JP2004095642A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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JP2004095642A
JP2004095642A JP2002251295A JP2002251295A JP2004095642A JP 2004095642 A JP2004095642 A JP 2004095642A JP 2002251295 A JP2002251295 A JP 2002251295A JP 2002251295 A JP2002251295 A JP 2002251295A JP 2004095642 A JP2004095642 A JP 2004095642A
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substrate
semiconductor device
pure water
manufacturing
chemical solution
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Japanese (ja)
Inventor
Kazuo Takano
高野　加津雄
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device in which no alcohol is used at the time of removing a polymer by using an amine-based organic removing solution while the reliability of a metal material is maintained, and to provide a semiconductor device. <P>SOLUTION: In the method of manufacturing semiconductor device, the amine-based organic removing solution (R-NH<SB>2</SB>) is applied by spinning it to the surface of a substrate 20 to be cleaned on which a side-wall polymer is formed (step S11). After a prescribed time has elapsed, the solution (R-NH<SB>2</SB>) is shaken off by utilizing a centrifugal force by rotating the substrate 20 at a high speed (step S12). After the step S12, the solution and a reactant are left on the substrate 20 though their amounts are extremely small. Then pure water DIW is supplied to the substrate 20 while the substrate 20 is rotated by changing a rotational speed from a low speed to a high speed (step S13). Thereafter, the pure water DIW is shaken off from the substrate 20 by utilizing a centrifugal force by rotating the substrate 20 at a high speed, and the substrate 20 is dried (step S14). <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体装置製造に係り、特に半導体基板または他の加工品に付着した有機成分及び金属成分を含む不要物を除去する半導体装置の製造方法及びこれを利用して実現される半導体装置に関する。
【０００２】
【従来の技術】
ＬＳＩの微細化に伴って、金属配線の幅は縮小され、洗浄工程に発生する僅かな腐食の影響も無視できなくなっている。例えば、ドライエッチングとアッシング処理を完了した半導体基板上のパターン側壁には有機成分と金属成分が含有される側壁ポリマーが形成されている。
【０００３】
図５（ａ），（ｂ）は、層間絶縁膜上の金属配線パターンを示す概観図である。半導体基板５１の層間絶縁膜５２上にフォトリソグラフィ技術、ドライエッチング技術を経て形成された金属の配線パターン５３が形成されている。レジストパターン（破線）をアッシング処理によって除去すると、図５（ａ）に示すように、配線パターン５３の側壁には有機成分と金属成分が含有される側壁ポリマー５４が形成されている。この側壁ポリマー５４を除去するためには、洗浄工程としてアミン系の有機物剥離液による処理を伴う。
【０００４】
