JPH086260A - Method for developing resist and device therefor - Google Patents
Method for developing resist and device thereforInfo
- Publication number
- JPH086260A JPH086260A JP16307494A JP16307494A JPH086260A JP H086260 A JPH086260 A JP H086260A JP 16307494 A JP16307494 A JP 16307494A JP 16307494 A JP16307494 A JP 16307494A JP H086260 A JPH086260 A JP H086260A
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- Japan
- Prior art keywords
- pure water
- substrate
- developing
- resist
- processed
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板、カラーフ
ィルタ等のレジスト現像方法及びその装置に関し、特に
半導体製造やカラーフィルタ製造等に用いられるレジス
ト現像方法及びその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for developing a resist such as a semiconductor substrate and a color filter, and more particularly to a method and apparatus for developing a resist used for manufacturing semiconductors, color filters and the like.
【0002】[0002]
【従来の技術】従来、半導体等の製造のフォトリソグラ
フィにおける現像において、現像液滴下時に半導体ウエ
ハ表面に付着する微少泡による現像残り欠陥の発生を防
ぐ技術として、特開平4−260043号、及び特開平
3−266418号が提案されている。これら従来技術
について図4、図5で説明する。2. Description of the Related Art Conventionally, in the development in photolithography for manufacturing semiconductors and the like, Japanese Patent Application Laid-Open No. 4-260043 and JP-A-4-260043 have been proposed as a technique for preventing development residual defects due to minute bubbles adhering to the surface of a semiconductor wafer when developing droplets are dropped. Kaihei 3-266418 has been proposed. These conventional techniques will be described with reference to FIGS.
【0003】図4に示すレジストパターンの形成は、被
処理基板(1)上のレジスト膜(2)の表面に予め、ポ
リビニルアルコール等の現像液に対して可溶性の可溶膜
(3)を回転塗布したものに、現像液滴下ノズル(4)
より現像液(5)を滴下し、現像液盛り(6)を形成し
て現像処理を行うという方法である。図4中の回転チャ
ック(7)は被処理基板(1)を吸着保持し、回転を与
えるものである。To form the resist pattern shown in FIG. 4, a soluble film (3) which is soluble in a developing solution such as polyvinyl alcohol is previously rotated on the surface of the resist film (2) on the substrate (1) to be processed. Nozzle (4) under the developing liquid drop
In this method, the developing solution (5) is dropped to form a developing solution heap (6) and the developing treatment is performed. The rotary chuck (7) in FIG. 4 holds the substrate (1) to be processed by suction and rotates it.
【0004】この従来技術はレジスト膜(2)の表面に
可溶膜(3)を予め塗布しておくことに特徴があるもの
で、これは被処理基板(1)に現像液(5)を供給した
時に、気泡がレジスト膜(2)に直接付着するのを防ぐ
ことにある。また、可溶膜(3)上に気泡が付着して
も、可溶膜(3)を溶しながら現像液(5)が浸透し、
現像が進むので気泡が浮きあがり、現像時の気泡による
未現像部分、即ち現像欠陥が生じることを防ぐことがで
きるというものである。This prior art is characterized in that a soluble film (3) is applied to the surface of the resist film (2) in advance, which is a method in which a developing solution (5) is applied to a substrate (1) to be processed. This is to prevent air bubbles from directly adhering to the resist film (2) when supplied. Further, even if bubbles adhere to the soluble film (3), the developing solution (5) permeates while melting the soluble film (3),
As the development progresses, the bubbles rise up, and it is possible to prevent the undeveloped portion, that is, the development defect due to the bubbles during the development from occurring.
【0005】次に、もう一つの従来技術について、図5
により説明する。これは、被処理基板(1)上のレジス
ト膜(2)を現像する前に、現像後の被処理基板の洗浄
に用いるリンスノズル(8)より純水(9)等を吐出
し、被処理基板(1)の被現像面であるレジスト膜
(2)を純水(9)で均一に被ってプリウェットし、次
に被処理基板(1)を回転させて、純水(9)がレジス
ト膜(2)を湿潤している程度に回転振り切りした後
に、現像液滴下ノズル(4)より現像液を滴下し、現像
液液盛りを形成して現像処理を行うという方法である。Next, another conventional technique will be described with reference to FIG.
