JP2007095960A - Method of cleaning substrate, method of manufacturing semiconductor device, display, substrate for device cleaning, and device for developing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a substrate capable of preventing the mist containing cleaning liquid that occurs from sticking to the substrate, when the cleaning liquid collides with and is rebounded from the substrate during cleaning of the substrate. <P>SOLUTION: A substrate 22 is rotated at a predetermined rotation speed. A cleaning liquid is supplied to the substrate 22 by a predetermined supply amount and then the cleaning liquid which is supplied to the substrate 22 rebounds from the substrate 22 to cause mist. The amount of mist present above the substrate 22 is detected in a substrate cleaning container 24. The rotation speed of the substrate 22 is controlled according to the detected amount of mist, to suppress the occurrence of mist, thereby preventing the mist containing cleaning liquid from sticking to the substrate 22. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate cleaning method, a semiconductor device manufacturing method, a display device, a substrate cleaning device, and a substrate development processing device.

  In recent years, with the spread of mobile phones, televisions, personal computers, etc., the demand for display devices such as liquid crystal display devices (LCD), plasma display devices (PDP), and organic electroluminescence (EL) display devices has increased rapidly. ing. In these display devices, a semiconductor device in which a conductive pattern made of a conductive film such as an oxide film or a metal film is formed is mounted as a drive circuit element in the image element portion.

  A conductive pattern of a semiconductor device includes a step of forming a conductive film on a semiconductor substrate, and a photosensitive material is applied to a surface of the semiconductor substrate on which the conductive film is formed, on the side where the conductive film is formed. A step of selectively exposing the photosensitive material film on the semiconductor substrate; a developer is applied to the semiconductor substrate on which the exposed photosensitive material film is formed; and a cleaning liquid is applied to the semiconductor substrate to which the developer is applied It is formed through a step of developing a resist pattern on the semiconductor substrate by supplying and cleaning the semiconductor substrate, a step of etching the conductive film using the developed resist pattern as a mask, and a step of removing the resist pattern The

  Among these steps, the step of developing the resist pattern (hereinafter referred to as the developing step) is a particularly important step that directly affects the line width of the conductive pattern to be formed. The development process is performed as follows, for example. First, a semiconductor substrate (hereinafter also referred to simply as a substrate) on which a positive photosensitive material film is formed is rotated to supply a developing solution to the rotating substrate, and the developing solution is applied to the entire processing surface of the substrate by centrifugal force. While spreading, the exposed portion of the photosensitive material film is dissolved in the developer. After the time determined according to the type of the developer and the photosensitive material film, the supply of the developer is stopped, and the developer remaining on the substrate and the photosensitive material film dissolved in the developer are washed with a cleaning solution such as water or pure water. Wash away. In this way, the unexposed portion of the photosensitive material film is left on the substrate, and the resist pattern is developed.

  In such a development process, a substrate is mounted on a vacuum suction table having a rotation function provided in a substrate development processing container, and a developer is discharged from a discharge nozzle onto the mounted substrate, so that the substrate on the vacuum suction table is mounted. It is mainly performed by a single-wafer type spin-type substrate development processing apparatus that supplies a cleaning liquid onto the substrate and rotates it after the rotation. In such a single wafer type substrate development processing apparatus, there is an advantage that uniform development processing can be performed within the surface to be processed by processing while rotating the substrate.

  However, in the conventional substrate development processing apparatus, when the developer is discharged onto the substrate, the developer is often scattered from the discharge nozzle, and the developer rebounds due to the impact force of the developer against the substrate. There is a problem that a developer mist that is a fine droplet of a large amount of developer is generated in the container. This developer mist scatters to the outside from the opening of the developing container that discharges gas when the solvent in the developer evaporates, and forms a photosensitive material film on the unprocessed substrate waiting outside the developing container. This may cause development failure of an unprocessed substrate such as adhesion to a portion that should not be removed and dissolution of the photosensitive material film in that portion.

  In view of this, a substrate development processing apparatus that prevents the developer mist from scattering from the development processing container to the outside has been proposed (for example, see Patent Document 1). FIG. 7 is a diagram schematically showing the configuration of the substrate development processing apparatus 1 disclosed in Patent Document 1. As shown in FIG. The substrate development processing apparatus 1 is a development processing container 3 that accommodates a substrate 2, and includes a development processing container 3 including two ceiling plates 4 and 5 having openings 4 a and 5 a at different positions, and the substrate 2. The rotating unit 6 is supported and rotated by vacuum suction, the developer discharge nozzle 7 applies a developer to the substrate 2, and the cleaning liquid supply unit 8 supplies the cleaning liquid to the substrate 2.

  The rotating means 6 includes a motor for rotating the substrate 2 supported by a vacuum suction means such as a spin chuck. The developer discharge nozzle 7 includes a drive unit 9 that moves the developer discharge nozzle 7 so that the developer can be discharged onto the substrate 2. The cleaning liquid supply unit 8 includes a nozzle that supplies a cleaning liquid such as water or pure water onto the substrate 2.

  The development processing container 3 is a substantially cylindrical container that accommodates the substrate 2. A discharge pipe 10 for discharging the developer discharged from the developer discharge nozzle 7 is connected to the bottom of the development processing container 3. The developer supplied to the substrate 2 is temporarily stored in the development processing container 3 and then discharged to a waste liquid tank (not shown) via the discharge pipe 10.

  The development processing container 3 includes a first ceiling plate 4 and a second ceiling plate 5 at the top thereof. The first ceiling plate 4 and the second ceiling plate 5 are arranged at appropriate intervals so that the gas in the development processing container 3 can be discharged to the outside through the openings 4a and 5a formed respectively. Openings 4a and 5a are formed in the first ceiling plate 4 and the second ceiling plate 5, respectively. The openings 4 a and 5 a are openings formed in the first ceiling plate 4 when the first ceiling plate 4 and the second ceiling plate 5 are temporarily viewed with respect to a cross section orthogonal to the surface to be processed of the substrate 2. 4a and the opening part 5a formed in the 2nd ceiling board 5 are formed so that the part which overlaps may not arise. For example, the opening 4a of the first ceiling panel 4 is formed near the center, and the opening 5a of the second ceiling panel 5 is formed near the periphery.

  According to the substrate development processing apparatus 1, the opening 4 a formed in the first ceiling plate 4 and the opening 5 a formed in the second ceiling plate 5 are formed so as not to overlap each other. The developer mist generated when the developer is discharged from the developer discharge nozzle 7 onto the supported and rotated substrate 2 is not scattered outside the development processing container 3 from the openings 4a and 5a. For this reason, it is possible to greatly reduce the possibility that the developer mist adheres to an unprocessed substrate waiting outside the development processing container 3 and causes development failure of these substrates.

  However, the substrate developing apparatus 1 can prevent the developer mist from splashing out of the developing container 3 and prevent the developer mist from adhering to an unprocessed substrate that is on standby. It is unavoidable that a developing failure occurs due to the developer adhering to the substrate 2 being processed in the substrate 3. Such adhesion of the developer to the substrate 2 being processed in the developing container 3 occurs as follows.

  The developer discharged from the developer discharge nozzle 7 onto the substrate 2 is scattered from the substrate 2 by the centrifugal force that rotates the substrate 2 and temporarily stored in the development processing container 3. The developer in the development processing container 3 evaporates the solvent contained in the developer, increases its viscosity, and finally solidifies. The development waste liquid once solidified is deposited in the development processing container 3 without being discharged to the waste liquid tank via the discharge pipe 10. The solidified developer deposited in the developing container 3 is separated into dust by the air flow generated by the rotation of the substrate 2 and flutters up and reattaches to the substrate 2 being processed. Here, when particularly fine dust adheres to the substrate 2, it cannot be cleaned even with the cleaning liquid, and the dust composed of the developer component adheres to the cleaned substrate 2. As a result, the dust on the substrate 2 becomes a mask and adversely affects the subsequent etching process.

  In view of this, a substrate development processing apparatus has been proposed that can prevent adhesion of developer, particularly dust, to the substrate being processed in the development processing container (see, for example, Patent Document 2). FIG. 8 is a diagram schematically showing the configuration of the substrate development processing apparatus 11 disclosed in Patent Document 2. As shown in FIG. The substrate development processing apparatus 11 includes a development processing container 13 in which a substrate 12 is accommodated, a rotating unit 14 that supports and rotates the substrate 12 by vacuum suction, a developer discharge nozzle 15 that applies a developer to the substrate 12, and a substrate. 12, a cleaning liquid supply means (not shown) for supplying a cleaning liquid, an exhaust pipe 16 for discharging the gas in the developing container 13, and an amount of air passing through the exhaust pipe 16 are adjusted to change the exhaust amount from the exhaust pipe 16. And an exhaust damper 17.

