of ester type, ether type, ester ether type, nitrogen-containing type, etc., aliphatic amine salts, aromatic amine salts, heterocyclic amine salts, alkyl amines, polyalkylene polyamine derivatives, etc. Dispersants of In addition, the composition of the dispersant is not limited as long as the dispersant is effective to modify the surface of the inorganic filler and disperse it in the resin, and it can be used in combination with a leveling agent or an antifoaming agent.
【0012】無機フィラーとして、アルミナを用いると
きには、官能基を有する共重合物系の分散剤が特に有効
である。このような分散剤として、例えば、英国ICI
社からカルボキシル基、エチレンオキサイド基、ヒドロ
キシエステル基を有する共重合物系の分散剤が市販され
ている。また、ドイツ国ビックッケミー社から、ヒドロ
キシル基、アミノアミド基、カルボキシル基、エチレン
オキサイド基を有する共重合物系の分散剤が市販されて
いる。When alumina is used as the inorganic filler, a copolymer-based dispersant having a functional group is particularly effective. Examples of such a dispersant include, for example, ICI in England.
A copolymer-based dispersant having a carboxyl group, an ethylene oxide group, and a hydroxy ester group is commercially available from the same company. Also, a copolymer-based dispersant having a hydroxyl group, an aminoamide group, a carboxyl group, and an ethylene oxide group is commercially available from Bick Chemie GmbH, Germany.
【0013】多量の無機フィラーを含有する熱硬化性樹
脂ワニスは、らいかい機、ニーダ、ボールミルやロール
ミルなどを単独または組み合わせて製造できる。無機フ
ィラーの分散が十分にできるものであれば特にその混練
法を限定するものではない。また、ワニス作製後、真空
脱気や超音波脱気によりワニス中の気泡を除去すること
が望ましい。The thermosetting resin varnish containing a large amount of inorganic filler can be produced by a raking machine, a kneader, a ball mill, a roll mill, etc., alone or in combination. The kneading method is not particularly limited as long as the inorganic filler can be sufficiently dispersed. Further, it is desirable to remove air bubbles in the varnish by vacuum degassing or ultrasonic degassing after the varnish is produced.
【0014】[0014]
【作用】本発明によれば絶縁層となるワニス中に分散剤
を添加することによって、絶縁層に含まれる多量の無機
フィラーの表面を改質することができる。このことによ
って、ワニス中の気泡の脱気を容易にし、マイクロボイ
ドの低減を図ることができる。また、無機フィラーの沈
降の抑制効果もあり、均一に無機フィラーが分散された
絶縁層を得ることができる。According to the present invention, the surface of a large amount of the inorganic filler contained in the insulating layer can be modified by adding a dispersant to the varnish which forms the insulating layer. This facilitates the deaeration of the bubbles in the varnish and reduces the microvoids. Further, it also has an effect of suppressing the sedimentation of the inorganic filler, and an insulating layer in which the inorganic filler is uniformly dispersed can be obtained.
【0015】[0015]
ワニス1の調製 固型エポキシ樹脂(油化シェルエポキシ株式会社の商品
名エピコート1001を用いた)30重量部、・液状エ
ポキシ樹脂(油化シェルエポキシ株式会社の商品名エピ
コート828を用いた)50重量部、フェノキシ樹脂
(東都化成株式会社の商品名YP−50を用いた)20
重量部、フェールノボラック樹脂(日立化成工業株式会
社の商品名HP850Nを用いた)35重量部、シアノ
エチル化−2−フェニルイミダゾール(四国化成工業株
式会社の商品名2PZ−CNを用いた)0.5重量部、
γ−グリシドキシ−プロピルトリメトキシシラン(シラ
ンカップリング剤:日本ユニカー株式会社の商品名NU
C A−187を用いた)3.3重量部、アルミナフィ
ラー(粒径1〜40μm、平均粒径10μm、昭和電工
株式会社商品名AS−50を用いた)450重量部をボ
ールミルでフィラーが十分に分散されるまで混合した。Preparation of Varnish 1 30 parts by weight of solid epoxy resin (using Epicoat 1001 manufactured by Yuka Shell Epoxy Co., Ltd.), 50 parts by weight of liquid epoxy resin (using Epicoat 828 manufactured by Yuka Shell Epoxy Co., Ltd.) Part, phenoxy resin (using Toyo Kasei Co., Ltd., trade name YP-50) 20
35 parts by weight of fail novolak resin (using HP850N, trade name of Hitachi Chemical Co., Ltd.), 0.5 parts of cyanoethylated-2-phenylimidazole (using 2PZ-CN, trade name of Shikoku Chemical Co., Ltd.) 0.5 Parts by weight,
γ-glycidoxy-propyltrimethoxysilane (silane coupling agent: product name NU of Nippon Unicar Co., Ltd.
