JPH0856053A - Forming method of optical thin film and its forming equipment - Google Patents
Forming method of optical thin film and its forming equipmentInfo
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- JPH0856053A JPH0856053A JP18808394A JP18808394A JPH0856053A JP H0856053 A JPH0856053 A JP H0856053A JP 18808394 A JP18808394 A JP 18808394A JP 18808394 A JP18808394 A JP 18808394A JP H0856053 A JPH0856053 A JP H0856053A
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- Prior art keywords
- compound semiconductor
- thin film
- optical thin
- forming
- film
- Prior art date
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光素子用の光学薄膜の形
成方法に係り、特に、化合物半導体発光素子の光出射面
に形成する光学薄膜の形成方法及び形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an optical thin film for an optical device, and more particularly to a method and an apparatus for forming an optical thin film formed on a light emitting surface of a compound semiconductor light emitting device.
【０００２】[0002]
【従来の技術】化合物半導体レーザではへき開により作
製した共振器の端面に光学薄膜を形成する。光学薄膜の
役割は各端面における反射率の調整及び端面のパッシベ
ーションである。光学薄膜として、発振波長に対して透
明なＳｉＯ2 膜或いはＡｌ2Ｏ3膜などの誘電体薄膜をレ
ーザ共振器の端面上に形成する。誘電体膜の形成には高
周波スパッタリング技術がしばしば用いられている。2. Description of the Related Art In a compound semiconductor laser, an optical thin film is formed on the end face of a resonator produced by cleavage. The role of the optical thin film is to adjust the reflectance on each end face and to passivate the end faces. As the optical thin film, a dielectric thin film such as a SiO 2 film or an Al 2 O 3 film which is transparent to the oscillation wavelength is formed on the end face of the laser resonator. A high frequency sputtering technique is often used for forming the dielectric film.
【０００３】高周波スパッタリング法により成膜を行う
場合、例えば、ヴイエルエスアイ・テクノロジ(VLSI TE
CHNOLOGY)，Ｓ.Ｍ.Ｓｚｅ編集，McGraw-Hill Book Comp
any,（１９８３），３５８頁に記載されているように、
成膜の前処理として試料ステージ側に高周波印加を行い
イオン照射により試料表面の酸化膜の除去を行う。前処
理技術は、半導体層上にスパッタ金属膜を形成して電気
的にコンタクトをとるときに特に重要な技術であり、通
常スパッタ・エッチングと呼ばれる。When the film is formed by the high frequency sputtering method, for example, VLSI technology (VLSI TE) is used.
CHNOLOGY), S.M.Sze editing, McGraw-Hill Book Comp
as described in any, (1983), p. 358,
As a pretreatment for film formation, a high frequency is applied to the sample stage side to remove the oxide film on the sample surface by ion irradiation. The pretreatment technique is a particularly important technique when a sputtered metal film is formed on a semiconductor layer to make electrical contact, and is usually called sputter etching.
【０００４】レーザ共振器の端面にＳｉＯ2 膜或いはＡ
ｌ2Ｏ3膜などの光学薄膜をスパッタリングにより形成す
る場合にも、端面を構成する化合物半導体の表面酸化膜
を除去することにより表面酸化膜による光吸収が無く、
接着強度の大きい光学薄膜を形成することが可能にな
る。A SiO 2 film or A is formed on the end face of the laser resonator.
Even when an optical thin film such as an l 2 O 3 film is formed by sputtering, there is no light absorption by the surface oxide film by removing the surface oxide film of the compound semiconductor forming the end face,
It becomes possible to form an optical thin film having high adhesive strength.
