JPH0845784A - Manufacture of compound electronic component - Google Patents

Abstract

PURPOSE:To form a capacitor and a resistor in constitution members using the same material, by forming a semiconductor layer wherein at least a part of an inner electrode is connected with at least one side of an outer electrode, and compounding a resistor and a capacitor of the semiconductor layer. CONSTITUTION:Connection parts between inner electrodes 1, 1... and an outer electrode 4, and connection parts between inner electrodes 2, 2... and an outer electrode 5 are formed by using semiconductor layers 6 and 7, respectively. A series connection element constituted of a resistor and a capacitor is formed. The resistor consists of the semiconductor layers 6, 7. The capacitor consists of the outer electrodes 4, 5, the inner electrodes 1, 1..., 2, 2..., and dielectric layers 3, 3.... Thereby the capacitor and the resistor are compounded in the constitution members using the same material. A compound electronic component having a compound element composed of a resistor and a capacitor in which mechanical defect like cracks is not generated can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite electronic component having a resistor / capacitor composite element in which a semiconductor layer formed on a ceramic body is combined with a capacitor as a resistor, and a manufacturing method thereof.

[0002]

2. Description of the Related Art A combination circuit of a resistor and a capacitor is a parallel circuit of a capacitor and a resistor such as a speed-up capacitor for switching a digital circuit or a signal bypass capacitor for an analog circuit, a surge absorber for a diode, an acoustic circuit, etc. It is widely used in series circuits of resistors and capacitors, and others. To combine these resistor element and capacitor element as one electronic component, different materials such as dielectric material and resistor material are laminated and fired at the same time, or either one of them is fired and then fired. By thickly printing a layer made of the other material or forming a film by sputtering or the like, both elements are combined.

[0003]

However, since compounding by these methods uses different materials of a resistor material and a dielectric material, when the former different materials are laminated and fired at the same time, At the time of firing, or when forming a film on the latter fired body, mutual diffusion of constituent atoms of the material occurs at the time of baking the film, changing the dielectric constant of the dielectric,
There is a problem that not only the resistance value of the resistor body is changed, but also the molded body causes cracks due to the difference in thermal expansion coefficient of each material. Not only that, but in the case of a multilayer capacitor having external electrodes connected to the internal electrodes on both end surfaces of a multilayer ceramic body in which ceramic dielectric layers and internal electrodes are alternately laminated, the external electrodes are formed. When doing so, it is also practiced to first form a resistor film that connects to the internal electrodes and then form an external electrode film on it, but the combined thickness of the resistor film and external electrode film becomes too thick. As a result, a compact chip component cannot be obtained, and it is not suitable as a high-density mounting component for a printed circuit board. However, there is a problem that it is difficult to select and adjust the material. A first object of the present invention is to provide a resistor / capacitor element in which a capacitor and a resistor are compounded in a structure using the same material, and to provide a composite electronic component using this element and a manufacturing method thereof. is there. The second object of the present invention is to
It is an object of the present invention to provide a composite electronic component having a resistor / capacitor element having stable capacitance and resistance of a capacitor, and a method for manufacturing the same. A third object of the present invention is to provide a composite electronic component having a resistor / capacitor element in which mechanical defects such as cracks are hard to occur, and a method for manufacturing the same. A fourth object of the present invention is to provide a composite electronic component having a compact resistor / capacitor element and a method of manufacturing the same, in which the film thickness of the external electrode is not too thick. A fifth object of the present invention is to provide a composite electronic component having a resistor / capacitor element capable of reducing the mounting area for a printed circuit board and the like, and a method for manufacturing the same.
A sixth object of the present invention is to provide a composite electronic component having a resistor / capacitor element and a method of manufacturing the same, which can be used as it is in the current manufacturing equipment or the like, which is the same as the current multilayer capacitor but only partially changed. To provide. A seventh object of the present invention is to provide a method of manufacturing a composite electronic component having a resistor / capacitor element whose resistance value and electrostatic capacity can be easily selected. An eighth object of the present invention is to provide a method for manufacturing a composite electronic component having a resistor / capacitor element, which can simplify the manufacturing process.

