JPH087754A - Manufacture of shadow mask - Google Patents

Manufacture of shadow mask

Info

Publication number
JPH087754A
JPH087754A JP14490394A JP14490394A JPH087754A JP H087754 A JPH087754 A JP H087754A JP 14490394 A JP14490394 A JP 14490394A JP 14490394 A JP14490394 A JP 14490394A JP H087754 A JPH087754 A JP H087754A
Authority
JP
Japan
Prior art keywords
etching
shadow mask
etching solution
substrate
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14490394A
Other languages
Japanese (ja)
Inventor
Hiroki Tanaka
田中  弘紀
Hiroki Watanabe
弘樹 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP14490394A priority Critical patent/JPH087754A/en
Publication of JPH087754A publication Critical patent/JPH087754A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent poor workmanship of shaping holes in the etching process for a metal base board as a work for a shadow mask resulting from poor performance of the etching operation caused by fine unsoluble foreign matters included in the etching solution. CONSTITUTION:A base board of metal is subjected to an etching process with an etching solution in manufacturing a shadow mask for a color image receiving tube. The sizes and number of pieces of such foreign matters in the solution are controlled so that no more than five pieces of a size exceeding 30um are included in 10ml etching solution.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、カラー受像管に用いら
れるシャドウマスクの製造方法に係わり、特に、金属基
板のエッチング方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a shadow mask used for a color picture tube, and more particularly to a method for etching a metal substrate.

【0002】[0002]

【従来の技術】カラー受像管に用いられるシャドウマス
クの従来の製造方法の一例を、図1を用い簡単に説明す
る。まず、鉄を主成分とする金属材料または、鉄とニッ
ケルを主成分とする金属材料の基板の表面を、アルカリ
液を用い脱脂処理を行ってから、酸処理により基板の表
面の整面を行う。
2. Description of the Related Art An example of a conventional method for manufacturing a shadow mask used for a color picture tube will be briefly described with reference to FIG. First, the surface of a substrate made of a metal material containing iron as a main component or a metal material containing iron and nickel as a main component is subjected to a degreasing treatment using an alkaline solution, and then an acid treatment is performed to adjust the surface of the substrate. .

【0003】次いで、図1(a)に示すように、基板1
の両面にネガ型感光性樹脂2を塗布後、円形パターン部
が遮光部となった例えば約200μmの大孔パターンマ
スク3および約100μmの小孔パターンマスク4の大
孔小孔二種類のパターンマスクを用い、基板1の片面に
大孔パターンマスク3を密着して当て、基板1の他方の
片面に小孔パターンマスク4を対応する位置に密着して
当て、同時に両面に紫外線露光を行い、円形パターン部
以外の領域の感光性樹脂の硬化を行う。
Next, as shown in FIG. 1A, the substrate 1
After coating the negative type photosensitive resin 2 on both sides of the same, the circular pattern part becomes a light shielding part, for example, a large hole pattern mask 3 of about 200 μm and a small hole pattern mask 4 of about 100 μm. Using, the large hole pattern mask 3 is brought into close contact with one surface of the substrate 1, and the small hole pattern mask 4 is brought into close contact with the other surface of the substrate 1 at a corresponding position. The photosensitive resin in the area other than the pattern portion is cured.

【0004】次いで、図1(b)に示すように、例えば
温水スプレーにて現像を行い未露光部の感光性樹脂を除
去後、残った感光性樹脂の硬膜処理およびバーニングを
行う。次いで、図1(c)に示すように、エッチング液
例えば、塩化第二鉄液を用いスプレー法にて、一次エッ
チングを行い、基板両面に一定のエッチングを行う。次
いで、図1(d)に示すように、小孔側にニスを塗布し
てエッチング防止層5を形成する。次いで、図1(e)
に示すように、大孔側に二次エッチングを行い、小孔と
貫通させる。次いで、エッチング防止層5および感光性
樹脂2を除去し、図1(f)のシャドウマスク6を得
る。
Then, as shown in FIG. 1B, for example, development is performed with a hot water spray to remove the photosensitive resin in the unexposed portion, and then the remaining photosensitive resin is subjected to film hardening treatment and burning. Next, as shown in FIG. 1C, an etching solution, for example, a ferric chloride solution is used to perform a primary etching by a spray method, and a constant etching is performed on both surfaces of the substrate. Next, as shown in FIG. 1D, a varnish is applied to the small hole side to form the etching prevention layer 5. Then, FIG. 1 (e)
As shown in FIG. 2, secondary etching is performed on the large hole side to penetrate the small hole. Then, the etching prevention layer 5 and the photosensitive resin 2 are removed to obtain the shadow mask 6 of FIG.