Will be described. This is because before the resist film (2) on the substrate (1) to be processed is developed, pure water (9) or the like is discharged from a rinse nozzle (8) used for cleaning the substrate to be processed after development, to be processed. The resist film (2) which is the surface to be developed of the substrate (1) is uniformly covered with pure water (9) to be pre-wet, and then the substrate (1) to be processed is rotated so that the pure water (9) becomes a resist. This is a method in which the film (2) is shaken off to such an extent that the film is wet, and then a developing solution is dropped from a nozzle (4) below the developing solution droplets to form a developing solution puddle and a developing process is performed.
【0006】図5の従来技術における純水等によるプリ
ウェットは、上記図4の従来技術と同じく、現像液の供
給時にレジスト膜(2)に気泡が付着するのを防ぐとい
うものである。そしてこの方式では、被処理基板(2)
は予め現像処理前に純水等でプルウェットされるので、
一般に疎水性の傾向が強いレジスト膜(2)をある程度
親水性とすることができ、現像液(5)とレジスト膜
(2)のなじみが良くなるのでレジスト膜(2)上に気
泡が付着しにくくなるというものである。Pre-wetting with pure water or the like in the prior art of FIG. 5 is to prevent bubbles from adhering to the resist film (2) during the supply of the developing solution, as in the prior art of FIG. In this method, the substrate to be processed (2)
Is pre-wet with pure water before development processing,
Generally, the resist film (2), which has a strong tendency to be hydrophobic, can be made hydrophilic to some extent, and the developing solution (5) and the resist film (2) are well compatible with each other, so that air bubbles adhere to the resist film (2). It becomes difficult.
【0007】この現像方法は一般に半導体製造等のTM
AH等のアルカリ水溶液の現像液を用いた現像工程で実
施されているものであるが、特開平3−266418
「レジスト現像方法」の如く電子ビームレジスト等の有
機溶剤を用いた現像方式でプリウェット液を低現像溶剤
として使用する限定した条件でのものである。This developing method is generally used for TM in semiconductor manufacturing and the like.
Although it is carried out in a developing process using a developing solution of an alkaline aqueous solution such as AH, the method is disclosed in JP-A-3-266418.
In the developing method using an organic solvent such as an electron beam resist as in the "resist developing method", the pre-wetting liquid is used as a low developing solvent under limited conditions.
【0008】また、上述の従来技術のプリウェットの手
法では、気泡による現像欠陥は減少する傾向にあるもの
の充分な効果をあげることができないものである。具体
例をあげると6インチ半導体基板におけるアルカリ現像
液、TMAHを用いた現像処理において、プリウェット
手法を用いなかった時の欠陥は基板あたり2〜3個、プ
リウェット処方を用いた時は基板あたり1〜2個程度発
生しているものである。Further, the above-mentioned prior-art pre-wetting method tends to reduce development defects due to air bubbles, but cannot sufficiently bring about the effect. As a specific example, in the development process using an alkaline developer and TMAH on a 6-inch semiconductor substrate, the number of defects when the pre-wetting method is not used is 2-3 per substrate, and when the pre-wet formulation is used, the number of defects is per substrate. About 1 to 2 are generated.
【0009】[0009]
【発明が解決しようとする課題】前述の従来技術の課題
は、まず図4に示す従来技術においては、被処理基板へ
のレジスト塗布とレジストの露光処理の後、即ち現像処
理直前に被処理基板上にポリビニルアルコール等の現像
液に可溶な膜を回転塗布により形成しなければならない
ので、回転塗布の為の塗布カップや薬液配管が必要とな
るものである。In the prior art shown in FIG. 4, the above-mentioned problems of the prior art are as follows. First, after the resist is applied to the substrate to be processed and the resist is exposed, that is, immediately before the developing process, the substrate is processed. Since a film soluble in a developing solution such as polyvinyl alcohol must be formed on the upper surface by spin coating, a coating cup and a chemical solution pipe for spin coating are required.
【0010】例えば、これを実際の半導体等の製造ライ
ン等で実現するためには、以上をふまえて次の三つの例
が考えられる。つまり、第1の例は、可溶性膜塗布装置
を新たに単体で設置する。第2の例は、現像装置に可溶
膜塗布ユニットを付加する。第3の例は現像装置の現像
カップに可溶性溶液の吐出ノズルを付加し、現像カップ
も可溶膜塗布が可能なような形状に変更する。For example, in order to realize this in an actual production line of semiconductors or the like, the following three examples can be considered based on the above. That is, in the first example, the soluble film coating device is newly installed as a single unit. In the second example, a soluble film coating unit is added to the developing device. In the third example, a soluble solution discharge nozzle is added to the developing cup of the developing device, and the developing cup is also changed to a shape capable of applying a soluble film.
