JPH0856134A - Piezoelectric vibrator for oscillating overtone - Google Patents

Piezoelectric vibrator for oscillating overtone

Info

Publication number
JPH0856134A
JPH0856134A JP21040894A JP21040894A JPH0856134A JP H0856134 A JPH0856134 A JP H0856134A JP 21040894 A JP21040894 A JP 21040894A JP 21040894 A JP21040894 A JP 21040894A JP H0856134 A JPH0856134 A JP H0856134A
Authority
JP
Japan
Prior art keywords
electrode
overtone
main
electrodes
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21040894A
Other languages
Japanese (ja)
Inventor
Katsuyuki Nakamura
勝幸 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daishinku Corp
Original Assignee
Daishinku Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daishinku Corp filed Critical Daishinku Corp
Priority to JP21040894A priority Critical patent/JPH0856134A/en
Publication of JPH0856134A publication Critical patent/JPH0856134A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a piezoelectric vibrator for oscillating overtone with high reliability in which more stable third-degree overtone oscillation is attained and high frequency processing is conducted. CONSTITUTION:Two main electrodes 21a, 22a confining major vibration of overtone vibration and a peripheral electrode 41a forming a vibration energy absorbing section via an electrode absence part 31 constituting a vibration energy propagation section around the two electrodes 21a, 22a are provided on one side of a piezoelectric disk 11, and at least the major electrode, the electrode absence part, a full side electrode with respect to a face opposite to the surrounding electrode are formed on the other side of the piezoelectric disk 11. Moreover, the thickness of the electrode adjacent between the major electrodes at least among the peripheral electrodes is selected to be thicker than the thickness of the main electrodes.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、オーバートーン用共振
回路を必要とせずに所望のオーバートーン周波数での発
振を可能にするオーバートーン発振用圧電振動子に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric resonator for overtone oscillation which enables oscillation at a desired overtone frequency without requiring an overtone resonance circuit.

【0002】[0002]

【従来の技術】従来の技術を図9、図10とともに説明
する。図9は従来の圧電基板の平面図であり、図10は
図9の底面図である。圧電基板1は厚みすべり振動を行
うATカットの水晶板からなり、その圧電基板1の表面
中央部に主電極2及び圧電基板1の裏面中央部に電極5
を設けることにより主振動エネルギ閉じ込め部を設け、
その周囲に上記主振動エネルギ閉じ込め部の遮断周波数
fcよりも高い遮断周波数Fcをもつ振動エネルギ伝搬
部(電極不在部)3を設け、更にその外側に上記遮断周
波数Fcよりも低い遮断周波数を持つ振動エネルギ吸収
部(周辺部電極)4を設け、上記遮断周波数Fcが、所
望のオーバートーン振動の副振動周波数よりも低く、か
つ、このオーバートーン振動の主振動周波数f0より高
く設定されており、上記振動エネルギ吸収部が所望のオ
ーバートーン次数より低次の振動モード(基本波振動モ
ードを含む)のエネルギを吸収するとともに、上記主振
動よりも高い副振動を外部へ漏洩させるよう構成されて
いた。
2. Description of the Related Art A conventional technique will be described with reference to FIGS. FIG. 9 is a plan view of a conventional piezoelectric substrate, and FIG. 10 is a bottom view of FIG. The piezoelectric substrate 1 is made of an AT-cut quartz plate that causes thickness shear vibration, and the main electrode 2 is provided at the center of the front surface of the piezoelectric substrate 1 and the electrode 5 is provided at the center of the back surface of the piezoelectric substrate 1.
By providing the main vibration energy confinement section,
A vibration energy propagating portion (electrode absent portion) 3 having a cutoff frequency Fc higher than the cutoff frequency fc of the main vibration energy confining portion is provided around it, and vibration having a cutoff frequency lower than the cutoff frequency Fc is further provided outside thereof. An energy absorbing portion (peripheral electrode) 4 is provided, and the cutoff frequency Fc is set to be lower than the desired sub-vibration frequency of the overtone vibration and higher than the main vibration frequency f0 of this overtone vibration. The vibration energy absorbing portion is configured to absorb energy in a vibration mode (including a fundamental vibration mode) of a lower order than a desired overtone order and to leak a sub-vibration higher than the main vibration to the outside.