上記洗浄工程の順序は次のようである。アミン系の有機物剥離液への浸漬→アルコール処理→水洗処理→乾燥処理となる。上記のうちアルコール処理は、剥離液に浸漬された基板をＩＰＡ（イソプロピルアルコール）やエタノール等のアルコール液に浸漬して有機アミンを置換する役割を果たす。これは、アミン系の有機物剥離液が水と混ざるとアルカリ性となり、影響が過ぎると金属配線部分をも著しく腐食させる危険性があるからである。図５（ｂ）において、破線は配線パターン５３に対し上記のような腐食が発生し、予想外に細線化した場合の状態を示す。
【０００５】
【発明が解決しようとする課題】
上記方法によれば、金属系の配線の信頼性を低下させないように、アミン系の有機物剥離液による基板浸漬処理後には、アルコール処理が必ず行われていた。しかし、このアルコール処理により、ランニングコストが上昇するという懸念がある。
【０００６】
本発明は、上記のような事情を考慮してなされたもので、アミン系の有機物剥離液を使用したポリマー除去について、金属系材料の信頼性を維持しつつアルコールを不使用とする半導体装置の製造方法及び半導体装置を提供しようとするものである。
【０００７】
【課題を解決するための手段】
本発明の［請求項１］に係る半導体装置の製造方法は、
少なくとも有機成分及び金属成分の含有する不要物が付着した基板に対し、前記不要物を剥離する活性種の入った薬液を塗布する工程と、
前記基板を回転させる遠心力で前記薬液を振り切る工程と、
前記基板を回転させつつ純水を供給し洗浄する工程と、
前記基板を回転させる遠心力で前記純水を振り切り乾燥させる工程と、
を具備したことを特徴とする。
【０００８】
上記本発明に係る半導体装置の製造方法によれば、薬液が一旦振り切られ微量になったうえで純水による洗浄に移行する。これにより、過剰反応することなく不要物以外の金属系の腐食が促進されることはない。
【０００９】
本発明の［請求項２］に係る半導体装置の製造方法は、［請求項１］に従属され、
前記基板を回転させる回転数は低速、高速を交互に制御することを特徴とする。これにより洗浄力の向上を図る。
【００１０】
本発明の［請求項３］に係る半導体装置の製造方法は、
少なくとも有機成分及び金属成分の含有する不要物が付着した基板に対し、前記不要物を剥離する活性種の入った薬液を塗布する工程と、
前記基板に所定量の純水を噴霧状に与える工程と、
前記基板に純水を供給し洗浄する工程と、
前記基板を回転させる遠心力で前記純水を振り切り乾燥させる工程と、
を具備したことを特徴とする。
【００１１】
上記本発明に係る半導体装置の製造方法によれば、薬液塗布後、純水が大量に与えられるのではなく噴霧状に与えられることにより、薬液と水の反応は微量に終わる。そのうえで純水による実質的な洗浄に移行する。これにより、過剰反応することなく不要物以外の金属系の腐食が促進されることはない。
【００１２】
本発明の［請求項４］に係る半導体装置の製造方法は、［請求項３］に従属され、
前記基板を乾燥させる工程は基板の回転を伴い遠心力で純水を振り切ることを特徴とする。
【００１３】
本発明の［請求項５］に係る半導体装置は、［請求項１］〜［請求項４］のいずれかの半導体装置の製造方法を用いて形成されることを特徴とする。信頼性が確保された、より低コストでの半導体装置の提供が実現される。
【００１４】
【発明の実施の形態】
図１は、本発明の第１実施形態に係る半導体装置の製造方法の要部を示す流れ図である。また、図２（ａ）〜（ｄ）は、枚葉式スピン方式の洗浄乾燥装置を一例として利用しこの第１実施形態の方法を説明する概略図である。例えば、ドライエッチングとアッシング処理を完了した半導体基板上のパターン側壁には有機成分と金属成分が含有される不要物、側壁ポリマーが形成される（図５の５４参照）。この側壁ポリマーを除去するため、この実施形態では次のようにする。
【００１５】
まず、図１の処理Ｓ１１、図２（ａ）に示すように、側壁ポリマーの形成された被洗浄基板２０上にアミン系の有機物剥離液（Ｒ−ＮＨ２）を塗布する。ここでは、図２（ａ）に示すように、処理室の支持台２１に保持された被洗浄基板２０を低速回転（１００ｒｐｍ前後）させ、ノズル２３から薬液（Ｒ−ＮＨ２）を所定量供給するスピン塗布とする。
【００１６】
所定次間経過後、図１の処理Ｓ１２、図２（ｂ）に示すように、被洗浄基板２０を高速に回転させ、その遠心力で薬液（Ｒ−ＮＨ２）を振り切る。図２（ｂ）に示すように、被洗浄基板２０を高速回転（最終的には４０００ｒｐｍ以上）させることにより、基板上には微量ではあるが薬液残留、反応物残留が認められる。
【００１７】
次に、図１の処理Ｓ１３、図２（ｃ）に示すように、薬液を振り切った被洗浄基板２０に純水ＤＩＷを供給する。ここでは、図２（ｃ）に示すように、ノズル２４から純水ＤＩＷを所定量供給しつつ、被洗浄基板２０を比較的低速回転（１０００ｒｐｍ前後）と高速回転（４０００ｒｐｍ前後）の交互制御することにより純水洗浄する。
【００１８】
次に、図１の処理Ｓ１４、図２（ｄ）に示すように、被洗浄基板２０を高速回転（４０００ｒｐｍ以上）させることにより、遠心力で純水ＤＩＷを振り切り、乾燥させる。
【００１９】
上記第１実施形態の方法によれば、図１の処理Ｓ１２、図２（ｂ）に示すように、薬液（Ｒ−ＮＨ２）が一旦振り切られ、微量になったうえで純水による洗浄に移行する。これにより、基板２０は、過剰反応することなく不要なポリマー以外の必要な配線など金属系の腐食が促進されることはない。これにより、アルコール処理を省いても高信頼性のポリマー除去が実現される。また、上記薬液を一旦振り切ることにより除去するべきポリマー剥離の均一性が得られる。
【００２０】