【０００５】[0005]
【発明が解決しようとする課題】上述したように光学薄
膜をスパッタ成膜する前に、スパッタ・エッチング技術
を用いて化合物半導体の表面酸化膜の除去を行うとプラ
ズマ中から飛来するイオン（通常Ａｒイオン）の衝撃に
より化合物半導体表面に所謂プラズマ損傷が生じる。プ
ラズマ損傷領域には非発光センタ等の欠陥による準位が
導入されているためレーザの発光効率低下や素子の劣化
を招くという課題がある。As described above, when the surface oxide film of the compound semiconductor is removed by the sputter etching technique before the optical thin film is formed by sputtering, the ions (usually Ar) So-called plasma damage occurs on the surface of the compound semiconductor due to the impact of ions. Since a level due to a defect such as a non-radiative center is introduced into the plasma damaged region, there is a problem that the emission efficiency of the laser is lowered and the element is deteriorated.
【０００６】[0006]
【課題を解決するための手段】第１の真空室に投入され
たレーザ共振器の端面に対して高周波放電により生成し
たＨラジカルを照射することによりレーザ共振器の端面
を構成する化合物半導体の表面酸化膜を除去する。試料
を大気に曝すことなく第２の真空室に移動・投入した
後、表面酸化膜を除去したレーザ共振器の端面に対し通
常の高周波スパッタリング技術を用いてＳｉＯ2 膜或い
はＡｌ2Ｏ3膜などの光学薄膜を所定の厚さだけ形成す
る。A surface of a compound semiconductor forming an end face of a laser resonator by irradiating the end face of the laser resonator placed in a first vacuum chamber with H radicals generated by high frequency discharge. The oxide film is removed. After moving and loading the sample into the second vacuum chamber without exposing it to the atmosphere, the SiO 2 film or Al 2 O 3 film etc. is applied to the end face of the laser resonator from which the surface oxide film has been removed, using the usual high frequency sputtering technique. The optical thin film is formed to a predetermined thickness.
【０００７】[0007]
【作用】本発明によれば、高周波放電により生成した低
エネルギのＨラジカルの拡散流をレーザ共振器の端面に
照射して化合物半導体の表面酸化膜を除去している為、
化合物半導体表面に欠陥等の損傷を生じることなく表面
酸化膜の除去が可能である。表面酸化膜を除去した試料
を大気に曝さず、引き続きＳｉＯ2 膜、或いは、Ａｌ2
Ｏ3膜をスパッタ成膜している為、表面酸化膜のないレ
ーザ共振器端面に光学薄膜を形成できる。According to the present invention, the surface oxide film of the compound semiconductor is removed by irradiating the end face of the laser resonator with the diffused flow of low energy H radicals generated by the high frequency discharge.
The surface oxide film can be removed without causing damage such as defects on the surface of the compound semiconductor. The sample from which the surface oxide film has been removed is not exposed to the air, and the SiO 2 film or Al 2
Since the O 3 film is formed by sputtering, an optical thin film can be formed on the end facet of the laser resonator without the surface oxide film.
【０００８】[0008]
（実施例１）本発明の一実施例を図１に示す工程図及び
図３に示す成膜装置の概略図を用いて説明する。ＧａＡ
ｓ層１００が露出した試料では通常ＧａＡｓの自然酸化
膜が厚さ３〜５ｎｍ程度の表面酸化膜１０１として存在
する（図１（ａ））。(Embodiment 1) An embodiment of the present invention will be described with reference to the process chart shown in FIG. 1 and the schematic view of a film forming apparatus shown in FIG. GaA
In the sample in which the s layer 100 is exposed, a natural oxide film of GaAs is usually present as the surface oxide film 101 having a thickness of 3 to 5 nm (FIG. 1A).
【０００９】上記のような試料を図３に示す成膜装置の
前処理チャンバに投入する。前処理チャンバの真空度は
１Ｅ−４〜１Ｅ−６torr以下の高真空に保持してある。
次いでＨ2 ガス１０sccmを流量制御してラジカル発生源
を経由して前処理チャンバに流す。その後、ｒｆ高周波
電源及びｒｆ印加切換えスイッチを用いて所定時間ラジ
カル発生源にｒｆ高周波を印加する。この間、ラジカル
発生源でＨ2 からＨラジカルが生成され、前処理チャン
バの試料表面にＨラジカルが照射される。Ｈラジカル照
射処理によりＧａＡｓ層１００上の表面酸化膜１０１は
除去される（図１（ｂ））。The sample as described above is put into the pretreatment chamber of the film forming apparatus shown in FIG. The degree of vacuum of the pretreatment chamber is maintained at a high vacuum of 1E-4 to 1E-6 torr or less.
