JPH088281B2 - Film material for film carrier manufacturing - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a film material for manufacturing a film carrier, which is a raw material when manufacturing a film carrier for mounting a semiconductor chip, and The present invention relates to a method for manufacturing a film material.

[Conventional technology]

As a package structure of semiconductor chips such as IC and LSI,
There is a so-called film carrier system. this is,
A film carrier is manufactured by forming a conductor metal layer such as Cu foil on a film tape and etching the conductor metal layer to form a lead pattern, and a semiconductor chip is bonded and connected to the lead pattern on the film carrier. After that, the film carrier is punched and separated for each individual lead pattern to obtain a film carrier chip on which a semiconductor chip is mounted.

4 and 5 show the structure of a typical film carrier chip. First, FIG. 4 shows a bonding wire type film in which a semiconductor chip and a lead pattern of a film carrier are connected by a bonding wire. The carrier chip is shown. A lead pattern 20 made of a conductor metal layer such as Cu is formed in a predetermined pattern on a film 10 made of a polyimide resin or the like. The semiconductor chip 30 is mounted and fixed on the film 10 by means of solder or the like, and then each electrode and the lead pattern 20 are electrically connected by a bonding wire 40. The periphery of the semiconductor chip 30 is covered with the sealing resin 50.

Next, FIG. 5 shows a bump type film carrier chip in which the semiconductor chip and the lead pattern of the film carrier are connected by bumps. The difference from the structure shown in FIG. 4 is that the lead pattern 20 is extended to each electrode position on the lower surface of the semiconductor chip 30, and a bump 70 made of Au, solder or the like is formed on the extended lead pattern 20. The lead pattern 20 and each electrode are electrically connected via the semiconductor chip 30 and the semiconductor chip 30 itself is fixed to the film 10.

Comparing both, in the case of wire bonding type,
It takes time and effort to connect the individual electrodes of the semiconductor chip 30 and the lead pattern 20 with the bonding wires 40, and in order to perform the wire bonding work, it is necessary to secure a sufficient distance between the electrodes. There is a problem that the plane size of the whole 30 becomes large. Further, since the bonding wire 40 is projected onto the surface of the semiconductor chip 30, the bonding wire 40
In order to completely cover the whole, there is a drawback that the outer shape of the sealing resin 50 becomes large and the bulk dimension of the film carrier chip becomes large.

On the other hand, in the case of the bump type, if the bumps 70 are sandwiched between the electrodes of the semiconductor chip 30 and the lead pattern 20 and they are collectively heated and pressed, all the connections can be achieved at once, which is extremely efficient. Can be connected to. Further, since the electrodes can be connected even if the distance between the electrodes is small, the electrode distance, that is, the area of the semiconductor chip 30 can be reduced. The bump 70 is hidden on the back surface of the semiconductor chip 30 and has a slight thickness, so that the bump 70 also becomes thinner in the thickness direction. As a result, the overall size of the film carrier chip can be reduced.

For the above reasons, the bump type is used for a small package because it is superior to the wire bonding type.

[Problems to be Solved by the Invention]

However, the bump type film carrier chip has a drawback that it is not flexible with respect to the electrode arrangement of the semiconductor chip 30.

That is, the lead pattern of the film carrier chip
Out of 20, the outer lead portion 21 for connecting to an external circuit such as a wiring board can be used as it is for various mounting forms if it is adjusted to a certain standard dimension. However, since the electrode arrangement of the semiconductor chip 30 is completely different depending on the structure of each semiconductor chip 30, the inner lead portion 22 of the lead pattern 20 is not included in the semiconductor chip 30.
Must be formed according to the electrode arrangement, that is, the arrangement of the bumps 70.

Therefore, the film 10 provided with the lead pattern 20 having the inner lead portion 22 having a fixed pattern, that is, the film carrier cannot be used for mounting the semiconductor chips 30 having different electrode arrangements, and the electrode arrangement of the semiconductor chips 30 is changed every time. First, a film carrier having lead patterns 20 having different formation patterns must be manufactured. Then, when the formation pattern of the lead pattern 20 changes, it is necessary to prepare a mask or a mold for etching for each pattern, which increases the device cost and changes the setup of the device each time the pattern is changed. There is a problem that it has to be done and it takes a long working time.