【0005】しかし、上記エッチング工程に使用するエ
ッチング液は生産コストおよび手間の問題により、使い
捨てではなく、配管とポンプで循環させて再使用するの
が普通である。そのため、エッチング液中には、エッチ
ング工程で基板から剥がれた感光性樹脂やエッチング防
止層および、基板の金属粉などの微細な不溶の異物が多
く含まれている。そのため、基板のエッチング工程中
に、基板表面にエッチング液中の異物が付着し、その異
物がエッチング液と基板との接触を妨げることによりエ
ッチング不良が生じ、図2および図3に示すような孔の
形状不良を起こすという問題点がある。
However, the etching solution used in the above etching process is not disposable but is usually recycled by being circulated by a pipe and a pump because of the problems of production cost and labor. Therefore, the etching solution contains a large amount of fine insoluble foreign matters such as the photosensitive resin and the etching prevention layer that are peeled off from the substrate in the etching process, and the metal powder of the substrate. Therefore, during the etching process of the substrate, foreign matter in the etching liquid adheres to the surface of the substrate, and the foreign matter interferes with the contact between the etching liquid and the substrate, resulting in poor etching, and the holes shown in FIGS. However, there is a problem in that the defective shape is caused.

【0006】ここで、図2では異物による孔詰まりによ
り、孔の開くべき箇所Aに孔の開かなかった例を示し、
図3では孔Bに示すように異物による孔の形状不良の例
を示す。
Here, FIG. 2 shows an example in which the hole is not opened at the place A where the hole should be formed due to the clogging of the hole by foreign matter.
FIG. 3 shows an example of a defective shape of the hole due to a foreign substance as shown by hole B.

【0007】[0007]

【発明が解決しようとする課題】本発明の目的は、カラ
ー受像管に用いられるシャドウマスクの製造方法に係わ
り、特に、金属基板のエッチング工程において、上記し
たような問題点を有しないシャドウマスクの製造方法を
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention relates to a method for manufacturing a shadow mask used for a color picture tube, and more particularly to a shadow mask which does not have the above problems in the etching process of a metal substrate. It is to provide a manufacturing method.

【0008】[0008]

【課題を解決するための手段】すなわち、本発明は、シ
ャドウマスクの製造における、金属基板のエッチング工
程において、金属基板のエッチングに用いるエッチング
液中の異物の大きさおよび個数を、エッチング液10m
l中に30μm以上の大きさの異物を5個以下に管理す
ることを特徴とするシャドウマスクの製造方法を提供す
ることにより、上記の課題を解決しようとするものであ
る。
That is, according to the present invention, in the step of etching a metal substrate in the production of a shadow mask, the size and the number of foreign matters in the etching liquid used for etching the metal substrate are set to 10 m.
It is an object of the present invention to solve the above-mentioned problems by providing a shadow mask manufacturing method characterized in that the number of foreign matters having a size of 30 μm or more in 1 is controlled to 5 or less.

【0009】本発明の一例を、図4の工程フロー図を用
い説明を行う。まず、従来工程により、鉄を主成分とす
る金属材料または、鉄とニッケルを主成分とする金属材
料の基板の表面の脱脂、整面処理を行う。次いで、基板
の両面にネガ型感光性樹脂を塗布後、円形パターン部が
遮光部となった大孔パターンマスクおよび小孔パターン
マスクの大孔小孔二種類のパターンマスクを用い、基板
の片面に大孔パターンマスクを密着して当て、基板の他
方の片面に小孔パターンマスクを対応する位置に密着し
て当て、同時に両面に紫外線によるパターン露光を行
い、円形パターン部以外の領域の感光性樹脂の硬化を行
う。
An example of the present invention will be described with reference to the process flow chart of FIG. First, in a conventional process, the surface of a substrate made of a metal material containing iron as a main component or a metal material containing iron and nickel as a main component is degreased and surface-treated. Then, after coating the negative type photosensitive resin on both sides of the substrate, using a large-hole pattern mask with a circular pattern part as a light-shielding part and a large-hole pattern hole with a small-hole pattern mask, on one side of the substrate The large-hole pattern mask is applied in close contact, and the small-hole pattern mask is applied in close contact with the other side of the substrate at the corresponding position. At the same time, both sides are subjected to pattern exposure by ultraviolet light, and the photosensitive resin in the area other than the circular pattern area Cure.