  Since the rotation means 14, the developer discharge nozzle 15 and the cleaning liquid supply means (not shown) have the same configuration as the rotation means 6, developer discharge nozzle 7 and cleaning liquid supply means 8 shown in FIG. . The development processing container 13 includes a discharge pipe 18 at the bottom thereof, and the discharge pipe 18 is connected to a waste liquid tank 19 from which the discharged developer is discharged. The side wall member of the development processing container 13 is provided with an exhaust pipe 16 that is a pipe for discharging the gas in the development processing container 13. The amount of gas exhausted from the exhaust pipe 16 can be changed by adjusting the amount of air passing through the exhaust pipe 16 by the exhaust damper 17.

  In the substrate development processing apparatus 11, the air volume is changed by the exhaust damper 17 so that the exhaust amount of the gas in the development processing container 13 other than when the developer is supplied is smaller than the exhaust amount when the developer is supplied. To make adjustments. As a result, the exhaust amount is suppressed except when the developer is supplied, and the outside air that does not contain the vapor of the solvent in the developer can be suppressed from flowing into the development processing container 13. Accordingly, it is possible to prevent a decrease in the developer solvent vapor concentration in the development processing container 13 and to reduce the evaporation of the solvent contained in the development waste liquid temporarily stored in the development processing container 13. Since the increase in viscosity can be suppressed, solidification of the developer and accumulation in the development processing container 13 can be prevented. For this reason, it can prevent that the dust which the solidified developing solution peeled adheres to the board | substrate 12. FIG.

  However, even when the substrate development processing apparatus 11 disclosed in Patent Document 2 that can prevent dust from the developer from adhering to the substrate 12 is used, there still arises a problem that the developer adheres to the substrate 12. Conventionally, the developer adhering to the substrate is considered to be only the developer scattered from the developer discharge nozzle, the developer repelled by the collision force against the substrate, or the developer solidified in the development processing container. It has been confirmed that this is not the only one.

  The adherence of the developer to the substrate other than the above causes occurs, for example, as follows. First, when cleaning a developing solution and a photosensitive material film dissolved in the developing solution, a cleaning solution mist which is a fine droplet of the cleaning solution is generated when the applied cleaning solution collides with the substrate and repels. Then, the developing solution to be cleaned and the photosensitive material film dissolved in the developing solution are blown off by the pressure of the cleaning solution and mixed with the cleaning solution mist. Further, the mist mixed with the developing solution and the photosensitive material film dissolved in the developing solution is applied onto the substrate after cleaning, which has stopped applying the cleaning solution due to gravity, a change in the air flow caused by the discharge of the gas in the developing processing container, and the like. Drop and reattach. In this way, the developer is attached to the substrate, and further, the photosensitive material film dissolved in the developer is attached to the substrate.

  When such a problem occurs, a mist containing a developing solution adheres to a portion where the photosensitive material film is to be formed, dissolves the photosensitive material film in the portion, and a subsequent etching process using such a photosensitive material film as a mask When this is performed, disconnection or the like occurs in the formed conductive pattern. Further, when the mist including the photosensitive material film adheres to the portion where the photosensitive material film is to be removed and the etching process is performed, the portion to which the mist adheres serves as a mask, which causes a short circuit of the conductive pattern. Accordingly, there is a need for a substrate development processing apparatus that can avoid the problem that the developing solution and the photosensitive material film dissolved in the developing solution are mixed with the cleaning solution mist generated at the time of cleaning and reattached to the substrate.

JP-A-4-360517 JP 2002-353114 A

  An object of the present invention is to provide a substrate cleaning method capable of preventing the mist containing the cleaning liquid generated when the cleaning liquid collides with and repels the substrate during substrate cleaning, a method of manufacturing a semiconductor device using the cleaning method, A display device including a semiconductor device manufactured by using a manufacturing method, a substrate cleaning device, and a substrate development processing device are provided.

The present invention provides a substrate cleaning method for cleaning a substrate to be processed by supplying a cleaning liquid onto the substrate to be processed contained in the substrate cleaning processing container.
Rotating the substrate to be processed at a predetermined number of rotations;
Supplying a cleaning liquid to the substrate to be processed at a predetermined supply amount;
A first detection step for detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed and is present above the substrate to be processed in the substrate cleaning processing container;
And a rotation speed adjustment step of adjusting the rotation speed of the substrate to be processed according to the amount of mist detected in the first detection step.

In the present invention, in the rotation speed adjustment step,
When the amount of mist detected in the first detection step is larger than a predetermined amount, the number of rotations of the substrate to be processed is made smaller than the predetermined number of rotations.

In the present invention, in the rotation speed adjustment step,
When the amount of mist detected in the first detection step is larger than a predetermined amount, the number of rotations of the substrate to be processed is adjusted to be 50 to 80% of the predetermined number of rotations.

In the present invention, after the rotation speed adjustment step,
A second detection step for detecting the amount of mist generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed, the mist being present above the substrate to be processed in the substrate cleaning processing container; And a cleaning liquid amount adjusting step of adjusting a supply amount of the cleaning liquid per unit time according to the amount of mist detected in the detecting step.

Further, the present invention provides a cleaning liquid amount adjustment step,
When the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid per unit time is made smaller than the predetermined supply amount.

Further, the present invention provides a cleaning liquid amount adjustment step,
When the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid supplied per unit time is adjusted to be 80 to 90% of the predetermined supply amount. And

Further, the present invention provides at least a step of supplying the cleaning liquid to the substrate to be processed with a predetermined supply amount.
Discharging the gas in the substrate cleaning container with a predetermined exhaust pressure;
After the cleaning liquid amount adjustment step,
A third detection step for detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed and is present above the substrate to be processed in the substrate cleaning processing container;
And an exhaust pressure adjusting step for adjusting an exhaust pressure for discharging the gas in the substrate cleaning processing container in accordance with the amount of mist detected in the third detecting step.

In the exhaust pressure adjustment step of the present invention,
When the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is made larger than the predetermined exhaust pressure.

In the exhaust pressure adjustment step of the present invention,
When the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is adjusted to be 1.3 to 1.6 times the predetermined exhaust pressure.

Further, the present invention provides an exhaust pressure adjustment step,
A fourth detection step of detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed and is present above the substrate to be processed in the substrate cleaning apparatus;
And a step of discharging the substrate to be processed in the substrate cleaning processing container when the amount of mist detected in the fourth detection step is larger than a predetermined amount.

The present invention also provides a photosensitive material film forming step of forming a photosensitive material film by applying a photosensitive material on a semiconductor substrate, an exposure step of selectively exposing the photosensitive material film on the semiconductor substrate, and an exposed photosensitive material film. And a developing step of developing a resist pattern on the semiconductor substrate by applying a developing solution to the semiconductor substrate on which the substrate is formed, supplying a cleaning solution onto the semiconductor substrate to which the developing solution is applied, and cleaning the semiconductor substrate A device manufacturing method comprising:
In the development process,
A method of manufacturing a semiconductor device, comprising: cleaning a semiconductor substrate by supplying a cleaning liquid onto the semiconductor substrate using the substrate cleaning method according to any one of the above.

According to another aspect of the present invention, there is provided a semiconductor device manufactured by the semiconductor device manufacturing method described above,
And an image element portion that operates when a voltage is supplied through the semiconductor device.

Further, the present invention provides a substrate cleaning apparatus for supplying a cleaning liquid onto a substrate to be processed and cleaning the substrate to be processed.
A substrate cleaning container for accommodating a substrate to be processed;
A rotating means for supporting and rotating the substrate to be processed;
Cleaning liquid supply means for supplying a cleaning liquid to the substrate to be processed;
Mist detection means for detecting the amount of mist present above the substrate to be processed in the substrate cleaning processing container, which is a mist generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed;
And a control means for controlling the rotation means so as to adjust the rotation speed of the substrate to be processed in accordance with the amount of mist detected by the mist detection means.

In the present invention, the control means includes
The cleaning liquid supply unit is controlled to adjust the supply amount of the cleaning liquid in accordance with the amount of mist detected by the detection unit.

The present invention also includes a discharge means for discharging the gas in the substrate cleaning processing container,
The control means
The discharge means is controlled so as to adjust the exhaust pressure of the gas according to the amount of mist detected by the detection means.

The present invention also provides a substrate to be processed on which a photosensitive material film is formed, the developer applied to the substrate to be exposed after the photosensitive material film is formed, and the substrate to which the developer is applied. A substrate development processing apparatus for developing a resist pattern on a substrate to be processed by supplying a cleaning liquid to the substrate and cleaning the substrate to be processed,
The substrate cleaning apparatus according to any one of the above,
A substrate to be processed on which a photosensitive material film is formed, comprising developer applying means for applying a developing solution to the substrate to be exposed after the photosensitive material film is formed.

