JPH0864648A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPH0864648A
JPH0864648A JP6221173A JP22117394A JPH0864648A JP H0864648 A JPH0864648 A JP H0864648A JP 6221173 A JP6221173 A JP 6221173A JP 22117394 A JP22117394 A JP 22117394A JP H0864648 A JPH0864648 A JP H0864648A
Authority
JP
Japan
Prior art keywords
chip
pad
probe
evaluation circuit
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6221173A
Other languages
Japanese (ja)
Inventor
Yukiaki Yoshino
幸明 吉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP6221173A priority Critical patent/JPH0864648A/en
Publication of JPH0864648A publication Critical patent/JPH0864648A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor wafer in which the time required for evaluating an LSI can be shortened by limiting the movement of a probe. CONSTITUTION: The constitution of an integrated circuit chip 2 to be formed on a semiconductor wafer is divided into a plurality of groups each formed with an evaluation circuit part 1. The evaluation circuit part is provided with pads 3, 5 for touching a probe, and a decode means 4 connected with the I/O pad of each chip in each group in order to decode a chip selection signal being inputted from the probe touching pad and to connect the probe touching pad with a selected chip.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、LSIのテスト評価に
適した半導体ウエハに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer suitable for LSI test evaluation.

【0002】[0002]

【従来の技術】従来のLSI製造工程に於ては、図5に
示すように、製品チップ(被評価チップ)部2のみが半
導体ウエハ12上に形成されており、各LSIの電気的
特性の評価は、各製品チップ部2個々のパッドにプロー
ブを接触させて1チップずつ電気的特性を測定する方法
で行われている。従って、この従来法では、各LSIの
パッド配置に合わせてプローブを配置した専用のプロー
ブカードを作成する必要があった。
2. Description of the Related Art In a conventional LSI manufacturing process, as shown in FIG. 5, only a product chip (chip to be evaluated) portion 2 is formed on a semiconductor wafer 12, and the electrical characteristics of each LSI are The evaluation is performed by a method in which a probe is brought into contact with each pad of each of the product chip portions 2 and the electrical characteristics of each chip are measured. Therefore, in this conventional method, it is necessary to create a dedicated probe card in which the probes are arranged according to the pad arrangement of each LSI.

【0003】一方、大容量DRAM等、1チップの評価
に時間のかかるメモリや、評価が困難なロジックICの
評価では、評価を容易にするために、自己評価用回路を
各チップに内蔵させている。
On the other hand, in the evaluation of a memory such as a large capacity DRAM, which requires a long time to evaluate one chip, or a logic IC which is difficult to evaluate, a self-evaluation circuit is built in each chip in order to facilitate the evaluation. There is.

【0004】[0004]

【発明が解決しようとする課題】上記、従来の方法で
は、1チップずつウエハを移動させて評価を行うために
評価に時間がかかる上、パッド周辺のデザインルールが
プローブによる制約を受ける場合がある。また、プロー
ブカードが各製品のパッド配置に合わせた仕様になって
いるので、他の製品との互換性がない。他方、自己評価
用回路を内蔵したLSIにあっては、製品としての使用
には不必要な自己評価用回路を内蔵させるため、チップ
面積が増大する不都合がある。
In the above-mentioned conventional method, since the evaluation is performed by moving the wafer one chip at a time, the evaluation takes time, and the design rule around the pad may be restricted by the probe. . Moreover, since the probe card has specifications that match the pad arrangement of each product, it is not compatible with other products. On the other hand, in an LSI having a built-in self-evaluation circuit, a self-evaluation circuit, which is unnecessary for use as a product, is built in, and thus there is a disadvantage that the chip area increases.

【0005】本発明は、このような従来技術の欠点を改
善するべく案出されたものであり、その主な目的は、L
SIの評価時にプローブの移動を少なくして評価時間を
短縮できるように構成された半導体ウエハを提供するこ
とにある。
The present invention has been devised in order to remedy such drawbacks of the prior art, and its main purpose is to
It is an object of the present invention to provide a semiconductor wafer configured so that the movement of the probe can be reduced during the evaluation of SI to shorten the evaluation time.