【0010】次いで、例えば温水スプレーにて現像を行
い未露光部の感光性樹脂を除去後、残った感光性樹脂の
硬膜処理およびバーニングを行う。次いで、エッチング
液例えば、塩化第二鉄液を用いスプレー法にて、一次エ
ッチングを行い、基板両面に一定のエッチングを行う。
次いで、小孔側にニスを塗布してエッチング防止層を形
成する。次いで、大孔側に二次エッチングを行い小孔と
貫通させる。次いで、エッチング防止層および感光性樹
脂を除去して、シャドウマスクを得る。
Next, for example, by developing with hot water spray to remove the photosensitive resin in the unexposed area, the remaining photosensitive resin is subjected to film hardening treatment and burning. Then, an etching solution, for example, a ferric chloride solution is used to perform a primary etching by a spraying method, and a certain amount of etching is performed on both surfaces of the substrate.
Next, a varnish is applied to the small hole side to form an etching prevention layer. Then, secondary etching is performed on the large hole side to penetrate the small hole. Then, the etching prevention layer and the photosensitive resin are removed to obtain a shadow mask.

【0011】ここで、本発明にあっては図4に示すよう
に、別工程にてエッチング工程に入る前に、一次エッチ
ングおよび二次エッチングに用いるエッチング液中の異
物の大きさおよび数を粒度分布計により測定を行う。次
いで、エッチング液10ml中に30μm以上の大きさ
の異物が6個以上あった場合、フィルターを用いエッチ
ング液の濾過を行い異物の除去を行い、エッチング液1
0ml中に30μm以上の大きさの異物が5個以下とし
たエッチング液を用い、一次エッチングおよび二次エッ
チングを行う。
Here, in the present invention, as shown in FIG. 4, the size and number of foreign matters in the etching solution used for the primary etching and the secondary etching are granularized before starting the etching step in another step. Measure with a distribution meter. Next, when 6 or more foreign substances having a size of 30 μm or more are present in 10 ml of the etching liquid, the etching liquid is filtered using a filter to remove the foreign substances.
Primary etching and secondary etching are performed using an etching solution containing 5 or less foreign matters having a size of 30 μm or more in 0 ml.

【0012】ここで、本発明の条件である、エッチング
液10ml中に30μm以上の大きさの異物が5個以下
の条件は、エッチング液中の異物の大きさと数を変えて
実際にエッチングを行い孔形不良の発生しない条件とし
て、以下に示す実施例から経験的に得た。
Here, under the condition of the present invention, that is, the condition that there are 5 or less foreign matters having a size of 30 μm or more in 10 ml of the etching solution, etching is actually performed by changing the size and the number of the foreign matters in the etching solution. The conditions for preventing the defective shape of the holes were empirically obtained from the following examples.

【0013】[0013]

【作用】上記の条件を守ることにより、エッチングの際
に、孔形状に影響を及ぼす大きさのエッチング液中の異
物を除去することにより、異物がエッチング液と基板と
の接触を妨げることがなくなる。
By complying with the above conditions, foreign matter in the etching solution having a size that affects the hole shape is removed during etching, so that the foreign matter does not interfere with the contact between the etching solution and the substrate. .

【0014】[0014]

【実施例】本発明の一実施例を、以下に示す。 <実施例>まず、公知の方法にて、図1の工程に従いシ
ャドウマスクの製造を行った。その際、エッチング工程
のエッチング液として塩化第二鉄溶液(ボーメ濃度45
度、液温50℃)を用い、スプレー法(スプレー圧2.
0Kg/cm2 )にて、エッチングを行った。その後、
製造されたシャドウマスクの欠陥を調べたところ10枚
中4枚の割合でエッチング時の異物を原因とする孔形不
良が認められた。
EXAMPLE An example of the present invention is shown below. <Example> First, a shadow mask was manufactured by a known method according to the process of FIG. At that time, ferric chloride solution (Baume concentration 45
Spraying method (spray pressure 2.
Etching was performed at 0 kg / cm 2 ). afterwards,
When the defects of the manufactured shadow mask were examined, a hole defect due to a foreign substance at the time of etching was recognized in a ratio of 4 out of 10 plates.