図３は、本発明の第２実施形態に係る半導体装置の製造方法の要部を示す流れ図である。また、図４（ａ）〜（ｄ）は、バッチ式の洗浄乾燥装置を一例として利用しこの第２実施形態の方法を説明する概略図である。例えば、ドライエッチングとアッシング処理を完了した半導体基板上のパターン側壁には有機成分と金属成分が含有される不要物、側壁ポリマーが形成される（図５の５４参照）。この側壁ポリマーを除去するため、この実施形態では次のようにする。
【００２１】
まず、図３の処理Ｓ３１、図４（ａ）に示すように、側壁ポリマーの形成された被洗浄基板４０をアミン系の有機物剥離液（Ｒ−ＮＨ２）に浸漬する。これにより、被洗浄基板４０への薬液塗布がなされる。ここでは、図４（ａ）に示すように、専用のカセット４２に納められた複数の被洗浄基板４０を処理槽４１内に取り込み、薬液（Ｒ−ＮＨ２）で満たす。
【００２２】
所定次間経過後、図３の処理Ｓ３２、図４（ｂ）に示すように、処理槽４１内の薬液（Ｒ−ＮＨ２）を槽４１外に排出し、その後、槽４１内の被洗浄基板４０に対し所定量の純水ＤＩＷを噴霧状に与える（例えば時間で制御する）。このとき、基板は低速回転を伴うことが望ましい。この噴霧供給により、複数の基板４０に対して均一的な薬液と水の微量の反応が達成される。
【００２３】
所定時間経過後、図３の処理Ｓ３３、図４（ｃ）に示すように、被洗浄基板４０に対し純水ＤＩＷを実質的な水洗目的で供給する。ここでは、図４（ｃ）に示すように、槽４１内に純水ＤＩＷを満たす。被洗浄基板４０は低速回転を伴いつつ水洗処理してもよい。
【００２４】
次に、図３の処理Ｓ３４、図４（ｄ）に示すように、槽４１内の洗浄液を排出し、被洗浄基板２０を高速回転させることにより、遠心力で純水ＤＩＷを振り切り、乾燥させる。槽４１内に温風の供給があってもよい。被洗浄基板２０は回転を伴うことなく乾燥させることも考えられる。
【００２５】
上記第２実施形態の方法によれば、図３の処理Ｓ３２、図４（ｂ）に示すように、被洗浄基板２０に対し、薬液（Ｒ−ＮＨ２）浸漬から排出後、まず純水ＤＩＷが噴霧状に与えられることにより、薬液と水の反応は微量に終わる。そのうえで純水ＤＩＷによる実質的な洗浄に移行する。これにより、過剰反応することなく不要物以外の金属系の腐食が促進されることはない。
【００２６】
上記各実施形態の方法によれば、アミン系の有機物剥離液（Ｒ−ＮＨ２）と水の反応が所定量に終えられるよう制御され、アルコール処理を省いても過剰反応することなく不要なポリマーのみを除去するように実施可能である。なお、各実施形態で示した枚葉式、バッチ式の洗浄乾燥装置の構成は限定されるものではない。特に、バッチ式は図４のような１バス方式でなく、複数槽を移動する方式でもかまわない。このときも、薬液槽から出した被洗浄基板４０に対し次の槽で所定量の純水ＤＩＷが噴霧状に与えられる。
【００２７】
すなわち、上述の図１、図３各実施形態に示した方法を伴って形成された半導体装置は、アルコール処理を省いても信頼のおけるポリマー除去が実現される。これにより、前記図５（ｂ）で示したような、金属配線の細りなどの問題の起こらない高信頼性で低コストの半導体装置が構成できる。
【００２８】
【発明の効果】
以上説明したように、本発明によれば、アミン系の有機物剥離液（Ｒ−ＮＨ２）と水の反応が所定量に終えられるよう制御され、アルコール処理を省いても信頼のおけるポリマー除去が実現され、設計どおりの金属配線のパターンが実現され高信頼性で低コストの半導体装置が構成できる。この結果、アミン系の有機物剥離液を使用したポリマー除去について、金属系材料の信頼性を維持しつつアルコールを不使用とする半導体装置の製造方法及び半導体装置を提供することができる。
【図面の簡単な説明】
【図１】本発明の第１実施形態に係る半導体装置の製造方法の要部を示す流れ図である。
【図２】（ａ）〜（ｄ）は、枚葉式スピン方式の洗浄乾燥装置を一例として利用し第１実施形態の方法を説明する概略図である。
【図３】本発明の第２実施形態に係る半導体装置の製造方法の要部を示す流れ図である。
【図４】（ａ）〜（ｄ）は、バッチ式の洗浄乾燥装置を一例として利用し第２実施形態の方法を説明する概略図である。
【図５】（ａ），（ｂ）は、層間絶縁膜上の金属配線パターンを示す概観図である。
【符号の説明】
Ｓ１１〜Ｓ１４，Ｓ３１〜Ｓ３４…処理ステップ
２０，４０…被洗浄基板
２１…支持台
２３，２４…ノズル
４１…処理槽
４２…カセット
ＤＩＷ…純水[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device manufacturing method, and more particularly to a semiconductor device manufacturing method for removing unnecessary substances including an organic component and a metal component attached to a semiconductor substrate or another processed product, and a semiconductor device realized by using the method. .
[0002]
[Prior art]