In particular, in recent years, the number of electrodes of semiconductor chips has increased more and more, and the production of various kinds in small quantities has progressed.Therefore, a long lead time for manufacturing an etching mask is set every time the kinds of products are changed. In addition, the increase in initial cost is a very serious problem.

Therefore, an object of the present invention is to provide a film carrier for manufacturing a bump-type film carrier chip suitable for miniaturization of semiconductor chips and efficiency of mounting work,
A film material for manufacturing a film carrier that can easily cope with a change in electrode arrangement of a semiconductor chip,
Another object of the present invention is to provide a method for producing this film material.

[Means for solving the problem]

In order to solve the above problems, the inventors of the present application first
A film material for manufacturing a film carrier as described below and a method for manufacturing a film carrier using this film material have been invented and applied for a patent.

The film material for producing a film carrier according to the invention of the prior application is an inner lead in which only the outer lead portion of the lead pattern is patterned and the inner lead portion is not patterned, and the whole is left as a conductor metal layer. It is a forming part. The target film carrier is manufactured by patterning a predetermined inner lead part by removing part of the inner lead forming part by laser processing according to the electrode arrangement of the semiconductor chip to be mounted on this film material. It can be done. According to this invention, the film material to be manufactured in advance can be manufactured in a batch with the same lead pattern shape regardless of the electrode arrangement of the semiconductor chip, and even if the electrode arrangement of the semiconductor chip is changed, It is possible to exhibit excellent operational effects such as being able to easily deal with it only by changing the program.

However, the above-mentioned prior invention also has the following problems. Since the pattern formation of the outer lead part by etching and the pattern formation of the inner lead part by laser processing are performed in separate steps, the outer lead part formation position and the inner lead part formation position must be accurately aligned. The problem is that it does not happen.

Therefore, as a result of further improvement of the above-mentioned prior invention, a method of accurately and simply positioning the formation pattern of the outer lead portion and the inner lead portion in the film material for manufacturing the film carrier is described below. The present invention has been completed.

The film material for producing a film carrier according to the present invention is a film carrier in which electrodes of a semiconductor chip mounted on the film are connected to inner lead portions of a lead pattern formed on the film through bumps. A film material for manufacturing the same, wherein, of the lead patterns formed by pattern formation from the conductor metal layer on the film, the outer lead portions whose pattern does not change depending on the electrode arrangement of the semiconductor chip to be mounted are pre-patterned. However, the inner lead portion whose pattern changes depending on the electrode arrangement of the semiconductor chip to be mounted is not formed as a pattern and is left as a conductor metal layer to form an inner lead forming portion. From the same position as the outer lead pattern formation Over click portion is also formed.

A film material for a film carrier is one in which a lead pattern is formed by forming a conductor metal layer such as copper on the surface of a film tape made of a polyimide resin or the like, and then etching it into a predetermined pattern shape. The basic structure may be the same as that of a conventional film material for producing a conventional film carrier.

According to the present invention, of the formation pattern of the lead pattern, the outer lead portion for connection to the external circuit is formed with a predetermined pattern as in the conventional case, but the inner lead connected to the electrode of the semiconductor chip is formed. The parts are not patterned and are left entirely covered with the conductive metal layer. The conductor metal portion for forming this inner lead portion is called an inner lead forming portion. Here, the inner lead portion means a portion whose pattern needs to be changed according to the electrode arrangement of the semiconductor chip, and even if it is the inner portion of the lead pattern, the pattern is changed depending on the electrode arrangement of the semiconductor chip. As for the portions that do not need to be changed, the pattern is formed in the same manner as the outer lead portion.

As the conductor metal layer forming the lead pattern, in addition to the above-mentioned copper, Al, Ni, Au, or other conductor metal for forming a circuit can be used, and different conductor metals may be used depending on the location of the lead pattern. Alternatively, a plurality of conductor metal layers may be laminated.