【0015】その時の、エッチング液中の異物の大きさ
および数をCLIMET社製パーティクルカウンター
(本体CI−1000、サンプラーCI−1010、セ
ンサーRLV2−100H)を使用し、測定条件として
サンプル液量10ml/回、流量25ml/分、風袋量
3ml/回にて4回エッチング液中の粒子の大きさと数
の測定を行った。次いで、始めの一回目の測定値は測定
誤差が大きいため用いず、後の3回の測定値の平均を求
めた結果を表1に示す。表1の横軸に異物の大きさ(μ
m)を、縦軸に異物の測定個数の3回の平均値(個)を
示す。
At that time, the size and the number of foreign matters in the etching solution were measured using a particle counter (main body CI-1000, sampler CI-1010, sensor RLV2-100H) manufactured by CLIMET, and the sample liquid amount was 10 ml / The amount and number of particles in the etching solution were measured 4 times at a flow rate of 25 ml / min and a tare amount of 3 ml / time. Next, the measurement value of the first measurement is not used because of a large measurement error, and the results of obtaining the average of the measurement values of the subsequent three measurements are shown in Table 1. The horizontal axis of Table 1 shows the size of foreign matter (μ
m), and the vertical axis represents the average value (pieces) of the number of foreign particles measured three times.

【0016】[0016]

【表1】 [Table 1]

【0017】次いで、本発明の製造工程に従い、上記エ
ッチング液を孔径25μmのポリプロピレン製フィルタ
ーで異物を濾過し、他は上記と同様の工程にてシャドウ
マスクの製造を行い、シャドウマスクのエッチング時の
異物を原因とする孔形不良の欠陥を調べたところ、異物
による孔形不良は認められなかった。その時の、エッチ
ング液中の異物の大きさおよび数を上記の測定機および
測定条件にて測定した結果を表2に示す。表2の横軸に
異物の大きさ(μm)を、縦軸に異物の測定個数の3回
の平均値(個)を示す。
Then, according to the manufacturing process of the present invention, the above etching solution is filtered through a polypropylene filter having a pore size of 25 μm to remove foreign matters, and the shadow mask is manufactured by the same process as above except that the shadow mask is etched. When the defect of the defective shape due to the foreign matter was examined, no defective shape due to the foreign matter was found. Table 2 shows the results of measuring the size and the number of foreign matters in the etching solution at that time using the above-described measuring machine and measuring conditions. The horizontal axis of Table 2 shows the size (μm) of the foreign matter, and the vertical axis shows the average value (number) of the number of foreign matter measured three times.

【0018】[0018]

【表2】 [Table 2]

【0019】表1に示すように、エッチング液10ml
中に30μm以上の異物が平均6個以上ある場合は孔形
不良が多発した。表2に示すように、エッチング液10
ml中に30μm以上の異物が平均5個以下の場合は孔
形不良が発生しない。
As shown in Table 1, 10 ml of etching solution
When there were an average of 6 or more foreign substances having a size of 30 μm or more, defective pores frequently occurred. As shown in Table 2, the etching solution 10
If the average number of foreign matter having a size of 30 μm or more in 5 ml is 5 or less, no defective pore shape occurs.

【0020】[0020]

【発明の効果】本発明によるシャドウマスクの製造で
は、エッチング工程において、エッチング液中の異物の
大きさおよび数を事前に管理することにより、異物の大
きさおよび数を原因とする孔形不良が防げる。また、エ
ッチング能力のあるうちは、エッチング液を繰り返し再
利用でき、エッチング液中の異物の数値測定により、エ
ッチング液の異物濾過を不必要に行うことなく効率よく
行うことにより、生産工数および生産コストの低減がで
きるなど実用上優れた効果が得られる。
In the production of the shadow mask according to the present invention, by controlling the size and the number of foreign matters in the etching solution in advance in the etching process, the hole shape defect caused by the size and the number of foreign matters is prevented. Can be prevented. In addition, as long as it has etching capability, the etching solution can be reused repeatedly, and by numerically measuring the foreign matter in the etching solution, the foreign matter in the etching solution can be efficiently filtered without unnecessary filtration. It is possible to obtain practically excellent effects such as reduction of

【0021】[0021]

【図面の簡単な説明】[Brief description of drawings]

【図1】シャドウマスクの製造方法の一例を示す説明
図。
FIG. 1 is an explanatory view showing an example of a method for manufacturing a shadow mask.

