JPH087640Y2 - Glass-sealed semiconductor device package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a semiconductor element housing package for housing a semiconductor integrated circuit element, and more particularly to a glass-sealed semiconductor element housing package for sealing the package by glass welding. Related to the improvement of.

(Prior art and its problem) Conventionally, a glass-sealed semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element,
As shown in FIG. 2, an insulating substrate 11 having a rectangular concave portion 11a for accommodating a semiconductor element in the central portion and a low melting point amorphous glass layer 12 for sealing is attached to the upper surface thereof. Similarly, a lid 13 having a recess for accommodating a semiconductor element in the center, and a low melting point amorphous glass layer 14 for sealing is attached to the lower surface,
It is configured by an external lead terminal 15 for electrically connecting the semiconductor element housed inside to an external electric circuit, and the external lead terminal 15 is placed on the upper surface of the insulating substrate 11 and previously attached. The external lead terminal 15 is temporarily fixed to the insulating base 11 by melting the low melting amorphous glass layer 12 for sealing, and then the recess 11a of the insulating base 11 is formed.
The semiconductor element 16 is attached to the external lead terminal 15 via the bonding wire 17 to each electrode of the semiconductor element 16.
Then, the insulating base material 11 and the lid body 13 are melt-integrated with the low melting point amorphous glass layers 12 and 14 for sealing, which are adhered to the main surfaces of the insulating base material 11 and the lid 13 which are in contact with each other. A semiconductor device is obtained by hermetically sealing a container composed of 11 and the lid 13.

However, in this conventional glass-sealed semiconductor element housing package, when the semiconductor element 16 is attached to the concave portion 11a of the insulating base 11, the insulating base 11 is provided in order to strengthen the attachment of the semiconductor element 16. The low melting point amorphous glass layer 12 for sealing, which temporarily fixes the external lead terminals 15 to the upper surface of the insulating substrate 11 by heating to 450 ° C., softens and melts, and the insulating substrate The attachment position of the external lead terminal 15 on the upper surface of 11 varies, which makes it difficult to perform relative positioning between the external lead terminal 15 and the insulating substrate 11. Further, there is a drawback that the melted low melting point amorphous glass layer 12 for sealing flows toward the semiconductor element 16 and contaminates the semiconductor element 16.

Therefore, in order to eliminate the above-mentioned drawbacks, it has been proposed to use, as the glass for fixing the external lead terminals 15 on the insulating substrate 11, a high melting point crystalline glass that does not soften and melt even by the heat of fixing and fixing the semiconductor element 16. Yes (actual public Sho 63-3166
No.).

However, in this glass-sealed semiconductor element housing package using crystalline glass, an external force is applied to the external lead terminal 15 fixed to the upper surface of the insulating substrate 11 via the crystalline glass, and the external lead terminal 15 Is bent downward to be processed into a J-shape or the like, the bending stress and the stress due to the difference in the thermal expansion coefficient between the insulating substrate 11 and the crystalline glass synergize with each other to form the insulating substrate 11 of the crystalline glass. Interface, especially insulating substrate 11
A large amount of cracks are generated at the interface in the outer peripheral portion of the semiconductor element 16, which breaks the hermetic sealing of the container that houses the semiconductor element 16 and cannot operate the semiconductor element 16 housed inside normally and stably for a long period of time. Had.

In the glass industry, it is known that cracks generated in glass can be removed by remelting the glass. Therefore, even in this glass-sealed semiconductor element housing package, it is conceivable to remelt the cracks generated in the crystalline glass to a crystallized state of the crystalline glass, thereby removing the cracks. Since it lacks in viscosity, even if it is remelted, the crack cannot be completely filled, and the above-mentioned drawback cannot be effectively eliminated.

(Purpose of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to completely hermetically seal the semiconductor element housed therein, and to keep the semiconductor element normal and stable for a long period of time. An object of the present invention is to provide a glass-sealed semiconductor element housing package that can be operated.

(Means for Solving the Problems) The present invention has an insulating substrate in which an external lead terminal for electrically connecting a semiconductor element to an external circuit is fixed by a crystallized glass melted and crystallized, and the insulating substrate is lower than the crystalline glass. And a lid provided with a glass member that softens and melts at a temperature. The glass member of the lid is heated and melted on an insulating base, and the insulating base and the lid are joined to hermetically seal a semiconductor element inside. In a package for housing a glass-sealed semiconductor element, the amorphous substance having a softening melting temperature between the insulating substrate and the crystalline glass which is lower than that of the crystalline glass and higher than that of the glass member of the lid. It is characterized by arranging the glass layer of.

(Embodiment) Next, the present invention will be described in detail based on an embodiment shown in FIG.