【0003】[0003]

【発明が解決しようとする課題】例えば、三次オーバー
トーン発振させた圧電振動子において、より高周波化を
行うために、主電極の直径を小さくしたり、圧電基板の
直径を小さくしていく等の設計手法があるが、主電極を
小さくしすぎると三次オーバートーンのCI値も悪くな
る傾向にある。また主電極を大きくすると三次オーバー
トーンのCI値は良好となるが基本波と三次オーバート
ーンのCI比は2〜4倍になり、一般的に必要とされる
基本波を抑制するためのCI比3倍に対して歩留まりが
50%程度と悪い。また、主部電極の直径を小さくせず
に、圧電基板の直径のみを小さくして高周波化を計る方
法は、エネルギ吸収部である周辺部電極の寸法、形状が
制約されるため、所望の電気的特性が得られない等の問
題があった。そのため、より安定したオーバートーン発
振を困難なものとしていた。
SUMMARY OF THE INVENTION For example, in a piezoelectric vibrator in which a third overtone is oscillated, the diameter of a main electrode is reduced or the diameter of a piezoelectric substrate is reduced in order to increase the frequency. Although there is a design method, if the size of the main electrode is too small, the CI value of the third overtone tends to deteriorate. When the size of the main electrode is increased, the CI value of the third-order overtone becomes better, but the CI ratio of the fundamental wave and the third-order overtone becomes 2 to 4 times, which is a CI ratio for suppressing the fundamental wave that is generally required. The yield is about 50%, which is poor compared to 3 times. In addition, the method of reducing the diameter of the piezoelectric substrate alone without decreasing the diameter of the main portion electrode to increase the frequency is limited by the size and shape of the peripheral electrode, which is the energy absorbing portion, There was a problem that the physical characteristics could not be obtained. Therefore, more stable overtone oscillation is difficult.

【0004】本発明の目的は、三次オーバートーンのC
I値を悪化させることなく、より安定した三次オーバー
トーン発振が得られ、かつ、高周波化が行える信頼性の
高いオーバートーン発振用圧電振動子を提供する。
An object of the present invention is to provide a C of the third order overtone.
Provided is a highly reliable piezoelectric resonator for overtone oscillation, which can obtain more stable third-order overtone oscillation without deteriorating the I value and can achieve high frequency.

【0005】[0005]

【課題を解決するための手段】そこで、本発明は、所望
次数にてオーバートーン発振する圧電振動子であって、
圧電板の片面には、前記所望次数のオーバートーン振動
の主振動を閉じ込める主振動エネルギ閉じ込め部を構成
する主電極と、その周囲に前記振動エネルギ伝搬部を構
成する電極不在部を介して前記振動エネルギ吸収部を構
成する周辺電極とが設けられており、前記圧電板の他の
片面には少なくとも前記主電極と電極不在部、並びに周
辺電極の対向面に全面電極が形成されているオーバート
ーン発振用圧電振動子において、前記主電極を二つに分
けた。
Therefore, the present invention provides a piezoelectric vibrator that oscillates overtone in a desired order,
On one surface of the piezoelectric plate, the main electrode constituting the main vibration energy confining portion for confining the main vibration of the overtone vibration of the desired order, and the vibration through the electrode absent portion constituting the vibration energy propagating portion around the main electrode. An overtone oscillation in which a peripheral electrode that constitutes an energy absorbing portion is provided, at least the main electrode and the electrode absent portion are formed on the other surface of the piezoelectric plate, and a full surface electrode is formed on the opposing surface of the peripheral electrode. In the piezoelectric vibrator for use, the main electrode is divided into two.

【0006】また、周辺電極のうち少なくとも各主電極
間に隣接する箇所の電極厚みを前記主電極の厚みより厚
くした。
Further, the electrode thickness of the peripheral electrodes adjacent to at least the respective main electrodes is made thicker than the thickness of the main electrodes.

【0007】[0007]

【作用】特許請求項1により、主電極径を小さくして
も、励振対向電極の面積が倍になるため、圧電振動子に
おける等価回路の並列容量C0が大きくなる。そして、
基本波のCI値を大きくし、三次オーバートーンのCI
値のみを小さくできるため、基本波と三次オーバートー
ンとのCI比を稼ぎ、基本波の抑制効果を向上させる。
また、オーバートン発振時における発振周波数の可変量
を大きくするため、高周波化が可能となる。
According to the first aspect, even if the diameter of the main electrode is reduced, the area of the excitation counter electrode is doubled, so that the parallel capacitance C 0 of the equivalent circuit in the piezoelectric vibrator is increased. And
Increase the CI value of the fundamental wave to increase the CI of the third overtone.
Since only the value can be reduced, the CI ratio between the fundamental wave and the third-order overtone is earned, and the effect of suppressing the fundamental wave is improved.
Further, since the amount of change in the oscillation frequency at the time of Overton oscillation is increased, it becomes possible to increase the frequency.