【0011】上記の例に共通していえることは、運用上
可溶性溶液の薬液自体の管理、塗布後の被処理基板のパ
ーティクル管理、塗布膜均一性の管理、薬液の交換作
業、塗布カップの交換と洗浄作業等の管理項目や作業が
新たに増えるという点である。また、比較的大規模な設
備の改新も必要となるという点である。従って、作業ロ
ーディングに新たな負荷がかかるという点と、設備の改
新を行う為に比較的多くの費用がかかるという点が課題
となる。In common with the above-mentioned examples, in operation, management of the chemical solution itself of the soluble solution, particle management of the substrate to be processed after coating, uniformity of coating film, chemical solution replacement work, coating cup replacement The point is that the number of management items and work such as cleaning work will increase. In addition, it is also necessary to upgrade relatively large-scale facilities. Therefore, there are problems that a new load is applied to the work loading and that a relatively large amount of cost is required to renew the equipment.
【0012】次に、図5に示す従来技術における課題で
あるが、この従来技術では被処理基板のレジスト膜表面
を予め純水等でプリウェットし、親水性として、現像液
滴下時にレジスト膜表面に気泡が付着しにくくなるとい
う方法をとっているが、この方法を用いても、実際の半
導体製造における現像処理では、気泡による現像欠陥は
若干減少するものの、半導体基板1枚に対して1個程度
の欠陥が発生することが実験の結果分っている。従って
この図5の従来技術を用いても気泡による現像欠陥を完
全になくすことができないという課題がある。Next, regarding the problem in the conventional technique shown in FIG. 5, in this conventional technique, the resist film surface of the substrate to be treated is pre-wet with pure water or the like in advance to make it hydrophilic so that the resist film surface is kept under the development droplet. However, even if this method is used, in the actual development process of semiconductor manufacturing, the development defects due to the bubbles are slightly reduced, but one defect is generated for each semiconductor substrate. Experimental results show that some defects occur. Therefore, there is a problem that development defects due to bubbles cannot be completely eliminated even by using the conventional technique of FIG.
【0013】[0013]
【課題を解決するための手段】本発明は、半導体基板、
カラーフィルタ等のレジスト現像方法において、被処理
基板上の露光処理されたレジスト膜を現像する前に、前
記被処理基板上に脱気処理された脱気純水を滴下し、脱
気純水液盛りを形成することを特徴とするレジスト現像
方法であり、また、形成された脱気純水液盛り上に、現
像液を滴下しながら被処理基板を回転させて、脱気純水
液盛りを現像液に置換して現像処理を行うことを特徴と
するレジスト現像方法である。また、被処理基板を吸着
し、回転させる回転チャックと、純水を真空脱気して脱
気純水を生成する真空脱気機構と、被処理基板のレジス
ト膜上に脱気純水を滴下し液盛りを形盛する脱気純水滴
下ノズルと、脱気純水液盛りを現像液に置換する現像液
滴下ノズルとを有していることを特徴とするレジスト現
像装置である。The present invention provides a semiconductor substrate,
In a method of developing a resist such as a color filter, before developing an exposed resist film on a substrate to be processed, degassed degassed pure water is dropped onto the substrate to be processed to obtain a degassed pure water solution. It is a resist developing method characterized by forming a heap, and the substrate to be processed is rotated while dropping the developing solution on the formed degassed pure water solution heap to form a degassed pure water solution heap. The resist developing method is characterized in that development processing is performed by substituting with a developing solution. In addition, a rotary chuck for adsorbing and rotating the substrate to be processed, a vacuum degassing mechanism for degassing pure water by vacuum to generate degassed pure water, and dropping degassed pure water on the resist film of the substrate to be processed. A resist developing apparatus, comprising: a degassed pure water dropping nozzle for forming a liquid pool and a developing liquid drop nozzle for replacing the degassed pure water liquid pool with a developing solution.
