JPH0878428A - Uniform semiconductor treatment method and its device - Google Patents

Abstract

PURPOSE: To provide a method of keeping the entire surface of a semiconductor wafer uniform in temperature distribution. CONSTITUTION: A multi-purpose chuck device 100 having a chamber 112 which keeps a medium 114 inside is provided. Medium 114 is heated by a radio- frequency included heating coil 130 at high temperatures so as to be melted. The medium 114 is made to heat a semiconductor material 118 through the intermediary of a chuck member 116, which isolates the medium 114 from the semiconductor material 118. Heating is carried out by the radio-frequency inducted heating coil 130 to induce a flow of fluid in the medium 114, so that the entire medium 114 can be kept uniform in temperature distribution.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention generally relates to micro
The present invention relates to an electronic device forming (manufacturing) process, and more particularly, to a uniform semiconductor material processing method in a semiconductor device forming apparatus and the apparatus.

[0002]

2. Description of the Related Art In various steps of forming a semiconductor device, a semiconductor wafer is heated or cooled, and a desired formation process is performed on a temperature-controlled semiconductor substrate. In order to achieve good manufacturing process control, the semiconductor substrate must have a uniform temperature distribution over the semiconductor surface to avoid non-uniform formation of the semiconductor substrate and production yield loss.

However, conventional semiconductor processing reactors have been unable to effectively provide a uniform temperature distribution over the entire surface of a semiconductor wafer, especially in high temperature processing. Moreover, conventional forming reactors do not have the flexibility to operate over a wide range from low temperature processing to high temperature processing while maintaining a uniform temperature distribution of the semiconductor wafer. High temperature processing (eg 300 ° C to 1000 ° C) is required in various device formation processing steps in silicon technology. These include chemical vapor deposition (CVD) processes and plasma enhanced CVD (PECVD) processes that deposit various layers of material. Other temperature activated high temperature device formation steps include thermal annealing for implant activation, dopant redistribution and thermal oxidation. Conversely, most plasma etching processes typically require lower substrate temperatures (eg, -150 ° C to 150 ° C).

[0004]

It is apparent from the foregoing that there is a need for a fabrication chuck that maintains a uniform temperature distribution over the surface of a semiconductor wafer substrate material. Further, there is a need for low temperature mass equipment capable of uniform processing of semiconductor wafers over a wide range of processing temperatures for a variety of applications including plasma etching, deposition and thermal annealing.

The uniform semiconductor processing method and apparatus according to the present invention substantially eliminates or reduces the defects and problems associated with conventional heating and cooling chucks in semiconductor processing equipment.

The present invention has a chamber that holds a medium. The chamber is enclosed at one end by a chuck member that separates the medium from the semiconductor wafer that contacts the chuck member within the processing environment outside the chamber. There are radio frequency induction heating coils around the chamber that transform the medium into a hot melt fluid state. The dissolution medium uniformly heats the semiconductor material through the chuck member in a temperature activated forming process.

The present invention provides various technical advantages over conventional semiconductor processing chucks. For example, one of the technical advantages is to provide a uniform temperature distribution on the semiconductor wafer. Furthermore, it is possible to provide uniform high and low temperature semiconductor processing over a wide range of processing temperatures.
A further advantage is to control the temperature of the semiconductor material through rapid application of desired heating and cooling that results in relatively fast heating and cooling rates for rapid wafer temperature control and processing. Other technical advantages will be apparent to those skilled in the art from the following figures, description and claims.

For a better understanding of the present invention and its advantages, refer to the following description in connection with the accompanying drawings. In the drawings, like reference numbers indicate like parts.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1 shows an improved vacuum processor (AVP) device 1.
0 is a schematic diagram of 0. The AVP device 10 includes a display monitor 14
And a computer 12 having a keyboard 16.
A semiconductor wafer is placed in the load lock chamber 18 for formation in the process chamber 19. A multi-purpose chuck device 100 is mounted above the process chamber 19. The AVP device 10 further comprises control panels 20 and 22, a backplane 24 and a power distribution box 26. Gas entering from gas box 28 is injected into process chamber 19. The circuit for the AVP device 10 is arranged in the card cage 30. Throttle control of the AVP device 10 is performed by the throttle valve 32. AV
The P device 10 performs a single wafer forming process.