In order to solve the above problems, the present invention provides
(1) At least one of the external electrodes in a ceramic capacitor in which dielectric layers and internal electrodes are alternately stacked, and external electrodes connected to one and the other of the internal electrodes are provided on both end surfaces of the multilayer body. There is provided a composite electronic component having a resistor / capacitor composite element in which a semiconductor layer to which at least a part of the internal electrode is connected is formed on the side of, and the resistor and the capacitor of the semiconductor layer are composited. Further, in the present invention, in the resistor / capacitor composite element, the connecting portion between the external electrode and the internal electrode on the side where the semiconductor layer is formed is a semiconductor layer, and the semiconductor layer is provided on one of the external electrode side and the internal electrode. The composite electronic component of (1), which is an element in which a resistor of a semiconductor layer and a capacitor are connected in series, and (3) a resistor / capacitor composite element is an external electrode on the side where the semiconductor layer is formed and an internal portion. The composite electronic component according to (1) above, in which the electrode connection portion is a direct connection between the two and the semiconductor layer is connected to an adjacent internal electrode, and the resistor and the capacitor of the semiconductor layer are connected in parallel. (4) A ceramic dielectric layer and internal electrodes are alternately laminated, and external electrodes connected to one and the other of the internal electrodes are provided on both end surfaces of the ceramic element body, and at least one of the external electrodes is provided. Above on the side A method of manufacturing a composite electronic component, comprising a resistor / capacitor composite element in which a semiconductor layer to which at least a part of a partial electrode is connected is formed, and the semiconductor layer is used as a resistor to form a composite with a capacitor. The step of applying the external electrode material paste to the element body, the step of carbonizing and leaving the binder by heating the coating film in a non-oxidizing gas atmosphere, and the above-mentioned char Forming by including a step of reducing the dielectric of the surface layer part of the ceramic body to a semiconductor, or applying the external electrode material paste containing a reducing agent to the ceramic body, and baking the coating film. A composite electronic component formed by including a step of reducing the dielectric of the surface layer portion of the ceramic body with the reducing agent to form a semiconductor. There is provided a manufacturing method.

In the present invention, the composite electronic component means a resistor / capacitor composite element in which a semiconductor layer is formed on a capacitor having at least one structural unit in which an internal electrode and a dielectric layer are laminated, and the capacitor and the resistor are combined. A composite electronic component in which a resistor / capacitor composite element itself may be used as a composite electronic component, but a single or a plurality of elements such as other capacitors, inductors, resistors, and multilayer wiring boards are combined with this. It can be a part. In the resistor / capacitor composite element, as shown in FIG. 1, the internal electrodes 1, 1 ... On one side and the internal electrodes 2, 2 ... On the other side are dielectric layers 3, 3 ... , And dielectric layers 3 and 3 are laminated on both upper and lower sides, and external electrodes 4 and internal electrodes 2 connected to the internal electrodes 1, 1 ... On both end faces of the laminated body. In the multilayer capacitor having the external electrodes 5 connected to 2, ..., The connection portions of the internal electrodes 1, 1 ... And the external electrodes 4, and the internal electrodes 2, 2 ... And the external electrodes 5 are respectively formed by the semiconductor layers 6 and 7. Configure and
As shown in FIG. 2, the resistor R1 including the semiconductor layers 6 and 7
And the external electrodes 4, 5 and the internal electrodes 1, 1, ..., 2, 2.
And a capacitor C1 formed by the dielectric layers 3, 3 ...
An element shown by an RC series equivalent circuit consisting of Further, as shown in FIG. 3, in the structure shown in FIG. 1, the inner electrodes 1, 1 ... And the outer electrodes 4, the inner electrodes 2, 2 ,. Directly connected by the external electrode 4,
5, the semiconductor layers 8 and 9 connected to the internal electrodes 2, 2 ... And the internal electrodes 1, 1 ... Are formed, and as shown in FIG. 4, the resistor R2 including the semiconductor layers 8 and 9 is formed.
And the external electrodes 4, 5 and the internal electrodes 1, 1, ..., 2, 2.
And a capacitor formed by the dielectric layers 3, 3 ...
An element shown by an RC parallel equivalent circuit of 2. 1 and 3 can be used together to form a circuit in which FIGS. 2 and 4 are connected by, for example, series connection.