Then, 10 sccm of H 2 gas is flow controlled to flow into the pretreatment chamber via the radical generation source. After that, the rf high frequency power supply and the rf application changeover switch are used to apply the rf high frequency to the radical generation source for a predetermined time. During this time, H 2 radicals are generated from H 2 by the radical generation source, and the surface of the sample in the pretreatment chamber is irradiated with H radicals. The surface oxide film 101 on the GaAs layer 100 is removed by the H radical irradiation treatment (FIG. 1B).
【００１０】その後、試料を図３に示すスパッタチャン
バにゲートバルブ等を介して移動・投入する。スパッタ
チャンバに一定量のＡｒガスを導入した後、ｒｆ高周波
電源及びｒｆ印加切換えスイッチを用いてＳｉＯ2 より
なるスパッタ・ターゲットにｒｆ高周波を印加すること
によりスパッタ成膜を行い、ＧａＡｓ層１００上にＳｉ
Ｏ2 膜１０２を堆積する（図１（ｃ））。After that, the sample is moved and put into the sputtering chamber shown in FIG. 3 through a gate valve or the like. After introducing a certain amount of Ar gas into the sputtering chamber, an rf high frequency power source and an rf application changeover switch are used to apply an rf high frequency to a sputtering target made of SiO 2 to perform sputter film formation, and form a film on the GaAs layer 100. Si
An O 2 film 102 is deposited (FIG. 1 (c)).
【００１１】本実施例では、１台のｒｆ高周波電源とｒ
ｆ印加切換えスイッチを用いてラジカル発生源及びスパ
ッタ・ターゲットへの高周波印加を行っている。これに
より成膜装置の小型化・簡略化が図られている。ラジカ
ル発生源及びスパッタ・ターゲット用に各々別個にｒｆ
高周波電源を備えることが可能である。In this embodiment, one rf high frequency power source and r
High frequency application is performed to the radical generation source and the sputter target using the f application switch. As a result, the film forming apparatus is downsized and simplified. Separate rf for radical source and sputter target
It is possible to provide a high frequency power supply.
【００１２】また、本実施例では前処理チャンバとスパ
ッタチャンバがゲートバルブで仕切られているが、同一
チャンバ内で場所を換えることにより、前処理とスパッ
タ成膜が行えるようにすることも可能である。Further, in the present embodiment, the pretreatment chamber and the sputter chamber are partitioned by the gate valve, but it is also possible to perform the pretreatment and the sputter film formation by changing the locations in the same chamber. is there.
【００１３】また、前処理チャンバ及びスパッタチャン
バ内のステージに加熱機構を設けることにより、Ｈラジ
カル照射処理効率の改善及びスパッタ膜の膜質改善を図
ることも可能である。It is also possible to improve the efficiency of H radical irradiation treatment and the quality of the sputtered film by providing a heating mechanism in the stages in the pretreatment chamber and the sputtering chamber.
【００１４】また、本実施例では光学薄膜としてＳｉＯ
2膜１０２を堆積した例について記載したが、他の誘電
体膜、例えば、Ａｌ2Ｏ3，ＴｉＯ2，ＭｇＯ，Ｓｉ
3Ｎ4，アモルファスＳｉ膜及び誘電体膜を含む多層膜を
堆積する場合についても本発明は有効である。In this embodiment, SiO is used as the optical thin film.
Although the example in which the 2 film 102 is deposited is described, other dielectric films such as Al 2 O 3 , TiO 2 , MgO and Si are used.
The present invention is also effective when a multilayer film including 3 N 4 , an amorphous Si film, and a dielectric film is deposited.
【００１５】また、本実施例ではＧａＡｓ層１００上に
光学薄膜を堆積した例について記載したが、他の化合物
半導体例えばＩｎＰ，ＩｎＧａＡｓ等でも本発明は有効
である。In this embodiment, an example in which an optical thin film is deposited on the GaAs layer 100 has been described, but the present invention is also effective for other compound semiconductors such as InP and InGaAs.