FIG. 2 is a sectional view of the multipurpose chuck apparatus 100 used in a semiconductor forming apparatus such as the AVP apparatus 10. The multipurpose chuck device 100 has a chamber 112 filled with a medium 114. The medium 114 includes a chuck member 11 having a chuck plate 116 that isolates the medium 114 from the semiconductor material 118 that contacts the chuck plate 116 within the process chamber 119.
Located in contact with 5. The chamber 112 is formed within the melting chamber wall 120. The mixing member assembly 121 includes a stirring cylinder 1
22 and a stirring disc 124, the melting chamber wall 1
It is located in the chamber 112 so as not to come into contact with the chuck plate 20 or the chuck plate 116. The central tube 126 is located entirely inside the mixing member assembly 121,
Connect with chuck plate 116. The multipurpose chuck apparatus 100 further includes an internal insulating jacket 128 that isolates the chamber 112 and the lysis chamber wall 120 from a tube 130 containing a radio frequency (RF) induction heating coil 132. An outer isolation jacket 134 surrounds the tube 130,
It is surrounded by an outer housing 136. Outer housing 136 is fluid cooled via inlet 138.

Tube 130 is used for upper fluid cooling module 14.
It receives fluid from 0 to cool the RF induction heating coil 132 and outputs the fluid via the lower fluid cooling module 142. The mixing member assembly 121 is connected to the inner magnetic assembly 144 and rotates on bearings in response to the outer magnetic assembly 146. The motor 148 operates the pulley assembly 149 to rotate the outer magnetic assembly 146 above the bearings, and in response to rotation of the outer magnetic assembly 146, the inner magnetic assembly 144 and the mixing member assembly 121.
To rotate. Further, the insulating ring 150, the insulating plate 152, the insulating housing 154, the insulating cap 156,
Insulation of the multipurpose chuck apparatus 100 is provided by the insulation member 158, the insulation segment 160, and the insulation block 162.

FIG. 3 is a sectional view of the outer housing 136. The outer housing 136 connects the multipurpose chuck apparatus 100 to the process chamber 119 at the bottom surface 170. The outer housing 136 is used for the multipurpose chuck device 10.
0 components are enclosed within sidewall 172. A pipe 174 is connected to the side wall 172, and a fluid disposed in the side wall 172 from the inlet 138 cools the outer housing 136. Outer housing 136 is preferably made of 316L stainless steel and is about 0.5 inch (1.27 cm) thick.

FIG. 4 is a sectional view of the dissolution chamber 112. The lysis chamber 112 is surrounded by a lysis chamber sidewall 120 and a lysis chamber bottom wall 176. The melting chamber sidewall 120 is a loading block 17 for internal connections and structural bracing within the multipurpose chuck apparatus 100.
8 is connected. The lysis chamber sidewall 120, lysis chamber bottom wall 176, loading block 178, and all enclosed lysis chambers 112 are preferably made of 316L stainless steel and are approximately 0.1 inch (0.254 cm) thick.