【0014】[0014]
【作用】本発明において、レジスト膜を現像する前に、
被処理基板上に脱気純水液盛りを形成し、レジスト膜上
に付着した気泡を脱気純水に吸収させた後、空気に触れ
ることなく脱気純水を現像液に置換するものであり、レ
ジスト膜上の未現像部分や、現像欠陥の発生をなくすと
いう作用を有するものである。水には、かなり大気中の
酸素が溶解しているが、半導体基板やカラーフィルタ等
に用いられる純水には、自然酸化膜が形成されやすく、
不具合が生じやすくなるため、溶解酸素を除去してい
る。その方法は、純水中に窒素ガスを吹き込み、バブリ
ングさせて溶解酸素を追い出す、というものである。こ
のため、通常、純水中には窒素が溶解しており、これ以
上の気体を純水中に取り込むことができない。そこで、
これを真空中で脱気することにより、純水が新たに気体
を溶解できるようにして、レジスト膜上に付着した気泡
を吸収させる、という作用を有するものである。In the present invention, before developing the resist film,
A degassed deionized water solution is formed on the substrate to be processed, the bubbles adhering to the resist film are absorbed by the degassed deionized water, and the degassed deionized water is replaced with a developer without touching the air. It has an effect of eliminating the undeveloped portion on the resist film and the occurrence of development defects. Although oxygen in the atmosphere is considerably dissolved in water, a natural oxide film is easily formed in pure water used for semiconductor substrates, color filters, etc.
Dissolved oxygen is removed because problems tend to occur. The method is to blow nitrogen gas into pure water and bubble it to expel dissolved oxygen. For this reason, nitrogen is usually dissolved in pure water, and no more gas can be taken into pure water. Therefore,
By degassing this in a vacuum, pure water can newly dissolve the gas and has the effect of absorbing the bubbles adhering to the resist film.
【0015】[0015]
【実施例】次に本発明の実施例について図面を参照して
説明する。 [実施例1]図1は第一実施例を示す図である。この実
施例のレジスト現像方法は、まず回転チャック(7)に
吸着保持された被処理基板(1)上に純水脱気方法の一
例として真空配管(10)と、純水供給配管(11)を
備えた真空脱気器(12)により、600mmHg程度の
真空度で5分間以上真空に晒して真空脱気された脱気純
水を脱気純水滴下ノズル(13)より滴下し、脱気純水
液盛り(14)を形成する。Next, an embodiment of the present invention will be described with reference to the drawings. [Embodiment 1] FIG. 1 shows a first embodiment. In the resist developing method of this embodiment, first, a vacuum pipe (10) and a pure water supply pipe (11) are provided as an example of a pure water degassing method on a substrate (1) to be processed that is suction-held on a rotary chuck (7). Using a vacuum deaerator (12) equipped with, the deaerated pure water that has been vacuum deaerated by being exposed to a vacuum at a degree of vacuum of about 600 mmHg for 5 minutes or more is dropped from the deaerated pure water dropping nozzle (13) and deaerated. A pure water puddle (14) is formed.
【0016】この時、脱気純水を滴下しながら被処理基
板(1)を2000r.p.m.程度で高速回転し、徐々に回
転速度を減速して脱気純水液盛り(14)を形成する。
その理由は、被処理基板(1)を静止させて脱気純水を
滴下すると空気の巻き込みによりレジスト膜(2)上に
気泡が付着し易くなるためである。つまり、被処理基板
(1)を高速回転しながら脱気純水を滴下すると遠心力
により、付着した気泡は脱気純水とともに基板外部へ飛
散するため、レジスト膜(2)上に留まる気泡の数は非
常に少なくなる。At this time, the substrate (1) to be processed is rotated at a high speed of about 2000 rpm while dripping deaerated pure water, and the rotational speed is gradually reduced to form a degassed pure water puddle (14). .
The reason is that when the substrate (1) to be processed is kept stationary and degassed pure water is dropped, air bubbles easily adhere to the resist film (2) due to the entrainment of air. That is, when degassed pure water is dropped while the substrate (1) to be processed is rotated at high speed, the adhered bubbles are scattered with the degassed pure water to the outside of the substrate due to the centrifugal force, so that the bubbles remaining on the resist film (2) are removed. The number will be very small.
【0017】一般に、現像液をレジスト膜上に直接滴下
した場合のレジスト膜に付着する気泡の大きさは、現像
欠陥である現像残り部の大きさから約10μm〜100
μm程度と推定されている。純水の場合も気泡の大きさ
はほぼ同様と考えられる。ここで、上述の脱気純水中で
レジスト膜(2)上に留まった気泡は、基体吸収性に富
んだ脱気純水の基体吸引作用により、100μm程度の
泡であれば約2分程度で消滅することが下記の実験の結
果明らかになった。Generally, the size of the bubbles adhering to the resist film when the developing solution is dropped directly onto the resist film is about 10 μm to 100 depending on the size of the undeveloped portion which is a development defect.