【００１６】（実施例２）本発明の一実施例を図２に示
す工程図及び図３に示す成膜装置のブロック図を用いて
説明する。ＧａＡｓ層２００及びＡｌＧａＡｓ層２０１
の積層構造の側面が露出した試料では通常ＧａＡｓ及び
ＡｌＧａＡｓの自然酸化膜が厚さ３〜５ｎｍ程度の表面
酸化膜２０２として存在する（図２（ａ））。(Embodiment 2) An embodiment of the present invention will be described with reference to the process diagram shown in FIG. 2 and the block diagram of the film forming apparatus shown in FIG. GaAs layer 200 and AlGaAs layer 201
In the sample in which the side surface of the laminated structure is exposed, a natural oxide film of GaAs and AlGaAs is usually present as the surface oxide film 202 having a thickness of about 3 to 5 nm (FIG. 2A).
【００１７】上記のような試料を図３に示す成膜装置の
前処理チャンバに投入する。前処理チャンバの真空度は
１Ｅ−４〜１Ｅ−６torr以下の高真空に保持してある。
次いでＨ2 ガス１０sccmを流量制御してラジカル発生源
を経由して前処理チャンバに流す。その後、ｒｆ高周波
電源及びｒｆ印加切換えスイッチを用いてラジカル発生
源にｒｆ高周波を印加する。この間、ラジカル発生源で
Ｈ2 からＨラジカルが生成され、前処理チャンバの試料
表面にＨラジカルが照射される。Ｈラジカル照射処理に
よりＧａＡｓ層２００及びＡｌＧａＡｓ層２０１上の表
面酸化膜２０２は除去される（図２（ｂ））。The above sample is put into the pretreatment chamber of the film forming apparatus shown in FIG. The degree of vacuum of the pretreatment chamber is maintained at a high vacuum of 1E-4 to 1E-6 torr or less.
Then, 10 sccm of H 2 gas is flow controlled to flow into the pretreatment chamber via the radical generation source. After that, the rf high frequency is applied to the radical generation source using the rf high frequency power supply and the rf application changeover switch. During this time, H 2 radicals are generated from H 2 by the radical generation source, and the surface of the sample in the pretreatment chamber is irradiated with H radicals. The surface oxide film 202 on the GaAs layer 200 and the AlGaAs layer 201 is removed by the H radical irradiation treatment (FIG. 2B).
【００１８】続いて、Ｃｌ2ガスを１sccm，Ｆ2ガスを４
sccm各々流量制御してラジカル発生源を経由して前処理
チャンバに流す。これによりＧａＡｓ層２００のエッチ
ングが選択的に進行してＧａＡｓ層２００及びＡｌＧａ
Ａｓ層２０１の積層構造の側面に凹部２０３が形成され
る（図２（ｃ））。Subsequently, Cl 2 gas was added at 1 sccm and F 2 gas was added at 4 sccm.
The flow rate of each sccm is controlled to flow into the pretreatment chamber via the radical generation source. As a result, the GaAs layer 200 is selectively etched, and the GaAs layer 200 and the AlGa layer 200 are etched.
A recess 203 is formed on the side surface of the laminated structure of the As layer 201 (FIG. 2C).
【００１９】その後、試料を図３に示すスパッタチャン
バにゲートバルブ等を介して移動・投入する。スパッタ
チャンバに一定量のＡｒガスを導入した後、ｒｆ高周波
電源及びｒｆ印加切換えスイッチを用いてＳｉＯ2 より
なるスパッタ・ターゲットにｒｆ高周波を印加すること
によりスパッタ成膜を行い、ＧａＡｓ層２００及びＡｌ
ＧａＡｓ層２０１の積層構造の側面上にＳｉＯ2 膜２０
４を堆積する（図２（ｄ））。After that, the sample is moved and put into the sputtering chamber shown in FIG. 3 through a gate valve or the like. After introducing a certain amount of Ar gas into the sputtering chamber, an rf high frequency power source and an rf application changeover switch are used to apply an rf high frequency to a sputtering target made of SiO 2 to form a film by sputtering.