【0008】特許請求項2により、厚肉化された周辺電
極が基本波の振動エネルギーをより吸収し、基本波抑制
効果がより一層向上する。
According to claim 2, the thickened peripheral electrode further absorbs the vibration energy of the fundamental wave, and the fundamental wave suppressing effect is further improved.

【0009】前記作用の根拠となる実験データを以下に
示す。図8は、図1に示すような本発明による構成(形
状A、形状Bとする)の圧電振動子において、また、図
9に示すような従来の構成(形状Cとする)の圧電振動
子において、基本波と三次オーバートーンとのCI値の
比較統計データを示すグラフである。以下詳細を説明す
る。実験例の共通事項として、三次オーバートーン発振
で、周波数64MHzの水晶振動子において、水晶板の
直径を4mm、裏面電極の直径を3.6mmとし、いず
れの電極厚みも0.1μmで形成した。そして、形状
A,形状Bについては、電極不在部の寸法(G)を0.
2mm、各主電極(二つの主電極うちの一方の主電極)
の直径を1.2mmとし、形状Cについては、電極不在
部の寸法(G)を0.4mm、主電極の直径を1.75
mmとした。また、形状Aについては、周辺電極の厚み
のみを0.2μmとした。このグラフから、形状C(従
来)にくらべ形状B(特許請求項1に対応する構成)に
よる構成の方が基本波抑制効果が向上し、さらに形状B
より形状A(特許請求項2に対応する構成)と、より基
本波抑制効果向上しているのがわかる。
The experimental data which is the basis of the above-mentioned action is shown below. FIG. 8 shows a piezoelectric vibrator having a structure (shape A and shape B) according to the present invention as shown in FIG. 1, and a piezoelectric vibrator having a conventional structure (shape C) shown in FIG. 6 is a graph showing comparative statistical data of CI values of a fundamental wave and a third-order overtone. The details will be described below. As a common matter in the experimental examples, in a crystal oscillator having a frequency of 64 MHz with a third overtone oscillation, the crystal plate had a diameter of 4 mm, the back electrode had a diameter of 3.6 mm, and each electrode had a thickness of 0.1 μm. For shape A and shape B, the dimension (G) of the electrode absent portion is 0.
2 mm, each main electrode (one of the two main electrodes)
Has a diameter of 1.2 mm, and for shape C, the dimension (G) of the electrode absent portion is 0.4 mm and the diameter of the main electrode is 1.75.
mm. Regarding the shape A, only the thickness of the peripheral electrode was set to 0.2 μm. From this graph, compared to the shape C (conventional), the shape B (the structure corresponding to claim 1) has a better fundamental wave suppression effect, and the shape B is further improved.
It can be seen that the shape A (configuration corresponding to claim 2) and the fundamental wave suppression effect are further improved.

【0010】[0010]

