JPH0855828A - Cleaning method and apparatus - Google Patents

Cleaning method and apparatus

Info

Publication number
JPH0855828A
JPH0855828A JP6191407A JP19140794A JPH0855828A JP H0855828 A JPH0855828 A JP H0855828A JP 6191407 A JP6191407 A JP 6191407A JP 19140794 A JP19140794 A JP 19140794A JP H0855828 A JPH0855828 A JP H0855828A
Authority
JP
Japan
Prior art keywords
electrodes
cleaning
electrode
pair
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6191407A
Other languages
Japanese (ja)
Other versions
JP3171015B2 (en
Inventor
Hiroshi Haji
宏 土師
Isamu Morisako
勇 森迫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19140794A priority Critical patent/JP3171015B2/en
Priority to US08/427,218 priority patent/US5676856A/en
Publication of JPH0855828A publication Critical patent/JPH0855828A/en
Application granted granted Critical
Publication of JP3171015B2 publication Critical patent/JP3171015B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10161Shape being a cuboid with a rectangular active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To clean only a desired area of an object such as an electrode of a substrate or a chip locally and simply, by generating a discharge between a pair of electrodes which has been moved in close to the object of cleaning, and by removing a contaminant on the object of cleaning. CONSTITUTION:A pair of electrodes 10, 11 is moved in close to an electrode 4. While by the operation of a gas feeding device an inert gas or reduction gas is jetted from a nozzle 15 to the electrode 4, a spark 17 is generated between the electrodes 10, 11 by the operation of a discharging device. Thereby, the spark 17 strikes against a contaminant 16, and it is removed from the electrode 4 by the heat of the spark 17. Since the electrode 4 to be the object of cleaning is in the state wherein it is floated electrically from a pair of electrodes 10, 11, no current flows through a chip 3, and the chip 3 is not damaged. Also, since no current is made to flow through the object of cleaning, no obstacle is generated even though the object is an insulator.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、プリント基板やリード
フレームなどの基板や、基板に搭載されたチップなどの
ワークの電極などのクリーニング対象をスポット的にク
リーニングするクリーニング方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for spot-cleaning a substrate such as a printed circuit board or a lead frame, or an electrode of a work such as a chip mounted on the substrate.

【0002】[0002]

【従来の技術】基板の電極とこの基板に搭載されたチッ
プの電極をワイヤで接続するワイヤボンディングにおい
て、基板やチップの表面の電極が酸化膜や有機物質(例
えば、フェノール、エポキシ)などの汚染物により汚れ
ているとボンディング不良が生じやすい。そこで本出願
人は、ワイヤボンディングに先立って基板やチップの表
面の電極をクリーニングするプラズマクリーニング装置
を提案した(特開平4−123430号公報)。
2. Description of the Related Art In wire bonding in which an electrode on a substrate and an electrode on a chip mounted on this substrate are connected by a wire, the electrode on the surface of the substrate or the chip is contaminated with an oxide film or an organic substance (for example, phenol or epoxy). If it is soiled with an object, defective bonding is likely to occur. Therefore, the present applicant has proposed a plasma cleaning device that cleans the electrodes on the surface of the substrate and the chip prior to wire bonding (Japanese Patent Laid-Open No. 4-123430).

【0003】このプラズマクリーニング装置は、チップ
が搭載された基板をケーシングの内部に収納し、ケーシ
ング内にプラズマを発生させることにより、電極の表面
にイオンを衝突させて汚染物をクリーニング対象から取
り除くものであり、多数枚の基板を作業性よくクリーニ
ングできる長所を有している。
In this plasma cleaning apparatus, a substrate on which chips are mounted is housed in a casing, and plasma is generated in the casing so that ions are made to collide with the surface of an electrode to remove contaminants from a cleaning target. Therefore, it has an advantage that a large number of substrates can be cleaned with good workability.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記従来
のプラズマクリーニング装置は、クリーニング対象とし
ての電極だけでなく、基板やチップの表面全体にイオン
が衝突するため、電極以外の基板やチップの表面が傷つ
きやすいという問題点があった。またこのプラズマクリ
ーニング装置はかなり大型設備であって大きな設置スペ
ースを必要とし、また相当高価なものであった。
However, in the above-mentioned conventional plasma cleaning apparatus, ions collide not only with the electrode to be cleaned but also with the entire surface of the substrate or chip, so that the surface of the substrate or chip other than the electrode is damaged. There was a problem that it was easy. Further, this plasma cleaning device is a fairly large facility, requires a large installation space, and is considerably expensive.