  According to the present invention, the step of rotating the substrate to be processed at a predetermined number of revolutions, the step of supplying the cleaning liquid to the substrate to be processed with a predetermined supply amount, and the cleaning liquid supplied to the substrate to be processed repelled by the substrate to be processed. A first detection step of detecting the amount of mist present above the substrate to be processed in the substrate cleaning processing container, and to be processed according to the amount of mist detected in the first detection step The substrate to be processed is cleaned including a rotation speed adjustment step for adjusting the rotation speed of the substrate. In such a substrate cleaning method, when supplying the cleaning liquid to the substrate to be processed, the number of rotations of the substrate to be processed is changed according to the amount of mist generated when the cleaning liquid is repelled by the substrate to be processed, thereby generating mist. Therefore, it is possible to prevent the mist containing the cleaning liquid from adhering to the substrate.

  According to the invention, in the rotation speed adjustment step, when the amount of mist detected in the first detection step is larger than a predetermined amount, the rotation speed of the substrate to be processed is made smaller than the predetermined rotation speed. Thus, by reducing the rotation speed of the substrate to be processed, it is possible to reduce the amount of mist generated when the cleaning liquid collides with the substrate to be processed and rebounds.

  According to the invention, in the rotation speed adjustment step, when the amount of mist detected in the first detection step is larger than a predetermined amount, the rotation speed of the substrate to be processed is 50 to 80% of the predetermined rotation speed. Adjust so that By adjusting the number of rotations of the substrate to be processed to a value in such a range, it is possible to reduce the possibility that the substrate to be processed cannot be sufficiently cleaned due to the insufficient number of rotations.

  According to the invention, the cleaning liquid supplied to the substrate to be processed is repelled by the substrate to be processed after the rotation speed adjusting step, and is present above the substrate to be processed in the substrate cleaning processing container. A second detecting step for detecting the amount of mist; and a cleaning liquid amount adjusting step for adjusting a supply amount of the cleaning liquid per unit time according to the amount of mist detected in the second detecting step. In such a substrate cleaning method, since the number of rotations of the substrate to be processed is changed, the supply amount of the cleaning liquid per unit time is changed according to the amount of mist, and the generation of mist can be further suppressed. Further, it is possible to more reliably prevent the mist containing the cleaning liquid from adhering to the substrate.

  According to the present invention, in the cleaning liquid amount adjustment step, when the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid per unit time is made smaller than the predetermined supply amount. . Thus, by reducing the supply amount of the cleaning liquid, it is possible to reduce the amount of mist generated when the cleaning liquid collides with the substrate to be processed and rebounds.

  According to the invention, in the cleaning liquid amount adjustment step, when the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid supplied per unit time is set to a predetermined supply amount. Adjust to 80-90%. By adjusting the supply amount of the cleaning liquid to be in such a range, it is possible to reduce the possibility that the substrate to be processed cannot be sufficiently cleaned due to the insufficient supply amount of the cleaning liquid.

  Further, according to the present invention, at least before the step of supplying the cleaning liquid to the substrate to be processed with the predetermined supply amount, the step of discharging the gas in the substrate cleaning processing container with the predetermined exhaust pressure and the step of adjusting the cleaning liquid amount A third detection step of detecting the amount of mist that is generated when the cleaning liquid supplied to the substrate to be processed is repelled by the substrate to be processed, and is present above the substrate to be processed in the substrate cleaning processing container; And an exhaust pressure adjusting step for adjusting an exhaust pressure for discharging the gas in the substrate cleaning processing container in accordance with the amount of mist detected in the three detecting steps. In such a substrate cleaning method, the number of rotations of the substrate to be processed is changed, the supply amount of the cleaning liquid is changed, the exhaust pressure is changed in accordance with the amount of mist, and the generated mist is placed in the substrate cleaning processing container. Since the gas can be discharged to the outside of the substrate cleaning processing container, it is possible to further prevent the mist containing the cleaning liquid from adhering to the substrate.

  According to the invention, in the exhaust pressure adjustment step, when the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is made larger than the predetermined exhaust pressure. By increasing the exhaust pressure in this way, the generated mist can be discharged to the outside together with the gas in the substrate cleaning processing container, so that the amount of mist in the substrate cleaning processing container can be reduced.

  According to the invention, in the exhaust pressure adjustment step, when the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is 1.3 to 1.6 times the predetermined exhaust pressure. Adjust so that By adjusting the exhaust pressure to a value in this range, for example, the substrate having the photosensitive material film to which the developer is applied is cleaned, and a pattern is formed using the photosensitive material film remaining after cleaning as a mask. In this case, it is possible to prevent the substrate from being insufficiently washed due to the exhaust pressure becoming excessively high, and to reduce the possibility of the yield being lowered.

  Further, according to the present invention, after the exhaust pressure adjustment step, the mist generated by the repelling of the cleaning liquid supplied to the substrate to be processed is generated on the substrate to be processed in the substrate cleaning apparatus. And a step of discharging the substrate to be processed in the substrate cleaning processing container when the amount of mist detected in the fourth detection step is larger than a predetermined amount. In such a substrate cleaning method, the amount of mist is a predetermined amount even after changing the rotation speed of the substrate to be processed, the supply amount of the cleaning liquid, and the exhaust pressure for discharging the gas in the substrate cleaning processing container. If it is larger than that, the substrate is discharged. Therefore, it is possible to determine that the substrate is defective without being subjected to an inspection process for at least the discharged substrate.

  According to the invention, the method for manufacturing a semiconductor device includes a photosensitive material film forming step of forming a photosensitive material film by applying a photosensitive material on a semiconductor substrate, and exposure for selectively exposing the photosensitive material film on the semiconductor substrate. A resist pattern is formed on the semiconductor substrate by applying a developer to the semiconductor substrate on which the exposed photosensitive material film is formed and supplying the cleaning solution to the semiconductor substrate to which the developer is applied to wash the semiconductor substrate. A developing step of developing the substrate, and in the developing step, the semiconductor substrate is cleaned by supplying a cleaning liquid onto the semiconductor substrate using the substrate cleaning method described above.

  In such a method of manufacturing a semiconductor device, since the substrate cleaning method described above is used in the development process, the amount of mist generated by repelling the collision between the cleaning liquid and the substrate can be reduced. It is possible to prevent the photosensitive material film dissolved in the mist from being mixed with the mist and adhering to the substrate. Therefore, for example, when a photosensitive material film is formed on the surface of the substrate provided with the conductive film on the side where the conductive film is provided, and the conductive pattern is formed using the photosensitive material film as a mask, a short circuit is formed on the formed conductive pattern. It is possible to prevent the occurrence of defects such as disconnection.

  According to the present invention, there is also provided a display device including a semiconductor device manufactured by the method for manufacturing a semiconductor device described above, and an image element unit that operates when a voltage is supplied through the semiconductor device. . For this reason, a favorable thing without defects, such as a short circuit and a disconnection, can be mounted in a display apparatus in the conductive pattern formed in a semiconductor device.

  Further, according to the present invention, a substrate cleaning processing container that accommodates a substrate to be processed, a rotating unit that supports and rotates the substrate to be processed, a cleaning liquid supply unit that supplies a cleaning liquid to the substrate to be processed, and a substrate that is supplied to the substrate to be processed. Mist generated when the cleaning liquid is repelled by the substrate to be processed, the mist detecting means for detecting the amount of mist existing above the substrate to be processed in the substrate cleaning processing container, and the mist detected by the mist detecting means. There is provided a substrate cleaning apparatus including a control unit that controls a rotating unit so as to adjust a rotation number of a substrate to be processed in accordance with an amount. By using such a substrate cleaning apparatus, the number of rotations of the substrate can be adjusted according to the amount of mist, and the above-described substrate cleaning method can be realized.

  Further, according to the present invention, the control means can control the cleaning liquid supply means to adjust the supply amount of the cleaning liquid according to the amount of mist detected by the detection means. The above-described substrate cleaning method of adjusting the supply amount of the cleaning liquid when the mist amount is large can be realized.

  In addition, according to the present invention, the control unit includes a discharge unit that discharges the gas in the substrate cleaning processing container, and the control unit controls the discharge unit to adjust the gas exhaust pressure according to the amount of mist detected by the detection unit. Since the control is performed, it is possible to realize the above-described substrate cleaning method in which the exhaust pressure is adjusted when the mist amount is large after adjusting the rotation speed and the supply amount of the cleaning liquid.