【実施例】次に、本発明の第1の実施例について、図
1、図2を参照にして説明する。図1は本発明の第1の
実施例を示す圧電基板の平面図であり、図2は図1の底
面図である。圧電基板11は、厚みすべり振動を行う円
盤形状のATカット水晶板からなる。その圧電基板11
の表面には、保持方向と直行する方向(図の上下方向)
に並列して、主電極21a,22aが設け、さらに外側
に幅寸法Gの電極不在部31を介して、更にその周辺に
周辺電極41aが設けられている。また、圧電基板11
の裏面には前記表面電極群に対応して、圧電基板11の
ほぼ全面に電極51aが設けられている。このような構
造において、主部電極21a,22aとそれに対応する
裏面電極51aの一部分が主振動エネルギ閉じ込め部を
構成し、電極不在部31とそれに対応する裏面電極51
aの一部分が振動エネルギ伝搬部を構成し、周辺電極4
1aとそれに対応する裏面電極51aの一部分が振動エ
ネルギ吸収部を構成している。また、主部電極21a,
22aは、リード電極21bを介して共通接続されると
ともに、圧電基板11の一端部まで引き出されている。
周辺電極41a及び裏面電極51aは、圧電基板11の
反対側の端部までリード電極41b,51bを形成する
ことにより共通接続されている。そして、これらの電極
は真空蒸着法、あるいはスパッタリング法等により形成
される。尚、第1の実施例では、主電極21a,22a
の並列方向は特に軸方向指定しないで設けたが、圧電基
板X軸方向に向かって、主電極21a,22aを並列し
て設けることにより、振動変位のより大きい基本波が圧
電基板端部の影響を受けてCI値が高くなり、基本波と
三次オーバートーンとのCI比を稼ぐように作用する。
その結果、一層の基本波抑制効果が向上する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view of a piezoelectric substrate showing a first embodiment of the present invention, and FIG. 2 is a bottom view of FIG. The piezoelectric substrate 11 is composed of a disk-shaped AT-cut quartz plate that vibrates in thickness shear. The piezoelectric substrate 11
On the surface of, the direction perpendicular to the holding direction (vertical direction in the figure)
The main electrodes 21a and 22a are provided in parallel with each other, and a peripheral electrode 41a is further provided on the outer side of the main electrode 21a and 22a via an electrode absent portion 31 having a width G. In addition, the piezoelectric substrate 11
An electrode 51a is provided on substantially the entire surface of the piezoelectric substrate 11 on the back surface of the piezoelectric substrate 11 so as to correspond to the surface electrode group. In such a structure, the main part electrodes 21a and 22a and a part of the back surface electrode 51a corresponding thereto constitute a main vibration energy confining part, and the electrode absent part 31 and the back surface electrode 51 corresponding thereto.
A part of a constitutes a vibration energy propagation part, and the peripheral electrode 4
1a and a part of the back surface electrode 51a corresponding thereto constitute a vibration energy absorbing portion. In addition, the main electrode 21a,
22a is commonly connected via the lead electrode 21b and is drawn out to one end of the piezoelectric substrate 11.
The peripheral electrode 41a and the back surface electrode 51a are commonly connected to each other by forming lead electrodes 41b and 51b up to the opposite end of the piezoelectric substrate 11. Then, these electrodes are formed by a vacuum deposition method, a sputtering method, or the like. Incidentally, in the first embodiment, the main electrodes 21a, 22a
Although the parallel direction is not specified in the axial direction, the main electrodes 21a and 22a are provided in parallel in the X-axis direction of the piezoelectric substrate, so that the fundamental wave having a larger vibration displacement is influenced by the end portion of the piezoelectric substrate. In response to this, the CI value becomes high, and acts to earn a CI ratio between the fundamental wave and the third-order overtone.
As a result, the fundamental wave suppression effect is further improved.