FIG. 1 shows an embodiment of a package for housing a glass-sealed semiconductor element of the present invention, in which 1 is an insulating base made of an electrically insulating material such as alumina ceramics and 2 is a lid made of the same electrically insulating material. The insulating base 1 and the lid 2 constitute an insulating container for housing the semiconductor element.

A recess for accommodating a semiconductor element is provided in the center of each of the insulating base 1 and the lid 2, and the semiconductor element 3 is bonded to the bottom surface of the recess 1a of the insulating base 1 with resin, glass, brazing material or the like. It is attached and fixed through the material.

The insulating base body 1 and the lid body 2 are formed by adopting a conventionally well-known press molding method. For example, when the insulating base body 1 and the lid body 2 are made of alumina ceramics, the insulating body as shown in FIG. A powder of alumina ceramics is filled in a press die having a shape corresponding to the base body 1 or the lid body 2 and a constant pressure is applied to perform molding.
Thereafter, the molded product is manufactured by firing at a temperature of about 1500 ° C.

One end of an external lead terminal 4 made of a metal material such as Kovar (Fe-Ni-Co alloy) or 42Alloy (Fe-Ni alloy) is attached and fixed to the upper surface of the insulating substrate 1 by a glass member 5. The electrodes of the semiconductor element 3 are electrically connected to the external lead terminals 4 through the wires 6, and the semiconductor element 3 is connected to the external circuit by connecting the external lead terminals 4 to the external circuit.

The glass member 5 for attaching and fixing the external lead terminal 4 to the upper surface of the insulating substrate 1 is made of crystalline glass, and once the glass member 5 made of crystalline glass is crystallized, it is heated to an extremely high temperature (for example, about 600 ° C.). Unless it is softened and melted, the external lead terminal 4 is not melted.
The semiconductor element 3 in the concave portion 1a of the insulating substrate 1 fixed via the
When attaching, the glass member 5 does not soften or melt even if the insulating substrate 1 is heated to about 450 ° C. in order to strengthen the attachment strength of the semiconductor element 3, and the external lead terminal 4
The relative positioning on the upper surface of the insulating substrate 1 is completed, and the glass member 5 does not melt and adhere to the semiconductor element 3 to contaminate the semiconductor element 3.

The glass member 5 is, for example, 60 wt% lead oxide (PbO).
%, Zinc oxide (ZnO) 9.0 wt%, zirconium oxide (ZrO
2) 9.0wt%, Boron oxide (B2O3) 9.0wt%, Silicon oxide (SiO2) 8.5wt% etc., the crystallization temperature is about 500
℃, the temperature for softening and melting after crystallization is about 600
° C.

As a method of attaching and fixing the external lead terminal 4 to the upper surface of the insulating substrate 1 using the glass member 5, first, an appropriate solvent is added to the above-mentioned glass raw material powder to prepare a glass paste, and the glass paste is also added. Is printed and applied on the upper surface of the insulating substrate 1 by screen printing known in the art.

Next, one end of the external lead terminal 4 is placed on the glass paste applied to the insulating substrate 1 and heated to a temperature of about 500 ° C. to transform the glass paste into semi-crystallized glass to insulate the external lead terminal 4. Temporarily fixed to the upper surface of the base 1.

Then, an external force is applied to the other end of the temporarily fixed external lead terminal 4 to bend the external lead terminal 4 into a J-shape or the like.

Finally, the semi-crystallized glass in which the external lead terminals 4 are temporarily fixed is heated again to about 500 ° C., remelted, and completely crystallized.

Further, a glass member 7 made of low melting point amorphous glass is adhered to the lower surface of the lid body 2, and the glass member 7 attaches the lid body 2 to the upper surface of the insulating substrate 1 to form an insulating container. It works to hermetically seal the inside.

The glass member 7 is composed of 75 wt% lead oxide (PbO), 9.0 wt% titanium oxide (TiO2), 7.5 wt% boron oxide (B2O3),
A glass paste made of zinc oxide (ZnO) 2.0 wt% or the like and obtained by adding an appropriate solvent to the glass raw material powder is applied to the lower surface of the lid 2 by adopting a conventionally known thick film technique such as screen printing. It is deposited to a desired thickness.

Since the glass member 7 has a low softening / melting temperature of about 400 ° C.,
When the lid 2 is attached to the upper surface of the insulating substrate 1 to hermetically seal the insulating container by heating to a temperature of ° C, heat of the hermetic sealing is applied to the glass member 5 attached to the upper surface of the insulating substrate 1. Even if the glass member 5 is not softened and melted at all, the external lead terminal 4 can be always fixed and placed in a predetermined position.

In the outer peripheral portion of the upper surface of the insulating substrate 1, the temperature between the insulating substrate 1 and the glass member 5 made of crystalline glass is lower than that of the glass member 5 and higher than that of the glass member 7 attached to the lid 2. An amorphous glass layer 8 that softens and melts at a temperature is arranged.