With the miniaturization of LSIs, the width of metal wiring has been reduced, and the influence of slight corrosion occurring in the cleaning process cannot be ignored. For example, a sidewall polymer containing an organic component and a metal component is formed on a pattern sidewall on a semiconductor substrate on which dry etching and ashing have been completed.
[0003]
FIGS. 5A and 5B are schematic views showing metal wiring patterns on an interlayer insulating film. A metal wiring pattern 53 formed through a photolithography technique and a dry etching technique is formed on an interlayer insulating film 52 of a semiconductor substrate 51. When the resist pattern (dashed line) is removed by ashing, a side wall polymer 54 containing an organic component and a metal component is formed on the side wall of the wiring pattern 53 as shown in FIG. In order to remove the side wall polymer 54, a treatment with an amine-based organic stripper is involved as a cleaning step.
[0004]
The order of the above cleaning steps is as follows. The order is immersion in an amine-based organic stripper → alcohol treatment → water washing → drying. Among the above, the alcohol treatment plays a role of immersing the substrate immersed in the stripping solution in an alcohol solution such as IPA (isopropyl alcohol) or ethanol to replace the organic amine. This is because the amine-based organic stripping solution becomes alkaline when mixed with water, and if the effect is excessive, there is a risk that the metal wiring portion will be significantly corroded. In FIG. 5B, a broken line shows a state in which the above-described corrosion has occurred in the wiring pattern 53 and the wiring pattern 53 is unexpectedly thinned.
[0005]
[Problems to be solved by the invention]
According to the above method, alcohol treatment is always performed after the substrate immersion treatment with the amine-based organic stripping solution so as not to lower the reliability of the metal-based wiring. However, there is a concern that running costs increase due to the alcohol treatment.
[0006]
The present invention has been made in view of the above-described circumstances, and has been made on a semiconductor device that does not use alcohol while maintaining the reliability of a metal-based material for polymer removal using an amine-based organic stripper. An object is to provide a manufacturing method and a semiconductor device.