【0011】次に、本発明の第2の実施例について、図
3、図4を参照にして説明する。図3は本発明の第2の
実施例を示す圧電基板の平面図である。図4は図3の底
面図である。尚、第1の実施例と同様の部分については
同番号を付した。圧電基板11は、厚みすべり振動を行
う円盤形状のATカット水晶板からなる。その圧電基板
11の表面には、保持方向(図の左右方向)に並列し
て、主電極23a,24aが設け、さらに外側に幅寸法
Gの電極不在部32を介して、更にその周辺に周辺電極
42aが設けられている。また、圧電基板11の裏面に
は前記表面電極群に対応して、圧電基板11のほぼ全面
に電極52aが設けられている。このような構造におい
て、主部電極23a,24aとそれに対応する裏面電極
52aの一部分が主振動エネルギ閉じ込め部を構成し、
電極不在部32とそれに対応する裏面電極52aの一部
分が振動エネルギ伝搬部を構成し、周辺電極42aとそ
れに対応する裏面電極52aの一部分が振動エネルギ吸
収部を構成している。また、主部電極21a,22a
は、共通電極23bにより共通接続されるとともに、リ
ード電極24bにより圧電基板11の一端部まで引き出
されいる。周辺電極42a及び裏面電極52aは、圧電
基板11の反対側の端部までリード電極42b,52b
を形成することにより共通接続されている。そして、こ
れらの電極は真空蒸着法、あるいはスパッタリング法等
により形成される。尚、第2の実施例では、主電極23
a,24aの並列方向は特に軸方向指定しないで設けた
が、圧電基板X軸方向に向かって、主電極23a,24
aを並列して設けることにより、振動変位のより大きい
基本波が圧電基板端部の影響を受けてCI値が高くな
り、基本波と三次オーバートーンとのCI比を稼ぐよう
に作用する。その結果、一層の基本波抑制効果が向上す
る。
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a plan view of a piezoelectric substrate showing a second embodiment of the present invention. FIG. 4 is a bottom view of FIG. The same parts as those in the first embodiment are designated by the same reference numerals. The piezoelectric substrate 11 is composed of a disk-shaped AT-cut quartz plate that vibrates in thickness shear. On the surface of the piezoelectric substrate 11, main electrodes 23a and 24a are provided in parallel in the holding direction (left-right direction in the drawing), and further, the electrode absent portion 32 having a width G is provided on the outer side and further around the periphery. An electrode 42a is provided. Further, on the back surface of the piezoelectric substrate 11, an electrode 52a is provided on almost the entire surface of the piezoelectric substrate 11 corresponding to the above-mentioned surface electrode group. In such a structure, the main-part electrodes 23a, 24a and a part of the back-surface electrode 52a corresponding to the main-part electrodes 23a, 24a constitute a main-vibration energy confining part
The electrode absent portion 32 and a part of the back surface electrode 52a corresponding to it constitute a vibration energy propagation portion, and the peripheral electrode 42a and a part of the back surface electrode 52a corresponding to it constitute a vibration energy absorption portion. In addition, the main electrodes 21a and 22a
Are commonly connected by the common electrode 23b and are led out to one end of the piezoelectric substrate 11 by the lead electrode 24b. The peripheral electrodes 42a and the back surface electrode 52a are connected to the lead electrodes 42b and 52b up to the opposite ends of the piezoelectric substrate 11.
To form a common connection. Then, these electrodes are formed by a vacuum deposition method, a sputtering method, or the like. In the second embodiment, the main electrode 23
The parallel directions of a and 24a are provided without specifying the axial direction, but the main electrodes 23a and 24a are arranged toward the X-axis direction of the piezoelectric substrate.
By providing a in parallel, the fundamental wave having a larger vibration displacement is affected by the end portion of the piezoelectric substrate, and the CI value becomes higher, so that the CI ratio between the fundamental wave and the third-order overtone acts. As a result, the fundamental wave suppression effect is further improved.