Further, a positioning mark portion is formed at the same position as the outer lead portion and the inner lead forming portion, from the same conductor metal layer, at the same time when the outer lead portion pattern is formed. As the shape of the positioning mark portion, it is preferable to use a shape such as a “+” mark or a hook mark which is an index suitable for alignment in both the XY directions. One or more positioning mark portions are formed near the outer lead portion and the inner lead forming portion. Specifically, for example, if two positioning mark portions are diagonally formed at positions between outer lead portions in a plurality of directions extending to the outside of the inner lead forming portion, an extra space is not taken up. In addition, it is possible to reliably position.

The film material of the present invention has a lead pattern and a positioning mark portion having such a structure.

Next, a method for producing a film carrier using the above film material will be described.

The inner lead pattern is formed according to the electrode arrangement of each semiconductor chip to be mounted. The pattern formation of the inner lead portion is performed by laser processing. For the processing pattern of laser processing, the NC processing control device or the like may be used to control the irradiation of the laser beam by a program set in advance in accordance with the electrode arrangement of the semiconductor chip. Then, the reference of the processing pattern of laser processing is performed by the positioning mark portion formed on the film. That is, the positioning mark portion is detected by an appropriate sensor such as an optical sensor, and the inner lead portion is formed at a position accurately corresponding to the outer lead portion based on the detected position information of the positioning mark portion. In this way, the laser light is moved and irradiated. The detection of the positioning mark portion and the determination of the irradiation position of the laser beam may be automatically controlled by using the sensor as described above, or the positioning mark portion may be displayed on an enlarged image device or the like and visually checked. The irradiation position of the laser light or the device position of the film material may be adjusted. The specific laser processing apparatus and processing conditions can be the same as those used in ordinary semiconductor manufacturing, wiring circuit manufacturing, and the like.

The film carrier for which the pattern formation of the inner lead part has been completed is similar to the normal semiconductor chip mounting method, and the bump forming process between each electrode and the bonding and bonding process through the bump between the inner lead part and the semiconductor chip electrode are performed. The desired film carrier chip is manufactured by performing a resin sealing process, a punching separation process into individual film carrier chips, and the like. In the step of bonding and bonding the inner lead portion and the electrode, if the inner lead portion and the electrode of the semiconductor chip are aligned with each other using the positioning mark portion described above, the positioning can be performed easily and accurately. In other steps as well, the positioning mark portion can be used as a reference for alignment. If the finally manufactured film carrier chip does not require the positioning mark portion, the positioning mark portion may be removed in the punching separation step or the like.

[Action]

The pattern formation of the lead pattern on the film carrier is divided into an outer lead portion which is not changed due to the electrode arrangement of the semiconductor chip and an inner lead portion which is changed every time the electrode arrangement is changed, and a film material for manufacturing the film carrier is formed. Since only the outer lead pattern is formed, the same film material can be used regardless of the electrode arrangement of the semiconductor chip.
It can be mass-produced efficiently. Then, for such a film material, only the pattern formation of the inner lead portion is processed by the laser processing that can easily change the processing pattern for each semiconductor chip having a different electrode arrangement. Therefore, the electrode arrangement of the semiconductor chip is changed. Can be handled very easily.

In other words, for the outer lead portion where the formation pattern is not changed, the pattern is formed efficiently and economically by a normal circuit forming means such as an etching method, and only the inner lead portion where the formation pattern is changed is formed. Since the processing pattern can be freely changed by laser processing, it is possible to easily change the electrode arrangement of the semiconductor chip without lowering the productivity of the film carrier, which makes the film carrier extremely flexible. It becomes a film material for.

Furthermore, at the same time when the outer lead pattern is formed,
Since the positioning mark part is formed, when performing laser patterning on the inner lead part, if the laser beam irradiation is controlled with reference to this positioning mark part, the pattern of the outer lead part will be accurate. The pattern of the inner lead portion can be formed in the state of being aligned with. When the positioning mark part is formed by the same etching method as the outer lead part, and the general processing position accuracy of etching is about ± 2 μm, the positioning accuracy of the positioning mark part is also extremely accurate of ± 2 μm. . Further, since the outer lead portion and the positioning mark portion are etched at the same time, even if there are positional errors with respect to the film material, the relative positional error between them is extremely small.