C. A-187) 3.3 parts by weight, alumina filler (particle size 1 to 40 .mu.m, average particle size 10 .mu.m, Showa Denko KK trade name AS-50 used) 450 parts by weight with a ball mill, sufficient filler. Mixed until dispersed.
【0016】ワニス2の調製 ワニス1の組成で、アルミナフィラーの配合量を102
0重量部に変え、ボールミルでフィラーが十分に分散さ
れるまで混合した。Preparation of varnish 2 With the composition of varnish 1, the compounding amount of alumina filler was 102
The content was changed to 0 part by weight, and mixed by a ball mill until the filler was sufficiently dispersed.
【0017】ワニス3の調製 ワニス2の組成に、アルキル(2〜4)フェノール・フ
ェニルフェノール・ホルムアルデヒド縮合物を成分とす
る分散剤(ビックケミー・ジャパン株式会社、商品名D
isperbyk−110)10重量部を配合して、ボ
ールミルでフィラーが十分に分散されるまで混合した。Preparation of Varnish 3 In the composition of Varnish 2, a dispersant containing an alkyl (2-4) phenol / phenylphenol / formaldehyde condensate as a component (Big Chemie Japan Co., Ltd., trade name D
10 parts by weight of isperbyk-110) were mixed and mixed in a ball mill until the filler was sufficiently dispersed.
【0018】ワニス4の調製 ワニス3の組成から、シランカップリング剤を7重量部
に変え、分散剤を重合脂肪酸・ポリエチレンポリアミン
・脂肪酸重縮合物とスチレンオキシドの付加物を成分と
する分散剤(ビックケミー・ジャパン株式会社、商品名
Disperbyk−161)20重量部に変え、ボー
ルミルでフィラーが十分に分散されるまで混合した。Preparation of Varnish 4 From the composition of Varnish 3, the silane coupling agent was changed to 7 parts by weight, and the dispersant was composed of a polymerized fatty acid / polyethylene polyamine / fatty acid polycondensate and a styrene oxide adduct as a component ( Big Chemie Japan Co., Ltd., trade name Disperbyk-161) was changed to 20 parts by weight, and mixed by a ball mill until the filler was sufficiently dispersed.
【0019】ワニス5の調製 ワニス3の組成から、シランカップリング剤を7重量部
に変え、分散剤の配合量を13重量部に変え、さらに、
アルミナフィラーを、前記AS−50を900重量部、
同じく昭和電工株式会社の商品名AL−45−1を40
0重量部に変え、ボールミルでフィラーが十分に分散さ
れるまで混合した。Preparation of Varnish 5 From the composition of Varnish 3, the silane coupling agent was changed to 7 parts by weight, the compounding amount of the dispersant was changed to 13 parts by weight, and further,
Alumina filler, 900 parts by weight of the AS-50,
Similarly, the trade name AL-45-1 of Showa Denko KK is 40
The content was changed to 0 part by weight, and mixed by a ball mill until the filler was sufficiently dispersed.