It is estimated to be about μm. In the case of pure water, the size of bubbles is considered to be almost the same. Here, the bubbles remaining on the resist film (2) in the degassed pure water are about 2 minutes if they are bubbles of about 100 μm due to the substrate suction action of the degassed pure water having a high substrate absorbability. It became clear as a result of the following experiment that it disappears.
【0018】図3はその実験装置を示した図である。透
明テフロン管(15)の中には約10ccの純水(16)
が封入されており、継手(17)と吸引配管(18)を
介して空気コンバム式の真空発生器(19)に接続され
ている。継手(17)には透明テフロン管(15)内の
到達真空度を計測する為の真空計(20)が接続されて
いる。FIG. 3 is a diagram showing the experimental apparatus. About 10cc of pure water (16) in the transparent Teflon tube (15)
Is enclosed and is connected to an air-conbum type vacuum generator (19) through a joint (17) and a suction pipe (18). A vacuum gauge (20) for measuring the ultimate vacuum in the transparent Teflon tube (15) is connected to the joint (17).
【0019】実験は次のような方法で行った。まず図3
の状態で真空発生器(19)を作動させると透明テフロ
ン管(15)内の純水(16)は脱気作用を受け、脱泡
による気泡(21)を発生する。この時真空計(20)
の表示は620mmHgであり、その状態で10分間放置
した。次に脱気が終った状態で透明テフロン管(15)
に少し衝撃を与えて、テフロン管内面に付着した脱泡に
よる気泡(21)を取り除いてやり、透明テフロン管
(15)を分割部(22)にて分割する。The experiment was conducted by the following method. First, Fig. 3
When the vacuum generator (19) is operated in this state, the pure water (16) in the transparent Teflon tube (15) is degassed and bubbles (21) are generated by degassing. Vacuum gauge (20) at this time
Was 620 mmHg, and it was left for 10 minutes in that state. Next, with the deaeration completed, a transparent Teflon tube (15)
A small impact is applied to the inner surface of the Teflon tube to remove the bubbles (21) caused by defoaming, and the transparent Teflon tube (15) is divided by the dividing section (22).
【0020】このテフロン管(15)内の脱気純水をサ
ンプルとして次のような方法で気泡の吸収時間を測っ
た。気泡は図示しない注射器と注射針で脱気純水の水面
に空気を吹き込んで、透明テフロン管(15)内壁に付
着させることで目視観察可能な状態とする。観察する気
泡は、実際の現像処理にてレジスト膜に付着する気泡の
状態に近い、空気層(23)に接する脱気純水水面か
ら、深さ1mm〜3mm以内に付着している気泡で、大きさ
は目測で100μm程度のものを選んだ。Using the degassed pure water in the Teflon tube (15) as a sample, the absorption time of bubbles was measured by the following method. The bubbles are made visible by blowing air into the surface of degassed pure water with a syringe and a needle (not shown) and attaching them to the inner wall of the transparent Teflon tube (15). The bubbles to be observed are bubbles adhering within a depth of 1 mm to 3 mm from the surface of degassed pure water in contact with the air layer (23), which is close to the state of bubbles adhering to the resist film in the actual development process. The size selected was about 100 μm by visual inspection.
【0021】上記の方法で透明テフロン管(15)内壁
の気泡の消滅時間を10回測ったところ、平均時間は約
120秒であった。脱気時間に関しては実験に先立っ
て、5分間以上の脱気を行えばこの実験と同様な結果が
得られることを確認した。以上の実験結果より、大きさ
100μm以内の気泡は脱気純水中で約2分以内に消滅
するという事実が分った。When the disappearance time of bubbles on the inner wall of the transparent Teflon tube (15) was measured 10 times by the above method, the average time was about 120 seconds. Regarding the deaeration time, it was confirmed that the same results as in this experiment could be obtained by performing deaeration for 5 minutes or more prior to the experiment. From the above experimental results, it was found that the bubbles with a size of 100 μm or less disappeared in degassed pure water within about 2 minutes.