The SiO 2 film 20 is formed on the side surface of the laminated structure of the GaAs layer 201.
4 is deposited (FIG. 2 (d)).
【００２０】本実施例ではＧａＡｓ層２００及びＡｌＧ
ａＡｓ層２０１の積層構造の側面上の表面酸化膜２０２
を除去した後、ＧａＡｓ層２００を選択的にエッチング
して凹部２０３を形成している。このような積層構造側
面の選択的な凹部形成により素子の放熱効果促進或いは
素子構造の細線化が可能となる。In this embodiment, the GaAs layer 200 and AlG are used.
Surface oxide film 202 on the side surface of the laminated structure of aAs layer 201
Then, the GaAs layer 200 is selectively etched to form the recess 203. By selectively forming the concave portions on the side surfaces of the laminated structure, it is possible to accelerate the heat radiation effect of the element or to thin the element structure.
【００２１】本実施例ではＧａＡｓ層２００とＡｌＧａ
Ａｓ層２０１の積層構造に対して適用した例を挙げた
が、他のヘテロ構造を有する材料系に対してもエッチン
グガス・条件を検討することで適用が可能である。In this embodiment, the GaAs layer 200 and AlGa are used.
Although the example applied to the laminated structure of the As layer 201 was given, it can be applied to other material systems having a heterostructure by examining the etching gas and conditions.
【００２２】[0022]
【発明の効果】本発明を用いれば、表面酸化膜及びスパ
ッタ・エッチングによる表面損傷のない化合物半導体層
上に光学薄膜をスパッタ成膜することが可能になる。こ
れにより、発光効率が高く信頼性の優れた光デバイスを
作製できる。According to the present invention, an optical thin film can be sputter-deposited on a surface oxide film and a compound semiconductor layer without surface damage due to sputter etching. As a result, an optical device having high luminous efficiency and excellent reliability can be manufactured.
【図１】本発明の実施例１の工程図。FIG. 1 is a process diagram of a first embodiment of the present invention.
【図２】本発明の実施例２の工程図。FIG. 2 is a process diagram of a second embodiment of the present invention.
【図３】成膜装置のブロック図。FIG. 3 is a block diagram of a film forming apparatus.
１００…ＧａＡｓ層、１０１…表面酸化膜、１０２…Ｓ
ｉＯ2膜。100 ... GaAs layer, 101 ... Surface oxide film, 102 ... S
iO 2 film.
Claims (8)
合物半導体の側面に光学薄膜を形成する工程が、前記化
合物半導体層或いは前記積層構造の前記化合物半導体側
面の表面酸化膜を除去する工程、及び前記表面酸化膜を
除去した前記化合物半導体層或いは前記化合物半導体側
面上に光学薄膜をスパッタ法により堆積する工程を含む
ことを特徴とする光学薄膜の形成方法。1. A step of forming an optical thin film on a surface of a compound semiconductor layer or a side surface of a compound semiconductor having a laminated structure, a step of removing a surface oxide film on the compound semiconductor layer or a compound semiconductor side surface of the laminated structure, A method for forming an optical thin film, comprising a step of depositing an optical thin film on the compound semiconductor layer or the side surface of the compound semiconductor from which the surface oxide film has been removed by a sputtering method.
表面或いは積層構造の前記化合物半導体側面の前記表面
酸化膜を除去する工程が、前記化合物半導体層の表面或
いは積層構造の前記化合物半導体側面に高周波放電によ
り生成したラジカルを照射することにより前記表面酸化
膜を除去する工程を含む光学薄膜の形成方法。2. The method according to claim 1, wherein the step of removing the surface oxide film on the surface of the compound semiconductor layer or on the compound semiconductor side surface of the laminated structure is performed on the surface of the compound semiconductor layer or the compound semiconductor side surface of the laminated structure. A method for forming an optical thin film, comprising a step of removing the surface oxide film by irradiating radicals generated by high frequency discharge.