【0020】実施例1 厚み70μmの銅はく(古河電気工業株式会社、商品名
GTS−70)に前記ワニス3を塗布し、加熱乾燥し
て、膜厚が100μmのBステージ状態の絶縁層を形成
した。上記絶縁層付銅はくと厚み1.5mmのアルミニ
ウム板とを重ね、170℃で90分、40MPaのプレ
ス条件で加熱加圧することにより金属ベース基板を得
た。無機フィラーの充填率は70体積%であった。Example 1 A copper foil (Furukawa Electric Co., Ltd., trade name GTS-70) having a thickness of 70 μm was coated with the varnish 3 and dried by heating to form an insulating layer in a B stage state having a thickness of 100 μm. Formed. The above-mentioned copper foil with an insulating layer and an aluminum plate having a thickness of 1.5 mm were superposed and heated and pressed at 170 ° C. for 90 minutes under a pressing condition of 40 MPa to obtain a metal base substrate. The filling rate of the inorganic filler was 70% by volume.
【0021】実施例2 ワニス4を用いたほかは実施例1と同様にして金属ベー
ス基板を得た。無機フィラーの充填率は70体積%であ
った。Example 2 A metal base substrate was obtained in the same manner as in Example 1 except that the varnish 4 was used. The filling rate of the inorganic filler was 70% by volume.
【0022】実施例3 ワニス5を用いたほかは実施例1と同様にして金属ベー
ス基板を得た。無機フィラーの充填率は75体積%であ
った。Example 3 A metal base substrate was obtained in the same manner as in Example 1 except that the varnish 5 was used. The filling rate of the inorganic filler was 75% by volume.
【0023】実施例4 厚み70μmの銅はく(古河電気工業株式会社、商品名
GTS−70)に前記ワニス3を塗布し、加熱乾燥し
て、膜厚が100μmのBステージ状態の絶縁層を形成
した。厚み1.5mmのアルミニウム板を5分間120
℃に加熱し、その上に前記絶縁層付銅はくを、160℃
で線圧196N/cmの条件でラミネーターにより加熱
加圧後、170℃で60分加熱硬化させ金属ベース基板
を得た。無機フィラーの充填率は70体積%であった。Example 4 A copper foil (Furukawa Electric Co., Ltd., trade name GTS-70) having a thickness of 70 μm was coated with the varnish 3 and dried by heating to form an insulating layer in a B stage state having a thickness of 100 μm. Formed. 120mm aluminum plate with a thickness of 1.5mm for 5 minutes
It is heated to ℃, on top of which the copper foil with insulating layer is placed at 160 ℃
After heating and pressurizing with a laminator under the condition of linear pressure of 196 N / cm, it was heated and cured at 170 ° C. for 60 minutes to obtain a metal base substrate. The filling rate of the inorganic filler was 70% by volume.
【0024】比較例1 ワニス1を用いたほかは実施例1と同様にして金属ベー
ス基板を得た。無機フィラーの充填率は50体積%であ
った。Comparative Example 1 A metal base substrate was obtained in the same manner as in Example 1 except that Varnish 1 was used. The filling rate of the inorganic filler was 50% by volume.
【0025】比較例2 ワニス2を用いたほかは実施例1と同様にして金属ベー
ス基板を得た。無機フィラーの充填率は70体積%であ
った。Comparative Example 2 A metal base substrate was obtained in the same manner as in Example 1 except that the varnish 2 was used. The filling rate of the inorganic filler was 70% by volume.
【0026】以上得られた金属ベース基板の熱抵抗(単
位:℃/W)及び耐電圧(単位:kV)を表1に示す。
この結果から、本発明実施例の金属ベース基板は、熱抵
抗が小さく、耐電圧特性も優れていることがわかる。Table 1 shows the thermal resistance (unit: ° C / W) and withstand voltage (unit: kV) of the metal base substrate obtained above.
From these results, it can be seen that the metal base substrates of the examples of the present invention have low thermal resistance and excellent withstand voltage characteristics.