【0022】従って、上述の被処理基板(1)上の脱気
純水液盛り(12)中でレジスト膜(2)上に留まる気
泡は約2分以内に脱気純水に吸収され消滅することが類
推される。この場合、脱気純水液盛り(12)を乗せた
被処理基板(1)を低速回転させたり停止させたりする
ような動作を繰り返すと、脱気純水の移動が起こるので
気泡が脱気純水に吸収され易くなり、気泡の消滅時間は
2分間よりさらに短かくなるものと推定される。Therefore, the bubbles remaining on the resist film (2) in the degassed pure water solution pool (12) on the substrate (1) to be processed are absorbed by the degassed pure water within about 2 minutes and disappear. It can be analogized. In this case, when the substrate (1) on which the degassed pure water solution (12) is placed is rotated or stopped at a low speed, the degassed pure water moves, so that the bubbles are degassed. It is presumed that the water is easily absorbed by pure water, and the bubble disappearance time becomes shorter than 2 minutes.
【0023】ここで再び実施例1に戻る。被処理基板
(1)上に脱気純水液盛り(14)を形成し、2分間程
度放置してレジスト膜(2)上の気泡を消滅させた後
に、以下の現像処理に入る。脱気純水液盛り(14)上
に現像液滴下ノズル(13)より被処理基板(1)の中
心部に現像液を滴下しながら被処理基板(1)を回転さ
せる。Now, let us return to the first embodiment. The degassed pure water solution puddle (14) is formed on the substrate (1) to be processed and left for about 2 minutes to eliminate the bubbles on the resist film (2), and then the following developing process is started. The substrate (1) to be processed is rotated while dropping the developing solution onto the central portion of the substrate (1) to be processed from the nozzle (13) for developing liquid drops onto the degassed pure water solution pool (14).
【0024】この動作により、被処理基板(1)上の脱
気純水液盛り(14)は現像液に置換される。置換動作
においては、レジスト膜(2)面が大気に触れないよう
な回転速度で被処理基板(1)を回転させる。また、現
像液滴下ノズル(4)より滴下する現像液も比較的流量
を多くし、しかも流速を抑えて、滴下による気泡の混入
が起らないように滴下動作を行う。以上の動作により、
脱気純水液盛り(14)を現像液に置換し、被処理基板
(1)上に現像液液盛りを形成して、1分間程度放置し
現像を行う。その後、被処理基板(1)を回転させなが
らリンスノズル(8)より純水等を吐出し、洗浄を行っ
た後、被処理基板(1)の回転乾燥を行うことで全ての
現像処理を終了する。By this operation, the degassed pure water solution puddle (14) on the substrate (1) to be processed is replaced with the developing solution. In the replacement operation, the substrate (1) to be processed is rotated at a rotation speed such that the surface of the resist film (2) does not come into contact with the atmosphere. Further, the flow rate of the developing solution dropped from the developing liquid drop nozzle (4) is also relatively increased, the flow rate is suppressed, and the dropping operation is performed so that bubbles are not mixed by the dropping. By the above operation,
The degassed pure water solution pool (14) is replaced with a developing solution, the developing solution pool is formed on the substrate (1) to be processed, and the substrate is left for about 1 minute for development. Then, pure water or the like is discharged from the rinse nozzle (8) while rotating the substrate (1) to be processed, and after cleaning, the substrate (1) to be processed is rotationally dried to complete all development processing. To do.
【0025】以上より、この実施例においては、脱気純
水液盛り(14)の形成時にレジスト膜(2)に付着し
た気泡は脱気純水に吸収され、しかも現像液は脱気純水
液盛り(14)上に滴下し、置換するのでレジスト膜
(2)上に気泡は存在しなくなるものである。従って、
比較的大規模な設備の改新や、運用上の新たな管理等の
負担なくして、気泡によるレジスト膜の未現像、即ち現
像欠陥をなくすことができるものである。As described above, in this embodiment, the bubbles adhering to the resist film (2) during the formation of the degassed pure water solution pool (14) are absorbed by the degassed pure water, and the developer is degassed pure water. Bubbles are not present on the resist film (2) because the liquid is dropped onto the puddle (14) and replaced. Therefore,
Undeveloped resist film due to air bubbles, that is, development defects, can be eliminated without the burden of relatively large-scale facility renewal or new operational management.