In order to manufacture a resistor / capacitor composite element using a so-called laminated ceramink capacitor shown by the above RC series equivalent circuit, first, a barium titanate or the like is manufactured as in the case of manufacturing a usual laminated ceramic capacitor. Forming a ceramic dielectric green sheet using the composition for a ceramic green sheet containing a dielectric material and a binder, and containing a conductive powder such as nickel in each of the plurality of ceramic dielectric green sheets A step of forming a conductor portion using the internal electrode material paste, a step of laminating a ceramic dielectric green sheet on which the conductor portion is formed, a step of crimping the laminated body, and an oxidation of the crimped laminated body. Or, firing in a neutral or reducing atmosphere with or without calcination in a non-oxidizing atmosphere In a manufacturing method including a step of forming a monolithic ceramic body and an external electrode forming step of forming an external electrode connected to an internal electrode formed by firing the conductor part, the internal electrode is a ceramic dielectric. The external electrodes are formed after forming the laminated ceramic body that is buried in the body of the fired body of the green sheet. In this external electrode forming step, a step of applying the external electrode material paste to both end surfaces of the laminated ceramic body where the respective ends of the internal electrodes face each other, and a laminated ceramic having the applied external electrode material paste coating film The element body is calcinated in a non-oxidizing atmosphere to carbonize the binder,
A step of allowing a carbide such as carbon to remain in the coating film; and baking the external electrode material paste coating film on the laminated ceramic body to cause the carbide to act as a reducing agent so that the dielectric near the end face of the laminated ceramic body. Of the internal electrode of the multilayer ceramic body by applying a reduction step to reduce the semiconductor to a semiconductor and preferably vaporize an oxide of a carbide as a gas, or an external electrode material paste containing a reducing agent. Are applied to both end surfaces facing each other, and the external electrode material paste coating film is baked on the laminated ceramic element body to reduce the dielectric near the end surface of the laminated ceramic element body with the reducing agent. Has a baking step for converting the semiconductor into a semiconductor Even when a reducing agent is used, the multilayer ceramic body having the external electrode material paste coating film is pre-baked in a non-oxidizing atmosphere to carbonize the binder in the step before baking the external electrode material paste coating film. However, a step of leaving a carbide such as carbon in the coating film may be added. On the contrary, a step of temporarily firing in an oxidizing atmosphere so as to prevent the carbide of the binder from remaining and providing a step for removing by-heat is provided. Is also good.

Further, in order to manufacture a resistor capacitor composite element using a so-called laminated ceramic capacitor, which is shown by the above RC parallel equivalent circuit, a dielectric material such as barium titanate and a binder are manufactured in the same manner as above. A step of forming a ceramic dielectric green sheet using the composition for a ceramic green sheet containing, and using an internal electrode material paste containing a conductive powder such as nickel in each of the plurality of ceramic dielectric green sheets The step of forming the conductor portion, the step of laminating the ceramic dielectric green sheets having the conductor portion formed thereon, the step of crimping the laminated body, and the step of adhering the crimped laminated body in an oxidizing or non-oxidizing atmosphere. Form a monolithic ceramic body by firing in a neutral or reducing atmosphere with or without calcination And a manufacturing method having an external electrode forming step of forming an external electrode connected to the internal electrode formed by firing the conductor part, the laminated structure in which the internal electrodes are alternately led out on both end faces. After forming the ceramic body, external electrodes are formed by the same method as the external electrode forming step. A combination of the structures of FIGS. 1 and 3 can also be manufactured according to the above.

In the above description, the semiconductor layer is formed in the vicinity of both end faces of the monolithic ceramic element body, but it may be formed on one of them. In that case, on the side where the semiconductor layer is not formed, a material that does not easily carbonize is used as the binder of the external electrode material paste, the amount thereof is reduced, or a material that easily decomposes at low temperature is used. Moreover, you may distinguish by the thing using a reducing agent and the thing not using it.

In the above, as the non-oxidizing atmosphere, nitrogen gas and other inert gases can be mentioned. However, in order to prevent the amount of the remaining carbides from becoming too large, the atmosphere should contain oxygen. Part of the binder may be removed by oxidation. Further, the temperature and time of calcination when carbonizing the binder are preferably conditions under which the binder carbonizes in a non-oxidizing atmosphere and the carbide can remain, for example, depending on the kind of the binder, for example, FIG. Profile shown in, and 300 ℃ ~ 350 ℃
Can be 10 minutes to 30 minutes. This type of baking of the coating film for the external electrode material is performed at a temperature equal to or higher than the calcination temperature. The temperature depends on the melting point of the metal used for the external electrode material.
700 ° C for g, 750 ° C for Ag-Pd, 7 for Ni
The temperature is, for example, 50 to 800 ° C. and Cu is 750 to 800 ° C., but not limited thereto. The higher the baking temperature, the wider the region of the semiconductor layer to be formed. During this baking, the carbide acts as a reducing agent and is itself oxidized by the reducing reaction, but it is preferable that it is removed as a carbon dioxide as a gas in order to form a semiconductor and in terms of the performance of the external electrode. The term "carbide" refers not only to carbon but also to carbon in the carbonization process of the binder, but is mainly reducing.