[0007]
[Means for Solving the Problems]
The method for manufacturing a semiconductor device according to claim 1 of the present invention includes:
A step of applying a chemical solution containing an active species that peels off the unnecessary material to the substrate to which the unnecessary material containing at least the organic component and the metal component is attached,
A step of shaking off the chemical solution by centrifugal force to rotate the substrate,
A step of supplying and cleaning pure water while rotating the substrate,
A step of shaking off and drying the pure water with centrifugal force to rotate the substrate,
It is characterized by having.
[0008]
According to the method of manufacturing a semiconductor device according to the present invention, the chemical solution is once shaken off and reduced to a very small amount, and then the cleaning is performed with pure water. As a result, corrosion of metallic materials other than unnecessary materials is not promoted without excessive reaction.
[0009]
A method of manufacturing a semiconductor device according to [claim 2] of the present invention is dependent on [claim 1],
The number of rotations for rotating the substrate is controlled alternately between low speed and high speed. Thereby, the cleaning power is improved.
[0010]
The method for manufacturing a semiconductor device according to claim 3 of the present invention includes:
A step of applying a chemical solution containing an active species that peels off the unnecessary material to the substrate to which the unnecessary material containing at least the organic component and the metal component is attached,
Applying a predetermined amount of pure water to the substrate in a spray form,
Supplying pure water to the substrate and washing;
A step of shaking off and drying the pure water with centrifugal force to rotate the substrate,
It is characterized by having.
[0011]
According to the method of manufacturing a semiconductor device according to the present invention, after the chemical solution is applied, pure water is not supplied in a large amount but in the form of a spray, so that the reaction between the chemical solution and water ends in a very small amount. Then, the process shifts to a substantial cleaning with pure water. As a result, corrosion of metallic materials other than unnecessary materials is not promoted without excessive reaction.
[0012]
A method for manufacturing a semiconductor device according to [Claim 4] of the present invention is dependent on [Claim 3],
The step of drying the substrate is characterized in that pure water is shaken off by centrifugal force with rotation of the substrate.
[0013]
A semiconductor device according to a fifth aspect of the present invention is characterized by being formed by using the method for manufacturing a semiconductor device according to any one of the first to fourth aspects. Provision of a semiconductor device at a lower cost, which ensures reliability, is realized.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a flowchart showing a main part of a method for manufacturing a semiconductor device according to the first embodiment of the present invention. FIGS. 2A to 2D are schematic diagrams illustrating a method of the first embodiment using a single-wafer spin-type cleaning / drying apparatus as an example. For example, an unnecessary material containing an organic component and a metal component and a sidewall polymer are formed on the pattern sidewall on the semiconductor substrate after the dry etching and the ashing process are completed (see 54 in FIG. 5). In this embodiment, the following is performed to remove the side wall polymer.
[0015]
First, as shown in the process S11 in FIG. 1 and FIG. 2A, an amine-based organic stripping solution (R-NH 2 ) is applied on the substrate 20 to be cleaned on which the side wall polymer is formed. Here, as shown in FIG. 2A, the substrate to be cleaned 20 held on the support 21 in the processing chamber is rotated at a low speed (around 100 rpm), and a predetermined amount of the chemical (R-NH 2 ) is supplied from the nozzle 23. Spin coating.
[0016]
After the elapse of the predetermined order, the substrate to be cleaned 20 is rotated at a high speed, and the chemical solution (R-NH 2 ) is shaken off by the centrifugal force as shown in the process S12 of FIG. 1 and FIG. 2B. As shown in FIG. 2B, when the substrate 20 to be cleaned is rotated at a high speed (finally at 4000 rpm or more), a small amount of a chemical solution and a reactant remain on the substrate.
[0017]
Next, as shown in a process S13 in FIG. 1 and FIG. 2C, pure water DIW is supplied to the substrate 20 to be cleaned after the chemical solution has been shaken off. Here, as shown in FIG. 2C, the substrate to be cleaned 20 is alternately controlled to rotate at a relatively low speed (around 1000 rpm) and a high speed (around 4000 rpm) while supplying a predetermined amount of pure water DIW from the nozzle 24. Wash with pure water.