【0026】[実施例2]図2は、第二実施例を示す図
である。第一実施例のレジスト現像方法では、現像液は
現像液滴下ノズル(4)から被処理基板(1)の中心部
に脱気純水液盛り(14)が現像液に置換される迄滴下
され続けるので、被処理基板(1)の中心部付近の現像
がそれ以外の部分より早く進み、例えば半導体基板のパ
ターンの場合には、中心部付近のパターン線幅がそれ以
外の部分よりも細くなるという傾向がある。以上のよう
な問題を改善するため、第二実施例においては、現像液
滴下ノズル(4)を複数化し、被処理基板(1)表面の
中心線上に並べた。[Second Embodiment] FIG. 2 is a diagram showing a second embodiment. In the resist developing method of the first embodiment, the developing solution is dripped from the developing liquid drop nozzle (4) to the center of the substrate (1) to be processed until the degassed pure water solution pile (14) is replaced with the developing solution. Since the process is continued, the development in the vicinity of the central portion of the substrate (1) to be processed proceeds faster than in the other portions. For example, in the case of a semiconductor substrate pattern, the pattern line width in the vicinity of the central portion becomes narrower than the other portions. Tends to. In order to improve the problems as described above, in the second embodiment, a plurality of developing liquid drop nozzles (4) are provided and arranged on the center line of the surface of the substrate (1) to be processed.
【0027】この実施例の動作及び現像処理は第一実施
例と全く同様である。但し、この実施例における現像液
滴下ノズル(4)からの現像液滴下動作は、全てのノズ
ルにおいて滴下タイミングは同一であるが、以下のよう
な工夫が必要である。つまり、被処理基板(1)の回転
動作により、各現像液滴下ノズル(4)の基板表面の単
位面積当りの現像液の流量に差が生ずるので、各現像滴
下ノズル(4)の現像液流量は、被処理基板(1)の中
心部のノズルがいちばん少なく、最外周部のノズルがい
ちばん多く、つまりノズルが外周部にゆくにつれ、段階
的に現像液流量を増やしてゆく必要がある。こうするこ
とにより、現像液は被処理基板1に均一に滴下されるの
で、より均一な現像パターンを得ることができるもので
ある。The operation and developing process of this embodiment are exactly the same as those of the first embodiment. However, the developing liquid drop operation from the developing liquid drop nozzle (4) in this embodiment has the same dropping timing in all the nozzles, but the following measures are required. That is, since the flow rate of the developing solution per unit area of the substrate surface of each developing liquid drop nozzle (4) varies due to the rotation operation of the substrate to be processed (1), the developing solution flow rate of each developing liquid drop nozzle (4). The number of nozzles in the central portion of the substrate (1) to be processed is the smallest, and the number of nozzles in the outermost peripheral portion is the largest, that is, it is necessary to gradually increase the flow rate of the developing solution as the nozzles move to the outer peripheral portion. By doing so, the developing solution is evenly dropped on the substrate 1 to be processed, so that a more uniform developing pattern can be obtained.
【0028】[0028]
【発明の効果】以上説明したように本発明によれば、レ
ジスト膜を現像する前に、被処理基板上に脱気純水液盛
りを形成し、レジスト膜上に付着した気泡を脱気純水に
吸収させた後、空気に触れることなく脱気純水を現像液
に置換するので、レジスト膜上に残留する気泡をなくす
ことができる。従って気泡の付着によって起こるレジス
ト膜上の未現像部分、即ち現像欠陥の発生がなくなると
いう効果を有するものである。また、本発明によれば、
比較的大規模な設備の改新や運用上の新たな管理等の負
担なくして現像欠陥をなくせるという利点を有するもの
である。As described above, according to the present invention, a degassed pure water solution puddle is formed on a substrate to be processed before the resist film is developed, and bubbles adhering to the resist film are purely degassed. After being absorbed in water, the degassed pure water is replaced with the developing solution without touching the air, so that bubbles remaining on the resist film can be eliminated. Therefore, it has an effect that an undeveloped portion on the resist film, that is, a development defect caused by adhesion of bubbles is eliminated. Further, according to the present invention,
This has the advantage that development defects can be eliminated without the burden of relatively large-scale facility renewal and new operational management.
【図1】 本発明の第一実施例のレジスト現像方法を示
す図。FIG. 1 is a diagram showing a resist developing method according to a first embodiment of the present invention.
【図2】 本発明の第二実施例のレジスト現像方法を示
す図。FIG. 2 is a diagram showing a resist developing method according to a second embodiment of the present invention.