生成したラジカルが水素ラジカルを含む光学薄膜の形成
方法。3. The method for forming an optical thin film according to claim 2, wherein the radicals generated by the high frequency discharge include hydrogen radicals.
生成したラジカルがハロゲン元素のラジカルを含む光学
薄膜の形成方法。4. The method for forming an optical thin film according to claim 2, wherein the radicals generated by the high frequency discharge include a radical of a halogen element.
半導体側面が第１の化合物半導体と第２の化合物半導体
層とを含み、前記高周波放電に生成したラジカルを照射
することにより前記第１の化合物半導体の側面を前記第
２の化合物半導体の側面より凹ませる工程を含む光学薄
膜の形成方法。5. The compound semiconductor side surface of the stack structure according to claim 2, wherein the compound semiconductor side surface includes a first compound semiconductor and a second compound semiconductor layer, and the first high-frequency discharge is irradiated with radicals to generate the first compound semiconductor. A method for forming an optical thin film, comprising the step of recessing a side surface of a compound semiconductor from a side surface of the second compound semiconductor.
表面或いは積層構造の前記化合物半導体の側面に高周波
放電により生成したラジカルを照射するための処理室及
びスパッタ法により前記化合物半導体層の表面或いは前
記化合物半導体の側面上に光学薄膜を堆積するための処
理室が同一真空室内に配されている光学薄膜の形成装
置。6. The treatment chamber for irradiating the surface of the compound semiconductor layer or the side surface of the compound semiconductor having a laminated structure with radicals generated by high-frequency discharge, and the surface of the compound semiconductor layer by a sputtering method according to claim 2. An apparatus for forming an optical thin film, wherein a processing chamber for depositing an optical thin film on a side surface of the compound semiconductor is arranged in the same vacuum chamber.
表面或いは積層構造の前記化合物半導体の側面に高周波
放電により生成したラジカルを照射するための処理室及
び前記化合物半導体層の表面或いは前記化合物半導体の
側面上に光学薄膜をスパッタ法により堆積するための処
理室がゲート・バルブを介して真空内で分離して配され
ている光学薄膜の形成装置。7. The processing chamber for irradiating the surface of the compound semiconductor layer or the side surface of the compound semiconductor having a laminated structure with radicals generated by high-frequency discharge, and the surface of the compound semiconductor layer or the compound semiconductor according to claim 2. An apparatus for forming an optical thin film, in which a processing chamber for depositing an optical thin film on the side surface of the is separated and arranged in a vacuum through a gate valve.
を生成するための高周波電源とスパッタ成膜を行うため
の高周波電源が兼用である光学薄膜の形成装置。8. The optical thin film forming apparatus according to claim 6, wherein the high frequency power source for generating the radicals and the high frequency power source for performing the sputtering film formation are combined.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18808394A JPH0856053A (en) | 1994-08-10 | 1994-08-10 | Forming method of optical thin film and its forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18808394A JPH0856053A (en) | 1994-08-10 | 1994-08-10 | Forming method of optical thin film and its forming equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0856053A true JPH0856053A (en) | 1996-02-27 |
Family
ID=16217409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18808394A Pending JPH0856053A (en) | 1994-08-10 | 1994-08-10 | Forming method of optical thin film and its forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0856053A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017115792A1 (en) * | 2015-12-28 | 2017-07-06 | 古河電気工業株式会社 | Method for manufacturing semiconductor laser element |
-
1994
- 1994-08-10 JP JP18808394A patent/JPH0856053A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017115792A1 (en) * | 2015-12-28 | 2017-07-06 | 古河電気工業株式会社 | Method for manufacturing semiconductor laser element |
| JPWO2017115792A1 (en) * | 2015-12-28 | 2018-10-25 | 古河電気工業株式会社 | Manufacturing method of semiconductor laser device |
| US10608407B2 (en) | 2015-12-28 | 2020-03-31 | Furukawa Electric Co., Ltd. | Method of manufacturing semiconductor laser element |
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