JPH0845891A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To provide a method for the manufacture of semiconductor devices wherein conduction failure in electrical conduction holes, formed in a layer insulating film, is prevented, and thus highly reliable devices are obtained. CONSTITUTION:A process wherein a multilayer interconnection structure is formed on a semiconductor substrate 1, includes a step wherein electrical conduction holes are formed in a layer insulating film, and then the substrate is washed with water and dried. In this step the substrate 1, held on a rotating vacuum chuck 2, is sprayed with alcohol 4 through a nozzle 3, and moisture collecting in the conduction holes is replaced with the alcohol 4. Further, the alcohol is volatilized while the substrate is being spun. Thus moisture in the conduction holes is completely removed. This resolves a problem of the occurrence of electrical conduction failure due to insufficient drying and removal of moisture in the conduction holes.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to manufacturing a semiconductor device having a structure having a multilayer wiring structure on a substrate.

[0002]

2. Description of the Related Art In the case of manufacturing a semiconductor device, when a multilayer wiring structure is realized on a semiconductor substrate, an electric conduction hole is formed in an interlayer insulating film by a dry etching method using a reactive ion species. Is formed. At this time, the unnecessary resist is removed by an oxygen plasma device (asher) or a chemical treatment. Conventionally, as the chemical, an organic chemical or an inorganic anhydrous acid such as anhydrous nitric acid has been widely used. However, these chemicals cannot be used as a fluororesin carrier or the like because of their chemical nature that they are easily impregnated in the resin, and instead, they have been limited to quartz carriers and the like that are not easily impregnated in the resin. Therefore, when a quartz carrier is used, the drying method is
(Isopropyl alcohol) A steam dryer or a similar drying method must be used. However, in the conventional IPA dryer, it is difficult to dry and remove the water accumulated in the above-mentioned electrical conduction hole, and poor drying is likely to occur, resulting in a very high possibility of inducing poor electrical conduction.

[0003]

As described above, the conventional method for manufacturing a semiconductor device has a step of forming an electrically conductive hole in an interlayer insulating film when a multilayer wiring structure is realized on a semiconductor substrate. In the post-treatment process after opening the electrical conduction hole, there is a problem that electrical conduction failure occurs due to insufficient drying and removal of water accumulated in the conduction hole. An object of the present invention is to solve this problem and to provide a method for manufacturing a semiconductor device, which can prevent conduction failure of an electrical conduction hole formed in an interlayer insulating film and obtain a highly reliable device.

[0004]

The above objects of the present invention can be achieved by the following constitutions. That is, after forming an electrical conduction hole in an interlayer insulating film when realizing a multilayer wiring structure on a substrate, unnecessary resist is removed by using an oxygen plasma device or a chemical solution, or a combination method thereof. At this time, in a step having at least the final step of washing and drying the electrical conduction hole, after the washing, a method for manufacturing a semiconductor device in which an alcohol chemical solution that replaces water while rotating the substrate is sprayed onto the substrate, or the substrate At least when the unnecessary resist is removed using an oxygen plasma device or a chemical solution or a combination thereof after opening an electrical conduction hole in the interlayer insulating film when realizing the multilayer wiring structure above. In the process including washing and drying treatment at the final stage of forming the electrical conduction hole,
This is a method of manufacturing a semiconductor device, in which after washing with water, a substrate is placed in a chemical solution bath which has been previously filled with an alcohol chemical solution that replaces moisture, and the moisture is replaced with the chemical solution in the chemical solution.

In the method for manufacturing a semiconductor device of the present invention, the chemical resistance is monitored while the deterioration of the alcohol chemical is monitored by measuring the specific resistance of the alcohol chemical, and the substrate is swung in a chemical bath. It is desirable to adopt that. Further, the present invention may employ any one of the methods for manufacturing a semiconductor device described above, in which the water is replaced with an alcohol chemical solution and then drying is performed under reduced pressure. As the alcohol chemical solution, an alcohol such as ethyl alcohol or a mixed chemical solution of the alcohol and acetone can be used.

[0006]

Operation: In the step of washing with water and drying after opening an electrical conduction hole in an interlayer insulating film when a multilayer wiring structure is realized on a semiconductor substrate, water accumulated in the conduction hole is replaced with an alcohol chemical solution. Then, by volatilizing and removing the alcohol chemical liquid, the water accumulated in the conduction hole can be completely removed. Thus, the problem of electrical conduction failure due to insufficient dry removal of water accumulated in the conduction hole is solved, and the conduction failure of the electrical conduction hole formed in the interlayer insulating film is prevented, and reliability is improved. It is possible to manufacture a semiconductor device capable of obtaining a highly reliable device.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Each of the following examples relates to a post-treatment process after opening an electrically conductive hole in an interlayer insulating film when a multilayer wiring structure is realized on a semiconductor substrate by using a conventional method. However, the present invention is not limited to the examples described below.