【図3】 脱気純水の気泡吸収実験における実験装置を
示す図。FIG. 3 is a diagram showing an experimental apparatus in a bubble absorption experiment of degassed pure water.
【図4】 従来技術の第一の公知例におけるレジスト現
像方法を示す図。FIG. 4 is a diagram showing a resist developing method in a first known example of the related art.
【図5】 従来技術の第二の公知例におけるレジスト現
像方法を示す図。FIG. 5 is a diagram showing a resist developing method in a second known example of the related art.
1 被処理基板 2 レジスト膜 3 可溶膜 4 現像液滴下ノズル 5 現像液 6 現像液液盛り 7 回転チャック 8 リンスノズル 9 純水 10 真空配管 11 純水供給配管 12 真空脱気器 13 脱気純水滴下ノズル 14 脱気純水液盛り 15 透明テフロン管 16 純水 17 継手 18 吸引配管 19 真空発生器 20 真空計 21 脱泡による気泡 22 分割部 23 空気層 1 substrate to be processed 2 resist film 3 soluble film 4 developing liquid drop nozzle 5 developing solution 6 developing solution solution 7 rotating chuck 8 rinse nozzle 9 pure water 10 vacuum piping 11 pure water supply piping 12 vacuum deaerator 13 degassing pure Water dripping nozzle 14 Degassed pure water liquid fill 15 Transparent Teflon pipe 16 Pure water 17 Joint 18 Suction piping 19 Vacuum generator 20 Vacuum gauge 21 Bubbles due to defoaming 22 Dividing part 23 Air layer
Claims (3)
ト現像方法において、被処理基板上の露光処理されたレ
ジスト膜を現像する前に、前記被処理基板上に脱気処理
された脱気純水を滴下し、脱気純水液盛りを形成するこ
とを特徴とするレジスト現像方法。1. In a method of developing a resist for a semiconductor substrate, a color filter, etc., before developing an exposed resist film on a substrate to be processed, deaerated pure water deaerated on the substrate to be processed is treated. A method for developing a resist, which comprises dripping and forming a degassed pure water puddle.
を滴下しながら被処理基板を回転させて、脱気純水液盛
りを現像液に置換して現像処理を行うことを特徴とする
請求項1に記載のレジスト現像方法。2. The development treatment is performed by rotating the substrate to be processed while dropping a developing solution on the formed degassed pure water solution puddle and replacing the degassed pure water solution puddle with the developing solution. The resist developing method according to claim 1, wherein the resist developing method is used.
ャックと、純水を真空脱気して脱気純水を生成する真空
脱気機構と、被処理基板のレジスト膜上に脱気純水を滴
下し液盛りを形盛する脱気純水滴下ノズルと、脱気純水
液盛りを現像液に置換する現像液滴下ノズルとを有して
いることを特徴とするレジスト現像装置。3. A rotary chuck for adsorbing and rotating a substrate to be processed, a vacuum degassing mechanism for degassing pure water by vacuum to generate degassed pure water, and a degassing pure on the resist film of the substrate to be processed. A resist developing device comprising: a degassed pure water dropping nozzle for dropping water to form a liquid puddle, and a developing liquid drop lower nozzle for replacing the degassed pure water liquid puddle with a developing solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16307494A JPH086260A (en) | 1994-06-22 | 1994-06-22 | Method for developing resist and device therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16307494A JPH086260A (en) | 1994-06-22 | 1994-06-22 | Method for developing resist and device therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH086260A true JPH086260A (en) | 1996-01-12 |
Family
ID=15766693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16307494A Pending JPH086260A (en) | 1994-06-22 | 1994-06-22 | Method for developing resist and device therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH086260A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02270147A (en) * | 1989-04-10 | 1990-11-05 | Pioneer Electron Corp | Method and device for developing photoresist |
JPH031341A (en) * | 1989-05-29 | 1991-01-08 | Nec Corp | Developing device |
JPH03231227A (en) * | 1990-02-06 | 1991-10-15 | Canon Inc | Formation of electrode pattern |
-
1994
- 1994-06-22 JP JP16307494A patent/JPH086260A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02270147A (en) * | 1989-04-10 | 1990-11-05 | Pioneer Electron Corp | Method and device for developing photoresist |
JPH031341A (en) * | 1989-05-29 | 1991-01-08 | Nec Corp | Developing device |
JPH03231227A (en) * | 1990-02-06 | 1991-10-15 | Canon Inc | Formation of electrode pattern |
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