A glass member 5 composed of this insulating substrate 1 and crystalline glass
If the amorphous glass layer 8 is provided between the amorphous glass layer 8 and the external lead terminal 4, the stress applied to the glass member 5 is directly transmitted to the amorphous glass layer 8 when the external lead terminal 4 is bent into a J-shape. Cracks occur in layer 8.

However, since the cracks can be removed by remelting the amorphous glass, the cracks generated can be completely removed by reheating the amorphous glass layer 8 and remelting it. It becomes possible to complete the hermetic sealing of the insulating container that houses the semiconductor element.

Since the amorphous glass layer 8 is made of amorphous glass that softens and melts at a lower temperature than the glass member 5 made of crystalline glass, the heat for remelting the amorphous glass layer 8 is applied to the glass member. Glass member 5 even when applied to
Never softens and melts, and always uses the external lead terminal 4
Firmly and in place.

Further, since the amorphous glass layer 8 is made of amorphous glass that softens and melts at a higher temperature than the glass member 7 adhered to the lid body 2, the glass member 7 is heated and melted to form the lid body 2.
Even if heat is applied to the amorphous glass layer 8 when attaching the insulating substrate 1 to the insulating substrate 1, the amorphous glass layer 8 does not soften and melt at all, and the insulating substrate 1 and the glass member 5 are It exists as it is in between.

The amorphous glass layer 8 is, for example, 60 wt% lead oxide (PbO).
%, Boron oxide (B2O3) 12 wt%, silicon oxide (SiO2)
It consists of 10wt%, aluminum oxide (Al2O3) 10wt%, zinc oxide (ZnO) 5wt%, etc., and its softening and melting temperature is about 500 ℃.
It is an amorphous glass.

The method of disposing the amorphous glass layer 8 between the insulating substrate 1 and the glass member 5 is as follows: the glass paste using the glass raw material powder to form the amorphous glass layer 8 on the insulating substrate 1 and the glass member 5. A glass paste using the above glass raw material powder is sequentially applied by a thick film method, and then this is heated to a temperature of about 500 ° C. to melt the amorphous glass layer 8 on the insulating substrate 1, and further this amorphous It is performed by fusing the crystallized glass member 5 on the quality glass layer 8.

The amorphous glass layer 8 may be provided on the entire surface between the insulating substrate 1 and the glass member 5, and the external lead terminal 4 may be provided.
It may be arranged on a part of the outer peripheral portion of the upper surface of the insulating substrate 1 where the stress during bending is concentrated.

Thus, according to this semiconductor element housing package,
The semiconductor element 3 is attached and fixed to the bottom surface of the concave portion 1a of the insulating base 1, and each electrode of the semiconductor element 3 is connected to the external lead terminal 4 by the wire 6, and then the insulating base 1 and the lid 2 are covered. The glass member 7 previously adhered to the lower surface of 2 is heated and melted and bonded to hermetically seal the semiconductor element 3 inside, whereby a semiconductor device as a final product is completed.

(Effects of the Invention) The present invention has an insulating base material in which an external lead terminal for electrically connecting a semiconductor element to an external circuit is fixed by a melt-crystallized crystalline glass, and softens and melts at a temperature lower than that of the crystalline glass. And a lid provided with a glass member. The glass member of the lid is heated and melted on an insulating substrate, and the insulating substrate and the lid are joined to hermetically seal the semiconductor element inside. In the glass-sealed semiconductor element storage package, an amorphous glass layer that softens and melts at a temperature lower than the crystalline glass and higher than the glass member of the lid is provided between the insulating substrate and the crystalline glass. By arranging them, it is possible to effectively remove cracks generated in the glass member fixing the external lead terminals due to the stress when bending the external lead terminals. As a result, the airtight sealing of the insulating container housing the semiconductor element is completed, and the semiconductor element housed inside can be normally and stably operated for a long period of time.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a glass-sealed semiconductor element housing package according to the present invention, and FIG. 2 is a sectional view showing a conventional glass-sealed semiconductor element housing package. 1 ... Insulating substrate 2 ... Lid 4 ... External lead terminal 5 ... Glass member made of crystalline glass layer 7 ... Glass member attached to lid 8 ... Amorphous glass layer

Claims (1)

[Scope of utility model registration request] 1. An insulating substrate in which an external lead terminal for electrically connecting a semiconductor element to an external circuit is fixed by a melt-crystallized crystalline glass, and a glass member which softens and melts at a lower temperature than the crystalline glass. It consists of a lid with
A glass-sealed semiconductor element housing package, wherein a glass member of the lid is heated and melted on an insulating base, and the insulating base and the lid are joined to hermetically seal the semiconductor element therein. A glass-sealed semiconductor characterized in that an amorphous glass layer having a softening and melting temperature lower than that of the crystalline glass and higher than that of the glass member of the lid is arranged between the insulating substrate and the crystalline glass. Device storage package.