FIGS. 5-9 show cross-sectional and plan views of the mixer member assembly 121. FIG. 5 is a cross-sectional view of the mixer member assembly 121. The mixer member assembly 121 has a connecting ring 180 that connects to the sidewall 182. The stirring cylinder 122 is connected to the side wall 182. The side wall 182 is further connected to a stirring disc 124 having an upper stirring fin 184 and a lower stirring fin 186. FIG. 6 is a cross-sectional view of the connection ring 180. The connecting ring 180 attaches the mixing member assembly 121 to the inner magnetic assembly 144. By attaching the connecting ring 180, rotation of the inner magnetic assembly 144 on the bearing causes the mixing member assembly 121 to rotate. FIG. 7 is a sectional view of the stirring cylinder 122. Stirring cylinder 12
2 has a thread 188 that assists in agitating the fluid medium 114 in the chamber 112. FIG. 8 shows a stirring disk 12
4 is a top plan view of FIG. The stirring disk 124 is provided on the side wall 1
82, and rotates according to the rotation of the inner magnetic assembly 144. The upper stirring fins 184 on the stirring disk 124 assist in stirring the fluid medium 114 in the chamber 112. The stirring fin 186 is disposed on the bottom side surface of the stirring disk 124. Agitation disk 124 further includes feedthrough holes 190 that allow medium 114 to flow at maximum flow through agitation disk 124. The central tube 126 extends through the stirring disc 124. All of the components of the mixer member assembly 121 are 3
It is preferably made of 16L stainless steel.

9 and 10 show cross-sectional and plan views of central tube 126 and bottom chuck plate 116. FIG. 9 is a cross-sectional view of central tube 126 and bottom chuck plate 116. The central tube 126 is used for the helium purge of the bottom chuck plate 116 and the bottom chuck plate 1.
Passageway 192 allowing placement of thermocouple in the center of 16
I will provide a. Central tube 126 and bottom chuck plate 116 are preferably made of 316L stainless steel. FIG. 10 is a cross-sectional view of bottom chuck member 115. The chuck member 115 has a radial groove 194 and an annular groove 196 for distribution of the purge gas flow.

11 and 12 show a cross-sectional view and a plan view of the upper fluid cooling module 140. 11 is a cross-sectional view of the upper fluid cooling module 140, and FIG. 12 is a plan view of the upper fluid cooling module 140. The upper fluid cooling module 140 flows into the upper fluid cooling module 140 and into the tube 130 and the RF induction heating coil 1
A fluid receiving tube 1 for receiving a liquid for flowing around 32
Has 98. The upper fluid cooling module 140 is preferably made of aluminum.

13 and 14 show cross-sectional and plan views of the lower fluid cooling module 142. FIG. 13 is a cross-sectional view of the lower fluid cooling module 142. FIG. 14 is a plan view of the lower fluid cooling module 142. The lower fluid cooling module 142 has an outlet pipe 200 that removes fluid from the tube 130, such as inserted into the upper fluid cooling module 140. The lower fluid cooling module 142 is preferably made of aluminum.

15 and 16 show a side view and a plan view of a tube 130 including an RF induction heating coil 132. FIG.
5 is a top plan view of the tube 130 showing an annular configuration. FIG.
6 is a side view of the tube 130. Although shown with eight coil turns, tube 130 may have any number of coil turns.
The tube 130 is preferably made of aluminum or copper alloy.

During operation of the multipurpose chuck device 100, R
The F induction heating coil 130 is activated to bring the medium 114 into a molten state, causing an eddy current loss in the medium 114. FIG. 17
As shown in simplified form in FIG.
Primary current produces an alternate magnetic flux that induces a voltage in the medium 114, and a secondary current flows in the medium 114 in the opposite direction of the first RF induction heating current. The secondary or Focus current causes eddy current losses that heat the medium 114. The eddy current losses also create an intermixing fluid flowing into the medium 114, providing a uniform temperature distribution on the chuck member 116.

6 on the 8-inch chuck member 116
Due to the maximum agitation effect and heating capacity of the inch wafer of semiconductor material 118, the RF induction heating power supply RF1 which drives the RF induction heating coil 130 is rapidly operated on the semiconductor material 118 to a steady temperature of 300 ° C to 1000 ° C. To reach
It has a power output of 5,000-10,000 watts at a frequency of 10-50 KHz. The choice of frequency is determined based on the desired heating, electrical efficiency and desired degree of agitation of the medium 114. Typically, the lowest frequency of the power supply operating the RF induction heating coil 130 maximizes the stirring effect of the medium 114 and directly heats the housing 136, the mixing member assembly 121, the lysis chamber wall 118 and the central tube 126. Is chosen to be minimal. The stirring effect on the medium 114 is 2 ampere of the RF induction heating coil 130.
Proportional to the square.