Example 1 In this example, after electrically conducting holes were opened by using a conventional method, an unnecessary resist (not shown) was used with an oxygen plasma device or a chemical solution, or a combination method thereof. At the final stage, at least in the final step, the alcohol is sprayed while rotating the substrate to volatilize it. FIG. 1 shows a schematic view of the apparatus of this embodiment. After forming an electrical conduction hole (not shown) in the interlayer insulating film on the semiconductor substrate 1, the substrate 1 is fixed on a vacuum chuck 2 for rotating the substrate 1, and alcohol 4 is sprayed from a nozzle 3 to form a substrate. Spray toward 1. When the alcohol 4 is sprayed onto the substrate 1, the vacuum chuck 2 is rotated at a low speed of about 500 rpm, and at the time of drying it is rotated at a high speed of about 3000 rpm.
In this way, the water inside the electrical conduction hole formed in the interlayer insulating film on the semiconductor substrate 1 can be dissipated together with the alcohol 4. Further, when alcohol 4 is atomized from the nozzle 3 and sprayed toward the substrate 1, and after a while, the moisture in the electrical conduction hole is replaced with the alcohol 4, reduced pressure drying or reduced pressure heat drying treatment can be performed.

Example 2 In this example, after electrically conducting holes (not shown) were opened in the interlayer insulating film on the semiconductor substrate 1, the substrate 1 was previously made of alcohol and acetone as shown in FIG. Immerse in the chemical bath 5 filled with the alcohol chemical 6. While being immersed in the chemical bath 5, the water in the electrical conduction hole is replaced with the alcohol chemical 6. After that, when it is dried by a normal alcohol vapor dryer (not shown), no water remains in the electrical conduction hole. When the semiconductor substrate 1 is dipped in the alcohol chemical liquid 6, the substrate 1 is rocked or the alcohol chemical liquid 6 is stirred to further enhance the effect of replacing the water in the electrical conduction hole with the alcohol chemical liquid 6. Further, by measuring the specific resistance value of the alcohol chemical liquid 6 using the chemical liquid resistivity meter 8, the standard of the degree of substitution of water with the alcohol chemical liquid 6 can be known. Another feature of this embodiment is that the substrate 1 can be processed in a batch manner, and thus the throughput is high.

Example 3 In this example shown in FIG. 3, an electrical conduction hole (not shown) is formed in the interlayer insulating film on the semiconductor substrate 1 in the same manner as in the procedure of Example 2.
After opening the substrate 1, the substrate 1 is immersed in a chemical bath 5 filled with an alcohol chemical in advance to replace the water in the electrical conduction holes, and then most of the alcohol chemical in the chemical bath 5 is taken out, and then the substrate 1 The drying method is characterized in that the chemical solution bath 5 containing the is dried under reduced pressure. The reduced-pressure drying device 9 includes an electric heater 10 and a lamp heater 11, and exhausts air from an exhaust port 12 to reduce the pressure inside the drying device 9 to dry it. At this time, the heating effect is further increased by heating the electric heater or heating the lamp together. An IPA inlet 13 is provided, and IPA vapor is supplied into the drying device 9 to dry the semiconductor substrate 1.

[0011]

According to the present invention, in the process of realizing a multilayer wiring structure on a substrate, electrical conduction defects caused by drying defects in the cleaning process performed when opening the electrical conduction holes are suppressed. Therefore, a semiconductor device without deterioration of conductivity can be obtained.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of a second embodiment of the present invention.

FIG. 3 is an explanatory diagram of Embodiment 3 of the present invention.

[Explanation of symbols]

1 ... Semiconductor substrate, 2 ... Vacuum chuck, 3 ... Nozzle, 4 ...
Alcohol, 5 ... chemical bath, 6 ... alcohol chemical solution, 8 ...
Chemical liquid resistivity meter, 9 ... Vacuum drying device, 10 ... Electric heater,
11 ... Lamp heater, 12 ... Exhaust port, 13 ... IPA inlet port

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display area H01L 21/3213

Claims (5)

[Claims] 1. A method of removing an unnecessary resist by using an oxygen plasma device or a chemical solution after opening an electrically conductive hole in an interlayer insulating film when a multilayer wiring structure is realized on a substrate, or a combination method thereof. The semiconductor characterized by spraying on the substrate an alcohol chemical solution that replaces water while rotating the substrate after rinsing with water in a step including rinsing / drying treatment at least in the final stage of forming an electrical conduction hole when removing by Device manufacturing method. 2. A resist which is no longer needed after an electrically conductive hole is opened in an interlayer insulating film when a multilayer wiring structure is realized on a substrate, using an oxygen plasma device or a chemical solution, or a combination method thereof. When removing by, in a step having at least the final step of washing and drying the electrical conduction hole, after washing, put the substrate in the chemical bath pre-filled with alcohol chemical solution to replace water,
A method of manufacturing a semiconductor device, characterized in that water is replaced with chemical liquid in the chemical liquid. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the chemical liquid management is performed while monitoring the deterioration of the alcohol chemical liquid by measuring the specific resistance of the alcohol chemical liquid. 4. The method for manufacturing a semiconductor device according to claim 2, wherein the substrate is swung in a chemical bath. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the drying is performed under reduced pressure after the water content is replaced with the alcohol chemical solution.