  Further, according to the present invention, a substrate to be processed on which a photosensitive material film is formed, the developer being applied to the substrate to be exposed after the photosensitive material film is formed, and the substrate being processed to which the developer is applied A substrate development processing apparatus for developing a resist pattern on a substrate to be processed by supplying a cleaning liquid onto the substrate to clean the substrate to be processed includes the substrate cleaning device described above and a substrate to be processed on which a photosensitive material film is formed. And a developer applying means for applying a developer to the substrate to be exposed after the photosensitive material film is formed. By using such a substrate development processing apparatus, it is possible to reduce the amount of mist generated when the cleaning liquid and the substrate collide and repel, so that the developer applied by the developer applying means and the developer It is possible to prevent the dissolved photosensitive material film from mixing with the mist and adhering to the substrate, and to develop a resist pattern with few defects.

  FIG. 1 is a system diagram schematically showing the configuration of a substrate development processing apparatus 21 preferably used in the substrate cleaning method of the present invention. In the example shown in FIG. 1, the substrate development processing apparatus 21 is used to execute the substrate cleaning processing method of the present invention for manufacturing a semiconductor device. The substrate development processing device 21 is a semiconductor substrate (hereinafter simply referred to as a substrate) 22 which is a substrate to be processed on which a photosensitive material film is formed, and a developer is applied to the substrate 22 exposed after the photosensitive material film is formed. The resist pattern is developed on the substrate 22 by supplying a cleaning solution onto the substrate 22 to which the developer is applied and cleaning the substrate 22.

  The substrate development processing apparatus 21 includes a developer discharge nozzle 23 that is a developer application unit that applies a developer to the substrate 22, a substrate cleaning processing container 24 that houses the substrate 22, and a rotation unit 25 that supports and rotates the substrate 22. A cleaning liquid supply nozzle 26 which is a cleaning liquid supply means for supplying a cleaning liquid to the substrate 22, an exhaust pipe 27 which is a discharge means for discharging the gas and mist in the substrate cleaning processing container 24, and the cleaning liquid supplied to the substrate 22 Mist detection means 28 that detects the amount of mist that is repelled by the substrate 22 and exists above the substrate 22 in the substrate cleaning processing container 24, and the amount of mist that is detected by the mist detection means 28 Accordingly, a control means 29 for controlling the operation of the substrate development processing apparatus 21 is included.

  A conductive film such as an oxide film or a metal film is formed on the substrate 22, and a photosensitive material film is formed on the surface of the substrate 22 on which the conductive film is formed. After the photosensitive material film is formed on the substrate 22, it is selectively exposed through a mask in an exposure apparatus (not shown). The substrate 22 is placed on the rotating means 25 in the substrate cleaning container 24 with the surface on which the photosensitive material film is formed (hereinafter referred to as a surface to be processed) facing up.

  The substrate cleaning container 24 is a hollow container having an outer diameter that is substantially cylindrical. A discharge pipe 30 for discharging the developer discharged from the developer discharge nozzle 23 is connected to the bottom of the substrate cleaning processing container 24. The developer and the cleaning liquid supplied to the substrate 22 are temporarily stored in the substrate cleaning processing container 24, and then discharged to the waste liquid tank 31 through the discharge pipe 30. For this reason, at least during the supply of the cleaning liquid, the inside of the substrate cleaning processing container 24 is sealed.

  Further, an exhaust pipe 27 that is a pipe for discharging gas and mist in the substrate cleaning processing container 24 is connected to the side wall member of the substrate cleaning processing container 24. The exhaust pipe 27 is provided with an exhaust pump 32 for discharging gas and mist exhausted through the exhaust pipe 27. The exhaust pipe 27 is a gas for evaporating the solvent in the developer, a developer mist generated by the collision between the developer and the substrate 22 when discharging the developer, and a cleaning liquid and the substrate 22 when discharging the cleaning liquid. The cleaning liquid mist generated by the collision can be discharged to the outside of the substrate cleaning processing container 24.

  The exhaust pump 32 that exhausts the gas and mist in the substrate cleaning processing container 24 is provided with a pump drive motor, and the exhaust pressure can be changed by changing the rotation speed of the pump drive motor. An exhaust pressure sensor 33 is provided between a connection portion between the exhaust pipe 27 and the substrate cleaning container 24 and the exhaust pump 32. The exhaust pressure detected by the exhaust pressure sensor 33 is input to the control means 29, and the rotational speed of the pump drive motor of the exhaust pump 32 is controlled by the control means 29 to which the detected value of the exhaust pressure is input.

  The rotation means 25 provided in the substrate cleaning processing container 24 fixes the holding member 34 on which the substrate 22 is placed and the holding member 34, and rotates the substrate 22 by rotating the holding member 34 around the axis. The shaft member 35 is configured to include a motor 36 that is a drive source for rotating the rotating shaft member 35. A suction means is connected to the holding member 34 via a pipe line or the like. The holding member 34 holds the substrate 22 by vacuum-sucking a surface opposite to the surface to be processed of the substrate 22 placed on the upper surface thereof.

  The motor 36, which is a drive source for rotating the rotary shaft member 35, is controlled by a motor rotation control unit 37 so that the rotation speed can be adjusted. The motor rotation control unit 37 changes the rotation speed of the motor 36 by, for example, controlling the drive voltage applied to the motor 36 by PMW (Pulse Width Modulation). The operation of the motor rotation control unit 37 is controlled by the control means 29.

  The developer discharge nozzle 23 is a developer application unit that applies the developer to the substrate 22. The developer discharge nozzle 23 is provided above the substrate 22 with a space from the surface to be processed of the substrate 22, and discharges the developer to substantially the center of the surface to be processed of the substrate 22.

  As a developer discharged from the developer discharge nozzle 23 and developing a resist pattern using a difference in chemical reaction between a photosensitive material film in an exposed portion and a photosensitive material film in an unexposed portion, For example, an alkaline developer such as TMAH (tetramethylammonium hydroxide) is used. The developer discharged from the developer discharge nozzle 23 is supplied from a developer storage tank (not shown) to the developer discharge nozzle 23 via a pipe by a pump. The operation of the developer discharge nozzle 23 is controlled by the control means 29 so as to discharge a constant discharge amount of the developer according to the type of photosensitive material film, the viscosity of the developer, and the like.

  The cleaning liquid discharge nozzle 26 is a cleaning liquid supply unit that supplies the cleaning liquid onto the substrate 22 to which the developer is applied. The cleaning liquid discharge nozzle 26 is provided above the substrate 22 at a distance from the surface to be processed of the substrate 22 and discharges the cleaning liquid to a substantially central portion of the surface to be processed of the substrate 22 to which the developer is applied. As the cleaning liquid, for example, water or pure water is used. By applying a cleaning solution to the substrate 22 to which the developing solution is applied, the developing solution remaining on the substrate 22 and the photosensitive material film that dissolves in the developing solution are washed away, and the photosensitive material film that does not dissolve in the developing solution remains, thereby leaving a resist pattern. Form.

  The cleaning liquid discharged from the cleaning liquid discharge nozzle 26 is supplied from a cleaning liquid storage tank (not shown) to the cleaning liquid discharge nozzle 26 via a pipe by a pump 38. Between the cleaning liquid discharge nozzle 26 and the cleaning liquid storage tank, cleaning liquid flow rate adjusting means 39 for adjusting the supply amount of the cleaning liquid is provided. The cleaning liquid flow rate adjusting means 39 can adjust the supply amount of the cleaning liquid per unit time, and is constituted by, for example, a flow rate control valve such as a variable throttle valve. The operation of the cleaning liquid flow rate adjusting means 39 is controlled by the control means 29.

  Further, the substrate development processing apparatus 21 detects the amount of mist generated by the cleaning liquid supplied to the substrate 22 being repelled by the substrate 22 and existing above the substrate 22 in the substrate cleaning processing container 24. Mist detection means 28 is provided. As the mist detecting means 28, for example, a known particle counter can be used.

  The control means 29 is a processing circuit realized by a central processing unit (CPU) or the like, and controls the operation of the entire apparatus. The control unit 29 includes a time measuring unit that measures time according to the frequency of the commercial power supply, for example, and the exhaust pressure control unit 32 and the motor rotation control unit 37 described above according to the amount of mist detected by the mist detection unit 28. And the operation of the cleaning liquid flow rate adjusting means 39 is controlled.

  Hereinafter, manufacturing of a semiconductor device using the substrate cleaning method of the present invention will be described. The method of manufacturing a semiconductor device of the present invention includes a photosensitive material film forming step of forming a photosensitive material film by applying a photosensitive material on the substrate 22, an exposure step of selectively exposing the photosensitive material film on the substrate 22, and exposure. Development for developing a resist pattern on the substrate 22 by applying a developer to the substrate 22 on which the photosensitive material film is formed, supplying a cleaning solution onto the substrate 22 to which the developer is applied, and cleaning the substrate 22 Process. Since the photosensitive material film forming step and the exposure step are performed by a known method, description thereof is omitted.