For low temperature excitation heating, the cylinder may be placed in the medium 114. The cylinder may be made of a high Curie point temperature (above about 1000 ° C.) ferroelectric material. Ferroelectric materials that meet this criterion include cobalt, iron or cobalt iron alloys.

In order to achieve an optimum uniform high temperature distribution regardless of eddy current loss, the medium 114 has a high boiling point (eg
It has a maximum operating temperature, such as 1200 ° C), a low vapor pressure at maximum operating temperature (1 Torr or less), a low melting point (below the desired minimum temperature for high temperature processing), and a low electrical resistance. Metallic materials that meet the above criteria may include tin, indium, gallium. Other metallic materials may be selected for implementation at a particular temperature. The heating rate is the electrical and magnetic properties of the medium 114,
It is a function of the frequency of power supply to the RF induction heating coil 130 and the radius of the cylinder of the chamber 112. Table 1 shows a multi-purpose chuck device 100 having a chamber with a frequency of 45 KHz and a radius of 4 inches.
n) shows the temperature rise.

[Table 1] Table 1 Frequency 45 kHz Medium-tin

While eddy current losses cause intermixing of medium 114, further mixing of medium 114 requires a perfectly uniform temperature distribution on chuck member 116. As shown in FIG. 18, the secondary current induced in the cylindrical medium 114 flows in the annular path distributed in the chamber 112. The secondary current intensity decreases radially,
It provides a higher temperature in the outer portion of the medium 114 closer to the RF induction heating coil 130 than in the portion of the medium 114 closer to the center of the chamber 112. FIG. 19 is a graph of heat density ratios at different points in the chamber 112 holding the medium 114. The material of the medium 114 used,
Depending on the frequency of the RF induction heating coil 130 and the size of the multi-purpose chuck device 100, stirring the medium 114 may require a more perfectly uniform temperature distribution.

To offset this possible temperature non-uniformity of the medium 114 at the wafer contact surface 116,
Mixing member assembly 121 is chamber 11
Located in the second position to provide further mixing of the medium 114. Rotation of outer magnetic assembly 146 causes mixing member assembly 121 to spin within chamber 112 in response to inner magnetic assembly 144. The mixing member assembly 121 includes the stirring fin 18
An agitator disk 124 having 4 and 186 is used to extend the length of the chuck plate 116 to provide a uniform temperature distribution of the medium 114 on the surface of the chuck plate 116, that is, a uniform temperature distribution on the semiconductor wafer 118. Guarantee. A stirring cylinder 122 attached to the mixing member assembly 121 provides mixing of the medium 114 in the chamber 112 near the RF induction heating coil 130. By using the inner magnetic assembly 144 and the outer magnetic assembly 146, the mixing member assembly 121 having the stirring cylinder 122 and the stirring disk 124 vibrates on the semiconductor material 118 without contacting the bottom or sidewall of the chamber 112. Avoid empowering. The magnetic connection arrangement further applies a vacuum to the medium 112 to prevent oxidation of the flowing medium 114 during high temperature processing.
ication). 20 (a) to 20 (c) show the stirring disk 12
4 shows four possible alternative fin configurations. Additional heating may be provided by inducing a fluid, such as a noble gas, above the chamber 112. Fluid is a medium 11 at a specific pressure
4 fills the space in chamber 112 above. The additional energy absorbed in the fluid via plasma generation is transferred to the medium 114 as heat.