【0006】[0006]

【課題を解決するための手段】このような目的は、本発
明によれば、集積回路が形成された複数のチップが形成
される半導体ウエハであって、前記複数のチップは、複
数のグループに分割され、かつグループ毎に評価用回路
部が形成されており、前記評価用回路部は、プローブ接
触用のパッドと、前記各グループ内の各チップの入出力
用パッドに接続されると共に、前記プローブ接触用パッ
ドから入力されるチップ選択信号をデコードして前記プ
ローブ接触用パッドを選択されたチップに接続するデコ
ード手段とを備えることを特徴とする半導体ウエハを提
供することにより達成される。
According to the present invention, there is provided a semiconductor wafer having a plurality of chips on which integrated circuits are formed, the plurality of chips being divided into a plurality of groups. The circuit portion for evaluation is divided and formed for each group, and the circuit portion for evaluation is connected to a pad for probe contact and an input / output pad of each chip in each group, and And a decoding means for decoding a chip selection signal input from the probe contact pad to connect the probe contact pad to the selected chip.

【0007】[0007]

【作用】本発明に基づく手段に於ては、各チップのパッ
ドにプローブを接触させて1チップずつ評価を行う代わ
りに、評価用回路部のパッドにプローブを接触させて評
価を行うので、ウエハの移動回数が、従来の(評価用回
路部数)/(被評価チップ数)で済み、評価時間の短縮
が図れる。この方法を用いると、製品チップのパッドに
プローブを接触させることはないので、パッド周辺のデ
ザインルールをプローブの影響を受けないものにするこ
とができる。更に、この評価用回路部のパッド数・パッ
ド配置を規格化することにより、一種類のプローブカー
ドを複数の製品について共用できるようになるので、プ
ローブカード作成費を低減できる。また、自己評価用回
路を評価用回路部に搭載することにより、自己評価用回
路の必要なLSIのチップ面積を小さくすることができ
る。加えて、1つの評価用回路部に対して多数の製品チ
ップを配置することにより、一枚のウエハに形成できる
製品チップ数を従来より増やすことが可能になる。
In the means according to the present invention, the evaluation is carried out by bringing the probe into contact with the pad of the evaluation circuit section instead of bringing the probe into contact with the pad of each chip and performing evaluation one by one. The number of movements of (1) is (conventional number of evaluation circuit parts) / (number of chips to be evaluated), and the evaluation time can be shortened. When this method is used, the probe is not brought into contact with the pad of the product chip, so that the design rule around the pad can be made unaffected by the probe. Furthermore, by standardizing the number of pads and the layout of pads in this evaluation circuit unit, one type of probe card can be shared by a plurality of products, so that the probe card production cost can be reduced. Further, by mounting the self-evaluation circuit in the evaluation circuit section, the chip area of the LSI that requires the self-evaluation circuit can be reduced. In addition, by arranging a large number of product chips for one evaluation circuit section, it becomes possible to increase the number of product chips that can be formed on one wafer as compared with the conventional case.

【0008】[0008]

【実施例】以下、本発明の好適実施例を添付の図面につ
いて詳しく説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

【0009】図1は、本発明の一実施例を説明するため
のウエハ上のチップ配置の模式図である。本ウエハに
は、後の工程で切断されて製品になる複数の製品チップ
(被評価チップ)部2と、製品チップ部2の評価に用い
る評価用回路部1とが設けられている。
FIG. 1 is a schematic view of a chip layout on a wafer for explaining one embodiment of the present invention. This wafer is provided with a plurality of product chip (chips to be evaluated) portions 2 to be cut into products in later steps, and an evaluation circuit portion 1 used for evaluation of the product chip portions 2.

【0010】評価用回路部1には、製品チップ部2の測
定に必要な信号・電源用パッド3と、該信号・電源用パ
ッド3と電気的に接続されて信号・電源を送る製品チッ
プ部2を選択するためのデコーダ回路4と、該デコーダ
回路4と電気的に接続されて被評価チップ部2の選択に
必要なチップアドレス(00、01、10、11)信号
を発するチップアドレス信号用パッド5とが、製品チッ
プ部2と同様に既知のプロセス技術により形成されてい
る。
The evaluation circuit section 1 includes a signal / power supply pad 3 necessary for measurement of the product chip section 2 and a product chip section that is electrically connected to the signal / power supply pad 3 and sends a signal / power supply. A decoder circuit 4 for selecting 2 and a chip address signal which is electrically connected to the decoder circuit 4 and issues a chip address (00, 01, 10, 11) signal necessary for selecting the evaluated chip portion 2 The pad 5 and the product chip portion 2 are formed by a known process technique.