  In the development process, the substrate cleaning method of the present invention is used. In the substrate cleaning method of the present invention, the step of rotating the substrate 22 at a predetermined rotational speed, the step of supplying the cleaning liquid to the substrate 22 with a predetermined supply amount, and the cleaning liquid supplied to the substrate 22 are repelled by the substrate 22. A first detection step for detecting the amount of mist generated and present above the substrate 22 in the substrate cleaning container 24, and rotation of the substrate 22 in accordance with the amount of mist detected in the first detection step And a rotation speed adjusting step for adjusting the number.

  First, before the step of rotating the substrate 22 at a predetermined number of rotations, the substrate 22 is placed on the holding member 34 of the rotation means 25 in the substrate cleaning container 24 and fixed to the rotation means 25 by vacuum suction or the like. . Further, before the step of rotating the substrate 22 at a predetermined number of rotations, a step of discharging the gas in the substrate cleaning processing container 24 at a predetermined exhaust pressure is performed.

In the step of discharging the gas in the substrate cleaning processing container 24, the gas and mist in the substrate cleaning processing container 24 are discharged at a predetermined exhaust pressure controlled by the exhaust pressure control unit 32. Here, the exhaust pressure is a difference between the pressure inside the substrate cleaning processing container 24 and the atmospheric pressure (10.34 mmH ₂ O at 15 ° C.) which is the pressure outside the substrate cleaning processing container 24. The predetermined exhaust pressure is Although it is determined by the number of rotations of the substrate 22 described later, the supply amount of the cleaning liquid, etc., it is preferably 10 to 15 mmH ₂ O at 15 ° C.

When the exhaust pressure is less than 10 mmH ₂ O, the gas when the solvent in the developer evaporates, the developer mist generated by the collision between the developer and the substrate 22 when the developer is discharged, and the cleaning solution are discharged. There is a possibility that the cleaning liquid mist generated due to the collision between the cleaning liquid and the substrate 22 cannot be sufficiently discharged to the outside of the substrate cleaning processing container 24. On the other hand, if the exhaust pressure exceeds 15 mmH ₂ O, the gas flow rate in the substrate cleaning processing container 24 increases, and the substrate becomes insufficiently cleaned, which may reduce the yield.

  Next, a step of rotating the substrate 22 at a predetermined number of rotations is performed. In the step of rotating the substrate 22 at a predetermined rotation number, the substrate 22 supported by the rotation means 25 is rotated at a predetermined rotation number controlled by the motor rotation control unit 37. Thereafter, the developer is discharged from the developer discharge nozzle 23 onto the surface to be processed of the substrate 22 rotated by the rotation of the rotating means 25. Note that the discharge of the developer may be performed before the substrate 22 is rotated depending on the type of developer, photosensitive material film, and the like. The amount of developer discharged from the developer discharge nozzle 23 is determined by the type of photosensitive material film and developer.

  Here, the predetermined number of rotations is determined by the type of the substrate 22, the viscosity of the developer, the type of the photosensitive material film, etc., but is preferably 2000 to 4000 rpm. When the rotational speed is less than 2000 rpm, when the developer applied to the rotating substrate 22 is supplied to the peripheral portion of the substrate 22 by centrifugal force when the substrate 22 rotates, the developer is supplied to the peripheral portion. This takes time, and there is a risk of developing unevenness in which the line width is nonuniform between the resist pattern near the center and the resist pattern near the periphery. On the other hand, when the rotational speed exceeds 4000 rpm, the rotation of the substrate 22 becomes too fast, and a large amount of mist, which is a fine droplet of the developer, is generated due to collision and repulsion between the developer and the substrate 22. Since the inside of the container 24 is contaminated, it is necessary to increase the cleaning frequency of the substrate cleaning processing container 24, and the productivity is lowered.

  Through such a process, the developer applied to the substrate 22 is supplied to the peripheral edge of the surface to be processed of the substrate 22. For example, when a positive photosensitive material film is formed, the exposed portion of the photosensitive material film is removed from the developer. Dissolve in. Next, a step of supplying a cleaning solution for washing away the photosensitive material film dissolved in the developer with the cleaning solution is performed.

  In the step of supplying the cleaning liquid to the substrate 22 with a predetermined supply amount, the controller 29 discharges the developer when a time lapse determined in accordance with the type of the developer and the photosensitive material film is detected by the timing unit of the controller 29. The supply of the developer from the nozzle 23 is stopped, and the developer remaining on the substrate 22 and the photosensitive material film dissolved in the developer are adjusted to a cleaning solution such as water or pure water, and the supply amount thereof is adjusted by the cleaning solution flow rate adjusting means 39. Meanwhile, the substrate 22 is cleaned by supplying it from the cleaning liquid discharge nozzle 27 onto the substrate 22.

  Here, the predetermined supply amount of the cleaning liquid is determined depending on the type of the substrate 22, the size of the substrate 22, the type of the cleaning liquid, and the like, but is preferably 300 to 400 mL per minute. If the supply amount of the cleaning liquid is less than 300 mL per minute, the developer remaining on the substrate 22 and the photosensitive material film dissolved in the developer may not be sufficiently washed away. When the supply amount of the cleaning liquid exceeds 400 mL per minute, the supply amount of the cleaning liquid increases too much, and after the cleaning, the cleaning liquid mixed with the developer and the photosensitive material film stored in the waste liquid tank 31 increases. There is a risk that the cost of.

  When the cleaning liquid is supplied to the substrate 22 here, depending on the type of the substrate 22, the supply amount of the cleaning liquid, the rotation speed of the substrate 22, etc., the cleaning liquid rebounds when the cleaning liquid collides with the substrate. A mist of the cleaning liquid that is a fine droplet of the cleaning liquid may be generated. Therefore, a first detection step for detecting the amount of mist generated by the cleaning liquid repelling the substrate 22 is performed.

  In the first detection step, the amount of mist present above the substrate 22 in the substrate cleaning processing container 24 is detected, which is generated by repelling the cleaning liquid supplied to the substrate 22 on the substrate 22. The first detection step is performed when the time measuring unit of the control unit 29 detects that a predetermined time, for example, 1 to 2 seconds has elapsed since the discharge of the cleaning liquid from the cleaning liquid discharge nozzle 26 is started. The mist detecting means for detecting the amount of mist detects, for example, the amount of mist per unit volume, and inputs the detected amount of mist to the control means 29. The detection of the amount of mist by the mist detection means 28 may be, for example, detection of the amount of mist present in the range above the surface to be processed of the substrate 22 in the substrate cleaning container 24.

FIG. 2 is a diagram showing the relationship between the number of rotations of the substrate and the amount of mist when a cleaning liquid is applied to the substrate on which the oxide film is formed and the substrate on which the metal film is formed. Table 1 also shows the relationship between the number of rotations of the substrate and the amount of mist when the cleaning liquid is applied to the substrate on which the oxide film is formed and the substrate on which the metal film is formed. The detection of the amount of mist by the mist detection means 28 when obtaining the results shown in FIG. 2 was performed with the supply amount of pure water as the cleaning liquid being 300 mL per minute and the exhaust pressure being 15 mmH ₂ O. The amount of mist was obtained by sensing about 15 cm above the processing surface of the substrate from the upper part of the substrate processing container using a particle counter (trade name; MET one model 227B, manufactured by HACH ULTRA ANALYTICS). The amount of mist is the amount of mist having a size of 0.3 μm existing at 100 cm ³ . Further, the volume of the substrate processing container was 3000 cm ³ , and the area of the surface to be processed of the substrate was 126 cm ² .

  As shown in FIG. 2 and Table 1, it can be seen that the amount of mist generated differs depending on the type of substrate. It can also be seen that in a metal film substrate that generates more mist, the amount of mist increases as the number of rotations of the substrate increases. This is because the centrifugal force increases as the number of rotations of the substrate increases, and the repulsive force when the cleaning liquid collides with the substrate also increases.

  It can also be seen that the amount of mist generated differs depending on whether the surface of the substrate is hydrophilic or hydrophobic. In the substrate on which the hydrophilic oxide film is formed, the collision force between the cleaning liquid and the substrate is alleviated to reduce the amount of mist generated, and in the substrate on which the hydrophobic metal film is formed, the cleaning liquid and the substrate This is because the collision force is large and the amount of mist generated increases.

FIG. 3 is a diagram showing the relationship between the amount of mist detected by the mist detecting means 28 and the number of pattern defects in the manufactured semiconductor device. Table 2 also shows the relationship between the amount of mist detected by the mist detection means 28 and the number of pattern defects in the manufactured semiconductor device. The substrate 22 is a substrate on which a photosensitive material film is formed on a metal film, and a substrate to which a developer is applied is exposed after the photosensitive material film is formed. The detection of the amount of mist by the mist detection means 28 when obtaining the results shown in FIG. 3 is performed by setting the rotation speed of the substrate 22 to 2000 rpm, the supply amount of pure water as a cleaning liquid to 300 mL / min, and the exhaust pressure 15 mmH ₂ O. I did it. The method for detecting the amount of mist, the volume of the substrate cleaning processing container 24, and the area of the surface to be processed of the substrate 22 are the same as those obtained when the results shown in FIG.