【0005】そこで本発明は、基板やチップの電極など
のクリーニング対象のみを局所的に簡単にクリーニング
できるクリーニング方法を提供することを目的とする。
Therefore, an object of the present invention is to provide a cleaning method capable of locally and easily cleaning only a cleaning target such as an electrode of a substrate or a chip.

【0006】[0006]

【課題を解決するための手段】本発明のクリーニング方
法は、一対の電極をクリーニング対象に近接させ、一対
の電極間において放電させることにより、クリーニング
対象に付着した汚染物を取り除くものである。
The cleaning method of the present invention removes contaminants adhering to a cleaning object by bringing a pair of electrodes close to the cleaning object and discharging between the pair of electrodes.

【0007】[0007]

【作用】上記構成において、一対の電極間における放電
により、クリーニング対象に付着した酸化物や有機物質
などが取り除かれる。
In the above structure, the discharge between the pair of electrodes removes oxides, organic substances and the like adhering to the cleaning object.

【0008】[0008]

【実施例】次に図面を参照しながら本発明の実施例を説
明する。図1は本発明の一実施例におけるクリーニング
装置の斜視図、図2(a)〜(c)本発明の一実施例に
おけるクリーニング装置の動作説明図である。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a perspective view of a cleaning device according to an embodiment of the present invention, and FIGS. 2A to 2C are operation explanatory diagrams of the cleaning device according to the embodiment of the present invention.

【0009】図1において、1は基板としてのリードフ
レーム2を位置決めする位置決め部、3はリードフレー
ム2に搭載されたチップであり、後工程においてチップ
3の電極4と、リードフレーム2のインナーリード5に
ワンヤボンディングが行われる。ここで本実施例では、
電極4とインナーリード5をクリーニング対象とする。
In FIG. 1, 1 is a positioning portion for positioning a lead frame 2 as a substrate, 3 is a chip mounted on the lead frame 2, and electrodes 4 of the chip 3 and inner leads of the lead frame 2 are used in a later step. One-way bonding is carried out on 5. Here, in this embodiment,
The electrode 4 and the inner lead 5 are to be cleaned.

【0010】さて6はアーム7を上下に揺動させる駆動
ユニットであり、駆動ユニット6はXテーブル9及びY
テーブル8上に載置され、位置決め部1上のリードフレ
ーム2に対しXY方向に移動できるようになっている。
本実施例では、駆動ユニット6、Yテーブル8、Xテー
ブル9が移動手段に対応する。なおこの駆動ユニット6
は例えば特開平4−291735号公報に記載された公
知のワイヤボンディング装置の揺動機構と同様のもので
あり、詳細な説明は省略する。アーム7の先端部には、
下向きに一対の針状の電極10,11が取付けられ、こ
れらの電極10,11の一方には放電装置12(スパー
ク発生手段)の+極が、他方には−極が配線13を介し
て電気的に接続される。即ち、アーム7を下向きに揺動
させ放電装置12を作動させれば、一対の電極10,1
1の下端部間において放電(例えば2000V,30m
A,3mSec程度)させることができる。ここで、ク
リーニング対象としての電極4あるいはインナーリード
5は、上記+極、−極のいずれにも接続されず、これら
+,−極から電気的に浮いた状態にある。
A driving unit 6 swings the arm 7 up and down. The driving unit 6 includes an X table 9 and a Y table.
It is placed on the table 8 and can be moved in the XY directions with respect to the lead frame 2 on the positioning portion 1.
In this embodiment, the drive unit 6, the Y table 8 and the X table 9 correspond to the moving means. This drive unit 6
Is the same as the swing mechanism of the known wire bonding apparatus described in, for example, Japanese Patent Laid-Open No. 4-291735, and detailed description thereof will be omitted. At the tip of the arm 7,
A pair of needle-shaped electrodes 10 and 11 are attached downward, and one of the electrodes 10 and 11 has a positive electrode of a discharge device 12 (spark generating means) and the other has a negative electrode electrically connected via a wiring 13. Connected. That is, when the arm 7 is swung downward and the discharge device 12 is operated, the pair of electrodes 10, 1
Discharge between the lower ends of 1 (for example, 2000V, 30m
A, about 3 mSec). Here, the electrode 4 or the inner lead 5 to be cleaned is not connected to any of the + pole and the − pole, and is in an electrically floating state from these + and − poles.