Moreover, the positioning mark portion can be used as a positioning reference when it is necessary to accurately know the position of the lead pattern in the subsequent film carrier manufacturing process.

〔Example〕

Next, the present invention will be described in detail below with reference to the drawings illustrating an embodiment. It should be noted that the same reference numerals are given to the structural parts common to the structure of the conventional example described above, and the duplicated description will be omitted.

FIG. 1 shows a film tape 10a which is a film material for manufacturing a fill carrier. Sponge holes 11 and 11 are formed through the long film tape 10a at regular intervals at both ends in the width direction. There is.

A lead pattern 20 for mounting a semiconductor chip is formed in the center of the surface of the film tape 10a. The lead pattern 20 is formed by forming a conductive metal layer such as copper on the entire surface of the film tape 10a and then removing the conductive metal layer into a predetermined pattern by etching. The lead pattern 20 is composed of a strip-shaped outer lead portion 21 extending in all directions, and a regular square inner lead forming portion 23 located in the center of the outer lead portion 21. The structure of the outer lead portion 21 is
This is similar to the case of a conventional normal film carrier. Unlike the conventional case, the inner lead forming portion 23 is not patterned for each individual electrode, but is formed integrally and continuously. That is, when the electrode arrangement of the semiconductor chip 30 is changed, the inner lead forming portion 23 is provided so as to cover the entire places where the individual inner lead portions may be arranged. At the center of the inner lead forming portion 23, a small square-shaped space portion 24 is formed. This is because in the normal semiconductor chip 30, the electrodes are set in the peripheral portion of the plane shape and the electrode is rarely set in the central portion, so that the inner lead portion is not formed up to the central portion. Therefore, the space 24
By forming the above, it is possible to reduce the trouble of processing the inner lead portion described later.

Next, the positioning mark portions 29, 29 are formed at two positions facing each other in the diagonal extension direction of the inner lead portion 23. The positioning mark portion 29 forms a “+” mark and is formed by etching the conductor metal layer at the same time as the outer lead portion 21 and the inner lead forming portion 23.

When the lead pattern 20 and the positioning mark portion 29 as described above are formed, the production of the film tape 10a, that is, the film material for producing the film carrier is completed, and in this state, it is provided for transportation, storage or sale.

FIG. 2 schematically shows a step of mounting the semiconductor chip 30 on a film material such as the film tape 10a. First, as shown in FIG. 2 (a), on the surface of the film 10,
A lead pattern 20 made of a conductive metal layer and a positioning mark portion 29 (not shown in the figure) are formed. This state is the state shown in FIG.

Next, according to the electrode arrangement of the semiconductor chip 30 to be mounted, the inner lead forming portion of the lead pattern 20.
23 is patterned. As shown in FIG. 2B, a laser beam R is applied from above the lead pattern 20 to remove the conductor metal layer of the inner lead forming portion 23. The irradiation position of the laser beam R is determined by detecting the position of the positioning mark portion 29 with a sensor and operating the control mechanism of the laser beam R or the holding mechanism of the film 10 based on the detection information. By controlling the irradiation pattern of the laser beam R, the inner lead portion 22 having a desired pattern shape can be formed.

FIG. 3 shows the structure of the inner lead portion 22 formed in this way, and is followed by each outer lead portion 21 arranged at a relatively wide constant interval, followed by a thin wedge-shaped inner lead. The portion 22 is provided, and the tip of the inner lead portion 22 is arranged at each electrode position on the lower surface of the semiconductor chip 30. As described above,
A film carrier in which the entire lead pattern 20 is patterned can be manufactured.

FIG. 2 (c) shows a state in which a semiconductor chip is mounted on the film carrier, and the semiconductor chip 30 is placed on the inner lead portion 22 via the bumps 70, and the semiconductor chip 30 is pressed and heated to be heated. Each electrode of the chip 30 and each inner lead portion 22 are connected and fixed. Specific bump connecting means and steps are carried out in the same manner as in the conventional method for manufacturing a conventional bump type film carrier chip.

After that, the mounting portion of the semiconductor chip 30 is sealed with resin, and the film tape 10 is formed on the outer peripheral portion of the lead pattern 20.
It is separated from the peripheral part of a by punching, or the lead pattern 20
Among them, the bending of the outer lead portion 21 so as to be easily connected to the outer peripheral circuit is performed in the same manner as in the conventional method for manufacturing a conventional film carrier chip.