  As shown in FIG. 3 and Table 2, as the amount of cleaning liquid mist present on the substrate 22 increases, the number of pattern defects on the substrate 22 also increases. This is because the developing solution to be cleaned and the photosensitive material film dissolved in the developing solution are blown off by the pressure of the cleaning solution, and the cleaning solution existing above the substrate 22 having the oxide film exposed when the photosensitive material film is removed. When the application of the cleaning solution is stopped due to gravity, a change in the airflow caused by the discharge of the gas in the development processing container 24, or the like, the mist mixed with the developer and the photosensitive material film is stopped on the substrate after cleaning. This is because a pattern defect is caused by dropping and reattaching.

  Therefore, in order not to cause a pattern defect on the substrate 22, it is necessary to make the amount of mist of the cleaning liquid existing above the substrate 22 smaller than a predetermined amount. The predetermined amount of mist is obtained in advance by a test or the like. For example, the amount of mist is preferably 650 or less, and more preferably 250 or less.

  When the number of mists detected in the first detection step is equal to or less than a predetermined amount, for example, 650 or less, the supply of the cleaning liquid by the cleaning liquid discharge nozzle 26 is stopped, and then the substrate 22 is rotated for a sufficient time. Dry. When the substrate 22 is dried, the rotation of the substrate 22 by the rotating unit 25 and the discharge of the gas in the substrate cleaning processing container 24 from the exhaust pipe 27 are stopped, and the substrate 22 is discharged from the substrate cleaning processing container 24. In this way, the developing process for the substrate 22 is completed.

  On the other hand, when the number of mists detected in the first detection step is larger than a predetermined amount, for example, 650, the rotation speed adjustment for adjusting the rotation speed of the substrate 22 according to the amount of mist detected in the first detection step. A step is performed. In the rotation speed adjustment step, when the amount of mist detected in the first detection step is larger than a predetermined amount, the rotation speed of the substrate 22 is made smaller than the predetermined rotation speed. As a result, the repulsive force caused by the collision between the cleaning liquid and the substrate 22 can be reduced, and the generation of mist can be prevented.

  FIG. 4 is a diagram showing the relationship between the number of rotations of the substrate, the amount of mist detected by the mist detection means 28, and the number of photosensitive material films remaining on the substrate. Table 3 also shows the relationship among the number of rotations of the substrate, the amount of mist detected by the mist detection means 28, and the number of photosensitive materials remaining on the substrate. In addition, the process of the board | substrate at this time was performed as follows.

A photosensitive material is applied to a substrate having a surface area of 126 cm ² with a thickness of 1 μm, and a developer is supplied to the whole surface exposed using a mask having a pattern of lines and spaces, and then an exhaust pressure of 15 mmH _A cleaning solution (pure water) was supplied at 300 mL / min while evacuating with ₂ O, and cleaning was performed for 20 seconds while rotating the substrate. Thereafter, the remaining photosensitive material was inspected using an optical appearance inspection apparatus, and the number thereof was counted. The mist detection method, the volume of the substrate processing container 24, and the like are the same as those obtained when the results shown in FIG. 2 are obtained.

  4 and Table 3, as described above, as the number of rotations of the substrate 22 increases, the amount of mist detected by the mist detecting means 28 increases, while the number of photosensitive materials remaining on the substrate 22 indicates the number of substrates. It is shown that the number of rotations decreases as the number of rotations increases. Therefore, since the amount of mist increases as the number of rotations of the substrate 22 increases, it is preferable to reduce the number of rotations of the substrate 22 in order to reduce the amount of mist, but the number of rotations of the substrate 22 decreases. If it becomes too much, it can be seen that the developing solution and the photosensitive material film dissolved in the developing solution cannot be sufficiently washed away by supplying the cleaning solution.

  The developer and the photosensitive material film are removed by the flow of the cleaning liquid by supplying the cleaning liquid and the flow of the cleaning liquid by the centrifugal force acting on the cleaning liquid supplied onto the substrate 22 by the rotation of the substrate 22. If the rotational speed of the substrate 22 becomes too small, the centrifugal force acting on the cleaning liquid becomes small and the liquid flow of the cleaning liquid toward the outside of the substrate 22 becomes weak. Therefore, the developer and the photosensitive material film remaining on the substrate 22 are efficiently removed. It becomes difficult to remove.

  Therefore, in the rotation speed adjustment step, it is preferable to adjust the rotation speed of the substrate 22 to be 50 to 80% of the predetermined rotation speed, although the rotation speed of the substrate 22 is made smaller than the predetermined rotation speed. For example, when the predetermined rotation speed of the substrate 22 is 2000 rpm, the rotation speed at which the number of remaining photosensitive materials becomes 0 is about 1100 rpm. Further, when the rotational speed was about 1580 rpm, the number of detected mists could be 650 or less, which is a preferable number of mists set in advance.

  The adjustment of the rotation speed of the substrate 22 is preferably determined according to the predetermined rotation speed of the substrate 22. Since the predetermined number of rotations of the substrate 22 is usually determined by the type of the substrate 22, the viscosity of the developer, the type of the photosensitive material film, etc., if the number of rotations of the substrate 22 is excessively reduced, There is a risk that the cleaning efficiency is greatly reduced.

  If the rotational speed of the substrate 22 after the rotational speed adjustment determined according to the rotational speed of the predetermined substrate 22 is less than 50% of the predetermined rotational speed, the rotation of the substrate 22 becomes too slow, and the substrate 22 is sufficiently on the substrate 22. The developer and the photosensitive material film may not be removed. When the rotational speed of the substrate 22 after the rotational speed adjustment exceeds 80% of the predetermined rotational speed, there is a possibility that the effect of reducing the amount of mist cannot be sufficiently obtained by changing the rotational speed.

  When the rotation speed adjustment step is performed and a time determined in advance, e.g., 1 to 2 seconds, is detected by the time measuring unit of the control means 29, the cleaning liquid supplied to the substrate 22 is repelled by the substrate 22 and generated. A second detection step of detecting the amount of mist present above the substrate 22 in the substrate cleaning container 24 is performed. The second detection step is performed in the same manner as the first detection step.

  When the amount of mist detected in the second detection step is equal to or less than a predetermined amount, the developing process of the substrate 22 is performed in the same manner as in the case where the amount of mist detected in the first detection step is equal to or less than a predetermined amount. Exit.

  On the other hand, when the number of mists detected in the second detection step is larger than a predetermined amount, a cleaning liquid amount adjustment step of adjusting the supply amount of the cleaning liquid per unit time according to the amount of mist detected in the second detection step To do. In the cleaning liquid amount adjustment step, when the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid per unit time is made smaller than the predetermined supply amount. As a result, the repulsive force caused by the collision between the cleaning liquid and the substrate 22 can be reduced, and the generation of mist can be prevented.

FIG. 5 is a diagram showing the relationship between the supply amount of the cleaning liquid per unit time and the amount of mist detected by the mist detection means 28. Table 4 also shows the relationship between the amount of cleaning liquid supplied per unit time and the amount of mist detected by the mist detecting means 28. The mist amount was detected by setting the number of rotations of the substrate to 2000 rpm and the exhaust pressure to 15 mmH ₂ O. The substrate used was the same as that obtained when the results shown in FIG. 3 were obtained.

  As shown in FIG. 5 and Table 4, the amount of mist could be reduced as the cleaning liquid supply amount per unit time was reduced. However, if the supply amount of the cleaning liquid per unit time becomes too small, the efficiency of removing the developer and the photosensitive material film is lowered, and there arises a problem that the photosensitive material film remains on the substrate 22.

  Therefore, in the cleaning liquid amount adjustment step, the cleaning liquid supply amount per unit time is set to be smaller than the predetermined supply amount, but the cleaning liquid supply amount per unit time is adjusted to be 80 to 90% of the predetermined supply amount. It is preferable. For example, when the predetermined supply amount of the cleaning liquid is 300 mL / min, and the supply amount of the cleaning liquid is about 270 mL / min, the number of detected mists is set to 650 or less, which is the predetermined preferable number of mists. I was able to. On the other hand, when the supply amount of the cleaning liquid is about 250 mL per minute, it becomes difficult to supply the cleaning liquid to the center of the substrate 22.

  The adjustment of the supply amount of the cleaning liquid is preferably determined according to the predetermined supply amount of the cleaning liquid. The supply amount of the cleaning liquid determined in advance is usually determined by the type of the substrate 22, the size of the substrate 22, the type of the cleaning liquid, and the like. Therefore, the cleaning efficiency of the substrate 22 is reduced by excessively reducing the supply amount of the cleaning liquid. May decrease significantly.