【0012】次に、本発明の第3の実施例について、図
5、図6、図7を参照にして説明する。図5は本発明の
第3の実施例を示す圧電基板の平面図であり、図6は図
5のA−A線に沿う断面図であり、図7は図5のB−B
線に沿う断面図である。圧電基板12は、厚みすべり振
動を行う方形状のATカット水晶板からなる。その圧電
基板12の表面には、保持方向と直行する方向(図の左
右方向)に並列して、主電極25a,26aが設け、さ
らに外側に幅寸法Gの電極不在部33を介して、更にそ
の周辺に周辺電極43aが設けられている。また、圧電
基板12の裏面には前記表面電極群に対応して、圧電基
板12のほぼ全面に裏面電極53a(断面図のみ図示)
が設けられている。このような構造において、主部電極
25a,26aとそれに対応する裏面電極53aの一部
分が主振動エネルギ閉じ込め部を構成し、電極不在部3
3とそれに対応する裏面電極53aの一部分が振動エネ
ルギ伝搬部を構成し、周辺電極43aとそれに対応する
裏面電極53aの一部分が振動エネルギ吸収部を構成し
ている。また、主部電極25a,26aは、リード電極
25bを介して共通接続されるとともに、圧電基板12
の一端部まで引き出されている。周辺電極43a及び裏
面電極53aは、圧電基板12の反対側の端部まで設け
ることにより共通接続されている。そして、これらの電
極は例えば真空蒸着により、厚み0.1μmで形成され
る。そして周辺電極43aの一部43cと主電極間に設
けられた周辺電極の凸部43dについては、前記電極群
が露出した蒸着マスクでさらにもう一度真空蒸着を施
す。これにより、上面電極43c,43dの厚みが0.
2μmとなる。このため振動エネルギを吸収する効果が
向上する。尚、第3の実施例では、周辺電極43aの一
部43cと主電極間に設けられた周辺電極の凸部43d
とについて、電極の厚みを厚くしたが、周辺電極43a
のすべての部分の電極の厚みを厚くしても特に問題はな
い。また、第3の実施例では、主電極25a,26aの
並列方向は特に軸方向指定しないで設けたが、圧電基板
X軸方向に向かって、主電極25a,26aを並列して
設けることにより、振動変位のより大きい基本波が圧電
基板端部の影響を受けてCI値が高くなり、基本波と三
次オーバートーンとのCI比を稼ぐように作用する。そ
の結果、一層の基本波抑制効果が向上する。
Next, a third embodiment of the present invention will be described with reference to FIGS. 5, 6 and 7. 5 is a plan view of a piezoelectric substrate showing a third embodiment of the present invention, FIG. 6 is a cross-sectional view taken along the line AA of FIG. 5, and FIG. 7 is a line BB of FIG.
It is sectional drawing which follows the line. The piezoelectric substrate 12 is made of a rectangular AT-cut crystal plate that vibrates in thickness shear. On the surface of the piezoelectric substrate 12, main electrodes 25a and 26a are provided in parallel with the direction orthogonal to the holding direction (the left-right direction in the drawing), and further outside via an electrode absent portion 33 having a width G, and further. A peripheral electrode 43a is provided around the periphery. Further, on the back surface of the piezoelectric substrate 12, a back surface electrode 53a (only a cross-sectional view is shown) is formed on almost the entire surface of the piezoelectric substrate 12 in correspondence with the front surface electrode group.
Is provided. In such a structure, the main part electrodes 25a and 26a and a part of the back surface electrode 53a corresponding to the main part electrodes 25a and 26a constitute a main vibration energy confining part, and the electrode absent part 3 is formed.
3 and a part of the back surface electrode 53a corresponding thereto constitute a vibration energy propagating portion, and the peripheral electrode 43a and a part of the back surface electrode 53a corresponding thereto constitute a vibration energy absorbing portion. The main electrodes 25a and 26a are commonly connected via the lead electrode 25b, and the piezoelectric substrate 12
Has been pulled out to one end. The peripheral electrode 43a and the back surface electrode 53a are commonly connected by being provided up to the opposite end of the piezoelectric substrate 12. Then, these electrodes are formed with a thickness of 0.1 μm by, for example, vacuum vapor deposition. Then, with respect to the convex portion 43d of the peripheral electrode provided between the part 43c of the peripheral electrode 43a and the main electrode, vacuum vapor deposition is performed again with the vapor deposition mask exposing the electrode group. As a result, the thickness of the upper surface electrodes 43c and 43d is 0.
It becomes 2 μm. Therefore, the effect of absorbing vibration energy is improved. Incidentally, in the third embodiment, the convex portion 43d of the peripheral electrode provided between the part 43c of the peripheral electrode 43a and the main electrode.
Regarding the above, the thickness of the electrode was increased, but the peripheral electrode 43a
There is no particular problem even if the thickness of the electrodes in all the parts is increased. Further, in the third embodiment, the parallel direction of the main electrodes 25a, 26a is provided without specifying the axial direction, but by providing the main electrodes 25a, 26a in parallel toward the X-axis direction of the piezoelectric substrate, The fundamental wave having a larger vibration displacement is affected by the end portion of the piezoelectric substrate to increase the CI value, and acts to earn a CI ratio between the fundamental wave and the third overtone. As a result, the fundamental wave suppression effect is further improved.

【0013】[0013]

【発明の効果】特許請求項1により、三次オーバートー
ンのCI値を悪化させることなく、基本波の抑制効果を
向上させ、より安定したオーバートーン発振が得られ、
かつ高周波化が行える信頼性の高いオーバートーン発振
用圧電振動子を提供することができる。
According to claim 1, the effect of suppressing the fundamental wave is improved without deteriorating the CI value of the third-order overtone, and more stable overtone oscillation is obtained.
Further, it is possible to provide a highly reliable piezoelectric resonator for overtone oscillation capable of increasing the frequency.

【0014】特許請求項2により、基本波の振動エネル
ギーをより吸収し、基本波抑制効果が向上し、より安定
したオーバートーン発振が行える信頼性の高いオーバー
トーン発振用圧電振動子を提供することができる。
According to the second aspect of the present invention, there is provided a highly reliable piezoelectric resonator for overtone oscillation, which absorbs the vibration energy of the fundamental wave, improves the fundamental wave suppression effect, and can perform more stable overtone oscillation. You can

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す圧電基板の平面図
である。
FIG. 1 is a plan view of a piezoelectric substrate showing a first embodiment of the present invention.