〔The invention's effect〕

According to the film material for manufacturing the film carrier according to the present invention described above, the inner lead portion for bump connection, which needs to be changed every time the electrode arrangement of the semiconductor chip changes, is not formed, and the entire conductive metal is formed. Since the inner lead forming portion remains covered with the layers, the common film material can be applied to various semiconductor chips having different electrode arrangements. Therefore, only one type of manufacturing apparatus for the etching mask, the mold, etc. is required, and each time the electrode arrangement of the semiconductor chip is changed, the time and labor for changing the etching mask can be saved and the cost can be significantly reduced. This is extremely effective in improving productivity and reducing production cost.

The pattern formation of the inner lead part is performed by laser processing according to the electrode arrangement of the semiconductor chip. In this laser processing, a free processing pattern can be obtained by an NC control program, etc. Then, only by changing the processing program so as to correspond to the electrode arrangement, it is possible to easily and quickly cope with it, and the flexibility becomes extremely high. Moreover, since laser processing is required only in the narrow area of the inner lead portion, there is no fear of impairing the overall productivity or economy without increasing the overall processing time or labor.

Further, since the positioning mark portion is formed at the same time when the pattern of the outer lead portion is formed, the laser processing of the inner lead portion can be performed on the basis of this positioning mark portion, and the outer lead is patterned in a separate process. The position of the inner part and the inner lead part can be accurately and easily aligned.

Since the positioning mark portion is formed at the same time as the outer lead portion and the like, there is no increase in extra work steps or reduction in productivity. The positioning mark part may be formed at an arbitrary position on the film that does not interfere with the lead pattern, and if it is removed before the film carrier is completed, the required area of the film material increases,
The produced film carrier chip does not have a large outer shape. Therefore, there is no concern that the material cost and the manufacturing cost of the film material will increase due to the formation of the positioning mark portion.

As a result, although the film carrier is a bump type film carrier that is suitable for high density electrode arrangement and miniaturization of semiconductor chips, the electrode arrangement of semiconductor chips is as flexible as or better than the conventional wire bonding type. It becomes possible to manufacture a film carrier equipped with, and moreover, it is also excellent in productivity that can surely and easily align the outer lead portion and the inner lead portion which are patterned in separate steps, It will be able to greatly contribute to the expansion of demand and expansion of film carrier chips.

[Brief description of drawings]

FIG. 1 is a plan view of a film material before patterning an inner lead portion, showing an embodiment of the present invention, and FIGS. 2 (a) to 2 (c) are schematic cross-sectional views showing a sequential manufacturing process of a film carrier. , FIG. 3 is a plan view of a film carrier on which a pattern of an inner lead portion is formed, FIGS. 4 (a) and 4 (b) show a conventional wire bonding type film carrier chip, and FIG. Sectional view, FIG. 4 (b) is a bottom view without the sealing resin, FIGS. 5 (a) and 5 (b) show a conventional bump type film carrier chip, and FIG. 5 (a) is a cross section. FIG. 5 (b) is a bottom view of the state in which the sealing resin is removed. 10 …… film, 20 …… lead pattern, 21 …… outer lead part, 22 …… inner lead part, 23 …… inner lead forming part, 29 …… positioning mark part, 30 …… semiconductor chip, 70 …… bump

Claims (1)

[Claims] 1. A film material for manufacturing a film carrier, wherein electrodes of a semiconductor chip mounted on the film are connected to inner lead portions of a lead pattern formed on the film via bumps. Among the lead patterns formed by pattern formation from the conductive metal layer on the film, the outer lead portion whose pattern does not change depending on the electrode arrangement of the semiconductor chip to be mounted is pre-patterned. The inner lead portion whose pattern changes depending on the electrode arrangement is not formed as a pattern and is left as a conductor metal layer to form an inner lead forming portion. Furthermore, from the conductor metal layer on the film, the pattern of the outer lead portion is formed. A positioning mark is also formed at the same time as the formation. Film material for Lum carrier production.