[0018]
Next, as shown in the processing S14 of FIG. 1 and FIG. 2D, the substrate 20 to be cleaned is rotated at a high speed (4000 rpm or more), so that the pure water DIW is shaken off by centrifugal force and dried.
[0019]
According to the method of the first embodiment, as shown in the process S12 of FIG. 1 and the chemical solution (R—NH 2 ), as shown in FIG. Transition. This prevents the substrate 20 from being over-reacted and from promoting metal-based corrosion such as necessary wiring other than unnecessary polymers. As a result, highly reliable polymer removal can be realized even if the alcohol treatment is omitted. In addition, uniformity of polymer exfoliation to be removed by once shaking off the chemical solution can be obtained.
[0020]
FIG. 3 is a flowchart showing a main part of a method for manufacturing a semiconductor device according to the second embodiment of the present invention. FIGS. 4A to 4D are schematic views illustrating a method of the second embodiment using a batch-type washing / drying apparatus as an example. For example, an unnecessary material containing an organic component and a metal component and a sidewall polymer are formed on the pattern sidewall on the semiconductor substrate after the dry etching and the ashing process are completed (see 54 in FIG. 5). In this embodiment, the following is performed to remove the side wall polymer.
[0021]
First, as shown in the process S31 of FIG. 3 and FIG. 4A, the substrate 40 to be cleaned on which the side wall polymer is formed is immersed in an amine-based organic stripping solution (R-NH 2 ). Thereby, the chemical solution is applied to the substrate 40 to be cleaned. Here, as shown in FIG. 4A, a plurality of substrates to be cleaned 40 stored in a dedicated cassette 42 are taken into a processing tank 41 and filled with a chemical solution (R-NH 2 ).
[0022]
After the elapse of the predetermined time, the chemical solution (R-NH 2 ) in the processing tank 41 is discharged out of the tank 41 as shown in the processing S32 of FIG. 3 and FIG. A predetermined amount of pure water DIW is applied to the substrate 40 in the form of a spray (for example, the time is controlled). At this time, it is desirable that the substrate be rotated at a low speed. By this spray supply, uniform reaction of a small amount of the chemical solution and water with respect to the plurality of substrates 40 is achieved.
[0023]
After a lapse of a predetermined time, pure water DIW is supplied to the substrate 40 to be cleaned for the substantial washing purpose, as shown in the process S33 of FIG. 3 and FIG. 4C. Here, as shown in FIG. 4C, the tank 41 is filled with pure water DIW. The substrate to be cleaned 40 may be subjected to a water washing process while rotating at a low speed.
[0024]
Next, as shown in processing S34 of FIG. 3 and FIG. 4D, the cleaning liquid in the tank 41 is discharged, and the substrate 20 to be cleaned is rotated at a high speed, whereby the pure water DIW is shaken off by centrifugal force and dried. . Warm air may be supplied in the tank 41. The substrate to be cleaned 20 may be dried without rotation.
[0025]
According to the method of the second embodiment, as shown in step S32 of FIG. 3 and FIG. 4B, after the substrate to be cleaned 20 is discharged from the immersion in the chemical solution (R—NH 2 ), first, pure water DIW is discharged. Is supplied in the form of a spray, the reaction between the chemical solution and water ends in a very small amount. Then, the process shifts to substantial cleaning with pure water DIW. As a result, corrosion of metallic materials other than unnecessary materials is not promoted without excessive reaction.
[0026]
According to the method of each of the above embodiments, the reaction is controlled so that the reaction between the amine-based organic substance stripping solution (R-NH 2 ) and water is completed to a predetermined amount, and the unnecessary polymer is not excessively reacted without the alcohol treatment. It can be implemented to remove only The configuration of the single-wafer type and batch type washing / drying apparatus described in each embodiment is not limited. In particular, the batch system is not limited to the one-bus system as shown in FIG. Also at this time, a predetermined amount of pure water DIW is sprayed on the substrate to be cleaned 40 discharged from the chemical solution tank in the next tank.