【図2】異物によるエッチング形状不良の一例を示す説
明図。
FIG. 2 is an explanatory diagram showing an example of an etching shape defect due to a foreign substance.

【図3】異物によるエッチング形状不良の他の例を示す
説明図。
FIG. 3 is an explanatory view showing another example of etching shape defect due to a foreign substance.

【図4】本発明によるシャドウマスクの製造方法の一例
を示す工程フロー図。
FIG. 4 is a process flow chart showing an example of a method for manufacturing a shadow mask according to the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 感光性樹脂 3 大孔パターンマスク 4 小孔パターンマスク 5 エッチング防止層 6 シャドウマスク 1 Substrate 2 Photosensitive Resin 3 Large Hole Pattern Mask 4 Small Hole Pattern Mask 5 Etching Prevention Layer 6 Shadow Mask

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】カラー受像管に用いられるシャドウマスク
の製造における、金属基板のエッチング工程において、
金属基板のエッチングに用いるエッチング液中の異物の
大きさおよび個数を、エッチング液10ml中に30μ
m以上の大きさの異物を5個以下に管理することを特徴
とするシャドウマスクの製造方法。
1. In a process of etching a metal substrate in the production of a shadow mask used for a color picture tube,
The size and number of foreign matter in the etching solution used for etching the metal substrate is 30 μm in 10 ml of the etching solution.
A method of manufacturing a shadow mask, characterized in that the number of foreign matters having a size of m or more is controlled to 5 or less.
JP14490394A 1994-06-27 1994-06-27 Manufacture of shadow mask Pending JPH087754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14490394A JPH087754A (en) 1994-06-27 1994-06-27 Manufacture of shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14490394A JPH087754A (en) 1994-06-27 1994-06-27 Manufacture of shadow mask

Publications (1)

Publication Number Publication Date
JPH087754A true JPH087754A (en) 1996-01-12

Family

ID=15372993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14490394A Pending JPH087754A (en) 1994-06-27 1994-06-27 Manufacture of shadow mask

Country Status (1)

Country Link
JP (1) JPH087754A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8495054B2 (en) 2011-02-07 2013-07-23 Mitsubishi Electric Corporation Logic diagram search device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8495054B2 (en) 2011-02-07 2013-07-23 Mitsubishi Electric Corporation Logic diagram search device

Similar Documents

Publication Publication Date Title
US4174219A (en) Method of making a negative exposure mask
CA1079614A (en) Etching composition and method for using same
DE102006029720A1 (en) Method and system for preventing defect formation in immersion lithography
JPS58167196A (en) Base material made of plate-shaped, sheet-shaped or beltlike aluminum or its alloy for offset printing plate, its manufacture and manufacture of offset printing plate, one surface or both surface thereof has photosensitive film
JPH087754A (en) Manufacture of shadow mask
EP0101752A1 (en) Reversal process for the production of chromium masks
US3542612A (en) Photolithographic masks and methods for their manufacture
DE3134054A1 (en) ELECTROCHEMICAL DEVELOPMENT METHOD FOR REPRODUCTION LAYERS
JP3783169B2 (en) Water-soluble photoresist composition
JPS5979248A (en) Photosensitive composition
KR860000433B1 (en) Manufacturing method of shadow mask
JPS6070186A (en) Production of shadow mask
JPH0379858B2 (en)
JPH0346222A (en) Resist supply device
Tilsley et al. New High‐resolution Dry Film Photoresist
JP2007012974A (en) Method of forming resist film
JPS6034015A (en) Pattern formation
JPH0429174B2 (en)
JP4421706B2 (en) Method for manufacturing metal part having plating pattern on surface
US2328371A (en) Lithographic plate preparation
JPH05241353A (en) Hardening treatment of water-soluble photoresist pattern
CN103203957B (en) A kind of manufacture method of stepped formwork
RU2484512C1 (en) Non-metal positive photoresist developer
JPS6213027A (en) Defect inspecting method for photomask
JPS58126988A (en) Manufacture of shadow mask