【0027】[0027]
【表1】 [Table 1]
【0028】なお、熱抵抗及び耐電圧の測定法は以下の
通りである。 熱抵抗:アルミニウム金属の放熱ブロック上に、試験片
を置き、試験片の銅はく上にはんだ付けされたトランジ
スタに直流電圧を印加して、トランジスタと放熱ブロッ
クの温度を測定し、両者の温度差を印加電力で除して求
める。 耐電圧:昇圧速度500V/秒で連続昇圧したとき、絶
縁材料が破壊しないときの電圧。The methods for measuring thermal resistance and withstand voltage are as follows. Thermal resistance: Place a test piece on a heat dissipation block made of aluminum metal, apply a DC voltage to the transistor soldered on the copper foil of the test piece, measure the temperature of the transistor and heat dissipation block, and measure the temperature of both. It is calculated by dividing the difference by the applied power. Withstand voltage: The voltage at which the insulating material is not destroyed when continuously boosted at a boosting rate of 500 V / sec.
【0029】[0029]
【発明の効果】以上説明したように本発明によれば、絶
縁層に多量の無機フィラーを含有させても、マイクロボ
イドの発生も抑制でき、耐電圧特性にも優れた金属ベー
ス基板を提供することが可能となる。As described above, according to the present invention, it is possible to suppress the generation of microvoids even when the insulating layer contains a large amount of inorganic filler, and to provide a metal base substrate having excellent withstand voltage characteristics. It becomes possible.
【図1】本発明金属ベース基板の一例の断面図である。FIG. 1 is a sectional view of an example of a metal base substrate of the present invention.
1 金属はく 2 絶縁層 3 金属板 1 Metal foil 2 Insulation layer 3 Metal plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 仙波 広美 茨城県下館市大字小川1500番地 日立化成 工業株式会社下館研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hiromi Senba, 1500, Ogawa, Ogawa, Shimodate-shi, Ibaraki Prefecture Hitachi Chemical Co., Ltd. Shimodate Laboratory
Claims (2)
分散剤を含有する絶縁層を介して、金属はくを金属板に
一体化してなる金属ベース基板。1. A metal base substrate in which a metal foil is integrated with a metal plate through an insulating layer containing 65 to 80% by volume of an inorganic filler and a dispersant.
親和性のある官能基を有する共重合物である請求項1記
載の金属ベース基板。2. The metal-based substrate according to claim 1, wherein the dispersant is a copolymer having a functional group having a strong affinity for an inorganic substance in the molecule.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6216803A JPH0883963A (en) | 1994-09-12 | 1994-09-12 | Metal-based board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6216803A JPH0883963A (en) | 1994-09-12 | 1994-09-12 | Metal-based board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0883963A true JPH0883963A (en) | 1996-03-26 |
Family
ID=16694139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6216803A Pending JPH0883963A (en) | 1994-09-12 | 1994-09-12 | Metal-based board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0883963A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005036939A1 (en) * | 2003-10-07 | 2005-04-21 | Neomax Materials Co., Ltd. | Substrate and method for producing same |
WO2009031536A1 (en) * | 2007-09-05 | 2009-03-12 | Sekisui Chemical Co., Ltd. | Insulating sheet and multilayer structure |
JP2009062436A (en) * | 2007-09-05 | 2009-03-26 | Sekisui Chem Co Ltd | Insulation sheet and laminated structure |
DE102008045424A1 (en) | 2007-10-01 | 2009-04-09 | San-Ei Kagaku Co. Ltd. | A curable synthetic resin composition containing an inorganic filler and an organic filler, a printed circuit board coated with a resist layer, and a process for producing the same |
JP2009149770A (en) * | 2007-12-20 | 2009-07-09 | Sekisui Chem Co Ltd | Insulating sheet and multilayer structure |