FIG. 21 shows an alternative embodiment of the multipurpose chuck device 100. An inlet cooling tube 210 and an outlet cooling tube 212 surround the central tube 126 and are located within the mixing member assembly 121. The inlet cooling pipe 210 and the outlet cooling pipe 212 are isolated from the medium 114 and the mixing member assembly 121. The chuck member 115 has a hole (cavit).
y) 214 for receiving cooling fluid from the inlet cooling pipe 210 and providing distribution through the outlet cooling pipe 212. The cooling fluid may be compressed air or compressed liquefied nitrogen cooled helium.

During low temperature and rapid temperature processing, the inlet cooling tube 210 in the chamber 112 is chilled fluid into the holes 214 in the chuck member 115.
The outlet cooling pipe 212 in the chamber 112.
The cooling fluid may be returned via the. In this way, maximum control of the temperature of the semiconductor material 118 can be achieved. The multipurpose chuck device 100 has an extremely low temperature of about minus 150 ° C to 1000 ° C.
It can vary up to high temperatures above ° C.

FIG. 22 illustrates a possible arrangement of thermocouple devices within chuck member 115 for measuring the temperature of semiconductor material 118. The thermocouple device is disposed in the chuck 115 near the semiconductor material 118 and the semiconductor material 118
The temperature over the entire area can be monitored and controlled. The thermocouple feedthrough and helium purge central tube 126 allows for placement of the thermocouple in the center of the semiconductor material 118 and also allows a fluid such as helium to flow to provide good thermal contact to the backside of the semiconductor material 118. To do. Chuck member 1
By isolating the inlet cooling pipe 210 and the outlet cooling pipe 212 that supply the cooling fluid to 15 from the medium 114 in the chamber 112, effective temperature control of the semiconductor material 118 is ensured.

All insulating layers are multipurpose chuck device 1.
00 outer shell ensures that it remains at room temperature despite the high temperature of the medium 114 in the chamber 112. The outer housing 136 also has a cooling inlet 138 to help flush water through the outer housing 136 to keep the shell of the multipurpose chuck apparatus 100 at room temperature. Further, by flowing water from the upper and lower fluid cooling modules 140 and 142 to the tube 130, the RF induction heating coil 1
32 cooling can be achieved.

The multipurpose chuck device 100 is a chemical vapor deposition
It can be used in various semiconductor processing techniques, including thermal annealing and oxidation, epitaxial growth, and plasma etching. As a further flexibility, the multipurpose chuck device 100 may be constructed of high temperature conductive and resistive non-magnetic metals such as stainless steel or molybdenum for compatibility with magnetron plasma excitation. The semiconductor material 118 may be separated from the chuck plate 116 by an intermediate layer (not shown) to avoid possible contamination of the semiconductor material 118 by the chuck plate 116. The components of multipurpose chuck apparatus 100 avoid high heating of the outer walls (cylinders 136 and 120) directly, thus ensuring high eddy current losses in medium 114 rather than in the outer wall of multipurpose chuck apparatus 100. Have.

In summary, the multipurpose chuck device uses radio frequency induction heating coils to heat the media in the chamber. The medium comprises a material having a low melting point and a high boiling point (low vapor pressure) and relatively low electrical resistance, such as tin, indium, bismuth or alloys thereof. The chuck member isolates the media from the semiconductor wafer located in a processing area suitable for semiconductor processing. The medium heats the semiconductor material through a chuck member for high temperature processing. The RF induction heating coil produces a secondary current in the medium that causes eddy current losses that heat the medium. Eddy current losses also cause fluid flow within the medium, providing a uniform temperature distribution throughout the medium. The mixing member assembly in the chamber further intermixes the media to ensure a perfectly uniform wafer temperature distribution. Extensive temperature control of the semiconductor material can be further achieved via cooling tubes extending into the chuck member within the chamber. The cooling tube is isolated from the medium and provides a cooling fluid such as compressed air or helium to the chuck plate to reduce the temperature of the semiconductor material for temperature control in low temperature and rapid temperature processing. The fluid cooling of the RF induction heating coil and the outer housing of the multi-purpose chuck device, along with proper isolation, ensures that the outer shell of the multi-purpose chuck device is kept at room temperature.