[0027]
That is, in the semiconductor device formed by the method shown in each of the above-described embodiments of FIGS. 1 and 3, reliable polymer removal can be realized even if alcohol treatment is omitted. As a result, a highly reliable and low-cost semiconductor device which does not cause a problem such as thinning of the metal wiring as shown in FIG. 5B can be constructed.
[0028]
【The invention's effect】
As described above, according to the present invention, the reaction is controlled so that the reaction between the amine-based organic stripper (R-NH 2 ) and water is completed to a predetermined amount, so that reliable polymer removal can be achieved even if the alcohol treatment is omitted. As a result, a metal wiring pattern as designed is realized, and a highly reliable and low-cost semiconductor device can be configured. As a result, it is possible to provide a method of manufacturing a semiconductor device and a semiconductor device that does not use alcohol while maintaining the reliability of a metal-based material for polymer removal using an amine-based organic stripper.
[Brief description of the drawings]
FIG. 1 is a flowchart showing a main part of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.
FIGS. 2A to 2D are schematic diagrams illustrating a method of a first embodiment using a single-wafer spin-type cleaning / drying apparatus as an example.
FIG. 3 is a flowchart showing a main part of a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
FIGS. 4A to 4D are schematic views illustrating a method of a second embodiment using a batch-type washing / drying apparatus as an example.
FIGS. 5A and 5B are schematic views showing a metal wiring pattern on an interlayer insulating film. FIGS.
[Explanation of symbols]
S11 to S14, S31 to S34 Processing steps 20 and 40 Substrate to be cleaned 21 Supports 23 and 24 Nozzle 41 Processing tank 42 Cassette DIW Pure water

Claims (5)

少なくとも有機成分及び金属成分の含有する不要物が付着した基板に対し、前記不要物を剥離する活性種の入った薬液を塗布する工程と、
前記基板を回転させる遠心力で前記薬液を振り切る工程と、
前記基板を回転させつつ純水を供給し洗浄する工程と、
前記基板を回転させる遠心力で前記純水を振り切り乾燥させる工程と、
を具備したことを特徴とする半導体装置の製造方法。A step of applying a chemical solution containing an active species that peels off the unnecessary material to the substrate to which the unnecessary material containing at least the organic component and the metal component is attached,
A step of shaking off the chemical solution by centrifugal force to rotate the substrate,
A step of supplying and cleaning pure water while rotating the substrate,
A step of shaking off and drying the pure water with centrifugal force to rotate the substrate,
A method for manufacturing a semiconductor device, comprising: 前記基板を回転させる回転数は低速、高速を交互に制御することを特徴とする請求項１記載の半導体装置の製造方法。2. The method according to claim 1, wherein the number of rotations for rotating the substrate is controlled alternately between a low speed and a high speed. 少なくとも有機成分及び金属成分の含有する不要物が付着した基板に対し、前記不要物を剥離する活性種の入った薬液を塗布する工程と、
前記基板に所定量の純水を噴霧状に与える工程と、
前記基板に純水を供給し洗浄する工程と、
前記基板を乾燥させる工程と、
を具備したことを特徴とする半導体装置の製造方法。A step of applying a chemical solution containing an active species that peels off the unnecessary material to the substrate to which the unnecessary material containing at least the organic component and the metal component is attached,
Applying a predetermined amount of pure water to the substrate in a spray form,
Supplying pure water to the substrate and washing;
Drying the substrate,
A method for manufacturing a semiconductor device, comprising: 前記基板を乾燥させる工程は基板の回転を伴い遠心力で純水を振り切ることを特徴とする請求項３記載の半導体装置の製造方法。4. The method according to claim 3, wherein in the step of drying the substrate, pure water is shaken off by centrifugal force with rotation of the substrate. 前記［請求項１］〜［請求項４］のいずれかの半導体装置の製造方法を用いて形成されることを特徴とする半導体装置。A semiconductor device formed by using the method of manufacturing a semiconductor device according to any one of [1] to [4].
JP2002251295A 2002-08-29 2002-08-29 Semiconductor device and method of manufacturing the same Withdrawn JP2004095642A (en)

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