As the external electrode material paste, one obtained by adding a binder and a glass frit to each of the above metals is used. The binder has at least a resin component, and further comprises a solvent and an additive as required, and as the resin component, a polyacetal resin such as polyvinyl butyral resin, a polyethylene terephthalate resin, a cellulose derivative such as ethyl cellulose, an acrylic resin. , Non-curable resin such as polyvinyl alcohol,
Thermosetting resins such as epoxies and acrylics, which are preferably used in combination with peroxides, and further ultraviolet curable resins, electron curable resins and other resins can be mentioned. The latter two examples include epoxy acrylate, polybutadiene acrylate, When used as an ultraviolet-curable resin, such as acrylic acid such as urethane acrylate, methacrylic acid modified product, unsaturated polyester, and the like, benzoin, acetophenone, benzoin butyl ether and the like can be used. As the solvent, terpineol (terpineol), tetralin, butyl carbitol, carbitol acetate, etc. may be used alone or in combination. Examples of the glass frit include lead borosilicate glass, lead borate glass, zinc borosilicate glass, borosilicate alkali oxide glass, and the like, and borosilicate alkali oxide glass is used in combination with copper and nickel in terms of wettability. preferable. As the component ratio of the external electrode material paste, metal powder 70 to 80% by weight, glass frit 2 to 3
% By weight and 17 to 28% by weight of binder are preferred. The larger the amount of resin, the larger the amount of carbide remaining during the pre-baking, so that the region of the semiconductor layer formed during baking expands.

When the external electrode material paste contains a reducing agent, the reducing agent includes Li ₂ CO ₃ and CaCO.
Examples of the reducing agent include carbonic acid compounds such as _3; boron compounds including B and Ni such as NiB; compounds including B and Si; and compounds including P and Li. This reducing agent is a binder,
Carbides of organic materials such as resins may be used. When a reducing agent is used, it may be preferable to use an acrylic resin having good debye (removal of binder) property. The amount of the reducing agent in the external electrode material paste is, for example, several percent or less.

[0012]

In the calcination process, the bander in the coating film of the external electrode material paste is carbonized, and the carbide acts as a reducing agent during baking, reducing the dielectric near the end face of the ceramic body and converting it into a semiconductor. In this way, a semiconductor portion can be formed in one dielectric layer as two regions of a resistor and a capacitor, and a composite element having both elements can be formed. This is
It is also possible to include a reducing agent in the external electrode material paste and reduce the dielectric in the vicinity of the end face of the ceramic body to make it a semiconductor when the coating film is baked.

[0013]

EXAMPLES Examples of the present invention will be described below. Example 1 A blend obtained by weighing the following components was placed in a 1-liter polyethylene pot and wet mixed by a ball mill method at 60 rpm for 15 hours to obtain a slurry. Ceramic powder (barium titanate) 88.65 parts by weight Binder resin (polyvinyl butyral resin) 9.85 parts by weight (glass transition point 65 ° C.) Di-n-butylphthalate (Dn-BP) 1.50 parts by weight Ethanol 100 parts by weight Part Toluene 100 parts by weight

PET obtained by defoaming the obtained slurry and then treating it with a silicone type release agent having a size of 100 × 100 mm
100μ gap on the carrier film made of film
It was applied with a doctor blade of m to a size of 50 × 50 mm, dried, and peeled to obtain a ceramic dielectric green sheet having a thickness of about 30 μm.

An internal electrode material paste made of palladium, ethyl cellulose, terpineol, etc. was applied by screen printing to one surface of the ceramic dielectric green sheet thus produced, and dried at 120 ° C. for 2 minutes. A predetermined number of ceramic dielectric green sheets printed with such an internal electrode material film are prepared and laminated back and forth, and ceramic dielectric green sheets without an internal electrode material coating film are further laminated on both sides of the ceramic dielectric green sheets. Crimping (8
150 Kgf / cm ² ) at 0 ° C. to prepare an unsintered pressure-bonded product.