JP2009164093A (en) * | 2007-12-14 | 2009-07-23 | Sekisui Chem Co Ltd | Insulating sheet and multilayer structure |
JP2009231249A (en) * | 2008-03-25 | 2009-10-08 | Sekisui Chem Co Ltd | Insulation sheet and laminated structural body |
JP2009231250A (en) * | 2008-03-25 | 2009-10-08 | Sekisui Chem Co Ltd | Insulating sheet and laminate structure |
JP2011238729A (en) * | 2010-05-10 | 2011-11-24 | Denki Kagaku Kogyo Kk | Substrate manufacturing method and circuit board manufacturing method |
JP2012253320A (en) * | 2011-05-12 | 2012-12-20 | Sumitomo Chemical Co Ltd | Metal base circuit board and light emitting element |
JP2013121903A (en) * | 2011-12-12 | 2013-06-20 | Sumitomo Bakelite Co Ltd | Filler, composition for forming insulating layer, film for forming insulating layer, and substrate |
WO2015163055A1 (en) * | 2014-04-21 | 2015-10-29 | 住友ベークライト株式会社 | Metal-based substrate, method for manufacturing metal-based substrate, metal-based circuit board, and electronic device |
-
1994
- 1994-09-12 JP JP6216803A patent/JPH0883963A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005036939A1 (en) * | 2003-10-07 | 2005-04-21 | Neomax Materials Co., Ltd. | Substrate and method for producing same |
WO2009031536A1 (en) * | 2007-09-05 | 2009-03-12 | Sekisui Chemical Co., Ltd. | Insulating sheet and multilayer structure |
JP2009062436A (en) * | 2007-09-05 | 2009-03-26 | Sekisui Chem Co Ltd | Insulation sheet and laminated structure |
DE102008045424A1 (en) | 2007-10-01 | 2009-04-09 | San-Ei Kagaku Co. Ltd. | A curable synthetic resin composition containing an inorganic filler and an organic filler, a printed circuit board coated with a resist layer, and a process for producing the same |
JP2009164093A (en) * | 2007-12-14 | 2009-07-23 | Sekisui Chem Co Ltd | Insulating sheet and multilayer structure |
JP2009149770A (en) * | 2007-12-20 | 2009-07-09 | Sekisui Chem Co Ltd | Insulating sheet and multilayer structure |
JP2009231249A (en) * | 2008-03-25 | 2009-10-08 | Sekisui Chem Co Ltd | Insulation sheet and laminated structural body |
JP2009231250A (en) * | 2008-03-25 | 2009-10-08 | Sekisui Chem Co Ltd | Insulating sheet and laminate structure |
JP2011238729A (en) * | 2010-05-10 | 2011-11-24 | Denki Kagaku Kogyo Kk | Substrate manufacturing method and circuit board manufacturing method |
EP2571342A1 (en) * | 2010-05-10 | 2013-03-20 | Denki Kagaku Kogyo Kabushiki Kaisha | Method of manufacturing metal-base substrate and method of manufacturing circuit board |
US8796145B2 (en) | 2010-05-10 | 2014-08-05 | Denki Kagaku Kogyo Kabushiki Kaisha | Method of manufacturing metal-base substrate and method of manufacturing circuit board |
EP2571342A4 (en) * | 2010-05-10 | 2015-05-06 | Denki Kagaku Kogyo Kk | Method of manufacturing metal-base substrate and method of manufacturing circuit board |
JP2012253320A (en) * | 2011-05-12 | 2012-12-20 | Sumitomo Chemical Co Ltd | Metal base circuit board and light emitting element |
JP2013121903A (en) * | 2011-12-12 | 2013-06-20 | Sumitomo Bakelite Co Ltd | Filler, composition for forming insulating layer, film for forming insulating layer, and substrate |
WO2015163055A1 (en) * | 2014-04-21 | 2015-10-29 | 住友ベークライト株式会社 | Metal-based substrate, method for manufacturing metal-based substrate, metal-based circuit board, and electronic device |
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