【0011】製品チップ部2は、評価用回路部1の上下
に2チップずつ形成されている。そしてスクライブライ
ン6上にAL配線7、8を形成し、製品チップ部2の信
号・電源パッド9と評価用回路部1のデコーダ回路4と
の電気的接続を行う。このとき、AL配線7、8の長さ
は、どの製品チップ部2に対しても等しくなるようにし
ておく。
Two product chips 2 are formed on the upper and lower sides of the evaluation circuit unit 1. Then, the AL wirings 7 and 8 are formed on the scribe line 6 to electrically connect the signal / power supply pad 9 of the product chip section 2 and the decoder circuit 4 of the evaluation circuit section 1. At this time, the lengths of the AL wirings 7 and 8 are set to be the same for any product chip portion 2.

【0012】上述のような、評価用回路部1が1個と製
品チップ部2が4個との組み合わせを最小単位グループ
として、図2のようにウエハ12上にチップを配置す
る。なお、各グループ内の製品チップ部2は、図1に0
0、01、10、11で示すように、アドレス付けされ
ている。
Chips are arranged on the wafer 12 as shown in FIG. 2 with the combination of one evaluation circuit unit 1 and four product chip units 2 as described above as a minimum unit group. The product chip unit 2 in each group is 0 in FIG.
It is addressed as indicated by 0, 01, 10, 11.

【0013】本実施例では、評価用回路部1のパッドに
プローブ(図示せず)を接触させ、評価に必要な信号・
電源と同時に被評価チップ選択のためのチップアドレス
信号(00、01、10、11)を順次送ることによ
り、一回のプローブの接触で4チップの測定を行うこと
ができる。また製品チップ部2内のパッド9にはプロー
ブを接触させないので、パッド周辺のデザインルールは
プローブによる制約を受けない。
In the present embodiment, a probe (not shown) is brought into contact with the pad of the evaluation circuit section 1 so that signals necessary for evaluation
By sequentially sending the chip address signals (00, 01, 10, 11) for selecting the chips to be evaluated simultaneously with the power supply, four chips can be measured with one contact of the probe. Moreover, since the probe is not brought into contact with the pad 9 in the product chip portion 2, the design rule around the pad is not restricted by the probe.

【0014】図3は、本発明に於て評価用回路部1のパ
ッドの数並びに配置を規格化した場合の実施例を説明す
るための模式図である。上記第1の実施例と同様にして
各チップを形成するが、ここでは、必要数より多くのパ
ッド3、5、10を評価用回路部1上に形成する。但
し、使用しないパッド10は、デコーダ回路4と電気的
接続を行わない。そしてプローブカードは、これらのパ
ッド3、5、10の数並びに配置に合わせて作成する。
例えば互いに異なるLSIを作成する場合も、その評価
用回路部1のパッドの数並びに配置を共通化することに
より、共通のプローブカードを流用することが可能とな
る。
FIG. 3 is a schematic diagram for explaining an embodiment in which the number and arrangement of pads of the evaluation circuit portion 1 are standardized in the present invention. Each chip is formed in the same manner as in the first embodiment, but here, more pads 3, 5, 10 than necessary are formed on the evaluation circuit section 1. However, the unused pad 10 is not electrically connected to the decoder circuit 4. The probe card is created according to the number and arrangement of these pads 3, 5, 10.
For example, even when different LSIs are created, a common probe card can be used by making the number and arrangement of pads of the evaluation circuit unit 1 common.

【0015】図4は、評価用回路部1に自己評価回路1
1を搭載した場合の実施例を説明するための模式図であ
る。上記第1の実施例と同様にして各チップを形成する
が、ここでは、評価用回路部1上に自己評価回路11を
形成する。本実施例に於ては、自己評価回路11が製品
チップ部2の外部に配置されるので、製品チップ部2の
面積が増大せずに済む。
FIG. 4 shows the self-evaluation circuit 1 in the evaluation circuit section 1.
FIG. 3 is a schematic diagram for explaining an example in which 1 is mounted. Each chip is formed in the same manner as in the first embodiment, but here, the self-evaluation circuit 11 is formed on the evaluation circuit unit 1. In this embodiment, since the self-evaluation circuit 11 is arranged outside the product chip section 2, the area of the product chip section 2 does not increase.

【0016】[0016]

【発明の効果】以上説明したように本発明によれば、パ
ッドに対して1回のプローブの接触で複数の製品チップ
(被評価チップ)を評価し得るので、ウエハの移動回数
が減少し、評価時間の短縮化が実現し得る。
As described above, according to the present invention, since a plurality of product chips (chips to be evaluated) can be evaluated by one probe contact with the pad, the number of wafer movements is reduced, The evaluation time can be shortened.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を説明するためのチップ配置
の模式図。
FIG. 1 is a schematic view of a chip arrangement for explaining an embodiment of the present invention.