Next, since the above-mentioned pressure-bonded unsintered laminate is manufactured so as to include a large number of capacitor units, it is cut into individual chips to form chips. These chips were heated at 500 ° C. by a usual method to remove the binder, and further fired at 1300 ° C. to obtain a monolithic ceramic capacitor body. This monolithic ceramic capacitor element body is finally manufactured to be a 3.2 mm × 1.6 mm shaped monolithic ceramic capacitor for 4.7 μF. As shown in FIG. 3, the monolithic ceramic capacitor element body thus formed has internal electrodes 1, 1
.. and the internal electrodes 2, 2 ... Are led out to both end faces of the monolithic ceramic capacitor body. Apply the following external electrode material paste on both end surfaces to a dry film thickness of 25μ.
It is applied by a dipping (dipping) method so that the thickness becomes m. Copper powder 70% by weight Glass frit (lead borosilicate glass) 3% by weight Ethylcellulose 2% by weight Terpineol (solvent) 25% by weight This external electrode material paste is prepared by thoroughly mixing copper powder and glass frit in a mortar and then adding ethylcellulose. The resin solution dissolved in terpineol was added in an amount of 20% by weight based on the solid content of the former, well stirred again in a mortar, further kneaded with a three-roll mill, and pasted. The viscosity was measured with a rotating disk type viscometer.

Next, in a nitrogen atmosphere, the profile shown in FIG. 5, that is, the temperature was raised from room temperature to 750 ° C. at 30 ° C./min, held at 750 ° C. for 10 minutes, and further 30 ° C./min.
Pre-baking and baking are performed by a method of cooling to room temperature at ℃. By doing this, de-biogenesis (removal of binder) becomes insufficient at 400 ° C or lower, and the binder carbonizes,
Carbides remain in the external electrode material film. When the temperature reaches 600 ° C., the remaining carbides are combined with oxygen, such as barium titanate, of the dielectric in the vicinity of the end face of the monolithic ceramic capacitor body, and a reduction reaction of the dielectric occurs, so that the dielectric becomes a semiconductor. In this manner, 150 μm can be made into a semiconductor from the end face of the monolithic ceramic capacitor body to the inside, and the resistor / capacitor composite element shown in FIG. 3 having this semiconductor layer as a resistor can be manufactured. After this, the external electrodes 4 and 5 in FIG. 3 may be nickel-plated and then solder-plated. When the frequency characteristics of the absolute value of the resistance value R and the impedance Z of this resistor / capacitor composite element were measured (Y
Using HP-4149A, 100Hz-40MHz,
(Measured at 1 volt), the measurement results shown in FIG. 6 were obtained. From this, in FIG. 4, R2 is 3.3 KΩ and C2 is 4.7 μ.
It can be seen that an RC parallel circuit of F is formed.

Example 2 The internal electrodes 1, 1, ... And 2, 2 ... In FIG. 3 are buried in a monolithic ceramic capacitor element body, and the end portions of the respective internal electrodes are opposed to the monolithic ceramic capacitor element. Example 1 except that the distance from the end face of the body was 150 μm
The resistor / capacitor composite element shown in FIG. 1 was formed in the same manner as above, and the same measurement as in Example 1 was carried out. In FIG. 2, R1 was 30 KΩ and C1 was 4.7 μF.
It was found that the RC series was formed.

In the same manner as in Example 1, the monolithic ceramic capacitor element body shown in FIG. 3 is formed, and then an external electrode material paste having the following composition is prepared and applied. Copper powder 70% by weight Glass frit (lead borosilicate glass) 2.7% by weight Acrylic resin 2% by weight Terpineol (solvent) 25% by weight Reducing agent (Li ₂ CO ₃ ) 0.3% by weight Next, in a nitrogen atmosphere, The temperature is raised from room temperature to 350 ° C. at 30 ° C./min.
Temporary firing and baking are performed by a method of raising the temperature to 50 ° C., maintaining the temperature for 10 minutes, and further cooling to normal temperature at 30 ° C. per minute. By doing so, the acrylic resin is sufficiently debyeed by holding at 350 ° C. for 10 minutes, and the carbide of the resin component does not remain. 600 ° C thereafter
Then, the reducing agent acts, and a reduction reaction of the dielectric such as barium titanate occurs near the end face of the monolithic ceramic capacitor element body, so that the dielectric material becomes a semiconductor and the resistor / capacitor composite having the same structure as that of the first embodiment is formed. The device is obtained. In this case, since there is no effect of the carbide of the resin component, it becomes easy to control the reduction reaction, that is, semiconductor formation, depending on the amount of the reducing agent.