  If the supply amount of the cleaning liquid determined according to the supply amount of the predetermined cleaning liquid is less than 80% of the predetermined supply amount, the supply amount becomes too small, and the developer and the photosensitive material film on the substrate 22 can be sufficiently washed away. There is no fear. When the supply amount of the cleaning liquid exceeds 90% of the predetermined supply amount, the effect of reducing the amount of mist by changing the cleaning liquid amount may not be sufficiently obtained.

  When the cleaning liquid amount adjustment step is performed, and the time measuring unit of the control means 29 detects that a predetermined time, for example, 1 to 2 seconds has elapsed, the cleaning liquid supplied to the substrate 22 is repelled by the substrate 22 and generated. A third detection step of detecting the amount of mist present above the substrate 22 in the substrate cleaning container 24 is performed. The third detection step is performed in the same manner as the first detection step.

  When the amount of mist detected in the third detection step is equal to or less than a predetermined amount, the developing process of the substrate 22 is performed in the same manner as in the case where the amount of mist detected in the first detection step is equal to or less than a predetermined amount. Exit.

  On the other hand, if the number of mists detected in the third detection step is larger than a predetermined amount, the exhaust pressure for discharging the gas in the substrate cleaning processing container 24 is adjusted according to the amount of mist detected in the third detection step. An exhaust pressure adjustment step is performed. In the exhaust pressure adjustment step, when the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is made larger than the predetermined exhaust pressure. Accordingly, the amount of mist discharged from the exhaust pipe 27 to the outside of the substrate cleaning processing container 24 can be increased, and the amount of mist in the substrate cleaning processing container 24 can be reduced.

  FIG. 6 is a diagram showing the relationship between the exhaust pressure by the exhaust pipe 27 and the amount of mist detected by the mist detecting means 28. The relationship between the exhaust pressure by the exhaust pipe 27, the amount of mist detected by the mist detecting means 28, and the number of developing droplets remaining on the back surface of the substrate, which is the surface opposite to the side supplied with the cleaning liquid, is shown. As shown in FIG. The detection of the amount of mist was carried out at a substrate rotation speed of 2000 rpm and a cleaning liquid supply amount of 300 mL per minute. The substrate used was the same as that obtained when the results shown in FIG. 3 were obtained.

  Here, the number of remaining back surfaces is the number of films formed on the back surface opposite to the surface to be processed of the substrate by developing droplets, and is the number confirmed by visual observation. When the substrate becomes insufficiently washed, developer droplets remain on the back surface of the substrate, and a white film remains after drying. The number of remaining back surfaces was counted as one having a width of about 2 to 4 mm and a length of about 5 to 6 mm.

  In order to remove the developer adhering to the back surface, it is necessary to supply pure water as a cleaning solution to the back surface of the substrate and clean the back surface simultaneously with the cleaning of the processing surface or after cleaning the processing surface. The nozzle that supplies the cleaning liquid for cleaning the back surface is provided, for example, at a distance of about 7 mm from the end of the substrate. Here, if the back surface cleaning is performed excessively, the cleaning liquid flows out to the holding member 34 that holds the substrate by vacuum suction near the center of the substrate, and a vacuum failure occurs, resulting in equipment trouble of the substrate development processing apparatus 21. May occur. For this reason, it is preferable that the number of remaining back surfaces is small.

  As shown in FIG. 6 and Table 5, as the exhaust pressure was increased, the amount of mist could be reduced. However, if the exhaust pressure becomes too high, the photosensitive material film is peeled off from the substrate, and the line width of the pattern increases. Further, when the exhaust pressure became too high, the substrate was insufficiently cleaned, and the remaining back surface was generated.

Therefore, in the exhaust pressure adjustment step, although the exhaust pressure is made larger than the predetermined exhaust pressure, it is preferable to adjust the exhaust pressure to be 1.3 to 1.6 times the predetermined exhaust pressure. For example, in the case where the predetermined exhaust pressure is 15 mmH ₂ O, when the exhaust pressure is adjusted to 19 mmH ₂ O, the number of detected mists can be reduced to 650 or less which is the predetermined preferable number of mists. On the other hand, when the exhaust pressure was 25 mmH ₂ O, it was difficult for the cleaning liquid to be applied to the substrate, and the line width of the formed pattern was adversely affected.

  The adjustment of the exhaust pressure is preferably determined according to a predetermined exhaust pressure. The predetermined exhaust pressure is usually determined by the number of rotations of the substrate 22, the supply amount of the cleaning liquid, and the like. Therefore, if the exhaust pressure is excessively increased, the cleaning efficiency of the substrate 22 may be significantly reduced. .

  If the exhaust pressure determined according to the predetermined exhaust pressure is less than 1.3 times the predetermined exhaust pressure, the exhaust pressure is changed to increase the amount of mist discharged, and the substrate cleaning process vessel 24 There is a possibility that the effect of reducing the amount of mist cannot be obtained sufficiently. If the exhaust pressure exceeds 1.6 times the predetermined exhaust pressure, the line width of the pattern may increase.

  When the exhaust pressure adjustment step is performed and a predetermined time, for example, 1 to 2 seconds elapses, is detected by the timing unit of the control means 29, the cleaning liquid supplied to the substrate 22 is repelled by the substrate 22 and generated. A fourth detection step of detecting the amount of mist present above the substrate 22 in the substrate cleaning container 24 is performed. The fourth detection step is performed in the same manner as the first detection step.

  When the amount of mist detected in the fourth detection step is equal to or less than the predetermined amount, the developing process of the substrate 22 is performed in the same manner as in the case where the amount of mist detected in the first detection step is equal to or less than the predetermined amount. Exit.

  On the other hand, when the number of mists detected in the fourth detection step is larger than a predetermined amount, a step of discharging the substrate 22 in the substrate cleaning processing container 24 is performed. As a result, even after the number of rotations of the substrate 22, the supply amount of the cleaning liquid, and the exhaust pressure for discharging the gas in the substrate cleaning processing container 24 are changed, the amount of mist is larger than a predetermined amount. Since the board | substrate 22 is discharged | emitted, it can determine with the possibility that a pattern defect exists in the board | substrate 22 at least about the discharged | emitted board | substrate 22 without using an inspection process.

  As described above, the developing process using the substrate cleaning method of the present invention is performed. For the substrate 22 that is not the substrate discharged due to the large amount of mist detected in the fourth detection step and is subjected to the development process, the conductive film is etched using the developed resist pattern as a mask. And a step of removing the resist pattern. A semiconductor device in which a conductive pattern is formed is manufactured through these steps.

  According to the semiconductor device manufacturing method using the substrate cleaning method of the present invention, when the detected amount of mist is larger than a predetermined value, the number of rotations of the substrate 22, the supply amount of the cleaning liquid, and the exhaust pressure are in this order. Adjust each value. In this way, generation of mist due to repulsion between the cleaning liquid and the substrate 22 can be prevented, and the generated mist can be discharged, so that the mist present on the substrate 22 in the substrate cleaning processing container 24 is developed. It is possible to prevent the mixture of the photosensitive material film dissolved in the solution and the developer from adhering to the substrate 22.

  For this reason, it is possible to prevent the photosensitive material film that should not be removed from being removed by the attached developer and the photosensitive material film in the mist from adhering to the portion where the photosensitive material film is to be removed. A good semiconductor device can be manufactured. Such a semiconductor device is mounted on a display device such as a liquid crystal display device (LCD), a plasma display device (PDP), or an organic electroluminescence (EL) display device.

  In the substrate cleaning method of the present invention, as described above, the respective values are adjusted in the order of the number of rotations of the substrate, the supply amount of the cleaning liquid, and the exhaust pressure. The advantages of performing the adjustment in this order will be described below. First, if the exhaust pressure is adjusted prior to the adjustment of the number of rotations of the substrate and the supply amount of the cleaning liquid, it is necessary to discharge a large amount of mist present on the substrate in the substrate cleaning processing container. However, the mist can be efficiently removed by discharging the reduced amount of mist after reducing the amount of mist by some method rather than discharging a large amount of mist. Therefore, the exhaust pressure is preferably adjusted after adjusting the rotation speed of the substrate and the supply amount of the cleaning liquid.

  Further, when the adjustment of the supply amount of the cleaning liquid is performed before the adjustment of the rotation speed of the substrate, there are the following problems. The amount of the developer and the photosensitive material film remaining on the substrate decreases as the cleaning time elapses. Further, the cleaning efficiency of the substrate is greatly influenced by the supply amount of the cleaning liquid rather than the rotation speed of the substrate. That is, if the supply amount of the cleaning liquid is adjusted prior to the adjustment of the rotational speed of the substrate, the supply amount of the cleaning liquid is adjusted in a state where a larger amount of developer and photosensitive material film remain than when the rotational speed is adjusted. As a result, the cleaning efficiency is lowered, and the developer and the photosensitive material film dissolved in the developer may not be washed away sufficiently. Therefore, it is preferable that the adjustment of the supply amount of the cleaning liquid is performed after the adjustment of the rotation speed of the substrate. For the above reasons, in the substrate cleaning method of the present invention, the respective values are adjusted in the order of the number of rotations of the substrate, the supply amount of the cleaning liquid, and the exhaust pressure.