Thus, the present invention provides a method and apparatus for uniform semiconductor material processing that satisfies the above advantages. Having described in detail the preferred embodiment,
It is to be understood that various changes, substitutions and changes can be made. For example, although one side of the chucking device has been described with a particular material, the chucking device may be formed of other materials and other elements with similar effects may be used. It will be apparent to those skilled in the art that other embodiments are possible within the scope of the invention as defined by the appended claims.

With respect to the above description, the following section will be further disclosed. (1) A multi-purpose chuck device for uniform semiconductor material processing, comprising a chamber for holding a medium and a chuck member for enclosing one end of the chamber, the chuck member being outside the chamber. Separating the medium from the semiconductor material that contacts the chuck member,
A device having a radio frequency induction heating coil around the chamber for transforming the medium into a hot melt fluid state, the medium heating the semiconductor material through the chuck member.

(2) The apparatus according to the item (1), further comprising a rotating member in the chamber, wherein the medium mixes the semiconductor material so as to provide a uniform temperature distribution.

(3) In the apparatus according to the second item, it is ensured that the rotating member has a fin attached near the chuck member to provide a uniform temperature distribution to the semiconductor material. apparatus.

(4) The device according to the item (2), further comprising a magnetic rotating device connected to the rotating member, and rotating the rotating member from outside the chamber.

(5) The apparatus according to the item (1), further comprising a cooling pipe in the chamber, and providing a cooling fluid in the chuck member.

(6) The apparatus according to item 5, wherein the semiconductor material is cooled and heated within a temperature range of about minus 150 degrees Celsius to 1000 degrees Celsius or more.

(7) The apparatus according to item 1, further comprising an insulating layer around the radio frequency induction heating coil so that the temperature outside the multipurpose chuck device is about room temperature regardless of the temperature of the medium. A device that guarantees to stay.

(8) An apparatus for providing a uniform temperature distribution to a semiconductor material, comprising a chamber for holding a metal medium and a chuck member for enclosing one end of the chamber, wherein the chuck member is the A radio frequency induction heating coil around the chamber for separating the metallic medium from a semiconductor material outside the chamber in contact with a chuck member, the eddy current loss creating in the metallic medium, The metal medium is heated such that the current loss causes a uniform temperature distribution through the metal medium, an intermixing fluid is flown in the metal medium, and the metal medium heats the semiconductor material through the chuck member. And a heating coil for heating.

(9) In the apparatus described in the item (8), a rotating member is further provided in the chamber, the metal medium is agitated in the vicinity of the chuck member, and the temperature distribution is completely uniform in the semiconductor material. Equipment to get.

(10) The apparatus according to item 9, further comprising a metal rotating device which is connected to the rotating member and rotates the rotating member from the outside of the chamber, wherein the rotating member is inside the chamber. A device that is contacted with the metal medium without contacting the wall.

(11) The apparatus according to item 8, further comprising a cooling pipe for guiding a cooling liquid to the chuck member in the chamber to control the temperature of the semiconductor material.

(12) The apparatus according to item 8, wherein the metal medium is tin.

(13) The apparatus according to item 8, wherein the radio frequency induction heating coil operates within a frequency range of 10-50 kHz.

(14) A method for providing a uniform temperature distribution in a semiconductor forming process, which comprises disposing a metal medium in a chamber enclosed by a chuck member, and reducing eddy current loss in the metal medium. And the eddy current loss causes the heating of the metal medium and the flow of the intermixing fluid within the metal medium to produce a uniform temperature distribution through the metal medium, in contact with the chuck member, of the chamber. Providing heating of the outer semiconductor material.

(15) In the method described in item 14,
The metal medium is agitated to provide a completely uniform temperature distribution within the metal medium near the chuck member such that the semiconductor materials have the same temperature at different points in the total area of the semiconductor material. The method further comprising a step.