【0011】また14は、窒素ガスなどの不活性ガスも
しくは不活性ガスに水素ガスを混入した還元ガスを放出
するガス供給装置であり、15はアーム7の先端部に取
付けられ、かつ先端部が一対の電極10,11の先端部
間に臨み、ガス供給装置14に接続されるノズルであ
る。したがって、ガス供給装置14を作動させると、ノ
ズル15から不活性ガス又は還元性ガスを噴射させ、一
対の電極10,11の近傍に存在する汚染物を吹き飛ば
すことができるとともに、不活性もしくは還元雰囲気を
形成できる。
Reference numeral 14 is a gas supply device for releasing an inert gas such as nitrogen gas or a reducing gas in which hydrogen gas is mixed with an inert gas, and 15 is attached to the tip of the arm 7 and has a tip. It is a nozzle that is connected between the gas supply device 14 and faces the tip portions of the pair of electrodes 10 and 11. Therefore, when the gas supply device 14 is operated, an inert gas or a reducing gas can be jetted from the nozzle 15 to blow away the contaminants existing in the vicinity of the pair of electrodes 10 and 11, and also an inert or reducing atmosphere. Can be formed.

【0012】次に図2を参照しながら、本実施例のクリ
ーニング方法について説明する。まずクリーニング方法
を実施する前に、図2(a)に示すように、電極4に汚
染物16が付着していたものとする。そして、Xテーブ
ル9、Yテーブル8を駆動して、一対の電極10,11
を電極4の上方に位置させ、駆動ユニット6を作動し、
アーム7を下降させ、電極4に近接させる。
Next, the cleaning method of this embodiment will be described with reference to FIG. First, it is assumed that the contaminant 16 has adhered to the electrode 4 as shown in FIG. 2A before the cleaning method is performed. Then, the X table 9 and the Y table 8 are driven to drive the pair of electrodes 10, 11
Position above the electrode 4 to activate the drive unit 6,
The arm 7 is lowered and brought close to the electrode 4.

【0013】そして図2(b)に示すように、ガス供給
装置14を作動して、ノズル15から不活性ガスもしく
は還元ガスを電極4に向けて噴射しながら、放電装置1
2を作動して一対の電極10,11間にスパーク17を
発生させる。これにより、スパーク17が汚染物16に
当たり、スパーク17の熱によって図2(c)に示すよ
うに汚染物16が電極4から取除かれる。電極4のクリ
ーニングが完了したら、駆動ユニット6、Yテーブル
8、Xテーブル9を駆動して次の電極4又はインナーリ
ード5の上方に一対の電極10,11を近接させ、スパ
ークを発生させて作業を続ける。インナーリード5をク
リーニングする場合は、ワイヤが接合される部分のみ局
所的にクリーニングする。
Then, as shown in FIG. 2 (b), the gas supply device 14 is operated to inject the inert gas or the reducing gas from the nozzle 15 toward the electrode 4, and the discharge device 1
2 is operated to generate a spark 17 between the pair of electrodes 10 and 11. As a result, the spark 17 hits the contaminant 16, and the heat of the spark 17 removes the contaminant 16 from the electrode 4 as shown in FIG. When the cleaning of the electrode 4 is completed, the driving unit 6, the Y table 8 and the X table 9 are driven to bring the pair of electrodes 10 and 11 close to the next electrode 4 or the inner lead 5 to generate a spark and work. Continue. When cleaning the inner lead 5, only the portion where the wire is joined is locally cleaned.

【0014】ここで上述したように、クリーニング対象
としての電極4は、一対の電極10,11から電気的に
浮いた状態にあるので、チップ3に電流が流れることは
なく、チップ3はダメージを受けない。また本実施例の
クリーニング方法では、クリーニング対象自体に電流を
流すものではないため、クリーニング対象が絶縁性を有
するものであっても何ら支障なく、クリーニングを行う
ことができる。
As described above, since the electrode 4 to be cleaned is in an electrically floating state from the pair of electrodes 10 and 11, no current flows through the chip 3 and the chip 3 is damaged. I do not receive it. Further, in the cleaning method of the present embodiment, since no current is passed through the cleaning target itself, it is possible to perform cleaning without any trouble even if the cleaning target has an insulating property.