【図2】本発明の一実施例を説明するためのウエハの平
面図。
FIG. 2 is a plan view of a wafer for explaining an embodiment of the present invention.

【図3】本発明に於て評価用回路部のパッドの数並びに
配置を規格化した場合の実施例を説明するための模式
図。
FIG. 3 is a schematic diagram for explaining an embodiment in which the number and arrangement of pads in the evaluation circuit section are standardized in the present invention.

【図4】本発明に於て評価用回路部に自己評価回路を搭
載した場合の実施例を説明するための模式図。
FIG. 4 is a schematic diagram for explaining an embodiment in which a self-evaluation circuit is mounted on an evaluation circuit unit according to the present invention.

【図5】従来例を説明するためのウエハの平面図。FIG. 5 is a plan view of a wafer for explaining a conventional example.

【符号の説明】[Explanation of symbols]

1 評価用回路部 2 製品チップ部 3 信号・電源用パッド 4 デコーダ回路 5 チップアドレス信号用パッド 6 スクライブライン 7、8 AL配線 9 信号・電源パッド 10 予備パッド 11 自己評価回路 12 ウエハ 1 Evaluation Circuit Section 2 Product Chip Section 3 Signal / Power Pad 4 Decoder Circuit 5 Chip Address Signal Pad 6 Scribe Line 7 and 8 AL Wiring 9 Signal / Power Pad 10 Spare Pad 11 Self-Evaluation Circuit 12 Wafer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/822 H01L 27/04 T ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/822 H01L 27/04 T

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 集積回路が形成された複数のチップが形
成される半導体ウエハであって、 前記複数のチップは、複数のグループに分割され、かつ
グループ毎に評価用回路部が形成されており、 前記評価用回路部は、プローブ接触用のパッドと、前記
各グループ内の各チップの入出力用パッドに接続される
と共に、前記プローブ接触用パッドから入力されるチッ
プ選択信号をデコードして前記プローブ接触用パッドを
選択されたチップに接続するデコード手段とを備えるこ
とを特徴とする半導体ウエハ。
1. A semiconductor wafer having a plurality of chips on which integrated circuits are formed, wherein the plurality of chips are divided into a plurality of groups, and an evaluation circuit unit is formed for each group. The evaluation circuit unit is connected to a probe contact pad and an input / output pad of each chip in each group, and decodes a chip selection signal input from the probe contact pad to decode the chip selection signal. A semiconductor wafer, comprising: a decoding means for connecting a probe contact pad to a selected chip.
JP6221173A 1994-08-22 1994-08-22 Semiconductor wafer Withdrawn JPH0864648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6221173A JPH0864648A (en) 1994-08-22 1994-08-22 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6221173A JPH0864648A (en) 1994-08-22 1994-08-22 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH0864648A true JPH0864648A (en) 1996-03-08

Family

ID=16762625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6221173A Withdrawn JPH0864648A (en) 1994-08-22 1994-08-22 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH0864648A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339228A (en) * 2005-05-31 2006-12-14 Sharp Corp Wafer of large-scale integrated circuit and method of manufacturing same
JP2008283073A (en) * 2007-05-11 2008-11-20 Hitachi Ltd Semiconductor device and manufacturing method thereof
JP2009043409A (en) * 2008-10-24 2009-02-26 Elpida Memory Inc Test method and manufacturing method of semiconductor memory device, and semiconductor wafer
JP5451747B2 (en) * 2009-03-24 2014-03-26 日本電気株式会社 Manufacturing method of semiconductor wafer and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339228A (en) * 2005-05-31 2006-12-14 Sharp Corp Wafer of large-scale integrated circuit and method of manufacturing same
JP2008283073A (en) * 2007-05-11 2008-11-20 Hitachi Ltd Semiconductor device and manufacturing method thereof
EP2031655A2 (en) 2007-05-11 2009-03-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
US8106395B2 (en) 2007-05-11 2012-01-31 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JP2009043409A (en) * 2008-10-24 2009-02-26 Elpida Memory Inc Test method and manufacturing method of semiconductor memory device, and semiconductor wafer
JP5451747B2 (en) * 2009-03-24 2014-03-26 日本電気株式会社 Manufacturing method of semiconductor wafer and semiconductor device

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