(16) In the method described in item 14,
A method comprising inducing a cooling fluid to control the temperature of the semiconductor material in the chamber, the cooling fluid further providing a rapid thermal processing forming capability at low temperatures.

(17) In the method described in item 14,
The method further comprising the step of directing a heating liquid into the chamber to fill the chamber on the metal medium and excite heating of the metal medium.

(18) A multipurpose chuck device having a chamber for holding a medium is disclosed. The medium is heated by a radio frequency induction heating coil until it is in a hot melt state. The medium is a chuck that isolates the medium from the semiconductor material.
The semiconductor material is heated through the member. The heating is provided by a radio frequency induction heating coil, which creates a fluid flow in the medium and provides a uniform temperature distribution throughout the medium. A magnetic rotating device controls the movement of the rotating member with the mixing member and the rotating fins to ensure a perfectly uniform temperature distribution throughout the medium, especially in the vicinity of the chuck member. The inlet and outlet cooling tubes are isolated from the medium and provide a cooling fluid to the chuck member to control the temperature of the semiconductor material.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an improved vacuum processor (AVP) device.

FIG. 2 is a cross-sectional view of a multipurpose chuck device.

FIG. 3 is a cross-sectional view of an outer metal housing of a multipurpose chuck device.

FIG. 4 is a cross-sectional view of a melting chamber of a multipurpose chuck device.

FIG. 5 is a cross-sectional view of a melt mixer member assembly of a melt chamber of a multipurpose chuck device.

FIG. 6 is a cross-sectional view of a connection ring.

FIG. 7 is a sectional view of a stirring cylinder.

FIG. 8 is a top plan view of a stirring disc.

FIG. 9 is a cross-sectional view of a central tube and bottom chuck plate of a multi-purpose chuck device.

FIG. 10 is a cross-sectional view of a bottom chuck member.

FIG. 11 is a cross-sectional view of an upper fluid cooling module of a multi-purpose chuck device.

FIG. 12 is a plan view of an upper fluid cooling module.

FIG. 13 is a cross-sectional view of a lower fluid cooling module of a multipurpose chuck device.

FIG. 14 is a plan view of a lower fluid cooling module.

FIG. 15 is a top plan view of a tube including an RF induction heating coil of a multipurpose chuck device.

FIG. 16 is a side view of a tube containing an RF induction heating coil.

FIG. 17 is a simplified diagram showing a current flow in a chamber of a multipurpose chuck device.

FIG. 18 is a simplified view showing an annular path in the chamber of the multipurpose chuck device.

FIG. 19: Heating density ratio (concentration pe) in the chamber
rcentage) graph.

FIG. 20 shows a possible alternative fin configuration of the stirring disc.

FIG. 21 is a view showing another embodiment of the multipurpose chuck device.

FIG. 22 shows a possible arrangement of thermocouples within a chuck member of a multi-purpose chuck device.

[Explanation of symbols]

 100 multi-purpose chuck device 112 chamber 114 medium 115 chuck member 118 semiconductor material 130 heating induction coil

Claims (2)

[Claims] 1. A multi-purpose chuck apparatus for uniform semiconductor material processing, comprising a chamber for holding a medium and a chuck member for enclosing one end of the chamber, the chuck member being outside the chamber. A radio frequency induction heating coil for separating the medium from the semiconductor material in contact with the chuck member and deforming the medium into a hot melt fluid state around the chamber, the medium being the chuck member. And a coil for heating the semiconductor material through the device. 2. A method for providing a uniform temperature distribution in a semiconductor forming process, comprising: placing a metal medium in a chamber enclosed by a chuck member; and generating an eddy current loss in the metal medium. And the eddy current loss causes heating of the metal medium and flow of an intermixing fluid within the metal medium, a uniform temperature distribution through the metal medium, in contact with the chuck member, outside the chamber. Providing heating of the semiconductor material of.