【図2】図1の底面図である。FIG. 2 is a bottom view of FIG.

【図3】本発明の第2の実施例を示す圧電基板の平面図
である。
FIG. 3 is a plan view of a piezoelectric substrate showing a second embodiment of the present invention.

【図4】図3の底面図である。FIG. 4 is a bottom view of FIG.

【図5】本発明の第3の実施例を示す圧電基板の平面図
である。
FIG. 5 is a plan view of a piezoelectric substrate showing a third embodiment of the present invention.

【図6】図5のA−A線に沿う断面図である。6 is a cross-sectional view taken along the line AA of FIG.

【図7】図5のB−B線に沿う断面図である。7 is a cross-sectional view taken along the line BB of FIG.

【図8】基本波と三次オーバートーンとのCI値の比較
統計データを示すグラフである。
FIG. 8 is a graph showing comparative statistical data of CI values of a fundamental wave and a third-order overtone.

【図9】従来の実施例を示す圧電基板の平面図である。FIG. 9 is a plan view of a piezoelectric substrate showing a conventional example.

【図10】図9の底面図である。FIG. 10 is a bottom view of FIG.

【符号の説明】[Explanation of symbols]

1,11,12・・・圧電基板 2,21a,22a,23a,24a,25a,26a
・・・主電極 3,31,32,33・・・電極不在部 4,41a,42a,43a・・・周辺電極 5,51a,52a,53a・・・裏面電極
1, 11, 12 ... Piezoelectric substrate 2, 21a, 22a, 23a, 24a, 25a, 26a
... Main electrode 3,31,32,33 ... Electrode absent part 4,41a, 42a, 43a ... Peripheral electrode 5,51a, 52a, 53a ... Back surface electrode

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 所望次数にてオーバートーン発振する圧
電振動子であって、圧電板の片面には、前記所望次数の
オーバートーン振動の主振動を閉じ込める主振動エネル
ギ閉じ込め部を構成する主電極と、その周囲に前記振動
エネルギ伝搬部を構成する電極不在部を介して前記振動
エネルギ吸収部を構成する周辺電極とが設けられてお
り、前記圧電板の他の片面には少なくとも前記主電極と
電極不在部、並びに周辺電極の対向面に全面電極が形成
されているオーバートーン発振用圧電振動子において、
前記主電極を二つに分けた事を特徴とするオーバートー
ン発振用圧電振動子。
1. A piezoelectric vibrator for overtone oscillation in a desired order, wherein a main electrode constituting a main vibration energy confinement portion for confining a main vibration of the overtone vibration of the desired order is provided on one surface of a piezoelectric plate. A peripheral electrode that constitutes the vibration energy absorbing portion is provided around the electrode through an electrode absent portion that constitutes the vibration energy propagating portion, and at least the main electrode and the electrode are provided on the other surface of the piezoelectric plate. In the piezoelectric resonator for overtone oscillation, in which the entire surface electrode is formed on the absent portion and the opposing surface of the peripheral electrode,
A piezoelectric vibrator for overtone oscillation, wherein the main electrode is divided into two.
【請求項2】 周辺電極のうち少なくとも各主電極間に
隣接する箇所の電極厚みを前記主電極の厚みより厚くし
た事を特徴とする特許請求項1項記載のオーバートーン
発振用圧電振動子。
2. The piezoelectric vibrator for overtone oscillation according to claim 1, wherein an electrode thickness of at least a portion of the peripheral electrode adjacent to each main electrode is larger than a thickness of the main electrode.
JP21040894A 1994-08-10 1994-08-10 Piezoelectric vibrator for oscillating overtone Pending JPH0856134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21040894A JPH0856134A (en) 1994-08-10 1994-08-10 Piezoelectric vibrator for oscillating overtone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21040894A JPH0856134A (en) 1994-08-10 1994-08-10 Piezoelectric vibrator for oscillating overtone

Publications (1)

Publication Number Publication Date
JPH0856134A true JPH0856134A (en) 1996-02-27

Family

ID=16588827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21040894A Pending JPH0856134A (en) 1994-08-10 1994-08-10 Piezoelectric vibrator for oscillating overtone

Country Status (1)

Country Link
JP (1) JPH0856134A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9503045B2 (en) 2015-01-19 2016-11-22 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, and moving object

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9503045B2 (en) 2015-01-19 2016-11-22 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, and moving object

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