【0015】[0015]

【発明の効果】本発明のクリーニング方法は、一対の電
極をクリーニング対象に近接させ、一対の電極間におい
て放電させることにより、クリーニング対象に付着した
汚染物を取り除くものであるから、クリーニング対象の
みを簡単にクリーニングするので、チップにダメージを
与えることなくクリーニングを行うことができる。
According to the cleaning method of the present invention, the pair of electrodes are brought close to the object to be cleaned and electric discharge is made between the pair of electrodes to remove the contaminants attached to the object to be cleaned. Since it is easily cleaned, it can be cleaned without damaging the chip.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるクリーニング装置の
斜視図
FIG. 1 is a perspective view of a cleaning device according to an embodiment of the present invention.

【図2】(a)本発明の一実施例におけるクリーニング
装置の動作説明図 (b)本発明の一実施例におけるクリーニング装置の動
作説明図 (c)本発明の一実施例におけるクリーニング装置の動
作説明図
FIG. 2A is an operation explanatory diagram of the cleaning device according to the embodiment of the present invention. FIG. 2B is an operation explanatory diagram of the cleaning device according to the embodiment of the present invention. Illustration

【符号の説明】[Explanation of symbols]

4 電極 5 インナーリード 10 一対の電極 11 一対の電極 16 汚染物 4 electrodes 5 inner leads 10 pair of electrodes 11 pair of electrodes 16 contaminants

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】一対の電極をクリーニング対象に近接さ
せ、前記一対の電極間において放電させることにより、
クリーニング対象に付着した汚染物を取り除くことを特
徴とするクリーニング方法。
1. A pair of electrodes are brought close to an object to be cleaned, and a discharge is generated between the pair of electrodes,
A cleaning method characterized by removing contaminants adhering to a cleaning target.
【請求項2】前記放電時に、クリーニング対象に向けて
ノズルから不活性ガスもしくは還元ガスを吹付けること
を特徴とする請求項1記載のクリーニング方法。
2. The cleaning method according to claim 1, wherein an inert gas or a reducing gas is sprayed from a nozzle toward the object to be cleaned during the discharging.
【請求項3】針状の一対の電極と前記電極間にスパーク
を発生させるスパーク発生手段と前記電極をクリーニン
グ対象に対して相対的に移動させる移動手段を備えたこ
とを特徴とするクリーニング装置。
3. A cleaning device comprising: a pair of needle-shaped electrodes, a spark generating means for generating a spark between the electrodes, and a moving means for moving the electrodes relative to an object to be cleaned.
【請求項4】クリーニング対象へ不活性ガスもしくは還
元性ガスを吹付けるノズルを備えたことを特徴とする請
求項3記載のクリーニング装置。
4. The cleaning device according to claim 3, further comprising a nozzle for spraying an inert gas or a reducing gas onto a cleaning target.
JP19140794A 1994-04-25 1994-08-15 Cleaning method and cleaning device Expired - Fee Related JP3171015B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19140794A JP3171015B2 (en) 1994-08-15 1994-08-15 Cleaning method and cleaning device
US08/427,218 US5676856A (en) 1994-04-25 1995-04-24 Electric discharge apparatus for cleaning electrode on workpiece and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19140794A JP3171015B2 (en) 1994-08-15 1994-08-15 Cleaning method and cleaning device

Publications (2)

Publication Number Publication Date
JPH0855828A true JPH0855828A (en) 1996-02-27
JP3171015B2 JP3171015B2 (en) 2001-05-28

Family

ID=16274097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19140794A Expired - Fee Related JP3171015B2 (en) 1994-04-25 1994-08-15 Cleaning method and cleaning device

Country Status (1)

Country Link
JP (1) JP3171015B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713389B2 (en) 1997-10-14 2004-03-30 Stuart Speakman Method of forming an electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713389B2 (en) 1997-10-14 2004-03-30 Stuart Speakman Method of forming an electronic device

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