  In the substrate cleaning method of the present invention, the developer is applied to the semiconductor substrate on which the exposed photosensitive material film is formed, and the semiconductor substrate is cleaned by supplying the cleaning solution onto the semiconductor substrate to which the developer is applied. Thus, the present invention is not limited to use in a developing process for developing a resist pattern on a semiconductor substrate. For example, the resist pattern may be used in a substrate cleaning process in which foreign substances present on the substrate are removed with a cleaning liquid.

  By performing the substrate cleaning process using the substrate cleaning method of the present invention, it is possible to reduce the amount of cleaning liquid mist generated by the collision between the cleaning liquid and the substrate. For this reason, it is possible to prevent the mist of the cleaning liquid from reattaching to the substrate after cleaning, thereby preventing the formation of a watermark and the formation of an oxide film or the like on the substrate. In addition, as a substrate cleaning apparatus used for such a substrate cleaning process, the thing similar to the board | substrate development processing apparatus 21 can be used except not having the developing solution discharge nozzle 23. FIG.

It is a systematic diagram which shows roughly the structure of the board | substrate development processing apparatus 21 used suitably for the board | substrate cleaning method of this invention. It is a figure which shows the relationship between the rotation speed of a board | substrate when the washing | cleaning liquid is provided to the board | substrate with which an oxide film is formed, and the board | substrate with which a metal film is formed, and the quantity of mist. It is a figure which shows the relationship between the quantity of the mist detected by the mist detection means 28, and the number of the pattern defects of the manufactured semiconductor device. It is a figure which shows the relationship between the rotation speed of a board | substrate, the quantity of the mist detected by the mist detection means 28, and the number of the photosensitive material films which remain | survive on a board | substrate. FIG. 4 is a diagram showing the relationship between the supply amount of cleaning liquid per unit time and the amount of mist detected by mist detection means 28. FIG. 4 is a diagram showing the relationship between the exhaust pressure by the exhaust pipe 27 and the amount of mist detected by the mist detection means 28. It is a figure which shows roughly the structure of the board | substrate development processing apparatus 1 disclosed by patent document 1. FIG. It is a figure which shows schematically the structure of the board | substrate development processing apparatus 11 disclosed by patent document 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 21 Substrate development processing device 22 Substrate 23 Developer discharge nozzle 24 Substrate cleaning processing container 25 Rotating means 26 Cleaning liquid discharge nozzle 27 Exhaust pipe 28 Mist detection means 29 Control means 30 Discharge pipe 31 Waste liquid tank 32 Exhaust pump 33 Exhaust pressure sensor 34 Holding member 35 Rotating shaft member 36 Motor 37 Motor rotation controller 38 Pump 39 Cleaning liquid flow rate adjusting means

Claims (16)

In a substrate cleaning method for cleaning a substrate to be processed by supplying a cleaning liquid onto the substrate to be processed contained in a substrate cleaning processing container,
Rotating the substrate to be processed at a predetermined number of rotations;
Supplying a cleaning liquid to the substrate to be processed at a predetermined supply amount;
A first detection step for detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed and is present above the substrate to be processed in the substrate cleaning processing container;
And a rotation speed adjustment step of adjusting the rotation speed of the substrate to be processed according to the amount of mist detected in the first detection step. In the rotation speed adjustment step,
2. The substrate cleaning method according to claim 1, wherein when the amount of mist detected in the first detection step is larger than a predetermined amount, the rotational speed of the substrate to be processed is made smaller than the predetermined rotational speed. In the rotation speed adjustment step,
2. The method according to claim 1, wherein when the amount of mist detected in the first detection step is larger than a predetermined amount, the rotational speed of the substrate to be processed is adjusted to be 50 to 80% of the predetermined rotational speed. Alternatively, the substrate cleaning method according to 2. After the speed adjustment step,
A second detection step for detecting the amount of mist generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed, the mist being present above the substrate to be processed in the substrate cleaning processing container; The substrate cleaning method according to claim 1, further comprising a cleaning liquid amount adjusting step of adjusting a supply amount of the cleaning liquid per unit time according to the amount of mist detected in the detecting step. Method. In the cleaning liquid volume adjustment step,
5. The substrate cleaning method according to claim 4, wherein when the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid per unit time is made smaller than the predetermined supply amount. . In the cleaning liquid volume adjustment step,
When the amount of mist detected in the second detection step is larger than a predetermined amount, the supply amount of the cleaning liquid supplied per unit time is adjusted to be 80 to 90% of the predetermined supply amount. The substrate cleaning method according to claim 4 or 5. Before the step of supplying the cleaning liquid to the substrate to be processed with at least a predetermined supply amount,
Discharging the gas in the substrate cleaning container with a predetermined exhaust pressure;
After the cleaning liquid amount adjustment step,
A third detection step for detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed and is present above the substrate to be processed in the substrate cleaning processing container;
The exhaust pressure adjustment step of adjusting the exhaust pressure which discharges | emits the gas in a board | substrate washing | cleaning processing container according to the quantity of mist detected at a 3rd detection step is included, The any one of Claims 4-6 characterized by the above-mentioned. The substrate cleaning method as described in one. In the exhaust pressure adjustment step,
8. The substrate cleaning method according to claim 7, wherein when the amount of mist detected in the third detection step is larger than a predetermined amount, the exhaust pressure is made larger than the predetermined exhaust pressure. In the exhaust pressure adjustment step,
8. The exhaust pressure is adjusted to be 1.3 to 1.6 times the predetermined exhaust pressure when the amount of mist detected in the third detection step is larger than a predetermined amount. Alternatively, the substrate cleaning method according to 8. After the exhaust pressure adjustment step,
A fourth detection step of detecting the amount of mist that is generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed and is present above the substrate to be processed in the substrate cleaning apparatus;
And a step of discharging the substrate to be processed in the substrate cleaning processing container when the amount of mist detected in the fourth detection step is larger than a predetermined amount. The substrate cleaning method as described in one. A photosensitive material film forming step of applying a photosensitive material on a semiconductor substrate to form a photosensitive material film, an exposure step of selectively exposing the photosensitive material film on the semiconductor substrate, and a semiconductor on which the exposed photosensitive material film is formed A developing method of developing a resist pattern on a semiconductor substrate by applying a developing solution to the substrate, supplying a cleaning solution onto the semiconductor substrate to which the developing solution is applied, and cleaning the semiconductor substrate. There,
In the development process,
A method for manufacturing a semiconductor device, comprising: supplying a cleaning liquid onto a semiconductor substrate using the substrate cleaning method according to claim 1 to clean the semiconductor substrate. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 11;
A display device comprising: an image element portion that operates when a voltage is supplied through the semiconductor device. In a substrate cleaning apparatus for supplying a cleaning liquid onto a substrate to be processed and cleaning the substrate to be processed,
A substrate cleaning container for accommodating a substrate to be processed;
A rotating means for supporting and rotating the substrate to be processed;
Cleaning liquid supply means for supplying a cleaning liquid to the substrate to be processed;
Mist detection means for detecting the amount of mist present above the substrate to be processed in the substrate cleaning processing container, which is a mist generated by repelling the cleaning liquid supplied to the substrate to be processed on the substrate to be processed;
And a control means for controlling the rotation means so as to adjust the rotation speed of the substrate to be processed according to the amount of mist detected by the mist detection means. The control means
14. The substrate cleaning apparatus according to claim 13, wherein the cleaning liquid supply means is controlled to adjust the supply amount of the cleaning liquid in accordance with the amount of mist detected by the detection means. Including discharge means for discharging the gas in the substrate cleaning processing container;
The control means
15. The substrate cleaning apparatus according to claim 13, wherein the discharge means is controlled so as to adjust the exhaust pressure of the gas according to the amount of mist detected by the detection means. A substrate to be processed on which a photosensitive material film is formed, wherein a developer is applied to the substrate to be exposed after the photosensitive material film is formed, and a cleaning solution is supplied onto the substrate to be processed to which the developer is applied. A substrate development processing apparatus for developing a resist pattern on a substrate to be processed by cleaning the substrate to be processed,
The substrate cleaning apparatus according to any one of claims 13 to 15,
A substrate development processing apparatus comprising: a substrate to be processed on which a photosensitive material film is formed, and a developer applying unit that applies a developer to the substrate to be exposed after the photosensitive material film is formed. .

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