[0020]

According to the present invention, since the two regions of the resistor layer and the capacitor layer are formed in the dielectric layer, it is possible to combine the capacitor and the resistor into a structure using the same material. Since the same material is used, there is no mutual diffusion of atoms as in the case of dissimilar materials, the capacitance and resistance value are stable, and a resistor that does not cause mechanical defects such as cracks. A composite electronic component having a capacitor composite element can be provided. Further, since it is not necessary to provide the external electrode via the resistor, the film thickness is not too thick, a compact external electrode can be formed, and the resistor is incorporated in the dielectric layer. It is possible to provide a composite electronic component having a resistor / capacitor composite element capable of reducing the mounting area. In addition, the current structure of the multilayer capacitor is left as it is, the resistor is built into the inside, and the resistance value can be easily changed depending on the degree of semiconductorization.
Since it is possible to manufacture a resistor / capacitor element whose capacitance can be selected according to the number of dielectric layers, it is possible to manufacture parts having RC characteristics that meet the demands of customers with a simple manufacturing method using the current manufacturing equipment. The manufacturing process can be simplified and the cost can be reduced as compared with the case where the resistor is newly formed.

[Brief description of drawings]

FIG. 1 is a cross-sectional view for explaining an outline of a resistor / capacitor composite element as a composite electronic component according to an embodiment of the present invention.

FIG. 2 is an equivalent circuit diagram thereof.

FIG. 3 is a cross-sectional view for explaining an outline of an anti-antibody / capacitor composite element as a composite electronic component of another embodiment of the present invention.

FIG. 4 is an equivalent circuit diagram thereof.

FIG. 5 is a profile for performing pre-baking and baking in the example of the manufacturing method of the present invention.

FIG. 6 is a diagram showing frequency characteristics of the resistor / capacitor composite element of Example 1 of the present invention.

[Explanation of symbols]

 1, 2 Internal electrode 3 Dielectric layer 4, 5 External electrode 6, 7, 8, 9 Semiconductor layer

Claims (4)

[Claims] 1. A ceramic capacitor in which dielectric layers and internal electrodes are alternately laminated, and external electrodes connected to one and the other of the internal electrodes are provided on both end faces of the laminated body. A semiconductor layer to which at least a part of the internal electrode is connected is formed on at least one side,
A resistor which is a combination of a resistor of the semiconductor layer and a capacitor.
A composite electronic component having a capacitor composite element. 2. The resistor / capacitor composite element has a semiconductor layer at a connecting portion between an external electrode and an internal electrode on which a semiconductor layer is formed, and the semiconductor layer is connected to the external electrode side and one of the internal electrodes. The composite electronic component according to claim 1, which is an element in which a resistor of a semiconductor layer and a capacitor are connected in series. 3. The resistor / capacitor composite element has a semiconductor layer formed on the side where the external electrode and the internal electrode are connected directly to each other, and the semiconductor layer is connected to an adjacent internal electrode. The composite electronic component according to claim 1, which is an element in which a layer resistor and a capacitor are connected in parallel. 4. A ceramic dielectric layer and internal electrodes are alternately laminated, and external electrodes connected to one and the other of the internal electrodes are provided on both end surfaces of the ceramic body.
A method of manufacturing a composite electronic component having a resistor / capacitor composite element in which a semiconductor layer to which at least a part of the internal electrode is connected is formed on at least one side of the external electrode, and the semiconductor layer is used as a resistor in combination with a capacitor. In the semiconductor layer, a step of applying an external electrode material paste to the ceramic body, a step of carbonizing the binder by heating the coating film in a non-oxidizing gas atmosphere to remain, and a baking step It is formed by having a step of reducing the dielectric of the surface layer part of the ceramic element body to a semiconductor by the remaining carbide by applying or applying an external electrode material paste containing a reducing agent to the ceramic element body. And a step of baking the coating film to reduce the dielectric in the surface layer of the ceramic element body to a semiconductor by the reducing agent. Method for manufacturing a composite electronic component to be formed by.